Emagtech Wiki - User contributions [en]

EM.Cube Glossary

2024-10-08T20:24:32Z

Asabet: Created page with "<table> <tr> <td> link=Getting_Started_with_EM.Cube link=Building_Geometrical_Constructions_in_CubeCAD image:fdtd-ico.png |..."

<table>
<tr>
<td>[[image:Cube-icon.png | link=Getting_Started_with_EM.Cube]] [[image:cad-ico.png | link=Building_Geometrical_Constructions_in_CubeCAD]] [[image:fdtd-ico.png | link=EM.Tempo]] [[image:prop-ico.png | link=EM.Terrano]] [[image:static-ico.png | link=EM.Ferma]] [[image:planar-ico.png | link=EM.Picasso]] [[image:metal-ico.png | link=EM.Libera]] [[image:po-ico.png | link=EM.Illumina]]</td>
<tr>
</table>
[[Image:Back_icon.png|30px]] '''[[EM.Cube | Back to EM.Cube Main Page]]'''
 

== Action History ==

ICON: None

MENU: '''Edit → Action History...'''

KEYBOARD SHORTCUT: None

FUNCTION: Opens the "Action History" dialog which lists all the actions taken since the start of the current session of the [[EM.Cube]] application

NOTES, SPECIAL CASES OR EXCEPTIONS: You can go back along the sequence of the action history list and select and highlight any action in that list. In that case, all the subsequent actions taken place after the selected action will be undone. This provides a convenient alternative to multiple Undo/Redo operations.

PYTHON COMMAND: None

<table>
<tr>
<td> [[Image:VIEW MAN45.png|thumb|left|480px|EM.Cube's action history dialog.]] </td>
</tr>
</table>

== Arbitrary Work Plane ==

ICON: [[File:Arbitgrid tool tn.png]]

MENU: '''View → Work Plane → Arbitrary Plane'''

KEYBOARD SHORTCUT: {{key | W}}

FUNCTION: Sets up an arbitrary active work plane

TO SET UP AN ARBITRARY WORK PLANE:

#Activate the '''Work Plane Tool''' to enable CubeCAD's "Work Plane Mode".
#The Work Plane dialog opens up at the lower right corner of the screen.
#Use one of the following three methods to establish a new work plane.
#Hover the mouse over any object in the project workspace to highlight one of its faces. Click on the selected face snap point, i.e. the center of a highlighted planar face. A new work plane appears overlaid on the selected face.
#Or while you are moving the mouse in one of the three principal XY, YZ or ZX work planes, click any blank point and drag the mouse. A semi-translucent plane perpendicular to the current principal work plane is drawn and displayed in the project workspace. The normal plane follows the movement of the mouse as you drag it. Once you reach the desired orientation, press the keyboard's' {{key|Enter}} key to finalize the new work plane.
#Or click successively on any three distinct points in the project workspace (including other objects' snap points). A new work plane is established that passes through the three selected points.

In all the three cases above, a translucent plane appears showing the location and orientation of the new work plane. The transverse axes (local X and Y axes) of the new work plane are displayed in red and green colors, respectively. A new "User Coordinate System (UCS)" is established on the new work plane. In the work plane dialog, you can see the world coordinates of the center of the UCS and its rotation angles with respect to the project's world coordinate system (WCS). From this dialog, you can change both the center coordinates and the rotation angles of the new work plane. Note that the visible size of the work plane is purely for visualization purposes; otherwise, the work plane has infinite extents. You can also change the '''Color''' and '''Transparency''' level of the work plane.

PYTHON COMMAND: None

<table>
<tr>
<td> [[Image:VIEW MAN8.png|thumb|left|480px|EM.Cube's arbitrary work plane dialog.]] </td>
</tr>
</table>

<table>
<tr>
<td> [[Image:VIEW MAN9A.png|thumb|left|640px|An arbitrary work plane and its local X (red) and Y (green) axes.]] </td>
</tr>
<tr>
<td> [[Image:VIEW MAN9.png|thumb|left|640px|Drawing a box object on the arbitrary work plane.]] </td>
</tr>
</table>

== Back View ==

ICON: [[File:view-back_tn.png]]

MENU: '''View → Set View → Back View'''

KEYBOARD SHORTCUT: None

FUNCTION: Projects the physical structure onto the ZX-plane from the back

PYTHON COMMAND: None

<table>
<tr>
<td> [[Image:back_view.png|thumb|500px|EM.Cube's back view of project workspace.]] </td>
</tr>
</table>

== Bottom View ==

ICON: [[File:view-bottom_tn.png]]

MENU: '''View → Set View → Bottom View'''

KEYBOARD SHORTCUT: None

FUNCTION: Projects the physical structure onto the XY-plane from the bottom

PYTHON COMMAND: None

<table>
<tr>
<td> [[Image:bottom_view.png|thumb|500px|EM.Cube's bottom view of project workspace.]] </td>
</tr>
</table>

== Copy Tool ==

ICON: [[File:copy.png]]

MENU: '''Edit → Copy'''

KEYBOARD SHORTCUT: {{key | Ctrl+C}}

FUNCTION: Copies the selection into the Windows clipboard

PYTHON COMMAND: None

== Cut Tool ==

ICON: [[File:cut.png]]

MENU: '''Edit → Cut'''

KEYBOARD SHORTCUT: {{key | Ctrl+X}}

FUNCTION: Removes the selection from the project workspace and places it in the Windows clipboard

PYTHON COMMAND: None

== Delete Tool ==

ICON: [[File:delete.png]]

MENU: '''Edit → Delete'''

KEYBOARD SHORTCUT: {{key | Delete}} '''Key'''

FUNCTION: Deletes the selection from the project workspace

PYTHON COMMAND: delete(node_name)

== Front View ==

ICON: [[File:view-front_tn.png]]

MENU: '''View → Set View → Front View'''

KEYBOARD SHORTCUT: None

FUNCTION: Projects the physical structure onto the ZX-plane from the front

PYTHON COMMAND: None

<table>
<tr>
<td> [[Image:front_view.png|thumb|500px|EM.Cube's front view of project workspace.]] </td>
</tr>
</table>

== Generate CAD Report ==

ICON: None

MENU: '''File → Generate CAD Report'''

KEYBOARD SHORTCUT: None

FUNCTION: Generates a text file called “cad_report.TXT” listing all the current geometrical objects in the project workspace along with their type, LCS coordinates, rotation angles and extents. In the case of array objects, it reports the parameters of the key element and the number of array elements

PYTHON COMMAND: None

== Grid Properties ==

ICON: None

MENU: '''View → Grid Properties...'''

KEYBOARD SHORTCUT: None

FUNCTION: Modifies the type and settings of the project workspace's grid

NOTES, SPECIAL CASES OR EXCEPTIONS: [[EM.Cube]] offers two different types of grid: Adaptive and fixed. Note that the grid is hidden by default and can be displayed from the preferences dialog. The adaptive grid is the default choice, and its grid cell size changes dynamically according the viewport size. As a result of this, during a dynamic zoom process, the grid seems to maintain almost the same size even though your physical structure looks bigger or smaller depending on whether you zoom in or zoom out. The fixed grid, on the other hand, always maintains fixed dimensions and a fixed grid cell size. Therefore, the fixed grid grows or shrinks along with your physical structure due to a dynamic zoom operation. With a fixed grid, you can set different grid cell dimensions along the three principal axes.

PYTHON COMMAND: None

<table>
<tr>
<td> [[Image:VIEW MAN5.png|thumb|left|480px|EM.Cube's Grid Settings dialog.]] </td>
</tr>
</table>

<table>
<tr>
<td> [[Image:VIEW MAN6.png|thumb|left|550px|EM.Cube's adaptive grid.]] </td>
</tr>
<tr>
<td> [[Image:VIEW MAN7.png|thumb|left|550px|EM.Cube's fixed grid.]] </td>
</tr>
</table>

== Help ==

ICON: [[File:help.png]]

MENU: '''Help → Help Index'''

KEYBOARD SHORTCUT: {{key | Ctrl+Shift+H}}

FUNCTION: Opens the Help Index dialog

PYTHON COMMAND: None

== Left View ==

ICON: [[File:view-left_tn.png]]

MENU: '''View → Set View → Left View'''

KEYBOARD SHORTCUT: None

FUNCTION: Projects the physical structure onto the YZ-plane from the left

PYTHON COMMAND: None

<table>
<tr>
<td> [[Image:left_view.png|thumb|500px|EM.Cube's left view of project workspace.]] </td>
</tr>
</table>

== Merge Viewport ==

ICON: [[File:single-port-view_tn.png]]

MENU: '''View → Merge Viewport'''

KEYBOARD SHORTCUT: {{key | End}} '''Key'''

FUNCTION: Merges the four-port view into the normal single-port view

PYTHON COMMAND: None

== New Project ==

ICON: [[File:new.png]]

MENU: '''File → New Project...'''

KEYBOARD SHORTCUT: {{key | Ctrl+N}}

FUNCTION: Starts a new blank [[EM.Cube]] project

PYTHON COMMAND: None

<table>
<tr>
<td> [[Image:Newproj.png|thumb|550px|EM.Cube's New Project Dialog.]] </td>
</tr>
</table>

== Open Project ==

ICON: [[File:open.png]]

MENU: '''File → Open Project...'''

KEYBOARD SHORTCUT: {{key | Ctrl+O}}

FUNCTION: Opens an existing [[EM.Cube]] project

PYTHON COMMAND: None

== Pan View Tool ==

ICON: [[File:pan-tool_tn.png]]

MENU: '''View → Pan View'''

KEYBOARD SHORTCUT: {{key | Shift+RMB}}

FUNCTION: Moves the viewport around while the mouse is dragged

PYTHON COMMAND: None

== Paste Tool ==

ICON: [[File:paste.png]]

MENU: '''Edit → Paste'''

KEYBOARD SHORTCUT: {{key | Ctrl+V}}

FUNCTION: Places the contents of the Windows clipboard on the project workspace

PYTHON COMMAND: None

== Perspective View ==

ICON: [[File:view-perspective_tn.png]]

MENU: '''View → Set View → Perspective View'''

KEYBOARD SHORTCUT: {{key | Home}} '''Key'''

FUNCTION: Sets an isometric view of the physical structure on an XY-plane

PYTHON COMMAND: None

<table>
<tr>
<td> [[Image:perspective.png|thumb|500px|EM.Cube's perspective view of project workspace.]] </td>
</tr>
</table>

== Print ==

ICON: [[File:print.png]]

MENU: '''File → Print...'''

KEYBOARD SHORTCUT: {{key | Ctrl+P}}

FUNCTION: Prints the contents of the main window on the specified printer

PYTHON COMMAND: None

== Project Notes ==

ICON: None

MENU: '''File → Project Notes'''

KEYBOARD SHORTCUT: None

FUNCTION: Opens a reserved text file called “project_notes.TXT” that can be used by the user to save project-related notes, comments and data

PYTHON COMMAND: None

== Redo Tool ==

ICON: [[File:redo.png]]

MENU: '''Edit → Redo'''

KEYBOARD SHORTCUT: {{key | Ctrl+Y}}

FUNCTION: Redoes the last operation

PYTHON COMMAND: None

== Restore Program Defaults ==

ICON: None

MENU: '''File → Restore Program Defaults'''

KEYBOARD SHORTCUT: None

FUNCTION: Restores the original black background and yellow selection color and turns off the project workspace's grid

PYTHON COMMAND: None

== Right View ==

ICON: [[File:view-right_tn.png]]

MENU: '''View → Set View → Right View'''

KEYBOARD SHORTCUT: None

FUNCTION: Projects the physical structure onto the YZ-plane from the right

PYTHON COMMAND: None

<table>
<tr>
<td> [[Image:right_view.png|thumb|500px|EM.Cube's right view of project workspace.]] </td>
</tr>
</table>

== Rotate View Tool ==

ICON: [[File:rotate-tool_tn.png]]

MENU: '''View → Rotate View'''

KEYBOARD SHORTCUT: {{key | RMB}} or {{key | Alt+RMB}}

FUNCTION: Rotates the viewport about the origin of the world coordinate system (WCS) while the mouse is dragged

NOTES, SPECIAL CASES OR EXCEPTIONS: Using the right mouse button ({{key | RMB}}) for rotating the view is a temporary operation and it doesn't change [[EM.Cube]]'s view mode. Clicking on the "Rotate View" button of the View Toolbar changes [[EM.Cube]]'s view mode to the "Rotate View Mode". In this mode, you can drag the mouse using either of the left or right mouse buttons to rotate the view about different axes. Also note that the axis of rotation in the case of rotate view mode is different than the axis of rotation using the temporary {{key | RMB}} or {{key | Alt+RMB}} shortcuts.

PYTHON COMMAND: None

== Save Project ==

ICON: [[File:save.png]]

MENU: '''File → Save Project...'''

KEYBOARD SHORTCUT: {{key | Ctrl+S}}

FUNCTION: Saves the current [[EM.Cube]] project

PYTHON COMMAND: None

== Save Project As ==

ICON: [[File:save.png]]

MENU: '''File → Save Project As...'''

KEYBOARD SHORTCUT: {{key | Ctrl+W}}

FUNCTION: Saves the current [[EM.Cube]] project under a different name

PYTHON COMMAND: None

== Save Python Command History ==

ICON: None

MENU: '''File → Save Python Command History'''

KEYBOARD SHORTCUT: None

FUNCTION: Saves all the successfully executed Python commands in [[EM.Cube]]’ Python Interpreter during the current session of the current project in a reserved Python file called “python_history.PY”

PYTHON COMMAND: None

== Select Tool ==

ICON: [[File:select-tool_tn.png]]

MENU: '''View → Normal View'''

KEYBOARD SHORTCUT: {{key | Esc}} '''Key'''

FUNCTION: Returns to the normal select mode

PYTHON COMMAND: None

== Snap to Edge ==

ICON: None

MENU: '''View → Snap → Snap to Edge'''

KEYBOARD SHORTCUT: {{key | E}}

FUNCTION: Toggles the "Snap-to-Edge" mode. In this mode, the mouse snaps to a point on the nearest object edge. Both the edge and the point on it are highlighted. You can move the mouse incrementally and locally on the highlighted edge. This mode is particularly useful for CAD operations that require selecting an object edge such as extruding, lofting or revolving an edge or bridging between two edges.

PYTHON COMMAND: None

== Snap to Face ==

ICON: None

MENU: '''View → Snap → Snap to Face'''

KEYBOARD SHORTCUT: {{key | F}}

FUNCTION: Toggles the "Snap-to-Face" mode. In this mode, the mouse snaps to a point on the nearest object face. Both the face and the point on it are highlighted. You can move the mouse incrementally and locally on the surface of the highlighted face. This mode is particularly useful for CAD operations that require selecting an object face such as extruding, lofting or revolving a face or skinning between two faces.

PYTHON COMMAND: None

== Snap to Grid ==

ICON: None

MENU: '''View → Snap → Snap to Grid'''

KEYBOARD SHORTCUT: {{key | G}}

FUNCTION: Toggles the "Snap-to-Grid" mode. In this mode, the mouse snaps to a point on the project workspace's grid. In that case, a small white (round or square) point appears on the screen beside the normal arrow cursor that shows the current location of the mouse in the project workspace. [[EM.Cube]]'s snap-to-grid mode is enabled by default. Note that you can enable the snap-to-grid mode without having to display the grid on the screen.

PYTHON COMMAND: None

== Snap to Node ==

ICON: None

MENU: '''View → Snap → Snap to Node'''

KEYBOARD SHORTCUT: {{key | N}}

FUNCTION: Toggles the "Snap-to-Node" mode. In this mode, the mouse snaps to the nearest object snap point. However, only a node, vertex or point is highlighted.

PYTHON COMMAND: None

== Snap to Object ==

ICON: None

MENU: '''View → Snap → Snap to Object'''

KEYBOARD SHORTCUT: {{key | O}}

FUNCTION: Toggles the "Snap-to-Object" mode. In this mode, the mouse snaps to the nearest object snap point. If the snap point is the midpoint of an edge, the edge is also highlighted. If the snap point is the center of a face, the fact is also highlighted. [[EM.Cube]]'s snap-to-object mode is enabled by default.

PYTHON COMMAND: None

== Split Viewport ==

ICON: [[File:four-port-view_tn.png]]

MENU: '''View → Split Viewport'''

KEYBOARD SHORTCUT: None

FUNCTION: Displays a four-port view of the project workspace

NOTES, SPECIAL CASES OR EXCEPTIONS: Splitting the viewport provides simultaneous Perspective, Top, Front and Right views in the Project Workspace. Each split viewport’s settings can be changed individually. The name of the active viewport on which changes apply is always highlighted with a dark blue background; inactive views are indicated by a gray background. In the Four-Port View mode, you can zoom, extents or rotate the view for each viewport individually.

PYTHON COMMAND: None

<table>
<tr>
<td> [[Image:fourport_new.png|thumb|500px|EM.Cube's four-port view of project workspace.]] </td>
</tr>
</table>

== Toggle Navigation Tree ==

ICON: [[File:navtree.png]]

MENU: '''View → Navigation Tree'''

KEYBOARD SHORTCUT: None

FUNCTION: Toggles the visibility of the navigation tree window

PYTHON COMMAND: None

== Top View ==

ICON: [[File:view-top_tn.png]]

MENU: '''View → Set View → Top View'''

KEYBOARD SHORTCUT: None

FUNCTION: Projects the physical structure onto the XY-plane from the top

PYTHON COMMAND: None

<table>
<tr>
<td> [[Image:top_view.png|thumb|500px|EM.Cube's top view of project workspace.]] </td>
</tr>
</table>

== Undo Tool ==

ICON: [[File:undo.png]]

MENU: '''Edit → Undo'''

KEYBOARD SHORTCUT: {{key | Ctrl+Z}}

FUNCTION: Undoes the last operation

PYTHON COMMAND: None

== Undo View Change / Redo View Change ==

ICON: [[File:undo-view-change_tn.png]]

MENU: '''View → Undo View Change''', '''View → Redo View Change'''

KEYBOARD SHORTCUT: None

FUNCTION: Reverts the viewport to the previous view angle and distance

PYTHON COMMAND: None

== User Preferences ==

ICON: None

MENU: '''Edit → Preferences...'''

KEYBOARD SHORTCUT: {{key | Ctrl+H}}

FUNCTION: Opens the "User Preferences" dialog from which you can control a number of permanent project settings

PYTHON COMMAND: None

<table>
<tr>
<td> [[Image:VIEW MAN40.png|thumb|left|480px|The "Colors" tab of the user preferences dialog.]] </td>
</tr>
<tr>
<td> [[Image:VIEW MAN41.png|thumb|left|480px|The "Objects" tab of the user preferences dialog.]] </td>
</tr>
<tr>
<td> [[Image:VIEW MAN42.png|thumb|left|480px|The "Guides" tab of the user preferences dialog.]] </td>
</tr>
<tr>
<td> [[Image:VIEW MAN43.png|thumb|left|480px|The "Spin Buttons" tab of the user preferences dialog.]] </td>
</tr>
<tr>
<td> [[Image:VIEW MAN44.png|thumb|left|480px|The "Advanced" tab of the user preferences dialog.]] </td>
</tr>
</table>

== Viewport Properties ==

ICON: None

MENU: '''View → Viewport Properties...'''

KEYBOARD SHORTCUT: None

FUNCTION: Modifies the default settings of the viewport

NOTES, SPECIAL CASES OR EXCEPTIONS: This dialog is used to set the size and boundaries of the viewport manually. You can set the viewport size by specifying the coordinates of the "Top-Left-Near" and "Bottom-Right-Far" points. You can also set the coordinates of the viewing camera location.

PYTHON COMMAND: None

<table>
<tr>
<td> [[Image:viewport_settings.png|thumb|600px|EM.Cube's Viewport Settings dialog.]] </td>
</tr>
</table>

== Workspace Screen Capture ==

ICON: None

MENU: '''File → Workspace Screen Capture'''

KEYBOARD SHORTCUT: None

FUNCTION: Creates a bitmap image of a screenshot the project workspace

NOTES, SPECIAL CASES OR EXCEPTIONS: The bitmap screenshot is stored in the "images" subfolder of the current project folder. It is listed under the "Image Files" tab of the data manager.

PYTHON COMMAND: None

== XY Plane ==

ICON: [[File:xygrid_tool_tn.png]]

MENU: '''View → Work Plane → XY Plane'''

KEYBOARD SHORTCUT: {{key | Z}}

FUNCTION: Makes the principal XY plane the active work plane

PYTHON COMMAND: None

<table>
<tr>
<td> [[Image:xy_view.png|thumb|500px|EM.Cube's perspective view of project workspace with active XY work plane and enabled grid.]] </td>
</tr>
</table>

== YZ Plane ==

ICON: [[File:yzgrid_tool_tn.png]]

MENU: '''View → Work Plane → YZ Plane'''

KEYBOARD SHORTCUT: {{key | X}}

FUNCTION: Makes the principal YZ plane the active work plane

PYTHON COMMAND: None

<table>
<tr>
<td> [[Image:yz_view.png|thumb|500px|EM.Cube's perspective view of project workspace with active YZ work plane and enabled grid.]] </td>
</tr>
</table>

== Zoom Tool ==

ICON: [[File:zoom-tool_tn.png]]

MENU: '''View → Zoom → Dynamic'''

KEYBOARD SHORTCUT: {{key | Ctrl+RMB}} or '''Mouse Scroll Wheel'''

FUNCTION: Zooms into or out of the project workspace while the mouse is dragged up or down, respectively

PYTHON COMMAND: None

== Zoom To Extents Tool I ==

ICON: [[File:zoom-to-extent_tn.png]]

MENU: '''View → Zoom → Extents'''

KEYBOARD SHORTCUT: {{key | Ctrl+E}}

FUNCTION: Automatically zooms to fit the whole physical structure into the main window

PYTHON COMMAND: zoom_extents()

== Zoom To Extents Tool II ==

ICON: [[File:zoom-to-extent_tn.png]] (right-click)

MENU: '''View → Zoom → Extents All'''

KEYBOARD SHORTCUT: {{key | Ctrl+Shift+E}}

FUNCTION: Automatically zooms to fit the whole physical structure into all four viewports in the four-port view mode

PYTHON COMMAND: None

== Zoom To Selected Tool ==

ICON: [[File:zoom-to-selected_tn.png]]

MENU: '''View → Zoom → Selected'''

KEYBOARD SHORTCUT: None

FUNCTION: Automatically zooms to fit the highlighted object into the main window

PYTHON COMMAND: None

== Zoom Window Tool ==

ICON: [[File:zoom-to-area_tn.png]]

MENU: '''View → Zoom → Window'''

KEYBOARD SHORTCUT: None

FUNCTION: Draws a window to define the zoom boundaries

PYTHON COMMAND: None

== ZX Plane ==

ICON: [[File:zxgrid_tool_tn.png]]

MENU: '''View → Work Plane → ZX Plane'''

KEYBOARD SHORTCUT: {{key | Y}}

FUNCTION: Makes the principal ZX plane the active work plane

PYTHON COMMAND: None

<table>
<tr>
<td> [[Image:zx_view.png|thumb|500px|EM.Cube's perspective view of project workspace with active ZX work plane and enabled grid.]] </td>
</tr>
</table>

 

<hr>

[[Image:Top_icon.png|30px]] '''[[#New Project | Back to the Top of the Page]]'''

[[Image:Back_icon.png|30px]] '''[[Getting_Started_with_EM.Cube| Back to Getting Started with EM.Cube]]'''

[[Image:Back_icon.png|30px]] '''[[Building_Geometrical_Constructions_in_CubeCAD | Back to CubeCAD Page]]'''

[[Image:Back_icon.png|30px]] '''[[EM.Cube | Back to EM.Cube Main Page]]'''

EM.Cube

2024-10-08T20:23:58Z

Asabet: /* link=Getting_Started_with_EM.Cube link=Building_Geometrical_Constructions_in_CubeCAD EM.Cube Suite Documentation */

[[File:emcubePAGE.png|thumb|450px]]
MODULAR 3D ELECTROMAGNETIC SIMULATION SUITE 
      THAT GROWS WITH YOUR MODELING NEEDS
<table>
<tr>
<td>[[image:Cube-icon.png | link=Getting_Started_with_EM.Cube]] [[image:cad-ico.png | link=Building_Geometrical_Constructions_in_CubeCAD]] [[image:fdtd-ico.png | link=EM.Tempo]] [[image:prop-ico.png | link=EM.Terrano]] [[image:static-ico.png | link=EM.Ferma]] [[image:planar-ico.png | link=EM.Picasso]] [[image:metal-ico.png | link=EM.Libera]] [[image:po-ico.png | link=EM.Illumina]]</td>
<tr>
</table>

'''Welcome to EM.Cube Wiki!'''

== [[image:Cube-icon.png | link=Getting_Started_with_EM.Cube]][[image:cad-ico.png | link=Building_Geometrical_Constructions_in_CubeCAD]] EM.Cube Suite Documentation ==

* [[Getting Started with EM.Cube]]
* [[What%27s_New_in_EM.Cube_R21.1%3F | What's New in EM.Cube 2021?]]
* [[A Review of Maxwell's Equations & Computational Electromagnetics (CEM)]]
* [[Numerical Modeling of Electromagnetic Problems Using EM.Cube]]
* [[Building Geometrical Constructions in CubeCAD]]
* [[Preparing Physical Structures for Electromagnetic Simulation]]
* [[Defining Project Observables & Visualizing Output Data]]
* [[Parametric Modeling & Simulation Modes in EM.Cube]]
* [[Using Python to Create Functions, Models & Scripts]]
* [[Hybrid Modeling in EM.Cube Using Multiple Simulation Engines]]

* [[Glossary of EM.Cube's Basic File, Edit & View Operations]]
* [[Glossary of EM.Cube's Standard Geometric Objects]]
* [[Glossary of EM.Cube's CAD Tools]]
* [[Glossary of EM.Cube's Materials, Sources, Devices & Other Physical Object Types]]



* [[Glossary of EM.Cube's Observables, Data & Graph Types]]
* [[Glossary of EM.Cube's Simulation-Related Operations]]
* [[Glossary of EM.Cube's Wizards]]
* [[Glossary of EM.Cube's Python Functions]]
* [[EM.Cube Glossary]]
* [[EM.Cube Application Gallery]]
 

== [[image:fdtd-ico.png]] EM.Tempo Documentation ==

[[EM.Tempo|EM.Tempo Manual]]

[[EM.Tempo]] Tutorial Lessons

* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_1.pdf EMTempo Tutorial Lesson 1: Analyzing A Center-Fed Resonant Dipole Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson1.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_2.pdf EMTempo Tutorial Lesson 2: Analyzing Scattering From A Sphere] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson2.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_3.pdf EMTempo Tutorial Lesson 3: Modeling A Probe-Fed Microstrip Patch Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson3.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_4.pdf EMTempo Tutorial Lesson 4: Modeling A Patch Antenna Array] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson4.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_5.pdf EMTempo Tutorial Lesson 5: Analyzing A Planar Microstrip Band-Stop Filter] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson5.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_6.pdf EMTempo Tutorial Lesson 6: Modeling Rectangular Waveguide Structures] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson6.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_7.pdf EMTempo Tutorial Lesson 7: Designing A Pyramidal Horn Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson7.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_8.pdf EMTempo Tutorial Lesson 8: Analyzing A Periodic Frequency Selective Surface] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson8.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_9.pdf EMTempo Tutorial Lesson 9: Modeling Coplanar Waveguide Structures And Lumped Devices] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson9.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_10.pdf EMTempo Tutorial Lesson 10: Modeling Wave Propagation In Dispersive Media] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson10.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_11.pdf EMTempo Tutorial Lesson 11: Simulating A Monopole Antenna Interacting With A Human Head Model] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson11.zip [Download projects]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Tempo L1 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_1.pdf]]
| style="width:50px;" | [[image:Tempo L2 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_2.pdf]]
| style="width:50px;" | [[image:Tempo L3 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_3.pdf]]
| style="width:50px;" | [[image:Tempo L4 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_4.pdf]]
| style="width:50px;" | [[image:Tempo L5 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_5.pdf]]
| style="width:50px;" | [[image:Tempo L6 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_6.pdf]]
| style="width:50px;" | [[image:Tempo L7 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_7.pdf]]
| style="width:50px;" | [[image:Tempo L8 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_8.pdf]]
| style="width:50px;" | [[image:Tempo L9 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_9.pdf]]
| style="width:50px;" | [[image:Tempo L10 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_10.pdf]]
| style="width:50px;" | [[image:Tempo L11 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_11.pdf]]
|}
 

== [[image:prop-ico.png]] EM.Terrano Documentation ==

[[EM.Terrano|EM.Terrano Manual]]

[[EM.Terrano]] Tutorial Lessons

* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_1.pdf EM.Terrano Tutorial Lesson 1: Analyzing A Basic Line-Of-Sight Propagation Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson1.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_2.pdf EM.Terrano Tutorial Lesson 2: Examining A Polarimetric Propagation Channel] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson2.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_3.pdf EM.Terrano Tutorial Lesson 3: Analyzing A Multipath Outdoor Propagation Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson3.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_4.pdf EM.Terrano Tutorial Lesson 4: Analyzing Indoor Propagation Inside a Building Model with Penetrable Walls] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson4.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_5.pdf EM.Terrano Tutorial Lesson 5: Simulating A Dense Urban Canyon Propagation Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson5.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_6.pdf EM.Terrano Tutorial Lesson 6: Modeling Irregular Terrain] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson6.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_7.pdf EM.Terrano Tutorial Lesson 7: Parametric Study Of A Realistic Urban Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson7.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_8.pdf EM.Terrano Tutorial Lesson 8: Simulating A Communications Link With Directional Antennas] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson8.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_9.pdf EM.Terrano Tutorial Lesson 9: A SBR Channel Analysis of An Urban Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson9.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_10.pdf EM.Terrano Tutorial Lesson 10: Modeling A Mobile Communications Link] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson10.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_11.pdf EM.Terrano Tutorial Lesson 11: Performing Link Margin Analysis Over the Spherical Earth] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson11.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_12.pdf EM.Terrano Tutorial Lesson 12: Simulating a Communication Link Involving Software-Defined Radios] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson12.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_13.pdf EM.Terrano Tutorial Lesson 13: Simulating Links with Directional Antennas on Rotating Platforms] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson13.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_14.pdf EM.Terrano Tutorial Lesson 14: Atmospheric Propagation Effects & Tropospheric Ducting] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson14.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_15.pdf EM.Terrano Tutorial Lesson 15: Performing Link Margin Analysis on a Realistic Terrain Model] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson15.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_16.pdf EM.Terrano Tutorial Lesson 16: Performing Link Margin Analysis above a Sea Surface Model] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson16.zip [Download projects]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Terrano L1 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_1.pdf]]
| style="width:50px;" | [[image:Terrano L2N Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_2.pdf]]
| style="width:50px;" | [[image:Terrano L3N Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_3.pdf]]
| style="width:50px;" | [[image:Terrano L4N Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_4.pdf]]
| style="width:50px;" | [[image:Terrano L5N Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_5.pdf]]
| style="width:50px;" | [[image:Terrano L6N Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_6.pdf]]
| style="width:50px;" | [[image:Terrano L7N Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_7.pdf]]
| style="width:50px;" | [[image:Terrano L8N Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_8.pdf]]
| style="width:50px;" | [[image:Terrano L9N Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_9.pdf]]
|}
 

== [[image:static-ico.png]] EM.Ferma Documentation ==

[[EM.Ferma|EM.Ferma Manual]]

[[EM.Ferma]] Tutorial Lessons

* [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_1.pdf EM.Ferma Tutorial Lesson 1: Computing The Electric Field & Potential Due To Spherical Charges] [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson1.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_2.pdf EM.Ferma Tutorial Lesson 2: Analyzing A Parallel Plate Capacitor] [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson2.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_3.pdf EM.Ferma Tutorial Lesson 3: Modeling Objects Immersed In A Uniform Electric Field] [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson3.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_4.pdf EM.Ferma Tutorial Lesson 4: Computing The Magnetic Field Of Linear Currents In Free Space & Magnetic Media] [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson4.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_5.pdf EM.Ferma Tutorial Lesson 5: Modeling Solenoids & Toroidal Coils] [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson5.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_6.pdf EM.Ferma Tutorial Lesson 6: Analyzing Permanent Magnets] [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson6.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_7.pdf EM.Ferma Tutorial Lesson 7: Analyzing A Microstrip Transmission Line] [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson7.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_8.pdf EM.Ferma Tutorial Lesson 8: Modeling 2D Coplanar Waveguide Structures] [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson8.zip [Download projects]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Ferma L1 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_1.pdf]]
| style="width:50px;" | [[image:Ferma L2 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_2.pdf]]
| style="width:50px;" | [[image:Ferma L3 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_3.pdf]]
| style="width:50px;" | [[image:Ferma L4 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_4.pdf]]
| style="width:50px;" | [[image:Ferma L5 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_5.pdf]]
| style="width:50px;" | [[image:Ferma L6 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_6.pdf]]
| style="width:50px;" | [[image:Ferma L7 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_7.pdf]]
| style="width:50px;" | [[image:Ferma L8 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_8.pdf]]
|}
 

== [[image:planar-ico.png]] EM.Picasso Documentation ==

[[EM.Picasso|EM.Picasso Manual]]

[[EM.Picasso]] Tutorial Lessons

* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_1.pdf EM.Picasso Tutorial Lesson 1: Analyzing A Microstrip-Fed Patch Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson1.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_2.pdf EM.Picasso Tutorial Lesson 2: Designing A Patch Antenna With A Recessed Feed] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson2.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_3.pdf EM.Picasso Tutorial Lesson 3: Analyzing A Planar Microstrip Band-Stop Filter] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson3.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_4.pdf EM.Picasso Tutorial Lesson 4: Designing A Circularly Polarized Probe-Fed Patch Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson4.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_5.pdf EM.Picasso Tutorial Lesson 5: Analyzing Patch Antenna Arrays] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson5.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_6.pdf EM.Picasso Tutorial Lesson 6: Analyzing A Periodic Frequency Selective Surface] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson6.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_7.pdf EM.Picasso Tutorial Lesson 7: Designing A Slot-Coupled Patch Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson7.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_8.pdf EM.Picasso Tutorial Lesson 8: Analyzing A CPW-Fed Folded Dipole Slot Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson8.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_9.pdf EM.Picasso Tutorial Lesson 9: Designing a Microstrip Wilkinson Power Divider] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson9.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_10.pdf EM.Picasso Tutorial Lesson 10: Optimizing A Microstrip Patch Antenna Design] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson10.zip [Download projects]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Picasso L1 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_1.pdf]]
| style="width:50px;" | [[image:Picasso L2 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_2.pdf]]
| style="width:50px;" | [[image:Picasso L3 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_3.pdf]]
| style="width:50px;" | [[image:Picasso L4 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_4.pdf]]
| style="width:50px;" | [[image:Picasso L5 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_5.pdf]]
| style="width:50px;" | [[image:Picasso L6 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_6.pdf]]
| style="width:50px;" | [[image:Picasso L7 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_7.pdf]]
| style="width:50px;" | [[image:Picasso L8 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_8.pdf]]
| style="width:50px;" | [[image:Picasso L9 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_9.pdf]]
| style="width:50px;" | [[image:Picasso L10 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_10.pdf]]
|}
 

== [[image:metal-ico.png]] EM.Libera Documentation ==

[[EM.Libera|EM.Libera Manual]]

[[EM.Libera]] Tutorial Lessons

* [http://www.emagtech.com/downloads/ProjectRepo/EMLibera_Lesson_1.pdf EM.Libera Tutorial Lesson 1: Analyzing A Center-Fed Wire Dipole Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMLibera_Lesson1.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMLibera_Lesson_2.pdf EM.Libera Tutorial Lesson 2: Designing A Yagi-Uda Dipole Array] [http://www.emagtech.com/downloads/ProjectRepo/EMLibera_Lesson2.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMLibera_Lesson_3.pdf EM.Libera Tutorial Lesson 3: Computing The Radar Cross Section Of Metallic, Dielectric & Composite Targets] [http://www.emagtech.com/downloads/ProjectRepo/EMLibera_Lesson3.zip [Download projects]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Libera L1 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMLibera_Lesson_1.pdf]]
| style="width:50px;" | [[image:Libera L2 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMLibera_Lesson_2.pdf]]
| style="width:50px;" | [[image:Libera L3 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMLibera_Lesson_3.pdf]]
|}
 

== [[image:po-ico.png]] EM.Illumina Documentation ==

[[EM.Illumina|EM.Illumina Manual]]

[[EM.Illumina]] Tutorial Lessons

* [http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson_1.pdf EM.Illumina Tutorial Lesson 1: Analyzing The Scattering From Metal Targets] [http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson1.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson_2.pdf EM.Illumina Tutorial Lesson 2: Computing The Radar Cross Section Of Corner Reflectors] [http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson2.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson_3.pdf EM.Illumina Tutorial Lesson 3: Computing The Radiation Pattern Of Parabolic Dish Reflectors] [http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson3.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson_4.pdf EM.Illumina Tutorial Lesson 4: Simulating Radiation In The Presence Of Large Metallic Shipboard Platforms] [http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson4.zip [Download projects]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Illumina L1 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson_1.pdf]]
| style="width:50px;" | [[image:Illumina L2 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson_2.pdf]]
| style="width:50px;" | [[image:Illumina L3 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson_3.pdf]]
| style="width:50px;" | [[image:Illumina L4 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson_4.pdf]]
|}

 

== [[image:Cube-icon.png | link=Getting_Started_with_EM.Cube]] EM.Cube Articles & Notes ==

Verification & Validation Articles

* [[V&V Article 1: Modeling Complex Frequency Selective Surfaces Using EM.Cube]]

* [[V&V Article 2: Computing Radar Cross Section Of Metallic Targets Using EM.Cube]]

* [[V&V Article 3: Modeling Broadband And Circularly Polarized Patch Antennas Using EM.Picasso]]

* [[V&V Article 4: Designing Wideband Dielectric Resonator Antennas Using EM.Tempo]]

* [[V&V Article 5: Modeling Dispersive Materials Using EM.Tempo]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:ART FSS title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_1:_Modeling_Complex_Frequency_Selective_Surfaces_Using_EM.Cube]]
| style="width:50px;" | [[image:ART RCS title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_2:_Computing_Radar_Cross_Section_Of_Metallic_Targets_Using_EM.Cube]]
| style="width:50px;" | [[image:ART UWB title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_3:_Modeling_Broadband_And_Circularly_Polarized_Patch_Antennas_Using_EM.Picasso]]
| style="width:50px;" | [[image:ART DRA title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_4:_Designing_Wideband_Dielectric_Resonator_Antennas_Using_EM.Tempo]]
| style="width:50px;" | [[image:ART DISP title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_5:_Modeling_Dispersive_Materials_Using_EM.Tempo]]
|}

Application Notes

* [[Application Note 1: Modeling Radar Signature Of Real-Sized Aircraft Using EM.Tempo]]

* [[Application Note 2: Modeling Polarimetric Wave Propagation In The Lower Manhattan Scene Using EM.Terrano]]

* [[Application Note 3: Designing A Slot-Coupled Patch Antenna Array With A Corporate Feed Network Using EM.Picasso]]

* [[Application Note 4: Modeling Large Parabolic Reflectors Illuminated By Pyramidal Horn Antennas Using EM.Cube]]

* [[Application Note 5: Simulating The Performance Of Installed Antennas On Vehicular Platforms Using EM.Tempo]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:ART AIR title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_1:_Modeling_Radar_Signature_Of_Real-Sized_Aircraft_Using_EM.Tempo]]
| style="width:50px;" | [[image:ART MANH Fig title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_2:_Modeling_Polarimetric_Wave_Propagation_In_The_Lower_Manhattan_Scene_Using_EM.Terrano]]
| style="width:50px;" | [[image:ART PATCH Fig title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_3:_Designing_A_Slot-Coupled_Patch_Antenna_Array_With_A_Corporate_Feed_Network_Using_EM.Picasso]]
| style="width:50px;" | [[image:ART PARAB Fig title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_4:_Modeling_Large_Parabolic_Reflectors_Illuminated_By_Pyramidal_Horn_Antennas_Using_EM.Cube]]
| style="width:50px;" | [[image:ART GOLF Fig title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_5:_Simulating_The_Performance_Of_Installed_Antennas_On_Vehicular_Platforms_Using_EM.Tempo]]
|}
 

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RF.Spice A/D Glossary

2024-10-07T16:14:44Z

Asabet:

==4-Bit ADC Bridge==

[[File:GK44.png]]

This 8-pin device is simply a bundle of 4 1-bit ADC bridges. Each analog input pin has a corresponding digital output pin.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|in_low||maximum 0-valued analog input||V||0.1||required
|-
|in_high||minimum 1-valued analog input||V||0.9||required
|-
|}

==4-Bit DAC Bridge==

[[File:GK45.png]]

This 8-pin device is simply a bundle of 4 1-bit DAC bridges. Each digital input pin has a corresponding analog output pin.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|out_low||analog output for 0 digital input||V||0||required
|-
|out_high||analog output for 1 digital input||V||1||required
|-
|}

== AC/RF Current Source ==

[[File:GL11.png]]

This is a simplified version of the standard Current Source, in which the AC "Use" box has been checked by default. Therefore, it is ready to be used for AC frequency sweep. Note that for AC frequency sweep, you do not need to specify the frequency.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|VA||peak current amplitude||A||1||required
|-
|Freq||frequency ||Hz||1||required
|-
|Phase||phase||deg||0||
|-
|offset||DC offset for small-signal current||A||0||
|-
|}

== AC/RF Voltage Source ==

[[File:GL10.png]]

This is a simplified version of the standard Voltage Source, in which the AC "Use" box has been checked by default. Therefore, it is ready to be used for AC frequency sweep. Note that for AC frequency sweep, you do not need to specify the frequency.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|VA||peak voltage amplitude||V||1||required
|-
|Freq||frequency ||Hz||1||required
|-
|Phase||phase||deg||0||
|-
|offset||DC offset for small-signal voltage||V||0||
|-
|}

==Alternate Ferrite Core Transformer==

[[File:GK96.png]]

The alternate ferrite core transformer is a four-pin two-port device, which has the same behavior as the [[Glossary of Generic Analog & Mixed-Mode Devices#Ferrite_Core_Transformer | Ferrite Core Transformer]], except for the reversed polarity of its secondary port.

==Alternate Ideal Transformer==

[[File:XFMR2.png]]

The alternate ideal transformer is a four-pin two-port device, which has the same behavior as the [[Glossary of Generic Analog & Mixed-Mode Devices#Ideal_Transformer | Ideal Transformer]], except for the reversed polarity of its secondary port.

== AM Modulated Source ==

[[File:GL23.png]]

This is a voltage source with a single-tone amplitude modulated waveform. The AM modulation index MDI is defined as the ratio of maximum amplitude deviation to maximum signal amplitude.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|V0||offset||V||0||
|-
|VA||amplitude||V||1||
|-
|FC||carrier frequency ||Hz||1||required
|-
|MDI||modulation index||-||0||required
|-
|FS||signal frequency ||Hz||1||required
|-
|}

== Analog Clock ==

[[File:GL30.png]]

This is a periodic pulse generator with a default 0V low output level and a default 5V high output level.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|delay||delay time||sec||0||
|-
|rise||rise time||sec||0.1n||
|-
|fall||fall time||sec||0.1n||
|-
|pulse_wid||clock pulse width||sec||1u||required
|-
|period||clock period||-||2u||required
|-
|out_low||low output voltage level||V||0||
|-|-
|out_high||high output voltage level||V||5||
|-
|}

==Analog-to-Digital Converter (ADC) Bridge==
[[File:GK42.png]]

The ADC Bridge takes an analog value from an analog node and may be in the form of a voltage or current.
If the input is less than or equal to "in_low", then a digital "0" is generated. If
the input is greater than or equal to "in_high", a digital "1" is generated. Otherwise,
a digital "UNKNOWN" is the output value. Unlike the DAC Bridge, ramping or delay is not applicable.
Rather, the continuous ramping of the input provides for any associated delays in the digitized signal.

This model also posts an input load value based on the parameter input_load.

Model Identifier: adc_bridge

Netlist Format:

A<device_name> [<in_pin> {<in2_pin>> ...}] [<out_pin> {<out2_pin> ...}] <model_name>

.model <model_name> adc_bridge {<param1 = value> < param2 = value> ...}

Example:

A [1] [2] adc_bridge

.model adc_bridge adc_bridge in_low = .1 fall_delay = 1n

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|in_low||maximum 0-valued analog input||V||0.1||required
|-
|in_high||minimum 1-valued analog input||V||0.9||required
|-
|rise_delay||L-to-H delay time||sec||1n||
|-
|fall_delay||H-to-L delay time||sec||1n||
|-
|}

== Arbitrary Temporal Waveform Generator ==

[[File:GL17.png]]

This is a voltage source with an arbitrary waveform defined by a mathematical expression. You have to open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text. Enter any mathematical expression in the variable "v(t)" standing for time.

Examples:

* v(t) is equivalent to f(t) = t.
* 0.1*(v(t))^2 is equivalent to f(t) = 0.1t^2.
* sin(2*pi*v(t)) is equivalent to f(t) = sin(2πt).

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|Tmax||maximum signal duration||sec||1e6||required
|-
|}

==Auto-Transformer==

[[File:GK102.png]]

This 3-pin device models an auto-transformer with mutual coupling effect.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|Lp||primary inductance||H||1m||
|-
|Ls||secondary inductance||H||1m||
|-
|k||coefficient of coupling||-||1.0||
|-
|}

==Bipolar Junction Transistor (BJT)==
[[File:G11.png]]

The BJT is an active device which has up to 4 pins. The three standard pins are base, emitter, and collector. These are given in the default symbol. The substrate, which is grounded by default, is the fourth pin. To use the BJT with the substrate, create a new 4-pin BJT using the Device Editor and Symbol Editor.

The standard device parameters are AREA, OFF, IC, and T. They are described below:

{| class="wikitable"
|-
|AREA||area factor (optional) (If not specified, the default value is 1.0.)
|-
|OFF||initial condition for the DC analysis (optional)
|-
|IC||initial condition (optional) (Used when a transient analysis is desired, which starts from other than the quiescent operating point.)
|-
|T||operating temperature of the device (optional)
|-
|}

Area factor scales the model parameters RE and RC. IC VBE is the initial voltage from base emitter. IC VCE is the initial voltage from collector to emitter. TEMP is the overriding temperature. These parameters are based on the Gummel and Poon integral-charge model. If these parameters are not specified, then it will reduce to the simpler Ebers-Moll model.

The process model is mandatory for the BJT. Descriptions of the process model parameters are given in the following table:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!EXAMPLE
|-
|IS||transport saturation current||A||1.0e-16||1.0e-15
|-
|BF||ideal maximum forward beta|| ||100||100
|-
|NF||forward current emission coefficient|| ||1.0||1
|-
|VAF||forward Early voltage||V||infinite||200
|-
|IKF||corner forward beta high current roll-off||A||infinite||0.01
|-
|ISE||B-E leakage saturation current||A||0||1.0e-13
|-
|NE||B-E leakage emission coefficient|| ||1.5||2
|-
|BR||ideal maximum reverse beta|| ||1||0.1
|-
|NR||reverse current emission coefficient|| ||1||1
|-
|VAR||reverse Early voltage||V||infinite||200
|-
|IKR||corner reverse beta high current roll-off||A||infinite||0.01
|-
|ISC||B-C leakage saturation current||A||0||1.0e-13
|-
|NC||B-C leakage emission coefficient|| ||2||1.5
|-
|RB||zero bias base resistance||ohms||0||100
|-
|IRB||current where base resistance falls halfway to minimum value||A||infinite||0.1
|-
|RBM||minimum base resistance at high currents||ohms||RB||10
|-
|RE||emitter resistance||ohms||0||1
|-
|RC||collector resistance||ohms||0||10
|-
|CJE||B-E zero bias depletion capacitance||F||0||2pF
|-
|VJE||B-E built-in potential||V||0.75||0.6
|-
|MJE||B-E junction exponential factor|| ||0.33||0.33
|-
|TF||ideal forward transit time||sec||0||0.1ns
|-
|XTF||coefficient for bias dependence of TF|| ||0||
|-
|VTF||voltage describing VBC dependence of TF||V||infinite||
|-
|ITF||high-current parameter for effect on TF||A||0||
|-
|PTF||excess phase at freq=1.0/(TF*2PI)Hz||degree||0||
|-
|CJC||B-C zero bias depletion capacitance||F||0||2pF
|-
|VJC||B-C built-in potential||V||0.75||0.5
|-
|MJC||B-C junction exponential factor|| ||0.33||0.5
|-
|XCJC||fraction of B-C depletion capacitance connected to internal base node|| ||1||
|-
|TR||ideal reverse transit time||sec||0||10ns
|-
|CJS||zero bias collector-substrate capacitance||F||0||2pF
|-
|VJS||substrate junction built-in potential||V||0.75||
|-
|MJS||substrate junction exponential factor|| ||0||0.5
|-
|XTB||forward and reverse beta temp. exponent|| ||0||
|-
|EG||energy gap for temperature effect on IS||eV||1.11||
|-
|XTI||temperature exponent for effect on IS|| ||3||
|-
|KF||flicker-noise coefficient|| ||0||
|-
|AF||flicker-noise exponent|| ||1||
|-
|FC||coefficient for forward bias depletion capacitance formula|| ||0.5||
|-
|TNOM||parameter measurement temperature||deg. C||27||50
|-
|}

==Capacitance Meter==
[[File:G37.png]]

The Capacitance Meter measures the total capacitance between a circuit node and the ground. The input pin of the device is connected to the measurement node. The output voltage of the device is then a scaled value equal to the total capacitance seen on its input multiplied by the gain parameter. This model is primarily intended as a building block for other models which must sense a capacitance value and alter their behavior based upon it.

Model Identifier: cmeter

Netlist Format:

A<device_name> <in_pin> <out_pin> <model_name>

.model <model_name> cmeter {<gain = value>}

Example:

A1 1 2 cap_meter

.model cap_meter cmeter gain = 1

Parameters:

The only parameter is the gain with a default value of 1.0.

==Capacitor==
[[File:GK120.png]]

Capacitors are used to store electrical energy. They can filter or remove AC signals or block DC current without disrupting AC signals. A capacitor's ability to store energy is termed capacitance and is measured in Farads, with values from pF to mF. The only time current flows through a capacitor is when the charge is collected on, or is removed from, its parallel plates. This means that the voltage across the capacitor is changing, which doesn't conform to DC analysis. In a physical circuit, there is a transition stage during which capacitors charge up to their final values. The result is the same as if these capacitors did not exist and the connections to them were left dangling. In other words, in a (steady-state) DC analysis, a capacitor behaves like an open circuit. Therefore, it is important that no section of the circuit is isolated from the capacitors. Every circuit node needs some path for DC current to the ground.

A capacitor's transient behavior is described by the equation:

i(t) = C * (dv(t)/dt)

Its initial voltage is only important when the simulator performs a transient analysis, and the "Use Initial Conditions" checkbox is checked.

An capacitor's AC behavior is described by the equation:

i = j ω * C * v

All capacitor names must begin with C.

Netlist Format:

C<device_name> <N+> <N-> <value>

Example:

C1 1 2 10p

[[RF.Spice A/D]] provides three types of capacitors: simple, user-defined (or real) and semiconductor. The standard capacitor parameters are N+, N-, VALUE, and IC. In a simple capacitor, VALUE must
be specified for the capacitance in Farads. IC is the (optional) initial condition for the capacitor voltage.

==Center-Tapped Ferrite Core Transformer==

[[File:GK97.png]]

This five-pin three-port device models a center-tapped physical transformer with a magnetic ferrite core. Its model is based on XSPICE's magnetic core and inductive coupling models. For this device you need to specify physical parameters like cross sectional area, core length and number of primary and secondary turns. The physical model of the magnetic device is defined by two vectors: magnetic field intensity H in A/m and magnetic flux density B (also known as magnetic induction) in Tesla. The default array values are:

H_array = [-250 -100 -50 -37.5 -25 -12.5 0 12.5 25 37.5 50 100 250]

B_array = [-0.375 -0.36 -0.32 -0.29 -0.24 -0.15 0 0.15 0.24 0.29 0.32 0.36 0.375]

To change the value of H/B arrays, open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|n_prim||number of primary inductor coupling turns||-||100||required
|-
|n_sec||number of full-winding secondary inductor coupling turns||-||100||required
|-
|area||cross-sectional area||m2||1e-5||
|-
|length||core length||m||0.01||
|-
|}

==Controlled Sine Wave Oscillator==

[[File:G24.png]]

This is a four-terminal function generator with a sinusoidal wave output, whose frequency is controlled by an input voltage. The functional dependency of the output frequency on the input voltage is piecewise linear and is defined as a two-dimensional table similar to a piecewise linear (PWL) controlled source. In the "frequency vs. voltage" curve, the array "cntl_array" defines voltage values in Volts and the array "freq_array" defines the corresponding frequencies in Hz.
This function has parameterizable values of low and high peak output voltage.

Model Identifier: sine

Netlist Form:

A<device_name> %vd(<cntl_in_pin> <cntl_in_ref_pin>) %vd(<out_pin>
<out_ref_pin>) <model_name>

.model <model_name> sine cntl_array = [<value1> <value2>]
freq_array = [<value1> <value2>] {<param1 = value> < param2 = value> ...}

Example:

A1 %vd(1 3) %vd(2 4) sine

.model sine sine cntl_array = [0 1] freq_array = [1 1000]

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|Cntl_array||control array||V||[0 1]||required
|-
|Freq_array||frequency array||Hz||[1 1000]||required
|-
|Out_low||output peak low value||V||-1.0||
|-
|Out_high||output peak high value||V||1.0||
|-
|}

==Controlled Sources==

Circuits can contain linear dependent sources characterized by one of the following equations (where g,
e, f, and h are constants representing transconductance, voltage gain, current gain, and transresistance,
respectively):

iout = g vin
     vout = e vin
     iout = f iin
     vout = h iin

For further information, refer to:

Linear Current Controlled Current Source (CCCS)

Linear Voltage Controlled Current Source (VCCS)

Linear Current Controlled Voltage Source (CCVS)

Linear Voltage Controlled Voltage Source (VCVS)

==Controlled Square Wave Oscillator==

[[File:G25.png]]

This is a four-terminal function generator with a square wave output, whose frequency is controlled by an input voltage. The functional dependency of the output frequency on the input voltage is piecewise linear and is defined as a two-dimensional table similar to a piecewise linear (PWL) controlled source. In the "frequency vs. voltage" curve, the array "cntl_array" defines voltage values in Volts and the array "freq_array" defines the corresponding frequencies in Hz.

Model Identifier: square

Netlist Format:

A<device_name> %vd(<cntl_in_pin> <cntl_in_ref_pin>) %vd(<out_pin>
<out_ref_pin>) <model_name>

.model <model_name> square cntl_array = [<value1> <value2>] freq_array = [<value1> <value2>] {<param1 = value> < param2 = value> ...}

Example:

A1 %vd(1 3) %vd(2 4) square

.model square square cntl_array = [0 1] freq_array = [1 1000]

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|Cntl_array||control array||V||[0 1]||required
|-
|Freq_array||frequency array||Hz||[0 1000]||required
|-
|Out_low||output peak low value||V||-1.0||
|-
|Out_high||output peak high value||V||1.0||
|-
|Duty_cycle||Duty cycle||-||0.5||
|-
|Rise_time||Output rise time||sec||1.0e-9||
|-
|Fall_time||Output fall time||sec||1.0e-9||
|-
|}

==Controlled Triangle Wave Oscillator==

[[File:G26.png]]

This is a four-terminal function generator with a triangle wave output, whose frequency is controlled by an input voltage. The functional dependency of the output frequency on the input voltage is piecewise linear and is defined as a two-dimensional table similar to a piecewise linear (PWL) controlled source. In the "frequency vs. voltage" curve, the array "cntl_array" defined voltage values in Volts and the array "freq_array" defines the corresponding frequencies in Hz.

Model Identifier: triangle

Netlist Format:

A<device_name> %vd(<cntl_in_pin> <cntl_in_ref_pin>) %vd(<out_pin>
<out_ref_pin>) <model_name>

.model <model_name> tirangle cntl_array = [<value1> <value2>]
freq_array = [<value1> <value2>]{<param1 = value> < param2 = value> ...}

Example:

A1 %vd(1 4) %vd(2 3) triangle

.model triangle triangle cntl_array = [0 1] freq_array = [1 1000]

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|Cntl_array||control array||V||[0 1]||required
|-
|Freq_array||frequency array||Hz||[0 1000]||required
|-
|Out_low||output peak low value||V||-1.0||
|-
|Out_high||output peak high value||V||1.0||
|-
|Rise_duty||Rise time duty cycle||0.5||
|-
|}

== Crystal ==

[[File:GK78.png]]

This is a 2-pin parameterized crystal device.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|CM||motional capacitance||F||10f||
|-
|C0||shunt capacitance||F||1p||
|-
|RM||motional resistance||Ohms||100||
|-
|LM||motional inductance||H||100m||
|-
|}

==Current Noise Source==

[[File:GL16.png]]

This is a current noise generator characterized by a spectral density and corner frequency. You have to click the {{key|Edit Model...}} button to access the [[parameters]] of this device.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|En||noise current||A/√Hz||1p||required
|-
|freq||noise corner frequency||Hz||100||required
|-
|}

==Current Source==

[[File:G17B.png]]

Current source has a DC value, a transient behavior, an AC behavior, and distortion parameters. The transient type, AC parameters, and distortion parameters are defined on the first tab of the source's property dialog. The transient expression can be a pulse, sinusoid, exponential, or piecewise linear. The DC value of a current source is its initial transient value. For a source with a sinusoidal transient behavior, for example, the DC value will be equal to its transient offset current. The AC parameters are magnitude and phase. These are used during the AC Frequency Sweep analysis. The distortion parameters, two sets of magnitude and phase, are used during the distortion analysis. The AC and distortion parameters are defined on the second tab of the source's property dialog.

==Current-Controlled Switch==

[[File:G20.png]]

Switches are devices that exhibit high resistance when open (OFF state) and low resistance when closed (ON state). The switch model allows an almost ideal switch to be specified. With careful selection of the on and off resistances, they can effectively represent zero and infinite resistances in comparison to other circuit elements, while sustaining the model condition of a positive, finite value.

There are two versions of Current-Controlled Switch: two-terminal and four-terminal. For the two-terminal device, you must specify the name of the controlling Ammeter or voltage source, as well as the turn-on and turn-off currents in Amperes and on and off resistance values in Ohms. The four-terminal device already provides nodes for a controlling ammeter, and you just specify the rest of [[parameters]]. When the current through the switch or controlling device is greater or equal to the turn-on current, the switch closes. When the current through the switch or controlling device is less than or equal to the turn off current, the switch opens.

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|I_ON||turn-on current||A||0.0||
|-
|I_OFF||turn-off current||A||0.0||
|-
|RON||closed resistance||Ohms||1.0||
|-
|ROFF||open resistance||Ohms||1/GMIN||
|-
|}

==Darlington Pair==

[[File:GK108.png]]

A Darlington pair is a three-pin device that consists of two interconnected BJT transistors of the same type. The collectors of two transistors are connected together to provide the "Collector" pin of the pair. The base of the first BJT acts the "Base" pin of the pair. The emitter of the first BJT is internally connected to the base of the second BJT. The emitter of the second BJT acts as the "Emitter" pin of the pair. There are two types of Darlington pair: NPN and PNP. The parameterized generic Darlington pair also contains a diode connected between the collector and emitter pin as well as two base-emitter resistors, one across each BJT.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|is_bjt||bjt saturation current||A||1.0e-12||
|-
|bf_bjt||bjt forward beta||-||150||
|-
|nf_bjt||bjt forward emission coefficient||-||1||
|-
|ise_bjt||B-E leakage saturation current||A||0||
|-
|ne_bjt||B-E leakage emission coefficient||-||1||
|-
|br_bjt||ideal maximum reverse beta||-||1||
|-
|nr_bjt||reverse current emission coefficient||-||1||
|-
|isc_bjt||B-C leakage saturation current||A||0||
|-
|nc_bjt||B-C leakage emission coefficient||-||1||
|-
|rb_bjt||zero bias base resistance||Ohms||0||
|-
|irb_bjt||current where base resistance falls halfway to minimum value||A||inf||
|-
|rbm_bjt||minimum base resistance at high currents||ohms||0||
|-
|re_bjt||emitter resistance||Ohms||0||
|-
|rc_bjt||collector resistance||Ohms||0||
|-
|cje_bjt||B-E zero bias depletion capacitance||F||0||
|-
|vje_bjt||B-E built-in potential||V||0.75||
|-
|mje_bjt||B-E junction grading coefficient||-||0.33||
|-
|cjc_bjt||B-C zero bias depletion capacitance||F||0||
|-
|vjc_bjt||B-C built-in potential||V||0.75||
|-
|mjc_bjt||B-C junction exponential factor||-||0.33||
|-
|tf_bjt||ideal forward transit time||sec||0||
|-
|tr_bjt||ideal reverse transit time||sec||0||
|-
|is_d||diode saturation current||A||1.0e-12||
|-
|rs_d||diode resistance||Ohms||0||
|-
|n_d||diode emission coefficient||-||1||
|-
|cjo_d||diode junction capacitance||F||0||
|-
|vj_d||diode junction potential||V||1||
|-
|m_d||diode grading coefficient|| ||0.5||
|-
|tnom||parameter measurement temperature||deg C||27||
|-
|r1||first base-emitter resistance||Ohms||1k||
|-
|r2||second base-emitter resistance||Ohms||1k||
|-
|}

==D Flip-Flop==

[[File:G52.png]]

The digital D-type flip-flop is a one-bit, edge-triggered storage element which stores data whenever the clock (CLK) input line transitions from 0 (low) to 1 (high). In addition, there are asynchronous set and reset signals, which are independent of the clock. When SET = RESET = 0, the data on the D line is transferred to the output Q on the rising edge of the clock. The combination SET = 1 and RESET = 0, causes Q = 1. The combination SET = 0 and RESET = 1 causes Q = 0. The combination SET = RESET = 1 is illegal and is resolved by setting both outputs Q and Q_bar to 1.

Truth Table:

<table>
<tr>
<td>
{| class="wikitable"
|-
! CLK !! D !! Q !! Notes
|-
|[[File:NonRising.png]] || X || Qprev || Hold State
|-
|[[File:Rising.png]] || 0 || 0 || Data Transfer
|-
|[[File:Rising.png]] || 1 || 1 || Data Transfer
|-
|}
</td>
</tr>
</table>

==D Latch==

[[File:G54.png]]

The digital D-type latch is a one-bit, level-sensitive storage element which outputs the value on the data (D) line whenever the enable (EN) input line is 1 (high). The value on the data line is stored, i.e., held on the output (Q) line whenever the enable (EN) line is 0 (low). In addition, there are set and reset signals, which are independent of the enable line. When SET = RESET = 0, the data on the D line is transferred to the output Q whenever EN = 1. The combination SET = 1 and RESET = 0, causes Q = 1. The combination SET = 0 and RESET = 1 causes Q = 0. The combination SET = RESET = 1 is illegal and is resolved by setting both outputs Q and Q_bar to 1.

Truth Table:

<table>
<tr>
<td>
{| class="wikitable"
|-
! EN !! D !! Q !! Notes
|-
|0 || X || Qprev || Hold State
|-
|1 || 0 || 0 || Reset
|-
|1 || 1 || 1 || Set
|-
|}
</td>
</tr>
</table>

== DC Bias Sources Vcc, Vee, Vdd, Vss ==

[[File:GL12.png]]

These are simple 1-pin DC voltage sources. Vcc and Vdd provide a positive voltage, while Vee and Vss provide a negative voltage

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|vcc||bias voltage||V||+15||required
|-
|vee||bias voltage||V||-15||required
|-
|vdd||bias voltage||V||+15||required
|-
|vss||bias voltage||V||-15||required
|-
|}

==Digital-to-Analog Converter (DAC) Bridge==

[[File:GK43.png]]

The DAC Bridge takes a digital value from a digital node and can only be eiter "0", "1",
or "U". It then outputs the value "out_low", "out_high" or "out_udndef",
or ramps linearly toward one of these "final" values from its curent analog output level. This
ramping speed depends on the values of "t_rise" and "t_fall".

Model Identifier: dac_bridge

Netlist Format:

A<device_name> [<in_pin> {<in2_pin>> ...}] [<out_pin> {<out2_pin> ...}] <model_name>

.model <model_name> dac_bridge {<param1 = value> < param2 = value> ...}

Example:

A [1] [2] dac_bridge

.model dac_bridge dac_bridge out_low = 0 fall_delay = 1n

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|out_low||analog output for 0 digital input||V||0||required
|-
|out_high||analog output for 1 digital input||V||1||required
|-
|out_undef||analog output for undefined digital input||V||0.5||required
|-
|input_load||capacitive input load||F||1p||
|-
|t_rise||L-to-H delay time||sec||1n||
|-
|t_fall||H-to-L delay time||sec||1n||
|-
|}

==Diode==

[[File:G9.png]]

Diodes allow current flow only in one direction, following their symbol's arrow, and thus can be used as simple solid
state switches in AC circuits.

The standard device parameters are AREA, OFF, IC, and T. They are described below:

{| class="wikitable"
|-
|AREA||area factor (optional) (If not specified, the default value is 1.0.)
|-
|OFF||initial condition for the DC analysis (optional)
|-
|IC||initial condition (optional) (Used when a transient analysis is desired, which starts from other than the quiescent operating point.)
|-
|T||operating temperature of the device (optional)
|-
|}

The process models can be either junction diodes or Schottky barrier diodes. Area factor scales the model parameters
IS, RS, CJO, and IBV. VD is the initial voltage, and TEMP is the overriding temperature. Descriptions of the process model parameters are given in the following table:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|IS||saturation current||A||1e-14||
|-
|TNOM||parameter measurement temperature||deg C||27||
|-
|RS||ohmic resistance||Ohms||0||
|-
|N||emission coefficient||-||1||
|-
|TT||transit-time||sec||0||
|-
|CJO||zero-bias junction capacitance||F||0||
|-
|VJ||junction potential||V||1||
|-
|M||grading coefficient||-||0.5||
|-
|EG||activation energy||eV||1.11||
|-
|XTI||saturation current temp. exp.||-||3.0||
|-
|KF||flicker noise coefficient||-||0||
|-
|AF||flicker noise exponent||-||1||
|-
|FC||forward bias junction fit parameter||-||0.5||
|-
|BV||reverse breakdown voltage||V||inf||
|-
|IBV||current at breakdown voltage||A||1e-3||
|-
|}

==Diode Bridge==

[[File:GK107.png]]

This four-pin device is a bridge configuration of four generic diodes.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|IS||saturation current||A||1e-14||
|-
|RS||ohmic resistance||Ohms||0||
|-
|N||emission coefficient||-||1||
|-
|TT||transit-time||sec||0||
|-
|CJO||zero-bias junction capacitance||F||10p||
|-
|VJ||junction potential||V||1||
|-
|M||grading coefficient||-||0.5||
|-
|BV||reverse breakdown voltage||V||1000||
|-
|IBV||current at breakdown voltage||A||1e-3||
|-
|TNOM||parameter measurement temperature||deg C||27||
|-
|}

==Doubly Center-Tapped Ferrite Core Transformer==

[[File:GK98.png]]

This six-pin four-port device models a doubly center-tapped physical transformer with a magnetic ferrite core. Its model is based on XSPICE's magnetic core and inductive coupling models. For this device you need to specify physical parameters like cross sectional area, core length and number of primary and secondary turns. The physical model of the magnetic device is defined by two vectors: magnetic field intensity H in A/m and magnetic flux density B (also known as magnetic induction) in Tesla. The default array values are:

H_array = [-250 -100 -50 -37.5 -25 -12.5 0 12.5 25 37.5 50 100 250]

B_array = [-0.375 -0.36 -0.32 -0.29 -0.24 -0.15 0 0.15 0.24 0.29 0.32 0.36 0.375]

To change the value of H/B arrays, open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|n_prim||number of full-winding primary inductor coupling turns||-||100||required
|-
|n_sec||number of full-winding secondary inductor coupling turns||-||100||required
|-
|area||cross-sectional area||m2||1e-5||
|-
|length||core length||m||0.01||
|-
|}

== DPDT Switch ==

[[File:GK74.png]]

This is an 8-pin device that models a double-pole double-throw switch. It has two input signals and four output pins. When the control voltage is at the high state, the first and second input voltages are transferred to the first and third output pins, respectively. When the control voltage is at the low state, the first and second input voltages are transferred to the second and fourth output pins, respectively.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|von||turn-on voltage||V||3.3||
|-
|voff||turn-off voltage||V||0.3||
|-
|vt||threshold voltage||V||1.0||
|-
|ron||on resistance||Ohms||1.0||
|-
|roff||off resistance||Ohms||1Gig||
|-
|}

== DPST Switch ==

[[File:GK73.png]]

This is a 6-pin device that models a double-pole single-throw switch. It has two input signals and two output signals. When the switch on, the first and second input voltages are transferred to the first and second output pins, respectively. When the switch is off, the output pin do not receive any input signals.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|von||turn-on voltage||V||3.3||
|-
|voff||turn-off voltage||V||0.3||
|-
|vt||threshold voltage||V||1.0||
|-
|ron||on resistance||Ohms||1.0||
|-
|roff||off resistance||Ohms||1Gig||
|-
|}

==Ferrite Core Transformer==

[[File:GK95.png]]

This four-pin two-port device models a physical transformer with a magnetic ferrite core. Its model is based on XSPICE's magnetic core and inductive coupling models. For this device you need to specify physical parameters like cross sectional area, core length and number of primary and secondary turns. The physical model of the magnetic device is defined by two vectors: magnetic field intensity H in A/m and magnetic flux density B (also known as magnetic induction) in Tesla. The default array values are:

H_array = [-250 -100 -50 -37.5 -25 -12.5 0 12.5 25 37.5 50 100 250]

B_array = [-0.375 -0.36 -0.32 -0.29 -0.24 -0.15 0 0.15 0.24 0.29 0.32 0.36 0.375]

To change the value of H/B arrays, open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|n_prim||number of primary turns||-||100||required
|-
|n_sec||number of secondary turns||-||100||required
|-
|area||cross-sectional area||m2||1e-5||
|-
|length||core length||m||0.01||
|-
|}

== FM Modulated Source ==

[[File:GL24.png]]

This is a voltage source with a single-tone frequency modulated waveform. The FM modulation index MDI is defined as the ratio of maximum frequency deviation to maximum signal amplitude.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|V0||offset||V||0||
|-
|VA||amplitude||V||1||
|-
|FC||carrier frequency ||Hz||1||required
|-
|MDI||modulation index||-||0||required
|-
|FS||signal frequency ||Hz||1||required
|-
|}

==Frequency Meter==
[[File:G114.png]]

The Frequency Meter is a four-pin shunt device that is connected in parallel with an AC source just like a voltmeter and measures the operating frequency of the AC circuit. The input pins are connected across the AC source. The voltage across the output pins is equal to the frequency of the source in Hertz within a scale factor SF. Note that the Frequency Meter is designed to work with a single-tone AC source of unit amplitude. If the amplitude of the source is not one, multiply the SF parameter by the non-unit source amplitude value. The output voltage of the Frequency Meter can be used in conjunction with linear or nonlinear dependent sources to model frequency-dependent quantities.

Model Identifier: fmeter

Parameters:

The only parameter is the scale factor SF with a default value of 1.0. Set SF = 1e-6 to read out the frequency in MHz. Set SF = 1e-9 to read out the frequency in GHz. Set SF = 6.283185 (2*pi) to read out the angular frequency ω in radian/s.

== Fuse ==

[[File:GK76.png]]

This is a 2-pin interactive current-controlled switch. If the current passing through the fuse is less than a specified threshold current, the switch is closed. If the current exceeds the threshold level, the fuse breaks and remains open thereafter. The device's symbol changes to display its state.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|r||resistance when intact||Ohms||1.0||
|-
|i_thresh||threshold current||A||1.0||
|-
|}

==Ground==

[[File:G15.png]]

Ground has a voltage of zero (0) and is used as a reference to compute electrical values in the circuit.
All circuits must be grounded to be properly simulated. There is no limit on the number of grounds
you may use in a circuit. All components connected to ground are referenced to a common point and treated
as linked through ground.

==Hysteresis Block (XSPICE)==

[[File:G37.png]]

The Hysteresis block is a simple buffer stage that provides hysteresis of the output with respect to the
input. The in_low and in_high parameter values. The output values are limited to out_lower_limit and
out_upper_limit. The value of \93hyst\94 is added to the in_low and in_high points in order to specify the
points at which the slope of the hysteresis function would normally change abruptly as the input transitions
from a low to a high value. Likewise, the value of \93hyst\94 is subtracted from the in_high and in_low values
in order to specify the points at which the slope of the hysteresis function would normally change abruptly
as the input transitions from a high to a low value. In fact, the slope of the hysteresis function is
never allowed to change abruptly but is smoothly varied whenever the input_dowmain smoothing parameter
is set greater than zero.

Model Identifier: hyst

Netlist Format:

A<device_name> <in_pin> <out_pin> <model_name>

.model <model_name> hyst {<param1 = value> < param2 = value> ...}

Example:

A1 1 2 hysteresis_block

.model hysteresis_block hyst in_low = 0.0 in_high = 1.0

Parameters:

{| class="wikitable"
|-
!Name!!Description!!Default
|-
|In_low||input low value||0.0
|-
|in_high||input high value||1.0
|-
|hyst||hysteresis||0.1
|-
|out_lower_limit||output lower limit||0.0
|-
|out_upper_limit||output upper limit||1.0
|-
|input_domain||input smoothing domain||0.01
|-
|fraction||smoothing fraction/absolute value switch||true
|-
|}

==Ideal Buffer Block==

[[File:GL40.png]]

This model is an ideal buffer block with a default unity gain.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|r_in||input resistance||Ω||1G||
|-
|r_out||output resistance||Ω||1u||
|-
|gain||gain||-||1.0||
|-
|}

==Ideal Center-Tapped Transformer with Push-Pull Input==

[[File:XFMR4.png]]

The ideal center-tapped transformer with push-pull input is a five-pin three-port device with two primary input ports and one secondary output port. Its model is based on the [[Glossary_of_Generic_Analog_Devices#Ideal_Transformer | Ideal Transformer]], and the relationship between its primary and secondary voltages is given by:

<math> \frac{v_P1}{v_S} = \frac{v_P2}{v_S} = n </math>

where vS is the secondary voltage, vP1 is measured between the top primary pin P1 and the center tap pin, and vP2 is measured between the center tap pin and the bottom primary pin P2. The red dots show the polarity of the windings on each side. This model has one parameter: ratio = n = NP1/NS = NP2/NS, which represents the primary-to-secondary (half-winding) turns ratio.

==Ideal Center-Tapped Transformer with Push-Pull Output==

[[File:XFMR3.png]]

The ideal center-tapped transformer with push-pull output is a five-pin three-port device with one primary input port and two secondary output ports. Its model is based on the [[Glossary_of_Generic_Analog_Devices#Ideal_Transformer | Ideal Transformer]], and the relationship between its primary and secondary voltages is given by:

<math> \frac{v_P}{v_{S1}} = \frac{v_P}{v_{S2}} = n </math>

where vP is the primary voltage, vS1 is measured between the top secondary pin S1 and the center tap pin, and vS2 is measured between the center tap pin and the bottom secondary pin S2. The red dots show the polarity of the windings on each side. This model has one parameter: ratio = n = NP/NS1 = NP/NS2, which represents the primary-to-secondary (half-winding) turns ratio.

==Ideal Comparator Block==

[[File:GL51.png]]

This block is an ideal two-signal voltage comparator with a default unity gain. It has a binary output that takes a value of 0V if vpos < vneg and takes a value of 1V if vpos > vneg. If vpos = vneg, the output voltage is 0.5V.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|gain||comparator gain||-||1.0||
|-
|}

==Ideal Delay Block==

[[File:GL44.png]]

This model is an ideal signal delay block based on an ideal delay line model.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|delay||time delay||sec||1u||
|-
|}

==Ideal Diode==

[[File:GK106.png]]

This 2-pin device is a very basic and primitive model of a diode as a rectifier or switch. When the voltage across the device's terminals is positive, it acts as a short circuit. When the voltage across the device's terminals is negative, it acts as an open circuit.

Parameters:

None

==Ideal Full-Wave Rectifier Block==

[[File:GL47.png]]

This block rectifies an input signal at both positive and negative cycles with a default unity gain.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|gain||rectifier gain||-||1.0||
|-
|}

==Ideal Gyrator Block==

[[File:GL48.png]]

An ideal gyrator is a linear two-port device which couples the current on one port to the voltage on the other and vice versa. The instantaneous voltages and currents instantaneous are related by:

:<math>v_{out}(t) = R \cdot i_{in}(t) </math>

:<math>v_{in}(t) = - R \cdot i_{out}(t) </math>

The ideal gyrator acts as an impedance inverter.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|r||gyration resistance||Ω||1.0||
|-
|}

==Ideal Half-Wave Rectifier Block==

[[File:GL46.png]]

This block rectifies an input signal at positive cycles with a default unity gain. Its output at negative cycles is zero.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|gain||rectifier gain||-||1.0||
|-
|}

==Ideal Operational Amplifier (Op-Amp)==

[[File:GK105.png]]

This is a very basic and primitive model of an operational amplifier. It has only one parameter, open loop gain with a default value of 50,000, which is adequate for most cases. The ideal Op-Amp device doesn't require any DC bias voltages.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|A||open loop gain||-||50,000||
|-
|}

==Ideal Phase Shifter Block==

[[File:GL45.png]]

This model is an ideal signal phase shifter block based on an ideal transmission line segment model. It is frequency-dependent and the signal phase shift is accurate only around the specified center frequency.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|phi||phase shift||deg||90||must be positive
|-
|fo||center frequency||Hz||1Meg||
|-
|}

==Ideal Polarity Detector Block==

[[File:GL66.png]]

This 3-pin device measures the difference signal Δv = vpos - vneg and produces a binary output ±A according to the sign of Δv, where A is a user defined amplitude.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|MaxVal||output amplitude||V||1||
|-
|}

==Ideal Splitter Block==

[[File:GL41.png]]

This model is an ideal signal splitter block with a default one-half split ratio. It splits the input signal by a ratio of k:(1-k).

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|k||split ratio||-||0.5||
|-
|}

==Ideal Transformer==

[[File:XFMR1.png]]

The ideal transformer is a four-pin two-port device with the following relationship between the voltages and currents at its primary and secondary ports:

<math> \frac{v_P}{v_S} = - \frac{i_S}{i_P} = \frac{N_P}{N_S} = n </math>

where vP, iP, NP are the primary voltage, current and number of turns, respectively, and vS, iS, NS are the secondary voltage, current and number of turns, respectively. The red dots show the polarity of the windings on each side. This model has one parameter: ratio = n = NP/NS, which represents the primary-to-secondary turns ratio. Note that the ideal transformer model is defined based on controlled sources and does not involve any magnetic physical parameters as opposed to mutual inductors or ferrite core transformer.

== Impulse Generator ==

[[File:GL19.png]]

This is a voltage source that generates a periodic impulse train with oscillating between zero and a user defined maximum voltage level.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|T||impulse period||sec||1u||required
|-
|duty_cycle||impulse duty cycle||-||0.01||required
|-
|max_val||maximum output voltage level||V||1||
|-
|delay||delay time||sec||0||
|-
|}

==Inductance Meter==

[[File:G37.png]]

The Inductance Meter measures the total inductance between a circuit node and the ground. The input pin of the device is connected to the measurement node. The output voltage of the device is then a scaled value equal to the total inductance seen on its input multiplied by the gain parameter. This model is primarily intended as a building block for other models which must sense an inductance value and alter their behavior based upon it. Care must be exercised when connecting an Inductance Meter to the inductors of a circuit. This is due to the fact that inductors are treated by SPICE as current sources. This can cause a problem when an inductor is connected in series with a current source, or in series with a voltmeter, or in series with another inductor.

Model Identifier: lmeter

Netlist Format:

A<device_name> <in_pin> <out_pin> <model_name>

.model <model_name> imeter {<gain = value>}

Example:

A1 1 2 inductance_meter

.model inductance_meter lmeter gain = 1

Parameters:

The only parameter is the gain with a default value of 1.0.

==Inductive Coupler Block==

[[File:GK99.png]]

The Inductive Coupler Block couples any two existing inductors. This block doesn't have any pins because it doesn't actually represent inductors, only the coupling between them. This is useful if you want to
couple two inductors that are in different parts of the circuit, or if you want to couple more than two inductors together. In the latter case, use more than one of these, with each one coupling a pair of inductors.

The standard parameters are Inductor1, Inductor2, and k. Inductor1 is the name of first inductor, Inductor2 is the name of the second inductor, and k is the coefficient of coupling, 0 < k ≤ 1.

==Inductive Coupling (XSPICE)==

[[File:G41.png]]

This function is a conceptual model which is used as a building block to create a wide variety of inductive and magnetic circuit models. This function is normally used in
conjunction with the “core” model, but it can also be used with resistors, hysteresis blocks, etc. to build up systems which mock the behavior of linear and nonlinear components.
The lcouple takes as an input (on the “l” port) a current. This current value is multiplied by the num_turns value, N, to produce an output value (a voltage value which appears on the
mmf_out port). The mmf_out acts similar to a magnetomotive force in a magnetic circuit;
when the lcouple is connected to the “core” model, or to some other resistive device, a current will flow. This current value (which is modulated by whatever the lcouple is
connected to) is then used by the lcouple to calculate a voltage “seen” at the “l” port. The voltage is a function of the derivative with respect to time of the current value seen at mmf_out.

The most common use for lcouple will be as a building block in the construction of transformer models. To create a transformer with a single input and a single output, you
would require two lcouple models plus one “core” model.

Example:

A1 (1 0) (2 3) lcouple1

.model lcouple1 lcouple ( num_turns = 10 )

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|num_turns||number of turns||-||1||required
|-
|}

==Inductor==

[[File:GK121.png]]

Inductors are used to store magnetic energy. An inductor's ability to counteract current changes passing through it is called its inductance (L), which is
measured in Henrys. In a (steady-state) DC analysis, the inductor acts like a short circuit. It is indeed treated as a current source, which can be problematic if an inductor is connected in series with a current source, or in series with a voltmeter, or in series with another inductor. The resistor may be of negligible value or one that accounts for the coil resistance of the inductor. In AC and transient analyses, the inductor develops a voltage across it in response to the changing magnetic
flux within its coil.

An inductor's transient behavior is described by the equation:

v(t) = L*(di(t)/dt)

The inductor's initial condition is optional. It is the initial value of the inductor current in Amperes that flows from node N+ through the inductor to node N-. The only time that the initial current matters is when the simulator performs a transient analysis, and the "Use Initial Conditions" checkbox is checked.

An inductor's AC behavior is described by the equation:

v = j ω * L * i

All inductor names must begin with L.

Netlist Format:

L<device_name> <N+> <N-> <value>

Example:

L1 1 2 10u

==Inductor with Ferrite Core==

[[File:GK94.png]]

This 2-pin device models a physical inductor with a magnetic ferrite core. Its model is based on XSPICE's magnetic core and inductive coupling models. Unlike the standard inductor device, you do not specify an inductance value for the inductor with ferrite core. Rather, you specify physical parameters like cross sectional area, core length and number of turns. The physical model of the magnetic device is defined by two vectors: magnetic field intensity H in A/m and magnetic flux density B (also known as magnetic induction) in Tesla. The default array values are:

H_array = [-250 -100 -50 -37.5 -25 -12.5 0 12.5 25 37.5 50 100 250]

B_array = [-0.375 -0.36 -0.32 -0.29 -0.24 -0.15 0 0.15 0.24 0.29 0.32 0.36 0.375]

To change the value of H/B arrays, open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|n_turns||number of turns||-||100||required
|-
|area||cross-sectional area||m2||1e-5||
|-
|length||core length||m||0.01||
|-
|}

== Insulated Gate Bipolar Transistor (IGBT)==

[[File:GK111.png]]

This is a 3-pin parameterized Insulated Gate Bipolar Transistor (IGBT) device with three pins: Collector(C), Gate (G), and Emitter (E). It is primarily used as a fast electronic switch. The IGBT combines the simple gate-drive characteristics of MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors. The device's model consists of an isolated gate FET for the control input, and a PNP bipolar power transistor as a switch. To further modify the internal device models, open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|cap||parasitic capacitance||F||1n||
|-
|rg||gate resistance||Ohms||5||
|-
|re||emitter resistance||Ohms||0.05||
|-
|bf||pnp transistor forward beta||-||1||
|-
|vto||MOSFET threshold voltage||V||5||
|-
|kt||MOSFET transconductance||-||2.99||
|-
|cgso||MOSFET voltage gate-source overlap capacitance||F||5u||
|-
|nd||diode emission coefficient||-||50||
|-
|cjo||diode junction capacitance||F||1n||
|-
|}

== Integer Modulo Block ==

[[File:GL58.png]]

This 3-pin device requires a voltage with an integer value on its second input pin. It produces a voltage equal to vin1 % vin2 and sends it to the output with a default unity gain.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|gain||gain||-||1.0||
|-
|}

==Integrator Block==

[[File:G32.png]]

The Integrator Gain and input offset parameters are also included to allow for tailoring of the required
signa. Output upper and lower limits are also included to prevent convergence errors resulting from excessively
large output values. Note that these limits specify integrator behavior similar to that found in an operational
amplifier-based integration stage, in that once a limit is reached, additional storage does not occur.
Thus the input of a negative value to an integrator which is currently driving at the out_upper_limit
level will immediately cause a drop in the output, regardless of how long the integrator was previously
summing positive inputs. The incremental value of output below the output_upper_limit and above the output_lower_limit
at which smoothing begins is specified via the limit_range parameter. In AC analysis, the value returned
is equal to the gain divided by the radian frequency of analysis.

Note that truncation error checking is included in the \93int\94 block. This should provide for a more accurate
simulation for the time integration function, since the model will inherently request smaller time increments
between simulation points if truncation errors would otherwise be excessive.

Model Identifier: int

Netlist Format:

A<device_name> <in_pin> <out_pin> <model_name>

.model <model_name> int out_lower_limit = <value> out_upper_limit = <value> {<param1 = value> < param2 = value> ...}

Example:

A1 1 2 integrator_block

.model integrator_block int out_lower_limit = -1t out_upper_limit = 1t

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|gain||gain||-||1.0||
|-
|in_offset||output offset||V||0.0||
|-
|out_lower_limit||output lower limit||V||-1t||required
|-
|out_upper_limit||output upper limit||V||1t||required
|-
|limit_range||upper and lower limit smoothing range||-||1.0e-6||
|-
|out_ic||output initial condition||V||0.0||
|-
|}

==Interactive Switch==

[[File:GK75.png]]

This device is an interactive switch that can be closed or opened either directly from the Schematic Editor by clicking on its symbol or from the Instrument Panel.

==Interdigital Capacitor==
[[File:G97.png]]

This is a four-pin, two-port device that models a planar interdigital capacitor.

Model Identifier: interdigital

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|w||finger strip width||mm||0.1||
|-
|s||finger strip spacing||mm||0.1||
|-
|N||number of fingers||-||5||
|-
|l||capacitor length||mm||1.0||
|-
|h||substrate thickness||mm||1.6||
|-
|er||substrate relative permittivity||-||2.2||
|-
|}

==Inverted Microstrip Line==
[[File:GK62.png]]

This is a four-pin, two-port device that models an inverted microstrip line segment on a single-layer dielectric slab/substrate placed at a specified height above a ground plane.

Model Identifier: microstrip-inverted

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|w||microstrip width||mm||4.8||
|-
|h||substrate thickness||mm||1.6||
|-
|er||substrate relative permittivity||-||2.2||
|-
|b||microstrip height above ground||mm||1.6||
|-
|len||microstrip length||m||10||
|-
|}

==Junction Field Effect Transistor (JFET)==

[[File:G12.png]]

The JFET is the simplest transistor device and has three pins: gate, drain and source. The JFET defaults are based on the Shichman and Hodges FET model. This is a square-law device because of the expression relating the drain current to the gate-to-source voltage:
Idrain=*(VGS-Vthreshold)2. In real JFETs, near the saturation point, the drain currents vary with the drain voltages. This can be modeled by the following formula: Idrain=*(VGS-VTO)2*(1+*VDS), which yields an increasing
drain current for increasing values of VDS.

The gate-to-source and gate-to-drain junctions each have a nonlinear capacitor. The zero-bias capacitance value is selected for each junction.

The standard device parameters are AREA, OFF, IC, and T. They are described below:

{| class="wikitable"
|-
|AREA||area factor (optional) (If not specified, the default value is 1.0.)
|-
|OFF||initial condition for the DC analysis (optional)
|-
|IC||initial condition (optional) (Used when a transient analysis is desired, which starts from other than the quiescent operating point.)
|-
|T||operating temperature of the device (optional)
|-
|}

The process model parameters are listed in the following table:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!EXAMPLE
|-
|VTO||threshold voltage||V||-2||-2
|-
|BETA||transconductance parameter||A/V2||1.0e-4||1.0e-3
|-
|LAMBDA||channel-length modulation parameter||1/V||0||1.0e-4
|-
|RD||drain ohmic resistance||ohms||0||100
|-
|RS||source ohmic resistance||ohms||0||100
|-
|CGS||zero-bias G-S junction capacitance||F||0||5pF
|-
|CGD||zero-bias G-D junction capacitance||F||0||1pF
|-
|PB||gate junction potential||V||1||0.6
|-
|IS||gate junction saturation current||A||1.0e-14||1.0e-14
|-
|B||doping tail parameter|| ||1||1.1
|-
|KF||flicker-noise coefficient|| ||0||
|-
|AF||flicker-noise exponent|| ||1||
|-
|FC||coefficient for forward-bias depletion capacitance formula|| ||0.5||
|-
|TNOM||parameter measurement temperature||deg. C||27||50
|-
|}

== Light Emitting Diode (LED) ==

[[File:GK114.png]]

This is a two-pin parameterized diode device that emits light of a certain wavelength when it is forward-biased.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|rs||ohmic resistance||Ohms||10||
|-
|vj||junction potential||V||0.6||
|-
|cjo||zero bias junction capacitance||F||10p||
|-
|tt||transit time||sec||0.1n||
|-
|}

==Linear Current-Controlled Current Source (CCCS)==

[[File:G2.png]]

The CCCS is a current source whose current is directly proportional to the current across a controlling Ammeter or a voltage source. There are two versions: two-terminal and four-terminal. For the two-terminal device, you must specify the name of the controlling Ammeter or voltage source, as well as the current gain, which has a default value of one. The four-terminal device already provides nodes for a controlling ammeter, and you just specify the current gain.

Model Identifier: cccs

Netlist Format:

F<device_name> <N+> <N-> <controlling_device_name> <value>

Example:

F1 1 0 V1 1.0

==Linear Current-Controlled Voltage Source (CCVS)==

[[File:G4.png]]

The CCVS is a voltage source whose voltage is directly proportional to the current through a controlling ammeter or a voltage source. There are two versions: two-terminal and four-terminal. For the two-terminal device, you must specify the name of the controlling Ammeter or voltage source, as well as the trans-resistance gain, which has a default value of one. The four-terminal device already provides nodes for a controlling ammeter, and you just specify the trans-resistance gain.

Model Identifier: ccvs

Netlist Format:

H<device_name> <N+> <N-> <controlling_device_name> <value>

Example:

H1 1 0 V1 1.0

==Linear Voltage-Controlled Current Source (VCCS)==

[[File:G3.png]]

The VCCS is a current source whose current is directly proportional to the voltage across a controlling voltmeter or the voltage between two circuit nodes. There are two versions: two-terminal and four-terminal. For the two-terminal device, you must specify the name of the controlling voltmeter or the two controlling nodes, as well as the trans-conductance gain, which has a default value of one. The four-terminal device already provides nodes for a controlling voltmeter, and you just specify the trans-conductance gain.

Model Identifier: vccs

Netlist Format:

G<device_name> <N+> <N-> <NC+> <NC-> <value>

Example:

G1 1 0 2 0 1.0

==Linear Voltage-Controlled Voltage Source (VCVS)==

[[File:G1.png]]

The VCVS is a voltage source whose voltage is directly proportional to the voltage across a controlling voltmeter of the voltage between two circuit nodes. There are two versions: two-terminal and four-terminal. For the two-terminal device, you must specify the name of the controlling voltmeter or the two controlling nodes, as well as the voltage gain, which has a default value of one. The four-terminal device already provides nodes for a controlling voltmeter, and you just specify the voltage gain.

Model Identifier: vcvs

Netlist Format:

E<device_name> <N+> <N-> <NC+> <NC-> <value>

Example:

E1 1 0 2 0 1.0

==Lossless Transmission Line==

[[File:G21.png]]

The lossless transmission line is a four-pin two-port device that models only one propagating mode of an ideal transmission line. When using this SPICE model, should all four nodes of the actual circuit be distinct, two modes may be activated, and this device would be insufficient for that purpose. To circumvent this potential problem, two transmission line devices would be required. Due to the implementation details, you may produce more accurate simulation results with a lossy transmission line device with zero loss.

Optional initial condition parameters are the voltage and current at each of the transmission line ports.

The standard device parameters are Z0, TD, F, NL, IC, described below:

{| class="wikitable"
|-
|Z0||characteristic impedance
|-
|TD||transmission delay
|-
|F||frequency
|-
|NL||normalized electrical length of the transmission line with respect to the wavelength in the line at frequency F. (If F is specified, but NL is not, the default is 0.25.)
|-
|IC||initial condition (Specifies the voltage and current at each of the transmission line ports.)
|-
|}

==Lossy Transmission Line==

[[File:G22.png]]

The lossy transmission line is a four-pin two-port convolution model for uniform constant-parameter distributed lines. MNAME is the process model name, which
includes a set of pre-specified options as described below.

The device model [[parameters]] are listed in the following table:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!EXAMPLE
|-
|R||resistance /length||Ohm /m||0.0||0.2
|-
|L||inductance/length||henrys/m||0.0||9.13e-9
|-
|C||capacitance/length||farads/m||0.0||3.65e-12
|-
|LEN||length of line||m||none||1.0
|-
|LININTERP||use linear interpolation||flag||not set||set
|-
|QUADINTERP||use quadratic interpolation||flag||not set||set
|-
|MIXEDINTERP||use linear when quadratic seems bad||flag||not set||set
|-
|COMPACTREL||special reltol for straight line checking||flag||RETOL||1.0e-3
|-
|COMPACTABS||special abstol for straight line checking||flag||ABSTOL||1.0e-9
|-
|NOCONTROL||don't do complex time control||flag||not set||set
|-
|STEPLIMIT||always limit timestep to 0.8*(delay of line)|| || ||
|-
|NOSTEPLIMIT||don't always limit timestep to 0.8*(delay of line)||flag||not set||set
|-
|TRUNCNR||use Newton-Raphson method for timestep calculation in LTRAtrunc||flag||not set||set
|-
|TRUNCDONTCUT||don't limit timestep to keep impulse-response errors low||flag||not set||set
|-
|}


The RLC (uniform transmission line with series loss only), RC (uniform RC line), LC (lossless transmission
line), and RG (distributed series resistance and parallel conductance only) lines have been implemented.
The length (LEN) must be given. COMPACTREL and COMPACTABS control the compaction of past history values
used in convolution. Larger values for these lower accuracy but improve speed. These are used with the
TRYTOCOMPACT option. 

==Magnetic Core (XSPICE)==

[[File:G42.png]]

This device is used as a building block to create a wide variety of inductive and magnetic circuit models. It is almost always to be used in conjunction with the "lcouple" model to build up systems which simulate the behavior of linear and nonlinear magnetic components. There are two fundamental modes of operation for the core model. These are the "PWL" mode (which is the default and most
likely to be of use to you) and the "Hysteresis" mode.

PWL Mode (mode = 1)

In the PWL mode, the model takes a voltage as input which it treats as a magnetomotive force (mmf) value. This value is divided by the total effective length of the core to produce a value for the Magnetic Field Intensity, H, which is then used to find the corresponding Flux Density, B, using the piecewise linear relationship described by you in the H_array / B_array coordinate pairs. B is then multiplied by the cross-sectional area of the core to find the Flux value, which is output as a current. The pertinent mathematical equations are:

H = mmf / L, where L = Length (in apmere-turns/meter)

B = f(H)

Φ = B * A, where A = Area

The B value is derived from a piecewise linear transfer function described to the model by the H_array and B_array coordinate pairs. This transfer function does not include hysteretic effects; for that, you would need to substitute a HYST model for the core. The magnetic flux value Φ in turn is used by the "lcouple"
code model to obtain a value for the voltage reflected back across its terminals to the driving electrical circuit.

Hysteresis Mode (mode = 2)

In the Hysteresis mode, the model takes a voltage as input which it treats as a magnetomotive force (mmf)
value. This value is used as input to the equivalent of a hysteresis code model block. The parameters
defining the input low and high values, the output low and high values, and the amount of hysteresis are
as in that model. The output from this mode, as in PWL mode, is a current value which is seen across the magnetic core port.

One final note to be made about the two core models is that certain parameters are specific to one or the other. In particular, the in_low, in_high, out_lower_limit, out_upper_limit, and hysteresis parameters are not available in PWL mode. Likewise, the H_array, B_array, area, ad length values are unavailable
in Hysteresis mode. The input_domain and fraction parameters are common to both modes (though their behavior is somewhat different; for explanation of the input_domain and fraction values for the Hysteresis mode, please refer to the Hysteresis Block discussion.

Model Identifier: core

Netlist Format:

A<device_name> <mc1 _pin> <mc2_pin> <model_name>

.model <model_name> core area = <value> length = <value> H_array = [<value1> <value2>] B_array = [<value1> <value2>]
{<param1 = value> < param2 = value> ...}

Example:

A1 1 2 core

.model core core area = 1 length = 1 H_array = [0 1] B_array = [0 1]

Parameters:

{| class="wikitable"
|-
!Name!!Description!!Default!!Notes
|-
|H_array||magnetic field array||[0 1]||required
|-
|B_array||flux density array||[0 1]||required
|-
|Area||cross-sectional area||1||required
|-
|Length||core length||1||required
|-
|Input_domain||input smoothing domain||0.01||
|-
|Fraction||smoothing fraction/abs switch||True||
|-
|Mode||mode switch (1=pwl, 2=hyst)||1||
|-
|In_low||input low value||0.0||
|-
|In_high||input high value||1.0||
|-
|Hyst||hysteresis||0.1||
|-
|Out_lower_limit||output lower limit||0.0||
|-
|Out_upper_limit||output upper limit||1.0||
|-
|}

==Marker==

[[File:G16.png]]

The marker serves several purposes:

* It can appear as a default plot in simulations if the "Voltage Probe" box is checked.

* It can be used to set the initial voltage or voltage guess at the node it is connected to.

* It can be used as a port for a subcircuit when you choose the checkbox labeled "Use as Subcircuit Port" is checked.

* It can be used to explicitly set a node number in place of the arbitrarily assigned node number by the program. In this case, make sure the "Set Node Index" box is checked. Otherwise, it will act as just a voltage probe.

* It can be used to connect different parts of a circuit in place of wires. To use markers as virtual connectors, place them at points where wires would otherwise connect. Then set the Part Title of the two (or more) markers to the same name, and they will act as a single circuit node.

==MESFET==

[[File:G14.png]]

The MESFET is a Schottky-barrier gate FET with six times greater electron mobility than silicon. MESFETs are important devices for creating high frequency circuits. They function by creating a potential barrier between the gate and the channel when the metal gate
contacts the gallium-arsenide substrate. Electron velocity saturates for fields approximately ten times lower than with silicon. The Curtice model includes linear and saturated operation.

The standard parameters are AREA, OFF, IC, and T. They are described below:

{| class="wikitable"
|-
|AREA||area factor (optional) (If not specified, the default value is 1.0.)
|-
|OFF||initial condition for the DC analysis (optional)
|-
|IC||initial condition (optional) (Used when a transient analysis is desired, which starts from other than the quiescent operating point.)
|-
|T||operating temperature of the device (optional)
|-
|}

All the MESFET process model parameters are described in the following table:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!EXAMPLE
|-
|VTO||pinch-off voltage||V||-2||-2
|-
|BETA||transconductance parameter||A/V2||1.0e-4||1.0e-3
|-
|B||doping tail extending parameter||1/V||0.3||0.3
|-
|ALPHA||saturation voltage parameter||1/V||2||2
|-
|LAMBDA||channel-length modulation parameter||1/V||0||1.0e-4
|-
|RD||drain ohmic resistance||Ohm||0||100
|-
|RS||source ohmic resistance||Ohm||0||100
|-
|CGS||zero-bias G-S junction capacitance||F||0||5pF
|-
|CGD||zero-bias G-D junction capacitance||F||0||1pF
|-
|PB||gate junction potential||V||1||0.6
|-
|KF||flicker noise coefficient||-||0||
|-
|AF||flicker noise exponent||-||1||
|-
|FC||coefficient for forward-bias depletion capacitance formula||-||0.5||
|-
|}

==MOSFET==

[[File:G13.png]]

The MOSFET is an active device that has up to 4 pins. The three standard pins are gate, drain, and source. These are given in the default symbol. The bulk node, which is grounded by default, is the fourth pin. The MOSFET with the bulk is named mos_n_lvl1_4 (the lvl1 is for level 1, the n for nmos, and the 4 for 4 pins.)

The standard [[parameters]] are L, W, AD, AS, PD, PS, NRD, NRS, OFF, IC, and T. They are described below:

{| class="wikitable"
|-
|L||channel length, in meters
|-
|W||channel width, in meters
|-
|AD,AS||areas of the drain and source diffusions, in meters2
|-
|PD,PS||perimeters of drain and source junctions, in meters(They default to 0.0.)
|-
|NRD,NRS||equivalent number of squares of the drain and source diffusions (These values multiply the sheet resistance for an accurate representation of parasitic series drain and source resistance of each transistor. The default value is 1.0.)
|-
|OFF||initial condition for the DC analysis (optional)
|-
|IC||initial condition (optional) (Used when a transient analysis is desired, which starts from other than the quiescent operating point.)
|-
|T||operating temperature of the device (optional)
|-
|}

There are five different default models: square-law I-V characteristic, analytical, semi-empirical, and BSIM and BSIM2 (Berkeley Short-channel IGFET Model), which include second-order effects such as channel-length
modulation, subthreshold conduction, scattering-limited velocity saturation, small-size effects, and charge-controlled capacitance. The process parameter LEVEL specifies which of the models is chosen as indicated below:

{| class="wikitable"
|-
|LEVEL 1||Schichman-Hodges
|-
|LEVEL 2||MOS2
|-
|LEVEL 3||MOS3
|-
|LEVEL 4||BSIM
|-
|LEVEL 5||BSIM2
|-
|LEVEL 6||MOS6
|-
|}

The process model [[parameters]] for levels 1,2,3, and 6 are listed in the following table:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!EXAMPLE
|-
|LEVEL||model index|| ||1||
|-
|VTO||zero-bias threshold voltage||V||0.0||1.0
|-
|KP||transconductance parameter||A/V2||2e-5||3.1e-5
|-
|GAMMA||bulk threshold parameter||V1/2||0.0||0.37
|-
|PHI||surface potential||V||0.6||0.65
|-
|LAMBDA||channel-length modulation (level 1 & 2 only)||1/V||0.0||0.02
|-
|RD||drain ohmic resistance||ohms||0.0||1.0
|-
|RS||source ohmic resistance||ohms||0.0||1.0
|-
|CBD||zero-bias B-D junction capacitance||F||0.0||20fF
|-
|CBS||zero-bias B-S junction capacitance||F||0.0||20fF
|-
|IS||bulk junction saturation current||A||1.0e-14||1.0e-15
|-
|PB||bulk junction potential||V||0.8||0.87
|-
|CGSO||gate-source overlap capacitance per meter channel width||F/m||0.0||4.0e-11
|-
|CGDO||gate-drain overlap capacitance per meter channel width||F/m||0.0||4.0e-11
|-
|CGBO||gate-bulk overlap capacitance per meter channel length||F/m||0.0||2e-10
|-
|RSH||drain & source diffusion sheet resistance||ohm/area||0.0||10.0
|-
|CJ||zero-bias bulk junction bottom capacitance per meter2 junction area||F/m2||0.0||2e-4
|-
|MJ||bulk junction bottom grading coefficient|| ||0.5||0.5
|-
|CJSW||zero-bias bulk junction sidewall capacitance per meter junction perimeter||F/m||0.0||1.0e-9
|-
|MJSW||bulk junction sidewall grading coefficient|| ||0.5, 0.33 (level1), (level2,3)||
|-
|JS||bulk junction saturation current per meter2 of junction area||A/m2|| ||1.0e-8
|-
|TOX||oxide thickness||meter||1.0e-7||1.0e-7
|-
|NSUB||substrate doping||1/cm3||0.0||4.0e15
|-
|NSS||surface state density||1/cm2||0.0||1.0e10
|-
|NFS||fast surface state density||1/cm2||0.0||1.0e10
|-
|TPG||type gate material(+1 if opp. substrate, 0 if A1 gate, -1 if same as substrate)|| ||1.0||
|-
|XJ||metallurgical junction depth||meter||0.0||1
|-
|LD||lateral diffusion||meter||0.0||0.8
|-
|UO||surface mobility||cm2/Vs||600||700
|-
|UCRIT||critical field for mobility degradation (level2 only)||V/cm||1.0e4||1.0e4
|-
|UEXP||critical field exponent in mobility degradation (level2 only)|| ||0.0||0.1
|-
|UTRA||transverse field coefficient (deleted for level2)|| ||0.0||0.3
|-
|VMAX||maximum drift velocity of carriers||m/s||0.0||5.0e4
|-
|NEFF||total channel-charge (fixed and mobile) coefficient (level2 only)|| ||1.0||5.0
|-
|KF||flicker noise coefficient|| ||0.0||1.0e-26
|-
|AF||flicker noise exponent|| ||1.0||1.2
|-
|FC||coefficient for forward bias depletion capacitance formula|| ||0.5||
|-
|DELTA||width effect on threshold voltage (level2,3)|| ||0.0||1.0
|-
|THETA||mobility modulation (level3 only)||1/V||0.0||0.1
|-
|ETA||static feedback (level3 only)|| ||0.0||1.0
|-
|KAPPA||saturation field factor (level3 only)|| ||0.2||0.5
|-
|TNOM||parameter measurement temperature||deg. C||27||50
|-
|}

The BSIM model has no default parameters, and leaving one out is considered an error. The additional process model parameters for level 4 and 5 models are listed in the following table:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS
|-
|VFB||flat-band voltage||V
|-
|PHI||surface inversion potential||V
|-
|K1||body effect coefficient||V1/2
|-
|K2||drain/source depletion charge-sharing coefficient||
|-
|ETA||zero-bias drain-induced barrier-lowering coefficient||
|-
|MUZ||zero-bias mobility||cm2/V-s
|-
|DL||shortening of channel||m
|-
|DW||narrowing of channel||m
|-
|U0||zero-bias transverse-field mobility degradation coefficient||V-1
|-
|U1||zero-bias velocity saturation coefficient||m/V
|-
|X2MZ||sens. of mobility to substrate bias at Vds=0||cm2/V2-s
|-
|X2E||sens. of drain-induced barrier lowering effect to substrate bias||V-1
|-
|X3E||sens. of drain-induced barrier lowering effect to drain bias at Vds= Vdd||V-1
|-
|X2U0||sens. of transverse field mobility degradation to substrate bias||V-2
|-
|X2U1||sens. of velocity saturation effect to substrate bias||mV-2
|-
|MUS||mobility at zero substrate bias and at Vds= Vdd||cm2/V2-s
|-
|X2MS||sens. of mobility to substrate bias at Vds= Vdd||cm2/V2-s
|-
|X3MS||sens. of mobility to drain bias at Vds= Vdd||cm2/V2-s
|-
|X3U1||sens. of velocity saturation effect on drain bias at Vds= Vdd||mV-2
|-
|TOX||gate oxide thickness||m
|-
|TEMP||temperature at which [[parameters]] were measured||deg. C
|-
|VDD||measurement bias range||V
|-
|CGDO||gate-drain overlap capacitance per meter channel width||F/m
|-
|CGSO||gate-source overlap capacitance per meter channel width||F/m
|-
|CGBO||gate-bulk overlap capacitance per meter channel length||F/m
|-
|XPART||gate-oxide capacitance-charge model flag||
|-
|N0||zero-bias subthreshold slope coefficient||
|-
|NB||sens. of subthreshold slope to substrate bias||
|-
|ND||sens. of subthreshold slope to drain bias||
|-
|RSH||drain and source diffusion sheet resistance||ohms/area
|-
|JS||source drain junction current density||A/m2
|-
|PB||built-in potential of source drain junction||V
|-
|MJ||grading coefficient of source drain junction||
|-
|PBSW||built-in potential of source drain junction sidewall||V
|-
|MJSW||grading coefficient of source drain junction sidewall||
|-
|CJ||source drain junction capacitance per unit area||F/ m2
|-
|CJSW||source drain junction sidewall capacitance per unit length||F/m
|-
|WDF||source drain junction default width||m
|-
|DELL||source drain junction length reduction||m
|-
|}

XPART=0 selects a 40/60 drain/source charge partition; XPART=1 selects a 0/100 partition.

==Mutual Inductors==

[[File:GK100.png]]

The mutual inductors device is a pair of inductors that are coupled to each other. L1 and L2 are the names of two inductors. You have to specify the inductance of inductor L1, the inductance of inductor L2, the initial current through each, and the coupling coefficient k, 0 ≤ k ≤ 1. The mutual inductance M expressed in units of H can be calculated using the following definition:

<math> k = \frac{M}{\sqrt{L_1 L_2}} </math>

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|inductance1||inductance of inductor 1||H||1||
|-
|inductance2||inductance of inductor 2||H||1||
|-
|ic1||initial current through inductor 1||A||0||
|-
|ic2||initial current through inductor 2||A||0||
|-
|k||coefficient of coupling||-||1.0||
|-
|}

==Non-Ideal Current Transformer==

[[File:GK104.png]]

This 8-pin device models a non-ideal lossy current transformer. Its model consists of an ideal transformer with more secondary turns than primary turns along with a number of parasitic elements. The interior pins with red wires give you direct access to the primary and secondary pins of the internal ideal transformer. on each side of the internal ideal transformer, there is a series leakage inductance LLk, followed by a shunt winding capacitance CWk and a series winding resistance RWk, which connects to the exterior positive pin on that side. The inter-winding resistance R12 is connected across the negative pins of the primary and secondary of the ideal transformer model. In a more complete model, an external inductor LM can be connected between the positive and negative interior pins of either the primary or secondary to account for the effects of the magnetization inductance.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|ratio||secondary-to-primary turns ratio||-||2||required
|-
|rw1||primary winding resistance||Ohms||0.1||
|-
|rw2||secondary winding resistance||Ohms||0.1||
|-
|ll1||primary leakage inductance||H||1m||
|-
|ll2||secondary leakage inductance||H||1m||
|-
|cw1||primary winding capacitance||F||1p||
|-
|cw2||secondary winding capacitance||F||1p||
|-
|r12||inter-winding resistance||Ohms||10Meg||
|-
|}

==Non-Ideal Diode==

[[File:G9.png]]

This 2-pin device is a basic simplified model of a diode as a rectifier or switch. When forward-biased, it acts as a low-valued voltage source. When reverse-biased, it acts as an open circuit until the reverse voltage exceeds the specified breakdown voltage. Then it acts as a high-valued voltage source of the reverse polarity.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|vf||forward drop voltage||V||0.5||required
|-
|vr||reverse breakdown voltage||V||100||required
|-
|}

==Non-Ideal Voltage Transformer==

[[File:GK103.png]]

This 8-pin device models a non-ideal lossy voltage transformer. Its model consists of an ideal transformer with more primary turns than secondary turns along with a number of parasitic elements. The interior pins with red wires give you direct access to the primary and secondary pins of the internal ideal transformer. There are series combinations of a winding resistance RWk and a leakage inductance LLk on the primary and secondary sides. These are connected between the positive interior and exterior pins on each side. There are also two shunt branches at the inputs of the primary and secondary sides (connected between the positive and negative exterior pins), each consisting of a distributed turn-to-turn winding resistance RDCk in series with a distributed turn-to-turn winding capacitance CWk. The inter-winding capacitance CWW12 is connected across the positive pins of the primary and secondary of the ideal transformer model. In a more complete model, an external inductor LM can be connected between the positive and negative interior pins of either the primary or secondary to account for the effects of the magnetization inductance.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|ratio||primary-to-secondary turns ratio||-||2||required
|-
|rw1||primary winding resistance||Ohms||0.1||
|-
|rw2||secondary winding resistance||Ohms||0.1||
|-
|ll1||primary winding leakage inductance||H||1m||
|-
|ll2||secondary winding leakage inductance||H||1m||
|-
|rdc1||primary distributed turn-to-turn winding resistance||Ohms||1u||
|-
|cw1||primary distributed turn-to-turn winding capacitance||F||1p||
|-
|rdc2||secondary distributed turn-to-turn winding resistance||Ohms||1u||
|-
|cw2||secondary distributed turn-to-turn winding capacitance||F||1p||
|-
|cww12||inter-winding capacitance||F||1p||
|-
|}

==Nonlinear Capacitor==

[[File:GK89.png]]

The nonlinear capacitor model allows the capacitor to be described by an arbitrary relationship between the capacitor's charge Q and the voltage V across the capacitor. In other words, Q = f(V). The nonlinear capacitance is then defined as C(V) = dQ/dV. You need to define the charge Q by a mathematical expression in the voltage V. You have to open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text. Enter any mathematical expression in the variable "v(pos,neg)" standing for the terminal voltage. The default expression is:

{ C_DEF } * v(pos,neg)

which implies a linear capacitor, where Q = CDEF V. Therefore, C = C(V) = dQ/dV = CDEF.

Another example is 1e-4*(v(pos,neg))^2.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|C_DEF||default capacitance||F||1||
|-
|}

==Nonlinear Conductor==

[[File:GK88.png]]

The nonlinear conductor model allows the conductor to be described by an arbitrary relationship between the conductor's current I and the voltage V across the conductor. In other words, I = f(V). The nonlinear conductance is then defined as G(V) = dI/dV. You need to define the current I by a mathematical expression in the voltage V. You have to open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text. Enter any mathematical expression in the variable "v(pos,neg)" standing for the terminal voltage. The default expression is:

{ G_DEF } * v(pos,neg)

which implies a linear conductor, where I = GDEF V. Therefore, G = G(V) = dI/dV = GDEF.

Another example is 1e-4*(v(pos,neg))^2.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|G_DEF||default capacitance||S||1||
|-
|}

==Nonlinear Dependent Sources==

[[File:G18.png]]

Nonlinear dependent (arbitrary) sources use an equation or mathematical expression to describe their behavior. One and only one of the two forms: V=<expr> or I=<expr> must be given.

Netlist Format:

B<device_name> v = <expression>

B<device_name> i = <expression>

Examples:

v = I(v1) + 3* I(v2)

I = v(i1) + 3* v(2) + 5 * v(3) ^2

The first example is a current-controlled voltage source. The v on the left side of the equation
indicates that it is a voltage source. I(v1) and I(v2) are the currents through voltage sources named v1 and v2, respectively.

The second example is a voltage-controlled current source. v(2) and v(3) represents the voltages at nodes 2 and 3, respectively, and v(i1) represents the voltage across a current source named i1.

The following mathematical functions defined for real variables can be used in the expressions:

abs(x), acos(x), acosh(x), asin(x), asinh(x), atan(x), atanh(x), cos(x), cosh(x), exp(x), ln(x), log(x), max(x,y), min(x,y), pwr(x,y), pwrs(x,y), sgn(x), sin(x), sinh(x), sqrt(x), tan(x), tanh(x), u(x), uramp(x).

The function "sgn" is the signum function and its value is 1 if the argument is positive or zero and -1 if the argument is negative.
The function "u(x)" is the unit step and "uramp(x)" is the integral of the unit step. The
unit step is one if its argument is greater than zero and zero if its argument is less than zero. The
ramp function (uramp) is 0 for argument values less than zero and equal to the argument for argument values
greater than zero.

The following operators are permissible: +, -, *, /, and ^.

The power functions have equivalent expressions: pwr(x,y) = x^y and pwrs(x,y) = sgn(x)*abs(x)^y.

Two constants can also be used in expressions: pi = 3.1415926 and e = 2.7182818.

There is a conditional function with the syntax IF(Condition, Expression1, Expression2). If "Condition" is met, then the return value of the function is Expression1; otherwise, it is Expression2. An example of this type of function is IF(v(1)>=0,1,-1), which is equivalent to sgn(v(1)).

To get time into an expression, integrate the current from a constant current source with a capacitor
and use the voltage across the capacitor.

Note: All the functions and expressions are case-insensitive.

==Nonlinear Inductor==

[[File:GK90.png]]

The nonlinear inductor model allows the inductor to be described by an arbitrary relationship between the inductor's magnetic flux Φ and the current I flowing through the inductor . In other words, Φ = f(I). The nonlinear inductance is then defined as L(I) = dΦ/dI. You need to define the flux Φ by a mathematical expression in the current I. You have to open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text. Enter any mathematical expression in the variable "i(vx)" standing for the device current. The default expression is:

{ L_DEF } * i(vx)

which implies a linear inductor, where Φ = LDEF I. Therefore, L = L(I) = dΦ/dI = LDEF.

Another example is 1e-4*(i(vx))^2.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|L_DEF||default inductance||H||1||
|-
|}

==Nonlinear Resistor==

[[File:GK87.png]]

The nonlinear resistor model allows the resistor to be described by an arbitrary relationship between the voltage V across the resistor and its current I. In other words, V = f(I). The nonlinear resistance is then defined as R(I) = dV/dI. You need to define the voltage V by a mathematical expression in the current I. You have to open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text. Enter any mathematical expression in the variable "i(vx)" standing for the device current. The default expression is:

{ R_DEF } * i(vx)

which implies a linear resistor, where V = RDEF I. Therefore, R = R(I) = dV/dI = RDEF.

Another example is 10*(i(vx))^2.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|R_DEF||default resistance||Ω||1||
|-
|}

==Operational Amplifier (Op-Amp)==

[[File:GK105.png]]

This three-pin device models a parameterized operational amplifier with a very high voltage gain, a very high input impedance and a very low output impedance. The behavioral model of the parameterized Op-Amp device is based on the algorithm found in the book Macromodeling with Spice,
authored by Connelly & Choi, published by Prentice Hall. The default parameters are those of the 741 Op-Amp. This device doesn't require external DC bias voltage sources. Its positive and negative DC bias voltages are specified as its parameters. Sometimes the simulation doesn't converge if there is no DC path from the output of the Op-Amp to the ground.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|r_in_dm||differential mode input resistance||Ohms||2Meg||
|-
|r_in_cm||common mode input resistance||Ohms||2G||
|-
|Avd0||differential mode DC gain||dB||106||
|-
|CMRR||common mode rejection ratio||dB||90||
|-
|r_out||output resistance||Ohms||75||
|-
|c_in||input capacitance||F||1.4p||
|-
|ios||input offset current||A||20n||
|-
|ib||input bias current||A||80n||
|-
|vio||input offset voltage||V||1m||
|-
|slew_pos||positive slew rate||V/s||0.5e6||
|-
|slew_neg||negative slew rate||V/s||0.5e6||
|-
|curr_src_max||maximum output source current||A||25m||
|-
|curr_sink_||maximum output sink current||A25m||
|-
|fp1||dominant pole frequency||Hz||5||
|-
|fp2||second pole frequency||Hz||2Meg||
|-
|fp3||third pole frequency||Hz||20Meg||
|-
|fp4||fourth pole frequency||Hz||100Meg||
|-
|fz||first zero frequency||Hz||5Meg||
|-
|vcc_pos||positive dc voltage source||V||12||
|-
|vcc_neg||negative dc voltage source||V||12||
|-
|}

== Optocoupler ==

[[File:GK115.png]]

This is a five-pin parameterized optocoupler device. Its model consists of an ideal diode device in series with an Ohmic resistance connected between the Anode (A) and Cathode (K) pins together with a bipolar junction transistor device with three accessible pins, Collector (C), Base (B) and Emitter (E). A current-controlled current source is connected between base and collector of the BJT, whose current is controlled by the current passing through the diode. The proportionality constant is twice the specified value of the current transfer ratio (ctr) parameter.

You can change or enhance the models of the diode and BJT by adding more parameters. To do so, you have to open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|ctr||current transfer ratio||-||0.5||
|-
|rd||diode ohmic resistance||Ohms||0.1||
|-
|}

== Overtone Crystal ==

[[File:GK79.png]]

This is a 2-pin parameterized overtone crystal device.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|LM||fundamental motional inductance||H||250m||
|-
|CM1||fundamental motional capacitance||F||10f||
|-
|RM1||fundamental motional resistance||Ohms||20||
|-
|RM3||3rd overtone motional resistance||Ohms||50||
|-
|RM5||5th overtone motional resistance||Ohms||100||
|-
|RM7||7th overtone motional resistance||Ohms||150||
|-
|C0||shunt capacitance||F||3p||
|-
|}

== Photodiode ==

[[File:GK113.png]]

This is a 4-pin parameterized photodiode device. A pair of pins, Anode (A) and Cathode (K), represent the physical terminals of the photodiode. The photodiode model connected between the anode and cathode pins consists of the parallel connection of an ideal diode, a dark current source, a noise current source, a current-controlled current source, a diode capacitance, a shunt resistance altogether with a series resistance.

Another pair of pins IS+ and IS- act as an ammeter that must be inserted in a control circuit. The current passing through this ammeter controls the current of the photodiode. The default proportionality constant is unity. The controlling current is typically a function of light intensity incident on the surface of the photodiode.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|id||dark current||A||1n||
|-
|ir||noise current||A||1p||
|-
|cd||diode capacitance||F||10p||
|-
|rs||series resistance||Ohms||1m||
|-
|rp||parallel resistance||Ohms||1Meg||
|-
|}

==Piecewise Linear (PWL) Controlled Source==

[[File:GL49.png]]

The Piecewise Linear (PWL) Controlled Source is a single-input and single-output function generator whose output is not necessarily
linear for all input values. Instead, it follows an I/O relationship that is specified by the x_array and y_array coordinates. The x_array and y_array values represent vectors of coordinate points on the x and y axes, respectively. The x_array values are progressively increasing input coordinate points, and the associated y_array values represent the outputs at those points. There may be as few as two pairs specified, or as many as memory and simulation speed allow.

In order to fully specify outputs for values of Vin outside of the bounds of the PWL function, the PWL
controlled source model extends the slope found between the lowest two coordinate pairs and the highest
two coordinate pairs. This has the effect of making the transfer function completely linear for Vin
less than x_array[0] and Vin greater than x_array[n]. It also has the potentially subtle effect of unrealistically
causing an output to reach a very large or small value for large inputs. You should thus keep in mind
that the PWL Source does not inherently provide a limiting capability.

In order to diminish the potential for divergence of simulations when using the PWL block, a form
of smoothing around the x_array and y_array coordinate points is necessary. This is due to the iterative
nature of the simulator and its reliance on smooth first derivatives of transfer functions in order to
arrive at a matrix solution. Consequently, the two parameters "input_domain" and "fraction" are included
to allow you some control over the amount and nature o the smoothing performed.

Fraction is a switch that is either TRUE or FALSE. When TRUE (the default setting), the simulator assumes
that the specified input_domain value is to be interpreted as a fractional figure. Otherwise, it is interpreted
as an absolute value. Thus, if fraction = TRUE and input_domain = 0.10, the simulator assumes that the smoothing
radius about each coordinate point is to be set equal to 10% of the length of either the x_array segment
above each coordinate point, or the x_array segment below each coordinate point. The specific segment
length chosen will be the smallest of these two for each coordinate point.

If fraction = FALSE and input_domain = 0.10, then the simulator will begin smoothing the transfer function at 0.10
volts (or amperes) below each x_array coordinate and will continue the smoothing process for another 0.10
volts (or amperes) above each x_array coordinate point.

Model Identifier: pwl

Netlist Format:

A<device_name> %vd(<in_pin> <in_ref_pin>) %vd(<out_pin> <out_ref_pin>) <model_name>

.model <model_name> pwl x_array = [<value1> <value2> ...] y_array = [<value1>
<value2> ...] {<param1 = value> < param2 = value> ...}

Example:

A1 %vd(2 3) %vd(1 4) pwl
.model pwl pwl x_array = [0 1] y_array = [0 1]

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|x_array||x-element array||V||[0 1]||required
|-
|y_array||y-element array||V||[0 1]||required
|-
|input_domain||input smoothing domain||-||0.01||
|-
|fraction||smoothing %/abs switch||-||True||
|-
|}

== PM Modulated Source ==

[[File:GL25.png]]

This is a voltage source with a single-tone phase modulated waveform. The PM modulation index MDI is defined as the ratio of maximum phase deviation to maximum signal amplitude.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|V0||offset||V||0||
|-
|VA||amplitude||V||1||
|-
|FC||carrier frequency ||Hz||1||required
|-
|MDI||modulation index||-||0||required
|-
|FS||signal frequency ||Hz||1||required
|-
|}

== Potentiometer ==

[[File:GK77.png]]

This is a 3-pin device that models a potentiometer with options for either linear or logarithmic resistance. position = 0 corresponds to the wiper being at the extreme left and position = 1 corresponds to the wiper being at the extreme right. With the default position = 0.5 corresponding to the midpoint, this device functions as a one-half voltage divider.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|position||position of wiper connection||-||0.5||Must be between 0.0 and 1.0.
|-
|log||log-linear switch||-||False||Select False for linear and True for logarithmic.
|-
|r||total resistance||Ohms||0.1u||
|-
|log_multiplier||multiplier constant for log resistance||-||1.0||
|-
|}

== Programmable Unijunction Transistor (PUT)==

[[File:GK112.png]]

This is a 3-pin parameterized Programmable Unijunction Transistor (PUT) device with three pins: Base 1 (B1), Base 2 (B2) and Emitter (E). It is biased with a positive voltage between the two bases. This device has a unique characteristic that when it is triggered, its emitter current increases regeneratively until it is restricted by emitter power supply. It exhibits a negative resistance characteristic and so it can be employed as an oscillator. The device's model involves an NPN BJT and a PNP BJT. The forward beta parameters of the two transistors are set equal to 100 and 1, respectively. To change these values, open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|eta||-||-||0.6||
|-
|rbb||total base-to-base resistance||Ohms||40k||
|-
|rf||forward resistance||Ohms||1Meg||
|-
|rr||reverse resistance||Ohms||1Meg||
|-
|rgk||gate-to-cathode resistance||Ohms||100||
|-
|bvf||breakdown voltage of forward diode||V||100||
|-
|bvr||breakdown voltage of reverse diode||V||100||
|-
|bvgk||breakdown voltage of gate-to-cathode diode||V||5||
|-
|}

==Random Resistor==

[[File:GK93.png]]

The random resistor device models a resistor whose resistance is a random number between 0 and a maximum specified value.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|max_val||maximum resistance value||Ω||1k||
|-
|}

==Real Capacitor==

[[File:GK117.png]]

This is primarily a non-ideal, temperature-dependent capacitor model. You can access it from the Parts Menu as '''User-Defined Capacitor'''. It has two temperature coefficients: first-order TC1 temperature and second-order TC2. The value of the temperature-dependent capacitance is computed using the quadratic equation:

C(T) = C(T0) * [ 1 + TC1 * (T - T0) + TC2 * (T-T0)^2 ]

The device's model includes a series resistance and a series inductance together with the capacitor, all in parallel with a shunt resistance.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|Resr||series resistance||Ω||10||
|-
|Ls||inductance||H||1p||
|-
|C||capacitance||F||1n||
|-
|Rp||parallel resistance||Ω||1G||
|-
|ic||voltage initial condition||V||0||
|-
|temp||operating temperature||deg C||27||
|-
|tc1||first-order temperature coefficient||F/°C||0.1||
|-
|tc2||second-order temperature coefficient||F/°C2||0.01||
|-
|}

==Real Inductor==

[[File:GK118.png]]

This is primarily a non-ideal inductor model. You can access it from the Parts Menu as '''User-Defined Inductor'''. Its series resistor has two temperature coefficients: first-order TC1 temperature and second-order TC2. The value of the temperature-dependent resistance is computed using the quadratic equation:

R(T) = R(T0) * [ 1 + TC1 * (T - T0) + TC2 * (T-T0)^2 ]

The device's model includes a series resistance together with the inductor, and the combination in parallel with a shunt capacitance.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|Rdc||series resistance||Ω||10||
|-
|L||inductance||H||1||
|-
|Cp||capacitance||F||1p||
|-
|ic||current initial condition||A||0||
|-
|temp||operating temperature||deg C||27||
|-
|tc1||first-order temperature coefficient||Ω/°C||0.1||
|-
|tc2||second-order temperature coefficient||Ω/°C2||0.01||
|-
|}

==Real Resistor==

[[File:GK116.png]]

This is primarily a non-ideal, temperature-dependent resistor model. You can access it from the Parts Menu as '''User-Defined Resistor'''. It has two temperature coefficients: first-order TC1 temperature and second-order TC2. The value of the temperature-dependent resistance is computed using the quadratic equation:

R(T) = R(T0) * [ 1 + TC1 * (T - T0) + TC2 * (T-T0)^2 ]

The device's model includes a series inductance together with the resistor.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|R||resistance||Ω||1k||
|-
|Ls||inductance||H||1n||
|-
|temp||operating temperature||deg C||27||
|-
|tc1||first-order temperature coefficient||Ω/°C||0.1||
|-
|tc2||second-order temperature coefficient||Ω/°C2||0.01||
|-
|}

==Resistor==

[[File:GK119.png]]

Resistors are passive devices that dissipate power. Their resistance value varies depending on how much power they can dissipate and is measured
in Ohms. The transient, DC and AC behaviors of a resistor are all described by the same equation:

v = R * i

where v is the voltage across the resistor, i is the current passing through the resistor, and R is the resistance. The value of R must be nonzero.

All resistor names must begin with R.

Netlist Format:

R<device_name> <N+> <N-> <value>

Example:

R1 1 2 1k

[[RF.Spice A/D]] provides three types of resistor: Simple, User-Defined (Real Resistor) and Semiconductor. The resistance of the simple resistor is a single value expressed in Ohms. You can also set the Monte Carlo tolerance for this resistor.

==Schottky Diode==

[[File:GK80.png]]

The Schottky diode has the same model as the generic diode with a nonzero transit time (tt), a nonzero junction capacitance (cjo) and a typically larger saturation current (is), a lower junction potential (vj) and a smaller grading coefficient (m).

==Semiconducting Capacitor==

[[File:GK83.png]]

This is the more general form of the Capacitor model and allows for the calculation of the actual capacitance value from strictly geometric information and the specifications of the process.

General Form:

CXXXXXXX N1 N2 <VALUE> <MNAME> <L=LENGTH> <W=WIDTH> <IC=VAL>

If VALUE is specified, it defines the capacitance. If MNAME is specified, then the capacitance is calculated from the process information in the model MNAME and the given LENGTH and WIDTH. If VALUE is not specified, then MNAME and LENGTH must be specified. If WIDTH is not specified, then it is taken from the default width given in the model. Either VALUE or MNAME, LENGTH, and WIDTH may be specified, but not both sets. The optional initial condition "IC" is the initial voltage across the capacitor for transient simulations.

The capacitance is computed as:

CAP = CJ * (LENGTH - NARROW) * (WIDTH - NARROW)+ 2 * CJSW * (LENGTH + WIDTH - 2NARROW) * CAP

To modify the model parameters, first double click on the capacitor to edit its top-level model parameters. Then choose the button labeled {{key|Edit from Table}} in the process model section. This will open a window in which you can edit CJ, CJSW, NARROW, DEFW, and CAP.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|CJ||junction bottom capacitance||F/m2||-||
|-
|CJSW||junction sidewall capacitance||F/m ||-||
|-
|DEFW||default device width||m||1u||
|-
|NARROW||narrowing due to side etching||m||0||
|-
|CAP||nominal capacitance for Monte Carlo simulation||F||1||
|-
|}

== Semiconductor Resistor ==

[[File:GK82.png]]

This is the more general form of the resistor model and allows for the modeling of temperature effects and for the calculation of the actual resistance value from strictly geometric information and the specifications of the process.

General Form:

RXXXXXXX N1 N2 <VALUE> <MNAME> <L=LENGTH> <W=WIDTH> <TEMP=T>

If VALUE is specified, it overrides the geometric information and defines the resistance. If MNAME is specified, then the resistance may be calculated from the process information in the model MNAME and the given LENGTH and WIDTH. If VALUE is not specified, then MNAME and LENGTH must be specified. If WIDTH is not specified, then it is taken from the default width given in the model. The (optional) TEMP value is the temperature at which this device is to operate, and overrides the temperature specification in the SPICE Options Dialog.

The resistance is computed as:

R(T0) = (RSH) * [(L - NARROW) / (W - NARROW)] * RES

R(T) = R(T0) * [ 1 + TC1 * (T - T0) + TC2 * (T-T0)^2 ]

To modify the model parameters, first double click on the resistor to edit its top-level model parameters. Then choose the button labeled {{key|Edit from Table}} in the process model section. This will open a window in which you can edit TC1, TC2, RSH, RES, etc.

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|TC1||first order temperature coefficient||Ω/°C||-||
|-
|TC2||second order temperature coefficient||Ω/°C2||-||
|-
|RSH||sheet resistance||Ω/sq||-||
|-
|DEFW||default device width||m||1u||
|-
|NARROW||narrowing due to side etching||m||0||
|-
|TNOM||the parameter measurement temperature||deg C ||27||
|-
|RES||resistance multiplier for Monte Carlo simulation||Ohms||1||
|-
|}

== Silicon-Controlled Rectifier (SCR)==

[[File:GK109.png]]

This is a 3-pin parameterized Silicon-Controlled Rectifier (SCR) device with three pins: Anode (A), Cathode (K) and Gate (G). It is a unidirectional device which can conduct current only in one direction. The SCR can be triggered only by a positive current going into its gate. The device's model involves an NPN BJT and a PNP BJT. The forward beta parameters of the two transistors are set equal to 100 and 1, respectively. To changes these values, open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|rf||forward resistance||Ohms||1Meg||
|-
|rr||reverse resistance||Ohms||1Meg||
|-
|rgk||gate-to-cathode resistance||Ohms||100||
|-
|bvf||breakdown voltage of forward diode||V||100||
|-
|bvr||breakdown voltage of reverse diode||V||100||
|-
|bvgk||breakdown voltage of gate-to-cathode diode||V||5||
|-
|}

== SPDT Switch ==

[[File:GK72.png]]

This is a 5-pin device that models a single-pole double-throw switch. The input voltage is transferred to the first output pin if the control voltage is at a high state. Otherwise, its is transferred to the second output pin.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|von||turn-on voltage||V||3.3||
|-
|voff||turn-off voltage||V||0.3||
|-
|vt||threshold voltage||V||1.0||
|-
|ron||on resistance||Ohms||1.0||
|-
|roff||off resistance||Ohms||1Gig||
|-
|}

== SPST Switch ==

[[File:GK71.png]]

This is a 4-pin device that models a single-pole single-throw switch. It is virtually equivalent of the standard voltage-controlled switch.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|von||turn-on voltage||V||3.3||
|-
|voff||turn-off voltage||V||0.3||
|-
|vt||threshold voltage||V||1.0||
|-
|ron||on resistance||Ohms||1.0||
|-
|roff||off resistance||Ohms||1Gig||
|-
|}

==Tabulated Conductor==

[[File:GK92.png]]

The tabulated conductor model allows the conductance to be described by a table relating the device's current i(t) to its terminal voltage v(t). In effect, the conductance is defined as G = di(t)/dv(t). The model provides two interpolation options: cubic spline and piecewise linear. You can enter the (v,i) data pairs in the text box provided in the property dialog. Or you can import the data from a text file.

==Tabulated Resistor==

[[File:GK91.png]]

The tabulated resistor model allows the resistance to be described by a table relating the device's terminal voltage v(t) to its current i(t). In effect, the resistance is defined as R = dv(t)/di(t). The model provides two interpolation options: cubic spline and piecewise linear. You can enter the (i,v) data pairs in the text box provided in the property dialog. Or you can import the data from a text file.

==Tapped Inductor==

[[File:GK101.png]]

This 3-pin device models a tapped inductor with mutual coupling effect.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|Lt||total inductance||H||1m||
|-
|ratio||ratio of number of turns between positive terminal and tap to total number of turns||-||0.5||
|-
|k||coefficient of coupling||-||1.0||
|-
|}

== Temperature-Dependent Current Source ==

[[File:GL14.png]]

This is a current source whose current is an arbitrary function of the circuit temperature. You have to open the subcircuit model dialog by clicking the {{key|Edit Model...}} button and edit its text. Enter any mathematical expression in the variable "v(T)" standing for temperature. Note that the circuit temperature is set and controlled by the parameter "temp" in the Miscellaneous tab of the SPICE [[Simulation Options]] dialog.

Examples:

* v(T) is equivalent to f(T) = T.
* 1 + 0.1*(v(t))^2 is equivalent to f(T) = 1 + 0.1T.

Parameters:

None

== Temperature-Dependent Voltage Source ==

[[File:GL13.png]]

This is a voltage source whose voltage is an arbitrary function of the circuit temperature. You have to open the subcircuit model dialog by clicking the {{key|Edit Model...}} button and edit its text. Enter any mathematical expression in the variable "v(T)" standing for temperature. Note that the circuit temperature is set and controlled by the parameter "temp" in the Miscellaneous tab of the SPICE [[Simulation Options]] dialog.

Examples:

* v(T) is equivalent to f(T) = T.
* 1 + 0.1*(v(t))^2 is equivalent to f(T) = 1 + 0.1T.

Parameters:

None

==Thermometer==
[[File:G115.png]]

The Thermometer is a two-pin device that measures the operating temperature of a circuit. The voltage across the device pins is equal to SPICE's operating temperature in degrees centigrade. The output voltage of the Thermometer can be used in conjunction with linear or nonlinear dependent sources to model temperature-dependent quantities.

Model Identifier: thermo

Parameters:

This device has no parameters.

== Triac Thyristor ==

[[File:GK110.png]]

This is a 3-pin bidirectional thyristor device that conducts current in either direction when triggered. A thyristor is analogous to a relay in that a small voltage and current can control a much larger voltage and current. The triac has two anode pins termed Main Terminal 1 (MT1) and Main Terminal 2 (MT2) and a Gate (G) pin. In order to create a triggering current for a triac, either a positive or negative voltage can be applied to the gate. Once triggered, the thyristor continues to conduct, even if the gate current ceases, until the main current drops below a certain level called the holding current. The device's model involves two NPN BJT transistors and two PNP BJT transistors. The forward beta parameters of the NPN and PNP transistors are set equal to 20 and 5, respectively. To changes these values, open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|rf||forward resistance||Ohms||1Meg||
|-
|bvf||breakdown voltage of forward diodes||V||100||
|-
|rh||resistance controlling reverse holding current||Ohms||100||
|-
|rgp||resistance controlling forward holding current and trigger current||Ohms||50||
|-
|}

==Uniform RC Transmission Line==

[[File:G23.png]]

The standard parameters are L, and N. They are described below:

Two of the nodes are the element nodes connected by the RC line. The third is the node to which the capacitances
are connected. L is the length of the RC line in meters. N is the number of lumped segments to use in
modeling the RC line.

This device is derived from a model proposed by Gertzberrg. It expands the URC line into a network of
lumped RC segments with internally generated nodes. These segments increase toward the middle of the
URC line in a geometric progression with K as the proportionality constant.

The URC line is made up entirely of resistor and capacitor segments, unless the ISPERL parameter has a
non-zero value. In this case, capacitors are replaced by reverse biased diodes with an equivalent zero-bias
junction capacitance, a saturation current of ISPERL amps per meter of transmission line, and optional
series resistance of RSPERL ohms per meter.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!EXAMPLE
|-
|K||propagation constant||-||2||1.2
|-
|FMAX||maximum frequency of interest||Hz||1.0G||6.5Meg
|-
|RPERL||resistance per unit length||Ohm /m||1000||10
|-
|CPERL||capacitance per unit length||F/m||1.0e-15||1pF
|-
|ISPERL||saturation current per unit length||A/m||0||-
|-
|RSPERL||diode resistance per unit length||Ohm/m||0||-
|-
|}

==Varactor Diode==

[[File:GK81.png]]

A varactor diode is a combination of the generic diode with additional package inductance, package capacitance and a series resistance. This diode device has a typically large value of junction capacitance (cjo).

Parameters (in addition to standard diode parameters):

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|q||quality factor||-||5000||
|-
|f0||frequency of Q-factor specification||Hz||50Meg||
|-
|ls||package inductance||H||0.5n||
|-
|cp||package capacitance ||F||0.05p||
|-
|}

==Voltage-Controlled Capacitor==

[[File:GK85.png]]

This 3-pin device models a voltage-controlled two-terminal capacitor whose capacitance is linearly proportional to a control voltage that is applied to a third (CTRL) pin. The proportionality constant is a conversion factor which you need to specify in F/V.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|K_C||conversion factor||F/V||1.0||
|-
|}

==Voltage-Controlled Inductor==

[[File:GK86.png]]

This 3-pin device models a voltage-controlled two-terminal inductor whose inductance is linearly proportional to a control voltage that is applied to a third (CTRL) pin. The proportionality constant is a conversion factor which you need to specify in H/V.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|K_L||conversion factor||H/V||1.0||
|-
|}

==Voltage-Controlled Resistor==

[[File:GK84.png]]

This 3-pin device models a voltage-controlled two-terminal resistor whose resistance is linearly proportional to a control voltage that is applied to a third (CTRL) pin. The proportionality constant is a conversion factor which you need to specify in Ω/V.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|K_r||conversion factor||Ω/V||1.0||
|-
|}

==Voltage-Controlled Switch==

[[File:G19.png]]

Switches are devices that exhibit high resistance when open (OFF state) and low resistance when closed (ON state). The switch model allows an almost ideal switch to be specified. With careful selection of the on and off resistances, they can effectively represent zero and infinite resistances in comparison to other circuit elements, while sustaining the model condition of a positive, finite value.

There are two versions of Voltage-Controlled Switch: two-terminal and four-terminal. For the two-terminal device, you must specify the name of the controlling Voltmeter or controlling voltage nodes, as well as the turn-on and turn-off voltages in Volts and on and off resistance values in Ohms. The four-terminal device already provides nodes for a controlling voltmeter, and you just specify the rest of [[parameters]]. When the voltage across the switch or controlling device is greater or equal to the turn-on current, the switch closes. When the voltage across the switch or controlling device is less than or equal to the turn off current, the switch opens.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|V_ON||turn-on voltage||V||0.5||
|-
|V_OFF||turn-off voltage||V||0.0||
|-
|RON||on resistance||Ohms||1.0||
|-
|ROFF||off resistance||Ohms||1G||
|-
|}

==Voltage Noise Source==

[[File:GL15.png]]

This is a voltage noise generator characterized by a spectral density and corner frequency. You have to click the {{key|Edit Model...}} button to access the parameters of this device.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|En||noise voltage||V/√Hz||1n||required
|-
|freq||noise corner frequency||Hz||100||required
|-
|}

==Voltage Source==

[[File:G17A.png]]

A voltage source has a DC value, a transient behavior, an AC behavior, and distortion parameters. The transient type, AC parameters, and distortion parameters are defined on the first tab of the source's property dialog. The transient expression can be a pulse, sinusoid, exponential, or piecewise linear. The DC value of a voltage source is its initial transient value. For a source with a sinusoidal transient behavior, for example, the DC value will be equal to its transient offset voltage. The AC parameters are magnitude and phase. These are used during the AC Frequency Sweep analysis. The distortion parameters, two sets of magnitude and phase, are used during the distortion analysis. The AC and distortion parameters are defined on the second tab of the source's property dialog.

==XSpice Devices and their models==

XSpice devices have the following form:

A<device_name> <node1> <node2> ... <model_name>


e.g., A2 1 2 transfer_function

Note that XSpice devices must start with the "A" designation, much as a resistor starts with
an "R". Some devices will have grouped (or vector) pins and are designated by being placed
inside square brackets. In the example shown below, the 1 and 2 pins are grouped. Pin 3 is not. 


A1 [1 2] 3 summer 

Some models will have voltage differential pairs of pins and will be denoted by a %vd( ). In the following
example pins 1 and 4 are differential pairs, as well as pins 2 and 3. Differential pairs must go between
parentheses ().


A1 %vd(1 4) %vd(2 3) triangle 

Refer to individual devices for more information.

Each XSpice device will also have a model associated with it. Each model will have the following form:


.model <model_name> <model_identifier> {<pname1 = pval1>} {<pname2 = pval2>}
...


e.g., .model transfer_function s_xfer in_offset = 0.0 gain = 1.0

Model_name refers to the name given in the device line. Model_identifier is an internal designation and
must be of an existing designation Refer to each device's example for the correct designation.

Parameter values are optional. If they aren't specified, then the default will be used. Some devices
have parameters that require a value and must be specified. Refer to individual devices for any required parameters.

==Zener Diode==

[[File:G10.png]]

The Zener Diode models the DC characteristics of most zeners. Since most data sheets for zener diodes do
not give detailed characteristics in the forward region, only a single point defines the forward characteristicThe
saturation current refers to the relatively constant reverse current that is produced when the voltage
across the zener is negative, but breakdown has not been reached. The reverse leakage current determines
the slight increase in reverse current as the voltage across the zener becomes more negative. It is modeled
as a resistance parallel to the zener with value v_breakdown / i_rev.

Note that the limt_switch parameter engages an internal limiting function for the zener. This can, in
some cases, prevent the simulator from converging to an unrealistic solution if the voltage across or
current into the device is excessive. If use of this feature fails to yield acceptable results, the convlimit
option should be tried (add the following statement to the SPICE input deck: .options convlimit)

Model Identifier: zener

Netlist Format:

A<device_name> <z_pin> <z_out_pin> <model_name>

.model <model_name> zener v_breakdown = 1 {<param1 = value> < param2 = value> ...}

Example:

A1 1 2 zener

.model zener zener v_breakdown = 1

Parameters:

{| class="wikitable"
|-
!Name!!Description!!Default!!Notes
|-
|v_breakdown||breakdown voltage||1||required
|-
|i_breakdown||breakdown current||2.0e-2||
|-
|i_sat||saturation current||1.0e-12||
|-
|N_forward||forward emission coefficient||1.0||
|-
|limit_switch||switch for on-board limiting (convergence aid)||False||
|-
|}

 
[[Image:Back_icon.png|40px]] '''[[RF.Spice_A/D | Back to RF.Spice A/D Wiki Gateway]]'''

RF.Spice A/D Glossary

2024-10-07T16:04:31Z

Asabet:

RF.Spice A/D Glossary

2024-10-07T15:53:00Z

Asabet:

==4-Bit ADC Bridge==

[[File:GK44.png]]

This 8-pin device is simply a bundle of 4 1-bit ADC bridges. Each analog input pin has a corresponding digital output pin.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|in_low||maximum 0-valued analog input||V||0.1||required
|-
|in_high||minimum 1-valued analog input||V||0.9||required
|-
|}

== 4-Bit A/D Converter Block ==

[[File:GK21.png]]

This is a 5-pin mixed-signal device with an analog input and 4 digital outputs. Based on the specified maximum input voltage level, a total of 16 discrete voltage levels are established. The block fits the input analog voltage between two of these 16 discrete levels and outputs the 4-bit binary equivalent to 4 digital pins B0-B3 representing the LSB and MSB, respectively.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|max_val||maximum input voltage||V||5||
|-
|}

==4-Bit DAC Bridge==

[[File:GK45.png]]

This 8-pin device is simply a bundle of 4 1-bit DAC bridges. Each digital input pin has a corresponding analog output pin.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|out_low||analog output for 0 digital input||V||0||required
|-
|out_high||analog output for 1 digital input||V||1||required
|-
|}

== 4-Bit D/A Converter Block ==

[[File:GK22.png]]

This is a 5-pin mixed-signal device with 4 digital inputs and an analog output. Based on the specified low and high output voltage levels, a total of 16 discrete voltage levels are established. The block converts the input 4-bit word (B0-B3 representing the LSB and MSB, respectively) to the corresponding discrete voltage level and outputs it as an analog voltage signal.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|out_low||output low voltage level||V||0||
|-
|out_high||output high voltage level||V||5||
|-
|}

== 4-Bit Signal Digitizer Block ==

[[File:GK15.png]]

This is a 6-pin mixed-signal device with an analog input, a digital clock and 4 digital outputs. It samples its analog input signal at the period of the supplied digital clock. The digitized version of the input signal is sent out to 4 digital outputs B0-B3 representing the LSB and MSB, respectively.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|r_in||input resistance||Ω||10G||
|-
|max_val||maximum input voltage||V||5||
|-
|}

==50-Ohm Load==
[[File:GK70.png]]

This is a simple 50Ω resistive load, which can also be accessed by the keyboard shortcut {{key|Alt+5}}.

== 8-Bit A/D Converter Block ==

[[File:GK23.png]]

This is a 9-pin mixed-signal device with an analog input and 8 digital outputs. Based on the specified maximum input voltage level, a total of 256 discrete voltage levels are established. The block fits the input analog voltage between two of these 256 discrete levels and outputs the 8-bit binary equivalent to 8 digital pins B0-B7 representing the LSB and MSB, respectively.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|max_val||maximum input voltage||V||5||
|-
|}

== 8-Bit D/A Converter Block ==

[[File:GK24.png]]

This is a 9-pin mixed-signal device with 8 digital inputs and an analog output. Based on the specified low and high output voltage levels, a total of 256 discrete voltage levels are established. The block converts the input 8-bit word (B0-B7 representing the LSB and MSB, respectively) to the corresponding discrete voltage level and outputs it as an analog voltage signal.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|out_low||output low voltage level||V||0||
|-
|out_high||output high voltage level||V||5||
|-
|}

== AC/RF Current Source ==

[[File:GL11.png]]

This is a simplified version of the standard Current Source, in which the AC "Use" box has been checked by default. Therefore, it is ready to be used for AC frequency sweep. Note that for AC frequency sweep, you do not need to specify the frequency.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|VA||peak current amplitude||A||1||required
|-
|Freq||frequency ||Hz||1||required
|-
|Phase||phase||deg||0||
|-
|offset||DC offset for small-signal current||A||0||
|-
|}

== AC/RF Voltage Source ==

[[File:GL10.png]]

This is a simplified version of the standard Voltage Source, in which the AC "Use" box has been checked by default. Therefore, it is ready to be used for AC frequency sweep. Note that for AC frequency sweep, you do not need to specify the frequency.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|VA||peak voltage amplitude||V||1||required
|-
|Freq||frequency ||Hz||1||required
|-
|Phase||phase||deg||0||
|-
|offset||DC offset for small-signal voltage||V||0||
|-
|}

==Alternate Ferrite Core Transformer==

[[File:GK96.png]]

The alternate ferrite core transformer is a four-pin two-port device, which has the same behavior as the [[Glossary of Generic Analog & Mixed-Mode Devices#Ferrite_Core_Transformer | Ferrite Core Transformer]], except for the reversed polarity of its secondary port.

==Alternate Ideal Transformer==

[[File:XFMR2.png]]

The alternate ideal transformer is a four-pin two-port device, which has the same behavior as the [[Glossary of Generic Analog & Mixed-Mode Devices#Ideal_Transformer | Ideal Transformer]], except for the reversed polarity of its secondary port.

== AM Modulated Source ==

[[File:GL23.png]]

This is a voltage source with a single-tone amplitude modulated waveform. The AM modulation index MDI is defined as the ratio of maximum amplitude deviation to maximum signal amplitude.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|V0||offset||V||0||
|-
|VA||amplitude||V||1||
|-
|FC||carrier frequency ||Hz||1||required
|-
|MDI||modulation index||-||0||required
|-
|FS||signal frequency ||Hz||1||required
|-
|}

== Amplitude Modulator Block==

[[File:GL87.png]]

This device takes an input signal and generates an AM modulated output signal of a specified carrier frequency with a specified modulation index.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|r_in||input resistance||Ω||1G||
|-
|r_out||output resistance||Ω||1u||
|-
|m||modulation index||-||0.5||
|-
|fc||carrier frequency||Hz||1Meg||
|-
|ac||carrier peak amplitude||V||1||
|-
|}

== Amplitude Shift-Keying Modulator Block==

[[File:GL91.png]]

This device takes a digital input like a binary sequence and generates an ASK modulated output signal with two specified carrier amplitude levels.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|r_out||output resistance||Ω||1u||
|-
|fc||carrier frequency||Hz||1Meg||
|-
|ac_lo||low carrier peak amplitude||V||0.0||
|-
|ac_hi||high carrier peak amplitude||V||1.0||
|-
|}

== Analog Clock ==

[[File:GL30.png]]

This is a periodic pulse generator with a default 0V low output level and a default 5V high output level.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|delay||delay time||sec||0||
|-
|rise||rise time||sec||0.1n||
|-
|fall||fall time||sec||0.1n||
|-
|pulse_wid||clock pulse width||sec||1u||required
|-
|period||clock period||-||2u||required
|-
|out_low||low output voltage level||V||0||
|-|-
|out_high||high output voltage level||V||5||
|-
|}

== Analog Differentiator Block ==

[[File:GK32.png]]

This device outputs the derivative of its input signal. It is a native [[RF.Spice A/D]] block and different from the XSPICE Differentiator Block, which is a more extensive model.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|gain||gain||-||1.0||
|-
|offset||offset voltage||V||0||
|-
|fmax||maximum signal frequency||Hz||1Meg||
|-
|}

== Analog integrator Block ==

[[File:GK33.png]]

This device outputs the integral of its input signal assuming zero initial conditions. It is a native [[RF.Spice A/D]] block and different from the XSPICE Integrator Block, which is a more extensive model.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|gain||gain||-||1.0||
|-
|offset||offset voltage||V||0||
|-
|fmax||maximum signal frequency||Hz||1Meg||
|-
|}

== Analog One-Half Frequency Divider Block==

[[File:GL78.png]]

This device takes a harmonic input signal and generates a harmonic output signal with a frequency one half lower and a user specified amplitude.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|r_in||input resistance||Ω||1G||
|-
|r_out||output resistance||Ω||1u||
|-
|max_val||output amplitude||V||1.0||
|-
|}

== Analog Phase-Locked Loop Block==

[[File:GL86.png]]

This 5-pin device is a parameterized model of an analog phase-locked loop. It provides two phase-locked output signals with square wave and triangular wave waveforms. The outputs of the lowpass filter and phase detector are also accessible via the designated pins.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|r_in||input resistance||Ω||1G||
|-
|r_out||output resistance||Ω||1u||
|-
|K_d||voltage conversion factor of phase detector||V/rad||1.0||
|-
|K_f||frequency conversion factor of VCO||Hz/V||1k||
|-
|V_sq||square wave output peak amplitude||V||1||
|-
|V_tri||triangular wave output peak amplitude||V||1||
|-
|VT||VCO input dynamic range||V||1||
|-
|r_time||VCO timing resistor||Ω||12k||
|-
|c_time||VCO timing capacitor||F||10n||
|-
|fo||VCO free-running frequency||Hz||1k||
|-
|r_lpf||lowpass filter resistor||Ω||10k||
|-
|c_lpf||lowpass filter capacitor||F||100n||
|-
|}

==Analog-to-Digital Converter (ADC) Bridge==
[[File:GK42.png]]

The ADC Bridge takes an analog value from an analog node and may be in the form of a voltage or current.
If the input is less than or equal to "in_low", then a digital "0" is generated. If
the input is greater than or equal to "in_high", a digital "1" is generated. Otherwise,
a digital "UNKNOWN" is the output value. Unlike the DAC Bridge, ramping or delay is not applicable.
Rather, the continuous ramping of the input provides for any associated delays in the digitized signal.

This model also posts an input load value based on the parameter input_load.

Model Identifier: adc_bridge

Netlist Format:

A<device_name> [<in_pin> {<in2_pin>> ...}] [<out_pin> {<out2_pin> ...}] <model_name>

.model <model_name> adc_bridge {<param1 = value> < param2 = value> ...}

Example:

A [1] [2] adc_bridge

.model adc_bridge adc_bridge in_low = .1 fall_delay = 1n

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|in_low||maximum 0-valued analog input||V||0.1||required
|-
|in_high||minimum 1-valued analog input||V||0.9||required
|-
|rise_delay||L-to-H delay time||sec||1n||
|-
|fall_delay||H-to-L delay time||sec||1n||
|-
|}

== Arbitrary Temporal Waveform Generator ==

[[File:GL17.png]]

This is a voltage source with an arbitrary waveform defined by a mathematical expression. You have to open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text. Enter any mathematical expression in the variable "v(t)" standing for time.

Examples:

* v(t) is equivalent to f(t) = t.
* 0.1*(v(t))^2 is equivalent to f(t) = 0.1t^2.
* sin(2*pi*v(t)) is equivalent to f(t) = sin(2πt).

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|Tmax||maximum signal duration||sec||1e6||required
|-
|}

== Arithmetic Mean Block ==

[[File:GL56.png]]

This 3-pin device sends the arithmetic mean or average of its two inputs to the output with a default unity gain.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|gain||gain||-||1.0||
|-
|}

==Attenuator: Pi-Type==
[[File:G75.png]]

This is a four-pin, two-port device that models a resistive power attenuator with the "Pi" configuration. The characteristic impedances of the input and output transmission lines can be different. The K-parameter is the power attenuation ratio from the input to the output.

Model Identifier: attenuator Pi
'''Bold text'''

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|Zo1||input line characteristic impedance||Ohms||50.0||
|-
|Zo2||output line characteristic impedance||Ohms||50.0||
|-
|K||input/output power ratio||-||1.0||
|-
|}

==Attenuator: T-Type==
[[File:G74.png]]

This is a four-pin, two-port device that models a resistive power attenuator with the "T" configuration. The characteristic impedances of the input and output [[Transmission Lines|transmission lines]] can be different. The K-parameter is the power attenuation ratio from the input to the output.

Model Identifier: attenuator T

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|Zo1||input line characteristic impedance||Ohms||50.0||
|-
|Zo2||output line characteristic impedance||Ohms||50.0||
|-
|K||input/output power ratio||-||1.0||
|-
|}

==Auto-Transformer==

[[File:GK102.png]]

This 3-pin device models an auto-transformer with mutual coupling effect.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|Lp||primary inductance||H||1m||
|-
|Ls||secondary inductance||H||1m||
|-
|k||coefficient of coupling||-||1.0||
|-
|}

==Bias Tee==
[[File:G83.png]]

This is a six-pin, three-port device that models a passive RF bias tee. The two RF and DC inputs mix into the output (RF+DC) port.

Model Identifier: bias-tee

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|L||inductance||nH||100.0||
|-
|C||capacitance||nF||100.0||
|-
|}

==Bipolar Junction Transistor (BJT)==
[[File:G11.png]]

The BJT is an active device which has up to 4 pins. The three standard pins are base, emitter, and collector. These are given in the default symbol. The substrate, which is grounded by default, is the fourth pin. To use the BJT with the substrate, create a new 4-pin BJT using the Device Editor and Symbol Editor.

The standard device parameters are AREA, OFF, IC, and T. They are described below:

{| class="wikitable"
|-
|AREA||area factor (optional) (If not specified, the default value is 1.0.)
|-
|OFF||initial condition for the DC analysis (optional)
|-
|IC||initial condition (optional) (Used when a transient analysis is desired, which starts from other than the quiescent operating point.)
|-
|T||operating temperature of the device (optional)
|-
|}

Area factor scales the model parameters RE and RC. IC VBE is the initial voltage from base emitter. IC VCE is the initial voltage from collector to emitter. TEMP is the overriding temperature. These parameters are based on the Gummel and Poon integral-charge model. If these parameters are not specified, then it will reduce to the simpler Ebers-Moll model.

The process model is mandatory for the BJT. Descriptions of the process model parameters are given in the following table:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!EXAMPLE
|-
|IS||transport saturation current||A||1.0e-16||1.0e-15
|-
|BF||ideal maximum forward beta|| ||100||100
|-
|NF||forward current emission coefficient|| ||1.0||1
|-
|VAF||forward Early voltage||V||infinite||200
|-
|IKF||corner forward beta high current roll-off||A||infinite||0.01
|-
|ISE||B-E leakage saturation current||A||0||1.0e-13
|-
|NE||B-E leakage emission coefficient|| ||1.5||2
|-
|BR||ideal maximum reverse beta|| ||1||0.1
|-
|NR||reverse current emission coefficient|| ||1||1
|-
|VAR||reverse Early voltage||V||infinite||200
|-
|IKR||corner reverse beta high current roll-off||A||infinite||0.01
|-
|ISC||B-C leakage saturation current||A||0||1.0e-13
|-
|NC||B-C leakage emission coefficient|| ||2||1.5
|-
|RB||zero bias base resistance||ohms||0||100
|-
|IRB||current where base resistance falls halfway to minimum value||A||infinite||0.1
|-
|RBM||minimum base resistance at high currents||ohms||RB||10
|-
|RE||emitter resistance||ohms||0||1
|-
|RC||collector resistance||ohms||0||10
|-
|CJE||B-E zero bias depletion capacitance||F||0||2pF
|-
|VJE||B-E built-in potential||V||0.75||0.6
|-
|MJE||B-E junction exponential factor|| ||0.33||0.33
|-
|TF||ideal forward transit time||sec||0||0.1ns
|-
|XTF||coefficient for bias dependence of TF|| ||0||
|-
|VTF||voltage describing VBC dependence of TF||V||infinite||
|-
|ITF||high-current parameter for effect on TF||A||0||
|-
|PTF||excess phase at freq=1.0/(TF*2PI)Hz||degree||0||
|-
|CJC||B-C zero bias depletion capacitance||F||0||2pF
|-
|VJC||B-C built-in potential||V||0.75||0.5
|-
|MJC||B-C junction exponential factor|| ||0.33||0.5
|-
|XCJC||fraction of B-C depletion capacitance connected to internal base node|| ||1||
|-
|TR||ideal reverse transit time||sec||0||10ns
|-
|CJS||zero bias collector-substrate capacitance||F||0||2pF
|-
|VJS||substrate junction built-in potential||V||0.75||
|-
|MJS||substrate junction exponential factor|| ||0||0.5
|-
|XTB||forward and reverse beta temp. exponent|| ||0||
|-
|EG||energy gap for temperature effect on IS||eV||1.11||
|-
|XTI||temperature exponent for effect on IS|| ||3||
|-
|KF||flicker-noise coefficient|| ||0||
|-
|AF||flicker-noise exponent|| ||1||
|-
|FC||coefficient for forward bias depletion capacitance formula|| ||0.5||
|-
|TNOM||parameter measurement temperature||deg. C||27||50
|-
|}

==Bond Wire Above Ground==
[[File:GK55.png]]

This is a two-pin, one-port device that models a bond wire including the ground effect.

Model Identifier: BondWire-Free

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|r||wire radius||mm||0.1||
|-
|l||pad spacing||mm||1.0||
|-
|h||height above ground||mm||1.0||
|-
|sigma||wire conductivity||S/m||1e8||
|-
|}

==Bond Wire (Free-Space)==
[[File:GK54.png]]

This is a two-pin, one-port device that models a bond wire with no ground effect.

Model Identifier: BondWire-Free

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|r||wire radius||mm||0.1||
|-
|l||pad spacing||mm||1.0||
|-
|sigma||wire conductivity||S/m||1e8||
|-
|}

==Branchline Hybrid Coupler==
[[File:G81.png]]

This is an eight-pin, four-port device that models a branchline quadrature hybrid coupler. If Port 1 acts as an input port, the output power is equally split between Ports 2 and 3. Port 2 has 90° phase shift with respect to the input, while Port 3 is in-phase with respect to the input. Port 4 acts as an isolated port. Since the branchline hybrid has a symmetric structure, any port can serve as the input port. You have to specify the center frequency of the device in GHz.

Model Identifier: branchline

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|Z0||line characteristic impedance||Ohms||50.0||
|-
|eeff||effective permittivity||-||1.0||
|-
|fc||center frequency||GHz||1.0||
|-
|len||port line segment length||mm||10.0||
|-
|}

==Capacitance Meter==
[[File:G37.png]]

The Capacitance Meter measures the total capacitance between a circuit node and the ground. The input pin of the device is connected to the measurement node. The output voltage of the device is then a scaled value equal to the total capacitance seen on its input multiplied by the gain parameter. This model is primarily intended as a building block for other models which must sense a capacitance value and alter their behavior based upon it.

Model Identifier: cmeter

Netlist Format:

A<device_name> <in_pin> <out_pin> <model_name>

.model <model_name> cmeter {<gain = value>}

Example:

A1 1 2 cap_meter

.model cap_meter cmeter gain = 1

Parameters:

The only parameter is the gain with a default value of 1.0.

==Capacitor==
[[File:GK120.png]]

Capacitors are used to store electrical energy. They can filter or remove AC signals or block DC current without disrupting AC signals. A capacitor's ability to store energy is termed capacitance and is measured in Farads, with values from pF to mF. The only time current flows through a capacitor is when the charge is collected on, or is removed from, its parallel plates. This means that the voltage across the capacitor is changing, which doesn't conform to DC analysis. In a physical circuit, there is a transition stage during which capacitors charge up to their final values. The result is the same as if these capacitors did not exist and the connections to them were left dangling. In other words, in a (steady-state) DC analysis, a capacitor behaves like an open circuit. Therefore, it is important that no section of the circuit is isolated from the capacitors. Every circuit node needs some path for DC current to the ground.

A capacitor's transient behavior is described by the equation:

i(t) = C * (dv(t)/dt)

Its initial voltage is only important when the simulator performs a transient analysis, and the "Use Initial Conditions" checkbox is checked.

An capacitor's AC behavior is described by the equation:

i = j ω * C * v

All capacitor names must begin with C.

Netlist Format:

C<device_name> <N+> <N-> <value>

Example:

C1 1 2 10p

[[RF.Spice A/D]] provides three types of capacitors: simple, user-defined (or real) and semiconductor. The standard capacitor parameters are N+, N-, VALUE, and IC. In a simple capacitor, VALUE must
be specified for the capacitance in Farads. IC is the (optional) initial condition for the capacitor voltage.

==Center-Tapped Ferrite Core Transformer==

[[File:GK97.png]]

This five-pin three-port device models a center-tapped physical transformer with a magnetic ferrite core. Its model is based on XSPICE's magnetic core and inductive coupling models. For this device you need to specify physical parameters like cross sectional area, core length and number of primary and secondary turns. The physical model of the magnetic device is defined by two vectors: magnetic field intensity H in A/m and magnetic flux density B (also known as magnetic induction) in Tesla. The default array values are:

H_array = [-250 -100 -50 -37.5 -25 -12.5 0 12.5 25 37.5 50 100 250]

B_array = [-0.375 -0.36 -0.32 -0.29 -0.24 -0.15 0 0.15 0.24 0.29 0.32 0.36 0.375]

To change the value of H/B arrays, open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|n_prim||number of primary inductor coupling turns||-||100||required
|-
|n_sec||number of full-winding secondary inductor coupling turns||-||100||required
|-
|area||cross-sectional area||m2||1e-5||
|-
|length||core length||m||0.01||
|-
|}

==Chip Resistor==
[[File:G94.png]]

This is a four-pin, two-port device that models a semiconductor chip resistor. The resistor is made of a thin film deposited between two Ohmic pads on a dielectric substrate.

Model Identifier: chip resistor

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|w||thin film width||mm||1.0||
|-
|l||thin film length||mm||2.0||
|-
|d||thin film thickness||mm||0.1||
|-
|sigma||thin film conductivity||S/m||5.0||
|-
|wp||Ohmic pad width||mm||2.0||
|-
|h||substrate thickness||mm||1.6||
|-
|er||substrate relative permittivity||-||2.2||
|-
|}

== Clocked Sample-and-Hold Block ==

[[File:GK12.png]]

This device samples its input signal at a specified sampling period and holds the values of each sample during each clock cycle. The output signal is a quantized version of the input signal.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|T||sampling period||sec||1||required
|-
|duty_cycle||sampling pulse duty cycle||-||0.1||
|-
|Tmax||signal period or maximum duration||sec||10||
|-
|}

==Coaxial Line==
[[File:G91.png]]

This is a four-pin, two-port device that models a coaxial line segment with a dielectric core.

Model Identifier: coaxial-line

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|r_in||inner conductor radius||mm||5.0||
|-
|r_out||outer conductor radius||mm||10.0||
|-
|er||core dielectric relative permittivity||-||2.2||
|-
|len||coaxial line length||mm||10.0||
|-
|sigma||metal conductivity||S/m||1e10||
|-
|tand||core dielectric loss tangent||-||0||
|-
|}

==Coaxial Step in Inner Conductor==
[[File:G112.png]]

This is a four-pin, two-port device that models a step in inner conductor radius between two coaxial lines of equal outer conductor radius with a dielectric core.

Model Identifier: coaxial-innerstep

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|r_in1||smaller inner conductor radius||mm||2.0||
|-
|r_in2||larger inner conductor radius||mm||4.0||
|-
|r_out||outer conductor radius||mm||5.0||
|-
|er||core dielectric relative permittivity||-||2.2||
|-
|}

==Coaxial Step in Outer Conductor==
[[File:G113.png]]

This is a four-pin, two-port device that models a step in outer conductor radius between two coaxial lines of equal inner conductor radius with a dielectric core.

Model Identifier: coaxial-outerstep

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|r_in||inner conductor radius||mm||2.0||
|-
|r_out1||smaller outer conductor radius||mm||4.0||
|-
|r_out2||larger outer conductor radius||mm||6.0||
|-
|er||core dielectric relative permittivity||-||2.2||
|-
|}

== Comparator with Hysteresis ==

[[File:GL52.png]]

This device is a 3-pin two-signal voltage comparator block with hysteresis effect. If the output voltage is at its low level and you increase Δv = (vpos - vneg), the output switches to the high level as soon as Δv > V_hys. If the output voltage is at its high level and you decrease Δv = (vpos - vneg), the output switches to the low level as soon as Δv < -V_hys.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|V_hi||high output voltage level||V||5||
|-
|V_lo||high output voltage level||v||100m||
|-
|V_hys||hysteresis voltage width||V||50m||
|-
|}

==Complex Impedance==
[[File:G73.png]]

This is a two-pin, one-port device that models a generic impedance with both real and imaginary parts. It can be used in place of a one-port device when input impedance data are available rather than s11-parameter values.

Model Identifier: impedance

Parameters:

A table of z11-parameter values as a function of frequency

== Complex Modulus Block ==

[[File:GL59.png]]

This 3-pin device assumes its first and second input signals to be the real and imaginary parts of a complex signal and sends the absolute value of such a complex signal to the output with a default unity gain.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|gain||gain||-||1.0||
|-
|}

==Conductor-Backed CPW Line==
[[File:GK65.png]]

This is a four-pin, two-port device that models a conductor-backed coplanar waveguide (CPW) line segment on a single-layer dielectric substrate with a ground plane.

Model Identifier: cbcpw-line

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|w||slot width||mm||2.0||
|-
|s||center strip width||mm||2.0||
|-
|h||substrate thickness||mm||1.6||
|-
|er||substrate relative permittivity||-||2.2||
|-
|len||cpw line length||mm||10.0||
|-
|}

==Controlled Limiter Block==

[[File:G35.png]]

The Controlled Limiter is a single-input, single-output block similar to the Gain Block. However, the output of the Controlled Limiter function is restricted to the range specified by the output lower and upper limits. This model operates in DC, AC and Transient analysis modes. Note that the limit range is the value below the Upper Limit Control input signal (CNTL_UPPER) and above the Lower Limit Control input signal (CNTL_LOWER) at which smoothing of the output signal begins. A minimum positive value of voltage difference must exist between the CNTL_UPPER and CNTL_LOWER inputs at all times. The main difference between the Controlled Limiter Block and the Limiter Block is that the former's limits are set by input control voltages, while the latter's limits are set as numerical parameters.

Also note that the Controlled Limiter function examines the input values of CNTL_UPPER and CNTL_LOWER to make sure that they are spaced far enough apart to guarantee the existence of a linear range between them. The range is calculated as the difference between (cntl_upper - upper_delta - limit_range) and (cntl_lower
+ lower_delta + limit_range) and must be greater than or equal to zero. When the limit_range is specified as a fractional value, the limit_range used in the above is taken as the calculated fraction of the difference between cntl_upper and cntl_lower. Still, the potential exists for too great a limit_range value to be specified for proper operation, in which case the model will return an error message.

Model Identifier: climit

Netlist Format:

A<device_name> <in_pin> <cntl_upper_pin> <cntl_lower_pin> <out_pin> <model_name>

.model <model_name> climit {<param1 = value> < param2 = value> ...}

Example:

A1 1 2 3 4 controlled_limit_block

.model controlled_limit_block climit in_offset = 0.0 gain = 1.0 upper_delta = 0.0 lower_delta = 0.0

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|in_offset||input offset||V||0.0||
|-
|gain||gain||-||1.0||
|-
|upper_delta||output upper delta||-||0.0||
|-
|lower_delta||output lower delta||-||0.0||
|-
|limit_range||upper and lower sm. Range||-||1.0e-6||
|-
|fraction||smoothing %/abs switch||-||False||
|-
|}

==Controlled One-Shot==

[[File:G38.png]]

This is an eight-terminal function generator with a single pulse output. The pulse width is controlled by an input voltage. The functional dependency of the output pulse width on the input voltage is piecewise linear and is defined as a two-dimensional table similar to a piecewise linear (PWL) controlled source. In the "pulse width vs. voltage" curve, the array "cntl_array" defines voltage values in Volts and the array "pw_array" defines the corresponding pulse width values in seconds.

The generation of the output pulse is triggered either on the rising or falling edge of a clock input.

Model Identifier: oneshot

Netlist Format:

A<device_name> %vd(<clk_pin> <clk_ref_pin>) %vd(<cntl_in_pin> <cntl_in_ref_pin>)
%vd(<clear_pin> <clear_ref_pin>)
%vd(<out_pin> <out_ref_pin>) <model_name>

.model <model_name> oneshot {<param1 = value> < param2 = value> ...}

Example:

A1 %vd(1 5) %vd(2 6) %vd(3 7) %vd(4 8) one_shot

.model one_shot oneshot cntl_array = [0.0] pw_array = [1u] rise_time = 1n

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|Clk_trig||clock trigger value||V||0.5||
|-
|Pos_edge_trig||positive/negative edge trigger switch||-||True||
|-
|Cntl_array||control array||V||[0.0]||required
|-
|Pw_array||pulse width array||sec||[1u]||required
|-
|Out_low||output low value||V||0.0||
|-
|Out_high||output high value||V||1.0||
|-
|Delay||output delay from trigger||sec||1.0e-9||
|-
|Rise_time||output rise time||sec||1.0e-9||
|-
|Fall_time||output fall time||sec||1.0e-9||
|-
|}

==Controlled Sine Wave Oscillator==

[[File:G24.png]]

This is a four-terminal function generator with a sinusoidal wave output, whose frequency is controlled by an input voltage. The functional dependency of the output frequency on the input voltage is piecewise linear and is defined as a two-dimensional table similar to a piecewise linear (PWL) controlled source. In the "frequency vs. voltage" curve, the array "cntl_array" defines voltage values in Volts and the array "freq_array" defines the corresponding frequencies in Hz.
This function has parameterizable values of low and high peak output voltage.

Model Identifier: sine

Netlist Form:

A<device_name> %vd(<cntl_in_pin> <cntl_in_ref_pin>) %vd(<out_pin>
<out_ref_pin>) <model_name>

.model <model_name> sine cntl_array = [<value1> <value2>]
freq_array = [<value1> <value2>] {<param1 = value> < param2 = value> ...}

Example:

A1 %vd(1 3) %vd(2 4) sine

.model sine sine cntl_array = [0 1] freq_array = [1 1000]

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|Cntl_array||control array||V||[0 1]||required
|-
|Freq_array||frequency array||Hz||[1 1000]||required
|-
|Out_low||output peak low value||V||-1.0||
|-
|Out_high||output peak high value||V||1.0||
|-
|}

==Controlled Sources==

Circuits can contain linear dependent sources characterized by one of the following equations (where g,
e, f, and h are constants representing transconductance, voltage gain, current gain, and transresistance,
respectively):

iout = g vin
     vout = e vin
     iout = f iin
     vout = h iin

For further information, refer to:

Linear Current Controlled Current Source (CCCS)

Linear Voltage Controlled Current Source (VCCS)

Linear Current Controlled Voltage Source (CCVS)

Linear Voltage Controlled Voltage Source (VCVS)

==Controlled Square Wave Oscillator==

[[File:G25.png]]

This is a four-terminal function generator with a square wave output, whose frequency is controlled by an input voltage. The functional dependency of the output frequency on the input voltage is piecewise linear and is defined as a two-dimensional table similar to a piecewise linear (PWL) controlled source. In the "frequency vs. voltage" curve, the array "cntl_array" defines voltage values in Volts and the array "freq_array" defines the corresponding frequencies in Hz.

Model Identifier: square

Netlist Format:

A<device_name> %vd(<cntl_in_pin> <cntl_in_ref_pin>) %vd(<out_pin>
<out_ref_pin>) <model_name>

.model <model_name> square cntl_array = [<value1> <value2>] freq_array = [<value1> <value2>] {<param1 = value> < param2 = value> ...}

Example:

A1 %vd(1 3) %vd(2 4) square

.model square square cntl_array = [0 1] freq_array = [1 1000]

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|Cntl_array||control array||V||[0 1]||required
|-
|Freq_array||frequency array||Hz||[0 1000]||required
|-
|Out_low||output peak low value||V||-1.0||
|-
|Out_high||output peak high value||V||1.0||
|-
|Duty_cycle||Duty cycle||-||0.5||
|-
|Rise_time||Output rise time||sec||1.0e-9||
|-
|Fall_time||Output fall time||sec||1.0e-9||
|-
|}

==Controlled Triangle Wave Oscillator==

[[File:G26.png]]

This is a four-terminal function generator with a triangle wave output, whose frequency is controlled by an input voltage. The functional dependency of the output frequency on the input voltage is piecewise linear and is defined as a two-dimensional table similar to a piecewise linear (PWL) controlled source. In the "frequency vs. voltage" curve, the array "cntl_array" defined voltage values in Volts and the array "freq_array" defines the corresponding frequencies in Hz.

Model Identifier: triangle

Netlist Format:

A<device_name> %vd(<cntl_in_pin> <cntl_in_ref_pin>) %vd(<out_pin>
<out_ref_pin>) <model_name>

.model <model_name> tirangle cntl_array = [<value1> <value2>]
freq_array = [<value1> <value2>]{<param1 = value> < param2 = value> ...}

Example:

A1 %vd(1 4) %vd(2 3) triangle

.model triangle triangle cntl_array = [0 1] freq_array = [1 1000]

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|Cntl_array||control array||V||[0 1]||required
|-
|Freq_array||frequency array||Hz||[0 1000]||required
|-
|Out_low||output peak low value||V||-1.0||
|-
|Out_high||output peak high value||V||1.0||
|-
|Rise_duty||Rise time duty cycle||0.5||
|-
|}

==Coplanar Strips (CPS) Line==
[[File:GK63.png]]

This is a four-pin, two-port device that models a coplanar strips (CPS) line segment on a single-layer conductor-backed dielectric substrate.

Model Identifier: cps-line

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|w||strip width||mm||2||
|-
|w||strip spacing||mm||2||
|-
|h||substrate thickness||mm||1.6||
|-
|er||substrate relative permittivity||-||2.2||
|-
|len||line segment length||m||10||
|-
|}

==Coplanar Waveguide (CPW) Line==
[[File:G88.png]]

This is a four-pin, two-port device that models a coplanar waveguide (CPW) line segment on a single-layer dielectric substrate without a ground backing.

Model Identifier: cpw-line

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|w||slot width||mm||2.0||
|-
|s||center strip width||mm||2.0||
|-
|h||substrate thickness||mm||1.6||
|-
|er||substrate relative permittivity||-||2.2||
|-
|len||cpw line length||mm||10.0||
|-
|sigma||metal conductivity||S/m||1e10||
|-
|tand||substrate dielectric loss tangent||-||0||
|-
|t||metallization thickness||mm||0||
|-
|}

==Coupled Microstrip Lines==
[[File:G85.png]]

This is an eight-pin, four-port device that models two parallel coupled microstrip line segments on a single-layer conductor-backed dielectric substrate.

Model Identifier: coupled-microstrips

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|w||microstrip width||mm||4.8||
|-
|s||microstrip spacing||mm||5.0||
|-
|h||substrate thickness||mm||1.6||
|-
|er||substrate relative permittivity||-||2.2||
|-
|len||microstrip length||mm||10.0||
|-
|}

==Coupled Striplines==
[[File:G87.png]]

This is an eight-pin, four-port device that models two side-by-side parallel coupled stripline segments sandwiched between two parallel plates with a dielectric spacer. In this model, the two striplines are placed at the center of the dielectric with equal distances from the top and bottom plates.

Model Identifier: coupled-striplines

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|w||microstrip width||mm||4.8||
|-
|s||microstrip spacing||mm||5.0||
|-
|b||parallel plate spacing||mm||3.2||
|-
|er||substrate relative permittivity||-||2.2||
|-
|len||stripline length||mm||10.0||
|-
|}

==Covered CPW Line==
[[File:GK66.png]]

This is a four-pin, two-port device that models a covered coplanar waveguide (CPW) line segment on a single-layer dielectric substrate without a ground backing but with a metal cover plate.

Model Identifier: cpw-covered

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|w||slot width||mm||2.0||
|-
|s||center strip width||mm||2.0||
|-
|h||substrate thickness||mm||1.6||
|-
|er||substrate relative permittivity||-||2.2||
|-
|hc||cover height||mm||10||
|-
|len||cpw line length||mm||10||
|-
|}

==Covered Conductor-Backed CPW Line==
[[File:GK67.png]]

This is a four-pin, two-port device that models a covered conductor-backed coplanar waveguide (CPW) line segment on a single-layer dielectric substrate with both a ground plane and a metal cover plate.

Model Identifier: cbcpw-line

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|w||slot width||mm||2.0||
|-
|s||center strip width||mm||2.0||
|-
|h||substrate thickness||mm||1.6||
|-
|er||substrate relative permittivity||-||2.2||
|-
|hc||cover height||mm||10||
|-
|len||cpw line length||mm||10||
|-
|}

==Covered Microstrip Line==
[[File:GK60.png]]

This is a four-pin, two-port device that models a covered microstrip line segment on a single-layer conductor-backed dielectric substrate.

Model Identifier: microstrip-covered

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|w||microstrip width||mm||4.8||
|-
|h||substrate thickness||mm||1.6||
|-
|er||substrate relative permittivity||-||2.2||
|-
|h||cover height||mm||10||
|-
|len||microstrip length||m||10||
|-
|}

==CPW Gap==
[[File:G110.png]]

This is a four-pin, two-port device that models a gap-in-width transition between two coplanar waveguide (CPW) lines on a single-layer dielectric substrate without a ground backing.

Model Identifier: cpw-gap

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|w||slot width||mm||2.0||
|-
|s||center strip width||mm||2.0||
|-
|g||center strip gap spacing||mm||2.0||
|-
|h||substrate thickness||mm||1.6||
|-
|er||substrate relative permittivity||-||2.2||
|-
|}

==CPW Open End==
[[File:G108.png]]

This is a two-pin, one-port device that models a coplanar waveguide (CPW) line segment terminated in a open end on a single-layer dielectric substrate without a ground backing.

Model Identifier: cpw-open

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|w||slot width||mm||2.0||
|-
|s||center strip width||mm||2.0||
|-
|h||substrate thickness||n mm||1.6||
|-
|er||substrate relative permittivity||-||2.2||
|-
|len||cpw line length||mm||10.0||
|-
|}

==CPW Short End==
[[File:G109.png]]

This is a two-pin, one-port device that models a coplanar waveguide (CPW) line segment terminated in a short end on a single-layer dielectric substrate without a ground backing.

Model Identifier: cpw-short

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|w||slot width||mm||2.0||
|-
|s||center strip width||mm||2.0||
|-
|h||substrate thickness||mm||1.6||
|-
|er||substrate relative permittivity||-||2.2||
|-
|len||cpw line length||mm||10.0||
|-
|}

==CPW Step==
[[File:G111.png]]

This is a four-pin, two-port device that models a step-in-width transition between two coplanar waveguide (CPW) lines of unequal widths on a single-layer dielectric substrate without a ground backing.

Model Identifier: cpw-step

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|w||narrower slot width||mm||2.0||
|-
|s||wider center strip width||mm||2.0||
|-
|s||narrower center strip width||mm||1.0||
|-
|h||substrate thickness||mm||1.6||
|-
|er||substrate relative permittivity||-||2.2||
|-
|}

==CPW With a Superstrate==
[[File:GK68.png]]

This is a four-pin, two-port device that models a coplanar waveguide (CPW) line segment on a single-layer dielectric substrate without a ground backing but with a single-layer dielectric superstrate.

Model Identifier: cpw-superstrate

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|w||slot width||mm||2.0||
|-
|s||center strip width||mm||2.0||
|-
|h||substrate thickness||mm||1.6||
|-
|er||substrate relative permittivity||-||2.2||
|-
|hs||superstrate height||mm||1.6||
|-
|ers||superstrate relative permittivity||-||2.2||
|-
|len||cpw line length||mm||10||
|-
|}

== Crystal ==

[[File:GK78.png]]

This is a 2-pin parameterized crystal device.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|CM||motional capacitance||F||10f||
|-
|C0||shunt capacitance||F||1p||
|-
|RM||motional resistance||Ohms||100||
|-
|LM||motional inductance||H||100m||
|-
|}

==Current Limiter Block==

[[File:GL43.png]]

The Current Limiter Block models the behavior of an operational amplifier or comparator device at a high level of abstraction. All of its pins act as inputs; three of the four also act as outputs. The model takes as input a voltage value from the “in” connector. It then applies an offset and a gain, and derives from it an equivalent internal voltage (veq), which it limits to fall between pos pwr and neg pwr. If veq is greater than the output voltage seen on the “out” connector, a sourcing current will flow from the output pin. Conversely, if the voltage is less than vout, a sinking current will flow into the output pin. Depending on the polarity of the current flow, either a sourcing or a sinking resistance value (r_out_source, r_out_sink) is applied to govern the vout/i_out relationship. The chosen resistance will continue to control the output current until it reaches a maximum value specified by either i_limit_source or i_limit_sink. The latter mimics the current limiting behavior of many operational amplifier output stages. During all operation, the output current is reflected either in the pos_pwr connector current or the neg_pwr current, depending on the polarity of i_out. Thus, realistic power consumption as seen in the supply rails is included in the model. The user-specified smoothing parameters relate to model operation as follows: v_pwr_range controls the voltage below vpos_pwr and above vneg_pwr inputs beyond which veq [= gain * (vin + voffset)] is smoothed; i_source_range specifies the current below i_limit_source at which smoothing begins, as well as specifying the current increment above i_out=0.0 at
which i_pos_pwr begins to transition to zero; i_sink_range serves the same purpose with respect to i_limit_sink and i_neg_pwr that i_source_range serves for i_limit_source & i_pos_pwr; r_out_domain specifies the incremental value above and below (veq-vout)=0.0 at which r_out will be set to r_out_source and r_out_sink, respectively. For values of (veq-vout) less than r_out_domain and greater than -r_out_domain, r_out is interpolated smoothly between r_out_source & r_out_sink.

Model Identifier: ilimit

Netlist Format:

A<device_name> <in_pin> <pos_pwr_pin> <neg_pwr_pin> <out_pin> <model_name>

.model <model_name> ilimit {<param1 = value> < param2 = value> ...}

Example:

A1 1 2 3 4 amp

.model amp ilimit in_offset=0.0 gain=16.0 r_out_source=1.0 r_out_sink=1.0 i_limit_source=1e-3 i_limit_sink=10e-3 v_pwr_range=0.2 i_source_range=1e-6 i_sink_range=1e-6 r_out_domain=1e-6

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|in_offset||input offset||V||0.0||
|-
|gain||gain||-||1.0||
|-
|r_out_source||sourcing resistance||Ω||1.0||
|-
|r_out_sink||sinking resistance||Ω||1.0||
|-
|i_limit_source||current sourcing limit||A||10m||
|-
|i_limit_sink||current sinking limit||A||10m||
|-
|v_pwr_range||power smoothing range||V||1u||
|-
|i_source_range||current sourcing smoothing range||A||1n||
|-
|i_sink_range||current sinking smoothing range||A||1n||
|-
|r_out_domain||output resistance smoothing domain||Ω||1n||
|-
|}

==Current Noise Source==

[[File:GL16.png]]

This is a current noise generator characterized by a spectral density and corner frequency. You have to click the {{key|Edit Model...}} button to access the [[parameters]] of this device.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|En||noise current||A/√Hz||1p||required
|-
|freq||noise corner frequency||Hz||100||required
|-
|}

==Current Source==

[[File:G17B.png]]

Current source has a DC value, a transient behavior, an AC behavior, and distortion parameters. The transient type, AC parameters, and distortion parameters are defined on the first tab of the source's property dialog. The transient expression can be a pulse, sinusoid, exponential, or piecewise linear. The DC value of a current source is its initial transient value. For a source with a sinusoidal transient behavior, for example, the DC value will be equal to its transient offset current. The AC parameters are magnitude and phase. These are used during the AC Frequency Sweep analysis. The distortion parameters, two sets of magnitude and phase, are used during the distortion analysis. The AC and distortion parameters are defined on the second tab of the source's property dialog.

==Current-Controlled Switch==

[[File:G20.png]]

Switches are devices that exhibit high resistance when open (OFF state) and low resistance when closed (ON state). The switch model allows an almost ideal switch to be specified. With careful selection of the on and off resistances, they can effectively represent zero and infinite resistances in comparison to other circuit elements, while sustaining the model condition of a positive, finite value.

There are two versions of Current-Controlled Switch: two-terminal and four-terminal. For the two-terminal device, you must specify the name of the controlling Ammeter or voltage source, as well as the turn-on and turn-off currents in Amperes and on and off resistance values in Ohms. The four-terminal device already provides nodes for a controlling ammeter, and you just specify the rest of [[parameters]]. When the current through the switch or controlling device is greater or equal to the turn-on current, the switch closes. When the current through the switch or controlling device is less than or equal to the turn off current, the switch opens.

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|I_ON||turn-on current||A||0.0||
|-
|I_OFF||turn-off current||A||0.0||
|-
|RON||closed resistance||Ohms||1.0||
|-
|ROFF||open resistance||Ohms||1/GMIN||
|-
|}

==D Flip-Flop==

[[File:G52.png]]

The digital D-type flip-flop is a one-bit, edge-triggered storage element which stores data whenever the clock (CLK) input line transitions from 0 (low) to 1 (high). In addition, there are asynchronous set and reset signals, which are independent of the clock. When SET = RESET = 0, the data on the D line is transferred to the output Q on the rising edge of the clock. The combination SET = 1 and RESET = 0, causes Q = 1. The combination SET = 0 and RESET = 1 causes Q = 0. The combination SET = RESET = 1 is illegal and is resolved by setting both outputs Q and Q_bar to 1.

Truth Table:

<table>
<tr>
<td>
{| class="wikitable"
|-
! CLK !! D !! Q !! Notes
|-
|[[File:NonRising.png]] || X || Qprev || Hold State
|-
|[[File:Rising.png]] || 0 || 0 || Data Transfer
|-
|[[File:Rising.png]] || 1 || 1 || Data Transfer
|-
|}
</td>
</tr>
</table>

==D Latch==

[[File:G54.png]]

The digital D-type latch is a one-bit, level-sensitive storage element which outputs the value on the data (D) line whenever the enable (EN) input line is 1 (high). The value on the data line is stored, i.e., held on the output (Q) line whenever the enable (EN) line is 0 (low). In addition, there are set and reset signals, which are independent of the enable line. When SET = RESET = 0, the data on the D line is transferred to the output Q whenever EN = 1. The combination SET = 1 and RESET = 0, causes Q = 1. The combination SET = 0 and RESET = 1 causes Q = 0. The combination SET = RESET = 1 is illegal and is resolved by setting both outputs Q and Q_bar to 1.

Truth Table:

<table>
<tr>
<td>
{| class="wikitable"
|-
! EN !! D !! Q !! Notes
|-
|0 || X || Qprev || Hold State
|-
|1 || 0 || 0 || Reset
|-
|1 || 1 || 1 || Set
|-
|}
</td>
</tr>
</table>

==Darlington Pair==

[[File:GK108.png]]

A Darlington pair is a three-pin device that consists of two interconnected BJT transistors of the same type. The collectors of two transistors are connected together to provide the "Collector" pin of the pair. The base of the first BJT acts the "Base" pin of the pair. The emitter of the first BJT is internally connected to the base of the second BJT. The emitter of the second BJT acts as the "Emitter" pin of the pair. There are two types of Darlington pair: NPN and PNP. The parameterized generic Darlington pair also contains a diode connected between the collector and emitter pin as well as two base-emitter resistors, one across each BJT.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|is_bjt||bjt saturation current||A||1.0e-12||
|-
|bf_bjt||bjt forward beta||-||150||
|-
|nf_bjt||bjt forward emission coefficient||-||1||
|-
|ise_bjt||B-E leakage saturation current||A||0||
|-
|ne_bjt||B-E leakage emission coefficient||-||1||
|-
|br_bjt||ideal maximum reverse beta||-||1||
|-
|nr_bjt||reverse current emission coefficient||-||1||
|-
|isc_bjt||B-C leakage saturation current||A||0||
|-
|nc_bjt||B-C leakage emission coefficient||-||1||
|-
|rb_bjt||zero bias base resistance||Ohms||0||
|-
|irb_bjt||current where base resistance falls halfway to minimum value||A||inf||
|-
|rbm_bjt||minimum base resistance at high currents||ohms||0||
|-
|re_bjt||emitter resistance||Ohms||0||
|-
|rc_bjt||collector resistance||Ohms||0||
|-
|cje_bjt||B-E zero bias depletion capacitance||F||0||
|-
|vje_bjt||B-E built-in potential||V||0.75||
|-
|mje_bjt||B-E junction grading coefficient||-||0.33||
|-
|cjc_bjt||B-C zero bias depletion capacitance||F||0||
|-
|vjc_bjt||B-C built-in potential||V||0.75||
|-
|mjc_bjt||B-C junction exponential factor||-||0.33||
|-
|tf_bjt||ideal forward transit time||sec||0||
|-
|tr_bjt||ideal reverse transit time||sec||0||
|-
|is_d||diode saturation current||A||1.0e-12||
|-
|rs_d||diode resistance||Ohms||0||
|-
|n_d||diode emission coefficient||-||1||
|-
|cjo_d||diode junction capacitance||F||0||
|-
|vj_d||diode junction potential||V||1||
|-
|m_d||diode grading coefficient|| ||0.5||
|-
|tnom||parameter measurement temperature||deg C||27||
|-
|r1||first base-emitter resistance||Ohms||1k||
|-
|r2||second base-emitter resistance||Ohms||1k||
|-
|}

== DC Bias Sources Vcc, Vee, Vdd, Vss ==

[[File:GL12.png]]

These are simple 1-pin DC voltage sources. Vcc and Vdd provide a positive voltage, while Vee and Vss provide a negative voltage

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|vcc||bias voltage||V||+15||required
|-
|vee||bias voltage||V||-15||required
|-
|vdd||bias voltage||V||+15||required
|-
|vss||bias voltage||V||-15||required
|-
|}

== Delta Modulator Block==

[[File:GL95.png]]

This device samples an input signal at the specified sampling period and generates a Delta modulated output signal from it.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|r_in||input resistance||Ω||1G||
|-
|r_out||output resistance||Ω||1u||
|-
|T||sampling period||sec||1||
|-
|duty_cycle||sampling pulse duty cycle||-||0.01||
|-
|}

== Delta-Sigma Modulator Block==

[[File:GL96.png]]

This device samples an input signal at the specified sampling period and generates a Delta-Sigma modulated output signal from it.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|r_in||input resistance||Ω||1G||
|-
|r_out||output resistance||Ω||1u||
|-
|T||sampling period||sec||1||
|-
|duty_cycle||sampling pulse duty cycle||-||0.01||
|-
|}

== Differential Phase Shift-Keying Modulator Block==

[[File:GL94.png]]

This device takes a digital input like a binary sequence and generates a DPSK modulated output signal with two specified carrier phase values. It also requires a digital clock input for synchronization.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|r_out||output resistance||Ω||1u||
|-
|phi_lo||low carrier phase value||rad||0||
|-
|phi_hi||high carrier phase value||rad||π||
|-
|fc||carrier frequency||Hz||1Meg||
|-
|ac||carrier peak amplitude||V||1.0||
|-
|}

==Differentiator Block==

[[File:G31.png]]

The Differentiator Block approximates the time derivative of an input signal by calculating the incremental
slope of that signal since the previous time point. Gain and output offset parameters are also included
to allow for tailoring of the required signal. Output upper and lower limits are also included to prevent
convergence erros resulting from excessively large output values. The incremental value of output below
the output_upper_limit and above the output_lower_limit at which smoothing begins is specified via the
limit_range parameter. In AC analysis, the value returned is equal to the radian frequency of analysis
multiplied by the gain.

Model Identifier: d_dt

Netlist Format:

A<device_name> <in_pin> <out_pin> <model_name>

.model <model_name> d_dt out_lower_limit = <value> out_upper_limit = <value> {<param1 = value> < param2 = value> ...}

Example:

A1 1 2 differentiator

.model differentiator d_dt out_lower_limit = -1t out_upper_limit = 1t

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|gain||gain||-||1.0||
|-
|out_offset||output offset||V||0.0||
|-
|out_lower_limit||output lower limit||V||-1t||required
|-
|out_upper_limit||output upper limit||V||1t||required
|-
|limit_range||upper and lower limit smoothing range||-||1.0e-6||
|-
|}

== Digital Integrator Block ==

[[File:GK16.png]]

This device models a digital integrator with a Z-transform of -z-1/2, which is equivalent to a delay line with a delay of half the sampling period

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|T||sampling period||sec||1||required
|-
|}

==Digital-to-Analog Converter (DAC) Bridge==

[[File:GK43.png]]

The DAC Bridge takes a digital value from a digital node and can only be eiter "0", "1",
or "U". It then outputs the value "out_low", "out_high" or "out_udndef",
or ramps linearly toward one of these "final" values from its curent analog output level. This
ramping speed depends on the values of "t_rise" and "t_fall".

Model Identifier: dac_bridge

Netlist Format:

A<device_name> [<in_pin> {<in2_pin>> ...}] [<out_pin> {<out2_pin> ...}] <model_name>

.model <model_name> dac_bridge {<param1 = value> < param2 = value> ...}

Example:

A [1] [2] dac_bridge

.model dac_bridge dac_bridge out_low = 0 fall_delay = 1n

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|out_low||analog output for 0 digital input||V||0||required
|-
|out_high||analog output for 1 digital input||V||1||required
|-
|out_undef||analog output for undefined digital input||V||0.5||required
|-
|input_load||capacitive input load||F||1p||
|-
|t_rise||L-to-H delay time||sec||1n||
|-
|t_fall||H-to-L delay time||sec||1n||
|-
|}

==Diode==

[[File:G9.png]]

Diodes allow current flow only in one direction, following their symbol's arrow, and thus can be used as simple solid
state switches in AC circuits.

The standard device parameters are AREA, OFF, IC, and T. They are described below:

{| class="wikitable"
|-
|AREA||area factor (optional) (If not specified, the default value is 1.0.)
|-
|OFF||initial condition for the DC analysis (optional)
|-
|IC||initial condition (optional) (Used when a transient analysis is desired, which starts from other than the quiescent operating point.)
|-
|T||operating temperature of the device (optional)
|-
|}

The process models can be either junction diodes or Schottky barrier diodes. Area factor scales the model parameters
IS, RS, CJO, and IBV. VD is the initial voltage, and TEMP is the overriding temperature. Descriptions of the process model parameters are given in the following table:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|IS||saturation current||A||1e-14||
|-
|TNOM||parameter measurement temperature||deg C||27||
|-
|RS||ohmic resistance||Ohms||0||
|-
|N||emission coefficient||-||1||
|-
|TT||transit-time||sec||0||
|-
|CJO||zero-bias junction capacitance||F||0||
|-
|VJ||junction potential||V||1||
|-
|M||grading coefficient||-||0.5||
|-
|EG||activation energy||eV||1.11||
|-
|XTI||saturation current temp. exp.||-||3.0||
|-
|KF||flicker noise coefficient||-||0||
|-
|AF||flicker noise exponent||-||1||
|-
|FC||forward bias junction fit parameter||-||0.5||
|-
|BV||reverse breakdown voltage||V||inf||
|-
|IBV||current at breakdown voltage||A||1e-3||
|-
|}

==Diode Bridge==

[[File:GK107.png]]

This four-pin device is a bridge configuration of four generic diodes.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|IS||saturation current||A||1e-14||
|-
|RS||ohmic resistance||Ohms||0||
|-
|N||emission coefficient||-||1||
|-
|TT||transit-time||sec||0||
|-
|CJO||zero-bias junction capacitance||F||10p||
|-
|VJ||junction potential||V||1||
|-
|M||grading coefficient||-||0.5||
|-
|BV||reverse breakdown voltage||V||1000||
|-
|IBV||current at breakdown voltage||A||1e-3||
|-
|TNOM||parameter measurement temperature||deg C||27||
|-
|}

== Discrete Convolution Block ==

[[File:GK20.png]]

These blocks perform an N-point discrete convolution of their input signals. Both of the input signals x(t) and h(t) are sampled at the specified sampling period. The samples of x(t) are then shifted in time for the convolution. The output signal is a pulse train of the same period with the specified duty cycle. The input signal of these block can be either continuous-time signals or pulse trains of the specified period.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|T||sampling period||sec||1||required
|-
|rise_time||window rise time ||sec||0||
|-
|fall_time||window fall time ||sec||0||
|-
|duty_cycle||output pulse duty cycle||-||0.1||
|-
|gain||output gain||-||1||
|-
|}

== Discrete Fourier Transform (DFT) Block ==

[[File:GK19.png]]

These blocks perform an M-point discrete Fourier transform (DFT) of their input signal and then sample each period of the Fourier transform N times in the frequency domain. The output signals are two finite sequence pulse trains representing the cosine and sine DFT transforms. The input signal of these block can be either a continuous-time signal or a pulse train of the specified period.

There are ten DFT blocks for M = 5, 6, 7, 8, 9, 10, 12, 16, 32, 64. In each case, the total duration of the transform window is MT, where T is the sampling period. By default, the frequency domain sampling starts at t = MT and takes place over one spectral period equal to fs = 1/T. You can change the sampling start time by "n_delay" temporal periods. n_delay = 0 by default, but it can be either positive or negative. You can also extend spectral sampling to more than one spectral period by increasing the value of the parameter "n_dur", which has a default value of 1.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|T||sampling period||sec||1||required
|-
|N||sequence length||-||5||required
|-
|rise_time||window rise time ||sec||0||
|-
|fall_time||window fall time ||sec||0||
|-
|duty_cycle||output pulse duty cycle||-||0.1||
|-
|n_delay||number of delayed period before sampling||-||0||
|-
|n_dur||number of frequency-sampled periods||-||1||
|-
|}

== Discrete-Time Fourier Transform (DTFT) Block ==

[[File:GK18.png]]

These blocks perform an N-point discrete-time Fourier transform (DTFT) of their input signal and output the transform as two temporal voltage signals representing the cosine and sine DTFT transforms. The
The input signal of these block can be either a continuous-time signal or a pulse train of the specified period.

There are ten DTFT blocks for N = 5, 6, 7, 8, 9, 10, 12, 16, 32, 64. In each case, the total duration of the transform window is NT, where T is the sampling period.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|T||sampling period||sec||1||required
|-
|rise_time||window rise time ||sec||0||
|-
|fall_time||window fall time ||sec||0||
|-
|}

== Discrete-Time Signal Hold Block ==

[[File:GK14.png]]

This device takes a pulse train of a specified period as its input and holds the value of each pulse's amplitude during each clock cycle at the output.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|T||sampling period||sec||1||required
|-
|duty_cycle||sampling pulse duty cycle||-||0.1||
|-
|rise_time||window rise time ||sec||0||
|-
|fall_time||window fall time ||sec||0||
|-
|Tmax||signal period or maximum duration||sec||10||
|-
|}

==Divider Block==

[[File:G30.png]]

The Divider Block has two inputs. Each of the numerator and denominator inputs is added to its respective offset and then multiplied by its respective input gain (with default values of 1). Next, the loaded numerator signal is divided by the loaded denominator signal. The result is multiplied by the output gain and then added to the output offset. To avoid division by zero, the divider function sets the denominator signal greater than zero through the lower limit parameter. This limit is approached through a quadratic smoothing function, the domain of which may be specified as a fraction of the lower limit value or as an absolute value. The divider function operates in DC, AC, and Transient analysis modes. In AC analysis, however, it is important to remember that results are invalid unless the denominator input is a DC voltage.

Model Identifier: divide

Netlist Format:

A<device_name> <num_pin> <den_pin> <out_pin> <model_name>

.model <model_name> divide {<param1 = value> < param2 = value> ...}

Example:

A1 1 2 3 divider_block

.model divider_block divide den_offset = 0.0 den_gain = 1.0

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|num_offset||numerator offset||V||0.0||
|-
|num_gain||numerator gain||-||1.0||
|-
|den_offset||denominator offset||V||0.0||
|-
|den_gain||denominator gain||-||1.0||
|-
|den_lower_limit||denominator lower limit||V||1.0e-10||
|-
|den_domain||denominator smoothing domain||-||1.0e-10||
|-
|fraction||smoothing fraction/absolute value switch||-||False||
|-
|out_gain||output gain||-||1.0||
|-
|out_offset||output offset||V||0.0||
|-
|}

==Double-Layer CPW Line==
[[File:GK69.png]]

This is a four-pin, two-port device that models a coplanar waveguide (CPW) line segment on a double-layer dielectric substrate without a ground backing.

Model Identifier: cpw-doublelayer

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|w||slot width||mm||2.0||
|-
|s||center strip width||mm||2.0||
|-
|h1||lower layer substrate thickness||mm||1.6||
|-
|er1||lower layer substrate relative permittivity||-||2.2||
|-
|h2||upper layer substrate thickness||mm||1||
|-
|er2||upper layer substrate relative permittivity||-||3.0||
|-
|len||cpw line length||mm||10||
|-
|}

==Doubly Center-Tapped Ferrite Core Transformer==

[[File:GK98.png]]

This six-pin four-port device models a doubly center-tapped physical transformer with a magnetic ferrite core. Its model is based on XSPICE's magnetic core and inductive coupling models. For this device you need to specify physical parameters like cross sectional area, core length and number of primary and secondary turns. The physical model of the magnetic device is defined by two vectors: magnetic field intensity H in A/m and magnetic flux density B (also known as magnetic induction) in Tesla. The default array values are:

H_array = [-250 -100 -50 -37.5 -25 -12.5 0 12.5 25 37.5 50 100 250]

B_array = [-0.375 -0.36 -0.32 -0.29 -0.24 -0.15 0 0.15 0.24 0.29 0.32 0.36 0.375]

To change the value of H/B arrays, open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|n_prim||number of full-winding primary inductor coupling turns||-||100||required
|-
|n_sec||number of full-winding secondary inductor coupling turns||-||100||required
|-
|area||cross-sectional area||m2||1e-5||
|-
|length||core length||m||0.01||
|-
|}

== DPDT Switch ==

[[File:GK74.png]]

This is an 8-pin device that models a double-pole double-throw switch. It has two input signals and four output pins. When the control voltage is at the high state, the first and second input voltages are transferred to the first and third output pins, respectively. When the control voltage is at the low state, the first and second input voltages are transferred to the second and fourth output pins, respectively.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|von||turn-on voltage||V||3.3||
|-
|voff||turn-off voltage||V||0.3||
|-
|vt||threshold voltage||V||1.0||
|-
|ron||on resistance||Ohms||1.0||
|-
|roff||off resistance||Ohms||1Gig||
|-
|}

== DPST Switch ==

[[File:GK73.png]]

This is a 6-pin device that models a double-pole single-throw switch. It has two input signals and two output signals. When the switch on, the first and second input voltages are transferred to the first and second output pins, respectively. When the switch is off, the output pin do not receive any input signals.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|von||turn-on voltage||V||3.3||
|-
|voff||turn-off voltage||V||0.3||
|-
|vt||threshold voltage||V||1.0||
|-
|ron||on resistance||Ohms||1.0||
|-
|roff||off resistance||Ohms||1Gig||
|-
|}

==Ferrite Core Transformer==

[[File:GK95.png]]

This four-pin two-port device models a physical transformer with a magnetic ferrite core. Its model is based on XSPICE's magnetic core and inductive coupling models. For this device you need to specify physical parameters like cross sectional area, core length and number of primary and secondary turns. The physical model of the magnetic device is defined by two vectors: magnetic field intensity H in A/m and magnetic flux density B (also known as magnetic induction) in Tesla. The default array values are:

H_array = [-250 -100 -50 -37.5 -25 -12.5 0 12.5 25 37.5 50 100 250]

B_array = [-0.375 -0.36 -0.32 -0.29 -0.24 -0.15 0 0.15 0.24 0.29 0.32 0.36 0.375]

To change the value of H/B arrays, open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|n_prim||number of primary turns||-||100||required
|-
|n_sec||number of secondary turns||-||100||required
|-
|area||cross-sectional area||m2||1e-5||
|-
|length||core length||m||0.01||
|-
|}

== Finite Sequence Pulse Generator ==

[[File:GL18.png]]

This is a voltage source that generates a pulse train of finite duration oscillating between zero and a user defined maximum voltage level.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|T||pulse period||sec||1m||required
|-
|w||pulse width||sec||0.5m||required
|-
|n||number of pulses||-||5||
|-
|rise_time||pulse rise time||sec||0||
|-
|fall_time||pulse fall time||sec||0||
|-
|max_val||maximum output voltage level||V||1||
|-|-
|start||start time||sec||0||
|-
|}

== Finite Sequence Random Pulse Generator ==

[[File:GL31.png]]

This is a voltage source that generates a finite sequence of random pulses with a user defined number of random levels. By default, both the pulse amplitude and pulse width are randomized. You have the option to fix either of these [[parameters]].

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|period||period||sec||1||required
|-
|duty_cycle||pulse duty cycle||-||0.5||required
|-
|random_amp||1 for random amplitude, 0 otherwise||-||1||
|-
|random_wid||1 for random pulse width, 0 otherwise||-||1||
|-
|n_rand||number of random levels||-||10||
|-
|rise_time||pulse rise time||sec||0||
|-
|fall_time||pulse fall time||sec||0||
|-
|max_val||maximum output voltage level||V||1||
|-
|n_val||number of random pulses||-||5||
|-
|start||start time||sec||0||
|-
|}

== Finite Sequence Signal Sampler Block ==

[[File:GK11.png]]

This device samples its input signal during a finite time window at a specified sampling period and outputs a pulse train of finite duration with a specified duty cycle.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|T||sampling period||sec||1||required
|-
|duty_cycle||sampling pulse duty cycle||-||0.01||
|-
|rise_time||window rise time ||sec||0||
|-
|fall_time||window fall time ||sec||0||
|-
|n||number of samples||-||5||
|-
|start||start time ||sec||0||
|-
|}

==Finite-Ground Coplanar Waveguide (FGCPW) Line==
[[File:G90.png]]

This is a four-pin, two-port device that models a coplanar waveguide (CPW) line segment with top ground strips of finite width on a single-layer dielectric substrate without a ground backing.

Model Identifier: fgcpw-line

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|w||slot width||mm||2.0||
|-
|s||center strip width||mm||2.0||
|-
|g||ground strip width||mm||5.0||
|-
|h||substrate thickness||mm||1.6||
|-
|er||substrate relative permittivity||-||2.2||
|-
|len||cpw line length||mm||10.0||
|-
|}

== FM Modulated Source ==

[[File:GL24.png]]

This is a voltage source with a single-tone frequency modulated waveform. The FM modulation index MDI is defined as the ratio of maximum frequency deviation to maximum signal amplitude.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|V0||offset||V||0||
|-
|VA||amplitude||V||1||
|-
|FC||carrier frequency ||Hz||1||required
|-
|MDI||modulation index||-||0||required
|-
|FS||signal frequency ||Hz||1||required
|-
|}

==Frequency Detector Block==

[[File:GL65.png]]

This device measures the frequency of a harmonic input signal and produces a voltage proportional to the frequency in Hz at the output. It can also be used as a frequency converter.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|r_in||input resistance||Ω||1G||
|-
|r_out||output resistance||Ω||1u||
|-
|K_v||voltage conversion factor||V/Hz||1e-6||
|-
|max_in||input amplitude||V||1||
|-
|}

==Frequency Doubler Block==

[[File:GL76.png]]

This device takes a harmonic input signal and generates a harmonic output signal with twice the frequency and a user specified amplitude.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|r_in||input resistance||Ω||1G||
|-
|r_out||output resistance||Ω||1u||
|-
|max_val||output amplitude||V||1.0||
|-
|}

== Frequency Down-Converter Block==

[[File:GL80.png]]

This 3-pin device takes two harmonic input signals with different frequencies fLO and fIF and generates a harmonic output signal with a frequency equal to fRF = fLO - fIF and a user specified amplitude.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|r_in||input resistance||Ω||1G||
|-
|r_out||output resistance||Ω||1u||
|-
|max_in||peak amplitude of both inputs||V||1.0||Both inputs must have equal amplitudes.
|-
|max_out||output amplitude||V||1.0||
|-
|}

==Frequency Meter==
[[File:G114.png]]

The Frequency Meter is a four-pin shunt device that is connected in parallel with an AC source just like a voltmeter and measures the operating frequency of the AC circuit. The input pins are connected across the AC source. The voltage across the output pins is equal to the frequency of the source in Hertz within a scale factor SF. Note that the Frequency Meter is designed to work with a single-tone AC source of unit amplitude. If the amplitude of the source is not one, multiply the SF parameter by the non-unit source amplitude value. The output voltage of the Frequency Meter can be used in conjunction with linear or nonlinear dependent sources to model frequency-dependent quantities.

Model Identifier: fmeter

Parameters:

The only parameter is the scale factor SF with a default value of 1.0. Set SF = 1e-6 to read out the frequency in MHz. Set SF = 1e-9 to read out the frequency in GHz. Set SF = 6.283185 (2*pi) to read out the angular frequency ω in radian/s.

== Frequency Modulator Block==

[[File:GL88.png]]

This device takes an input signal and generates an FM modulated output signal of a specified carrier frequency with a specified maximum frequency deviation.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|r_in||input resistance||Ω||1G||
|-
|r_out||output resistance||Ω||1u||
|-
|f_del||maximum frequency deviation||Hz||500k||
|-
|fc||carrier frequency||Hz||1Meg||
|-
|ac||carrier peak amplitude||V||1||
|-
|}

== Frequency Shift-Keying Modulator Block==

[[File:GL92.png]]

This device takes a digital input like a binary sequence and generates an FSK modulated output signal with two specified carrier frequencies.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|r_out||output resistance||Ω||1u||
|-
|fc_lo||low carrier frequency||Hz||1Meg||
|-
|fc_hi||high carrier frequency||Hz||2Meg||
|-
|ac||carrier peak amplitude||V||1.0||
|-
|}

== Frequency Up-Converter Block==

[[File:GL79.png]]

This 3-pin device takes two harmonic input signals with different frequencies fLO and fIF and generates a harmonic output signal with a frequency equal to fRF = fLO + fIF and a user specified amplitude.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|r_in||input resistance||Ω||1G||
|-
|r_out||output resistance||Ω||1u||
|-
|max_in||peak amplitude of both inputs||V||1.0||both inputs must have equal amplitudes.
|-
|max_out||output amplitude||V||1.0||
|-
|}

== Fuse ==

[[File:GK76.png]]

This is a 2-pin interactive current-controlled switch. If the current passing through the fuse is less than a specified threshold current, the switch is closed. If the current exceeds the threshold level, the fuse breaks and remains open thereafter. The device's symbol changes to display its state.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|r||resistance when intact||Ohms||1.0||
|-
|i_thresh||threshold current||A||1.0||
|-
|}

==Gain Block==

[[File:G27.png]]

This model is a simple gain block with optional offsets on the input and the output. In_offset is added
to the input, the sum of which is then multiplied by the gain, and the output offset is added to produce
the final output. The gain block model will operate in DC, AC, and Transient analysis modes.

Model Identifier: gain

Netlist Format:

A<device_name> <in_pin> <out_pin> <model_name>

.model <model_name> gain {<param1 = value> < param2 = value> ...}

Example:

A1 1 2 gain_block

.model gain_block gain in_offset = 0.0 out_offset = 0.0

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|in_offset||input offset||V||0.0||
|-
|gain||gain||-||1.0||
|-
|out_offset||out_offset||V||0.0||
|-
|}

==Generalized Analog Filter Block==

[[File:GL85.png]]

This block models a generalize analog filter characterized by a rational transfer functions in the spectral domain Laplace variable s:

<math> H(s) = \frac{N(s)}{D(s)} = \frac{ \sum_{m=0}^{M} b_m s^m }{ \sum_{n=0}^{N} a_n s^n } </math>

subject to the requirement N ≥ M and aN = 1. To access the parameters of this block, you have to click the {{key|Edit Model...}} button of its property dialog.

The functionality of this block, which is native to [[RF.Spice A/D]], is very similar to the s-domain transfer function block, which is an XPSICE process model. This block does not have a denormalization frequency parameter. Therefore, at frequencies other than the unit frequency, the transfer function must be explicitly scaled. This block can be used in conjunction with both transient and AC frequency sweep tests.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|deg||highest degree of s in transfer function||-||2||required
|-
|coeff_den||denominator coefficients array: coefficients of powers of s, highest power first||-||1 0 1||required
|-
|coeff_num||numerator coefficients array: coefficients of powers of s, highest power first||-||0 0 1||required
|-
|r_in||input resistance||Ω||10G||
|-
|r_out||output resistance||Ω||1u||
|-
|}

==Generalized Digital Filter Block==

[[File:GK17.png]]

This block models a generalized digital filter characterized by a rational transfer functions in the Z-transform domain variable z:

<math> H(z) = \frac{N(z)}{D(z)} = \frac{ \sum_{m=0}^{M} b_m z^m }{ \sum_{n=0}^{N} a_n z^n } </math>

subject to the requirement N ≥ M. To access the parameters of this block, you have to click the {{key|Edit Model...}} button of its property dialog.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|deg||highest degree of z in transfer function||-||2||required
|-
|coeff_den||denominator coefficients array: coefficients of powers of (-z1/2), highest power first||-||1 0 1 0 1||required
|-
|coeff_num||numerator coefficients array: coefficients of powers of (-z1/2), highest power first||-||1 0 0 0 0||required
|-
|freq||sampling frequency||Hz||1||required
|-
|}

== Generic Bandpass Filter Block==

[[File:GL83.png]]

This device is a generic bandpass filter with user specified center frequency and bandwidth. It is based on a fifth-order Butterworth LC ladder topology.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|f0||center frequency||Hz||1Meg||
|-
|bw||bandwidth||Hz||200k||
|-
|r0||source/load resistance||Ω||50||
|-
|}

== Generic Bandstop Filter Block==

[[File:GL84.png]]

This device is a generic bandstop filter with user specified center frequency and bandwidth. It is based on a fifth-order Butterworth LC ladder topology.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|f0||center frequency||Hz||1Meg||
|-
|bw||bandwidth||Hz||200k||
|-
|r0||source/load resistance||Ω||50||
|-
|}

==Generic Bend Junction==
[[File:G65.png]]

This is a four-pin, two-port device that models a bend in a general purpose transmission line. The bend geometry and the line structure can be very complicated, and their full-wave effects can be captured by the measured or simulated S-parameter data of this device. The model may also include a certain length of the transmission line at the input and output ports.

Model Identifier: bend-junction

Parameters:

A table of s11, s21, s12 and s22-parameter values as a function of frequency

==Generic Coupled T-Lines==
[[File:G72.png]]

This is an eight-pin, four-port device that models a two parallel general purpose coupled transmission line segments. Ports 1 and 2 represent the input and output of the first T-Line. Ports 3 and 4 represent the input and output of the second coupled T-Line.

Model Identifier: coupled-lines

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|Z0e||even mode characteristic impedance||Ohms||50.0||
|-
|Z0o||odd mode characteristic impedance||Ohms||10.0||
|-
|eeff||effective permittivity||-||1.0||
|-
|len||line segment length||mm||10.0||
|-
|}

==Generic Cross Junction==
[[File:G68.png]]

This is an eight-pin, four-port device that models a cross junction among four general purpose transmission lines. The cross geometry and the line structures can be very complicated, and their full-wave effects can be captured by the measured or simulated S-parameter data of this device. The model may also include a certain length of the four transmission lines at the four ports.

Model Identifier: tee-junction

Parameters:

A table of s11, s21, s31, s41, s12, s22, s32, s42, s13, s23, s33, s43, s14, s24, s34 and s44-parameter values as a function of frequency

== Generic Highpass Filter Block==

[[File:GL82.png]]

This device is a generic highpass filter with a user specified cutoff frequency. It is based on a fifth-order Butterworth LC ladder topology.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|cutoff||cutoff frequency||Hz||1Meg||
|-
|r0||source/load resistance||Ω||50||
|-
|}

== Generic Lowpass Filter Block==
[[File:GL81.png]]

This device is a generic lowpass filter with a user specified cutoff frequency. It is based on a fifth-order Butterworth LC ladder topology.

[[Parameters]]:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|cutoff||cutoff frequency||Hz||1Meg||
|-
|r0||source/load resistance||Ω||50||
|-
|}

==Generic Multiport Networks==
[[File:G60.png]] [[File:G61.png]] [[File:G62.png]] [[File:G63.png]]

[[RF.Spice A/D]] currently offers four types of generic network devices: one-port, two-port, three-port and four-port. There are two-pin, four-pin, six-pin and eight-pin, respectively. [[Multiport Networks|Multiport networks]] can be used to model very complicated active or passive structures, which can be characterized by their measured or simulated S-parameter data.

Model Identifier: one-port, two-port, three-port, four-port

Parameters:

One-Port: A table of s11-parameter values as a function of frequency

Two-Port: A table of s11, s21, s12 and s22-parameter values as a function of frequency

Three-Port: A table of s11, s21, s31, s12, s22, s32, s13, s23 and s33-parameter values as a function of frequency

Four-Port: A table of s11, s21, s31, s41, s12, s22, s32, s42, s13, s23, s33, s43, s14, s24, s34 and s44-parameter values as a function of frequency

==Generic Open End==
[[File:G64.png]]

This is a two-pin, one-port device that models the open end of a general purpose transmission line segment. Infringing capacitance effects can be captured by the measured or simulated S-parameter data of this device. The model may also include a certain length of the transmission line.

Model Identifier: open-end

Parameters:

A table of s11-parameter values as a function of frequency

==Generic Open Stub==
[[File:G70.png]]

This is a two-pin, one-port device that models a general purpose transmission line segment terminated in an open end. An infinite impedance load is indeed connected to the end of the T-line segment. The fringing capacitance effects, however, are neglected by this model.

Model Identifier: stub-open

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|Z0||characteristic impedance||Ohms||50.0||
|-
|eeff||effective permittivity||-||1.0||
|-
|alpha||attenuation constant||dB/m||0.0||
|-
|len||line segment length||mm||10.0||
|-
|}

==Generic Short Stub==
[[File:G71.png]]

This is a two-pin, one-port device that models a general purpose transmission line segment terminated in a shorted end. A zero impedance load is indeed connected to the end of the T-line segment. The inductive loading effects, however, are neglected by this model.

Model Identifier: stub-short

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|Z0||characteristic impedance||Ohms||50.0||
|-
|eeff||effective permittivity||-||1.0||
|-
|alpha||attenuation constant||dB/m||0.0||
|-
|len||line segment length||mm||10.0||
|-
|}

==Generic Step Junction==
[[File:G66.png]]

This is a four-pin, two-port device that models a step-in-width junction between two general purpose transmission lines. The step geometry and the line structures can be very complicated, and their full-wave effects can be captured by the measured or simulated S-parameter data of this device. The model may also include a certain length of the two transmission lines at the input and output ports.

Model Identifier: step-junction

Parameters:

A table of s11, s21, s12 and s22-parameter values as a function of frequency

==Generic T-Line==
[[File:G69.png]]

This is a four-pin, two-port device that models a general purpose transmission line segment.

Model Identifier: t-line

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|Z0||characteristic impedance||Ohms||50.0||
|-
|eeff||effective permittivity||-||1.0||
|-
|alpha||attenuation constant||dB/m||0.0||
|-
|len||line segment length||mm||10.0||
|-
|}

==Generic Tee Junction==
[[File:G67.png]]

This is a six-pin, three-port device that models a tee junction among three general purpose transmission lines. The tee geometry and the line structures can be very complicated, and their full-wave effects can be captured by the measured or simulated S-parameter data of this device. The model may also include a certain length of the three transmission lines at the two through ports and the side arm.

Model Identifier: tee-junction

Parameters:

A table of s11, s21, s31, s12, s22, s32, s13, s23 and s33-parameter values as a function of frequency

== Geometric Mean Block ==

[[File:GL57.png]]

This 3-pin device sends the geometric mean of its two inputs to the output with a default unity gain.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|gain||gain||-||1.0||
|-
|}

==Ground==

[[File:G15.png]]

Ground has a voltage of zero (0) and is used as a reference to compute electrical values in the circuit.
All circuits must be grounded to be properly simulated. There is no limit on the number of grounds
you may use in a circuit. All components connected to ground are referenced to a common point and treated
as linked through ground.

==Gudermannian Polarity Detector Block==

[[File:GL68.png]]

This 3-pin device measures the difference signal Δv = vpos - vneg and produces an output proportional to the Gudermannian function of Δv:

<math> v_{out} = A \cdot \frac{2}{\pi} \ gd(a\Delta v) = A \cdot \left( \frac{4}{\pi} \tan^{-1}(e^{a\Delta v}) - 1 \right) </math>

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|a||shaping Constant||-||10||
|-
|MaxVal||output amplitude||V||1||
|-
|}

==Hysteresis Block (XSPICE)==

[[File:G37.png]]

The Hysteresis block is a simple buffer stage that provides hysteresis of the output with respect to the
input. The in_low and in_high parameter values. The output values are limited to out_lower_limit and
out_upper_limit. The value of \93hyst\94 is added to the in_low and in_high points in order to specify the
points at which the slope of the hysteresis function would normally change abruptly as the input transitions
from a low to a high value. Likewise, the value of \93hyst\94 is subtracted from the in_high and in_low values
in order to specify the points at which the slope of the hysteresis function would normally change abruptly
as the input transitions from a high to a low value. In fact, the slope of the hysteresis function is
never allowed to change abruptly but is smoothly varied whenever the input_dowmain smoothing parameter
is set greater than zero.

Model Identifier: hyst

Netlist Format:

A<device_name> <in_pin> <out_pin> <model_name>

.model <model_name> hyst {<param1 = value> < param2 = value> ...}

Example:

A1 1 2 hysteresis_block

.model hysteresis_block hyst in_low = 0.0 in_high = 1.0

Parameters:

{| class="wikitable"
|-
!Name!!Description!!Default
|-
|In_low||input low value||0.0
|-
|in_high||input high value||1.0
|-
|hyst||hysteresis||0.1
|-
|out_lower_limit||output lower limit||0.0
|-
|out_upper_limit||output upper limit||1.0
|-
|input_domain||input smoothing domain||0.01
|-
|fraction||smoothing fraction/absolute value switch||true
|-
|}

==Ideal Buffer Block==

[[File:GL40.png]]

This model is an ideal buffer block with a default unity gain.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|r_in||input resistance||Ω||1G||
|-
|r_out||output resistance||Ω||1u||
|-
|gain||gain||-||1.0||
|-
|}

==Ideal Center-Tapped Transformer with Push-Pull Input==

[[File:XFMR4.png]]

The ideal center-tapped transformer with push-pull input is a five-pin three-port device with two primary input ports and one secondary output port. Its model is based on the [[Glossary_of_Generic_Analog_Devices#Ideal_Transformer | Ideal Transformer]], and the relationship between its primary and secondary voltages is given by:

<math> \frac{v_P1}{v_S} = \frac{v_P2}{v_S} = n </math>

where vS is the secondary voltage, vP1 is measured between the top primary pin P1 and the center tap pin, and vP2 is measured between the center tap pin and the bottom primary pin P2. The red dots show the polarity of the windings on each side. This model has one parameter: ratio = n = NP1/NS = NP2/NS, which represents the primary-to-secondary (half-winding) turns ratio.

==Ideal Center-Tapped Transformer with Push-Pull Output==

[[File:XFMR3.png]]

The ideal center-tapped transformer with push-pull output is a five-pin three-port device with one primary input port and two secondary output ports. Its model is based on the [[Glossary_of_Generic_Analog_Devices#Ideal_Transformer | Ideal Transformer]], and the relationship between its primary and secondary voltages is given by:

<math> \frac{v_P}{v_{S1}} = \frac{v_P}{v_{S2}} = n </math>

where vP is the primary voltage, vS1 is measured between the top secondary pin S1 and the center tap pin, and vS2 is measured between the center tap pin and the bottom secondary pin S2. The red dots show the polarity of the windings on each side. This model has one parameter: ratio = n = NP/NS1 = NP/NS2, which represents the primary-to-secondary (half-winding) turns ratio.

==Ideal Diode==

[[File:GK106.png]]

This 2-pin device is a very basic and primitive model of a diode as a rectifier or switch. When the voltage across the device's terminals is positive, it acts as a short circuit. When the voltage across the device's terminals is negative, it acts as an open circuit.

Parameters:

None

==Ideal Operational Amplifier (Op-Amp)==

[[File:GK105.png]]

This is a very basic and primitive model of an operational amplifier. It has only one parameter, open loop gain with a default value of 50,000, which is adequate for most cases. The ideal Op-Amp device doesn't require any DC bias voltages.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|A||open loop gain||-||50,000||
|-
|}

==Ideal Transformer==

[[File:XFMR1.png]]

The ideal transformer is a four-pin two-port device with the following relationship between the voltages and currents at its primary and secondary ports:

<math> \frac{v_P}{v_S} = - \frac{i_S}{i_P} = \frac{N_P}{N_S} = n </math>

where vP, iP, NP are the primary voltage, current and number of turns, respectively, and vS, iS, NS are the secondary voltage, current and number of turns, respectively. The red dots show the polarity of the windings on each side. This model has one parameter: ratio = n = NP/NS, which represents the primary-to-secondary turns ratio. Note that the ideal transformer model is defined based on controlled sources and does not involve any magnetic physical parameters as opposed to mutual inductors or ferrite core transformer.

==Inductance Meter==

[[File:G37.png]]

The Inductance Meter measures the total inductance between a circuit node and the ground. The input pin of the device is connected to the measurement node. The output voltage of the device is then a scaled value equal to the total inductance seen on its input multiplied by the gain parameter. This model is primarily intended as a building block for other models which must sense an inductance value and alter their behavior based upon it. Care must be exercised when connecting an Inductance Meter to the inductors of a circuit. This is due to the fact that inductors are treated by SPICE as current sources. This can cause a problem when an inductor is connected in series with a current source, or in series with a voltmeter, or in series with another inductor.

Model Identifier: lmeter

Netlist Format:

A<device_name> <in_pin> <out_pin> <model_name>

.model <model_name> imeter {<gain = value>}

Example:

A1 1 2 inductance_meter

.model inductance_meter lmeter gain = 1

Parameters:

The only parameter is the gain with a default value of 1.0.

==Inductive Coupler Block==

[[File:GK99.png]]

The Inductive Coupler Block couples any two existing inductors. This block doesn't have any pins because it doesn't actually represent inductors, only the coupling between them. This is useful if you want to
couple two inductors that are in different parts of the circuit, or if you want to couple more than two inductors together. In the latter case, use more than one of these, with each one coupling a pair of inductors.

The standard parameters are Inductor1, Inductor2, and k. Inductor1 is the name of first inductor, Inductor2 is the name of the second inductor, and k is the coefficient of coupling, 0 < k ≤ 1.

==Inductive Coupling (XSPICE)==

[[File:G41.png]]

This function is a conceptual model which is used as a building block to create a wide variety of inductive and magnetic circuit models. This function is normally used in
conjunction with the “core” model, but it can also be used with resistors, hysteresis blocks, etc. to build up systems which mock the behavior of linear and nonlinear components.
The lcouple takes as an input (on the “l” port) a current. This current value is multiplied by the num_turns value, N, to produce an output value (a voltage value which appears on the
mmf_out port). The mmf_out acts similar to a magnetomotive force in a magnetic circuit;
when the lcouple is connected to the “core” model, or to some other resistive device, a current will flow. This current value (which is modulated by whatever the lcouple is
connected to) is then used by the lcouple to calculate a voltage “seen” at the “l” port. The voltage is a function of the derivative with respect to time of the current value seen at mmf_out.

The most common use for lcouple will be as a building block in the construction of transformer models. To create a transformer with a single input and a single output, you
would require two lcouple models plus one “core” model.

Example:

A1 (1 0) (2 3) lcouple1

.model lcouple1 lcouple ( num_turns = 10 )

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|num_turns||number of turns||-||1||required
|-
|}

==Inductor==

[[File:GK121.png]]

Inductors are used to store magnetic energy. An inductor's ability to counteract current changes passing through it is called its inductance (L), which is
measured in Henrys. In a (steady-state) DC analysis, the inductor acts like a short circuit. It is indeed treated as a current source, which can be problematic if an inductor is connected in series with a current source, or in series with a voltmeter, or in series with another inductor. The resistor may be of negligible value or one that accounts for the coil resistance of the inductor. In AC and transient analyses, the inductor develops a voltage across it in response to the changing magnetic
flux within its coil.

An inductor's transient behavior is described by the equation:

v(t) = L*(di(t)/dt)

The inductor's initial condition is optional. It is the initial value of the inductor current in Amperes that flows from node N+ through the inductor to node N-. The only time that the initial current matters is when the simulator performs a transient analysis, and the "Use Initial Conditions" checkbox is checked.

An inductor's AC behavior is described by the equation:

v = j ω * L * i

All inductor names must begin with L.

Netlist Format:

L<device_name> <N+> <N-> <value>

Example:

L1 1 2 10u

==Inductor with Ferrite Core==

[[File:GK94.png]]

This 2-pin device models a physical inductor with a magnetic ferrite core. Its model is based on XSPICE's magnetic core and inductive coupling models. Unlike the standard inductor device, you do not specify an inductance value for the inductor with ferrite core. Rather, you specify physical parameters like cross sectional area, core length and number of turns. The physical model of the magnetic device is defined by two vectors: magnetic field intensity H in A/m and magnetic flux density B (also known as magnetic induction) in Tesla. The default array values are:

H_array = [-250 -100 -50 -37.5 -25 -12.5 0 12.5 25 37.5 50 100 250]

B_array = [-0.375 -0.36 -0.32 -0.29 -0.24 -0.15 0 0.15 0.24 0.29 0.32 0.36 0.375]

To change the value of H/B arrays, open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|n_turns||number of turns||-||100||required
|-
|area||cross-sectional area||m2||1e-5||
|-
|length||core length||m||0.01||
|-
|}

== Insulated Gate Bipolar Transistor (IGBT)==

[[File:GK111.png]]

This is a 3-pin parameterized Insulated Gate Bipolar Transistor (IGBT) device with three pins: Collector(C), Gate (G), and Emitter (E). It is primarily used as a fast electronic switch. The IGBT combines the simple gate-drive characteristics of MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors. The device's model consists of an isolated gate FET for the control input, and a PNP bipolar power transistor as a switch. To further modify the internal device models, open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|cap||parasitic capacitance||F||1n||
|-
|rg||gate resistance||Ohms||5||
|-
|re||emitter resistance||Ohms||0.05||
|-
|bf||pnp transistor forward beta||-||1||
|-
|vto||MOSFET threshold voltage||V||5||
|-
|kt||MOSFET transconductance||-||2.99||
|-
|cgso||MOSFET voltage gate-source overlap capacitance||F||5u||
|-
|nd||diode emission coefficient||-||50||
|-
|cjo||diode junction capacitance||F||1n||
|-
|}

==Interactive Switch==

[[File:GK75.png]]

This device is an interactive switch that can be closed or opened either directly from the Schematic Editor by clicking on its symbol or from the Instrument Panel.

==Junction Field Effect Transistor (JFET)==

[[File:G12.png]]

The JFET is the simplest transistor device and has three pins: gate, drain and source. The JFET defaults are based on the Shichman and Hodges FET model. This is a square-law device because of the expression relating the drain current to the gate-to-source voltage:
Idrain=*(VGS-Vthreshold)2. In real JFETs, near the saturation point, the drain currents vary with the drain voltages. This can be modeled by the following formula: Idrain=*(VGS-VTO)2*(1+*VDS), which yields an increasing
drain current for increasing values of VDS.

The gate-to-source and gate-to-drain junctions each have a nonlinear capacitor. The zero-bias capacitance value is selected for each junction.

The standard device parameters are AREA, OFF, IC, and T. They are described below:

{| class="wikitable"
|-
|AREA||area factor (optional) (If not specified, the default value is 1.0.)
|-
|OFF||initial condition for the DC analysis (optional)
|-
|IC||initial condition (optional) (Used when a transient analysis is desired, which starts from other than the quiescent operating point.)
|-
|T||operating temperature of the device (optional)
|-
|}

The process model parameters are listed in the following table:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!EXAMPLE
|-
|VTO||threshold voltage||V||-2||-2
|-
|BETA||transconductance parameter||A/V2||1.0e-4||1.0e-3
|-
|LAMBDA||channel-length modulation parameter||1/V||0||1.0e-4
|-
|RD||drain ohmic resistance||ohms||0||100
|-
|RS||source ohmic resistance||ohms||0||100
|-
|CGS||zero-bias G-S junction capacitance||F||0||5pF
|-
|CGD||zero-bias G-D junction capacitance||F||0||1pF
|-
|PB||gate junction potential||V||1||0.6
|-
|IS||gate junction saturation current||A||1.0e-14||1.0e-14
|-
|B||doping tail parameter|| ||1||1.1
|-
|KF||flicker-noise coefficient|| ||0||
|-
|AF||flicker-noise exponent|| ||1||
|-
|FC||coefficient for forward-bias depletion capacitance formula|| ||0.5||
|-
|TNOM||parameter measurement temperature||deg. C||27||50
|-
|}

== Light Emitting Diode (LED) ==

[[File:GK114.png]]

This is a two-pin parameterized diode device that emits light of a certain wavelength when it is forward-biased.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|rs||ohmic resistance||Ohms||10||
|-
|vj||junction potential||V||0.6||
|-
|cjo||zero bias junction capacitance||F||10p||
|-
|tt||transit time||sec||0.1n||
|-
|}

==Linear Current-Controlled Current Source (CCCS)==

[[File:G2.png]]

The CCCS is a current source whose current is directly proportional to the current across a controlling Ammeter or a voltage source. There are two versions: two-terminal and four-terminal. For the two-terminal device, you must specify the name of the controlling Ammeter or voltage source, as well as the current gain, which has a default value of one. The four-terminal device already provides nodes for a controlling ammeter, and you just specify the current gain.

Model Identifier: cccs

Netlist Format:

F<device_name> <N+> <N-> <controlling_device_name> <value>

Example:

F1 1 0 V1 1.0

==Linear Current-Controlled Voltage Source (CCVS)==

[[File:G4.png]]

The CCVS is a voltage source whose voltage is directly proportional to the current through a controlling ammeter or a voltage source. There are two versions: two-terminal and four-terminal. For the two-terminal device, you must specify the name of the controlling Ammeter or voltage source, as well as the trans-resistance gain, which has a default value of one. The four-terminal device already provides nodes for a controlling ammeter, and you just specify the trans-resistance gain.

Model Identifier: ccvs

Netlist Format:

H<device_name> <N+> <N-> <controlling_device_name> <value>

Example:

H1 1 0 V1 1.0

==Linear Voltage-Controlled Current Source (VCCS)==

[[File:G3.png]]

The VCCS is a current source whose current is directly proportional to the voltage across a controlling voltmeter or the voltage between two circuit nodes. There are two versions: two-terminal and four-terminal. For the two-terminal device, you must specify the name of the controlling voltmeter or the two controlling nodes, as well as the trans-conductance gain, which has a default value of one. The four-terminal device already provides nodes for a controlling voltmeter, and you just specify the trans-conductance gain.

Model Identifier: vccs

Netlist Format:

G<device_name> <N+> <N-> <NC+> <NC-> <value>

Example:

G1 1 0 2 0 1.0

==Linear Voltage-Controlled Voltage Source (VCVS)==

[[File:G1.png]]

The VCVS is a voltage source whose voltage is directly proportional to the voltage across a controlling voltmeter of the voltage between two circuit nodes. There are two versions: two-terminal and four-terminal. For the two-terminal device, you must specify the name of the controlling voltmeter or the two controlling nodes, as well as the voltage gain, which has a default value of one. The four-terminal device already provides nodes for a controlling voltmeter, and you just specify the voltage gain.

Model Identifier: vcvs

Netlist Format:

E<device_name> <N+> <N-> <NC+> <NC-> <value>

Example:

E1 1 0 2 0 1.0

==Lossless Transmission Line==

[[File:G21.png]]

The lossless transmission line is a four-pin two-port device that models only one propagating mode of an ideal transmission line. When using this SPICE model, should all four nodes of the actual circuit be distinct, two modes may be activated, and this device would be insufficient for that purpose. To circumvent this potential problem, two transmission line devices would be required. Due to the implementation details, you may produce more accurate simulation results with a lossy transmission line device with zero loss.

Optional initial condition parameters are the voltage and current at each of the transmission line ports.

The standard device parameters are Z0, TD, F, NL, IC, described below:

{| class="wikitable"
|-
|Z0||characteristic impedance
|-
|TD||transmission delay
|-
|F||frequency
|-
|NL||normalized electrical length of the transmission line with respect to the wavelength in the line at frequency F. (If F is specified, but NL is not, the default is 0.25.)
|-
|IC||initial condition (Specifies the voltage and current at each of the transmission line ports.)
|-
|}

==Lossy Transmission Line==

[[File:G22.png]]

The lossy transmission line is a four-pin two-port convolution model for uniform constant-parameter distributed lines. MNAME is the process model name, which
includes a set of pre-specified options as described below.

The device model [[parameters]] are listed in the following table:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!EXAMPLE
|-
|R||resistance /length||Ohm /m||0.0||0.2
|-
|L||inductance/length||henrys/m||0.0||9.13e-9
|-
|C||capacitance/length||farads/m||0.0||3.65e-12
|-
|LEN||length of line||m||none||1.0
|-
|LININTERP||use linear interpolation||flag||not set||set
|-
|QUADINTERP||use quadratic interpolation||flag||not set||set
|-
|MIXEDINTERP||use linear when quadratic seems bad||flag||not set||set
|-
|COMPACTREL||special reltol for straight line checking||flag||RETOL||1.0e-3
|-
|COMPACTABS||special abstol for straight line checking||flag||ABSTOL||1.0e-9
|-
|NOCONTROL||don't do complex time control||flag||not set||set
|-
|STEPLIMIT||always limit timestep to 0.8*(delay of line)|| || ||
|-
|NOSTEPLIMIT||don't always limit timestep to 0.8*(delay of line)||flag||not set||set
|-
|TRUNCNR||use Newton-Raphson method for timestep calculation in LTRAtrunc||flag||not set||set
|-
|TRUNCDONTCUT||don't limit timestep to keep impulse-response errors low||flag||not set||set
|-
|}


The RLC (uniform transmission line with series loss only), RC (uniform RC line), LC (lossless transmission
line), and RG (distributed series resistance and parallel conductance only) lines have been implemented.
The length (LEN) must be given. COMPACTREL and COMPACTABS control the compaction of past history values
used in convolution. Larger values for these lower accuracy but improve speed. These are used with the
TRYTOCOMPACT option. 

==Magnetic Core (XSPICE)==

[[File:G42.png]]

This device is used as a building block to create a wide variety of inductive and magnetic circuit models. It is almost always to be used in conjunction with the "lcouple" model to build up systems which simulate the behavior of linear and nonlinear magnetic components. There are two fundamental modes of operation for the core model. These are the "PWL" mode (which is the default and most
likely to be of use to you) and the "Hysteresis" mode.

PWL Mode (mode = 1)

In the PWL mode, the model takes a voltage as input which it treats as a magnetomotive force (mmf) value. This value is divided by the total effective length of the core to produce a value for the Magnetic Field Intensity, H, which is then used to find the corresponding Flux Density, B, using the piecewise linear relationship described by you in the H_array / B_array coordinate pairs. B is then multiplied by the cross-sectional area of the core to find the Flux value, which is output as a current. The pertinent mathematical equations are:

H = mmf / L, where L = Length (in apmere-turns/meter)

B = f(H)

Φ = B * A, where A = Area

The B value is derived from a piecewise linear transfer function described to the model by the H_array and B_array coordinate pairs. This transfer function does not include hysteretic effects; for that, you would need to substitute a HYST model for the core. The magnetic flux value Φ in turn is used by the "lcouple"
code model to obtain a value for the voltage reflected back across its terminals to the driving electrical circuit.

Hysteresis Mode (mode = 2)

In the Hysteresis mode, the model takes a voltage as input which it treats as a magnetomotive force (mmf)
value. This value is used as input to the equivalent of a hysteresis code model block. The parameters
defining the input low and high values, the output low and high values, and the amount of hysteresis are
as in that model. The output from this mode, as in PWL mode, is a current value which is seen across the magnetic core port.

One final note to be made about the two core models is that certain parameters are specific to one or the other. In particular, the in_low, in_high, out_lower_limit, out_upper_limit, and hysteresis parameters are not available in PWL mode. Likewise, the H_array, B_array, area, ad length values are unavailable
in Hysteresis mode. The input_domain and fraction parameters are common to both modes (though their behavior is somewhat different; for explanation of the input_domain and fraction values for the Hysteresis mode, please refer to the Hysteresis Block discussion.

Model Identifier: core

Netlist Format:

A<device_name> <mc1 _pin> <mc2_pin> <model_name>

.model <model_name> core area = <value> length = <value> H_array = [<value1> <value2>] B_array = [<value1> <value2>]
{<param1 = value> < param2 = value> ...}

Example:

A1 1 2 core

.model core core area = 1 length = 1 H_array = [0 1] B_array = [0 1]

Parameters:

{| class="wikitable"
|-
!Name!!Description!!Default!!Notes
|-
|H_array||magnetic field array||[0 1]||required
|-
|B_array||flux density array||[0 1]||required
|-
|Area||cross-sectional area||1||required
|-
|Length||core length||1||required
|-
|Input_domain||input smoothing domain||0.01||
|-
|Fraction||smoothing fraction/abs switch||True||
|-
|Mode||mode switch (1=pwl, 2=hyst)||1||
|-
|In_low||input low value||0.0||
|-
|In_high||input high value||1.0||
|-
|Hyst||hysteresis||0.1||
|-
|Out_lower_limit||output lower limit||0.0||
|-
|Out_upper_limit||output upper limit||1.0||
|-
|}

==Marker==

[[File:G16.png]]

The marker serves several purposes:

* It can appear as a default plot in simulations if the "Voltage Probe" box is checked.

* It can be used to set the initial voltage or voltage guess at the node it is connected to.

* It can be used as a port for a subcircuit when you choose the checkbox labeled "Use as Subcircuit Port" is checked.

* It can be used to explicitly set a node number in place of the arbitrarily assigned node number by the program. In this case, make sure the "Set Node Index" box is checked. Otherwise, it will act as just a voltage probe.

* It can be used to connect different parts of a circuit in place of wires. To use markers as virtual connectors, place them at points where wires would otherwise connect. Then set the Part Title of the two (or more) markers to the same name, and they will act as a single circuit node.

==MESFET==

[[File:G14.png]]

The MESFET is a Schottky-barrier gate FET with six times greater electron mobility than silicon. MESFETs are important devices for creating high frequency circuits. They function by creating a potential barrier between the gate and the channel when the metal gate
contacts the gallium-arsenide substrate. Electron velocity saturates for fields approximately ten times lower than with silicon. The Curtice model includes linear and saturated operation.

The standard parameters are AREA, OFF, IC, and T. They are described below:

{| class="wikitable"
|-
|AREA||area factor (optional) (If not specified, the default value is 1.0.)
|-
|OFF||initial condition for the DC analysis (optional)
|-
|IC||initial condition (optional) (Used when a transient analysis is desired, which starts from other than the quiescent operating point.)
|-
|T||operating temperature of the device (optional)
|-
|}

All the MESFET process model parameters are described in the following table:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!EXAMPLE
|-
|VTO||pinch-off voltage||V||-2||-2
|-
|BETA||transconductance parameter||A/V2||1.0e-4||1.0e-3
|-
|B||doping tail extending parameter||1/V||0.3||0.3
|-
|ALPHA||saturation voltage parameter||1/V||2||2
|-
|LAMBDA||channel-length modulation parameter||1/V||0||1.0e-4
|-
|RD||drain ohmic resistance||Ohm||0||100
|-
|RS||source ohmic resistance||Ohm||0||100
|-
|CGS||zero-bias G-S junction capacitance||F||0||5pF
|-
|CGD||zero-bias G-D junction capacitance||F||0||1pF
|-
|PB||gate junction potential||V||1||0.6
|-
|KF||flicker noise coefficient||-||0||
|-
|AF||flicker noise exponent||-||1||
|-
|FC||coefficient for forward-bias depletion capacitance formula||-||0.5||
|-
|}

==MOSFET==

[[File:G13.png]]

The MOSFET is an active device that has up to 4 pins. The three standard pins are gate, drain, and source. These are given in the default symbol. The bulk node, which is grounded by default, is the fourth pin. The MOSFET with the bulk is named mos_n_lvl1_4 (the lvl1 is for level 1, the n for nmos, and the 4 for 4 pins.)

The standard [[parameters]] are L, W, AD, AS, PD, PS, NRD, NRS, OFF, IC, and T. They are described below:

{| class="wikitable"
|-
|L||channel length, in meters
|-
|W||channel width, in meters
|-
|AD,AS||areas of the drain and source diffusions, in meters2
|-
|PD,PS||perimeters of drain and source junctions, in meters(They default to 0.0.)
|-
|NRD,NRS||equivalent number of squares of the drain and source diffusions (These values multiply the sheet resistance for an accurate representation of parasitic series drain and source resistance of each transistor. The default value is 1.0.)
|-
|OFF||initial condition for the DC analysis (optional)
|-
|IC||initial condition (optional) (Used when a transient analysis is desired, which starts from other than the quiescent operating point.)
|-
|T||operating temperature of the device (optional)
|-
|}

There are five different default models: square-law I-V characteristic, analytical, semi-empirical, and BSIM and BSIM2 (Berkeley Short-channel IGFET Model), which include second-order effects such as channel-length
modulation, subthreshold conduction, scattering-limited velocity saturation, small-size effects, and charge-controlled capacitance. The process parameter LEVEL specifies which of the models is chosen as indicated below:

{| class="wikitable"
|-
|LEVEL 1||Schichman-Hodges
|-
|LEVEL 2||MOS2
|-
|LEVEL 3||MOS3
|-
|LEVEL 4||BSIM
|-
|LEVEL 5||BSIM2
|-
|LEVEL 6||MOS6
|-
|}

The process model [[parameters]] for levels 1,2,3, and 6 are listed in the following table:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!EXAMPLE
|-
|LEVEL||model index|| ||1||
|-
|VTO||zero-bias threshold voltage||V||0.0||1.0
|-
|KP||transconductance parameter||A/V2||2e-5||3.1e-5
|-
|GAMMA||bulk threshold parameter||V1/2||0.0||0.37
|-
|PHI||surface potential||V||0.6||0.65
|-
|LAMBDA||channel-length modulation (level 1 & 2 only)||1/V||0.0||0.02
|-
|RD||drain ohmic resistance||ohms||0.0||1.0
|-
|RS||source ohmic resistance||ohms||0.0||1.0
|-
|CBD||zero-bias B-D junction capacitance||F||0.0||20fF
|-
|CBS||zero-bias B-S junction capacitance||F||0.0||20fF
|-
|IS||bulk junction saturation current||A||1.0e-14||1.0e-15
|-
|PB||bulk junction potential||V||0.8||0.87
|-
|CGSO||gate-source overlap capacitance per meter channel width||F/m||0.0||4.0e-11
|-
|CGDO||gate-drain overlap capacitance per meter channel width||F/m||0.0||4.0e-11
|-
|CGBO||gate-bulk overlap capacitance per meter channel length||F/m||0.0||2e-10
|-
|RSH||drain & source diffusion sheet resistance||ohm/area||0.0||10.0
|-
|CJ||zero-bias bulk junction bottom capacitance per meter2 junction area||F/m2||0.0||2e-4
|-
|MJ||bulk junction bottom grading coefficient|| ||0.5||0.5
|-
|CJSW||zero-bias bulk junction sidewall capacitance per meter junction perimeter||F/m||0.0||1.0e-9
|-
|MJSW||bulk junction sidewall grading coefficient|| ||0.5, 0.33 (level1), (level2,3)||
|-
|JS||bulk junction saturation current per meter2 of junction area||A/m2|| ||1.0e-8
|-
|TOX||oxide thickness||meter||1.0e-7||1.0e-7
|-
|NSUB||substrate doping||1/cm3||0.0||4.0e15
|-
|NSS||surface state density||1/cm2||0.0||1.0e10
|-
|NFS||fast surface state density||1/cm2||0.0||1.0e10
|-
|TPG||type gate material(+1 if opp. substrate, 0 if A1 gate, -1 if same as substrate)|| ||1.0||
|-
|XJ||metallurgical junction depth||meter||0.0||1
|-
|LD||lateral diffusion||meter||0.0||0.8
|-
|UO||surface mobility||cm2/Vs||600||700
|-
|UCRIT||critical field for mobility degradation (level2 only)||V/cm||1.0e4||1.0e4
|-
|UEXP||critical field exponent in mobility degradation (level2 only)|| ||0.0||0.1
|-
|UTRA||transverse field coefficient (deleted for level2)|| ||0.0||0.3
|-
|VMAX||maximum drift velocity of carriers||m/s||0.0||5.0e4
|-
|NEFF||total channel-charge (fixed and mobile) coefficient (level2 only)|| ||1.0||5.0
|-
|KF||flicker noise coefficient|| ||0.0||1.0e-26
|-
|AF||flicker noise exponent|| ||1.0||1.2
|-
|FC||coefficient for forward bias depletion capacitance formula|| ||0.5||
|-
|DELTA||width effect on threshold voltage (level2,3)|| ||0.0||1.0
|-
|THETA||mobility modulation (level3 only)||1/V||0.0||0.1
|-
|ETA||static feedback (level3 only)|| ||0.0||1.0
|-
|KAPPA||saturation field factor (level3 only)|| ||0.2||0.5
|-
|TNOM||parameter measurement temperature||deg. C||27||50
|-
|}

The BSIM model has no default parameters, and leaving one out is considered an error. The additional process model parameters for level 4 and 5 models are listed in the following table:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS
|-
|VFB||flat-band voltage||V
|-
|PHI||surface inversion potential||V
|-
|K1||body effect coefficient||V1/2
|-
|K2||drain/source depletion charge-sharing coefficient||
|-
|ETA||zero-bias drain-induced barrier-lowering coefficient||
|-
|MUZ||zero-bias mobility||cm2/V-s
|-
|DL||shortening of channel||m
|-
|DW||narrowing of channel||m
|-
|U0||zero-bias transverse-field mobility degradation coefficient||V-1
|-
|U1||zero-bias velocity saturation coefficient||m/V
|-
|X2MZ||sens. of mobility to substrate bias at Vds=0||cm2/V2-s
|-
|X2E||sens. of drain-induced barrier lowering effect to substrate bias||V-1
|-
|X3E||sens. of drain-induced barrier lowering effect to drain bias at Vds= Vdd||V-1
|-
|X2U0||sens. of transverse field mobility degradation to substrate bias||V-2
|-
|X2U1||sens. of velocity saturation effect to substrate bias||mV-2
|-
|MUS||mobility at zero substrate bias and at Vds= Vdd||cm2/V2-s
|-
|X2MS||sens. of mobility to substrate bias at Vds= Vdd||cm2/V2-s
|-
|X3MS||sens. of mobility to drain bias at Vds= Vdd||cm2/V2-s
|-
|X3U1||sens. of velocity saturation effect on drain bias at Vds= Vdd||mV-2
|-
|TOX||gate oxide thickness||m
|-
|TEMP||temperature at which [[parameters]] were measured||deg. C
|-
|VDD||measurement bias range||V
|-
|CGDO||gate-drain overlap capacitance per meter channel width||F/m
|-
|CGSO||gate-source overlap capacitance per meter channel width||F/m
|-
|CGBO||gate-bulk overlap capacitance per meter channel length||F/m
|-
|XPART||gate-oxide capacitance-charge model flag||
|-
|N0||zero-bias subthreshold slope coefficient||
|-
|NB||sens. of subthreshold slope to substrate bias||
|-
|ND||sens. of subthreshold slope to drain bias||
|-
|RSH||drain and source diffusion sheet resistance||ohms/area
|-
|JS||source drain junction current density||A/m2
|-
|PB||built-in potential of source drain junction||V
|-
|MJ||grading coefficient of source drain junction||
|-
|PBSW||built-in potential of source drain junction sidewall||V
|-
|MJSW||grading coefficient of source drain junction sidewall||
|-
|CJ||source drain junction capacitance per unit area||F/ m2
|-
|CJSW||source drain junction sidewall capacitance per unit length||F/m
|-
|WDF||source drain junction default width||m
|-
|DELL||source drain junction length reduction||m
|-
|}

XPART=0 selects a 40/60 drain/source charge partition; XPART=1 selects a 0/100 partition.

==Mutual Inductors==

[[File:GK100.png]]

The mutual inductors device is a pair of inductors that are coupled to each other. L1 and L2 are the names of two inductors. You have to specify the inductance of inductor L1, the inductance of inductor L2, the initial current through each, and the coupling coefficient k, 0 ≤ k ≤ 1. The mutual inductance M expressed in units of H can be calculated using the following definition:

<math> k = \frac{M}{\sqrt{L_1 L_2}} </math>

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|inductance1||inductance of inductor 1||H||1||
|-
|inductance2||inductance of inductor 2||H||1||
|-
|ic1||initial current through inductor 1||A||0||
|-
|ic2||initial current through inductor 2||A||0||
|-
|k||coefficient of coupling||-||1.0||
|-
|}

==Non-Ideal Current Transformer==

[[File:GK104.png]]

This 8-pin device models a non-ideal lossy current transformer. Its model consists of an ideal transformer with more secondary turns than primary turns along with a number of parasitic elements. The interior pins with red wires give you direct access to the primary and secondary pins of the internal ideal transformer. on each side of the internal ideal transformer, there is a series leakage inductance LLk, followed by a shunt winding capacitance CWk and a series winding resistance RWk, which connects to the exterior positive pin on that side. The inter-winding resistance R12 is connected across the negative pins of the primary and secondary of the ideal transformer model. In a more complete model, an external inductor LM can be connected between the positive and negative interior pins of either the primary or secondary to account for the effects of the magnetization inductance.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|ratio||secondary-to-primary turns ratio||-||2||required
|-
|rw1||primary winding resistance||Ohms||0.1||
|-
|rw2||secondary winding resistance||Ohms||0.1||
|-
|ll1||primary leakage inductance||H||1m||
|-
|ll2||secondary leakage inductance||H||1m||
|-
|cw1||primary winding capacitance||F||1p||
|-
|cw2||secondary winding capacitance||F||1p||
|-
|r12||inter-winding resistance||Ohms||10Meg||
|-
|}

==Non-Ideal Diode==

[[File:G9.png]]

This 2-pin device is a basic simplified model of a diode as a rectifier or switch. When forward-biased, it acts as a low-valued voltage source. When reverse-biased, it acts as an open circuit until the reverse voltage exceeds the specified breakdown voltage. Then it acts as a high-valued voltage source of the reverse polarity.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|vf||forward drop voltage||V||0.5||required
|-
|vr||reverse breakdown voltage||V||100||required
|-
|}

==Non-Ideal Voltage Transformer==

[[File:GK103.png]]

This 8-pin device models a non-ideal lossy voltage transformer. Its model consists of an ideal transformer with more primary turns than secondary turns along with a number of parasitic elements. The interior pins with red wires give you direct access to the primary and secondary pins of the internal ideal transformer. There are series combinations of a winding resistance RWk and a leakage inductance LLk on the primary and secondary sides. These are connected between the positive interior and exterior pins on each side. There are also two shunt branches at the inputs of the primary and secondary sides (connected between the positive and negative exterior pins), each consisting of a distributed turn-to-turn winding resistance RDCk in series with a distributed turn-to-turn winding capacitance CWk. The inter-winding capacitance CWW12 is connected across the positive pins of the primary and secondary of the ideal transformer model. In a more complete model, an external inductor LM can be connected between the positive and negative interior pins of either the primary or secondary to account for the effects of the magnetization inductance.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|ratio||primary-to-secondary turns ratio||-||2||required
|-
|rw1||primary winding resistance||Ohms||0.1||
|-
|rw2||secondary winding resistance||Ohms||0.1||
|-
|ll1||primary winding leakage inductance||H||1m||
|-
|ll2||secondary winding leakage inductance||H||1m||
|-
|rdc1||primary distributed turn-to-turn winding resistance||Ohms||1u||
|-
|cw1||primary distributed turn-to-turn winding capacitance||F||1p||
|-
|rdc2||secondary distributed turn-to-turn winding resistance||Ohms||1u||
|-
|cw2||secondary distributed turn-to-turn winding capacitance||F||1p||
|-
|cww12||inter-winding capacitance||F||1p||
|-
|}

==Nonlinear Capacitor==

[[File:GK89.png]]

The nonlinear capacitor model allows the capacitor to be described by an arbitrary relationship between the capacitor's charge Q and the voltage V across the capacitor. In other words, Q = f(V). The nonlinear capacitance is then defined as C(V) = dQ/dV. You need to define the charge Q by a mathematical expression in the voltage V. You have to open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text. Enter any mathematical expression in the variable "v(pos,neg)" standing for the terminal voltage. The default expression is:

{ C_DEF } * v(pos,neg)

which implies a linear capacitor, where Q = CDEF V. Therefore, C = C(V) = dQ/dV = CDEF.

Another example is 1e-4*(v(pos,neg))^2.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|C_DEF||default capacitance||F||1||
|-
|}

==Nonlinear Conductor==

[[File:GK88.png]]

The nonlinear conductor model allows the conductor to be described by an arbitrary relationship between the conductor's current I and the voltage V across the conductor. In other words, I = f(V). The nonlinear conductance is then defined as G(V) = dI/dV. You need to define the current I by a mathematical expression in the voltage V. You have to open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text. Enter any mathematical expression in the variable "v(pos,neg)" standing for the terminal voltage. The default expression is:

{ G_DEF } * v(pos,neg)

which implies a linear conductor, where I = GDEF V. Therefore, G = G(V) = dI/dV = GDEF.

Another example is 1e-4*(v(pos,neg))^2.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|G_DEF||default capacitance||S||1||
|-
|}

==Nonlinear Dependent Sources==

[[File:G18.png]]

Nonlinear dependent (arbitrary) sources use an equation or mathematical expression to describe their behavior. One and only one of the two forms: V=<expr> or I=<expr> must be given.

Netlist Format:

B<device_name> v = <expression>

B<device_name> i = <expression>

Examples:

v = I(v1) + 3* I(v2)

I = v(i1) + 3* v(2) + 5 * v(3) ^2

The first example is a current-controlled voltage source. The v on the left side of the equation
indicates that it is a voltage source. I(v1) and I(v2) are the currents through voltage sources named v1 and v2, respectively.

The second example is a voltage-controlled current source. v(2) and v(3) represents the voltages at nodes 2 and 3, respectively, and v(i1) represents the voltage across a current source named i1.

The following mathematical functions defined for real variables can be used in the expressions:

abs(x), acos(x), acosh(x), asin(x), asinh(x), atan(x), atanh(x), cos(x), cosh(x), exp(x), ln(x), log(x), max(x,y), min(x,y), pwr(x,y), pwrs(x,y), sgn(x), sin(x), sinh(x), sqrt(x), tan(x), tanh(x), u(x), uramp(x).

The function "sgn" is the signum function and its value is 1 if the argument is positive or zero and -1 if the argument is negative.
The function "u(x)" is the unit step and "uramp(x)" is the integral of the unit step. The
unit step is one if its argument is greater than zero and zero if its argument is less than zero. The
ramp function (uramp) is 0 for argument values less than zero and equal to the argument for argument values
greater than zero.

The following operators are permissible: +, -, *, /, and ^.

The power functions have equivalent expressions: pwr(x,y) = x^y and pwrs(x,y) = sgn(x)*abs(x)^y.

Two constants can also be used in expressions: pi = 3.1415926 and e = 2.7182818.

There is a conditional function with the syntax IF(Condition, Expression1, Expression2). If "Condition" is met, then the return value of the function is Expression1; otherwise, it is Expression2. An example of this type of function is IF(v(1)>=0,1,-1), which is equivalent to sgn(v(1)).

To get time into an expression, integrate the current from a constant current source with a capacitor
and use the voltage across the capacitor.

Note: All the functions and expressions are case-insensitive.

==Nonlinear Inductor==

[[File:GK90.png]]

The nonlinear inductor model allows the inductor to be described by an arbitrary relationship between the inductor's magnetic flux Φ and the current I flowing through the inductor . In other words, Φ = f(I). The nonlinear inductance is then defined as L(I) = dΦ/dI. You need to define the flux Φ by a mathematical expression in the current I. You have to open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text. Enter any mathematical expression in the variable "i(vx)" standing for the device current. The default expression is:

{ L_DEF } * i(vx)

which implies a linear inductor, where Φ = LDEF I. Therefore, L = L(I) = dΦ/dI = LDEF.

Another example is 1e-4*(i(vx))^2.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|L_DEF||default inductance||H||1||
|-
|}

==Nonlinear Resistor==

[[File:GK87.png]]

The nonlinear resistor model allows the resistor to be described by an arbitrary relationship between the voltage V across the resistor and its current I. In other words, V = f(I). The nonlinear resistance is then defined as R(I) = dV/dI. You need to define the voltage V by a mathematical expression in the current I. You have to open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text. Enter any mathematical expression in the variable "i(vx)" standing for the device current. The default expression is:

{ R_DEF } * i(vx)

which implies a linear resistor, where V = RDEF I. Therefore, R = R(I) = dV/dI = RDEF.

Another example is 10*(i(vx))^2.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|R_DEF||default resistance||Ω||1||
|-
|}

==Operational Amplifier (Op-Amp)==

[[File:GK105.png]]

This three-pin device models a parameterized operational amplifier with a very high voltage gain, a very high input impedance and a very low output impedance. The behavioral model of the parameterized Op-Amp device is based on the algorithm found in the book Macromodeling with Spice,
authored by Connelly & Choi, published by Prentice Hall. The default parameters are those of the 741 Op-Amp. This device doesn't require external DC bias voltage sources. Its positive and negative DC bias voltages are specified as its parameters. Sometimes the simulation doesn't converge if there is no DC path from the output of the Op-Amp to the ground.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|r_in_dm||differential mode input resistance||Ohms||2Meg||
|-
|r_in_cm||common mode input resistance||Ohms||2G||
|-
|Avd0||differential mode DC gain||dB||106||
|-
|CMRR||common mode rejection ratio||dB||90||
|-
|r_out||output resistance||Ohms||75||
|-
|c_in||input capacitance||F||1.4p||
|-
|ios||input offset current||A||20n||
|-
|ib||input bias current||A||80n||
|-
|vio||input offset voltage||V||1m||
|-
|slew_pos||positive slew rate||V/s||0.5e6||
|-
|slew_neg||negative slew rate||V/s||0.5e6||
|-
|curr_src_max||maximum output source current||A||25m||
|-
|curr_sink_||maximum output sink current||A25m||
|-
|fp1||dominant pole frequency||Hz||5||
|-
|fp2||second pole frequency||Hz||2Meg||
|-
|fp3||third pole frequency||Hz||20Meg||
|-
|fp4||fourth pole frequency||Hz||100Meg||
|-
|fz||first zero frequency||Hz||5Meg||
|-
|vcc_pos||positive dc voltage source||V||12||
|-
|vcc_neg||negative dc voltage source||V||12||
|-
|}

== Optocoupler ==

[[File:GK115.png]]

This is a five-pin parameterized optocoupler device. Its model consists of an ideal diode device in series with an Ohmic resistance connected between the Anode (A) and Cathode (K) pins together with a bipolar junction transistor device with three accessible pins, Collector (C), Base (B) and Emitter (E). A current-controlled current source is connected between base and collector of the BJT, whose current is controlled by the current passing through the diode. The proportionality constant is twice the specified value of the current transfer ratio (ctr) parameter.

You can change or enhance the models of the diode and BJT by adding more parameters. To do so, you have to open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|ctr||current transfer ratio||-||0.5||
|-
|rd||diode ohmic resistance||Ohms||0.1||
|-
|}

== Overtone Crystal ==

[[File:GK79.png]]

This is a 2-pin parameterized overtone crystal device.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|LM||fundamental motional inductance||H||250m||
|-
|CM1||fundamental motional capacitance||F||10f||
|-
|RM1||fundamental motional resistance||Ohms||20||
|-
|RM3||3rd overtone motional resistance||Ohms||50||
|-
|RM5||5th overtone motional resistance||Ohms||100||
|-
|RM7||7th overtone motional resistance||Ohms||150||
|-
|C0||shunt capacitance||F||3p||
|-
|}

== Photodiode ==

[[File:GK113.png]]

This is a 4-pin parameterized photodiode device. A pair of pins, Anode (A) and Cathode (K), represent the physical terminals of the photodiode. The photodiode model connected between the anode and cathode pins consists of the parallel connection of an ideal diode, a dark current source, a noise current source, a current-controlled current source, a diode capacitance, a shunt resistance altogether with a series resistance.

Another pair of pins IS+ and IS- act as an ammeter that must be inserted in a control circuit. The current passing through this ammeter controls the current of the photodiode. The default proportionality constant is unity. The controlling current is typically a function of light intensity incident on the surface of the photodiode.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|id||dark current||A||1n||
|-
|ir||noise current||A||1p||
|-
|cd||diode capacitance||F||10p||
|-
|rs||series resistance||Ohms||1m||
|-
|rp||parallel resistance||Ohms||1Meg||
|-
|}

==Piecewise Linear (PWL) Controlled Source==

[[File:GL49.png]]

The Piecewise Linear (PWL) Controlled Source is a single-input and single-output function generator whose output is not necessarily
linear for all input values. Instead, it follows an I/O relationship that is specified by the x_array and y_array coordinates. The x_array and y_array values represent vectors of coordinate points on the x and y axes, respectively. The x_array values are progressively increasing input coordinate points, and the associated y_array values represent the outputs at those points. There may be as few as two pairs specified, or as many as memory and simulation speed allow.

In order to fully specify outputs for values of Vin outside of the bounds of the PWL function, the PWL
controlled source model extends the slope found between the lowest two coordinate pairs and the highest
two coordinate pairs. This has the effect of making the transfer function completely linear for Vin
less than x_array[0] and Vin greater than x_array[n]. It also has the potentially subtle effect of unrealistically
causing an output to reach a very large or small value for large inputs. You should thus keep in mind
that the PWL Source does not inherently provide a limiting capability.

In order to diminish the potential for divergence of simulations when using the PWL block, a form
of smoothing around the x_array and y_array coordinate points is necessary. This is due to the iterative
nature of the simulator and its reliance on smooth first derivatives of transfer functions in order to
arrive at a matrix solution. Consequently, the two parameters "input_domain" and "fraction" are included
to allow you some control over the amount and nature o the smoothing performed.

Fraction is a switch that is either TRUE or FALSE. When TRUE (the default setting), the simulator assumes
that the specified input_domain value is to be interpreted as a fractional figure. Otherwise, it is interpreted
as an absolute value. Thus, if fraction = TRUE and input_domain = 0.10, the simulator assumes that the smoothing
radius about each coordinate point is to be set equal to 10% of the length of either the x_array segment
above each coordinate point, or the x_array segment below each coordinate point. The specific segment
length chosen will be the smallest of these two for each coordinate point.

If fraction = FALSE and input_domain = 0.10, then the simulator will begin smoothing the transfer function at 0.10
volts (or amperes) below each x_array coordinate and will continue the smoothing process for another 0.10
volts (or amperes) above each x_array coordinate point.

Model Identifier: pwl

Netlist Format:

A<device_name> %vd(<in_pin> <in_ref_pin>) %vd(<out_pin> <out_ref_pin>) <model_name>

.model <model_name> pwl x_array = [<value1> <value2> ...] y_array = [<value1>
<value2> ...] {<param1 = value> < param2 = value> ...}

Example:

A1 %vd(2 3) %vd(1 4) pwl
.model pwl pwl x_array = [0 1] y_array = [0 1]

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|x_array||x-element array||V||[0 1]||required
|-
|y_array||y-element array||V||[0 1]||required
|-
|input_domain||input smoothing domain||-||0.01||
|-
|fraction||smoothing %/abs switch||-||True||
|-
|}

== PM Modulated Source ==

[[File:GL25.png]]

This is a voltage source with a single-tone phase modulated waveform. The PM modulation index MDI is defined as the ratio of maximum phase deviation to maximum signal amplitude.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|V0||offset||V||0||
|-
|VA||amplitude||V||1||
|-
|FC||carrier frequency ||Hz||1||required
|-
|MDI||modulation index||-||0||required
|-
|FS||signal frequency ||Hz||1||required
|-
|}

== Potentiometer ==

[[File:GK77.png]]

This is a 3-pin device that models a potentiometer with options for either linear or logarithmic resistance. position = 0 corresponds to the wiper being at the extreme left and position = 1 corresponds to the wiper being at the extreme right. With the default position = 0.5 corresponding to the midpoint, this device functions as a one-half voltage divider.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|position||position of wiper connection||-||0.5||Must be between 0.0 and 1.0.
|-
|log||log-linear switch||-||False||Select False for linear and True for logarithmic.
|-
|r||total resistance||Ohms||0.1u||
|-
|log_multiplier||multiplier constant for log resistance||-||1.0||
|-
|}

== Programmable Unijunction Transistor (PUT)==

[[File:GK112.png]]

This is a 3-pin parameterized Programmable Unijunction Transistor (PUT) device with three pins: Base 1 (B1), Base 2 (B2) and Emitter (E). It is biased with a positive voltage between the two bases. This device has a unique characteristic that when it is triggered, its emitter current increases regeneratively until it is restricted by emitter power supply. It exhibits a negative resistance characteristic and so it can be employed as an oscillator. The device's model involves an NPN BJT and a PNP BJT. The forward beta parameters of the two transistors are set equal to 100 and 1, respectively. To change these values, open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|eta||-||-||0.6||
|-
|rbb||total base-to-base resistance||Ohms||40k||
|-
|rf||forward resistance||Ohms||1Meg||
|-
|rr||reverse resistance||Ohms||1Meg||
|-
|rgk||gate-to-cathode resistance||Ohms||100||
|-
|bvf||breakdown voltage of forward diode||V||100||
|-
|bvr||breakdown voltage of reverse diode||V||100||
|-
|bvgk||breakdown voltage of gate-to-cathode diode||V||5||
|-
|}

==Random Resistor==

[[File:GK93.png]]

The random resistor device models a resistor whose resistance is a random number between 0 and a maximum specified value.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|max_val||maximum resistance value||Ω||1k||
|-
|}

==Real Capacitor==

[[File:GK117.png]]

This is primarily a non-ideal, temperature-dependent capacitor model. You can access it from the Parts Menu as '''User-Defined Capacitor'''. It has two temperature coefficients: first-order TC1 temperature and second-order TC2. The value of the temperature-dependent capacitance is computed using the quadratic equation:

C(T) = C(T0) * [ 1 + TC1 * (T - T0) + TC2 * (T-T0)^2 ]

The device's model includes a series resistance and a series inductance together with the capacitor, all in parallel with a shunt resistance.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|Resr||series resistance||Ω||10||
|-
|Ls||inductance||H||1p||
|-
|C||capacitance||F||1n||
|-
|Rp||parallel resistance||Ω||1G||
|-
|ic||voltage initial condition||V||0||
|-
|temp||operating temperature||deg C||27||
|-
|tc1||first-order temperature coefficient||F/°C||0.1||
|-
|tc2||second-order temperature coefficient||F/°C2||0.01||
|-
|}

==Real Inductor==

[[File:GK118.png]]

This is primarily a non-ideal inductor model. You can access it from the Parts Menu as '''User-Defined Inductor'''. Its series resistor has two temperature coefficients: first-order TC1 temperature and second-order TC2. The value of the temperature-dependent resistance is computed using the quadratic equation:

R(T) = R(T0) * [ 1 + TC1 * (T - T0) + TC2 * (T-T0)^2 ]

The device's model includes a series resistance together with the inductor, and the combination in parallel with a shunt capacitance.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|Rdc||series resistance||Ω||10||
|-
|L||inductance||H||1||
|-
|Cp||capacitance||F||1p||
|-
|ic||current initial condition||A||0||
|-
|temp||operating temperature||deg C||27||
|-
|tc1||first-order temperature coefficient||Ω/°C||0.1||
|-
|tc2||second-order temperature coefficient||Ω/°C2||0.01||
|-
|}

==Real Resistor==

[[File:GK116.png]]

This is primarily a non-ideal, temperature-dependent resistor model. You can access it from the Parts Menu as '''User-Defined Resistor'''. It has two temperature coefficients: first-order TC1 temperature and second-order TC2. The value of the temperature-dependent resistance is computed using the quadratic equation:

R(T) = R(T0) * [ 1 + TC1 * (T - T0) + TC2 * (T-T0)^2 ]

The device's model includes a series inductance together with the resistor.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|R||resistance||Ω||1k||
|-
|Ls||inductance||H||1n||
|-
|temp||operating temperature||deg C||27||
|-
|tc1||first-order temperature coefficient||Ω/°C||0.1||
|-
|tc2||second-order temperature coefficient||Ω/°C2||0.01||
|-
|}

==Resistor==

[[File:GK119.png]]

Resistors are passive devices that dissipate power. Their resistance value varies depending on how much power they can dissipate and is measured
in Ohms. The transient, DC and AC behaviors of a resistor are all described by the same equation:

v = R * i

where v is the voltage across the resistor, i is the current passing through the resistor, and R is the resistance. The value of R must be nonzero.

All resistor names must begin with R.

Netlist Format:

R<device_name> <N+> <N-> <value>

Example:

R1 1 2 1k

[[RF.Spice A/D]] provides three types of resistor: Simple, User-Defined (Real Resistor) and Semiconductor. The resistance of the simple resistor is a single value expressed in Ohms. You can also set the Monte Carlo tolerance for this resistor.

==Schottky Diode==

[[File:GK80.png]]

The Schottky diode has the same model as the generic diode with a nonzero transit time (tt), a nonzero junction capacitance (cjo) and a typically larger saturation current (is), a lower junction potential (vj) and a smaller grading coefficient (m).

==Semiconducting Capacitor==

[[File:GK83.png]]

This is the more general form of the Capacitor model and allows for the calculation of the actual capacitance value from strictly geometric information and the specifications of the process.

General Form:

CXXXXXXX N1 N2 <VALUE> <MNAME> <L=LENGTH> <W=WIDTH> <IC=VAL>

If VALUE is specified, it defines the capacitance. If MNAME is specified, then the capacitance is calculated from the process information in the model MNAME and the given LENGTH and WIDTH. If VALUE is not specified, then MNAME and LENGTH must be specified. If WIDTH is not specified, then it is taken from the default width given in the model. Either VALUE or MNAME, LENGTH, and WIDTH may be specified, but not both sets. The optional initial condition "IC" is the initial voltage across the capacitor for transient simulations.

The capacitance is computed as:

CAP = CJ * (LENGTH - NARROW) * (WIDTH - NARROW)+ 2 * CJSW * (LENGTH + WIDTH - 2NARROW) * CAP

To modify the model parameters, first double click on the capacitor to edit its top-level model parameters. Then choose the button labeled {{key|Edit from Table}} in the process model section. This will open a window in which you can edit CJ, CJSW, NARROW, DEFW, and CAP.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|CJ||junction bottom capacitance||F/m2||-||
|-
|CJSW||junction sidewall capacitance||F/m ||-||
|-
|DEFW||default device width||m||1u||
|-
|NARROW||narrowing due to side etching||m||0||
|-
|CAP||nominal capacitance for Monte Carlo simulation||F||1||
|-
|}

== Semiconductor Resistor ==

[[File:GK82.png]]

This is the more general form of the resistor model and allows for the modeling of temperature effects and for the calculation of the actual resistance value from strictly geometric information and the specifications of the process.

General Form:

RXXXXXXX N1 N2 <VALUE> <MNAME> <L=LENGTH> <W=WIDTH> <TEMP=T>

If VALUE is specified, it overrides the geometric information and defines the resistance. If MNAME is specified, then the resistance may be calculated from the process information in the model MNAME and the given LENGTH and WIDTH. If VALUE is not specified, then MNAME and LENGTH must be specified. If WIDTH is not specified, then it is taken from the default width given in the model. The (optional) TEMP value is the temperature at which this device is to operate, and overrides the temperature specification in the SPICE Options Dialog.

The resistance is computed as:

R(T0) = (RSH) * [(L - NARROW) / (W - NARROW)] * RES

R(T) = R(T0) * [ 1 + TC1 * (T - T0) + TC2 * (T-T0)^2 ]

To modify the model parameters, first double click on the resistor to edit its top-level model parameters. Then choose the button labeled {{key|Edit from Table}} in the process model section. This will open a window in which you can edit TC1, TC2, RSH, RES, etc.

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|TC1||first order temperature coefficient||Ω/°C||-||
|-
|TC2||second order temperature coefficient||Ω/°C2||-||
|-
|RSH||sheet resistance||Ω/sq||-||
|-
|DEFW||default device width||m||1u||
|-
|NARROW||narrowing due to side etching||m||0||
|-
|TNOM||the parameter measurement temperature||deg C ||27||
|-
|RES||resistance multiplier for Monte Carlo simulation||Ohms||1||
|-
|}

== Silicon-Controlled Rectifier (SCR)==

[[File:GK109.png]]

This is a 3-pin parameterized Silicon-Controlled Rectifier (SCR) device with three pins: Anode (A), Cathode (K) and Gate (G). It is a unidirectional device which can conduct current only in one direction. The SCR can be triggered only by a positive current going into its gate. The device's model involves an NPN BJT and a PNP BJT. The forward beta parameters of the two transistors are set equal to 100 and 1, respectively. To changes these values, open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|rf||forward resistance||Ohms||1Meg||
|-
|rr||reverse resistance||Ohms||1Meg||
|-
|rgk||gate-to-cathode resistance||Ohms||100||
|-
|bvf||breakdown voltage of forward diode||V||100||
|-
|bvr||breakdown voltage of reverse diode||V||100||
|-
|bvgk||breakdown voltage of gate-to-cathode diode||V||5||
|-
|}

== SPDT Switch ==

[[File:GK72.png]]

This is a 5-pin device that models a single-pole double-throw switch. The input voltage is transferred to the first output pin if the control voltage is at a high state. Otherwise, its is transferred to the second output pin.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|von||turn-on voltage||V||3.3||
|-
|voff||turn-off voltage||V||0.3||
|-
|vt||threshold voltage||V||1.0||
|-
|ron||on resistance||Ohms||1.0||
|-
|roff||off resistance||Ohms||1Gig||
|-
|}

== SPST Switch ==

[[File:GK71.png]]

This is a 4-pin device that models a single-pole single-throw switch. It is virtually equivalent of the standard voltage-controlled switch.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|von||turn-on voltage||V||3.3||
|-
|voff||turn-off voltage||V||0.3||
|-
|vt||threshold voltage||V||1.0||
|-
|ron||on resistance||Ohms||1.0||
|-
|roff||off resistance||Ohms||1Gig||
|-
|}

==Tabulated Conductor==

[[File:GK92.png]]

The tabulated conductor model allows the conductance to be described by a table relating the device's current i(t) to its terminal voltage v(t). In effect, the conductance is defined as G = di(t)/dv(t). The model provides two interpolation options: cubic spline and piecewise linear. You can enter the (v,i) data pairs in the text box provided in the property dialog. Or you can import the data from a text file.

==Tabulated Resistor==

[[File:GK91.png]]

The tabulated resistor model allows the resistance to be described by a table relating the device's terminal voltage v(t) to its current i(t). In effect, the resistance is defined as R = dv(t)/di(t). The model provides two interpolation options: cubic spline and piecewise linear. You can enter the (i,v) data pairs in the text box provided in the property dialog. Or you can import the data from a text file.

==Tapped Inductor==

[[File:GK101.png]]

This 3-pin device models a tapped inductor with mutual coupling effect.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|Lt||total inductance||H||1m||
|-
|ratio||ratio of number of turns between positive terminal and tap to total number of turns||-||0.5||
|-
|k||coefficient of coupling||-||1.0||
|-
|}

== Temperature-Dependent Current Source ==

[[File:GL14.png]]

This is a current source whose current is an arbitrary function of the circuit temperature. You have to open the subcircuit model dialog by clicking the {{key|Edit Model...}} button and edit its text. Enter any mathematical expression in the variable "v(T)" standing for temperature. Note that the circuit temperature is set and controlled by the parameter "temp" in the Miscellaneous tab of the SPICE [[Simulation Options]] dialog.

Examples:

* v(T) is equivalent to f(T) = T.
* 1 + 0.1*(v(t))^2 is equivalent to f(T) = 1 + 0.1T.

Parameters:

None

== Temperature-Dependent Voltage Source ==

[[File:GL13.png]]

This is a voltage source whose voltage is an arbitrary function of the circuit temperature. You have to open the subcircuit model dialog by clicking the {{key|Edit Model...}} button and edit its text. Enter any mathematical expression in the variable "v(T)" standing for temperature. Note that the circuit temperature is set and controlled by the parameter "temp" in the Miscellaneous tab of the SPICE [[Simulation Options]] dialog.

Examples:

* v(T) is equivalent to f(T) = T.
* 1 + 0.1*(v(t))^2 is equivalent to f(T) = 1 + 0.1T.

Parameters:

None

==Thermometer==
[[File:G115.png]]

The Thermometer is a two-pin device that measures the operating temperature of a circuit. The voltage across the device pins is equal to SPICE's operating temperature in degrees centigrade. The output voltage of the Thermometer can be used in conjunction with linear or nonlinear dependent sources to model temperature-dependent quantities.

Model Identifier: thermo

Parameters:

This device has no parameters.

== Triac Thyristor ==

[[File:GK110.png]]

This is a 3-pin bidirectional thyristor device that conducts current in either direction when triggered. A thyristor is analogous to a relay in that a small voltage and current can control a much larger voltage and current. The triac has two anode pins termed Main Terminal 1 (MT1) and Main Terminal 2 (MT2) and a Gate (G) pin. In order to create a triggering current for a triac, either a positive or negative voltage can be applied to the gate. Once triggered, the thyristor continues to conduct, even if the gate current ceases, until the main current drops below a certain level called the holding current. The device's model involves two NPN BJT transistors and two PNP BJT transistors. The forward beta parameters of the NPN and PNP transistors are set equal to 20 and 5, respectively. To changes these values, open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|rf||forward resistance||Ohms||1Meg||
|-
|bvf||breakdown voltage of forward diodes||V||100||
|-
|rh||resistance controlling reverse holding current||Ohms||100||
|-
|rgp||resistance controlling forward holding current and trigger current||Ohms||50||
|-
|}

==Uniform RC Transmission Line==

[[File:G23.png]]

The standard parameters are L, and N. They are described below:

Two of the nodes are the element nodes connected by the RC line. The third is the node to which the capacitances
are connected. L is the length of the RC line in meters. N is the number of lumped segments to use in
modeling the RC line.

This device is derived from a model proposed by Gertzberrg. It expands the URC line into a network of
lumped RC segments with internally generated nodes. These segments increase toward the middle of the
URC line in a geometric progression with K as the proportionality constant.

The URC line is made up entirely of resistor and capacitor segments, unless the ISPERL parameter has a
non-zero value. In this case, capacitors are replaced by reverse biased diodes with an equivalent zero-bias
junction capacitance, a saturation current of ISPERL amps per meter of transmission line, and optional
series resistance of RSPERL ohms per meter.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!EXAMPLE
|-
|K||propagation constant||-||2||1.2
|-
|FMAX||maximum frequency of interest||Hz||1.0G||6.5Meg
|-
|RPERL||resistance per unit length||Ohm /m||1000||10
|-
|CPERL||capacitance per unit length||F/m||1.0e-15||1pF
|-
|ISPERL||saturation current per unit length||A/m||0||-
|-
|RSPERL||diode resistance per unit length||Ohm/m||0||-
|-
|}

==Varactor Diode==

[[File:GK81.png]]

A varactor diode is a combination of the generic diode with additional package inductance, package capacitance and a series resistance. This diode device has a typically large value of junction capacitance (cjo).

Parameters (in addition to standard diode parameters):

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|q||quality factor||-||5000||
|-
|f0||frequency of Q-factor specification||Hz||50Meg||
|-
|ls||package inductance||H||0.5n||
|-
|cp||package capacitance ||F||0.05p||
|-
|}

==Voltage-Controlled Capacitor==

[[File:GK85.png]]

This 3-pin device models a voltage-controlled two-terminal capacitor whose capacitance is linearly proportional to a control voltage that is applied to a third (CTRL) pin. The proportionality constant is a conversion factor which you need to specify in F/V.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|K_C||conversion factor||F/V||1.0||
|-
|}

==Voltage-Controlled Inductor==

[[File:GK86.png]]

This 3-pin device models a voltage-controlled two-terminal inductor whose inductance is linearly proportional to a control voltage that is applied to a third (CTRL) pin. The proportionality constant is a conversion factor which you need to specify in H/V.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|K_L||conversion factor||H/V||1.0||
|-
|}

==Voltage-Controlled Resistor==

[[File:GK84.png]]

This 3-pin device models a voltage-controlled two-terminal resistor whose resistance is linearly proportional to a control voltage that is applied to a third (CTRL) pin. The proportionality constant is a conversion factor which you need to specify in Ω/V.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|K_r||conversion factor||Ω/V||1.0||
|-
|}

==Voltage-Controlled Switch==

[[File:G19.png]]

Switches are devices that exhibit high resistance when open (OFF state) and low resistance when closed (ON state). The switch model allows an almost ideal switch to be specified. With careful selection of the on and off resistances, they can effectively represent zero and infinite resistances in comparison to other circuit elements, while sustaining the model condition of a positive, finite value.

There are two versions of Voltage-Controlled Switch: two-terminal and four-terminal. For the two-terminal device, you must specify the name of the controlling Voltmeter or controlling voltage nodes, as well as the turn-on and turn-off voltages in Volts and on and off resistance values in Ohms. The four-terminal device already provides nodes for a controlling voltmeter, and you just specify the rest of [[parameters]]. When the voltage across the switch or controlling device is greater or equal to the turn-on current, the switch closes. When the voltage across the switch or controlling device is less than or equal to the turn off current, the switch opens.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|V_ON||turn-on voltage||V||0.5||
|-
|V_OFF||turn-off voltage||V||0.0||
|-
|RON||on resistance||Ohms||1.0||
|-
|ROFF||off resistance||Ohms||1G||
|-
|}

==Voltage Noise Source==

[[File:GL15.png]]

This is a voltage noise generator characterized by a spectral density and corner frequency. You have to click the {{key|Edit Model...}} button to access the parameters of this device.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|En||noise voltage||V/√Hz||1n||required
|-
|freq||noise corner frequency||Hz||100||required
|-
|}

==Voltage Source==

[[File:G17A.png]]

A voltage source has a DC value, a transient behavior, an AC behavior, and distortion parameters. The transient type, AC parameters, and distortion parameters are defined on the first tab of the source's property dialog. The transient expression can be a pulse, sinusoid, exponential, or piecewise linear. The DC value of a voltage source is its initial transient value. For a source with a sinusoidal transient behavior, for example, the DC value will be equal to its transient offset voltage. The AC parameters are magnitude and phase. These are used during the AC Frequency Sweep analysis. The distortion parameters, two sets of magnitude and phase, are used during the distortion analysis. The AC and distortion parameters are defined on the second tab of the source's property dialog.

==XSpice Devices and their models==

XSpice devices have the following form:

A<device_name> <node1> <node2> ... <model_name>


e.g., A2 1 2 transfer_function

Note that XSpice devices must start with the "A" designation, much as a resistor starts with
an "R". Some devices will have grouped (or vector) pins and are designated by being placed
inside square brackets. In the example shown below, the 1 and 2 pins are grouped. Pin 3 is not. 


A1 [1 2] 3 summer 

Some models will have voltage differential pairs of pins and will be denoted by a %vd( ). In the following
example pins 1 and 4 are differential pairs, as well as pins 2 and 3. Differential pairs must go between
parentheses ().


A1 %vd(1 4) %vd(2 3) triangle 

Refer to individual devices for more information.

Each XSpice device will also have a model associated with it. Each model will have the following form:


.model <model_name> <model_identifier> {<pname1 = pval1>} {<pname2 = pval2>}
...


e.g., .model transfer_function s_xfer in_offset = 0.0 gain = 1.0

Model_name refers to the name given in the device line. Model_identifier is an internal designation and
must be of an existing designation Refer to each device's example for the correct designation.

Parameter values are optional. If they aren't specified, then the default will be used. Some devices
have parameters that require a value and must be specified. Refer to individual devices for any required parameters.

==Zener Diode==

[[File:G10.png]]

The Zener Diode models the DC characteristics of most zeners. Since most data sheets for zener diodes do
not give detailed characteristics in the forward region, only a single point defines the forward characteristicThe
saturation current refers to the relatively constant reverse current that is produced when the voltage
across the zener is negative, but breakdown has not been reached. The reverse leakage current determines
the slight increase in reverse current as the voltage across the zener becomes more negative. It is modeled
as a resistance parallel to the zener with value v_breakdown / i_rev.

Note that the limt_switch parameter engages an internal limiting function for the zener. This can, in
some cases, prevent the simulator from converging to an unrealistic solution if the voltage across or
current into the device is excessive. If use of this feature fails to yield acceptable results, the convlimit
option should be tried (add the following statement to the SPICE input deck: .options convlimit)

Model Identifier: zener

Netlist Format:

A<device_name> <z_pin> <z_out_pin> <model_name>

.model <model_name> zener v_breakdown = 1 {<param1 = value> < param2 = value> ...}

Example:

A1 1 2 zener

.model zener zener v_breakdown = 1

Parameters:

{| class="wikitable"
|-
!Name!!Description!!Default!!Notes
|-
|v_breakdown||breakdown voltage||1||required
|-
|i_breakdown||breakdown current||2.0e-2||
|-
|i_sat||saturation current||1.0e-12||
|-
|N_forward||forward emission coefficient||1.0||
|-
|limit_switch||switch for on-board limiting (convergence aid)||False||
|-
|}

 
[[Image:Back_icon.png|40px]] '''[[RF.Spice_A/D | Back to RF.Spice A/D Wiki Gateway]]'''

RF.Spice A/D Glossary

2024-10-07T15:11:18Z

Asabet:

==4-Bit ADC Bridge==

[[File:GK44.png]]

This 8-pin device is simply a bundle of 4 1-bit ADC bridges. Each analog input pin has a corresponding digital output pin.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|in_low||maximum 0-valued analog input||V||0.1||required
|-
|in_high||minimum 1-valued analog input||V||0.9||required
|-
|}

==4-Bit DAC Bridge==

[[File:GK45.png]]

This 8-pin device is simply a bundle of 4 1-bit DAC bridges. Each digital input pin has a corresponding analog output pin.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|out_low||analog output for 0 digital input||V||0||required
|-
|out_high||analog output for 1 digital input||V||1||required
|-
|}

== AC/RF Current Source ==

[[File:GL11.png]]

This is a simplified version of the standard Current Source, in which the AC "Use" box has been checked by default. Therefore, it is ready to be used for AC frequency sweep. Note that for AC frequency sweep, you do not need to specify the frequency.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|VA||peak current amplitude||A||1||required
|-
|Freq||frequency ||Hz||1||required
|-
|Phase||phase||deg||0||
|-
|offset||DC offset for small-signal current||A||0||
|-
|}

== AC/RF Voltage Source ==

[[File:GL10.png]]

This is a simplified version of the standard Voltage Source, in which the AC "Use" box has been checked by default. Therefore, it is ready to be used for AC frequency sweep. Note that for AC frequency sweep, you do not need to specify the frequency.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|VA||peak voltage amplitude||V||1||required
|-
|Freq||frequency ||Hz||1||required
|-
|Phase||phase||deg||0||
|-
|offset||DC offset for small-signal voltage||V||0||
|-
|}

==Alternate Ferrite Core Transformer==

[[File:GK96.png]]

The alternate ferrite core transformer is a four-pin two-port device, which has the same behavior as the [[Glossary of Generic Analog & Mixed-Mode Devices#Ferrite_Core_Transformer | Ferrite Core Transformer]], except for the reversed polarity of its secondary port.

==Alternate Ideal Transformer==

[[File:XFMR2.png]]

The alternate ideal transformer is a four-pin two-port device, which has the same behavior as the [[Glossary of Generic Analog & Mixed-Mode Devices#Ideal_Transformer | Ideal Transformer]], except for the reversed polarity of its secondary port.

== AM Modulated Source ==

[[File:GL23.png]]

This is a voltage source with a single-tone amplitude modulated waveform. The AM modulation index MDI is defined as the ratio of maximum amplitude deviation to maximum signal amplitude.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|V0||offset||V||0||
|-
|VA||amplitude||V||1||
|-
|FC||carrier frequency ||Hz||1||required
|-
|MDI||modulation index||-||0||required
|-
|FS||signal frequency ||Hz||1||required
|-
|}

== Analog Clock ==

[[File:GL30.png]]

This is a periodic pulse generator with a default 0V low output level and a default 5V high output level.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|delay||delay time||sec||0||
|-
|rise||rise time||sec||0.1n||
|-
|fall||fall time||sec||0.1n||
|-
|pulse_wid||clock pulse width||sec||1u||required
|-
|period||clock period||-||2u||required
|-
|out_low||low output voltage level||V||0||
|-|-
|out_high||high output voltage level||V||5||
|-
|}

==Analog-to-Digital Converter (ADC) Bridge==
[[File:GK42.png]]

The ADC Bridge takes an analog value from an analog node and may be in the form of a voltage or current.
If the input is less than or equal to "in_low", then a digital "0" is generated. If
the input is greater than or equal to "in_high", a digital "1" is generated. Otherwise,
a digital "UNKNOWN" is the output value. Unlike the DAC Bridge, ramping or delay is not applicable.
Rather, the continuous ramping of the input provides for any associated delays in the digitized signal.

This model also posts an input load value based on the parameter input_load.

Model Identifier: adc_bridge

Netlist Format:

A<device_name> [<in_pin> {<in2_pin>> ...}] [<out_pin> {<out2_pin> ...}] <model_name>

.model <model_name> adc_bridge {<param1 = value> < param2 = value> ...}

Example:

A [1] [2] adc_bridge

.model adc_bridge adc_bridge in_low = .1 fall_delay = 1n

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|in_low||maximum 0-valued analog input||V||0.1||required
|-
|in_high||minimum 1-valued analog input||V||0.9||required
|-
|rise_delay||L-to-H delay time||sec||1n||
|-
|fall_delay||H-to-L delay time||sec||1n||
|-
|}

== Arbitrary Temporal Waveform Generator ==

[[File:GL17.png]]

This is a voltage source with an arbitrary waveform defined by a mathematical expression. You have to open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text. Enter any mathematical expression in the variable "v(t)" standing for time.

Examples:

* v(t) is equivalent to f(t) = t.
* 0.1*(v(t))^2 is equivalent to f(t) = 0.1t^2.
* sin(2*pi*v(t)) is equivalent to f(t) = sin(2πt).

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|Tmax||maximum signal duration||sec||1e6||required
|-
|}

==Auto-Transformer==

[[File:GK102.png]]

This 3-pin device models an auto-transformer with mutual coupling effect.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|Lp||primary inductance||H||1m||
|-
|Ls||secondary inductance||H||1m||
|-
|k||coefficient of coupling||-||1.0||
|-
|}

==Bipolar Junction Transistor (BJT)==
[[File:G11.png]]

The BJT is an active device which has up to 4 pins. The three standard pins are base, emitter, and collector. These are given in the default symbol. The substrate, which is grounded by default, is the fourth pin. To use the BJT with the substrate, create a new 4-pin BJT using the Device Editor and Symbol Editor.

The standard device parameters are AREA, OFF, IC, and T. They are described below:

{| class="wikitable"
|-
|AREA||area factor (optional) (If not specified, the default value is 1.0.)
|-
|OFF||initial condition for the DC analysis (optional)
|-
|IC||initial condition (optional) (Used when a transient analysis is desired, which starts from other than the quiescent operating point.)
|-
|T||operating temperature of the device (optional)
|-
|}

Area factor scales the model parameters RE and RC. IC VBE is the initial voltage from base emitter. IC VCE is the initial voltage from collector to emitter. TEMP is the overriding temperature. These parameters are based on the Gummel and Poon integral-charge model. If these parameters are not specified, then it will reduce to the simpler Ebers-Moll model.

The process model is mandatory for the BJT. Descriptions of the process model parameters are given in the following table:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!EXAMPLE
|-
|IS||transport saturation current||A||1.0e-16||1.0e-15
|-
|BF||ideal maximum forward beta|| ||100||100
|-
|NF||forward current emission coefficient|| ||1.0||1
|-
|VAF||forward Early voltage||V||infinite||200
|-
|IKF||corner forward beta high current roll-off||A||infinite||0.01
|-
|ISE||B-E leakage saturation current||A||0||1.0e-13
|-
|NE||B-E leakage emission coefficient|| ||1.5||2
|-
|BR||ideal maximum reverse beta|| ||1||0.1
|-
|NR||reverse current emission coefficient|| ||1||1
|-
|VAR||reverse Early voltage||V||infinite||200
|-
|IKR||corner reverse beta high current roll-off||A||infinite||0.01
|-
|ISC||B-C leakage saturation current||A||0||1.0e-13
|-
|NC||B-C leakage emission coefficient|| ||2||1.5
|-
|RB||zero bias base resistance||ohms||0||100
|-
|IRB||current where base resistance falls halfway to minimum value||A||infinite||0.1
|-
|RBM||minimum base resistance at high currents||ohms||RB||10
|-
|RE||emitter resistance||ohms||0||1
|-
|RC||collector resistance||ohms||0||10
|-
|CJE||B-E zero bias depletion capacitance||F||0||2pF
|-
|VJE||B-E built-in potential||V||0.75||0.6
|-
|MJE||B-E junction exponential factor|| ||0.33||0.33
|-
|TF||ideal forward transit time||sec||0||0.1ns
|-
|XTF||coefficient for bias dependence of TF|| ||0||
|-
|VTF||voltage describing VBC dependence of TF||V||infinite||
|-
|ITF||high-current parameter for effect on TF||A||0||
|-
|PTF||excess phase at freq=1.0/(TF*2PI)Hz||degree||0||
|-
|CJC||B-C zero bias depletion capacitance||F||0||2pF
|-
|VJC||B-C built-in potential||V||0.75||0.5
|-
|MJC||B-C junction exponential factor|| ||0.33||0.5
|-
|XCJC||fraction of B-C depletion capacitance connected to internal base node|| ||1||
|-
|TR||ideal reverse transit time||sec||0||10ns
|-
|CJS||zero bias collector-substrate capacitance||F||0||2pF
|-
|VJS||substrate junction built-in potential||V||0.75||
|-
|MJS||substrate junction exponential factor|| ||0||0.5
|-
|XTB||forward and reverse beta temp. exponent|| ||0||
|-
|EG||energy gap for temperature effect on IS||eV||1.11||
|-
|XTI||temperature exponent for effect on IS|| ||3||
|-
|KF||flicker-noise coefficient|| ||0||
|-
|AF||flicker-noise exponent|| ||1||
|-
|FC||coefficient for forward bias depletion capacitance formula|| ||0.5||
|-
|TNOM||parameter measurement temperature||deg. C||27||50
|-
|}

==Capacitance Meter==
[[File:G37.png]]

The Capacitance Meter measures the total capacitance between a circuit node and the ground. The input pin of the device is connected to the measurement node. The output voltage of the device is then a scaled value equal to the total capacitance seen on its input multiplied by the gain parameter. This model is primarily intended as a building block for other models which must sense a capacitance value and alter their behavior based upon it.

Model Identifier: cmeter

Netlist Format:

A<device_name> <in_pin> <out_pin> <model_name>

.model <model_name> cmeter {<gain = value>}

Example:

A1 1 2 cap_meter

.model cap_meter cmeter gain = 1

Parameters:

The only parameter is the gain with a default value of 1.0.

==Capacitor==
[[File:GK120.png]]

Capacitors are used to store electrical energy. They can filter or remove AC signals or block DC current without disrupting AC signals. A capacitor's ability to store energy is termed capacitance and is measured in Farads, with values from pF to mF. The only time current flows through a capacitor is when the charge is collected on, or is removed from, its parallel plates. This means that the voltage across the capacitor is changing, which doesn't conform to DC analysis. In a physical circuit, there is a transition stage during which capacitors charge up to their final values. The result is the same as if these capacitors did not exist and the connections to them were left dangling. In other words, in a (steady-state) DC analysis, a capacitor behaves like an open circuit. Therefore, it is important that no section of the circuit is isolated from the capacitors. Every circuit node needs some path for DC current to the ground.

A capacitor's transient behavior is described by the equation:

i(t) = C * (dv(t)/dt)

Its initial voltage is only important when the simulator performs a transient analysis, and the "Use Initial Conditions" checkbox is checked.

An capacitor's AC behavior is described by the equation:

i = j ω * C * v

All capacitor names must begin with C.

Netlist Format:

C<device_name> <N+> <N-> <value>

Example:

C1 1 2 10p

[[RF.Spice A/D]] provides three types of capacitors: simple, user-defined (or real) and semiconductor. The standard capacitor parameters are N+, N-, VALUE, and IC. In a simple capacitor, VALUE must
be specified for the capacitance in Farads. IC is the (optional) initial condition for the capacitor voltage.

==Center-Tapped Ferrite Core Transformer==

[[File:GK97.png]]

This five-pin three-port device models a center-tapped physical transformer with a magnetic ferrite core. Its model is based on XSPICE's magnetic core and inductive coupling models. For this device you need to specify physical parameters like cross sectional area, core length and number of primary and secondary turns. The physical model of the magnetic device is defined by two vectors: magnetic field intensity H in A/m and magnetic flux density B (also known as magnetic induction) in Tesla. The default array values are:

H_array = [-250 -100 -50 -37.5 -25 -12.5 0 12.5 25 37.5 50 100 250]

B_array = [-0.375 -0.36 -0.32 -0.29 -0.24 -0.15 0 0.15 0.24 0.29 0.32 0.36 0.375]

To change the value of H/B arrays, open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|n_prim||number of primary inductor coupling turns||-||100||required
|-
|n_sec||number of full-winding secondary inductor coupling turns||-||100||required
|-
|area||cross-sectional area||m2||1e-5||
|-
|length||core length||m||0.01||
|-
|}

==Controlled Sine Wave Oscillator==

[[File:G24.png]]

This is a four-terminal function generator with a sinusoidal wave output, whose frequency is controlled by an input voltage. The functional dependency of the output frequency on the input voltage is piecewise linear and is defined as a two-dimensional table similar to a piecewise linear (PWL) controlled source. In the "frequency vs. voltage" curve, the array "cntl_array" defines voltage values in Volts and the array "freq_array" defines the corresponding frequencies in Hz.
This function has parameterizable values of low and high peak output voltage.

Model Identifier: sine

Netlist Form:

A<device_name> %vd(<cntl_in_pin> <cntl_in_ref_pin>) %vd(<out_pin>
<out_ref_pin>) <model_name>

.model <model_name> sine cntl_array = [<value1> <value2>]
freq_array = [<value1> <value2>] {<param1 = value> < param2 = value> ...}

Example:

A1 %vd(1 3) %vd(2 4) sine

.model sine sine cntl_array = [0 1] freq_array = [1 1000]

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|Cntl_array||control array||V||[0 1]||required
|-
|Freq_array||frequency array||Hz||[1 1000]||required
|-
|Out_low||output peak low value||V||-1.0||
|-
|Out_high||output peak high value||V||1.0||
|-
|}

==Controlled Sources==

Circuits can contain linear dependent sources characterized by one of the following equations (where g,
e, f, and h are constants representing transconductance, voltage gain, current gain, and transresistance,
respectively):

iout = g vin
     vout = e vin
     iout = f iin
     vout = h iin

For further information, refer to:

Linear Current Controlled Current Source (CCCS)

Linear Voltage Controlled Current Source (VCCS)

Linear Current Controlled Voltage Source (CCVS)

Linear Voltage Controlled Voltage Source (VCVS)

==Controlled Square Wave Oscillator==

[[File:G25.png]]

This is a four-terminal function generator with a square wave output, whose frequency is controlled by an input voltage. The functional dependency of the output frequency on the input voltage is piecewise linear and is defined as a two-dimensional table similar to a piecewise linear (PWL) controlled source. In the "frequency vs. voltage" curve, the array "cntl_array" defines voltage values in Volts and the array "freq_array" defines the corresponding frequencies in Hz.

Model Identifier: square

Netlist Format:

A<device_name> %vd(<cntl_in_pin> <cntl_in_ref_pin>) %vd(<out_pin>
<out_ref_pin>) <model_name>

.model <model_name> square cntl_array = [<value1> <value2>] freq_array = [<value1> <value2>] {<param1 = value> < param2 = value> ...}

Example:

A1 %vd(1 3) %vd(2 4) square

.model square square cntl_array = [0 1] freq_array = [1 1000]

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|Cntl_array||control array||V||[0 1]||required
|-
|Freq_array||frequency array||Hz||[0 1000]||required
|-
|Out_low||output peak low value||V||-1.0||
|-
|Out_high||output peak high value||V||1.0||
|-
|Duty_cycle||Duty cycle||-||0.5||
|-
|Rise_time||Output rise time||sec||1.0e-9||
|-
|Fall_time||Output fall time||sec||1.0e-9||
|-
|}

==Controlled Triangle Wave Oscillator==

[[File:G26.png]]

This is a four-terminal function generator with a triangle wave output, whose frequency is controlled by an input voltage. The functional dependency of the output frequency on the input voltage is piecewise linear and is defined as a two-dimensional table similar to a piecewise linear (PWL) controlled source. In the "frequency vs. voltage" curve, the array "cntl_array" defined voltage values in Volts and the array "freq_array" defines the corresponding frequencies in Hz.

Model Identifier: triangle

Netlist Format:

A<device_name> %vd(<cntl_in_pin> <cntl_in_ref_pin>) %vd(<out_pin>
<out_ref_pin>) <model_name>

.model <model_name> tirangle cntl_array = [<value1> <value2>]
freq_array = [<value1> <value2>]{<param1 = value> < param2 = value> ...}

Example:

A1 %vd(1 4) %vd(2 3) triangle

.model triangle triangle cntl_array = [0 1] freq_array = [1 1000]

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|Cntl_array||control array||V||[0 1]||required
|-
|Freq_array||frequency array||Hz||[0 1000]||required
|-
|Out_low||output peak low value||V||-1.0||
|-
|Out_high||output peak high value||V||1.0||
|-
|Rise_duty||Rise time duty cycle||0.5||
|-
|}

== Crystal ==

[[File:GK78.png]]

This is a 2-pin parameterized crystal device.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|CM||motional capacitance||F||10f||
|-
|C0||shunt capacitance||F||1p||
|-
|RM||motional resistance||Ohms||100||
|-
|LM||motional inductance||H||100m||
|-
|}

==Current Noise Source==

[[File:GL16.png]]

This is a current noise generator characterized by a spectral density and corner frequency. You have to click the {{key|Edit Model...}} button to access the [[parameters]] of this device.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|En||noise current||A/√Hz||1p||required
|-
|freq||noise corner frequency||Hz||100||required
|-
|}

==Current Source==

[[File:G17B.png]]

Current source has a DC value, a transient behavior, an AC behavior, and distortion parameters. The transient type, AC parameters, and distortion parameters are defined on the first tab of the source's property dialog. The transient expression can be a pulse, sinusoid, exponential, or piecewise linear. The DC value of a current source is its initial transient value. For a source with a sinusoidal transient behavior, for example, the DC value will be equal to its transient offset current. The AC parameters are magnitude and phase. These are used during the AC Frequency Sweep analysis. The distortion parameters, two sets of magnitude and phase, are used during the distortion analysis. The AC and distortion parameters are defined on the second tab of the source's property dialog.

==Current-Controlled Switch==

[[File:G20.png]]

Switches are devices that exhibit high resistance when open (OFF state) and low resistance when closed (ON state). The switch model allows an almost ideal switch to be specified. With careful selection of the on and off resistances, they can effectively represent zero and infinite resistances in comparison to other circuit elements, while sustaining the model condition of a positive, finite value.

There are two versions of Current-Controlled Switch: two-terminal and four-terminal. For the two-terminal device, you must specify the name of the controlling Ammeter or voltage source, as well as the turn-on and turn-off currents in Amperes and on and off resistance values in Ohms. The four-terminal device already provides nodes for a controlling ammeter, and you just specify the rest of [[parameters]]. When the current through the switch or controlling device is greater or equal to the turn-on current, the switch closes. When the current through the switch or controlling device is less than or equal to the turn off current, the switch opens.

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|I_ON||turn-on current||A||0.0||
|-
|I_OFF||turn-off current||A||0.0||
|-
|RON||closed resistance||Ohms||1.0||
|-
|ROFF||open resistance||Ohms||1/GMIN||
|-
|}

==Darlington Pair==

[[File:GK108.png]]

A Darlington pair is a three-pin device that consists of two interconnected BJT transistors of the same type. The collectors of two transistors are connected together to provide the "Collector" pin of the pair. The base of the first BJT acts the "Base" pin of the pair. The emitter of the first BJT is internally connected to the base of the second BJT. The emitter of the second BJT acts as the "Emitter" pin of the pair. There are two types of Darlington pair: NPN and PNP. The parameterized generic Darlington pair also contains a diode connected between the collector and emitter pin as well as two base-emitter resistors, one across each BJT.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|is_bjt||bjt saturation current||A||1.0e-12||
|-
|bf_bjt||bjt forward beta||-||150||
|-
|nf_bjt||bjt forward emission coefficient||-||1||
|-
|ise_bjt||B-E leakage saturation current||A||0||
|-
|ne_bjt||B-E leakage emission coefficient||-||1||
|-
|br_bjt||ideal maximum reverse beta||-||1||
|-
|nr_bjt||reverse current emission coefficient||-||1||
|-
|isc_bjt||B-C leakage saturation current||A||0||
|-
|nc_bjt||B-C leakage emission coefficient||-||1||
|-
|rb_bjt||zero bias base resistance||Ohms||0||
|-
|irb_bjt||current where base resistance falls halfway to minimum value||A||inf||
|-
|rbm_bjt||minimum base resistance at high currents||ohms||0||
|-
|re_bjt||emitter resistance||Ohms||0||
|-
|rc_bjt||collector resistance||Ohms||0||
|-
|cje_bjt||B-E zero bias depletion capacitance||F||0||
|-
|vje_bjt||B-E built-in potential||V||0.75||
|-
|mje_bjt||B-E junction grading coefficient||-||0.33||
|-
|cjc_bjt||B-C zero bias depletion capacitance||F||0||
|-
|vjc_bjt||B-C built-in potential||V||0.75||
|-
|mjc_bjt||B-C junction exponential factor||-||0.33||
|-
|tf_bjt||ideal forward transit time||sec||0||
|-
|tr_bjt||ideal reverse transit time||sec||0||
|-
|is_d||diode saturation current||A||1.0e-12||
|-
|rs_d||diode resistance||Ohms||0||
|-
|n_d||diode emission coefficient||-||1||
|-
|cjo_d||diode junction capacitance||F||0||
|-
|vj_d||diode junction potential||V||1||
|-
|m_d||diode grading coefficient|| ||0.5||
|-
|tnom||parameter measurement temperature||deg C||27||
|-
|r1||first base-emitter resistance||Ohms||1k||
|-
|r2||second base-emitter resistance||Ohms||1k||
|-
|}

==D Flip-Flop==

[[File:G52.png]]

The digital D-type flip-flop is a one-bit, edge-triggered storage element which stores data whenever the clock (CLK) input line transitions from 0 (low) to 1 (high). In addition, there are asynchronous set and reset signals, which are independent of the clock. When SET = RESET = 0, the data on the D line is transferred to the output Q on the rising edge of the clock. The combination SET = 1 and RESET = 0, causes Q = 1. The combination SET = 0 and RESET = 1 causes Q = 0. The combination SET = RESET = 1 is illegal and is resolved by setting both outputs Q and Q_bar to 1.

Truth Table:

<table>
<tr>
<td>
{| class="wikitable"
|-
! CLK !! D !! Q !! Notes
|-
|[[File:NonRising.png]] || X || Qprev || Hold State
|-
|[[File:Rising.png]] || 0 || 0 || Data Transfer
|-
|[[File:Rising.png]] || 1 || 1 || Data Transfer
|-
|}
</td>
</tr>
</table>

==D Latch==

[[File:G54.png]]

The digital D-type latch is a one-bit, level-sensitive storage element which outputs the value on the data (D) line whenever the enable (EN) input line is 1 (high). The value on the data line is stored, i.e., held on the output (Q) line whenever the enable (EN) line is 0 (low). In addition, there are set and reset signals, which are independent of the enable line. When SET = RESET = 0, the data on the D line is transferred to the output Q whenever EN = 1. The combination SET = 1 and RESET = 0, causes Q = 1. The combination SET = 0 and RESET = 1 causes Q = 0. The combination SET = RESET = 1 is illegal and is resolved by setting both outputs Q and Q_bar to 1.

Truth Table:

<table>
<tr>
<td>
{| class="wikitable"
|-
! EN !! D !! Q !! Notes
|-
|0 || X || Qprev || Hold State
|-
|1 || 0 || 0 || Reset
|-
|1 || 1 || 1 || Set
|-
|}
</td>
</tr>
</table>

== DC Bias Sources Vcc, Vee, Vdd, Vss ==

[[File:GL12.png]]

These are simple 1-pin DC voltage sources. Vcc and Vdd provide a positive voltage, while Vee and Vss provide a negative voltage

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|vcc||bias voltage||V||+15||required
|-
|vee||bias voltage||V||-15||required
|-
|vdd||bias voltage||V||+15||required
|-
|vss||bias voltage||V||-15||required
|-
|}

==Digital-to-Analog Converter (DAC) Bridge==

[[File:GK43.png]]

The DAC Bridge takes a digital value from a digital node and can only be eiter "0", "1",
or "U". It then outputs the value "out_low", "out_high" or "out_udndef",
or ramps linearly toward one of these "final" values from its curent analog output level. This
ramping speed depends on the values of "t_rise" and "t_fall".

Model Identifier: dac_bridge

Netlist Format:

A<device_name> [<in_pin> {<in2_pin>> ...}] [<out_pin> {<out2_pin> ...}] <model_name>

.model <model_name> dac_bridge {<param1 = value> < param2 = value> ...}

Example:

A [1] [2] dac_bridge

.model dac_bridge dac_bridge out_low = 0 fall_delay = 1n

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|out_low||analog output for 0 digital input||V||0||required
|-
|out_high||analog output for 1 digital input||V||1||required
|-
|out_undef||analog output for undefined digital input||V||0.5||required
|-
|input_load||capacitive input load||F||1p||
|-
|t_rise||L-to-H delay time||sec||1n||
|-
|t_fall||H-to-L delay time||sec||1n||
|-
|}

==Diode==

[[File:G9.png]]

Diodes allow current flow only in one direction, following their symbol's arrow, and thus can be used as simple solid
state switches in AC circuits.

The standard device parameters are AREA, OFF, IC, and T. They are described below:

{| class="wikitable"
|-
|AREA||area factor (optional) (If not specified, the default value is 1.0.)
|-
|OFF||initial condition for the DC analysis (optional)
|-
|IC||initial condition (optional) (Used when a transient analysis is desired, which starts from other than the quiescent operating point.)
|-
|T||operating temperature of the device (optional)
|-
|}

The process models can be either junction diodes or Schottky barrier diodes. Area factor scales the model parameters
IS, RS, CJO, and IBV. VD is the initial voltage, and TEMP is the overriding temperature. Descriptions of the process model parameters are given in the following table:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|IS||saturation current||A||1e-14||
|-
|TNOM||parameter measurement temperature||deg C||27||
|-
|RS||ohmic resistance||Ohms||0||
|-
|N||emission coefficient||-||1||
|-
|TT||transit-time||sec||0||
|-
|CJO||zero-bias junction capacitance||F||0||
|-
|VJ||junction potential||V||1||
|-
|M||grading coefficient||-||0.5||
|-
|EG||activation energy||eV||1.11||
|-
|XTI||saturation current temp. exp.||-||3.0||
|-
|KF||flicker noise coefficient||-||0||
|-
|AF||flicker noise exponent||-||1||
|-
|FC||forward bias junction fit parameter||-||0.5||
|-
|BV||reverse breakdown voltage||V||inf||
|-
|IBV||current at breakdown voltage||A||1e-3||
|-
|}

==Diode Bridge==

[[File:GK107.png]]

This four-pin device is a bridge configuration of four generic diodes.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|IS||saturation current||A||1e-14||
|-
|RS||ohmic resistance||Ohms||0||
|-
|N||emission coefficient||-||1||
|-
|TT||transit-time||sec||0||
|-
|CJO||zero-bias junction capacitance||F||10p||
|-
|VJ||junction potential||V||1||
|-
|M||grading coefficient||-||0.5||
|-
|BV||reverse breakdown voltage||V||1000||
|-
|IBV||current at breakdown voltage||A||1e-3||
|-
|TNOM||parameter measurement temperature||deg C||27||
|-
|}

==Doubly Center-Tapped Ferrite Core Transformer==

[[File:GK98.png]]

This six-pin four-port device models a doubly center-tapped physical transformer with a magnetic ferrite core. Its model is based on XSPICE's magnetic core and inductive coupling models. For this device you need to specify physical parameters like cross sectional area, core length and number of primary and secondary turns. The physical model of the magnetic device is defined by two vectors: magnetic field intensity H in A/m and magnetic flux density B (also known as magnetic induction) in Tesla. The default array values are:

H_array = [-250 -100 -50 -37.5 -25 -12.5 0 12.5 25 37.5 50 100 250]

B_array = [-0.375 -0.36 -0.32 -0.29 -0.24 -0.15 0 0.15 0.24 0.29 0.32 0.36 0.375]

To change the value of H/B arrays, open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|n_prim||number of full-winding primary inductor coupling turns||-||100||required
|-
|n_sec||number of full-winding secondary inductor coupling turns||-||100||required
|-
|area||cross-sectional area||m2||1e-5||
|-
|length||core length||m||0.01||
|-
|}

== DPDT Switch ==

[[File:GK74.png]]

This is an 8-pin device that models a double-pole double-throw switch. It has two input signals and four output pins. When the control voltage is at the high state, the first and second input voltages are transferred to the first and third output pins, respectively. When the control voltage is at the low state, the first and second input voltages are transferred to the second and fourth output pins, respectively.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|von||turn-on voltage||V||3.3||
|-
|voff||turn-off voltage||V||0.3||
|-
|vt||threshold voltage||V||1.0||
|-
|ron||on resistance||Ohms||1.0||
|-
|roff||off resistance||Ohms||1Gig||
|-
|}

== DPST Switch ==

[[File:GK73.png]]

This is a 6-pin device that models a double-pole single-throw switch. It has two input signals and two output signals. When the switch on, the first and second input voltages are transferred to the first and second output pins, respectively. When the switch is off, the output pin do not receive any input signals.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|von||turn-on voltage||V||3.3||
|-
|voff||turn-off voltage||V||0.3||
|-
|vt||threshold voltage||V||1.0||
|-
|ron||on resistance||Ohms||1.0||
|-
|roff||off resistance||Ohms||1Gig||
|-
|}

==Ferrite Core Transformer==

[[File:GK95.png]]

This four-pin two-port device models a physical transformer with a magnetic ferrite core. Its model is based on XSPICE's magnetic core and inductive coupling models. For this device you need to specify physical parameters like cross sectional area, core length and number of primary and secondary turns. The physical model of the magnetic device is defined by two vectors: magnetic field intensity H in A/m and magnetic flux density B (also known as magnetic induction) in Tesla. The default array values are:

H_array = [-250 -100 -50 -37.5 -25 -12.5 0 12.5 25 37.5 50 100 250]

B_array = [-0.375 -0.36 -0.32 -0.29 -0.24 -0.15 0 0.15 0.24 0.29 0.32 0.36 0.375]

To change the value of H/B arrays, open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|n_prim||number of primary turns||-||100||required
|-
|n_sec||number of secondary turns||-||100||required
|-
|area||cross-sectional area||m2||1e-5||
|-
|length||core length||m||0.01||
|-
|}

== FM Modulated Source ==

[[File:GL24.png]]

This is a voltage source with a single-tone frequency modulated waveform. The FM modulation index MDI is defined as the ratio of maximum frequency deviation to maximum signal amplitude.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|V0||offset||V||0||
|-
|VA||amplitude||V||1||
|-
|FC||carrier frequency ||Hz||1||required
|-
|MDI||modulation index||-||0||required
|-
|FS||signal frequency ||Hz||1||required
|-
|}

==Frequency Meter==
[[File:G114.png]]

The Frequency Meter is a four-pin shunt device that is connected in parallel with an AC source just like a voltmeter and measures the operating frequency of the AC circuit. The input pins are connected across the AC source. The voltage across the output pins is equal to the frequency of the source in Hertz within a scale factor SF. Note that the Frequency Meter is designed to work with a single-tone AC source of unit amplitude. If the amplitude of the source is not one, multiply the SF parameter by the non-unit source amplitude value. The output voltage of the Frequency Meter can be used in conjunction with linear or nonlinear dependent sources to model frequency-dependent quantities.

Model Identifier: fmeter

Parameters:

The only parameter is the scale factor SF with a default value of 1.0. Set SF = 1e-6 to read out the frequency in MHz. Set SF = 1e-9 to read out the frequency in GHz. Set SF = 6.283185 (2*pi) to read out the angular frequency ω in radian/s.

== Fuse ==

[[File:GK76.png]]

This is a 2-pin interactive current-controlled switch. If the current passing through the fuse is less than a specified threshold current, the switch is closed. If the current exceeds the threshold level, the fuse breaks and remains open thereafter. The device's symbol changes to display its state.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|r||resistance when intact||Ohms||1.0||
|-
|i_thresh||threshold current||A||1.0||
|-
|}

==Ground==

[[File:G15.png]]

Ground has a voltage of zero (0) and is used as a reference to compute electrical values in the circuit.
All circuits must be grounded to be properly simulated. There is no limit on the number of grounds
you may use in a circuit. All components connected to ground are referenced to a common point and treated
as linked through ground.

==Hysteresis Block (XSPICE)==

[[File:G37.png]]

The Hysteresis block is a simple buffer stage that provides hysteresis of the output with respect to the
input. The in_low and in_high parameter values. The output values are limited to out_lower_limit and
out_upper_limit. The value of \93hyst\94 is added to the in_low and in_high points in order to specify the
points at which the slope of the hysteresis function would normally change abruptly as the input transitions
from a low to a high value. Likewise, the value of \93hyst\94 is subtracted from the in_high and in_low values
in order to specify the points at which the slope of the hysteresis function would normally change abruptly
as the input transitions from a high to a low value. In fact, the slope of the hysteresis function is
never allowed to change abruptly but is smoothly varied whenever the input_dowmain smoothing parameter
is set greater than zero.

Model Identifier: hyst

Netlist Format:

A<device_name> <in_pin> <out_pin> <model_name>

.model <model_name> hyst {<param1 = value> < param2 = value> ...}

Example:

A1 1 2 hysteresis_block

.model hysteresis_block hyst in_low = 0.0 in_high = 1.0

Parameters:

{| class="wikitable"
|-
!Name!!Description!!Default
|-
|In_low||input low value||0.0
|-
|in_high||input high value||1.0
|-
|hyst||hysteresis||0.1
|-
|out_lower_limit||output lower limit||0.0
|-
|out_upper_limit||output upper limit||1.0
|-
|input_domain||input smoothing domain||0.01
|-
|fraction||smoothing fraction/absolute value switch||true
|-
|}

==Ideal Center-Tapped Transformer with Push-Pull Input==

[[File:XFMR4.png]]

The ideal center-tapped transformer with push-pull input is a five-pin three-port device with two primary input ports and one secondary output port. Its model is based on the [[Glossary_of_Generic_Analog_Devices#Ideal_Transformer | Ideal Transformer]], and the relationship between its primary and secondary voltages is given by:

<math> \frac{v_P1}{v_S} = \frac{v_P2}{v_S} = n </math>

where vS is the secondary voltage, vP1 is measured between the top primary pin P1 and the center tap pin, and vP2 is measured between the center tap pin and the bottom primary pin P2. The red dots show the polarity of the windings on each side. This model has one parameter: ratio = n = NP1/NS = NP2/NS, which represents the primary-to-secondary (half-winding) turns ratio.

==Ideal Center-Tapped Transformer with Push-Pull Output==

[[File:XFMR3.png]]

The ideal center-tapped transformer with push-pull output is a five-pin three-port device with one primary input port and two secondary output ports. Its model is based on the [[Glossary_of_Generic_Analog_Devices#Ideal_Transformer | Ideal Transformer]], and the relationship between its primary and secondary voltages is given by:

<math> \frac{v_P}{v_{S1}} = \frac{v_P}{v_{S2}} = n </math>

where vP is the primary voltage, vS1 is measured between the top secondary pin S1 and the center tap pin, and vS2 is measured between the center tap pin and the bottom secondary pin S2. The red dots show the polarity of the windings on each side. This model has one parameter: ratio = n = NP/NS1 = NP/NS2, which represents the primary-to-secondary (half-winding) turns ratio.

==Ideal Diode==

[[File:GK106.png]]

This 2-pin device is a very basic and primitive model of a diode as a rectifier or switch. When the voltage across the device's terminals is positive, it acts as a short circuit. When the voltage across the device's terminals is negative, it acts as an open circuit.

Parameters:

None

==Ideal Operational Amplifier (Op-Amp)==

[[File:GK105.png]]

This is a very basic and primitive model of an operational amplifier. It has only one parameter, open loop gain with a default value of 50,000, which is adequate for most cases. The ideal Op-Amp device doesn't require any DC bias voltages.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|A||open loop gain||-||50,000||
|-
|}

==Ideal Transformer==

[[File:XFMR1.png]]

The ideal transformer is a four-pin two-port device with the following relationship between the voltages and currents at its primary and secondary ports:

<math> \frac{v_P}{v_S} = - \frac{i_S}{i_P} = \frac{N_P}{N_S} = n </math>

where vP, iP, NP are the primary voltage, current and number of turns, respectively, and vS, iS, NS are the secondary voltage, current and number of turns, respectively. The red dots show the polarity of the windings on each side. This model has one parameter: ratio = n = NP/NS, which represents the primary-to-secondary turns ratio. Note that the ideal transformer model is defined based on controlled sources and does not involve any magnetic physical parameters as opposed to mutual inductors or ferrite core transformer.

==Inductance Meter==

[[File:G37.png]]

The Inductance Meter measures the total inductance between a circuit node and the ground. The input pin of the device is connected to the measurement node. The output voltage of the device is then a scaled value equal to the total inductance seen on its input multiplied by the gain parameter. This model is primarily intended as a building block for other models which must sense an inductance value and alter their behavior based upon it. Care must be exercised when connecting an Inductance Meter to the inductors of a circuit. This is due to the fact that inductors are treated by SPICE as current sources. This can cause a problem when an inductor is connected in series with a current source, or in series with a voltmeter, or in series with another inductor.

Model Identifier: lmeter

Netlist Format:

A<device_name> <in_pin> <out_pin> <model_name>

.model <model_name> imeter {<gain = value>}

Example:

A1 1 2 inductance_meter

.model inductance_meter lmeter gain = 1

Parameters:

The only parameter is the gain with a default value of 1.0.

==Inductive Coupler Block==

[[File:GK99.png]]

The Inductive Coupler Block couples any two existing inductors. This block doesn't have any pins because it doesn't actually represent inductors, only the coupling between them. This is useful if you want to
couple two inductors that are in different parts of the circuit, or if you want to couple more than two inductors together. In the latter case, use more than one of these, with each one coupling a pair of inductors.

The standard parameters are Inductor1, Inductor2, and k. Inductor1 is the name of first inductor, Inductor2 is the name of the second inductor, and k is the coefficient of coupling, 0 < k ≤ 1.

==Inductive Coupling (XSPICE)==

[[File:G41.png]]

This function is a conceptual model which is used as a building block to create a wide variety of inductive and magnetic circuit models. This function is normally used in
conjunction with the “core” model, but it can also be used with resistors, hysteresis blocks, etc. to build up systems which mock the behavior of linear and nonlinear components.
The lcouple takes as an input (on the “l” port) a current. This current value is multiplied by the num_turns value, N, to produce an output value (a voltage value which appears on the
mmf_out port). The mmf_out acts similar to a magnetomotive force in a magnetic circuit;
when the lcouple is connected to the “core” model, or to some other resistive device, a current will flow. This current value (which is modulated by whatever the lcouple is
connected to) is then used by the lcouple to calculate a voltage “seen” at the “l” port. The voltage is a function of the derivative with respect to time of the current value seen at mmf_out.

The most common use for lcouple will be as a building block in the construction of transformer models. To create a transformer with a single input and a single output, you
would require two lcouple models plus one “core” model.

Example:

A1 (1 0) (2 3) lcouple1

.model lcouple1 lcouple ( num_turns = 10 )

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|num_turns||number of turns||-||1||required
|-
|}

==Inductor==

[[File:GK121.png]]

Inductors are used to store magnetic energy. An inductor's ability to counteract current changes passing through it is called its inductance (L), which is
measured in Henrys. In a (steady-state) DC analysis, the inductor acts like a short circuit. It is indeed treated as a current source, which can be problematic if an inductor is connected in series with a current source, or in series with a voltmeter, or in series with another inductor. The resistor may be of negligible value or one that accounts for the coil resistance of the inductor. In AC and transient analyses, the inductor develops a voltage across it in response to the changing magnetic
flux within its coil.

An inductor's transient behavior is described by the equation:

v(t) = L*(di(t)/dt)

The inductor's initial condition is optional. It is the initial value of the inductor current in Amperes that flows from node N+ through the inductor to node N-. The only time that the initial current matters is when the simulator performs a transient analysis, and the "Use Initial Conditions" checkbox is checked.

An inductor's AC behavior is described by the equation:

v = j ω * L * i

All inductor names must begin with L.

Netlist Format:

L<device_name> <N+> <N-> <value>

Example:

L1 1 2 10u

==Inductor with Ferrite Core==

[[File:GK94.png]]

This 2-pin device models a physical inductor with a magnetic ferrite core. Its model is based on XSPICE's magnetic core and inductive coupling models. Unlike the standard inductor device, you do not specify an inductance value for the inductor with ferrite core. Rather, you specify physical parameters like cross sectional area, core length and number of turns. The physical model of the magnetic device is defined by two vectors: magnetic field intensity H in A/m and magnetic flux density B (also known as magnetic induction) in Tesla. The default array values are:

H_array = [-250 -100 -50 -37.5 -25 -12.5 0 12.5 25 37.5 50 100 250]

B_array = [-0.375 -0.36 -0.32 -0.29 -0.24 -0.15 0 0.15 0.24 0.29 0.32 0.36 0.375]

To change the value of H/B arrays, open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|n_turns||number of turns||-||100||required
|-
|area||cross-sectional area||m2||1e-5||
|-
|length||core length||m||0.01||
|-
|}

== Insulated Gate Bipolar Transistor (IGBT)==

[[File:GK111.png]]

This is a 3-pin parameterized Insulated Gate Bipolar Transistor (IGBT) device with three pins: Collector(C), Gate (G), and Emitter (E). It is primarily used as a fast electronic switch. The IGBT combines the simple gate-drive characteristics of MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors. The device's model consists of an isolated gate FET for the control input, and a PNP bipolar power transistor as a switch. To further modify the internal device models, open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|cap||parasitic capacitance||F||1n||
|-
|rg||gate resistance||Ohms||5||
|-
|re||emitter resistance||Ohms||0.05||
|-
|bf||pnp transistor forward beta||-||1||
|-
|vto||MOSFET threshold voltage||V||5||
|-
|kt||MOSFET transconductance||-||2.99||
|-
|cgso||MOSFET voltage gate-source overlap capacitance||F||5u||
|-
|nd||diode emission coefficient||-||50||
|-
|cjo||diode junction capacitance||F||1n||
|-
|}

==Interactive Switch==

[[File:GK75.png]]

This device is an interactive switch that can be closed or opened either directly from the Schematic Editor by clicking on its symbol or from the Instrument Panel.

==JK Flip-Flop==

[[File:G53.png]]

The digital JK-type flip-flop is a one-bit, edge-triggered storage element which stores data whenever the clock (CLK) input line transitions from 0 (low) to 1 (high). If J = 1 and K = 0, then the output is set (i.e. Q = 1) on the rising edge of the clock. If J = 0 and K = 1, then the output is reset (i.e. Q = 0). If J = K = 0, then the outputs do not change. If J = K = 1, then the outputs toggle on the positive edge of the clock signal. In addition, there are asynchronous set and reset signals, which are independent of the clock. The combination SET = 1 and RESET = 0, causes Q = 1. The combination SET = 0 and RESET = 1 causes Q = 0.

Truth Table:

<table>
<tr>
<td>
{| class="wikitable"
|-
! CLK !! J !! K !! Q !! Notes
|-
|[[File:NonRising.png]] || X || X || Qprev || Hold State
|-
|[[File:Rising.png]] || 0 || 0 || Qprev || Hold State
|-
|[[File:Rising.png]] || 0 || 1 || 0 || Reset
|-
|[[File:Rising.png]] || 1 || 0 || 1 || Set
|-
|[[File:Rising.png]] || 1 || 1 || NOT(Qprev) || Toggle
|-
|}
</td>
</tr>
</table>

==Junction Field Effect Transistor (JFET)==

[[File:G12.png]]

The JFET is the simplest transistor device and has three pins: gate, drain and source. The JFET defaults are based on the Shichman and Hodges FET model. This is a square-law device because of the expression relating the drain current to the gate-to-source voltage:
Idrain=*(VGS-Vthreshold)2. In real JFETs, near the saturation point, the drain currents vary with the drain voltages. This can be modeled by the following formula: Idrain=*(VGS-VTO)2*(1+*VDS), which yields an increasing
drain current for increasing values of VDS.

The gate-to-source and gate-to-drain junctions each have a nonlinear capacitor. The zero-bias capacitance value is selected for each junction.

The standard device parameters are AREA, OFF, IC, and T. They are described below:

{| class="wikitable"
|-
|AREA||area factor (optional) (If not specified, the default value is 1.0.)
|-
|OFF||initial condition for the DC analysis (optional)
|-
|IC||initial condition (optional) (Used when a transient analysis is desired, which starts from other than the quiescent operating point.)
|-
|T||operating temperature of the device (optional)
|-
|}

The process model parameters are listed in the following table:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!EXAMPLE
|-
|VTO||threshold voltage||V||-2||-2
|-
|BETA||transconductance parameter||A/V2||1.0e-4||1.0e-3
|-
|LAMBDA||channel-length modulation parameter||1/V||0||1.0e-4
|-
|RD||drain ohmic resistance||ohms||0||100
|-
|RS||source ohmic resistance||ohms||0||100
|-
|CGS||zero-bias G-S junction capacitance||F||0||5pF
|-
|CGD||zero-bias G-D junction capacitance||F||0||1pF
|-
|PB||gate junction potential||V||1||0.6
|-
|IS||gate junction saturation current||A||1.0e-14||1.0e-14
|-
|B||doping tail parameter|| ||1||1.1
|-
|KF||flicker-noise coefficient|| ||0||
|-
|AF||flicker-noise exponent|| ||1||
|-
|FC||coefficient for forward-bias depletion capacitance formula|| ||0.5||
|-
|TNOM||parameter measurement temperature||deg. C||27||50
|-
|}

== Light Emitting Diode (LED) ==

[[File:GK114.png]]

This is a two-pin parameterized diode device that emits light of a certain wavelength when it is forward-biased.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|rs||ohmic resistance||Ohms||10||
|-
|vj||junction potential||V||0.6||
|-
|cjo||zero bias junction capacitance||F||10p||
|-
|tt||transit time||sec||0.1n||
|-
|}

==Linear Current-Controlled Current Source (CCCS)==

[[File:G2.png]]

The CCCS is a current source whose current is directly proportional to the current across a controlling Ammeter or a voltage source. There are two versions: two-terminal and four-terminal. For the two-terminal device, you must specify the name of the controlling Ammeter or voltage source, as well as the current gain, which has a default value of one. The four-terminal device already provides nodes for a controlling ammeter, and you just specify the current gain.

Model Identifier: cccs

Netlist Format:

F<device_name> <N+> <N-> <controlling_device_name> <value>

Example:

F1 1 0 V1 1.0

==Linear Current-Controlled Voltage Source (CCVS)==

[[File:G4.png]]

The CCVS is a voltage source whose voltage is directly proportional to the current through a controlling ammeter or a voltage source. There are two versions: two-terminal and four-terminal. For the two-terminal device, you must specify the name of the controlling Ammeter or voltage source, as well as the trans-resistance gain, which has a default value of one. The four-terminal device already provides nodes for a controlling ammeter, and you just specify the trans-resistance gain.

Model Identifier: ccvs

Netlist Format:

H<device_name> <N+> <N-> <controlling_device_name> <value>

Example:

H1 1 0 V1 1.0

==Linear Voltage-Controlled Current Source (VCCS)==

[[File:G3.png]]

The VCCS is a current source whose current is directly proportional to the voltage across a controlling voltmeter or the voltage between two circuit nodes. There are two versions: two-terminal and four-terminal. For the two-terminal device, you must specify the name of the controlling voltmeter or the two controlling nodes, as well as the trans-conductance gain, which has a default value of one. The four-terminal device already provides nodes for a controlling voltmeter, and you just specify the trans-conductance gain.

Model Identifier: vccs

Netlist Format:

G<device_name> <N+> <N-> <NC+> <NC-> <value>

Example:

G1 1 0 2 0 1.0

==Linear Voltage-Controlled Voltage Source (VCVS)==

[[File:G1.png]]

The VCVS is a voltage source whose voltage is directly proportional to the voltage across a controlling voltmeter of the voltage between two circuit nodes. There are two versions: two-terminal and four-terminal. For the two-terminal device, you must specify the name of the controlling voltmeter or the two controlling nodes, as well as the voltage gain, which has a default value of one. The four-terminal device already provides nodes for a controlling voltmeter, and you just specify the voltage gain.

Model Identifier: vcvs

Netlist Format:

E<device_name> <N+> <N-> <NC+> <NC-> <value>

Example:

E1 1 0 2 0 1.0

==Logic AND Gate==

[[File:G43.png]]

The AND gate performs the logical function Y = A & B. The AND function's output is one (high) if all of the inputs are one, and zero (low) otherwise.

<table>
<tr>
<td>
{| class="wikitable"
|-
! A !! B !! A .AND. B
|-
|0 || 0 || 0
|-
|0 || 1 || 0
|-
|1 || 0 || 0
|-
|1 || 1 || 1
|-
|}
</td>
</tr>
</table>

==Logic Inverter Gate==

[[File:G49.png]]

The Inverter performs the logical function Y = NOT(A). The Inverter function's output is one (high) if the input is zero (low), and vice versa.

<table>
<tr>
<td>
{| class="wikitable"
|-
! A !! .NOT. A
|-
|0 || 1
|-
|1 || 0
|-
|}
</td>
</tr>
</table>

==Logic NAND Gate==

[[File:G44.png]]

The NAND gate is just the inverse of the AND function: Y = NOT(A & B) = NOT(A) | NOT(B). The NAND function's output is zero (low) if all of the inputs are one (high), and one otherwise.

<table>
<tr>
<td>
{| class="wikitable"
|-
! A !! B !! A .NAND. B
|-
|0 || 0 || 1
|-
|0 || 1 || 1
|-
|1 || 0 || 1
|-
|1 || 1 || 0
|-
|}
</td>
</tr>
</table>

==Logic NOR Gate==

[[File:G46.png]]

The NOR gate is just the inverse of the OR function: Y = NOT(A | B) = NOT(A) & NOT(B). The NOR function's output is zero (low) if one or more of the inputs are one (high), and one otherwise.

<table>
<tr>
<td>
{| class="wikitable"
|-
! A !! B !! A .NOR. B
|-
|0 || 0 || 1
|-
|0 || 1 || 0
|-
|1 || 0 || 0
|-
|1 || 1 || 0
|-
|}
</td>
</tr>
</table>

==Logic OR Gate==

[[File:G45.png]]

The OR gate performs the logical function Y = A | B. The OR function's output is one (high) if one or more inputs are one, and zero (low) otherwise.

<table>
<tr>
<td>
{| class="wikitable"
|-
! A !! B !! A .OR. B
|-
|0 || 0 || 0
|-
|0 || 1 || 1
|-
|1 || 0 || 1
|-
|1 || 1 || 1
|-
|}
</td>
</tr>
</table>

==Logic XOR Gate==

[[File:G47.png]]

The XOR gate performs the logical Exclusive OR function Y = A &oplus; B. The XOR function's output is one (high) if one and only one input is one, and zero (low) otherwise.

<table>
<tr>
<td>
{| class="wikitable"
|-
! A !! B !! A .XOR. B
|-
|0 || 0 || 0
|-
|0 || 1 || 1
|-
|1 || 0 || 1
|-
|1 || 1 || 0
|-
|}
</td>
</tr>
</table>

==Logic XNOR Gate==

[[File:G48.png]]

The OR gate performs the logical function Y = NOT(A &oplus; B). The XNOR function's output is one (high) if and only if all of the inputs have the same state, and zero (low) otherwise.

<table>
<tr>
<td>
{| class="wikitable"
|-
! A !! B !! A .XNOR. B
|-
|0 || 0 || 1
|-
|0 || 1 || 0
|-
|1 || 0 || 0
|-
|1 || 1 || 1
|-
|}
</td>
</tr>
</table>

==Lossless Transmission Line==

[[File:G21.png]]

The lossless transmission line is a four-pin two-port device that models only one propagating mode of an ideal transmission line. When using this SPICE model, should all four nodes of the actual circuit be distinct, two modes may be activated, and this device would be insufficient for that purpose. To circumvent this potential problem, two transmission line devices would be required. Due to the implementation details, you may produce more accurate simulation results with a lossy transmission line device with zero loss.

Optional initial condition parameters are the voltage and current at each of the transmission line ports.

The standard device parameters are Z0, TD, F, NL, IC, described below:

{| class="wikitable"
|-
|Z0||characteristic impedance
|-
|TD||transmission delay
|-
|F||frequency
|-
|NL||normalized electrical length of the transmission line with respect to the wavelength in the line at frequency F. (If F is specified, but NL is not, the default is 0.25.)
|-
|IC||initial condition (Specifies the voltage and current at each of the transmission line ports.)
|-
|}

==Lossy Transmission Line==

[[File:G22.png]]

The lossy transmission line is a four-pin two-port convolution model for uniform constant-parameter distributed lines. MNAME is the process model name, which
includes a set of pre-specified options as described below.

The device model [[parameters]] are listed in the following table:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!EXAMPLE
|-
|R||resistance /length||Ohm /m||0.0||0.2
|-
|L||inductance/length||henrys/m||0.0||9.13e-9
|-
|C||capacitance/length||farads/m||0.0||3.65e-12
|-
|LEN||length of line||m||none||1.0
|-
|LININTERP||use linear interpolation||flag||not set||set
|-
|QUADINTERP||use quadratic interpolation||flag||not set||set
|-
|MIXEDINTERP||use linear when quadratic seems bad||flag||not set||set
|-
|COMPACTREL||special reltol for straight line checking||flag||RETOL||1.0e-3
|-
|COMPACTABS||special abstol for straight line checking||flag||ABSTOL||1.0e-9
|-
|NOCONTROL||don't do complex time control||flag||not set||set
|-
|STEPLIMIT||always limit timestep to 0.8*(delay of line)|| || ||
|-
|NOSTEPLIMIT||don't always limit timestep to 0.8*(delay of line)||flag||not set||set
|-
|TRUNCNR||use Newton-Raphson method for timestep calculation in LTRAtrunc||flag||not set||set
|-
|TRUNCDONTCUT||don't limit timestep to keep impulse-response errors low||flag||not set||set
|-
|}


The RLC (uniform transmission line with series loss only), RC (uniform RC line), LC (lossless transmission
line), and RG (distributed series resistance and parallel conductance only) lines have been implemented.
The length (LEN) must be given. COMPACTREL and COMPACTABS control the compaction of past history values
used in convolution. Larger values for these lower accuracy but improve speed. These are used with the
TRYTOCOMPACT option. 

==Magnetic Core (XSPICE)==

[[File:G42.png]]

This device is used as a building block to create a wide variety of inductive and magnetic circuit models. It is almost always to be used in conjunction with the "lcouple" model to build up systems which simulate the behavior of linear and nonlinear magnetic components. There are two fundamental modes of operation for the core model. These are the "PWL" mode (which is the default and most
likely to be of use to you) and the "Hysteresis" mode.

PWL Mode (mode = 1)

In the PWL mode, the model takes a voltage as input which it treats as a magnetomotive force (mmf) value. This value is divided by the total effective length of the core to produce a value for the Magnetic Field Intensity, H, which is then used to find the corresponding Flux Density, B, using the piecewise linear relationship described by you in the H_array / B_array coordinate pairs. B is then multiplied by the cross-sectional area of the core to find the Flux value, which is output as a current. The pertinent mathematical equations are:

H = mmf / L, where L = Length (in apmere-turns/meter)

B = f(H)

Φ = B * A, where A = Area

The B value is derived from a piecewise linear transfer function described to the model by the H_array and B_array coordinate pairs. This transfer function does not include hysteretic effects; for that, you would need to substitute a HYST model for the core. The magnetic flux value Φ in turn is used by the "lcouple"
code model to obtain a value for the voltage reflected back across its terminals to the driving electrical circuit.

Hysteresis Mode (mode = 2)

In the Hysteresis mode, the model takes a voltage as input which it treats as a magnetomotive force (mmf)
value. This value is used as input to the equivalent of a hysteresis code model block. The parameters
defining the input low and high values, the output low and high values, and the amount of hysteresis are
as in that model. The output from this mode, as in PWL mode, is a current value which is seen across the magnetic core port.

One final note to be made about the two core models is that certain parameters are specific to one or the other. In particular, the in_low, in_high, out_lower_limit, out_upper_limit, and hysteresis parameters are not available in PWL mode. Likewise, the H_array, B_array, area, ad length values are unavailable
in Hysteresis mode. The input_domain and fraction parameters are common to both modes (though their behavior is somewhat different; for explanation of the input_domain and fraction values for the Hysteresis mode, please refer to the Hysteresis Block discussion.

Model Identifier: core

Netlist Format:

A<device_name> <mc1 _pin> <mc2_pin> <model_name>

.model <model_name> core area = <value> length = <value> H_array = [<value1> <value2>] B_array = [<value1> <value2>]
{<param1 = value> < param2 = value> ...}

Example:

A1 1 2 core

.model core core area = 1 length = 1 H_array = [0 1] B_array = [0 1]

Parameters:

{| class="wikitable"
|-
!Name!!Description!!Default!!Notes
|-
|H_array||magnetic field array||[0 1]||required
|-
|B_array||flux density array||[0 1]||required
|-
|Area||cross-sectional area||1||required
|-
|Length||core length||1||required
|-
|Input_domain||input smoothing domain||0.01||
|-
|Fraction||smoothing fraction/abs switch||True||
|-
|Mode||mode switch (1=pwl, 2=hyst)||1||
|-
|In_low||input low value||0.0||
|-
|In_high||input high value||1.0||
|-
|Hyst||hysteresis||0.1||
|-
|Out_lower_limit||output lower limit||0.0||
|-
|Out_upper_limit||output upper limit||1.0||
|-
|}

==Marker==

[[File:G16.png]]

The marker serves several purposes:

* It can appear as a default plot in simulations if the "Voltage Probe" box is checked.

* It can be used to set the initial voltage or voltage guess at the node it is connected to.

* It can be used as a port for a subcircuit when you choose the checkbox labeled "Use as Subcircuit Port" is checked.

* It can be used to explicitly set a node number in place of the arbitrarily assigned node number by the program. In this case, make sure the "Set Node Index" box is checked. Otherwise, it will act as just a voltage probe.

* It can be used to connect different parts of a circuit in place of wires. To use markers as virtual connectors, place them at points where wires would otherwise connect. Then set the Part Title of the two (or more) markers to the same name, and they will act as a single circuit node.

==MESFET==

[[File:G14.png]]

The MESFET is a Schottky-barrier gate FET with six times greater electron mobility than silicon. MESFETs are important devices for creating high frequency circuits. They function by creating a potential barrier between the gate and the channel when the metal gate
contacts the gallium-arsenide substrate. Electron velocity saturates for fields approximately ten times lower than with silicon. The Curtice model includes linear and saturated operation.

The standard parameters are AREA, OFF, IC, and T. They are described below:

{| class="wikitable"
|-
|AREA||area factor (optional) (If not specified, the default value is 1.0.)
|-
|OFF||initial condition for the DC analysis (optional)
|-
|IC||initial condition (optional) (Used when a transient analysis is desired, which starts from other than the quiescent operating point.)
|-
|T||operating temperature of the device (optional)
|-
|}

All the MESFET process model parameters are described in the following table:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!EXAMPLE
|-
|VTO||pinch-off voltage||V||-2||-2
|-
|BETA||transconductance parameter||A/V2||1.0e-4||1.0e-3
|-
|B||doping tail extending parameter||1/V||0.3||0.3
|-
|ALPHA||saturation voltage parameter||1/V||2||2
|-
|LAMBDA||channel-length modulation parameter||1/V||0||1.0e-4
|-
|RD||drain ohmic resistance||Ohm||0||100
|-
|RS||source ohmic resistance||Ohm||0||100
|-
|CGS||zero-bias G-S junction capacitance||F||0||5pF
|-
|CGD||zero-bias G-D junction capacitance||F||0||1pF
|-
|PB||gate junction potential||V||1||0.6
|-
|KF||flicker noise coefficient||-||0||
|-
|AF||flicker noise exponent||-||1||
|-
|FC||coefficient for forward-bias depletion capacitance formula||-||0.5||
|-
|}

==MOSFET==

[[File:G13.png]]

The MOSFET is an active device that has up to 4 pins. The three standard pins are gate, drain, and source. These are given in the default symbol. The bulk node, which is grounded by default, is the fourth pin. The MOSFET with the bulk is named mos_n_lvl1_4 (the lvl1 is for level 1, the n for nmos, and the 4 for 4 pins.)

The standard [[parameters]] are L, W, AD, AS, PD, PS, NRD, NRS, OFF, IC, and T. They are described below:

{| class="wikitable"
|-
|L||channel length, in meters
|-
|W||channel width, in meters
|-
|AD,AS||areas of the drain and source diffusions, in meters2
|-
|PD,PS||perimeters of drain and source junctions, in meters(They default to 0.0.)
|-
|NRD,NRS||equivalent number of squares of the drain and source diffusions (These values multiply the sheet resistance for an accurate representation of parasitic series drain and source resistance of each transistor. The default value is 1.0.)
|-
|OFF||initial condition for the DC analysis (optional)
|-
|IC||initial condition (optional) (Used when a transient analysis is desired, which starts from other than the quiescent operating point.)
|-
|T||operating temperature of the device (optional)
|-
|}

There are five different default models: square-law I-V characteristic, analytical, semi-empirical, and BSIM and BSIM2 (Berkeley Short-channel IGFET Model), which include second-order effects such as channel-length
modulation, subthreshold conduction, scattering-limited velocity saturation, small-size effects, and charge-controlled capacitance. The process parameter LEVEL specifies which of the models is chosen as indicated below:

{| class="wikitable"
|-
|LEVEL 1||Schichman-Hodges
|-
|LEVEL 2||MOS2
|-
|LEVEL 3||MOS3
|-
|LEVEL 4||BSIM
|-
|LEVEL 5||BSIM2
|-
|LEVEL 6||MOS6
|-
|}

The process model [[parameters]] for levels 1,2,3, and 6 are listed in the following table:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!EXAMPLE
|-
|LEVEL||model index|| ||1||
|-
|VTO||zero-bias threshold voltage||V||0.0||1.0
|-
|KP||transconductance parameter||A/V2||2e-5||3.1e-5
|-
|GAMMA||bulk threshold parameter||V1/2||0.0||0.37
|-
|PHI||surface potential||V||0.6||0.65
|-
|LAMBDA||channel-length modulation (level 1 & 2 only)||1/V||0.0||0.02
|-
|RD||drain ohmic resistance||ohms||0.0||1.0
|-
|RS||source ohmic resistance||ohms||0.0||1.0
|-
|CBD||zero-bias B-D junction capacitance||F||0.0||20fF
|-
|CBS||zero-bias B-S junction capacitance||F||0.0||20fF
|-
|IS||bulk junction saturation current||A||1.0e-14||1.0e-15
|-
|PB||bulk junction potential||V||0.8||0.87
|-
|CGSO||gate-source overlap capacitance per meter channel width||F/m||0.0||4.0e-11
|-
|CGDO||gate-drain overlap capacitance per meter channel width||F/m||0.0||4.0e-11
|-
|CGBO||gate-bulk overlap capacitance per meter channel length||F/m||0.0||2e-10
|-
|RSH||drain & source diffusion sheet resistance||ohm/area||0.0||10.0
|-
|CJ||zero-bias bulk junction bottom capacitance per meter2 junction area||F/m2||0.0||2e-4
|-
|MJ||bulk junction bottom grading coefficient|| ||0.5||0.5
|-
|CJSW||zero-bias bulk junction sidewall capacitance per meter junction perimeter||F/m||0.0||1.0e-9
|-
|MJSW||bulk junction sidewall grading coefficient|| ||0.5, 0.33 (level1), (level2,3)||
|-
|JS||bulk junction saturation current per meter2 of junction area||A/m2|| ||1.0e-8
|-
|TOX||oxide thickness||meter||1.0e-7||1.0e-7
|-
|NSUB||substrate doping||1/cm3||0.0||4.0e15
|-
|NSS||surface state density||1/cm2||0.0||1.0e10
|-
|NFS||fast surface state density||1/cm2||0.0||1.0e10
|-
|TPG||type gate material(+1 if opp. substrate, 0 if A1 gate, -1 if same as substrate)|| ||1.0||
|-
|XJ||metallurgical junction depth||meter||0.0||1
|-
|LD||lateral diffusion||meter||0.0||0.8
|-
|UO||surface mobility||cm2/Vs||600||700
|-
|UCRIT||critical field for mobility degradation (level2 only)||V/cm||1.0e4||1.0e4
|-
|UEXP||critical field exponent in mobility degradation (level2 only)|| ||0.0||0.1
|-
|UTRA||transverse field coefficient (deleted for level2)|| ||0.0||0.3
|-
|VMAX||maximum drift velocity of carriers||m/s||0.0||5.0e4
|-
|NEFF||total channel-charge (fixed and mobile) coefficient (level2 only)|| ||1.0||5.0
|-
|KF||flicker noise coefficient|| ||0.0||1.0e-26
|-
|AF||flicker noise exponent|| ||1.0||1.2
|-
|FC||coefficient for forward bias depletion capacitance formula|| ||0.5||
|-
|DELTA||width effect on threshold voltage (level2,3)|| ||0.0||1.0
|-
|THETA||mobility modulation (level3 only)||1/V||0.0||0.1
|-
|ETA||static feedback (level3 only)|| ||0.0||1.0
|-
|KAPPA||saturation field factor (level3 only)|| ||0.2||0.5
|-
|TNOM||parameter measurement temperature||deg. C||27||50
|-
|}

The BSIM model has no default parameters, and leaving one out is considered an error. The additional process model parameters for level 4 and 5 models are listed in the following table:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS
|-
|VFB||flat-band voltage||V
|-
|PHI||surface inversion potential||V
|-
|K1||body effect coefficient||V1/2
|-
|K2||drain/source depletion charge-sharing coefficient||
|-
|ETA||zero-bias drain-induced barrier-lowering coefficient||
|-
|MUZ||zero-bias mobility||cm2/V-s
|-
|DL||shortening of channel||m
|-
|DW||narrowing of channel||m
|-
|U0||zero-bias transverse-field mobility degradation coefficient||V-1
|-
|U1||zero-bias velocity saturation coefficient||m/V
|-
|X2MZ||sens. of mobility to substrate bias at Vds=0||cm2/V2-s
|-
|X2E||sens. of drain-induced barrier lowering effect to substrate bias||V-1
|-
|X3E||sens. of drain-induced barrier lowering effect to drain bias at Vds= Vdd||V-1
|-
|X2U0||sens. of transverse field mobility degradation to substrate bias||V-2
|-
|X2U1||sens. of velocity saturation effect to substrate bias||mV-2
|-
|MUS||mobility at zero substrate bias and at Vds= Vdd||cm2/V2-s
|-
|X2MS||sens. of mobility to substrate bias at Vds= Vdd||cm2/V2-s
|-
|X3MS||sens. of mobility to drain bias at Vds= Vdd||cm2/V2-s
|-
|X3U1||sens. of velocity saturation effect on drain bias at Vds= Vdd||mV-2
|-
|TOX||gate oxide thickness||m
|-
|TEMP||temperature at which [[parameters]] were measured||deg. C
|-
|VDD||measurement bias range||V
|-
|CGDO||gate-drain overlap capacitance per meter channel width||F/m
|-
|CGSO||gate-source overlap capacitance per meter channel width||F/m
|-
|CGBO||gate-bulk overlap capacitance per meter channel length||F/m
|-
|XPART||gate-oxide capacitance-charge model flag||
|-
|N0||zero-bias subthreshold slope coefficient||
|-
|NB||sens. of subthreshold slope to substrate bias||
|-
|ND||sens. of subthreshold slope to drain bias||
|-
|RSH||drain and source diffusion sheet resistance||ohms/area
|-
|JS||source drain junction current density||A/m2
|-
|PB||built-in potential of source drain junction||V
|-
|MJ||grading coefficient of source drain junction||
|-
|PBSW||built-in potential of source drain junction sidewall||V
|-
|MJSW||grading coefficient of source drain junction sidewall||
|-
|CJ||source drain junction capacitance per unit area||F/ m2
|-
|CJSW||source drain junction sidewall capacitance per unit length||F/m
|-
|WDF||source drain junction default width||m
|-
|DELL||source drain junction length reduction||m
|-
|}

XPART=0 selects a 40/60 drain/source charge partition; XPART=1 selects a 0/100 partition.

==Mutual Inductors==

[[File:GK100.png]]

The mutual inductors device is a pair of inductors that are coupled to each other. L1 and L2 are the names of two inductors. You have to specify the inductance of inductor L1, the inductance of inductor L2, the initial current through each, and the coupling coefficient k, 0 ≤ k ≤ 1. The mutual inductance M expressed in units of H can be calculated using the following definition:

<math> k = \frac{M}{\sqrt{L_1 L_2}} </math>

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|inductance1||inductance of inductor 1||H||1||
|-
|inductance2||inductance of inductor 2||H||1||
|-
|ic1||initial current through inductor 1||A||0||
|-
|ic2||initial current through inductor 2||A||0||
|-
|k||coefficient of coupling||-||1.0||
|-
|}

==Non-Ideal Current Transformer==

[[File:GK104.png]]

This 8-pin device models a non-ideal lossy current transformer. Its model consists of an ideal transformer with more secondary turns than primary turns along with a number of parasitic elements. The interior pins with red wires give you direct access to the primary and secondary pins of the internal ideal transformer. on each side of the internal ideal transformer, there is a series leakage inductance LLk, followed by a shunt winding capacitance CWk and a series winding resistance RWk, which connects to the exterior positive pin on that side. The inter-winding resistance R12 is connected across the negative pins of the primary and secondary of the ideal transformer model. In a more complete model, an external inductor LM can be connected between the positive and negative interior pins of either the primary or secondary to account for the effects of the magnetization inductance.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|ratio||secondary-to-primary turns ratio||-||2||required
|-
|rw1||primary winding resistance||Ohms||0.1||
|-
|rw2||secondary winding resistance||Ohms||0.1||
|-
|ll1||primary leakage inductance||H||1m||
|-
|ll2||secondary leakage inductance||H||1m||
|-
|cw1||primary winding capacitance||F||1p||
|-
|cw2||secondary winding capacitance||F||1p||
|-
|r12||inter-winding resistance||Ohms||10Meg||
|-
|}

==Non-Ideal Diode==

[[File:G9.png]]

This 2-pin device is a basic simplified model of a diode as a rectifier or switch. When forward-biased, it acts as a low-valued voltage source. When reverse-biased, it acts as an open circuit until the reverse voltage exceeds the specified breakdown voltage. Then it acts as a high-valued voltage source of the reverse polarity.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|vf||forward drop voltage||V||0.5||required
|-
|vr||reverse breakdown voltage||V||100||required
|-
|}

==Non-Ideal Voltage Transformer==

[[File:GK103.png]]

This 8-pin device models a non-ideal lossy voltage transformer. Its model consists of an ideal transformer with more primary turns than secondary turns along with a number of parasitic elements. The interior pins with red wires give you direct access to the primary and secondary pins of the internal ideal transformer. There are series combinations of a winding resistance RWk and a leakage inductance LLk on the primary and secondary sides. These are connected between the positive interior and exterior pins on each side. There are also two shunt branches at the inputs of the primary and secondary sides (connected between the positive and negative exterior pins), each consisting of a distributed turn-to-turn winding resistance RDCk in series with a distributed turn-to-turn winding capacitance CWk. The inter-winding capacitance CWW12 is connected across the positive pins of the primary and secondary of the ideal transformer model. In a more complete model, an external inductor LM can be connected between the positive and negative interior pins of either the primary or secondary to account for the effects of the magnetization inductance.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|ratio||primary-to-secondary turns ratio||-||2||required
|-
|rw1||primary winding resistance||Ohms||0.1||
|-
|rw2||secondary winding resistance||Ohms||0.1||
|-
|ll1||primary winding leakage inductance||H||1m||
|-
|ll2||secondary winding leakage inductance||H||1m||
|-
|rdc1||primary distributed turn-to-turn winding resistance||Ohms||1u||
|-
|cw1||primary distributed turn-to-turn winding capacitance||F||1p||
|-
|rdc2||secondary distributed turn-to-turn winding resistance||Ohms||1u||
|-
|cw2||secondary distributed turn-to-turn winding capacitance||F||1p||
|-
|cww12||inter-winding capacitance||F||1p||
|-
|}

==Nonlinear Capacitor==

[[File:GK89.png]]

The nonlinear capacitor model allows the capacitor to be described by an arbitrary relationship between the capacitor's charge Q and the voltage V across the capacitor. In other words, Q = f(V). The nonlinear capacitance is then defined as C(V) = dQ/dV. You need to define the charge Q by a mathematical expression in the voltage V. You have to open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text. Enter any mathematical expression in the variable "v(pos,neg)" standing for the terminal voltage. The default expression is:

{ C_DEF } * v(pos,neg)

which implies a linear capacitor, where Q = CDEF V. Therefore, C = C(V) = dQ/dV = CDEF.

Another example is 1e-4*(v(pos,neg))^2.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|C_DEF||default capacitance||F||1||
|-
|}

==Nonlinear Conductor==

[[File:GK88.png]]

The nonlinear conductor model allows the conductor to be described by an arbitrary relationship between the conductor's current I and the voltage V across the conductor. In other words, I = f(V). The nonlinear conductance is then defined as G(V) = dI/dV. You need to define the current I by a mathematical expression in the voltage V. You have to open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text. Enter any mathematical expression in the variable "v(pos,neg)" standing for the terminal voltage. The default expression is:

{ G_DEF } * v(pos,neg)

which implies a linear conductor, where I = GDEF V. Therefore, G = G(V) = dI/dV = GDEF.

Another example is 1e-4*(v(pos,neg))^2.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|G_DEF||default capacitance||S||1||
|-
|}

==Nonlinear Dependent Sources==

[[File:G18.png]]

Nonlinear dependent (arbitrary) sources use an equation or mathematical expression to describe their behavior. One and only one of the two forms: V=<expr> or I=<expr> must be given.

Netlist Format:

B<device_name> v = <expression>

B<device_name> i = <expression>

Examples:

v = I(v1) + 3* I(v2)

I = v(i1) + 3* v(2) + 5 * v(3) ^2

The first example is a current-controlled voltage source. The v on the left side of the equation
indicates that it is a voltage source. I(v1) and I(v2) are the currents through voltage sources named v1 and v2, respectively.

The second example is a voltage-controlled current source. v(2) and v(3) represents the voltages at nodes 2 and 3, respectively, and v(i1) represents the voltage across a current source named i1.

The following mathematical functions defined for real variables can be used in the expressions:

abs(x), acos(x), acosh(x), asin(x), asinh(x), atan(x), atanh(x), cos(x), cosh(x), exp(x), ln(x), log(x), max(x,y), min(x,y), pwr(x,y), pwrs(x,y), sgn(x), sin(x), sinh(x), sqrt(x), tan(x), tanh(x), u(x), uramp(x).

The function "sgn" is the signum function and its value is 1 if the argument is positive or zero and -1 if the argument is negative.
The function "u(x)" is the unit step and "uramp(x)" is the integral of the unit step. The
unit step is one if its argument is greater than zero and zero if its argument is less than zero. The
ramp function (uramp) is 0 for argument values less than zero and equal to the argument for argument values
greater than zero.

The following operators are permissible: +, -, *, /, and ^.

The power functions have equivalent expressions: pwr(x,y) = x^y and pwrs(x,y) = sgn(x)*abs(x)^y.

Two constants can also be used in expressions: pi = 3.1415926 and e = 2.7182818.

There is a conditional function with the syntax IF(Condition, Expression1, Expression2). If "Condition" is met, then the return value of the function is Expression1; otherwise, it is Expression2. An example of this type of function is IF(v(1)>=0,1,-1), which is equivalent to sgn(v(1)).

To get time into an expression, integrate the current from a constant current source with a capacitor
and use the voltage across the capacitor.

Note: All the functions and expressions are case-insensitive.

==Nonlinear Inductor==

[[File:GK90.png]]

The nonlinear inductor model allows the inductor to be described by an arbitrary relationship between the inductor's magnetic flux Φ and the current I flowing through the inductor . In other words, Φ = f(I). The nonlinear inductance is then defined as L(I) = dΦ/dI. You need to define the flux Φ by a mathematical expression in the current I. You have to open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text. Enter any mathematical expression in the variable "i(vx)" standing for the device current. The default expression is:

{ L_DEF } * i(vx)

which implies a linear inductor, where Φ = LDEF I. Therefore, L = L(I) = dΦ/dI = LDEF.

Another example is 1e-4*(i(vx))^2.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|L_DEF||default inductance||H||1||
|-
|}

==Nonlinear Resistor==

[[File:GK87.png]]

The nonlinear resistor model allows the resistor to be described by an arbitrary relationship between the voltage V across the resistor and its current I. In other words, V = f(I). The nonlinear resistance is then defined as R(I) = dV/dI. You need to define the voltage V by a mathematical expression in the current I. You have to open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text. Enter any mathematical expression in the variable "i(vx)" standing for the device current. The default expression is:

{ R_DEF } * i(vx)

which implies a linear resistor, where V = RDEF I. Therefore, R = R(I) = dV/dI = RDEF.

Another example is 10*(i(vx))^2.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|R_DEF||default resistance||Ω||1||
|-
|}

==Operational Amplifier (Op-Amp)==

[[File:GK105.png]]

This three-pin device models a parameterized operational amplifier with a very high voltage gain, a very high input impedance and a very low output impedance. The behavioral model of the parameterized Op-Amp device is based on the algorithm found in the book Macromodeling with Spice,
authored by Connelly & Choi, published by Prentice Hall. The default parameters are those of the 741 Op-Amp. This device doesn't require external DC bias voltage sources. Its positive and negative DC bias voltages are specified as its parameters. Sometimes the simulation doesn't converge if there is no DC path from the output of the Op-Amp to the ground.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|r_in_dm||differential mode input resistance||Ohms||2Meg||
|-
|r_in_cm||common mode input resistance||Ohms||2G||
|-
|Avd0||differential mode DC gain||dB||106||
|-
|CMRR||common mode rejection ratio||dB||90||
|-
|r_out||output resistance||Ohms||75||
|-
|c_in||input capacitance||F||1.4p||
|-
|ios||input offset current||A||20n||
|-
|ib||input bias current||A||80n||
|-
|vio||input offset voltage||V||1m||
|-
|slew_pos||positive slew rate||V/s||0.5e6||
|-
|slew_neg||negative slew rate||V/s||0.5e6||
|-
|curr_src_max||maximum output source current||A||25m||
|-
|curr_sink_||maximum output sink current||A25m||
|-
|fp1||dominant pole frequency||Hz||5||
|-
|fp2||second pole frequency||Hz||2Meg||
|-
|fp3||third pole frequency||Hz||20Meg||
|-
|fp4||fourth pole frequency||Hz||100Meg||
|-
|fz||first zero frequency||Hz||5Meg||
|-
|vcc_pos||positive dc voltage source||V||12||
|-
|vcc_neg||negative dc voltage source||V||12||
|-
|}

== Optocoupler ==

[[File:GK115.png]]

This is a five-pin parameterized optocoupler device. Its model consists of an ideal diode device in series with an Ohmic resistance connected between the Anode (A) and Cathode (K) pins together with a bipolar junction transistor device with three accessible pins, Collector (C), Base (B) and Emitter (E). A current-controlled current source is connected between base and collector of the BJT, whose current is controlled by the current passing through the diode. The proportionality constant is twice the specified value of the current transfer ratio (ctr) parameter.

You can change or enhance the models of the diode and BJT by adding more parameters. To do so, you have to open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|ctr||current transfer ratio||-||0.5||
|-
|rd||diode ohmic resistance||Ohms||0.1||
|-
|}

== Overtone Crystal ==

[[File:GK79.png]]

This is a 2-pin parameterized overtone crystal device.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|LM||fundamental motional inductance||H||250m||
|-
|CM1||fundamental motional capacitance||F||10f||
|-
|RM1||fundamental motional resistance||Ohms||20||
|-
|RM3||3rd overtone motional resistance||Ohms||50||
|-
|RM5||5th overtone motional resistance||Ohms||100||
|-
|RM7||7th overtone motional resistance||Ohms||150||
|-
|C0||shunt capacitance||F||3p||
|-
|}

== Photodiode ==

[[File:GK113.png]]

This is a 4-pin parameterized photodiode device. A pair of pins, Anode (A) and Cathode (K), represent the physical terminals of the photodiode. The photodiode model connected between the anode and cathode pins consists of the parallel connection of an ideal diode, a dark current source, a noise current source, a current-controlled current source, a diode capacitance, a shunt resistance altogether with a series resistance.

Another pair of pins IS+ and IS- act as an ammeter that must be inserted in a control circuit. The current passing through this ammeter controls the current of the photodiode. The default proportionality constant is unity. The controlling current is typically a function of light intensity incident on the surface of the photodiode.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|id||dark current||A||1n||
|-
|ir||noise current||A||1p||
|-
|cd||diode capacitance||F||10p||
|-
|rs||series resistance||Ohms||1m||
|-
|rp||parallel resistance||Ohms||1Meg||
|-
|}

==Piecewise Linear (PWL) Controlled Source==

[[File:GL49.png]]

The Piecewise Linear (PWL) Controlled Source is a single-input and single-output function generator whose output is not necessarily
linear for all input values. Instead, it follows an I/O relationship that is specified by the x_array and y_array coordinates. The x_array and y_array values represent vectors of coordinate points on the x and y axes, respectively. The x_array values are progressively increasing input coordinate points, and the associated y_array values represent the outputs at those points. There may be as few as two pairs specified, or as many as memory and simulation speed allow.

In order to fully specify outputs for values of Vin outside of the bounds of the PWL function, the PWL
controlled source model extends the slope found between the lowest two coordinate pairs and the highest
two coordinate pairs. This has the effect of making the transfer function completely linear for Vin
less than x_array[0] and Vin greater than x_array[n]. It also has the potentially subtle effect of unrealistically
causing an output to reach a very large or small value for large inputs. You should thus keep in mind
that the PWL Source does not inherently provide a limiting capability.

In order to diminish the potential for divergence of simulations when using the PWL block, a form
of smoothing around the x_array and y_array coordinate points is necessary. This is due to the iterative
nature of the simulator and its reliance on smooth first derivatives of transfer functions in order to
arrive at a matrix solution. Consequently, the two parameters "input_domain" and "fraction" are included
to allow you some control over the amount and nature o the smoothing performed.

Fraction is a switch that is either TRUE or FALSE. When TRUE (the default setting), the simulator assumes
that the specified input_domain value is to be interpreted as a fractional figure. Otherwise, it is interpreted
as an absolute value. Thus, if fraction = TRUE and input_domain = 0.10, the simulator assumes that the smoothing
radius about each coordinate point is to be set equal to 10% of the length of either the x_array segment
above each coordinate point, or the x_array segment below each coordinate point. The specific segment
length chosen will be the smallest of these two for each coordinate point.

If fraction = FALSE and input_domain = 0.10, then the simulator will begin smoothing the transfer function at 0.10
volts (or amperes) below each x_array coordinate and will continue the smoothing process for another 0.10
volts (or amperes) above each x_array coordinate point.

Model Identifier: pwl

Netlist Format:

A<device_name> %vd(<in_pin> <in_ref_pin>) %vd(<out_pin> <out_ref_pin>) <model_name>

.model <model_name> pwl x_array = [<value1> <value2> ...] y_array = [<value1>
<value2> ...] {<param1 = value> < param2 = value> ...}

Example:

A1 %vd(2 3) %vd(1 4) pwl
.model pwl pwl x_array = [0 1] y_array = [0 1]

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|x_array||x-element array||V||[0 1]||required
|-
|y_array||y-element array||V||[0 1]||required
|-
|input_domain||input smoothing domain||-||0.01||
|-
|fraction||smoothing %/abs switch||-||True||
|-
|}

== PM Modulated Source ==

[[File:GL25.png]]

This is a voltage source with a single-tone phase modulated waveform. The PM modulation index MDI is defined as the ratio of maximum phase deviation to maximum signal amplitude.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|V0||offset||V||0||
|-
|VA||amplitude||V||1||
|-
|FC||carrier frequency ||Hz||1||required
|-
|MDI||modulation index||-||0||required
|-
|FS||signal frequency ||Hz||1||required
|-
|}

== Potentiometer ==

[[File:GK77.png]]

This is a 3-pin device that models a potentiometer with options for either linear or logarithmic resistance. position = 0 corresponds to the wiper being at the extreme left and position = 1 corresponds to the wiper being at the extreme right. With the default position = 0.5 corresponding to the midpoint, this device functions as a one-half voltage divider.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|position||position of wiper connection||-||0.5||Must be between 0.0 and 1.0.
|-
|log||log-linear switch||-||False||Select False for linear and True for logarithmic.
|-
|r||total resistance||Ohms||0.1u||
|-
|log_multiplier||multiplier constant for log resistance||-||1.0||
|-
|}

== Programmable Unijunction Transistor (PUT)==

[[File:GK112.png]]

This is a 3-pin parameterized Programmable Unijunction Transistor (PUT) device with three pins: Base 1 (B1), Base 2 (B2) and Emitter (E). It is biased with a positive voltage between the two bases. This device has a unique characteristic that when it is triggered, its emitter current increases regeneratively until it is restricted by emitter power supply. It exhibits a negative resistance characteristic and so it can be employed as an oscillator. The device's model involves an NPN BJT and a PNP BJT. The forward beta parameters of the two transistors are set equal to 100 and 1, respectively. To change these values, open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|eta||-||-||0.6||
|-
|rbb||total base-to-base resistance||Ohms||40k||
|-
|rf||forward resistance||Ohms||1Meg||
|-
|rr||reverse resistance||Ohms||1Meg||
|-
|rgk||gate-to-cathode resistance||Ohms||100||
|-
|bvf||breakdown voltage of forward diode||V||100||
|-
|bvr||breakdown voltage of reverse diode||V||100||
|-
|bvgk||breakdown voltage of gate-to-cathode diode||V||5||
|-
|}

== Pseudo-Random Bit Sequence Generator==

[[File:GK39.png]]

This device outputs a random binary bit at each clock cycle.

Parameters:

None

==Random Resistor==

[[File:GK93.png]]

The random resistor device models a resistor whose resistance is a random number between 0 and a maximum specified value.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|max_val||maximum resistance value||Ω||1k||
|-
|}

==Real Capacitor==

[[File:GK117.png]]

This is primarily a non-ideal, temperature-dependent capacitor model. You can access it from the Parts Menu as '''User-Defined Capacitor'''. It has two temperature coefficients: first-order TC1 temperature and second-order TC2. The value of the temperature-dependent capacitance is computed using the quadratic equation:

C(T) = C(T0) * [ 1 + TC1 * (T - T0) + TC2 * (T-T0)^2 ]

The device's model includes a series resistance and a series inductance together with the capacitor, all in parallel with a shunt resistance.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|Resr||series resistance||Ω||10||
|-
|Ls||inductance||H||1p||
|-
|C||capacitance||F||1n||
|-
|Rp||parallel resistance||Ω||1G||
|-
|ic||voltage initial condition||V||0||
|-
|temp||operating temperature||deg C||27||
|-
|tc1||first-order temperature coefficient||F/°C||0.1||
|-
|tc2||second-order temperature coefficient||F/°C2||0.01||
|-
|}

==Real Inductor==

[[File:GK118.png]]

This is primarily a non-ideal inductor model. You can access it from the Parts Menu as '''User-Defined Inductor'''. Its series resistor has two temperature coefficients: first-order TC1 temperature and second-order TC2. The value of the temperature-dependent resistance is computed using the quadratic equation:

R(T) = R(T0) * [ 1 + TC1 * (T - T0) + TC2 * (T-T0)^2 ]

The device's model includes a series resistance together with the inductor, and the combination in parallel with a shunt capacitance.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|Rdc||series resistance||Ω||10||
|-
|L||inductance||H||1||
|-
|Cp||capacitance||F||1p||
|-
|ic||current initial condition||A||0||
|-
|temp||operating temperature||deg C||27||
|-
|tc1||first-order temperature coefficient||Ω/°C||0.1||
|-
|tc2||second-order temperature coefficient||Ω/°C2||0.01||
|-
|}

==Real Resistor==

[[File:GK116.png]]

This is primarily a non-ideal, temperature-dependent resistor model. You can access it from the Parts Menu as '''User-Defined Resistor'''. It has two temperature coefficients: first-order TC1 temperature and second-order TC2. The value of the temperature-dependent resistance is computed using the quadratic equation:

R(T) = R(T0) * [ 1 + TC1 * (T - T0) + TC2 * (T-T0)^2 ]

The device's model includes a series inductance together with the resistor.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|R||resistance||Ω||1k||
|-
|Ls||inductance||H||1n||
|-
|temp||operating temperature||deg C||27||
|-
|tc1||first-order temperature coefficient||Ω/°C||0.1||
|-
|tc2||second-order temperature coefficient||Ω/°C2||0.01||
|-
|}

==Resistor==

[[File:GK119.png]]

Resistors are passive devices that dissipate power. Their resistance value varies depending on how much power they can dissipate and is measured
in Ohms. The transient, DC and AC behaviors of a resistor are all described by the same equation:

v = R * i

where v is the voltage across the resistor, i is the current passing through the resistor, and R is the resistance. The value of R must be nonzero.

All resistor names must begin with R.

Netlist Format:

R<device_name> <N+> <N-> <value>

Example:

R1 1 2 1k

[[RF.Spice A/D]] provides three types of resistor: Simple, User-Defined (Real Resistor) and Semiconductor. The resistance of the simple resistor is a single value expressed in Ohms. You can also set the Monte Carlo tolerance for this resistor.

==Schottky Diode==

[[File:GK80.png]]

The Schottky diode has the same model as the generic diode with a nonzero transit time (tt), a nonzero junction capacitance (cjo) and a typically larger saturation current (is), a lower junction potential (vj) and a smaller grading coefficient (m).

==Semiconducting Capacitor==

[[File:GK83.png]]

This is the more general form of the Capacitor model and allows for the calculation of the actual capacitance value from strictly geometric information and the specifications of the process.

General Form:

CXXXXXXX N1 N2 <VALUE> <MNAME> <L=LENGTH> <W=WIDTH> <IC=VAL>

If VALUE is specified, it defines the capacitance. If MNAME is specified, then the capacitance is calculated from the process information in the model MNAME and the given LENGTH and WIDTH. If VALUE is not specified, then MNAME and LENGTH must be specified. If WIDTH is not specified, then it is taken from the default width given in the model. Either VALUE or MNAME, LENGTH, and WIDTH may be specified, but not both sets. The optional initial condition "IC" is the initial voltage across the capacitor for transient simulations.

The capacitance is computed as:

CAP = CJ * (LENGTH - NARROW) * (WIDTH - NARROW)+ 2 * CJSW * (LENGTH + WIDTH - 2NARROW) * CAP

To modify the model parameters, first double click on the capacitor to edit its top-level model parameters. Then choose the button labeled {{key|Edit from Table}} in the process model section. This will open a window in which you can edit CJ, CJSW, NARROW, DEFW, and CAP.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|CJ||junction bottom capacitance||F/m2||-||
|-
|CJSW||junction sidewall capacitance||F/m ||-||
|-
|DEFW||default device width||m||1u||
|-
|NARROW||narrowing due to side etching||m||0||
|-
|CAP||nominal capacitance for Monte Carlo simulation||F||1||
|-
|}

== Semiconductor Resistor ==

[[File:GK82.png]]

This is the more general form of the resistor model and allows for the modeling of temperature effects and for the calculation of the actual resistance value from strictly geometric information and the specifications of the process.

General Form:

RXXXXXXX N1 N2 <VALUE> <MNAME> <L=LENGTH> <W=WIDTH> <TEMP=T>

If VALUE is specified, it overrides the geometric information and defines the resistance. If MNAME is specified, then the resistance may be calculated from the process information in the model MNAME and the given LENGTH and WIDTH. If VALUE is not specified, then MNAME and LENGTH must be specified. If WIDTH is not specified, then it is taken from the default width given in the model. The (optional) TEMP value is the temperature at which this device is to operate, and overrides the temperature specification in the SPICE Options Dialog.

The resistance is computed as:

R(T0) = (RSH) * [(L - NARROW) / (W - NARROW)] * RES

R(T) = R(T0) * [ 1 + TC1 * (T - T0) + TC2 * (T-T0)^2 ]

To modify the model parameters, first double click on the resistor to edit its top-level model parameters. Then choose the button labeled {{key|Edit from Table}} in the process model section. This will open a window in which you can edit TC1, TC2, RSH, RES, etc.

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|TC1||first order temperature coefficient||Ω/°C||-||
|-
|TC2||second order temperature coefficient||Ω/°C2||-||
|-
|RSH||sheet resistance||Ω/sq||-||
|-
|DEFW||default device width||m||1u||
|-
|NARROW||narrowing due to side etching||m||0||
|-
|TNOM||the parameter measurement temperature||deg C ||27||
|-
|RES||resistance multiplier for Monte Carlo simulation||Ohms||1||
|-
|}

== Silicon-Controlled Rectifier (SCR)==

[[File:GK109.png]]

This is a 3-pin parameterized Silicon-Controlled Rectifier (SCR) device with three pins: Anode (A), Cathode (K) and Gate (G). It is a unidirectional device which can conduct current only in one direction. The SCR can be triggered only by a positive current going into its gate. The device's model involves an NPN BJT and a PNP BJT. The forward beta parameters of the two transistors are set equal to 100 and 1, respectively. To changes these values, open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|rf||forward resistance||Ohms||1Meg||
|-
|rr||reverse resistance||Ohms||1Meg||
|-
|rgk||gate-to-cathode resistance||Ohms||100||
|-
|bvf||breakdown voltage of forward diode||V||100||
|-
|bvr||breakdown voltage of reverse diode||V||100||
|-
|bvgk||breakdown voltage of gate-to-cathode diode||V||5||
|-
|}

== SPDT Switch ==

[[File:GK72.png]]

This is a 5-pin device that models a single-pole double-throw switch. The input voltage is transferred to the first output pin if the control voltage is at a high state. Otherwise, its is transferred to the second output pin.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|von||turn-on voltage||V||3.3||
|-
|voff||turn-off voltage||V||0.3||
|-
|vt||threshold voltage||V||1.0||
|-
|ron||on resistance||Ohms||1.0||
|-
|roff||off resistance||Ohms||1Gig||
|-
|}

== SPST Switch ==

[[File:GK71.png]]

This is a 4-pin device that models a single-pole single-throw switch. It is virtually equivalent of the standard voltage-controlled switch.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|von||turn-on voltage||V||3.3||
|-
|voff||turn-off voltage||V||0.3||
|-
|vt||threshold voltage||V||1.0||
|-
|ron||on resistance||Ohms||1.0||
|-
|roff||off resistance||Ohms||1Gig||
|-
|}

==SR Flip-Flop==

[[File:G59.png]]

The digital SR-type flip-flop is a one-bit, edge-triggered storage element which stores data whenever the clock (CLK) input line transitions from 0 (low) to 1 (high). The value stored on the output Q line will depend on the S and R input line values. If S = 1 and R = 0, the output is set (i.e. Q = 1) on the rising edge of the clock. If S = 0 and R = 1, the output is reset (i.e. Q = 0) on the rising edge of the clock. If both inputs are S = R = 0, then the outputs do not change from the previous state. If both inputs are S = R = 1, then the result is unknown. In addition, there are asynchronous set and reset signals, which are independent of the clock input. The combination SET = 1 and RESET = 0, causes Q = 1. The combination SET = 0 and RESET = 1 causes Q = 0.

Truth Table:

<table>
<tr>
<td>
{| class="wikitable"
|-
! CLK !! S !! R !! Q !! Notes
|-
|[[File:NonRising.png]] || X || X || Qprev || Hold State
|-
|[[File:Rising.png]] || 0 || 0 || Qprev || Hold State
|-
|[[File:Rising.png]] || 0 || 1 || 0 || Reset
|-
|[[File:Rising.png]] || 1 || 0 || 1 || Set
|-
|[[File:Rising.png]] || 1 || 1 || X || Illegal
|-
|}
</td>
</tr>
</table>

==SR Latch==

[[File:G58.png]]

The digital SR-type latch is a one-bit, level-sensitive storage element which outputs the value dictated by the state of the S and R input lines whenever the enable (EN) input line is 1 (high). This value is stored (i.e., held on the output line) whenever the enable (EN) line is 0 (low). If S = 1 and R = 0, the latch is set (i.e. Q = 1). If S = 0 and R = 1, the latch is reset (i.e. Q = 0). If both inputs are S = R = 0, then the outputs do not change from the previous state. If both inputs are S = R = 1, then the result is unknown. In addition, there are set and reset signals, which are independent of the enable line. The combination SET = 1 and RESET = 0, causes Q = 1. The combination SET = 0 and RESET = 1 causes Q = 0.

Truth Table:

<table>
<tr>
<td>
{| class="wikitable"
|-
! EN !! S !! R !! Q !! Notes
|-
|0 || X || X || Qprev || Hold State
|-
|1 || 0 || 0 || Qprev || Hold State
|-
|1 || 0 || 1 || 0 || Reset
|-
|1 || 1 || 0 || 1 || Set
|-
|1 || 1 || 1 || X || Illegal
|-
|}
</td>
</tr>
</table>

==Tabulated Conductor==

[[File:GK92.png]]

The tabulated conductor model allows the conductance to be described by a table relating the device's current i(t) to its terminal voltage v(t). In effect, the conductance is defined as G = di(t)/dv(t). The model provides two interpolation options: cubic spline and piecewise linear. You can enter the (v,i) data pairs in the text box provided in the property dialog. Or you can import the data from a text file.

==Tabulated Resistor==

[[File:GK91.png]]

The tabulated resistor model allows the resistance to be described by a table relating the device's terminal voltage v(t) to its current i(t). In effect, the resistance is defined as R = dv(t)/di(t). The model provides two interpolation options: cubic spline and piecewise linear. You can enter the (i,v) data pairs in the text box provided in the property dialog. Or you can import the data from a text file.

==Tapped Inductor==

[[File:GK101.png]]

This 3-pin device models a tapped inductor with mutual coupling effect.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|Lt||total inductance||H||1m||
|-
|ratio||ratio of number of turns between positive terminal and tap to total number of turns||-||0.5||
|-
|k||coefficient of coupling||-||1.0||
|-
|}

== Temperature-Dependent Current Source ==

[[File:GL14.png]]

This is a current source whose current is an arbitrary function of the circuit temperature. You have to open the subcircuit model dialog by clicking the {{key|Edit Model...}} button and edit its text. Enter any mathematical expression in the variable "v(T)" standing for temperature. Note that the circuit temperature is set and controlled by the parameter "temp" in the Miscellaneous tab of the SPICE [[Simulation Options]] dialog.

Examples:

* v(T) is equivalent to f(T) = T.
* 1 + 0.1*(v(t))^2 is equivalent to f(T) = 1 + 0.1T.

Parameters:

None

== Temperature-Dependent Voltage Source ==

[[File:GL13.png]]

This is a voltage source whose voltage is an arbitrary function of the circuit temperature. You have to open the subcircuit model dialog by clicking the {{key|Edit Model...}} button and edit its text. Enter any mathematical expression in the variable "v(T)" standing for temperature. Note that the circuit temperature is set and controlled by the parameter "temp" in the Miscellaneous tab of the SPICE [[Simulation Options]] dialog.

Examples:

* v(T) is equivalent to f(T) = T.
* 1 + 0.1*(v(t))^2 is equivalent to f(T) = 1 + 0.1T.

Parameters:

None

==Thermometer==
[[File:G115.png]]

The Thermometer is a two-pin device that measures the operating temperature of a circuit. The voltage across the device pins is equal to SPICE's operating temperature in degrees centigrade. The output voltage of the Thermometer can be used in conjunction with linear or nonlinear dependent sources to model temperature-dependent quantities.

Model Identifier: thermo

Parameters:

This device has no parameters.

==Toggle Flip-Flop==

[[File:G55.png]]

The digital T-type flip-flop is a one-bit, edge-triggered storage element which toggles its current state whenever the clock (CLK) input line transitions from 0 (low) to 1 (high). When the toggle (T) line is zero, the flip-flop is inactive. When T is high, the flip-flop's output toggles its value on the rising edge of the clock. In addition, there are asynchronous set and reset signals, which are independent of the clock input. The combination SET = 1 and RESET = 0, causes Q = 1. The combination SET = 0 and RESET = 1 causes Q = 0.

Truth Table:

<table>
<tr>
<td>
{| class="wikitable"
|-
! T !! CLK !! Q !! Notes
|-
|0 || X || Qprev || Hold State
|-
|1 || [[File:NonRising.png]] || Qprev || Hold State
|-
|1 || [[File:Rising.png]] || NOT(Qprev) || Toggle
|-
|}
</td>
</tr>
</table>

== Triac Thyristor ==

[[File:GK110.png]]

This is a 3-pin bidirectional thyristor device that conducts current in either direction when triggered. A thyristor is analogous to a relay in that a small voltage and current can control a much larger voltage and current. The triac has two anode pins termed Main Terminal 1 (MT1) and Main Terminal 2 (MT2) and a Gate (G) pin. In order to create a triggering current for a triac, either a positive or negative voltage can be applied to the gate. Once triggered, the thyristor continues to conduct, even if the gate current ceases, until the main current drops below a certain level called the holding current. The device's model involves two NPN BJT transistors and two PNP BJT transistors. The forward beta parameters of the NPN and PNP transistors are set equal to 20 and 5, respectively. To changes these values, open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|rf||forward resistance||Ohms||1Meg||
|-
|bvf||breakdown voltage of forward diodes||V||100||
|-
|rh||resistance controlling reverse holding current||Ohms||100||
|-
|rgp||resistance controlling forward holding current and trigger current||Ohms||50||
|-
|}

==Uniform RC Transmission Line==

[[File:G23.png]]

The standard parameters are L, and N. They are described below:

Two of the nodes are the element nodes connected by the RC line. The third is the node to which the capacitances
are connected. L is the length of the RC line in meters. N is the number of lumped segments to use in
modeling the RC line.

This device is derived from a model proposed by Gertzberrg. It expands the URC line into a network of
lumped RC segments with internally generated nodes. These segments increase toward the middle of the
URC line in a geometric progression with K as the proportionality constant.

The URC line is made up entirely of resistor and capacitor segments, unless the ISPERL parameter has a
non-zero value. In this case, capacitors are replaced by reverse biased diodes with an equivalent zero-bias
junction capacitance, a saturation current of ISPERL amps per meter of transmission line, and optional
series resistance of RSPERL ohms per meter.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!EXAMPLE
|-
|K||propagation constant||-||2||1.2
|-
|FMAX||maximum frequency of interest||Hz||1.0G||6.5Meg
|-
|RPERL||resistance per unit length||Ohm /m||1000||10
|-
|CPERL||capacitance per unit length||F/m||1.0e-15||1pF
|-
|ISPERL||saturation current per unit length||A/m||0||-
|-
|RSPERL||diode resistance per unit length||Ohm/m||0||-
|-
|}

==Varactor Diode==

[[File:GK81.png]]

A varactor diode is a combination of the generic diode with additional package inductance, package capacitance and a series resistance. This diode device has a typically large value of junction capacitance (cjo).

Parameters (in addition to standard diode parameters):

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|q||quality factor||-||5000||
|-
|f0||frequency of Q-factor specification||Hz||50Meg||
|-
|ls||package inductance||H||0.5n||
|-
|cp||package capacitance ||F||0.05p||
|-
|}

==Voltage-Controlled Capacitor==

[[File:GK85.png]]

This 3-pin device models a voltage-controlled two-terminal capacitor whose capacitance is linearly proportional to a control voltage that is applied to a third (CTRL) pin. The proportionality constant is a conversion factor which you need to specify in F/V.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|K_C||conversion factor||F/V||1.0||
|-
|}

==Voltage-Controlled Inductor==

[[File:GK86.png]]

This 3-pin device models a voltage-controlled two-terminal inductor whose inductance is linearly proportional to a control voltage that is applied to a third (CTRL) pin. The proportionality constant is a conversion factor which you need to specify in H/V.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|K_L||conversion factor||H/V||1.0||
|-
|}

==Voltage-Controlled Resistor==

[[File:GK84.png]]

This 3-pin device models a voltage-controlled two-terminal resistor whose resistance is linearly proportional to a control voltage that is applied to a third (CTRL) pin. The proportionality constant is a conversion factor which you need to specify in Ω/V.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|K_r||conversion factor||Ω/V||1.0||
|-
|}

==Voltage-Controlled Switch==

[[File:G19.png]]

Switches are devices that exhibit high resistance when open (OFF state) and low resistance when closed (ON state). The switch model allows an almost ideal switch to be specified. With careful selection of the on and off resistances, they can effectively represent zero and infinite resistances in comparison to other circuit elements, while sustaining the model condition of a positive, finite value.

There are two versions of Voltage-Controlled Switch: two-terminal and four-terminal. For the two-terminal device, you must specify the name of the controlling Voltmeter or controlling voltage nodes, as well as the turn-on and turn-off voltages in Volts and on and off resistance values in Ohms. The four-terminal device already provides nodes for a controlling voltmeter, and you just specify the rest of [[parameters]]. When the voltage across the switch or controlling device is greater or equal to the turn-on current, the switch closes. When the voltage across the switch or controlling device is less than or equal to the turn off current, the switch opens.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|V_ON||turn-on voltage||V||0.5||
|-
|V_OFF||turn-off voltage||V||0.0||
|-
|RON||on resistance||Ohms||1.0||
|-
|ROFF||off resistance||Ohms||1G||
|-
|}

==Voltage Noise Source==

[[File:GL15.png]]

This is a voltage noise generator characterized by a spectral density and corner frequency. You have to click the {{key|Edit Model...}} button to access the parameters of this device.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|En||noise voltage||V/√Hz||1n||required
|-
|freq||noise corner frequency||Hz||100||required
|-
|}

==Voltage Source==

[[File:G17A.png]]

A voltage source has a DC value, a transient behavior, an AC behavior, and distortion parameters. The transient type, AC parameters, and distortion parameters are defined on the first tab of the source's property dialog. The transient expression can be a pulse, sinusoid, exponential, or piecewise linear. The DC value of a voltage source is its initial transient value. For a source with a sinusoidal transient behavior, for example, the DC value will be equal to its transient offset voltage. The AC parameters are magnitude and phase. These are used during the AC Frequency Sweep analysis. The distortion parameters, two sets of magnitude and phase, are used during the distortion analysis. The AC and distortion parameters are defined on the second tab of the source's property dialog.

==XSpice Devices and their models==

XSpice devices have the following form:

A<device_name> <node1> <node2> ... <model_name>


e.g., A2 1 2 transfer_function

Note that XSpice devices must start with the "A" designation, much as a resistor starts with
an "R". Some devices will have grouped (or vector) pins and are designated by being placed
inside square brackets. In the example shown below, the 1 and 2 pins are grouped. Pin 3 is not. 


A1 [1 2] 3 summer 

Some models will have voltage differential pairs of pins and will be denoted by a %vd( ). In the following
example pins 1 and 4 are differential pairs, as well as pins 2 and 3. Differential pairs must go between
parentheses ().


A1 %vd(1 4) %vd(2 3) triangle 

Refer to individual devices for more information.

Each XSpice device will also have a model associated with it. Each model will have the following form:


.model <model_name> <model_identifier> {<pname1 = pval1>} {<pname2 = pval2>}
...


e.g., .model transfer_function s_xfer in_offset = 0.0 gain = 1.0

Model_name refers to the name given in the device line. Model_identifier is an internal designation and
must be of an existing designation Refer to each device's example for the correct designation.

Parameter values are optional. If they aren't specified, then the default will be used. Some devices
have parameters that require a value and must be specified. Refer to individual devices for any required parameters.

==Zener Diode==

[[File:G10.png]]

The Zener Diode models the DC characteristics of most zeners. Since most data sheets for zener diodes do
not give detailed characteristics in the forward region, only a single point defines the forward characteristicThe
saturation current refers to the relatively constant reverse current that is produced when the voltage
across the zener is negative, but breakdown has not been reached. The reverse leakage current determines
the slight increase in reverse current as the voltage across the zener becomes more negative. It is modeled
as a resistance parallel to the zener with value v_breakdown / i_rev.

Note that the limt_switch parameter engages an internal limiting function for the zener. This can, in
some cases, prevent the simulator from converging to an unrealistic solution if the voltage across or
current into the device is excessive. If use of this feature fails to yield acceptable results, the convlimit
option should be tried (add the following statement to the SPICE input deck: .options convlimit)

Model Identifier: zener

Netlist Format:

A<device_name> <z_pin> <z_out_pin> <model_name>

.model <model_name> zener v_breakdown = 1 {<param1 = value> < param2 = value> ...}

Example:

A1 1 2 zener

.model zener zener v_breakdown = 1

Parameters:

{| class="wikitable"
|-
!Name!!Description!!Default!!Notes
|-
|v_breakdown||breakdown voltage||1||required
|-
|i_breakdown||breakdown current||2.0e-2||
|-
|i_sat||saturation current||1.0e-12||
|-
|N_forward||forward emission coefficient||1.0||
|-
|limit_switch||switch for on-board limiting (convergence aid)||False||
|-
|}

 
[[Image:Back_icon.png|40px]] '''[[RF.Spice_A/D | Back to RF.Spice A/D Wiki Gateway]]'''

RF.Spice A/D Glossary

2024-10-07T15:05:20Z

Asabet:

==4-Bit ADC Bridge==

[[File:GK44.png]]

This 8-pin device is simply a bundle of 4 1-bit ADC bridges. Each analog input pin has a corresponding digital output pin.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|in_low||maximum 0-valued analog input||V||0.1||required
|-
|in_high||minimum 1-valued analog input||V||0.9||required
|-
|}

==4-Bit DAC Bridge==

[[File:GK45.png]]

This 8-pin device is simply a bundle of 4 1-bit DAC bridges. Each digital input pin has a corresponding analog output pin.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|out_low||analog output for 0 digital input||V||0||required
|-
|out_high||analog output for 1 digital input||V||1||required
|-
|}

== AC/RF Current Source ==

[[File:GL11.png]]

This is a simplified version of the standard Current Source, in which the AC "Use" box has been checked by default. Therefore, it is ready to be used for AC frequency sweep. Note that for AC frequency sweep, you do not need to specify the frequency.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|VA||peak current amplitude||A||1||required
|-
|Freq||frequency ||Hz||1||required
|-
|Phase||phase||deg||0||
|-
|offset||DC offset for small-signal current||A||0||
|-
|}

== AC/RF Voltage Source ==

[[File:GL10.png]]

This is a simplified version of the standard Voltage Source, in which the AC "Use" box has been checked by default. Therefore, it is ready to be used for AC frequency sweep. Note that for AC frequency sweep, you do not need to specify the frequency.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|VA||peak voltage amplitude||V||1||required
|-
|Freq||frequency ||Hz||1||required
|-
|Phase||phase||deg||0||
|-
|offset||DC offset for small-signal voltage||V||0||
|-
|}

==Alternate Ferrite Core Transformer==

[[File:GK96.png]]

The alternate ferrite core transformer is a four-pin two-port device, which has the same behavior as the [[Glossary of Generic Analog & Mixed-Mode Devices#Ferrite_Core_Transformer | Ferrite Core Transformer]], except for the reversed polarity of its secondary port.

==Alternate Ideal Transformer==

[[File:XFMR2.png]]

The alternate ideal transformer is a four-pin two-port device, which has the same behavior as the [[Glossary of Generic Analog & Mixed-Mode Devices#Ideal_Transformer | Ideal Transformer]], except for the reversed polarity of its secondary port.

== AM Modulated Source ==

[[File:GL23.png]]

This is a voltage source with a single-tone amplitude modulated waveform. The AM modulation index MDI is defined as the ratio of maximum amplitude deviation to maximum signal amplitude.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|V0||offset||V||0||
|-
|VA||amplitude||V||1||
|-
|FC||carrier frequency ||Hz||1||required
|-
|MDI||modulation index||-||0||required
|-
|FS||signal frequency ||Hz||1||required
|-
|}

== Analog Clock ==

[[File:GL30.png]]

This is a periodic pulse generator with a default 0V low output level and a default 5V high output level.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|delay||delay time||sec||0||
|-
|rise||rise time||sec||0.1n||
|-
|fall||fall time||sec||0.1n||
|-
|pulse_wid||clock pulse width||sec||1u||required
|-
|period||clock period||-||2u||required
|-
|out_low||low output voltage level||V||0||
|-|-
|out_high||high output voltage level||V||5||
|-
|}

==Analog-to-Digital Converter (ADC) Bridge==
[[File:GK42.png]]

The ADC Bridge takes an analog value from an analog node and may be in the form of a voltage or current.
If the input is less than or equal to "in_low", then a digital "0" is generated. If
the input is greater than or equal to "in_high", a digital "1" is generated. Otherwise,
a digital "UNKNOWN" is the output value. Unlike the DAC Bridge, ramping or delay is not applicable.
Rather, the continuous ramping of the input provides for any associated delays in the digitized signal.

This model also posts an input load value based on the parameter input_load.

Model Identifier: adc_bridge

Netlist Format:

A<device_name> [<in_pin> {<in2_pin>> ...}] [<out_pin> {<out2_pin> ...}] <model_name>

.model <model_name> adc_bridge {<param1 = value> < param2 = value> ...}

Example:

A [1] [2] adc_bridge

.model adc_bridge adc_bridge in_low = .1 fall_delay = 1n

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|in_low||maximum 0-valued analog input||V||0.1||required
|-
|in_high||minimum 1-valued analog input||V||0.9||required
|-
|rise_delay||L-to-H delay time||sec||1n||
|-
|fall_delay||H-to-L delay time||sec||1n||
|-
|}

== Arbitrary Temporal Waveform Generator ==

[[File:GL17.png]]

This is a voltage source with an arbitrary waveform defined by a mathematical expression. You have to open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text. Enter any mathematical expression in the variable "v(t)" standing for time.

Examples:

* v(t) is equivalent to f(t) = t.
* 0.1*(v(t))^2 is equivalent to f(t) = 0.1t^2.
* sin(2*pi*v(t)) is equivalent to f(t) = sin(2πt).

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|Tmax||maximum signal duration||sec||1e6||required
|-
|}

==Auto-Transformer==

[[File:GK102.png]]

This 3-pin device models an auto-transformer with mutual coupling effect.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|Lp||primary inductance||H||1m||
|-
|Ls||secondary inductance||H||1m||
|-
|k||coefficient of coupling||-||1.0||
|-
|}

==Bipolar Junction Transistor (BJT)==
[[File:G11.png]]

The BJT is an active device which has up to 4 pins. The three standard pins are base, emitter, and collector. These are given in the default symbol. The substrate, which is grounded by default, is the fourth pin. To use the BJT with the substrate, create a new 4-pin BJT using the Device Editor and Symbol Editor.

The standard device parameters are AREA, OFF, IC, and T. They are described below:

{| class="wikitable"
|-
|AREA||area factor (optional) (If not specified, the default value is 1.0.)
|-
|OFF||initial condition for the DC analysis (optional)
|-
|IC||initial condition (optional) (Used when a transient analysis is desired, which starts from other than the quiescent operating point.)
|-
|T||operating temperature of the device (optional)
|-
|}

Area factor scales the model parameters RE and RC. IC VBE is the initial voltage from base emitter. IC VCE is the initial voltage from collector to emitter. TEMP is the overriding temperature. These parameters are based on the Gummel and Poon integral-charge model. If these parameters are not specified, then it will reduce to the simpler Ebers-Moll model.

The process model is mandatory for the BJT. Descriptions of the process model parameters are given in the following table:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!EXAMPLE
|-
|IS||transport saturation current||A||1.0e-16||1.0e-15
|-
|BF||ideal maximum forward beta|| ||100||100
|-
|NF||forward current emission coefficient|| ||1.0||1
|-
|VAF||forward Early voltage||V||infinite||200
|-
|IKF||corner forward beta high current roll-off||A||infinite||0.01
|-
|ISE||B-E leakage saturation current||A||0||1.0e-13
|-
|NE||B-E leakage emission coefficient|| ||1.5||2
|-
|BR||ideal maximum reverse beta|| ||1||0.1
|-
|NR||reverse current emission coefficient|| ||1||1
|-
|VAR||reverse Early voltage||V||infinite||200
|-
|IKR||corner reverse beta high current roll-off||A||infinite||0.01
|-
|ISC||B-C leakage saturation current||A||0||1.0e-13
|-
|NC||B-C leakage emission coefficient|| ||2||1.5
|-
|RB||zero bias base resistance||ohms||0||100
|-
|IRB||current where base resistance falls halfway to minimum value||A||infinite||0.1
|-
|RBM||minimum base resistance at high currents||ohms||RB||10
|-
|RE||emitter resistance||ohms||0||1
|-
|RC||collector resistance||ohms||0||10
|-
|CJE||B-E zero bias depletion capacitance||F||0||2pF
|-
|VJE||B-E built-in potential||V||0.75||0.6
|-
|MJE||B-E junction exponential factor|| ||0.33||0.33
|-
|TF||ideal forward transit time||sec||0||0.1ns
|-
|XTF||coefficient for bias dependence of TF|| ||0||
|-
|VTF||voltage describing VBC dependence of TF||V||infinite||
|-
|ITF||high-current parameter for effect on TF||A||0||
|-
|PTF||excess phase at freq=1.0/(TF*2PI)Hz||degree||0||
|-
|CJC||B-C zero bias depletion capacitance||F||0||2pF
|-
|VJC||B-C built-in potential||V||0.75||0.5
|-
|MJC||B-C junction exponential factor|| ||0.33||0.5
|-
|XCJC||fraction of B-C depletion capacitance connected to internal base node|| ||1||
|-
|TR||ideal reverse transit time||sec||0||10ns
|-
|CJS||zero bias collector-substrate capacitance||F||0||2pF
|-
|VJS||substrate junction built-in potential||V||0.75||
|-
|MJS||substrate junction exponential factor|| ||0||0.5
|-
|XTB||forward and reverse beta temp. exponent|| ||0||
|-
|EG||energy gap for temperature effect on IS||eV||1.11||
|-
|XTI||temperature exponent for effect on IS|| ||3||
|-
|KF||flicker-noise coefficient|| ||0||
|-
|AF||flicker-noise exponent|| ||1||
|-
|FC||coefficient for forward bias depletion capacitance formula|| ||0.5||
|-
|TNOM||parameter measurement temperature||deg. C||27||50
|-
|}

==Capacitance Meter==
[[File:G37.png]]

The Capacitance Meter measures the total capacitance between a circuit node and the ground. The input pin of the device is connected to the measurement node. The output voltage of the device is then a scaled value equal to the total capacitance seen on its input multiplied by the gain parameter. This model is primarily intended as a building block for other models which must sense a capacitance value and alter their behavior based upon it.

Model Identifier: cmeter

Netlist Format:

A<device_name> <in_pin> <out_pin> <model_name>

.model <model_name> cmeter {<gain = value>}

Example:

A1 1 2 cap_meter

.model cap_meter cmeter gain = 1

Parameters:

The only parameter is the gain with a default value of 1.0.

==Capacitor==
[[File:GK120.png]]

Capacitors are used to store electrical energy. They can filter or remove AC signals or block DC current without disrupting AC signals. A capacitor's ability to store energy is termed capacitance and is measured in Farads, with values from pF to mF. The only time current flows through a capacitor is when the charge is collected on, or is removed from, its parallel plates. This means that the voltage across the capacitor is changing, which doesn't conform to DC analysis. In a physical circuit, there is a transition stage during which capacitors charge up to their final values. The result is the same as if these capacitors did not exist and the connections to them were left dangling. In other words, in a (steady-state) DC analysis, a capacitor behaves like an open circuit. Therefore, it is important that no section of the circuit is isolated from the capacitors. Every circuit node needs some path for DC current to the ground.

A capacitor's transient behavior is described by the equation:

i(t) = C * (dv(t)/dt)

Its initial voltage is only important when the simulator performs a transient analysis, and the "Use Initial Conditions" checkbox is checked.

An capacitor's AC behavior is described by the equation:

i = j ω * C * v

All capacitor names must begin with C.

Netlist Format:

C<device_name> <N+> <N-> <value>

Example:

C1 1 2 10p

[[RF.Spice A/D]] provides three types of capacitors: simple, user-defined (or real) and semiconductor. The standard capacitor parameters are N+, N-, VALUE, and IC. In a simple capacitor, VALUE must
be specified for the capacitance in Farads. IC is the (optional) initial condition for the capacitor voltage.

==Center-Tapped Ferrite Core Transformer==

[[File:GK97.png]]

This five-pin three-port device models a center-tapped physical transformer with a magnetic ferrite core. Its model is based on XSPICE's magnetic core and inductive coupling models. For this device you need to specify physical parameters like cross sectional area, core length and number of primary and secondary turns. The physical model of the magnetic device is defined by two vectors: magnetic field intensity H in A/m and magnetic flux density B (also known as magnetic induction) in Tesla. The default array values are:

H_array = [-250 -100 -50 -37.5 -25 -12.5 0 12.5 25 37.5 50 100 250]

B_array = [-0.375 -0.36 -0.32 -0.29 -0.24 -0.15 0 0.15 0.24 0.29 0.32 0.36 0.375]

To change the value of H/B arrays, open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|n_prim||number of primary inductor coupling turns||-||100||required
|-
|n_sec||number of full-winding secondary inductor coupling turns||-||100||required
|-
|area||cross-sectional area||m2||1e-5||
|-
|length||core length||m||0.01||
|-
|}

==Controlled Sine Wave Oscillator==

[[File:G24.png]]

This is a four-terminal function generator with a sinusoidal wave output, whose frequency is controlled by an input voltage. The functional dependency of the output frequency on the input voltage is piecewise linear and is defined as a two-dimensional table similar to a piecewise linear (PWL) controlled source. In the "frequency vs. voltage" curve, the array "cntl_array" defines voltage values in Volts and the array "freq_array" defines the corresponding frequencies in Hz.
This function has parameterizable values of low and high peak output voltage.

Model Identifier: sine

Netlist Form:

A<device_name> %vd(<cntl_in_pin> <cntl_in_ref_pin>) %vd(<out_pin>
<out_ref_pin>) <model_name>

.model <model_name> sine cntl_array = [<value1> <value2>]
freq_array = [<value1> <value2>] {<param1 = value> < param2 = value> ...}

Example:

A1 %vd(1 3) %vd(2 4) sine

.model sine sine cntl_array = [0 1] freq_array = [1 1000]

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|Cntl_array||control array||V||[0 1]||required
|-
|Freq_array||frequency array||Hz||[1 1000]||required
|-
|Out_low||output peak low value||V||-1.0||
|-
|Out_high||output peak high value||V||1.0||
|-
|}

==Controlled Sources==

Circuits can contain linear dependent sources characterized by one of the following equations (where g,
e, f, and h are constants representing transconductance, voltage gain, current gain, and transresistance,
respectively):

iout = g vin
     vout = e vin
     iout = f iin
     vout = h iin

For further information, refer to:

Linear Current Controlled Current Source (CCCS)

Linear Voltage Controlled Current Source (VCCS)

Linear Current Controlled Voltage Source (CCVS)

Linear Voltage Controlled Voltage Source (VCVS)

==Controlled Square Wave Oscillator==

[[File:G25.png]]

This is a four-terminal function generator with a square wave output, whose frequency is controlled by an input voltage. The functional dependency of the output frequency on the input voltage is piecewise linear and is defined as a two-dimensional table similar to a piecewise linear (PWL) controlled source. In the "frequency vs. voltage" curve, the array "cntl_array" defines voltage values in Volts and the array "freq_array" defines the corresponding frequencies in Hz.

Model Identifier: square

Netlist Format:

A<device_name> %vd(<cntl_in_pin> <cntl_in_ref_pin>) %vd(<out_pin>
<out_ref_pin>) <model_name>

.model <model_name> square cntl_array = [<value1> <value2>] freq_array = [<value1> <value2>] {<param1 = value> < param2 = value> ...}

Example:

A1 %vd(1 3) %vd(2 4) square

.model square square cntl_array = [0 1] freq_array = [1 1000]

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|Cntl_array||control array||V||[0 1]||required
|-
|Freq_array||frequency array||Hz||[0 1000]||required
|-
|Out_low||output peak low value||V||-1.0||
|-
|Out_high||output peak high value||V||1.0||
|-
|Duty_cycle||Duty cycle||-||0.5||
|-
|Rise_time||Output rise time||sec||1.0e-9||
|-
|Fall_time||Output fall time||sec||1.0e-9||
|-
|}

==Controlled Triangle Wave Oscillator==

[[File:G26.png]]

This is a four-terminal function generator with a triangle wave output, whose frequency is controlled by an input voltage. The functional dependency of the output frequency on the input voltage is piecewise linear and is defined as a two-dimensional table similar to a piecewise linear (PWL) controlled source. In the "frequency vs. voltage" curve, the array "cntl_array" defined voltage values in Volts and the array "freq_array" defines the corresponding frequencies in Hz.

Model Identifier: triangle

Netlist Format:

A<device_name> %vd(<cntl_in_pin> <cntl_in_ref_pin>) %vd(<out_pin>
<out_ref_pin>) <model_name>

.model <model_name> tirangle cntl_array = [<value1> <value2>]
freq_array = [<value1> <value2>]{<param1 = value> < param2 = value> ...}

Example:

A1 %vd(1 4) %vd(2 3) triangle

.model triangle triangle cntl_array = [0 1] freq_array = [1 1000]

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|Cntl_array||control array||V||[0 1]||required
|-
|Freq_array||frequency array||Hz||[0 1000]||required
|-
|Out_low||output peak low value||V||-1.0||
|-
|Out_high||output peak high value||V||1.0||
|-
|Rise_duty||Rise time duty cycle||0.5||
|-
|}

== Crystal ==

[[File:GK78.png]]

This is a 2-pin parameterized crystal device.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|CM||motional capacitance||F||10f||
|-
|C0||shunt capacitance||F||1p||
|-
|RM||motional resistance||Ohms||100||
|-
|LM||motional inductance||H||100m||
|-
|}

==Current Noise Source==

[[File:GL16.png]]

This is a current noise generator characterized by a spectral density and corner frequency. You have to click the {{key|Edit Model...}} button to access the [[parameters]] of this device.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|En||noise current||A/√Hz||1p||required
|-
|freq||noise corner frequency||Hz||100||required
|-
|}

==Current Source==

[[File:G17B.png]]

Current source has a DC value, a transient behavior, an AC behavior, and distortion parameters. The transient type, AC parameters, and distortion parameters are defined on the first tab of the source's property dialog. The transient expression can be a pulse, sinusoid, exponential, or piecewise linear. The DC value of a current source is its initial transient value. For a source with a sinusoidal transient behavior, for example, the DC value will be equal to its transient offset current. The AC parameters are magnitude and phase. These are used during the AC Frequency Sweep analysis. The distortion parameters, two sets of magnitude and phase, are used during the distortion analysis. The AC and distortion parameters are defined on the second tab of the source's property dialog.

==Current-Controlled Switch==

[[File:G20.png]]

Switches are devices that exhibit high resistance when open (OFF state) and low resistance when closed (ON state). The switch model allows an almost ideal switch to be specified. With careful selection of the on and off resistances, they can effectively represent zero and infinite resistances in comparison to other circuit elements, while sustaining the model condition of a positive, finite value.

There are two versions of Current-Controlled Switch: two-terminal and four-terminal. For the two-terminal device, you must specify the name of the controlling Ammeter or voltage source, as well as the turn-on and turn-off currents in Amperes and on and off resistance values in Ohms. The four-terminal device already provides nodes for a controlling ammeter, and you just specify the rest of [[parameters]]. When the current through the switch or controlling device is greater or equal to the turn-on current, the switch closes. When the current through the switch or controlling device is less than or equal to the turn off current, the switch opens.

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|I_ON||turn-on current||A||0.0||
|-
|I_OFF||turn-off current||A||0.0||
|-
|RON||closed resistance||Ohms||1.0||
|-
|ROFF||open resistance||Ohms||1/GMIN||
|-
|}

==D Flip-Flop==

[[File:G52.png]]

The digital D-type flip-flop is a one-bit, edge-triggered storage element which stores data whenever the clock (CLK) input line transitions from 0 (low) to 1 (high). In addition, there are asynchronous set and reset signals, which are independent of the clock. When SET = RESET = 0, the data on the D line is transferred to the output Q on the rising edge of the clock. The combination SET = 1 and RESET = 0, causes Q = 1. The combination SET = 0 and RESET = 1 causes Q = 0. The combination SET = RESET = 1 is illegal and is resolved by setting both outputs Q and Q_bar to 1.

Truth Table:

<table>
<tr>
<td>
{| class="wikitable"
|-
! CLK !! D !! Q !! Notes
|-
|[[File:NonRising.png]] || X || Qprev || Hold State
|-
|[[File:Rising.png]] || 0 || 0 || Data Transfer
|-
|[[File:Rising.png]] || 1 || 1 || Data Transfer
|-
|}
</td>
</tr>
</table>

==D Latch==

[[File:G54.png]]

The digital D-type latch is a one-bit, level-sensitive storage element which outputs the value on the data (D) line whenever the enable (EN) input line is 1 (high). The value on the data line is stored, i.e., held on the output (Q) line whenever the enable (EN) line is 0 (low). In addition, there are set and reset signals, which are independent of the enable line. When SET = RESET = 0, the data on the D line is transferred to the output Q whenever EN = 1. The combination SET = 1 and RESET = 0, causes Q = 1. The combination SET = 0 and RESET = 1 causes Q = 0. The combination SET = RESET = 1 is illegal and is resolved by setting both outputs Q and Q_bar to 1.

Truth Table:

<table>
<tr>
<td>
{| class="wikitable"
|-
! EN !! D !! Q !! Notes
|-
|0 || X || Qprev || Hold State
|-
|1 || 0 || 0 || Reset
|-
|1 || 1 || 1 || Set
|-
|}
</td>
</tr>
</table>

==Darlington Pair==

[[File:GK108.png]]

A Darlington pair is a three-pin device that consists of two interconnected BJT transistors of the same type. The collectors of two transistors are connected together to provide the "Collector" pin of the pair. The base of the first BJT acts the "Base" pin of the pair. The emitter of the first BJT is internally connected to the base of the second BJT. The emitter of the second BJT acts as the "Emitter" pin of the pair. There are two types of Darlington pair: NPN and PNP. The parameterized generic Darlington pair also contains a diode connected between the collector and emitter pin as well as two base-emitter resistors, one across each BJT.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|is_bjt||bjt saturation current||A||1.0e-12||
|-
|bf_bjt||bjt forward beta||-||150||
|-
|nf_bjt||bjt forward emission coefficient||-||1||
|-
|ise_bjt||B-E leakage saturation current||A||0||
|-
|ne_bjt||B-E leakage emission coefficient||-||1||
|-
|br_bjt||ideal maximum reverse beta||-||1||
|-
|nr_bjt||reverse current emission coefficient||-||1||
|-
|isc_bjt||B-C leakage saturation current||A||0||
|-
|nc_bjt||B-C leakage emission coefficient||-||1||
|-
|rb_bjt||zero bias base resistance||Ohms||0||
|-
|irb_bjt||current where base resistance falls halfway to minimum value||A||inf||
|-
|rbm_bjt||minimum base resistance at high currents||ohms||0||
|-
|re_bjt||emitter resistance||Ohms||0||
|-
|rc_bjt||collector resistance||Ohms||0||
|-
|cje_bjt||B-E zero bias depletion capacitance||F||0||
|-
|vje_bjt||B-E built-in potential||V||0.75||
|-
|mje_bjt||B-E junction grading coefficient||-||0.33||
|-
|cjc_bjt||B-C zero bias depletion capacitance||F||0||
|-
|vjc_bjt||B-C built-in potential||V||0.75||
|-
|mjc_bjt||B-C junction exponential factor||-||0.33||
|-
|tf_bjt||ideal forward transit time||sec||0||
|-
|tr_bjt||ideal reverse transit time||sec||0||
|-
|is_d||diode saturation current||A||1.0e-12||
|-
|rs_d||diode resistance||Ohms||0||
|-
|n_d||diode emission coefficient||-||1||
|-
|cjo_d||diode junction capacitance||F||0||
|-
|vj_d||diode junction potential||V||1||
|-
|m_d||diode grading coefficient|| ||0.5||
|-
|tnom||parameter measurement temperature||deg C||27||
|-
|r1||first base-emitter resistance||Ohms||1k||
|-
|r2||second base-emitter resistance||Ohms||1k||
|-
|}

== DC Bias Sources Vcc, Vee, Vdd, Vss ==

[[File:GL12.png]]

These are simple 1-pin DC voltage sources. Vcc and Vdd provide a positive voltage, while Vee and Vss provide a negative voltage

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|vcc||bias voltage||V||+15||required
|-
|vee||bias voltage||V||-15||required
|-
|vdd||bias voltage||V||+15||required
|-
|vss||bias voltage||V||-15||required
|-
|}

==Digital Buffer==

[[File:G57.png]]

The digital buffer is a single-input, single-output digital device which produces as output a time-delayed copy of its input. The delays associated with the output rise and fall may be different. The model also posts an input load value (in Farads). The output of this model does NOT, however, respond to the total loading it sees on its output; it will always drive the output strongly with the specified delays.

==Digital Clock==

[[File:G56.png]]

The digital clock provides a periodic pulsing input for many other digital devices. Its parameters include the period and pulse width, both expressed in seconds. The pulse width is the time interval during which the clock's output signal is at its logic high level.

==Digital Frequency Divider Block==

[[File:GK49.png]]

The digital frequency divider is a programmable step-down divider which accepts an arbitrary divisor (div_factor), a duty cycle term (high_cycles), and an initial count value (i_count). The generated output is synchronized to the rising edges of the input signal. Rise delay and fall delay on the outputs may also be specified independently.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|div_factor||divide factor||-||2||required
|-
|high_cycles||number of high clock cycles||-||1||
|-
|i_count||output initial count value||-||0||
|-
|rise_delay||L-to-H delay time||sec||1p||
|-
|fall_delay||H-to-L delay time||sec||1p||
|-
|freq_in_load||freq_in capacitive load value||F||1p||
|-
|}

==Digital Input==

[[File:GK46.png]]

The digital input provides the easiest way of defining input data in [[RF.Spice A/D]]. The data is 1-bit and in decimal format by default. You can define multi-bit data as well as a hexadecimal format. The value of the input can be entered either in the device's property dialog or directly in the Schematic Editor using the up and down arrows of the device symbol.

==Digital Oscillator==

[[File:GK41.png]]

The digital oscillator is a mixed-mode device which accepts as input a analog voltage signal. This input is compared to the voltage-to-frequency transfer characteristic specified by the (cntl_array, freq_array) coordinate pairs, and a frequency is obtained which represents a linear interpolation or extrapolation based on those pairs. A digital time-varying signal is then produced with this fundamental frequency. The output waveform, which is the equivalent of a digital clock signal, has rise and fall delays which can be specified independently. In addition, the duty cycle and the phase of the waveform are also variable and can be set by you.

Example SPICE Usage:
a5 1 8 var_clock
.model var_clock d_osc cntl_array = [-2 -1 1 2] freq_array = [1e3 1e3 10e3 10e3] duty_cycle = 0.4 init_phase = 180.0 rise_delay = 10e-9 fall_delay=8e-9)

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|cntl_array||control array||V||[0.0]||required
|-
|freq_array||frequency array||Hz||[1u]||required
|-
|duty_cycle||output duty cycle||-||0.5||
|-
|init_phase||intial phase of output||deg||0||
|-
|rise_delay||rise delay time||sec||1n||
|-
|fall_delay||fall delay time||sec||1n||
|-
|}

==Digital Output==

[[File:GK47.png]]

The digital output provides the easiest way of displaying output data in [[RF.Spice A/D]]. The data is in decimal format by default. You can display it in the hexadecimal format.

==Digital Probe==

[[File:GK48.png]]

The digital probe is very similar to digital output but does not display the value of the data. It is intended as an output signal designator for transient [[tests]].

==Digital Source==

[[File:GK40.png]]

The digital source provides for straightforward descriptions of digital signal vectors in a tabular format. The device reads input from a table or an input file and, at the times specified, and generates the inputs along with the strengths listed. The data is 1-bit and in decimal format by default. You can define multi-bit data as well as a hexadecimal format. You can also make the data periodic with a specified period in seconds or define an initial delay in seconds.

The format of the input file is as shown below:

&lowast; time value

0 0

10n 1

20n 1

30n 0

40n 1

50n 0

==Digital-to-Analog Converter (DAC) Bridge==

[[File:GK43.png]]

The DAC Bridge takes a digital value from a digital node and can only be eiter "0", "1",
or "U". It then outputs the value "out_low", "out_high" or "out_udndef",
or ramps linearly toward one of these "final" values from its curent analog output level. This
ramping speed depends on the values of "t_rise" and "t_fall".

Model Identifier: dac_bridge

Netlist Format:

A<device_name> [<in_pin> {<in2_pin>> ...}] [<out_pin> {<out2_pin> ...}] <model_name>

.model <model_name> dac_bridge {<param1 = value> < param2 = value> ...}

Example:

A [1] [2] dac_bridge

.model dac_bridge dac_bridge out_low = 0 fall_delay = 1n

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|out_low||analog output for 0 digital input||V||0||required
|-
|out_high||analog output for 1 digital input||V||1||required
|-
|out_undef||analog output for undefined digital input||V||0.5||required
|-
|input_load||capacitive input load||F||1p||
|-
|t_rise||L-to-H delay time||sec||1n||
|-
|t_fall||H-to-L delay time||sec||1n||
|-
|}

==Diode==

[[File:G9.png]]

Diodes allow current flow only in one direction, following their symbol's arrow, and thus can be used as simple solid
state switches in AC circuits.

The standard device parameters are AREA, OFF, IC, and T. They are described below:

{| class="wikitable"
|-
|AREA||area factor (optional) (If not specified, the default value is 1.0.)
|-
|OFF||initial condition for the DC analysis (optional)
|-
|IC||initial condition (optional) (Used when a transient analysis is desired, which starts from other than the quiescent operating point.)
|-
|T||operating temperature of the device (optional)
|-
|}

The process models can be either junction diodes or Schottky barrier diodes. Area factor scales the model parameters
IS, RS, CJO, and IBV. VD is the initial voltage, and TEMP is the overriding temperature. Descriptions of the process model parameters are given in the following table:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|IS||saturation current||A||1e-14||
|-
|TNOM||parameter measurement temperature||deg C||27||
|-
|RS||ohmic resistance||Ohms||0||
|-
|N||emission coefficient||-||1||
|-
|TT||transit-time||sec||0||
|-
|CJO||zero-bias junction capacitance||F||0||
|-
|VJ||junction potential||V||1||
|-
|M||grading coefficient||-||0.5||
|-
|EG||activation energy||eV||1.11||
|-
|XTI||saturation current temp. exp.||-||3.0||
|-
|KF||flicker noise coefficient||-||0||
|-
|AF||flicker noise exponent||-||1||
|-
|FC||forward bias junction fit parameter||-||0.5||
|-
|BV||reverse breakdown voltage||V||inf||
|-
|IBV||current at breakdown voltage||A||1e-3||
|-
|}

==Diode Bridge==

[[File:GK107.png]]

This four-pin device is a bridge configuration of four generic diodes.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|IS||saturation current||A||1e-14||
|-
|RS||ohmic resistance||Ohms||0||
|-
|N||emission coefficient||-||1||
|-
|TT||transit-time||sec||0||
|-
|CJO||zero-bias junction capacitance||F||10p||
|-
|VJ||junction potential||V||1||
|-
|M||grading coefficient||-||0.5||
|-
|BV||reverse breakdown voltage||V||1000||
|-
|IBV||current at breakdown voltage||A||1e-3||
|-
|TNOM||parameter measurement temperature||deg C||27||
|-
|}

==Doubly Center-Tapped Ferrite Core Transformer==

[[File:GK98.png]]

This six-pin four-port device models a doubly center-tapped physical transformer with a magnetic ferrite core. Its model is based on XSPICE's magnetic core and inductive coupling models. For this device you need to specify physical parameters like cross sectional area, core length and number of primary and secondary turns. The physical model of the magnetic device is defined by two vectors: magnetic field intensity H in A/m and magnetic flux density B (also known as magnetic induction) in Tesla. The default array values are:

H_array = [-250 -100 -50 -37.5 -25 -12.5 0 12.5 25 37.5 50 100 250]

B_array = [-0.375 -0.36 -0.32 -0.29 -0.24 -0.15 0 0.15 0.24 0.29 0.32 0.36 0.375]

To change the value of H/B arrays, open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|n_prim||number of full-winding primary inductor coupling turns||-||100||required
|-
|n_sec||number of full-winding secondary inductor coupling turns||-||100||required
|-
|area||cross-sectional area||m2||1e-5||
|-
|length||core length||m||0.01||
|-
|}

== DPDT Switch ==

[[File:GK74.png]]

This is an 8-pin device that models a double-pole double-throw switch. It has two input signals and four output pins. When the control voltage is at the high state, the first and second input voltages are transferred to the first and third output pins, respectively. When the control voltage is at the low state, the first and second input voltages are transferred to the second and fourth output pins, respectively.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|von||turn-on voltage||V||3.3||
|-
|voff||turn-off voltage||V||0.3||
|-
|vt||threshold voltage||V||1.0||
|-
|ron||on resistance||Ohms||1.0||
|-
|roff||off resistance||Ohms||1Gig||
|-
|}

== DPST Switch ==

[[File:GK73.png]]

This is a 6-pin device that models a double-pole single-throw switch. It has two input signals and two output signals. When the switch on, the first and second input voltages are transferred to the first and second output pins, respectively. When the switch is off, the output pin do not receive any input signals.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|von||turn-on voltage||V||3.3||
|-
|voff||turn-off voltage||V||0.3||
|-
|vt||threshold voltage||V||1.0||
|-
|ron||on resistance||Ohms||1.0||
|-
|roff||off resistance||Ohms||1Gig||
|-
|}

==Ferrite Core Transformer==

[[File:GK95.png]]

This four-pin two-port device models a physical transformer with a magnetic ferrite core. Its model is based on XSPICE's magnetic core and inductive coupling models. For this device you need to specify physical parameters like cross sectional area, core length and number of primary and secondary turns. The physical model of the magnetic device is defined by two vectors: magnetic field intensity H in A/m and magnetic flux density B (also known as magnetic induction) in Tesla. The default array values are:

H_array = [-250 -100 -50 -37.5 -25 -12.5 0 12.5 25 37.5 50 100 250]

B_array = [-0.375 -0.36 -0.32 -0.29 -0.24 -0.15 0 0.15 0.24 0.29 0.32 0.36 0.375]

To change the value of H/B arrays, open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|n_prim||number of primary turns||-||100||required
|-
|n_sec||number of secondary turns||-||100||required
|-
|area||cross-sectional area||m2||1e-5||
|-
|length||core length||m||0.01||
|-
|}

== FM Modulated Source ==

[[File:GL24.png]]

This is a voltage source with a single-tone frequency modulated waveform. The FM modulation index MDI is defined as the ratio of maximum frequency deviation to maximum signal amplitude.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|V0||offset||V||0||
|-
|VA||amplitude||V||1||
|-
|FC||carrier frequency ||Hz||1||required
|-
|MDI||modulation index||-||0||required
|-
|FS||signal frequency ||Hz||1||required
|-
|}

==Frequency Meter==
[[File:G114.png]]

The Frequency Meter is a four-pin shunt device that is connected in parallel with an AC source just like a voltmeter and measures the operating frequency of the AC circuit. The input pins are connected across the AC source. The voltage across the output pins is equal to the frequency of the source in Hertz within a scale factor SF. Note that the Frequency Meter is designed to work with a single-tone AC source of unit amplitude. If the amplitude of the source is not one, multiply the SF parameter by the non-unit source amplitude value. The output voltage of the Frequency Meter can be used in conjunction with linear or nonlinear dependent sources to model frequency-dependent quantities.

Model Identifier: fmeter

Parameters:

The only parameter is the scale factor SF with a default value of 1.0. Set SF = 1e-6 to read out the frequency in MHz. Set SF = 1e-9 to read out the frequency in GHz. Set SF = 6.283185 (2*pi) to read out the angular frequency ω in radian/s.

== Fuse ==

[[File:GK76.png]]

This is a 2-pin interactive current-controlled switch. If the current passing through the fuse is less than a specified threshold current, the switch is closed. If the current exceeds the threshold level, the fuse breaks and remains open thereafter. The device's symbol changes to display its state.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|r||resistance when intact||Ohms||1.0||
|-
|i_thresh||threshold current||A||1.0||
|-
|}

==Ground==

[[File:G15.png]]

Ground has a voltage of zero (0) and is used as a reference to compute electrical values in the circuit.
All circuits must be grounded to be properly simulated. There is no limit on the number of grounds
you may use in a circuit. All components connected to ground are referenced to a common point and treated
as linked through ground.

==Hysteresis Block (XSPICE)==

[[File:G37.png]]

The Hysteresis block is a simple buffer stage that provides hysteresis of the output with respect to the
input. The in_low and in_high parameter values. The output values are limited to out_lower_limit and
out_upper_limit. The value of \93hyst\94 is added to the in_low and in_high points in order to specify the
points at which the slope of the hysteresis function would normally change abruptly as the input transitions
from a low to a high value. Likewise, the value of \93hyst\94 is subtracted from the in_high and in_low values
in order to specify the points at which the slope of the hysteresis function would normally change abruptly
as the input transitions from a high to a low value. In fact, the slope of the hysteresis function is
never allowed to change abruptly but is smoothly varied whenever the input_dowmain smoothing parameter
is set greater than zero.

Model Identifier: hyst

Netlist Format:

A<device_name> <in_pin> <out_pin> <model_name>

.model <model_name> hyst {<param1 = value> < param2 = value> ...}

Example:

A1 1 2 hysteresis_block

.model hysteresis_block hyst in_low = 0.0 in_high = 1.0

Parameters:

{| class="wikitable"
|-
!Name!!Description!!Default
|-
|In_low||input low value||0.0
|-
|in_high||input high value||1.0
|-
|hyst||hysteresis||0.1
|-
|out_lower_limit||output lower limit||0.0
|-
|out_upper_limit||output upper limit||1.0
|-
|input_domain||input smoothing domain||0.01
|-
|fraction||smoothing fraction/absolute value switch||true
|-
|}

==Ideal Center-Tapped Transformer with Push-Pull Input==

[[File:XFMR4.png]]

The ideal center-tapped transformer with push-pull input is a five-pin three-port device with two primary input ports and one secondary output port. Its model is based on the [[Glossary_of_Generic_Analog_Devices#Ideal_Transformer | Ideal Transformer]], and the relationship between its primary and secondary voltages is given by:

<math> \frac{v_P1}{v_S} = \frac{v_P2}{v_S} = n </math>

where vS is the secondary voltage, vP1 is measured between the top primary pin P1 and the center tap pin, and vP2 is measured between the center tap pin and the bottom primary pin P2. The red dots show the polarity of the windings on each side. This model has one parameter: ratio = n = NP1/NS = NP2/NS, which represents the primary-to-secondary (half-winding) turns ratio.

==Ideal Center-Tapped Transformer with Push-Pull Output==

[[File:XFMR3.png]]

The ideal center-tapped transformer with push-pull output is a five-pin three-port device with one primary input port and two secondary output ports. Its model is based on the [[Glossary_of_Generic_Analog_Devices#Ideal_Transformer | Ideal Transformer]], and the relationship between its primary and secondary voltages is given by:

<math> \frac{v_P}{v_{S1}} = \frac{v_P}{v_{S2}} = n </math>

where vP is the primary voltage, vS1 is measured between the top secondary pin S1 and the center tap pin, and vS2 is measured between the center tap pin and the bottom secondary pin S2. The red dots show the polarity of the windings on each side. This model has one parameter: ratio = n = NP/NS1 = NP/NS2, which represents the primary-to-secondary (half-winding) turns ratio.

==Ideal Diode==

[[File:GK106.png]]

This 2-pin device is a very basic and primitive model of a diode as a rectifier or switch. When the voltage across the device's terminals is positive, it acts as a short circuit. When the voltage across the device's terminals is negative, it acts as an open circuit.

Parameters:

None

==Ideal Operational Amplifier (Op-Amp)==

[[File:GK105.png]]

This is a very basic and primitive model of an operational amplifier. It has only one parameter, open loop gain with a default value of 50,000, which is adequate for most cases. The ideal Op-Amp device doesn't require any DC bias voltages.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|A||open loop gain||-||50,000||
|-
|}

==Ideal Transformer==

[[File:XFMR1.png]]

The ideal transformer is a four-pin two-port device with the following relationship between the voltages and currents at its primary and secondary ports:

<math> \frac{v_P}{v_S} = - \frac{i_S}{i_P} = \frac{N_P}{N_S} = n </math>

where vP, iP, NP are the primary voltage, current and number of turns, respectively, and vS, iS, NS are the secondary voltage, current and number of turns, respectively. The red dots show the polarity of the windings on each side. This model has one parameter: ratio = n = NP/NS, which represents the primary-to-secondary turns ratio. Note that the ideal transformer model is defined based on controlled sources and does not involve any magnetic physical parameters as opposed to mutual inductors or ferrite core transformer.

==Inductance Meter==

[[File:G37.png]]

The Inductance Meter measures the total inductance between a circuit node and the ground. The input pin of the device is connected to the measurement node. The output voltage of the device is then a scaled value equal to the total inductance seen on its input multiplied by the gain parameter. This model is primarily intended as a building block for other models which must sense an inductance value and alter their behavior based upon it. Care must be exercised when connecting an Inductance Meter to the inductors of a circuit. This is due to the fact that inductors are treated by SPICE as current sources. This can cause a problem when an inductor is connected in series with a current source, or in series with a voltmeter, or in series with another inductor.

Model Identifier: lmeter

Netlist Format:

A<device_name> <in_pin> <out_pin> <model_name>

.model <model_name> imeter {<gain = value>}

Example:

A1 1 2 inductance_meter

.model inductance_meter lmeter gain = 1

Parameters:

The only parameter is the gain with a default value of 1.0.

==Inductive Coupler Block==

[[File:GK99.png]]

The Inductive Coupler Block couples any two existing inductors. This block doesn't have any pins because it doesn't actually represent inductors, only the coupling between them. This is useful if you want to
couple two inductors that are in different parts of the circuit, or if you want to couple more than two inductors together. In the latter case, use more than one of these, with each one coupling a pair of inductors.

The standard parameters are Inductor1, Inductor2, and k. Inductor1 is the name of first inductor, Inductor2 is the name of the second inductor, and k is the coefficient of coupling, 0 < k ≤ 1.

==Inductive Coupling (XSPICE)==

[[File:G41.png]]

This function is a conceptual model which is used as a building block to create a wide variety of inductive and magnetic circuit models. This function is normally used in
conjunction with the “core” model, but it can also be used with resistors, hysteresis blocks, etc. to build up systems which mock the behavior of linear and nonlinear components.
The lcouple takes as an input (on the “l” port) a current. This current value is multiplied by the num_turns value, N, to produce an output value (a voltage value which appears on the
mmf_out port). The mmf_out acts similar to a magnetomotive force in a magnetic circuit;
when the lcouple is connected to the “core” model, or to some other resistive device, a current will flow. This current value (which is modulated by whatever the lcouple is
connected to) is then used by the lcouple to calculate a voltage “seen” at the “l” port. The voltage is a function of the derivative with respect to time of the current value seen at mmf_out.

The most common use for lcouple will be as a building block in the construction of transformer models. To create a transformer with a single input and a single output, you
would require two lcouple models plus one “core” model.

Example:

A1 (1 0) (2 3) lcouple1

.model lcouple1 lcouple ( num_turns = 10 )

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|num_turns||number of turns||-||1||required
|-
|}

==Inductor==

[[File:GK121.png]]

Inductors are used to store magnetic energy. An inductor's ability to counteract current changes passing through it is called its inductance (L), which is
measured in Henrys. In a (steady-state) DC analysis, the inductor acts like a short circuit. It is indeed treated as a current source, which can be problematic if an inductor is connected in series with a current source, or in series with a voltmeter, or in series with another inductor. The resistor may be of negligible value or one that accounts for the coil resistance of the inductor. In AC and transient analyses, the inductor develops a voltage across it in response to the changing magnetic
flux within its coil.

An inductor's transient behavior is described by the equation:

v(t) = L*(di(t)/dt)

The inductor's initial condition is optional. It is the initial value of the inductor current in Amperes that flows from node N+ through the inductor to node N-. The only time that the initial current matters is when the simulator performs a transient analysis, and the "Use Initial Conditions" checkbox is checked.

An inductor's AC behavior is described by the equation:

v = j ω * L * i

All inductor names must begin with L.

Netlist Format:

L<device_name> <N+> <N-> <value>

Example:

L1 1 2 10u

==Inductor with Ferrite Core==

[[File:GK94.png]]

This 2-pin device models a physical inductor with a magnetic ferrite core. Its model is based on XSPICE's magnetic core and inductive coupling models. Unlike the standard inductor device, you do not specify an inductance value for the inductor with ferrite core. Rather, you specify physical parameters like cross sectional area, core length and number of turns. The physical model of the magnetic device is defined by two vectors: magnetic field intensity H in A/m and magnetic flux density B (also known as magnetic induction) in Tesla. The default array values are:

H_array = [-250 -100 -50 -37.5 -25 -12.5 0 12.5 25 37.5 50 100 250]

B_array = [-0.375 -0.36 -0.32 -0.29 -0.24 -0.15 0 0.15 0.24 0.29 0.32 0.36 0.375]

To change the value of H/B arrays, open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|n_turns||number of turns||-||100||required
|-
|area||cross-sectional area||m2||1e-5||
|-
|length||core length||m||0.01||
|-
|}

== Insulated Gate Bipolar Transistor (IGBT)==

[[File:GK111.png]]

This is a 3-pin parameterized Insulated Gate Bipolar Transistor (IGBT) device with three pins: Collector(C), Gate (G), and Emitter (E). It is primarily used as a fast electronic switch. The IGBT combines the simple gate-drive characteristics of MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors. The device's model consists of an isolated gate FET for the control input, and a PNP bipolar power transistor as a switch. To further modify the internal device models, open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|cap||parasitic capacitance||F||1n||
|-
|rg||gate resistance||Ohms||5||
|-
|re||emitter resistance||Ohms||0.05||
|-
|bf||pnp transistor forward beta||-||1||
|-
|vto||MOSFET threshold voltage||V||5||
|-
|kt||MOSFET transconductance||-||2.99||
|-
|cgso||MOSFET voltage gate-source overlap capacitance||F||5u||
|-
|nd||diode emission coefficient||-||50||
|-
|cjo||diode junction capacitance||F||1n||
|-
|}

==Interactive Switch==

[[File:GK75.png]]

This device is an interactive switch that can be closed or opened either directly from the Schematic Editor by clicking on its symbol or from the Instrument Panel.

==Junction Field Effect Transistor (JFET)==

[[File:G12.png]]

The JFET is the simplest transistor device and has three pins: gate, drain and source. The JFET defaults are based on the Shichman and Hodges FET model. This is a square-law device because of the expression relating the drain current to the gate-to-source voltage:
Idrain=*(VGS-Vthreshold)2. In real JFETs, near the saturation point, the drain currents vary with the drain voltages. This can be modeled by the following formula: Idrain=*(VGS-VTO)2*(1+*VDS), which yields an increasing
drain current for increasing values of VDS.

The gate-to-source and gate-to-drain junctions each have a nonlinear capacitor. The zero-bias capacitance value is selected for each junction.

The standard device parameters are AREA, OFF, IC, and T. They are described below:

{| class="wikitable"
|-
|AREA||area factor (optional) (If not specified, the default value is 1.0.)
|-
|OFF||initial condition for the DC analysis (optional)
|-
|IC||initial condition (optional) (Used when a transient analysis is desired, which starts from other than the quiescent operating point.)
|-
|T||operating temperature of the device (optional)
|-
|}

The process model parameters are listed in the following table:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!EXAMPLE
|-
|VTO||threshold voltage||V||-2||-2
|-
|BETA||transconductance parameter||A/V2||1.0e-4||1.0e-3
|-
|LAMBDA||channel-length modulation parameter||1/V||0||1.0e-4
|-
|RD||drain ohmic resistance||ohms||0||100
|-
|RS||source ohmic resistance||ohms||0||100
|-
|CGS||zero-bias G-S junction capacitance||F||0||5pF
|-
|CGD||zero-bias G-D junction capacitance||F||0||1pF
|-
|PB||gate junction potential||V||1||0.6
|-
|IS||gate junction saturation current||A||1.0e-14||1.0e-14
|-
|B||doping tail parameter|| ||1||1.1
|-
|KF||flicker-noise coefficient|| ||0||
|-
|AF||flicker-noise exponent|| ||1||
|-
|FC||coefficient for forward-bias depletion capacitance formula|| ||0.5||
|-
|TNOM||parameter measurement temperature||deg. C||27||50
|-
|}

== Light Emitting Diode (LED) ==

[[File:GK114.png]]

This is a two-pin parameterized diode device that emits light of a certain wavelength when it is forward-biased.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|rs||ohmic resistance||Ohms||10||
|-
|vj||junction potential||V||0.6||
|-
|cjo||zero bias junction capacitance||F||10p||
|-
|tt||transit time||sec||0.1n||
|-
|}

==Linear Current-Controlled Current Source (CCCS)==

[[File:G2.png]]

The CCCS is a current source whose current is directly proportional to the current across a controlling Ammeter or a voltage source. There are two versions: two-terminal and four-terminal. For the two-terminal device, you must specify the name of the controlling Ammeter or voltage source, as well as the current gain, which has a default value of one. The four-terminal device already provides nodes for a controlling ammeter, and you just specify the current gain.

Model Identifier: cccs

Netlist Format:

F<device_name> <N+> <N-> <controlling_device_name> <value>

Example:

F1 1 0 V1 1.0

==Linear Current-Controlled Voltage Source (CCVS)==

[[File:G4.png]]

The CCVS is a voltage source whose voltage is directly proportional to the current through a controlling ammeter or a voltage source. There are two versions: two-terminal and four-terminal. For the two-terminal device, you must specify the name of the controlling Ammeter or voltage source, as well as the trans-resistance gain, which has a default value of one. The four-terminal device already provides nodes for a controlling ammeter, and you just specify the trans-resistance gain.

Model Identifier: ccvs

Netlist Format:

H<device_name> <N+> <N-> <controlling_device_name> <value>

Example:

H1 1 0 V1 1.0

==Linear Voltage-Controlled Current Source (VCCS)==

[[File:G3.png]]

The VCCS is a current source whose current is directly proportional to the voltage across a controlling voltmeter or the voltage between two circuit nodes. There are two versions: two-terminal and four-terminal. For the two-terminal device, you must specify the name of the controlling voltmeter or the two controlling nodes, as well as the trans-conductance gain, which has a default value of one. The four-terminal device already provides nodes for a controlling voltmeter, and you just specify the trans-conductance gain.

Model Identifier: vccs

Netlist Format:

G<device_name> <N+> <N-> <NC+> <NC-> <value>

Example:

G1 1 0 2 0 1.0

==Linear Voltage-Controlled Voltage Source (VCVS)==

[[File:G1.png]]

The VCVS is a voltage source whose voltage is directly proportional to the voltage across a controlling voltmeter of the voltage between two circuit nodes. There are two versions: two-terminal and four-terminal. For the two-terminal device, you must specify the name of the controlling voltmeter or the two controlling nodes, as well as the voltage gain, which has a default value of one. The four-terminal device already provides nodes for a controlling voltmeter, and you just specify the voltage gain.

Model Identifier: vcvs

Netlist Format:

E<device_name> <N+> <N-> <NC+> <NC-> <value>

Example:

E1 1 0 2 0 1.0

==Lossless Transmission Line==

[[File:G21.png]]

The lossless transmission line is a four-pin two-port device that models only one propagating mode of an ideal transmission line. When using this SPICE model, should all four nodes of the actual circuit be distinct, two modes may be activated, and this device would be insufficient for that purpose. To circumvent this potential problem, two transmission line devices would be required. Due to the implementation details, you may produce more accurate simulation results with a lossy transmission line device with zero loss.

Optional initial condition parameters are the voltage and current at each of the transmission line ports.

The standard device parameters are Z0, TD, F, NL, IC, described below:

{| class="wikitable"
|-
|Z0||characteristic impedance
|-
|TD||transmission delay
|-
|F||frequency
|-
|NL||normalized electrical length of the transmission line with respect to the wavelength in the line at frequency F. (If F is specified, but NL is not, the default is 0.25.)
|-
|IC||initial condition (Specifies the voltage and current at each of the transmission line ports.)
|-
|}

==Lossy Transmission Line==

[[File:G22.png]]

The lossy transmission line is a four-pin two-port convolution model for uniform constant-parameter distributed lines. MNAME is the process model name, which
includes a set of pre-specified options as described below.

The device model [[parameters]] are listed in the following table:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!EXAMPLE
|-
|R||resistance /length||Ohm /m||0.0||0.2
|-
|L||inductance/length||henrys/m||0.0||9.13e-9
|-
|C||capacitance/length||farads/m||0.0||3.65e-12
|-
|LEN||length of line||m||none||1.0
|-
|LININTERP||use linear interpolation||flag||not set||set
|-
|QUADINTERP||use quadratic interpolation||flag||not set||set
|-
|MIXEDINTERP||use linear when quadratic seems bad||flag||not set||set
|-
|COMPACTREL||special reltol for straight line checking||flag||RETOL||1.0e-3
|-
|COMPACTABS||special abstol for straight line checking||flag||ABSTOL||1.0e-9
|-
|NOCONTROL||don't do complex time control||flag||not set||set
|-
|STEPLIMIT||always limit timestep to 0.8*(delay of line)|| || ||
|-
|NOSTEPLIMIT||don't always limit timestep to 0.8*(delay of line)||flag||not set||set
|-
|TRUNCNR||use Newton-Raphson method for timestep calculation in LTRAtrunc||flag||not set||set
|-
|TRUNCDONTCUT||don't limit timestep to keep impulse-response errors low||flag||not set||set
|-
|}


The RLC (uniform transmission line with series loss only), RC (uniform RC line), LC (lossless transmission
line), and RG (distributed series resistance and parallel conductance only) lines have been implemented.
The length (LEN) must be given. COMPACTREL and COMPACTABS control the compaction of past history values
used in convolution. Larger values for these lower accuracy but improve speed. These are used with the
TRYTOCOMPACT option. 

==Magnetic Core (XSPICE)==

[[File:G42.png]]

This device is used as a building block to create a wide variety of inductive and magnetic circuit models. It is almost always to be used in conjunction with the "lcouple" model to build up systems which simulate the behavior of linear and nonlinear magnetic components. There are two fundamental modes of operation for the core model. These are the "PWL" mode (which is the default and most
likely to be of use to you) and the "Hysteresis" mode.

PWL Mode (mode = 1)

In the PWL mode, the model takes a voltage as input which it treats as a magnetomotive force (mmf) value. This value is divided by the total effective length of the core to produce a value for the Magnetic Field Intensity, H, which is then used to find the corresponding Flux Density, B, using the piecewise linear relationship described by you in the H_array / B_array coordinate pairs. B is then multiplied by the cross-sectional area of the core to find the Flux value, which is output as a current. The pertinent mathematical equations are:

H = mmf / L, where L = Length (in apmere-turns/meter)

B = f(H)

Φ = B * A, where A = Area

The B value is derived from a piecewise linear transfer function described to the model by the H_array and B_array coordinate pairs. This transfer function does not include hysteretic effects; for that, you would need to substitute a HYST model for the core. The magnetic flux value Φ in turn is used by the "lcouple"
code model to obtain a value for the voltage reflected back across its terminals to the driving electrical circuit.

Hysteresis Mode (mode = 2)

In the Hysteresis mode, the model takes a voltage as input which it treats as a magnetomotive force (mmf)
value. This value is used as input to the equivalent of a hysteresis code model block. The parameters
defining the input low and high values, the output low and high values, and the amount of hysteresis are
as in that model. The output from this mode, as in PWL mode, is a current value which is seen across the magnetic core port.

One final note to be made about the two core models is that certain parameters are specific to one or the other. In particular, the in_low, in_high, out_lower_limit, out_upper_limit, and hysteresis parameters are not available in PWL mode. Likewise, the H_array, B_array, area, ad length values are unavailable
in Hysteresis mode. The input_domain and fraction parameters are common to both modes (though their behavior is somewhat different; for explanation of the input_domain and fraction values for the Hysteresis mode, please refer to the Hysteresis Block discussion.

Model Identifier: core

Netlist Format:

A<device_name> <mc1 _pin> <mc2_pin> <model_name>

.model <model_name> core area = <value> length = <value> H_array = [<value1> <value2>] B_array = [<value1> <value2>]
{<param1 = value> < param2 = value> ...}

Example:

A1 1 2 core

.model core core area = 1 length = 1 H_array = [0 1] B_array = [0 1]

Parameters:

{| class="wikitable"
|-
!Name!!Description!!Default!!Notes
|-
|H_array||magnetic field array||[0 1]||required
|-
|B_array||flux density array||[0 1]||required
|-
|Area||cross-sectional area||1||required
|-
|Length||core length||1||required
|-
|Input_domain||input smoothing domain||0.01||
|-
|Fraction||smoothing fraction/abs switch||True||
|-
|Mode||mode switch (1=pwl, 2=hyst)||1||
|-
|In_low||input low value||0.0||
|-
|In_high||input high value||1.0||
|-
|Hyst||hysteresis||0.1||
|-
|Out_lower_limit||output lower limit||0.0||
|-
|Out_upper_limit||output upper limit||1.0||
|-
|}

==Marker==

[[File:G16.png]]

The marker serves several purposes:

* It can appear as a default plot in simulations if the "Voltage Probe" box is checked.

* It can be used to set the initial voltage or voltage guess at the node it is connected to.

* It can be used as a port for a subcircuit when you choose the checkbox labeled "Use as Subcircuit Port" is checked.

* It can be used to explicitly set a node number in place of the arbitrarily assigned node number by the program. In this case, make sure the "Set Node Index" box is checked. Otherwise, it will act as just a voltage probe.

* It can be used to connect different parts of a circuit in place of wires. To use markers as virtual connectors, place them at points where wires would otherwise connect. Then set the Part Title of the two (or more) markers to the same name, and they will act as a single circuit node.

==MESFET==

[[File:G14.png]]

The MESFET is a Schottky-barrier gate FET with six times greater electron mobility than silicon. MESFETs are important devices for creating high frequency circuits. They function by creating a potential barrier between the gate and the channel when the metal gate
contacts the gallium-arsenide substrate. Electron velocity saturates for fields approximately ten times lower than with silicon. The Curtice model includes linear and saturated operation.

The standard parameters are AREA, OFF, IC, and T. They are described below:

{| class="wikitable"
|-
|AREA||area factor (optional) (If not specified, the default value is 1.0.)
|-
|OFF||initial condition for the DC analysis (optional)
|-
|IC||initial condition (optional) (Used when a transient analysis is desired, which starts from other than the quiescent operating point.)
|-
|T||operating temperature of the device (optional)
|-
|}

All the MESFET process model parameters are described in the following table:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!EXAMPLE
|-
|VTO||pinch-off voltage||V||-2||-2
|-
|BETA||transconductance parameter||A/V2||1.0e-4||1.0e-3
|-
|B||doping tail extending parameter||1/V||0.3||0.3
|-
|ALPHA||saturation voltage parameter||1/V||2||2
|-
|LAMBDA||channel-length modulation parameter||1/V||0||1.0e-4
|-
|RD||drain ohmic resistance||Ohm||0||100
|-
|RS||source ohmic resistance||Ohm||0||100
|-
|CGS||zero-bias G-S junction capacitance||F||0||5pF
|-
|CGD||zero-bias G-D junction capacitance||F||0||1pF
|-
|PB||gate junction potential||V||1||0.6
|-
|KF||flicker noise coefficient||-||0||
|-
|AF||flicker noise exponent||-||1||
|-
|FC||coefficient for forward-bias depletion capacitance formula||-||0.5||
|-
|}

==MOSFET==

[[File:G13.png]]

The MOSFET is an active device that has up to 4 pins. The three standard pins are gate, drain, and source. These are given in the default symbol. The bulk node, which is grounded by default, is the fourth pin. The MOSFET with the bulk is named mos_n_lvl1_4 (the lvl1 is for level 1, the n for nmos, and the 4 for 4 pins.)

The standard [[parameters]] are L, W, AD, AS, PD, PS, NRD, NRS, OFF, IC, and T. They are described below:

{| class="wikitable"
|-
|L||channel length, in meters
|-
|W||channel width, in meters
|-
|AD,AS||areas of the drain and source diffusions, in meters2
|-
|PD,PS||perimeters of drain and source junctions, in meters(They default to 0.0.)
|-
|NRD,NRS||equivalent number of squares of the drain and source diffusions (These values multiply the sheet resistance for an accurate representation of parasitic series drain and source resistance of each transistor. The default value is 1.0.)
|-
|OFF||initial condition for the DC analysis (optional)
|-
|IC||initial condition (optional) (Used when a transient analysis is desired, which starts from other than the quiescent operating point.)
|-
|T||operating temperature of the device (optional)
|-
|}

There are five different default models: square-law I-V characteristic, analytical, semi-empirical, and BSIM and BSIM2 (Berkeley Short-channel IGFET Model), which include second-order effects such as channel-length
modulation, subthreshold conduction, scattering-limited velocity saturation, small-size effects, and charge-controlled capacitance. The process parameter LEVEL specifies which of the models is chosen as indicated below:

{| class="wikitable"
|-
|LEVEL 1||Schichman-Hodges
|-
|LEVEL 2||MOS2
|-
|LEVEL 3||MOS3
|-
|LEVEL 4||BSIM
|-
|LEVEL 5||BSIM2
|-
|LEVEL 6||MOS6
|-
|}

The process model [[parameters]] for levels 1,2,3, and 6 are listed in the following table:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!EXAMPLE
|-
|LEVEL||model index|| ||1||
|-
|VTO||zero-bias threshold voltage||V||0.0||1.0
|-
|KP||transconductance parameter||A/V2||2e-5||3.1e-5
|-
|GAMMA||bulk threshold parameter||V1/2||0.0||0.37
|-
|PHI||surface potential||V||0.6||0.65
|-
|LAMBDA||channel-length modulation (level 1 & 2 only)||1/V||0.0||0.02
|-
|RD||drain ohmic resistance||ohms||0.0||1.0
|-
|RS||source ohmic resistance||ohms||0.0||1.0
|-
|CBD||zero-bias B-D junction capacitance||F||0.0||20fF
|-
|CBS||zero-bias B-S junction capacitance||F||0.0||20fF
|-
|IS||bulk junction saturation current||A||1.0e-14||1.0e-15
|-
|PB||bulk junction potential||V||0.8||0.87
|-
|CGSO||gate-source overlap capacitance per meter channel width||F/m||0.0||4.0e-11
|-
|CGDO||gate-drain overlap capacitance per meter channel width||F/m||0.0||4.0e-11
|-
|CGBO||gate-bulk overlap capacitance per meter channel length||F/m||0.0||2e-10
|-
|RSH||drain & source diffusion sheet resistance||ohm/area||0.0||10.0
|-
|CJ||zero-bias bulk junction bottom capacitance per meter2 junction area||F/m2||0.0||2e-4
|-
|MJ||bulk junction bottom grading coefficient|| ||0.5||0.5
|-
|CJSW||zero-bias bulk junction sidewall capacitance per meter junction perimeter||F/m||0.0||1.0e-9
|-
|MJSW||bulk junction sidewall grading coefficient|| ||0.5, 0.33 (level1), (level2,3)||
|-
|JS||bulk junction saturation current per meter2 of junction area||A/m2|| ||1.0e-8
|-
|TOX||oxide thickness||meter||1.0e-7||1.0e-7
|-
|NSUB||substrate doping||1/cm3||0.0||4.0e15
|-
|NSS||surface state density||1/cm2||0.0||1.0e10
|-
|NFS||fast surface state density||1/cm2||0.0||1.0e10
|-
|TPG||type gate material(+1 if opp. substrate, 0 if A1 gate, -1 if same as substrate)|| ||1.0||
|-
|XJ||metallurgical junction depth||meter||0.0||1
|-
|LD||lateral diffusion||meter||0.0||0.8
|-
|UO||surface mobility||cm2/Vs||600||700
|-
|UCRIT||critical field for mobility degradation (level2 only)||V/cm||1.0e4||1.0e4
|-
|UEXP||critical field exponent in mobility degradation (level2 only)|| ||0.0||0.1
|-
|UTRA||transverse field coefficient (deleted for level2)|| ||0.0||0.3
|-
|VMAX||maximum drift velocity of carriers||m/s||0.0||5.0e4
|-
|NEFF||total channel-charge (fixed and mobile) coefficient (level2 only)|| ||1.0||5.0
|-
|KF||flicker noise coefficient|| ||0.0||1.0e-26
|-
|AF||flicker noise exponent|| ||1.0||1.2
|-
|FC||coefficient for forward bias depletion capacitance formula|| ||0.5||
|-
|DELTA||width effect on threshold voltage (level2,3)|| ||0.0||1.0
|-
|THETA||mobility modulation (level3 only)||1/V||0.0||0.1
|-
|ETA||static feedback (level3 only)|| ||0.0||1.0
|-
|KAPPA||saturation field factor (level3 only)|| ||0.2||0.5
|-
|TNOM||parameter measurement temperature||deg. C||27||50
|-
|}

The BSIM model has no default parameters, and leaving one out is considered an error. The additional process model parameters for level 4 and 5 models are listed in the following table:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS
|-
|VFB||flat-band voltage||V
|-
|PHI||surface inversion potential||V
|-
|K1||body effect coefficient||V1/2
|-
|K2||drain/source depletion charge-sharing coefficient||
|-
|ETA||zero-bias drain-induced barrier-lowering coefficient||
|-
|MUZ||zero-bias mobility||cm2/V-s
|-
|DL||shortening of channel||m
|-
|DW||narrowing of channel||m
|-
|U0||zero-bias transverse-field mobility degradation coefficient||V-1
|-
|U1||zero-bias velocity saturation coefficient||m/V
|-
|X2MZ||sens. of mobility to substrate bias at Vds=0||cm2/V2-s
|-
|X2E||sens. of drain-induced barrier lowering effect to substrate bias||V-1
|-
|X3E||sens. of drain-induced barrier lowering effect to drain bias at Vds= Vdd||V-1
|-
|X2U0||sens. of transverse field mobility degradation to substrate bias||V-2
|-
|X2U1||sens. of velocity saturation effect to substrate bias||mV-2
|-
|MUS||mobility at zero substrate bias and at Vds= Vdd||cm2/V2-s
|-
|X2MS||sens. of mobility to substrate bias at Vds= Vdd||cm2/V2-s
|-
|X3MS||sens. of mobility to drain bias at Vds= Vdd||cm2/V2-s
|-
|X3U1||sens. of velocity saturation effect on drain bias at Vds= Vdd||mV-2
|-
|TOX||gate oxide thickness||m
|-
|TEMP||temperature at which [[parameters]] were measured||deg. C
|-
|VDD||measurement bias range||V
|-
|CGDO||gate-drain overlap capacitance per meter channel width||F/m
|-
|CGSO||gate-source overlap capacitance per meter channel width||F/m
|-
|CGBO||gate-bulk overlap capacitance per meter channel length||F/m
|-
|XPART||gate-oxide capacitance-charge model flag||
|-
|N0||zero-bias subthreshold slope coefficient||
|-
|NB||sens. of subthreshold slope to substrate bias||
|-
|ND||sens. of subthreshold slope to drain bias||
|-
|RSH||drain and source diffusion sheet resistance||ohms/area
|-
|JS||source drain junction current density||A/m2
|-
|PB||built-in potential of source drain junction||V
|-
|MJ||grading coefficient of source drain junction||
|-
|PBSW||built-in potential of source drain junction sidewall||V
|-
|MJSW||grading coefficient of source drain junction sidewall||
|-
|CJ||source drain junction capacitance per unit area||F/ m2
|-
|CJSW||source drain junction sidewall capacitance per unit length||F/m
|-
|WDF||source drain junction default width||m
|-
|DELL||source drain junction length reduction||m
|-
|}

XPART=0 selects a 40/60 drain/source charge partition; XPART=1 selects a 0/100 partition.

==Mutual Inductors==

[[File:GK100.png]]

The mutual inductors device is a pair of inductors that are coupled to each other. L1 and L2 are the names of two inductors. You have to specify the inductance of inductor L1, the inductance of inductor L2, the initial current through each, and the coupling coefficient k, 0 ≤ k ≤ 1. The mutual inductance M expressed in units of H can be calculated using the following definition:

<math> k = \frac{M}{\sqrt{L_1 L_2}} </math>

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|inductance1||inductance of inductor 1||H||1||
|-
|inductance2||inductance of inductor 2||H||1||
|-
|ic1||initial current through inductor 1||A||0||
|-
|ic2||initial current through inductor 2||A||0||
|-
|k||coefficient of coupling||-||1.0||
|-
|}

==Non-Ideal Current Transformer==

[[File:GK104.png]]

This 8-pin device models a non-ideal lossy current transformer. Its model consists of an ideal transformer with more secondary turns than primary turns along with a number of parasitic elements. The interior pins with red wires give you direct access to the primary and secondary pins of the internal ideal transformer. on each side of the internal ideal transformer, there is a series leakage inductance LLk, followed by a shunt winding capacitance CWk and a series winding resistance RWk, which connects to the exterior positive pin on that side. The inter-winding resistance R12 is connected across the negative pins of the primary and secondary of the ideal transformer model. In a more complete model, an external inductor LM can be connected between the positive and negative interior pins of either the primary or secondary to account for the effects of the magnetization inductance.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|ratio||secondary-to-primary turns ratio||-||2||required
|-
|rw1||primary winding resistance||Ohms||0.1||
|-
|rw2||secondary winding resistance||Ohms||0.1||
|-
|ll1||primary leakage inductance||H||1m||
|-
|ll2||secondary leakage inductance||H||1m||
|-
|cw1||primary winding capacitance||F||1p||
|-
|cw2||secondary winding capacitance||F||1p||
|-
|r12||inter-winding resistance||Ohms||10Meg||
|-
|}

==Non-Ideal Diode==

[[File:G9.png]]

This 2-pin device is a basic simplified model of a diode as a rectifier or switch. When forward-biased, it acts as a low-valued voltage source. When reverse-biased, it acts as an open circuit until the reverse voltage exceeds the specified breakdown voltage. Then it acts as a high-valued voltage source of the reverse polarity.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|vf||forward drop voltage||V||0.5||required
|-
|vr||reverse breakdown voltage||V||100||required
|-
|}

==Non-Ideal Voltage Transformer==

[[File:GK103.png]]

This 8-pin device models a non-ideal lossy voltage transformer. Its model consists of an ideal transformer with more primary turns than secondary turns along with a number of parasitic elements. The interior pins with red wires give you direct access to the primary and secondary pins of the internal ideal transformer. There are series combinations of a winding resistance RWk and a leakage inductance LLk on the primary and secondary sides. These are connected between the positive interior and exterior pins on each side. There are also two shunt branches at the inputs of the primary and secondary sides (connected between the positive and negative exterior pins), each consisting of a distributed turn-to-turn winding resistance RDCk in series with a distributed turn-to-turn winding capacitance CWk. The inter-winding capacitance CWW12 is connected across the positive pins of the primary and secondary of the ideal transformer model. In a more complete model, an external inductor LM can be connected between the positive and negative interior pins of either the primary or secondary to account for the effects of the magnetization inductance.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|ratio||primary-to-secondary turns ratio||-||2||required
|-
|rw1||primary winding resistance||Ohms||0.1||
|-
|rw2||secondary winding resistance||Ohms||0.1||
|-
|ll1||primary winding leakage inductance||H||1m||
|-
|ll2||secondary winding leakage inductance||H||1m||
|-
|rdc1||primary distributed turn-to-turn winding resistance||Ohms||1u||
|-
|cw1||primary distributed turn-to-turn winding capacitance||F||1p||
|-
|rdc2||secondary distributed turn-to-turn winding resistance||Ohms||1u||
|-
|cw2||secondary distributed turn-to-turn winding capacitance||F||1p||
|-
|cww12||inter-winding capacitance||F||1p||
|-
|}

==Nonlinear Capacitor==

[[File:GK89.png]]

The nonlinear capacitor model allows the capacitor to be described by an arbitrary relationship between the capacitor's charge Q and the voltage V across the capacitor. In other words, Q = f(V). The nonlinear capacitance is then defined as C(V) = dQ/dV. You need to define the charge Q by a mathematical expression in the voltage V. You have to open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text. Enter any mathematical expression in the variable "v(pos,neg)" standing for the terminal voltage. The default expression is:

{ C_DEF } * v(pos,neg)

which implies a linear capacitor, where Q = CDEF V. Therefore, C = C(V) = dQ/dV = CDEF.

Another example is 1e-4*(v(pos,neg))^2.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|C_DEF||default capacitance||F||1||
|-
|}

==Nonlinear Conductor==

[[File:GK88.png]]

The nonlinear conductor model allows the conductor to be described by an arbitrary relationship between the conductor's current I and the voltage V across the conductor. In other words, I = f(V). The nonlinear conductance is then defined as G(V) = dI/dV. You need to define the current I by a mathematical expression in the voltage V. You have to open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text. Enter any mathematical expression in the variable "v(pos,neg)" standing for the terminal voltage. The default expression is:

{ G_DEF } * v(pos,neg)

which implies a linear conductor, where I = GDEF V. Therefore, G = G(V) = dI/dV = GDEF.

Another example is 1e-4*(v(pos,neg))^2.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|G_DEF||default capacitance||S||1||
|-
|}

==Nonlinear Dependent Sources==

[[File:G18.png]]

Nonlinear dependent (arbitrary) sources use an equation or mathematical expression to describe their behavior. One and only one of the two forms: V=<expr> or I=<expr> must be given.

Netlist Format:

B<device_name> v = <expression>

B<device_name> i = <expression>

Examples:

v = I(v1) + 3* I(v2)

I = v(i1) + 3* v(2) + 5 * v(3) ^2

The first example is a current-controlled voltage source. The v on the left side of the equation
indicates that it is a voltage source. I(v1) and I(v2) are the currents through voltage sources named v1 and v2, respectively.

The second example is a voltage-controlled current source. v(2) and v(3) represents the voltages at nodes 2 and 3, respectively, and v(i1) represents the voltage across a current source named i1.

The following mathematical functions defined for real variables can be used in the expressions:

abs(x), acos(x), acosh(x), asin(x), asinh(x), atan(x), atanh(x), cos(x), cosh(x), exp(x), ln(x), log(x), max(x,y), min(x,y), pwr(x,y), pwrs(x,y), sgn(x), sin(x), sinh(x), sqrt(x), tan(x), tanh(x), u(x), uramp(x).

The function "sgn" is the signum function and its value is 1 if the argument is positive or zero and -1 if the argument is negative.
The function "u(x)" is the unit step and "uramp(x)" is the integral of the unit step. The
unit step is one if its argument is greater than zero and zero if its argument is less than zero. The
ramp function (uramp) is 0 for argument values less than zero and equal to the argument for argument values
greater than zero.

The following operators are permissible: +, -, *, /, and ^.

The power functions have equivalent expressions: pwr(x,y) = x^y and pwrs(x,y) = sgn(x)*abs(x)^y.

Two constants can also be used in expressions: pi = 3.1415926 and e = 2.7182818.

There is a conditional function with the syntax IF(Condition, Expression1, Expression2). If "Condition" is met, then the return value of the function is Expression1; otherwise, it is Expression2. An example of this type of function is IF(v(1)>=0,1,-1), which is equivalent to sgn(v(1)).

To get time into an expression, integrate the current from a constant current source with a capacitor
and use the voltage across the capacitor.

Note: All the functions and expressions are case-insensitive.

==Nonlinear Inductor==

[[File:GK90.png]]

The nonlinear inductor model allows the inductor to be described by an arbitrary relationship between the inductor's magnetic flux Φ and the current I flowing through the inductor . In other words, Φ = f(I). The nonlinear inductance is then defined as L(I) = dΦ/dI. You need to define the flux Φ by a mathematical expression in the current I. You have to open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text. Enter any mathematical expression in the variable "i(vx)" standing for the device current. The default expression is:

{ L_DEF } * i(vx)

which implies a linear inductor, where Φ = LDEF I. Therefore, L = L(I) = dΦ/dI = LDEF.

Another example is 1e-4*(i(vx))^2.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|L_DEF||default inductance||H||1||
|-
|}

==Nonlinear Resistor==

[[File:GK87.png]]

The nonlinear resistor model allows the resistor to be described by an arbitrary relationship between the voltage V across the resistor and its current I. In other words, V = f(I). The nonlinear resistance is then defined as R(I) = dV/dI. You need to define the voltage V by a mathematical expression in the current I. You have to open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text. Enter any mathematical expression in the variable "i(vx)" standing for the device current. The default expression is:

{ R_DEF } * i(vx)

which implies a linear resistor, where V = RDEF I. Therefore, R = R(I) = dV/dI = RDEF.

Another example is 10*(i(vx))^2.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|R_DEF||default resistance||Ω||1||
|-
|}

==Operational Amplifier (Op-Amp)==

[[File:GK105.png]]

This three-pin device models a parameterized operational amplifier with a very high voltage gain, a very high input impedance and a very low output impedance. The behavioral model of the parameterized Op-Amp device is based on the algorithm found in the book Macromodeling with Spice,
authored by Connelly & Choi, published by Prentice Hall. The default parameters are those of the 741 Op-Amp. This device doesn't require external DC bias voltage sources. Its positive and negative DC bias voltages are specified as its parameters. Sometimes the simulation doesn't converge if there is no DC path from the output of the Op-Amp to the ground.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|r_in_dm||differential mode input resistance||Ohms||2Meg||
|-
|r_in_cm||common mode input resistance||Ohms||2G||
|-
|Avd0||differential mode DC gain||dB||106||
|-
|CMRR||common mode rejection ratio||dB||90||
|-
|r_out||output resistance||Ohms||75||
|-
|c_in||input capacitance||F||1.4p||
|-
|ios||input offset current||A||20n||
|-
|ib||input bias current||A||80n||
|-
|vio||input offset voltage||V||1m||
|-
|slew_pos||positive slew rate||V/s||0.5e6||
|-
|slew_neg||negative slew rate||V/s||0.5e6||
|-
|curr_src_max||maximum output source current||A||25m||
|-
|curr_sink_||maximum output sink current||A25m||
|-
|fp1||dominant pole frequency||Hz||5||
|-
|fp2||second pole frequency||Hz||2Meg||
|-
|fp3||third pole frequency||Hz||20Meg||
|-
|fp4||fourth pole frequency||Hz||100Meg||
|-
|fz||first zero frequency||Hz||5Meg||
|-
|vcc_pos||positive dc voltage source||V||12||
|-
|vcc_neg||negative dc voltage source||V||12||
|-
|}

== Optocoupler ==

[[File:GK115.png]]

This is a five-pin parameterized optocoupler device. Its model consists of an ideal diode device in series with an Ohmic resistance connected between the Anode (A) and Cathode (K) pins together with a bipolar junction transistor device with three accessible pins, Collector (C), Base (B) and Emitter (E). A current-controlled current source is connected between base and collector of the BJT, whose current is controlled by the current passing through the diode. The proportionality constant is twice the specified value of the current transfer ratio (ctr) parameter.

You can change or enhance the models of the diode and BJT by adding more parameters. To do so, you have to open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|ctr||current transfer ratio||-||0.5||
|-
|rd||diode ohmic resistance||Ohms||0.1||
|-
|}

== Overtone Crystal ==

[[File:GK79.png]]

This is a 2-pin parameterized overtone crystal device.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|LM||fundamental motional inductance||H||250m||
|-
|CM1||fundamental motional capacitance||F||10f||
|-
|RM1||fundamental motional resistance||Ohms||20||
|-
|RM3||3rd overtone motional resistance||Ohms||50||
|-
|RM5||5th overtone motional resistance||Ohms||100||
|-
|RM7||7th overtone motional resistance||Ohms||150||
|-
|C0||shunt capacitance||F||3p||
|-
|}

== Photodiode ==

[[File:GK113.png]]

This is a 4-pin parameterized photodiode device. A pair of pins, Anode (A) and Cathode (K), represent the physical terminals of the photodiode. The photodiode model connected between the anode and cathode pins consists of the parallel connection of an ideal diode, a dark current source, a noise current source, a current-controlled current source, a diode capacitance, a shunt resistance altogether with a series resistance.

Another pair of pins IS+ and IS- act as an ammeter that must be inserted in a control circuit. The current passing through this ammeter controls the current of the photodiode. The default proportionality constant is unity. The controlling current is typically a function of light intensity incident on the surface of the photodiode.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|id||dark current||A||1n||
|-
|ir||noise current||A||1p||
|-
|cd||diode capacitance||F||10p||
|-
|rs||series resistance||Ohms||1m||
|-
|rp||parallel resistance||Ohms||1Meg||
|-
|}

==Piecewise Linear (PWL) Controlled Source==

[[File:GL49.png]]

The Piecewise Linear (PWL) Controlled Source is a single-input and single-output function generator whose output is not necessarily
linear for all input values. Instead, it follows an I/O relationship that is specified by the x_array and y_array coordinates. The x_array and y_array values represent vectors of coordinate points on the x and y axes, respectively. The x_array values are progressively increasing input coordinate points, and the associated y_array values represent the outputs at those points. There may be as few as two pairs specified, or as many as memory and simulation speed allow.

In order to fully specify outputs for values of Vin outside of the bounds of the PWL function, the PWL
controlled source model extends the slope found between the lowest two coordinate pairs and the highest
two coordinate pairs. This has the effect of making the transfer function completely linear for Vin
less than x_array[0] and Vin greater than x_array[n]. It also has the potentially subtle effect of unrealistically
causing an output to reach a very large or small value for large inputs. You should thus keep in mind
that the PWL Source does not inherently provide a limiting capability.

In order to diminish the potential for divergence of simulations when using the PWL block, a form
of smoothing around the x_array and y_array coordinate points is necessary. This is due to the iterative
nature of the simulator and its reliance on smooth first derivatives of transfer functions in order to
arrive at a matrix solution. Consequently, the two parameters "input_domain" and "fraction" are included
to allow you some control over the amount and nature o the smoothing performed.

Fraction is a switch that is either TRUE or FALSE. When TRUE (the default setting), the simulator assumes
that the specified input_domain value is to be interpreted as a fractional figure. Otherwise, it is interpreted
as an absolute value. Thus, if fraction = TRUE and input_domain = 0.10, the simulator assumes that the smoothing
radius about each coordinate point is to be set equal to 10% of the length of either the x_array segment
above each coordinate point, or the x_array segment below each coordinate point. The specific segment
length chosen will be the smallest of these two for each coordinate point.

If fraction = FALSE and input_domain = 0.10, then the simulator will begin smoothing the transfer function at 0.10
volts (or amperes) below each x_array coordinate and will continue the smoothing process for another 0.10
volts (or amperes) above each x_array coordinate point.

Model Identifier: pwl

Netlist Format:

A<device_name> %vd(<in_pin> <in_ref_pin>) %vd(<out_pin> <out_ref_pin>) <model_name>

.model <model_name> pwl x_array = [<value1> <value2> ...] y_array = [<value1>
<value2> ...] {<param1 = value> < param2 = value> ...}

Example:

A1 %vd(2 3) %vd(1 4) pwl
.model pwl pwl x_array = [0 1] y_array = [0 1]

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|x_array||x-element array||V||[0 1]||required
|-
|y_array||y-element array||V||[0 1]||required
|-
|input_domain||input smoothing domain||-||0.01||
|-
|fraction||smoothing %/abs switch||-||True||
|-
|}

== PM Modulated Source ==

[[File:GL25.png]]

This is a voltage source with a single-tone phase modulated waveform. The PM modulation index MDI is defined as the ratio of maximum phase deviation to maximum signal amplitude.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|V0||offset||V||0||
|-
|VA||amplitude||V||1||
|-
|FC||carrier frequency ||Hz||1||required
|-
|MDI||modulation index||-||0||required
|-
|FS||signal frequency ||Hz||1||required
|-
|}

== Potentiometer ==

[[File:GK77.png]]

This is a 3-pin device that models a potentiometer with options for either linear or logarithmic resistance. position = 0 corresponds to the wiper being at the extreme left and position = 1 corresponds to the wiper being at the extreme right. With the default position = 0.5 corresponding to the midpoint, this device functions as a one-half voltage divider.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|position||position of wiper connection||-||0.5||Must be between 0.0 and 1.0.
|-
|log||log-linear switch||-||False||Select False for linear and True for logarithmic.
|-
|r||total resistance||Ohms||0.1u||
|-
|log_multiplier||multiplier constant for log resistance||-||1.0||
|-
|}

== Programmable Unijunction Transistor (PUT)==

[[File:GK112.png]]

This is a 3-pin parameterized Programmable Unijunction Transistor (PUT) device with three pins: Base 1 (B1), Base 2 (B2) and Emitter (E). It is biased with a positive voltage between the two bases. This device has a unique characteristic that when it is triggered, its emitter current increases regeneratively until it is restricted by emitter power supply. It exhibits a negative resistance characteristic and so it can be employed as an oscillator. The device's model involves an NPN BJT and a PNP BJT. The forward beta parameters of the two transistors are set equal to 100 and 1, respectively. To change these values, open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|eta||-||-||0.6||
|-
|rbb||total base-to-base resistance||Ohms||40k||
|-
|rf||forward resistance||Ohms||1Meg||
|-
|rr||reverse resistance||Ohms||1Meg||
|-
|rgk||gate-to-cathode resistance||Ohms||100||
|-
|bvf||breakdown voltage of forward diode||V||100||
|-
|bvr||breakdown voltage of reverse diode||V||100||
|-
|bvgk||breakdown voltage of gate-to-cathode diode||V||5||
|-
|}

==Random Resistor==

[[File:GK93.png]]

The random resistor device models a resistor whose resistance is a random number between 0 and a maximum specified value.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|max_val||maximum resistance value||Ω||1k||
|-
|}

==Real Capacitor==

[[File:GK117.png]]

This is primarily a non-ideal, temperature-dependent capacitor model. You can access it from the Parts Menu as '''User-Defined Capacitor'''. It has two temperature coefficients: first-order TC1 temperature and second-order TC2. The value of the temperature-dependent capacitance is computed using the quadratic equation:

C(T) = C(T0) * [ 1 + TC1 * (T - T0) + TC2 * (T-T0)^2 ]

The device's model includes a series resistance and a series inductance together with the capacitor, all in parallel with a shunt resistance.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|Resr||series resistance||Ω||10||
|-
|Ls||inductance||H||1p||
|-
|C||capacitance||F||1n||
|-
|Rp||parallel resistance||Ω||1G||
|-
|ic||voltage initial condition||V||0||
|-
|temp||operating temperature||deg C||27||
|-
|tc1||first-order temperature coefficient||F/°C||0.1||
|-
|tc2||second-order temperature coefficient||F/°C2||0.01||
|-
|}

==Real Inductor==

[[File:GK118.png]]

This is primarily a non-ideal inductor model. You can access it from the Parts Menu as '''User-Defined Inductor'''. Its series resistor has two temperature coefficients: first-order TC1 temperature and second-order TC2. The value of the temperature-dependent resistance is computed using the quadratic equation:

R(T) = R(T0) * [ 1 + TC1 * (T - T0) + TC2 * (T-T0)^2 ]

The device's model includes a series resistance together with the inductor, and the combination in parallel with a shunt capacitance.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|Rdc||series resistance||Ω||10||
|-
|L||inductance||H||1||
|-
|Cp||capacitance||F||1p||
|-
|ic||current initial condition||A||0||
|-
|temp||operating temperature||deg C||27||
|-
|tc1||first-order temperature coefficient||Ω/°C||0.1||
|-
|tc2||second-order temperature coefficient||Ω/°C2||0.01||
|-
|}

==Real Resistor==

[[File:GK116.png]]

This is primarily a non-ideal, temperature-dependent resistor model. You can access it from the Parts Menu as '''User-Defined Resistor'''. It has two temperature coefficients: first-order TC1 temperature and second-order TC2. The value of the temperature-dependent resistance is computed using the quadratic equation:

R(T) = R(T0) * [ 1 + TC1 * (T - T0) + TC2 * (T-T0)^2 ]

The device's model includes a series inductance together with the resistor.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|R||resistance||Ω||1k||
|-
|Ls||inductance||H||1n||
|-
|temp||operating temperature||deg C||27||
|-
|tc1||first-order temperature coefficient||Ω/°C||0.1||
|-
|tc2||second-order temperature coefficient||Ω/°C2||0.01||
|-
|}

==Resistor==

[[File:GK119.png]]

Resistors are passive devices that dissipate power. Their resistance value varies depending on how much power they can dissipate and is measured
in Ohms. The transient, DC and AC behaviors of a resistor are all described by the same equation:

v = R * i

where v is the voltage across the resistor, i is the current passing through the resistor, and R is the resistance. The value of R must be nonzero.

All resistor names must begin with R.

Netlist Format:

R<device_name> <N+> <N-> <value>

Example:

R1 1 2 1k

[[RF.Spice A/D]] provides three types of resistor: Simple, User-Defined (Real Resistor) and Semiconductor. The resistance of the simple resistor is a single value expressed in Ohms. You can also set the Monte Carlo tolerance for this resistor.

==Schottky Diode==

[[File:GK80.png]]

The Schottky diode has the same model as the generic diode with a nonzero transit time (tt), a nonzero junction capacitance (cjo) and a typically larger saturation current (is), a lower junction potential (vj) and a smaller grading coefficient (m).

==Semiconducting Capacitor==

[[File:GK83.png]]

This is the more general form of the Capacitor model and allows for the calculation of the actual capacitance value from strictly geometric information and the specifications of the process.

General Form:

CXXXXXXX N1 N2 <VALUE> <MNAME> <L=LENGTH> <W=WIDTH> <IC=VAL>

If VALUE is specified, it defines the capacitance. If MNAME is specified, then the capacitance is calculated from the process information in the model MNAME and the given LENGTH and WIDTH. If VALUE is not specified, then MNAME and LENGTH must be specified. If WIDTH is not specified, then it is taken from the default width given in the model. Either VALUE or MNAME, LENGTH, and WIDTH may be specified, but not both sets. The optional initial condition "IC" is the initial voltage across the capacitor for transient simulations.

The capacitance is computed as:

CAP = CJ * (LENGTH - NARROW) * (WIDTH - NARROW)+ 2 * CJSW * (LENGTH + WIDTH - 2NARROW) * CAP

To modify the model parameters, first double click on the capacitor to edit its top-level model parameters. Then choose the button labeled {{key|Edit from Table}} in the process model section. This will open a window in which you can edit CJ, CJSW, NARROW, DEFW, and CAP.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|CJ||junction bottom capacitance||F/m2||-||
|-
|CJSW||junction sidewall capacitance||F/m ||-||
|-
|DEFW||default device width||m||1u||
|-
|NARROW||narrowing due to side etching||m||0||
|-
|CAP||nominal capacitance for Monte Carlo simulation||F||1||
|-
|}

== Semiconductor Resistor ==

[[File:GK82.png]]

This is the more general form of the resistor model and allows for the modeling of temperature effects and for the calculation of the actual resistance value from strictly geometric information and the specifications of the process.

General Form:

RXXXXXXX N1 N2 <VALUE> <MNAME> <L=LENGTH> <W=WIDTH> <TEMP=T>

If VALUE is specified, it overrides the geometric information and defines the resistance. If MNAME is specified, then the resistance may be calculated from the process information in the model MNAME and the given LENGTH and WIDTH. If VALUE is not specified, then MNAME and LENGTH must be specified. If WIDTH is not specified, then it is taken from the default width given in the model. The (optional) TEMP value is the temperature at which this device is to operate, and overrides the temperature specification in the SPICE Options Dialog.

The resistance is computed as:

R(T0) = (RSH) * [(L - NARROW) / (W - NARROW)] * RES

R(T) = R(T0) * [ 1 + TC1 * (T - T0) + TC2 * (T-T0)^2 ]

To modify the model parameters, first double click on the resistor to edit its top-level model parameters. Then choose the button labeled {{key|Edit from Table}} in the process model section. This will open a window in which you can edit TC1, TC2, RSH, RES, etc.

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|TC1||first order temperature coefficient||Ω/°C||-||
|-
|TC2||second order temperature coefficient||Ω/°C2||-||
|-
|RSH||sheet resistance||Ω/sq||-||
|-
|DEFW||default device width||m||1u||
|-
|NARROW||narrowing due to side etching||m||0||
|-
|TNOM||the parameter measurement temperature||deg C ||27||
|-
|RES||resistance multiplier for Monte Carlo simulation||Ohms||1||
|-
|}

== Silicon-Controlled Rectifier (SCR)==

[[File:GK109.png]]

This is a 3-pin parameterized Silicon-Controlled Rectifier (SCR) device with three pins: Anode (A), Cathode (K) and Gate (G). It is a unidirectional device which can conduct current only in one direction. The SCR can be triggered only by a positive current going into its gate. The device's model involves an NPN BJT and a PNP BJT. The forward beta parameters of the two transistors are set equal to 100 and 1, respectively. To changes these values, open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|rf||forward resistance||Ohms||1Meg||
|-
|rr||reverse resistance||Ohms||1Meg||
|-
|rgk||gate-to-cathode resistance||Ohms||100||
|-
|bvf||breakdown voltage of forward diode||V||100||
|-
|bvr||breakdown voltage of reverse diode||V||100||
|-
|bvgk||breakdown voltage of gate-to-cathode diode||V||5||
|-
|}

== SPDT Switch ==

[[File:GK72.png]]

This is a 5-pin device that models a single-pole double-throw switch. The input voltage is transferred to the first output pin if the control voltage is at a high state. Otherwise, its is transferred to the second output pin.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|von||turn-on voltage||V||3.3||
|-
|voff||turn-off voltage||V||0.3||
|-
|vt||threshold voltage||V||1.0||
|-
|ron||on resistance||Ohms||1.0||
|-
|roff||off resistance||Ohms||1Gig||
|-
|}

== SPST Switch ==

[[File:GK71.png]]

This is a 4-pin device that models a single-pole single-throw switch. It is virtually equivalent of the standard voltage-controlled switch.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|von||turn-on voltage||V||3.3||
|-
|voff||turn-off voltage||V||0.3||
|-
|vt||threshold voltage||V||1.0||
|-
|ron||on resistance||Ohms||1.0||
|-
|roff||off resistance||Ohms||1Gig||
|-
|}

==Tabulated Conductor==

[[File:GK92.png]]

The tabulated conductor model allows the conductance to be described by a table relating the device's current i(t) to its terminal voltage v(t). In effect, the conductance is defined as G = di(t)/dv(t). The model provides two interpolation options: cubic spline and piecewise linear. You can enter the (v,i) data pairs in the text box provided in the property dialog. Or you can import the data from a text file.

==Tabulated Resistor==

[[File:GK91.png]]

The tabulated resistor model allows the resistance to be described by a table relating the device's terminal voltage v(t) to its current i(t). In effect, the resistance is defined as R = dv(t)/di(t). The model provides two interpolation options: cubic spline and piecewise linear. You can enter the (i,v) data pairs in the text box provided in the property dialog. Or you can import the data from a text file.

==Tapped Inductor==

[[File:GK101.png]]

This 3-pin device models a tapped inductor with mutual coupling effect.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|Lt||total inductance||H||1m||
|-
|ratio||ratio of number of turns between positive terminal and tap to total number of turns||-||0.5||
|-
|k||coefficient of coupling||-||1.0||
|-
|}

== Temperature-Dependent Current Source ==

[[File:GL14.png]]

This is a current source whose current is an arbitrary function of the circuit temperature. You have to open the subcircuit model dialog by clicking the {{key|Edit Model...}} button and edit its text. Enter any mathematical expression in the variable "v(T)" standing for temperature. Note that the circuit temperature is set and controlled by the parameter "temp" in the Miscellaneous tab of the SPICE [[Simulation Options]] dialog.

Examples:

* v(T) is equivalent to f(T) = T.
* 1 + 0.1*(v(t))^2 is equivalent to f(T) = 1 + 0.1T.

Parameters:

None

== Temperature-Dependent Voltage Source ==

[[File:GL13.png]]

This is a voltage source whose voltage is an arbitrary function of the circuit temperature. You have to open the subcircuit model dialog by clicking the {{key|Edit Model...}} button and edit its text. Enter any mathematical expression in the variable "v(T)" standing for temperature. Note that the circuit temperature is set and controlled by the parameter "temp" in the Miscellaneous tab of the SPICE [[Simulation Options]] dialog.

Examples:

* v(T) is equivalent to f(T) = T.
* 1 + 0.1*(v(t))^2 is equivalent to f(T) = 1 + 0.1T.

Parameters:

None

==Thermometer==
[[File:G115.png]]

The Thermometer is a two-pin device that measures the operating temperature of a circuit. The voltage across the device pins is equal to SPICE's operating temperature in degrees centigrade. The output voltage of the Thermometer can be used in conjunction with linear or nonlinear dependent sources to model temperature-dependent quantities.

Model Identifier: thermo

Parameters:

This device has no parameters.

== Triac Thyristor ==

[[File:GK110.png]]

This is a 3-pin bidirectional thyristor device that conducts current in either direction when triggered. A thyristor is analogous to a relay in that a small voltage and current can control a much larger voltage and current. The triac has two anode pins termed Main Terminal 1 (MT1) and Main Terminal 2 (MT2) and a Gate (G) pin. In order to create a triggering current for a triac, either a positive or negative voltage can be applied to the gate. Once triggered, the thyristor continues to conduct, even if the gate current ceases, until the main current drops below a certain level called the holding current. The device's model involves two NPN BJT transistors and two PNP BJT transistors. The forward beta parameters of the NPN and PNP transistors are set equal to 20 and 5, respectively. To changes these values, open the subcircuit model dialog by clicking the {{key|View Subcircuit}} button and edit its text.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|rf||forward resistance||Ohms||1Meg||
|-
|bvf||breakdown voltage of forward diodes||V||100||
|-
|rh||resistance controlling reverse holding current||Ohms||100||
|-
|rgp||resistance controlling forward holding current and trigger current||Ohms||50||
|-
|}

==Uniform RC Transmission Line==

[[File:G23.png]]

The standard parameters are L, and N. They are described below:

Two of the nodes are the element nodes connected by the RC line. The third is the node to which the capacitances
are connected. L is the length of the RC line in meters. N is the number of lumped segments to use in
modeling the RC line.

This device is derived from a model proposed by Gertzberrg. It expands the URC line into a network of
lumped RC segments with internally generated nodes. These segments increase toward the middle of the
URC line in a geometric progression with K as the proportionality constant.

The URC line is made up entirely of resistor and capacitor segments, unless the ISPERL parameter has a
non-zero value. In this case, capacitors are replaced by reverse biased diodes with an equivalent zero-bias
junction capacitance, a saturation current of ISPERL amps per meter of transmission line, and optional
series resistance of RSPERL ohms per meter.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!EXAMPLE
|-
|K||propagation constant||-||2||1.2
|-
|FMAX||maximum frequency of interest||Hz||1.0G||6.5Meg
|-
|RPERL||resistance per unit length||Ohm /m||1000||10
|-
|CPERL||capacitance per unit length||F/m||1.0e-15||1pF
|-
|ISPERL||saturation current per unit length||A/m||0||-
|-
|RSPERL||diode resistance per unit length||Ohm/m||0||-
|-
|}

==Varactor Diode==

[[File:GK81.png]]

A varactor diode is a combination of the generic diode with additional package inductance, package capacitance and a series resistance. This diode device has a typically large value of junction capacitance (cjo).

Parameters (in addition to standard diode parameters):

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|q||quality factor||-||5000||
|-
|f0||frequency of Q-factor specification||Hz||50Meg||
|-
|ls||package inductance||H||0.5n||
|-
|cp||package capacitance ||F||0.05p||
|-
|}

==Voltage-Controlled Capacitor==

[[File:GK85.png]]

This 3-pin device models a voltage-controlled two-terminal capacitor whose capacitance is linearly proportional to a control voltage that is applied to a third (CTRL) pin. The proportionality constant is a conversion factor which you need to specify in F/V.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|K_C||conversion factor||F/V||1.0||
|-
|}

==Voltage-Controlled Inductor==

[[File:GK86.png]]

This 3-pin device models a voltage-controlled two-terminal inductor whose inductance is linearly proportional to a control voltage that is applied to a third (CTRL) pin. The proportionality constant is a conversion factor which you need to specify in H/V.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|K_L||conversion factor||H/V||1.0||
|-
|}

==Voltage-Controlled Resistor==

[[File:GK84.png]]

This 3-pin device models a voltage-controlled two-terminal resistor whose resistance is linearly proportional to a control voltage that is applied to a third (CTRL) pin. The proportionality constant is a conversion factor which you need to specify in Ω/V.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|K_r||conversion factor||Ω/V||1.0||
|-
|}

==Voltage-Controlled Switch==

[[File:G19.png]]

Switches are devices that exhibit high resistance when open (OFF state) and low resistance when closed (ON state). The switch model allows an almost ideal switch to be specified. With careful selection of the on and off resistances, they can effectively represent zero and infinite resistances in comparison to other circuit elements, while sustaining the model condition of a positive, finite value.

There are two versions of Voltage-Controlled Switch: two-terminal and four-terminal. For the two-terminal device, you must specify the name of the controlling Voltmeter or controlling voltage nodes, as well as the turn-on and turn-off voltages in Volts and on and off resistance values in Ohms. The four-terminal device already provides nodes for a controlling voltmeter, and you just specify the rest of [[parameters]]. When the voltage across the switch or controlling device is greater or equal to the turn-on current, the switch closes. When the voltage across the switch or controlling device is less than or equal to the turn off current, the switch opens.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNITS!!DEFAULT!!NOTES
|-
|V_ON||turn-on voltage||V||0.5||
|-
|V_OFF||turn-off voltage||V||0.0||
|-
|RON||on resistance||Ohms||1.0||
|-
|ROFF||off resistance||Ohms||1G||
|-
|}

==Voltage Noise Source==

[[File:GL15.png]]

This is a voltage noise generator characterized by a spectral density and corner frequency. You have to click the {{key|Edit Model...}} button to access the parameters of this device.

Parameters:

{| class="wikitable"
|-
!NAME!!PARAMETER!!UNIT!!DEFAULT!!NOTES
|-
|En||noise voltage||V/√Hz||1n||required
|-
|freq||noise corner frequency||Hz||100||required
|-
|}

==Voltage Source==

[[File:G17A.png]]

A voltage source has a DC value, a transient behavior, an AC behavior, and distortion parameters. The transient type, AC parameters, and distortion parameters are defined on the first tab of the source's property dialog. The transient expression can be a pulse, sinusoid, exponential, or piecewise linear. The DC value of a voltage source is its initial transient value. For a source with a sinusoidal transient behavior, for example, the DC value will be equal to its transient offset voltage. The AC parameters are magnitude and phase. These are used during the AC Frequency Sweep analysis. The distortion parameters, two sets of magnitude and phase, are used during the distortion analysis. The AC and distortion parameters are defined on the second tab of the source's property dialog.

==XSpice Devices and their models==

XSpice devices have the following form:

A<device_name> <node1> <node2> ... <model_name>


e.g., A2 1 2 transfer_function

Note that XSpice devices must start with the "A" designation, much as a resistor starts with
an "R". Some devices will have grouped (or vector) pins and are designated by being placed
inside square brackets. In the example shown below, the 1 and 2 pins are grouped. Pin 3 is not. 


A1 [1 2] 3 summer 

Some models will have voltage differential pairs of pins and will be denoted by a %vd( ). In the following
example pins 1 and 4 are differential pairs, as well as pins 2 and 3. Differential pairs must go between
parentheses ().


A1 %vd(1 4) %vd(2 3) triangle 

Refer to individual devices for more information.

Each XSpice device will also have a model associated with it. Each model will have the following form:


.model <model_name> <model_identifier> {<pname1 = pval1>} {<pname2 = pval2>}
...


e.g., .model transfer_function s_xfer in_offset = 0.0 gain = 1.0

Model_name refers to the name given in the device line. Model_identifier is an internal designation and
must be of an existing designation Refer to each device's example for the correct designation.

Parameter values are optional. If they aren't specified, then the default will be used. Some devices
have parameters that require a value and must be specified. Refer to individual devices for any required parameters.

==Zener Diode==

[[File:G10.png]]

The Zener Diode models the DC characteristics of most zeners. Since most data sheets for zener diodes do
not give detailed characteristics in the forward region, only a single point defines the forward characteristicThe
saturation current refers to the relatively constant reverse current that is produced when the voltage
across the zener is negative, but breakdown has not been reached. The reverse leakage current determines
the slight increase in reverse current as the voltage across the zener becomes more negative. It is modeled
as a resistance parallel to the zener with value v_breakdown / i_rev.

Note that the limt_switch parameter engages an internal limiting function for the zener. This can, in
some cases, prevent the simulator from converging to an unrealistic solution if the voltage across or
current into the device is excessive. If use of this feature fails to yield acceptable results, the convlimit
option should be tried (add the following statement to the SPICE input deck: .options convlimit)

Model Identifier: zener

Netlist Format:

A<device_name> <z_pin> <z_out_pin> <model_name>

.model <model_name> zener v_breakdown = 1 {<param1 = value> < param2 = value> ...}

Example:

A1 1 2 zener

.model zener zener v_breakdown = 1

Parameters:

{| class="wikitable"
|-
!Name!!Description!!Default!!Notes
|-
|v_breakdown||breakdown voltage||1||required
|-
|i_breakdown||breakdown current||2.0e-2||
|-
|i_sat||saturation current||1.0e-12||
|-
|N_forward||forward emission coefficient||1.0||
|-
|limit_switch||switch for on-board limiting (convergence aid)||False||
|-
|}

 
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RF.Spice A/D Glossary

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Asabet:

RF.Spice A/D Glossary

2024-10-07T14:57:17Z

Asabet: Created page with "==4-Bit ADC Bridge== File:GK44.png This 8-pin device is simply a bundle of 4 1-bit ADC bridges. Each analog input pin has a corresponding digital output pin. Paramete..."

RF.Spice A/D

2024-10-06T21:00:11Z

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[[File:rfspice_banner.png|right|640px]]
[[File:b2spice_Banner.png|right|640px]]
VISUAL SOFTWARE ENVIRONMENT FOR 
      ANALOG, DIGITAL, RF & MIXED-SIGNAL CIRCUIT & SYSTEM SIMULATION

'''Welcome to [[RF.Spice A/D]] Wiki!'''

== [[RF.Spice A/D]] Manual ==

[[image:RFSpice-ico.png | link=[[RF.Spice A/D]]]] [[RF.Spice A/D: Getting Started]]

* [[Navigating the Visual Interface: Workshop & Toolbox]]
* [[List of RF.Spice A/D Toolbars, Windows & Menus]]
* [[Working with Schematic Editor]]
* [[An Overview of Analog and Mixed-Mode Circuit Simulation]]
* [[Analyzing Circuits Using Predefined Tests]]
* [[Visualizing Simulation Data Using Graphs and Tables]]
* [[Running Parametric Sweeps and Monte Carlo Tests]]
* [[Performing Live Simulations with Circuit Animation or Virtual Instruments]]
* [[An Overview of Digital Circuit Simulation]]
* [[An Overview of RF Circuit Simulation]]
* [[An Overview of System-Level Macromodeling Using Virtual Blocks]]
* [[Working with the Parts Database & Device Manager]]
* [[Creating New Devices and Models | Using Device Manager to Create New Devices and Models]]
* [[Creating New Symbols Using Symbol Editor]]
* [[Glossary of Generic Analog & Mixed-Mode Devices & Sources]]
* [[Glossary of Generic Digital Devices]]
* [[Digital Parts List]]
* [[Glossary of Generic RF Devices & Physical Transmission Lines]]
* [[Glossary of Black-Box Virtual Blocks]]
* [[List of RF.Spice A/D Keyboard Shortcuts]]
* [[RF.Spice A/D Glossary]]

Please note that B2.Spice A/D users, who have the "Lite Edition" of [[RF.Spice A/D]], cannot run the RF and some system-level tutorial lessons.

== Basic Analog & Digital Tutorial Lessons ==

* [[Basic Tutorial Lesson 1: A Simple Voltage Divider Circuit]]
* [[Basic Tutorial Lesson 2: Time and Frequency Domain Analysis of an RLC Filter]]
* [[Basic Tutorial Lesson 3: Analyzing a Basic Bipolar Junction Transistor Circuit]]
* [[Basic Tutorial Lesson 4: Analyzing CMOS Logic Circuits Using MOSFET Devices]]
* [[Basic Tutorial Lesson 5: Designing Basic Amplifier Circuits Using Op-Amp Devices]]
* [[Basic Tutorial Lesson 6: Exploring Simple Rectifier Circuits Using Ideal Transformers]]
* [[Basic Tutorial Lesson 7: Analyzing the Frequency Response of Multistage BJT Amplifiers]]
* [[Basic Tutorial Lesson 8: Examining Basic Logic Gates]]
* [[Basic Tutorial Lesson 9: Analyzing a Sequential Logic Circuit - The SR Latch]]
* [[Basic Tutorial Lesson 10: Building a Shift Register Using D Flip-Flops]]
* [[Basic Tutorial Lesson 11: Building a Binary Counter Using JK Flip-Flops]]
* [[Basic Tutorial Lesson 12: Analyzing Basic Mixed-Mode Circuits with Logic Gates]]
* [[Basic Tutorial Lesson 13: Creating a New Part from Your Analog Circuit]]
* [[Basic Tutorial Lesson 14: Creating a Reusable Parameterized Subcircuit Device]]

== Advanced Analog, Digital & Mixed-Signal Tutorial Lessons ==

* [[Advanced Tutorial Lesson 1: Exploring an Integrated Circuit Voltage Comparator]]
* [[Advanced Tutorial Lesson 2: Designing Active Sallen-Key Filters]]
* [[Advanced Tutorial Lesson 3: Investigating Audio Power Amplifiers]]
* [[Advanced Tutorial Lesson 4: Designing Low & High Frequency Oscillator Circuits]]
* [[Advanced Tutorial Lesson 5: Analyzing a Balanced BJT Mixer]]
* [[Advanced Tutorial Lesson 6: Realizing Analog Filters With Arbitrary Transfer Functions]]
* [[Advanced Tutorial Lesson 7: Building a Ripple-Carry Adder Using Reusable Digital Adder Devices]]
* [[Advanced Tutorial Lesson 8: Designing 8-bit Hexadecimal Adders With Digital Data Buses]]
* [[Advanced Tutorial Lesson 9: Designing D/A Converters]]
* [[Advanced Tutorial Lesson 10: Designing a Digital Ramp Generator]]
* [[Advanced Tutorial Lesson 11: Designing Sample-And-Hold Circuits]]
* [[Advanced Tutorial Lesson 12: Exploring a 3-Bit A/D Converter Circuit]]
* [[Advanced Tutorial Lesson 13: Exploring Digital Filters]]
* [[Advanced Tutorial Lesson 14: Fourier Analysis of Discrete-Time Sampled Signals]]

== RF Tutorial Lessons ==

* [[RF Tutorial Lesson 1: AC Analysis of a Simple Transmission Line Circuit]]
* [[RF Tutorial Lesson 2: Transient Analysis of a Simple Transmission Line Circuit]]
* [[RF Tutorial Lesson 3: Network Analysis of a Simple Transmission Line Circuit & the Smith Chart]]
* [[RF Tutorial Lesson 4: Analyzing Microstrip Lines & Discontinuities]]
* [[RF Tutorial Lesson 5: Designing Lumped and Distributed Microstrip Lowpass Filters]]
* [[RF Tutorial Lesson 6: Examining Coupled Transmission Lines]]
* [[RF Tutorial Lesson 7: Designing Distributed Bandpass Filters Using Coupled Transmission Line Segments]]
* [[RF Tutorial Lesson 8: Designing an RF Bipolar Junction Transistor Amplifier with Lumped Matching Networks]]
* [[RF Tutorial Lesson 9: Impedance Matching Using Tuning Stubs]]
* [[RF Tutorial Lesson 10: Analyzing a Distributed Amplifier Using an Imported RF BJT Model]]
* [[RF Tutorial Lesson 11: Designing a Microstrip MESFET Amplifier]]
* [[RF Tutorial Lesson 12: Time Domain Simulation of Generic RF Devices]]
* [[RF Tutorial Lesson 13: Investigating RF Transmission of Digital Data]]
* [[RF Tutorial Lesson 14: Analyzing a Communications System Using Virtual Blocks]]
* [[RF Tutorial Lesson 15: Exploring Phase-Locked Loops]]
* [[RF Tutorial Lesson 16: Building Frequency Conversion Mixers With Virtual Blocks]]
* [[RF Tutorial Lesson 17: Simulating a Frequency-Modulated Continuous-Wave (FMCW) Radar System]]

 

<hr>

[[Image:Top_icon.png|48px]] '''[[RF.Spice_A/D#RF.Spice_A.2FD_Manual | Back to the Top of the Page]]'''

[[image:Cube-icon.png | link=EM.Cube]]   '''[[EM.Cube | Visit EM.Cube Wiki Site]]'''

[[image:NeoScan-ico.png | link=NeoScan]]   '''[[NeoScan | Visit NeoScan Wiki Site]]'''

[[Image:Back_icon.png|40px]] '''[[Main_Page | Back to Emagtech Wiki Gateway]]'''

Main Page

2022-11-14T23:47:44Z

Asabet:

'''Welcome to EMAGTECH Wiki Gateway!'''

Introducing 
Unified Modeling, Characterization & Measurement Tools 
For RF Circuits, Systems & Electromagnetic Structures

<table>
<tr>
<td>
{|class="wikitable"
|-
! [https://www.emagtech.com/wiki/index.php?title=EM.Cube EM.Cube]
|-
|[[File:emcubePAGE.png |250px | link=https://www.emagtech.com/wiki/index.php?title=EM.Cube]]
|-
! [[RF.Spice A/D | RF.Spice A/D]] & [[RF.Spice A/D | B2.Spice A/D]]
|-
| [[File:RfspicePAGE New.png |250px | link=RF.Spice A/D | RF.Spice A/D]]
|-
|-
! [[NeoScan | NeoScan]]
|-
| [[File:NeoScan_Product.png |250px | link=NeoScan | NeoScan ]]
|-
|}
</td>
</tr>
</table>

EMAG Technologies Inc. offers three exciting families of software and hardware products for RF, electronics and electrical engineers, including electronic design automation (EDA) tools and RF test and measurement systems. Learn more about each product by clicking on the respective link and access a wealth of documentation, tutorials and videos.

<DynamicArticleList>
title=Most Popular Articles
type=hot
count=8
</DynamicArticleList>

New Tutorials

2022-11-14T23:37:16Z

Asabet:

== EM.Cube Tutorials ==

<table>
<tr>
<td>
{|class="wikitable"
|-
! [[EM.Cube]]
|-
|[[File:emcubePAGE.png |250px | link=EM.Cube]]
|-
! [[RF.Spice A/D | RF.Spice A/D]] & [[RF.Spice A/D | B2.Spice A/D]]
|-
| [[File:RfspicePAGE New.png |250px | link=RF.Spice A/D | RF.Spice A/D]]
|-
|-
! [[NeoScan | NeoScan]]
|-
| [[File:NeoScan_Product.png |250px | link=NeoScan | NeoScan ]]
|-
|}
</td>
</tr>
</table>

Each tutorial lesson listed below walks you through the basic features of one of [[EM.Cube]]'s computational modules:

----------------------------------------------------------------------------------------

[[What%27s_New_in_EM.Cube_R20.1%3F | What's New in EM.Cube 2020?]]

Old [[EM.Tempo]] Tutorial Lessons

* [[EM.Tempo Tutorial Lesson 1: Analyzing A Center-Fed Resonant Dipole Antenna]]
* [[EM.Tempo Tutorial Lesson 2: Analyzing Scattering From A Sphere]]
* [[EM.Tempo Tutorial Lesson 3: Modeling A Probe-Fed Microstrip Patch Antenna]]
* [[EM.Tempo Tutorial Lesson 4: Modeling A Patch Antenna Array]]
* [[EM.Tempo Tutorial Lesson 5: Analyzing A Planar Microstrip Band-Stop Filter]]
* [[EM.Tempo Tutorial Lesson 6: Modeling Rectangular Waveguide Structures]]
* [[EM.Tempo Tutorial Lesson 7: Designing A Pyramidal Horn Antenna]]
* [[EM.Tempo Tutorial Lesson 8: Analyzing A Periodic Frequency Selective Surface]]
* [[EM.Tempo Tutorial Lesson 9: Modeling Coplanar Waveguide Structures And Lumped Devices]]
* [[EM.Tempo Tutorial Lesson 10: Modeling Wave Propagation In Dispersive Media]]
* [[EM.Tempo Tutorial Lesson 11: Simulating A Monopole Antenna Interacting With A Human Head Model]]

Old [[EM.Terrano]] Tutorial Lessons

* [[EM.Terrano Tutorial Lesson 1: Analyzing A Basic Line-Of-Sight Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 2: Examining A Polarimetric Propagation Channel]]
* [[EM.Terrano Tutorial Lesson 3: Analyzing A Multipath Outdoor Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 4: Analyzing Indoor Propagation Inside a Building Model with Penetrable Walls]]
* [[EM.Terrano Tutorial Lesson 5: Simulating A Dense Urban Canyon Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 6: Modeling Irregular Terrain]]
* [[EM.Terrano Tutorial Lesson 7: Parametric Study Of A Realistic Urban Scene]]
* [[EM.Terrano Tutorial Lesson 8: Simulating A Communications Link With Directional Antennas]]
* [[EM.Terrano Tutorial Lesson 9: A SBR Channel Analysis of An Urban Scene]]
* [[EM.Terrano Tutorial Lesson 10: Modeling A Mobile Communications Link]]

Old [[EM.Ferma]] Tutorial Lessons

* [[EM.Ferma Tutorial Lesson 1: Computing The Electric Field & Potential Due To Spherical Charges]]
* [[EM.Ferma Tutorial Lesson 2: Analyzing A Parallel Plate Capacitor]]
* [[EM.Ferma Tutorial Lesson 3: Modeling Objects Immersed In A Uniform Electric Field]]
* [[EM.Ferma Tutorial Lesson 4: Computing The Magnetic Field Of Linear Currents In Free Space & Magnetic Media]]
* [[EM.Ferma Tutorial Lesson 5: Modeling Solenoids & Toroidal Coils]]
* [[EM.Ferma Tutorial Lesson 6: Analyzing Permanent Magnets]]
* [[EM.Ferma Tutorial Lesson 7: Analyzing A Microstrip Transmission Line]]
* [[EM.Ferma Tutorial Lesson 8: Modeling 2D Coplanar Waveguide Structures]]

Old [[EM.Picasso]] Tutorial Lessons

* [[EM.Picasso Tutorial Lesson 1: Analyzing A Microstrip-Fed Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 2: Designing A Patch Antenna With A Recessed Feed]]
* [[EM.Picasso Tutorial Lesson 3: Analyzing A Planar Microstrip Band-Stop Filter]]
* [[EM.Picasso Tutorial Lesson 4: Designing A Circularly Polarized Probe-Fed Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 5: Analyzing Patch Antenna Arrays]]
* [[EM.Picasso Tutorial Lesson 6: Analyzing A Periodic Frequency Selective Surface]]
* [[EM.Picasso Tutorial Lesson 7: Designing A Slot-Coupled Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 8: Analyzing A CPW-Fed Folded Dipole Slot Antenna]]
* [[EM.Picasso Tutorial Lesson 9: Designing a Microstrip Wilkinson Power Divider]]
* [[EM.Picasso Tutorial Lesson 10: Optimizing A Microstrip Patch Antenna Design]]

Old [[EM.Libera]] Tutorial Lessons

* [[EM.Libera Tutorial Lesson 1: Analyzing A Center-Fed Wire Dipole Antenna]]
* [[EM.Libera Tutorial Lesson 2: Designing A Yagi-Uda Dipole Array]]
* [[EM.Libera Tutorial Lesson 3: Computing The Radar Cross Section Of Metallic, Dielectric & Composite Targets]]

Old [[EM.Illumina]] Tutorial Lessons

* [[EM.Illumina Tutorial Lesson 1: Analyzing The Scattering From Metal Targets]]
* [[EM.Illumina Tutorial Lesson 2: Computing The Radar Cross Section Of Corner Reflectors]]
* [[EM.Illumina Tutorial Lesson 3: Computing The Radiation Pattern Of Parabolic Dish Reflectors]]
* [[EM.Illumina Tutorial Lesson 4: Simulating Radiation In The Presence Of Large Metallic Shipboard Platforms]]

These are the new pages added or modified for [[EM.Cube]] Release R17:

[[New PO Theory]]

[[What's New in EM.Cube R19.1]]

[[OLD What's New in EM.Cube R18.1?]]

[[What's New in EM.Cube R20.1?]]

[[Glossary of EM.Cube's Materials & Other Physical Object Types]]

[[Glossary of EM.Cube's Sources & Devices]]

[[EM.Terrano Tutorial Lesson 4: Analyzing Indoor Propagation Inside a Building Model with Penetrable Walls]]

[[EM.Terrano Tutorial Lesson 9: A SBR Channel Analysis of An Urban Scene]]

[[EM.Terrano Tutorial Lesson 10: Modeling A Mobile Communications Link]]

----------------------------------------------------------------------------------------

These are the old [[EM.Cube]] documentation pages:

[[The Old EM.Cube Wiki Start Page]]

[[THE OLD Getting Started with EM.Cube]]

[[THE OLD What's New in EM.Cube 2016?]]

[[THE OLD Defining Simulation Observables & Visualizing Output Data]]

---------------------------------

[[V&V Article 6: Using EM.Cube And NeoScan System Together For Antenna Design]]

[[Installing EM.Cube]]

[[EM.Cube FAQ]]

----------------------------------------------------------------------------------------

These are all old stuff:

[[NeoScan_Complete]]

[[NeoScan Manuals]]

[[NeoScan Manual Part A: Getting Started]]

<table>
<tr>
<td>
{|class="wikitable"
|-
! [[EM.Cube]]
|-
|[[File:emcubePAGE.png |225px | link=EM.Cube]]
|-
|}
</td>
<td>   </td>
<td>
{|class="wikitable"
|-
! [[RF.Spice A/D | RF.Spice A/D]]
|-
| [[File:RfspicePAGE New.png |277px | link=RF.Spice A/D | RF.Spice A/D]]
|-
|}
</td>
<td>   </td>
<td>
{|class="wikitable"
|-
! [[RF.Spice A/D | B2.Spice A/D]]
|-
| [[File:B2spicePAGE.png |226px | link=RF.Spice A/D | B2.Spice A/D]]
|-
|}
</td>
<td>   </td>
<td>
{|class="wikitable"
|-
! [[NeoScan | NeoScan]]
|-
| [[File:NeoScan_Product.png |245px | link=NeoScan | NeoScan ]]
|-
|}
</td>
</tr>
</table>

----

[[Old Gateway]]

[[Old EM.Cube Page]]

[[Old Digital Glossary]]

[[MatchIndexTest]]

----

[[Image:Back_icon.png|40px]] '''[[Main_Page | Back to Emagtech Wiki Gateway]]'''

New Tutorials

2022-11-14T23:35:44Z

Asabet:

New Tutorials

2022-11-14T23:34:10Z

Asabet:

== EM.Cube Tutorials ==

! [[EM.Cube]]
|-
|[[File:emcubePAGE.png |250px | link=EM.Cube]]
|-

----------------------------------------------------------------------------------------

[[What%27s_New_in_EM.Cube_R20.1%3F | What's New in EM.Cube 2020?]]

Old [[EM.Tempo]] Tutorial Lessons

* [[EM.Tempo Tutorial Lesson 1: Analyzing A Center-Fed Resonant Dipole Antenna]]
* [[EM.Tempo Tutorial Lesson 2: Analyzing Scattering From A Sphere]]
* [[EM.Tempo Tutorial Lesson 3: Modeling A Probe-Fed Microstrip Patch Antenna]]
* [[EM.Tempo Tutorial Lesson 4: Modeling A Patch Antenna Array]]
* [[EM.Tempo Tutorial Lesson 5: Analyzing A Planar Microstrip Band-Stop Filter]]
* [[EM.Tempo Tutorial Lesson 6: Modeling Rectangular Waveguide Structures]]
* [[EM.Tempo Tutorial Lesson 7: Designing A Pyramidal Horn Antenna]]
* [[EM.Tempo Tutorial Lesson 8: Analyzing A Periodic Frequency Selective Surface]]
* [[EM.Tempo Tutorial Lesson 9: Modeling Coplanar Waveguide Structures And Lumped Devices]]
* [[EM.Tempo Tutorial Lesson 10: Modeling Wave Propagation In Dispersive Media]]
* [[EM.Tempo Tutorial Lesson 11: Simulating A Monopole Antenna Interacting With A Human Head Model]]

Old [[EM.Terrano]] Tutorial Lessons

* [[EM.Terrano Tutorial Lesson 1: Analyzing A Basic Line-Of-Sight Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 2: Examining A Polarimetric Propagation Channel]]
* [[EM.Terrano Tutorial Lesson 3: Analyzing A Multipath Outdoor Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 4: Analyzing Indoor Propagation Inside a Building Model with Penetrable Walls]]
* [[EM.Terrano Tutorial Lesson 5: Simulating A Dense Urban Canyon Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 6: Modeling Irregular Terrain]]
* [[EM.Terrano Tutorial Lesson 7: Parametric Study Of A Realistic Urban Scene]]
* [[EM.Terrano Tutorial Lesson 8: Simulating A Communications Link With Directional Antennas]]
* [[EM.Terrano Tutorial Lesson 9: A SBR Channel Analysis of An Urban Scene]]
* [[EM.Terrano Tutorial Lesson 10: Modeling A Mobile Communications Link]]

Old [[EM.Ferma]] Tutorial Lessons

* [[EM.Ferma Tutorial Lesson 1: Computing The Electric Field & Potential Due To Spherical Charges]]
* [[EM.Ferma Tutorial Lesson 2: Analyzing A Parallel Plate Capacitor]]
* [[EM.Ferma Tutorial Lesson 3: Modeling Objects Immersed In A Uniform Electric Field]]
* [[EM.Ferma Tutorial Lesson 4: Computing The Magnetic Field Of Linear Currents In Free Space & Magnetic Media]]
* [[EM.Ferma Tutorial Lesson 5: Modeling Solenoids & Toroidal Coils]]
* [[EM.Ferma Tutorial Lesson 6: Analyzing Permanent Magnets]]
* [[EM.Ferma Tutorial Lesson 7: Analyzing A Microstrip Transmission Line]]
* [[EM.Ferma Tutorial Lesson 8: Modeling 2D Coplanar Waveguide Structures]]

Old [[EM.Picasso]] Tutorial Lessons

* [[EM.Picasso Tutorial Lesson 1: Analyzing A Microstrip-Fed Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 2: Designing A Patch Antenna With A Recessed Feed]]
* [[EM.Picasso Tutorial Lesson 3: Analyzing A Planar Microstrip Band-Stop Filter]]
* [[EM.Picasso Tutorial Lesson 4: Designing A Circularly Polarized Probe-Fed Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 5: Analyzing Patch Antenna Arrays]]
* [[EM.Picasso Tutorial Lesson 6: Analyzing A Periodic Frequency Selective Surface]]
* [[EM.Picasso Tutorial Lesson 7: Designing A Slot-Coupled Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 8: Analyzing A CPW-Fed Folded Dipole Slot Antenna]]
* [[EM.Picasso Tutorial Lesson 9: Designing a Microstrip Wilkinson Power Divider]]
* [[EM.Picasso Tutorial Lesson 10: Optimizing A Microstrip Patch Antenna Design]]

Old [[EM.Libera]] Tutorial Lessons

* [[EM.Libera Tutorial Lesson 1: Analyzing A Center-Fed Wire Dipole Antenna]]
* [[EM.Libera Tutorial Lesson 2: Designing A Yagi-Uda Dipole Array]]
* [[EM.Libera Tutorial Lesson 3: Computing The Radar Cross Section Of Metallic, Dielectric & Composite Targets]]

Old [[EM.Illumina]] Tutorial Lessons

* [[EM.Illumina Tutorial Lesson 1: Analyzing The Scattering From Metal Targets]]
* [[EM.Illumina Tutorial Lesson 2: Computing The Radar Cross Section Of Corner Reflectors]]
* [[EM.Illumina Tutorial Lesson 3: Computing The Radiation Pattern Of Parabolic Dish Reflectors]]
* [[EM.Illumina Tutorial Lesson 4: Simulating Radiation In The Presence Of Large Metallic Shipboard Platforms]]

These are the new pages added or modified for [[EM.Cube]] Release R17:

[[New PO Theory]]

[[What's New in EM.Cube R19.1]]

[[OLD What's New in EM.Cube R18.1?]]

[[What's New in EM.Cube R20.1?]]

[[Glossary of EM.Cube's Materials & Other Physical Object Types]]

[[Glossary of EM.Cube's Sources & Devices]]

[[EM.Terrano Tutorial Lesson 4: Analyzing Indoor Propagation Inside a Building Model with Penetrable Walls]]

[[EM.Terrano Tutorial Lesson 9: A SBR Channel Analysis of An Urban Scene]]

[[EM.Terrano Tutorial Lesson 10: Modeling A Mobile Communications Link]]

----------------------------------------------------------------------------------------

These are the old [[EM.Cube]] documentation pages:

[[The Old EM.Cube Wiki Start Page]]

[[THE OLD Getting Started with EM.Cube]]

[[THE OLD What's New in EM.Cube 2016?]]

[[THE OLD Defining Simulation Observables & Visualizing Output Data]]

---------------------------------

[[V&V Article 6: Using EM.Cube And NeoScan System Together For Antenna Design]]

[[Installing EM.Cube]]

[[EM.Cube FAQ]]

----------------------------------------------------------------------------------------

These are all old stuff:

[[NeoScan_Complete]]

[[NeoScan Manuals]]

[[NeoScan Manual Part A: Getting Started]]

<table>
<tr>
<td>
{|class="wikitable"
|-
! [[EM.Cube]]
|-
|[[File:emcubePAGE.png |225px | link=EM.Cube]]
|-
|}
</td>
<td>   </td>
<td>
{|class="wikitable"
|-
! [[RF.Spice A/D | RF.Spice A/D]]
|-
| [[File:RfspicePAGE New.png |277px | link=RF.Spice A/D | RF.Spice A/D]]
|-
|}
</td>
<td>   </td>
<td>
{|class="wikitable"
|-
! [[RF.Spice A/D | B2.Spice A/D]]
|-
| [[File:B2spicePAGE.png |226px | link=RF.Spice A/D | B2.Spice A/D]]
|-
|}
</td>
<td>   </td>
<td>
{|class="wikitable"
|-
! [[NeoScan | NeoScan]]
|-
| [[File:NeoScan_Product.png |245px | link=NeoScan | NeoScan ]]
|-
|}
</td>
</tr>
</table>

----

[[Old Gateway]]

[[Old EM.Cube Page]]

[[Old Digital Glossary]]

[[MatchIndexTest]]

----

[[Image:Back_icon.png|40px]] '''[[Main_Page | Back to Emagtech Wiki Gateway]]'''

New Tutorials

2022-11-14T23:33:46Z

Asabet:

New Tutorials

2022-11-14T23:31:30Z

Asabet:

== EM.Cube Tutorials ==

[[EM.Cube]]

Each tutorial lesson listed below walks you through the basic features of one of [[EM.Cube]]'s computational modules:

----------------------------------------------------------------------------------------

[[What%27s_New_in_EM.Cube_R20.1%3F | What's New in EM.Cube 2020?]]

Old [[EM.Tempo]] Tutorial Lessons

* [[EM.Tempo Tutorial Lesson 1: Analyzing A Center-Fed Resonant Dipole Antenna]]
* [[EM.Tempo Tutorial Lesson 2: Analyzing Scattering From A Sphere]]
* [[EM.Tempo Tutorial Lesson 3: Modeling A Probe-Fed Microstrip Patch Antenna]]
* [[EM.Tempo Tutorial Lesson 4: Modeling A Patch Antenna Array]]
* [[EM.Tempo Tutorial Lesson 5: Analyzing A Planar Microstrip Band-Stop Filter]]
* [[EM.Tempo Tutorial Lesson 6: Modeling Rectangular Waveguide Structures]]
* [[EM.Tempo Tutorial Lesson 7: Designing A Pyramidal Horn Antenna]]
* [[EM.Tempo Tutorial Lesson 8: Analyzing A Periodic Frequency Selective Surface]]
* [[EM.Tempo Tutorial Lesson 9: Modeling Coplanar Waveguide Structures And Lumped Devices]]
* [[EM.Tempo Tutorial Lesson 10: Modeling Wave Propagation In Dispersive Media]]
* [[EM.Tempo Tutorial Lesson 11: Simulating A Monopole Antenna Interacting With A Human Head Model]]

Old [[EM.Terrano]] Tutorial Lessons

* [[EM.Terrano Tutorial Lesson 1: Analyzing A Basic Line-Of-Sight Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 2: Examining A Polarimetric Propagation Channel]]
* [[EM.Terrano Tutorial Lesson 3: Analyzing A Multipath Outdoor Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 4: Analyzing Indoor Propagation Inside a Building Model with Penetrable Walls]]
* [[EM.Terrano Tutorial Lesson 5: Simulating A Dense Urban Canyon Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 6: Modeling Irregular Terrain]]
* [[EM.Terrano Tutorial Lesson 7: Parametric Study Of A Realistic Urban Scene]]
* [[EM.Terrano Tutorial Lesson 8: Simulating A Communications Link With Directional Antennas]]
* [[EM.Terrano Tutorial Lesson 9: A SBR Channel Analysis of An Urban Scene]]
* [[EM.Terrano Tutorial Lesson 10: Modeling A Mobile Communications Link]]

Old [[EM.Ferma]] Tutorial Lessons

* [[EM.Ferma Tutorial Lesson 1: Computing The Electric Field & Potential Due To Spherical Charges]]
* [[EM.Ferma Tutorial Lesson 2: Analyzing A Parallel Plate Capacitor]]
* [[EM.Ferma Tutorial Lesson 3: Modeling Objects Immersed In A Uniform Electric Field]]
* [[EM.Ferma Tutorial Lesson 4: Computing The Magnetic Field Of Linear Currents In Free Space & Magnetic Media]]
* [[EM.Ferma Tutorial Lesson 5: Modeling Solenoids & Toroidal Coils]]
* [[EM.Ferma Tutorial Lesson 6: Analyzing Permanent Magnets]]
* [[EM.Ferma Tutorial Lesson 7: Analyzing A Microstrip Transmission Line]]
* [[EM.Ferma Tutorial Lesson 8: Modeling 2D Coplanar Waveguide Structures]]

Old [[EM.Picasso]] Tutorial Lessons

* [[EM.Picasso Tutorial Lesson 1: Analyzing A Microstrip-Fed Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 2: Designing A Patch Antenna With A Recessed Feed]]
* [[EM.Picasso Tutorial Lesson 3: Analyzing A Planar Microstrip Band-Stop Filter]]
* [[EM.Picasso Tutorial Lesson 4: Designing A Circularly Polarized Probe-Fed Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 5: Analyzing Patch Antenna Arrays]]
* [[EM.Picasso Tutorial Lesson 6: Analyzing A Periodic Frequency Selective Surface]]
* [[EM.Picasso Tutorial Lesson 7: Designing A Slot-Coupled Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 8: Analyzing A CPW-Fed Folded Dipole Slot Antenna]]
* [[EM.Picasso Tutorial Lesson 9: Designing a Microstrip Wilkinson Power Divider]]
* [[EM.Picasso Tutorial Lesson 10: Optimizing A Microstrip Patch Antenna Design]]

Old [[EM.Libera]] Tutorial Lessons

* [[EM.Libera Tutorial Lesson 1: Analyzing A Center-Fed Wire Dipole Antenna]]
* [[EM.Libera Tutorial Lesson 2: Designing A Yagi-Uda Dipole Array]]
* [[EM.Libera Tutorial Lesson 3: Computing The Radar Cross Section Of Metallic, Dielectric & Composite Targets]]

Old [[EM.Illumina]] Tutorial Lessons

* [[EM.Illumina Tutorial Lesson 1: Analyzing The Scattering From Metal Targets]]
* [[EM.Illumina Tutorial Lesson 2: Computing The Radar Cross Section Of Corner Reflectors]]
* [[EM.Illumina Tutorial Lesson 3: Computing The Radiation Pattern Of Parabolic Dish Reflectors]]
* [[EM.Illumina Tutorial Lesson 4: Simulating Radiation In The Presence Of Large Metallic Shipboard Platforms]]

These are the new pages added or modified for [[EM.Cube]] Release R17:

[[New PO Theory]]

[[What's New in EM.Cube R19.1]]

[[OLD What's New in EM.Cube R18.1?]]

[[What's New in EM.Cube R20.1?]]

[[Glossary of EM.Cube's Materials & Other Physical Object Types]]

[[Glossary of EM.Cube's Sources & Devices]]

[[EM.Terrano Tutorial Lesson 4: Analyzing Indoor Propagation Inside a Building Model with Penetrable Walls]]

[[EM.Terrano Tutorial Lesson 9: A SBR Channel Analysis of An Urban Scene]]

[[EM.Terrano Tutorial Lesson 10: Modeling A Mobile Communications Link]]

----------------------------------------------------------------------------------------

These are the old [[EM.Cube]] documentation pages:

[[The Old EM.Cube Wiki Start Page]]

[[THE OLD Getting Started with EM.Cube]]

[[THE OLD What's New in EM.Cube 2016?]]

[[THE OLD Defining Simulation Observables & Visualizing Output Data]]

---------------------------------

[[V&V Article 6: Using EM.Cube And NeoScan System Together For Antenna Design]]

[[Installing EM.Cube]]

[[EM.Cube FAQ]]

----------------------------------------------------------------------------------------

These are all old stuff:

[[NeoScan_Complete]]

[[NeoScan Manuals]]

[[NeoScan Manual Part A: Getting Started]]

<table>
<tr>
<td>
{|class="wikitable"
|-
! [[EM.Cube]]
|-
|[[File:emcubePAGE.png |225px | link=EM.Cube]]
|-
|}
</td>
<td>   </td>
<td>
{|class="wikitable"
|-
! [[RF.Spice A/D | RF.Spice A/D]]
|-
| [[File:RfspicePAGE New.png |277px | link=RF.Spice A/D | RF.Spice A/D]]
|-
|}
</td>
<td>   </td>
<td>
{|class="wikitable"
|-
! [[RF.Spice A/D | B2.Spice A/D]]
|-
| [[File:B2spicePAGE.png |226px | link=RF.Spice A/D | B2.Spice A/D]]
|-
|}
</td>
<td>   </td>
<td>
{|class="wikitable"
|-
! [[NeoScan | NeoScan]]
|-
| [[File:NeoScan_Product.png |245px | link=NeoScan | NeoScan ]]
|-
|}
</td>
</tr>
</table>

----

[[Old Gateway]]

[[Old EM.Cube Page]]

[[Old Digital Glossary]]

[[MatchIndexTest]]

----

[[Image:Back_icon.png|40px]] '''[[Main_Page | Back to Emagtech Wiki Gateway]]'''

New Tutorials

2022-11-14T23:29:43Z

Asabet:

== EM.Cube Tutorials ==

'''Welcome to EMAGTECH Wiki Gateway!'''

Introducing 
Unified Modeling, Characterization & Measurement Tools 
For RF Circuits, Systems & Electromagnetic Structures

<table>
<tr>
<td>
{|class="wikitable"
|-
! [http://www.emagtech.com/wiki/index.php?title=EM.Cube EM.Cube]
|-
|[[File:emcubePAGE.png |250px | link=http://www.emagtech.com/wiki/index.php?title=EM.Cube]]
|-
! [[RF.Spice A/D | RF.Spice A/D]] & [[RF.Spice A/D | B2.Spice A/D]]
|-
| [[File:RfspicePAGE New.png |250px | link=RF.Spice A/D | RF.Spice A/D]]
|-
|-
! [[NeoScan | NeoScan]]
|-
| [[File:NeoScan_Product.png |250px | link=NeoScan | NeoScan ]]
|-
|}
</td>
</tr>
</table>

EMAG Technologies Inc. offers three exciting families of software and hardware products for RF, electronics and electrical engineers, including electronic design automation (EDA) tools and RF test and measurement systems. Learn more about each product by clicking on the respective link and access a wealth of documentation, tutorials and videos.

<DynamicArticleList>
title=Most Popular Articles
type=hot
count=8
</DynamicArticleList>

Each tutorial lesson listed below walks you through the basic features of one of [[EM.Cube]]'s computational modules:

----------------------------------------------------------------------------------------

[[What%27s_New_in_EM.Cube_R20.1%3F | What's New in EM.Cube 2020?]]

Old [[EM.Tempo]] Tutorial Lessons

* [[EM.Tempo Tutorial Lesson 1: Analyzing A Center-Fed Resonant Dipole Antenna]]
* [[EM.Tempo Tutorial Lesson 2: Analyzing Scattering From A Sphere]]
* [[EM.Tempo Tutorial Lesson 3: Modeling A Probe-Fed Microstrip Patch Antenna]]
* [[EM.Tempo Tutorial Lesson 4: Modeling A Patch Antenna Array]]
* [[EM.Tempo Tutorial Lesson 5: Analyzing A Planar Microstrip Band-Stop Filter]]
* [[EM.Tempo Tutorial Lesson 6: Modeling Rectangular Waveguide Structures]]
* [[EM.Tempo Tutorial Lesson 7: Designing A Pyramidal Horn Antenna]]
* [[EM.Tempo Tutorial Lesson 8: Analyzing A Periodic Frequency Selective Surface]]
* [[EM.Tempo Tutorial Lesson 9: Modeling Coplanar Waveguide Structures And Lumped Devices]]
* [[EM.Tempo Tutorial Lesson 10: Modeling Wave Propagation In Dispersive Media]]
* [[EM.Tempo Tutorial Lesson 11: Simulating A Monopole Antenna Interacting With A Human Head Model]]

Old [[EM.Terrano]] Tutorial Lessons

* [[EM.Terrano Tutorial Lesson 1: Analyzing A Basic Line-Of-Sight Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 2: Examining A Polarimetric Propagation Channel]]
* [[EM.Terrano Tutorial Lesson 3: Analyzing A Multipath Outdoor Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 4: Analyzing Indoor Propagation Inside a Building Model with Penetrable Walls]]
* [[EM.Terrano Tutorial Lesson 5: Simulating A Dense Urban Canyon Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 6: Modeling Irregular Terrain]]
* [[EM.Terrano Tutorial Lesson 7: Parametric Study Of A Realistic Urban Scene]]
* [[EM.Terrano Tutorial Lesson 8: Simulating A Communications Link With Directional Antennas]]
* [[EM.Terrano Tutorial Lesson 9: A SBR Channel Analysis of An Urban Scene]]
* [[EM.Terrano Tutorial Lesson 10: Modeling A Mobile Communications Link]]

Old [[EM.Ferma]] Tutorial Lessons

* [[EM.Ferma Tutorial Lesson 1: Computing The Electric Field & Potential Due To Spherical Charges]]
* [[EM.Ferma Tutorial Lesson 2: Analyzing A Parallel Plate Capacitor]]
* [[EM.Ferma Tutorial Lesson 3: Modeling Objects Immersed In A Uniform Electric Field]]
* [[EM.Ferma Tutorial Lesson 4: Computing The Magnetic Field Of Linear Currents In Free Space & Magnetic Media]]
* [[EM.Ferma Tutorial Lesson 5: Modeling Solenoids & Toroidal Coils]]
* [[EM.Ferma Tutorial Lesson 6: Analyzing Permanent Magnets]]
* [[EM.Ferma Tutorial Lesson 7: Analyzing A Microstrip Transmission Line]]
* [[EM.Ferma Tutorial Lesson 8: Modeling 2D Coplanar Waveguide Structures]]

Old [[EM.Picasso]] Tutorial Lessons

* [[EM.Picasso Tutorial Lesson 1: Analyzing A Microstrip-Fed Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 2: Designing A Patch Antenna With A Recessed Feed]]
* [[EM.Picasso Tutorial Lesson 3: Analyzing A Planar Microstrip Band-Stop Filter]]
* [[EM.Picasso Tutorial Lesson 4: Designing A Circularly Polarized Probe-Fed Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 5: Analyzing Patch Antenna Arrays]]
* [[EM.Picasso Tutorial Lesson 6: Analyzing A Periodic Frequency Selective Surface]]
* [[EM.Picasso Tutorial Lesson 7: Designing A Slot-Coupled Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 8: Analyzing A CPW-Fed Folded Dipole Slot Antenna]]
* [[EM.Picasso Tutorial Lesson 9: Designing a Microstrip Wilkinson Power Divider]]
* [[EM.Picasso Tutorial Lesson 10: Optimizing A Microstrip Patch Antenna Design]]

Old [[EM.Libera]] Tutorial Lessons

* [[EM.Libera Tutorial Lesson 1: Analyzing A Center-Fed Wire Dipole Antenna]]
* [[EM.Libera Tutorial Lesson 2: Designing A Yagi-Uda Dipole Array]]
* [[EM.Libera Tutorial Lesson 3: Computing The Radar Cross Section Of Metallic, Dielectric & Composite Targets]]

Old [[EM.Illumina]] Tutorial Lessons

* [[EM.Illumina Tutorial Lesson 1: Analyzing The Scattering From Metal Targets]]
* [[EM.Illumina Tutorial Lesson 2: Computing The Radar Cross Section Of Corner Reflectors]]
* [[EM.Illumina Tutorial Lesson 3: Computing The Radiation Pattern Of Parabolic Dish Reflectors]]
* [[EM.Illumina Tutorial Lesson 4: Simulating Radiation In The Presence Of Large Metallic Shipboard Platforms]]

These are the new pages added or modified for [[EM.Cube]] Release R17:

[[New PO Theory]]

[[What's New in EM.Cube R19.1]]

[[OLD What's New in EM.Cube R18.1?]]

[[What's New in EM.Cube R20.1?]]

[[Glossary of EM.Cube's Materials & Other Physical Object Types]]

[[Glossary of EM.Cube's Sources & Devices]]

[[EM.Terrano Tutorial Lesson 4: Analyzing Indoor Propagation Inside a Building Model with Penetrable Walls]]

[[EM.Terrano Tutorial Lesson 9: A SBR Channel Analysis of An Urban Scene]]

[[EM.Terrano Tutorial Lesson 10: Modeling A Mobile Communications Link]]

----------------------------------------------------------------------------------------

These are the old [[EM.Cube]] documentation pages:

[[The Old EM.Cube Wiki Start Page]]

[[THE OLD Getting Started with EM.Cube]]

[[THE OLD What's New in EM.Cube 2016?]]

[[THE OLD Defining Simulation Observables & Visualizing Output Data]]

---------------------------------

[[V&V Article 6: Using EM.Cube And NeoScan System Together For Antenna Design]]

[[Installing EM.Cube]]

[[EM.Cube FAQ]]

----------------------------------------------------------------------------------------

These are all old stuff:

[[NeoScan_Complete]]

[[NeoScan Manuals]]

[[NeoScan Manual Part A: Getting Started]]

<table>
<tr>
<td>
{|class="wikitable"
|-
! [[EM.Cube]]
|-
|[[File:emcubePAGE.png |225px | link=EM.Cube]]
|-
|}
</td>
<td>   </td>
<td>
{|class="wikitable"
|-
! [[RF.Spice A/D | RF.Spice A/D]]
|-
| [[File:RfspicePAGE New.png |277px | link=RF.Spice A/D | RF.Spice A/D]]
|-
|}
</td>
<td>   </td>
<td>
{|class="wikitable"
|-
! [[RF.Spice A/D | B2.Spice A/D]]
|-
| [[File:B2spicePAGE.png |226px | link=RF.Spice A/D | B2.Spice A/D]]
|-
|}
</td>
<td>   </td>
<td>
{|class="wikitable"
|-
! [[NeoScan | NeoScan]]
|-
| [[File:NeoScan_Product.png |245px | link=NeoScan | NeoScan ]]
|-
|}
</td>
</tr>
</table>

----

[[Old Gateway]]

[[Old EM.Cube Page]]

[[Old Digital Glossary]]

[[MatchIndexTest]]

----

[[Image:Back_icon.png|40px]] '''[[Main_Page | Back to Emagtech Wiki Gateway]]'''

New Tutorials

2022-11-14T23:28:07Z

Asabet:

== EM.Cube Tutorials ==

'''Welcome to EMAGTECH Wiki Gateway!'''

Introducing 
Unified Modeling, Characterization & Measurement Tools 
For RF Circuits, Systems & Electromagnetic Structures

<table>
<tr>
<td>
{|class="wikitable"
|-
! [http://www.emagtech.com/wiki/index.php?title=EM.Cube]
|-
|[[File:emcubePAGE.png |250px | link=http://www.emagtech.com/wiki/index.php?title=EM.Cube]]
|-
! [[RF.Spice A/D | RF.Spice A/D]] & [[RF.Spice A/D | B2.Spice A/D]]
|-
| [[File:RfspicePAGE New.png |250px | link=RF.Spice A/D | RF.Spice A/D]]
|-
|-
! [[NeoScan | NeoScan]]
|-
| [[File:NeoScan_Product.png |250px | link=NeoScan | NeoScan ]]
|-
|}
</td>
</tr>
</table>

EMAG Technologies Inc. offers three exciting families of software and hardware products for RF, electronics and electrical engineers, including electronic design automation (EDA) tools and RF test and measurement systems. Learn more about each product by clicking on the respective link and access a wealth of documentation, tutorials and videos.

<DynamicArticleList>
title=Most Popular Articles
type=hot
count=8
</DynamicArticleList>

Each tutorial lesson listed below walks you through the basic features of one of [[EM.Cube]]'s computational modules:

----------------------------------------------------------------------------------------

[[What%27s_New_in_EM.Cube_R20.1%3F | What's New in EM.Cube 2020?]]

Old [[EM.Tempo]] Tutorial Lessons

* [[EM.Tempo Tutorial Lesson 1: Analyzing A Center-Fed Resonant Dipole Antenna]]
* [[EM.Tempo Tutorial Lesson 2: Analyzing Scattering From A Sphere]]
* [[EM.Tempo Tutorial Lesson 3: Modeling A Probe-Fed Microstrip Patch Antenna]]
* [[EM.Tempo Tutorial Lesson 4: Modeling A Patch Antenna Array]]
* [[EM.Tempo Tutorial Lesson 5: Analyzing A Planar Microstrip Band-Stop Filter]]
* [[EM.Tempo Tutorial Lesson 6: Modeling Rectangular Waveguide Structures]]
* [[EM.Tempo Tutorial Lesson 7: Designing A Pyramidal Horn Antenna]]
* [[EM.Tempo Tutorial Lesson 8: Analyzing A Periodic Frequency Selective Surface]]
* [[EM.Tempo Tutorial Lesson 9: Modeling Coplanar Waveguide Structures And Lumped Devices]]
* [[EM.Tempo Tutorial Lesson 10: Modeling Wave Propagation In Dispersive Media]]
* [[EM.Tempo Tutorial Lesson 11: Simulating A Monopole Antenna Interacting With A Human Head Model]]

Old [[EM.Terrano]] Tutorial Lessons

* [[EM.Terrano Tutorial Lesson 1: Analyzing A Basic Line-Of-Sight Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 2: Examining A Polarimetric Propagation Channel]]
* [[EM.Terrano Tutorial Lesson 3: Analyzing A Multipath Outdoor Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 4: Analyzing Indoor Propagation Inside a Building Model with Penetrable Walls]]
* [[EM.Terrano Tutorial Lesson 5: Simulating A Dense Urban Canyon Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 6: Modeling Irregular Terrain]]
* [[EM.Terrano Tutorial Lesson 7: Parametric Study Of A Realistic Urban Scene]]
* [[EM.Terrano Tutorial Lesson 8: Simulating A Communications Link With Directional Antennas]]
* [[EM.Terrano Tutorial Lesson 9: A SBR Channel Analysis of An Urban Scene]]
* [[EM.Terrano Tutorial Lesson 10: Modeling A Mobile Communications Link]]

Old [[EM.Ferma]] Tutorial Lessons

* [[EM.Ferma Tutorial Lesson 1: Computing The Electric Field & Potential Due To Spherical Charges]]
* [[EM.Ferma Tutorial Lesson 2: Analyzing A Parallel Plate Capacitor]]
* [[EM.Ferma Tutorial Lesson 3: Modeling Objects Immersed In A Uniform Electric Field]]
* [[EM.Ferma Tutorial Lesson 4: Computing The Magnetic Field Of Linear Currents In Free Space & Magnetic Media]]
* [[EM.Ferma Tutorial Lesson 5: Modeling Solenoids & Toroidal Coils]]
* [[EM.Ferma Tutorial Lesson 6: Analyzing Permanent Magnets]]
* [[EM.Ferma Tutorial Lesson 7: Analyzing A Microstrip Transmission Line]]
* [[EM.Ferma Tutorial Lesson 8: Modeling 2D Coplanar Waveguide Structures]]

Old [[EM.Picasso]] Tutorial Lessons

* [[EM.Picasso Tutorial Lesson 1: Analyzing A Microstrip-Fed Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 2: Designing A Patch Antenna With A Recessed Feed]]
* [[EM.Picasso Tutorial Lesson 3: Analyzing A Planar Microstrip Band-Stop Filter]]
* [[EM.Picasso Tutorial Lesson 4: Designing A Circularly Polarized Probe-Fed Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 5: Analyzing Patch Antenna Arrays]]
* [[EM.Picasso Tutorial Lesson 6: Analyzing A Periodic Frequency Selective Surface]]
* [[EM.Picasso Tutorial Lesson 7: Designing A Slot-Coupled Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 8: Analyzing A CPW-Fed Folded Dipole Slot Antenna]]
* [[EM.Picasso Tutorial Lesson 9: Designing a Microstrip Wilkinson Power Divider]]
* [[EM.Picasso Tutorial Lesson 10: Optimizing A Microstrip Patch Antenna Design]]

Old [[EM.Libera]] Tutorial Lessons

* [[EM.Libera Tutorial Lesson 1: Analyzing A Center-Fed Wire Dipole Antenna]]
* [[EM.Libera Tutorial Lesson 2: Designing A Yagi-Uda Dipole Array]]
* [[EM.Libera Tutorial Lesson 3: Computing The Radar Cross Section Of Metallic, Dielectric & Composite Targets]]

Old [[EM.Illumina]] Tutorial Lessons

* [[EM.Illumina Tutorial Lesson 1: Analyzing The Scattering From Metal Targets]]
* [[EM.Illumina Tutorial Lesson 2: Computing The Radar Cross Section Of Corner Reflectors]]
* [[EM.Illumina Tutorial Lesson 3: Computing The Radiation Pattern Of Parabolic Dish Reflectors]]
* [[EM.Illumina Tutorial Lesson 4: Simulating Radiation In The Presence Of Large Metallic Shipboard Platforms]]

These are the new pages added or modified for [[EM.Cube]] Release R17:

[[New PO Theory]]

[[What's New in EM.Cube R19.1]]

[[OLD What's New in EM.Cube R18.1?]]

[[What's New in EM.Cube R20.1?]]

[[Glossary of EM.Cube's Materials & Other Physical Object Types]]

[[Glossary of EM.Cube's Sources & Devices]]

[[EM.Terrano Tutorial Lesson 4: Analyzing Indoor Propagation Inside a Building Model with Penetrable Walls]]

[[EM.Terrano Tutorial Lesson 9: A SBR Channel Analysis of An Urban Scene]]

[[EM.Terrano Tutorial Lesson 10: Modeling A Mobile Communications Link]]

----------------------------------------------------------------------------------------

These are the old [[EM.Cube]] documentation pages:

[[The Old EM.Cube Wiki Start Page]]

[[THE OLD Getting Started with EM.Cube]]

[[THE OLD What's New in EM.Cube 2016?]]

[[THE OLD Defining Simulation Observables & Visualizing Output Data]]

---------------------------------

[[V&V Article 6: Using EM.Cube And NeoScan System Together For Antenna Design]]

[[Installing EM.Cube]]

[[EM.Cube FAQ]]

----------------------------------------------------------------------------------------

These are all old stuff:

[[NeoScan_Complete]]

[[NeoScan Manuals]]

[[NeoScan Manual Part A: Getting Started]]

<table>
<tr>
<td>
{|class="wikitable"
|-
! [[EM.Cube]]
|-
|[[File:emcubePAGE.png |225px | link=EM.Cube]]
|-
|}
</td>
<td>   </td>
<td>
{|class="wikitable"
|-
! [[RF.Spice A/D | RF.Spice A/D]]
|-
| [[File:RfspicePAGE New.png |277px | link=RF.Spice A/D | RF.Spice A/D]]
|-
|}
</td>
<td>   </td>
<td>
{|class="wikitable"
|-
! [[RF.Spice A/D | B2.Spice A/D]]
|-
| [[File:B2spicePAGE.png |226px | link=RF.Spice A/D | B2.Spice A/D]]
|-
|}
</td>
<td>   </td>
<td>
{|class="wikitable"
|-
! [[NeoScan | NeoScan]]
|-
| [[File:NeoScan_Product.png |245px | link=NeoScan | NeoScan ]]
|-
|}
</td>
</tr>
</table>

----

[[Old Gateway]]

[[Old EM.Cube Page]]

[[Old Digital Glossary]]

[[MatchIndexTest]]

----

[[Image:Back_icon.png|40px]] '''[[Main_Page | Back to Emagtech Wiki Gateway]]'''

New Tutorials

2022-11-14T23:27:44Z

Asabet:

== EM.Cube Tutorials ==

'''Welcome to EMAGTECH Wiki Gateway!'''

Introducing 
Unified Modeling, Characterization & Measurement Tools 
For RF Circuits, Systems & Electromagnetic Structures

<table>
<tr>
<td>
{|class="wikitable"
|-
! [[http://www.emagtech.com/wiki/index.php?title=EM.Cube]]
|-
|[[File:emcubePAGE.png |250px | link=http://www.emagtech.com/wiki/index.php?title=EM.Cube]]
|-
! [[RF.Spice A/D | RF.Spice A/D]] & [[RF.Spice A/D | B2.Spice A/D]]
|-
| [[File:RfspicePAGE New.png |250px | link=RF.Spice A/D | RF.Spice A/D]]
|-
|-
! [[NeoScan | NeoScan]]
|-
| [[File:NeoScan_Product.png |250px | link=NeoScan | NeoScan ]]
|-
|}
</td>
</tr>
</table>

EMAG Technologies Inc. offers three exciting families of software and hardware products for RF, electronics and electrical engineers, including electronic design automation (EDA) tools and RF test and measurement systems. Learn more about each product by clicking on the respective link and access a wealth of documentation, tutorials and videos.

<DynamicArticleList>
title=Most Popular Articles
type=hot
count=8
</DynamicArticleList>

Each tutorial lesson listed below walks you through the basic features of one of [[EM.Cube]]'s computational modules:

----------------------------------------------------------------------------------------

[[What%27s_New_in_EM.Cube_R20.1%3F | What's New in EM.Cube 2020?]]

Old [[EM.Tempo]] Tutorial Lessons

* [[EM.Tempo Tutorial Lesson 1: Analyzing A Center-Fed Resonant Dipole Antenna]]
* [[EM.Tempo Tutorial Lesson 2: Analyzing Scattering From A Sphere]]
* [[EM.Tempo Tutorial Lesson 3: Modeling A Probe-Fed Microstrip Patch Antenna]]
* [[EM.Tempo Tutorial Lesson 4: Modeling A Patch Antenna Array]]
* [[EM.Tempo Tutorial Lesson 5: Analyzing A Planar Microstrip Band-Stop Filter]]
* [[EM.Tempo Tutorial Lesson 6: Modeling Rectangular Waveguide Structures]]
* [[EM.Tempo Tutorial Lesson 7: Designing A Pyramidal Horn Antenna]]
* [[EM.Tempo Tutorial Lesson 8: Analyzing A Periodic Frequency Selective Surface]]
* [[EM.Tempo Tutorial Lesson 9: Modeling Coplanar Waveguide Structures And Lumped Devices]]
* [[EM.Tempo Tutorial Lesson 10: Modeling Wave Propagation In Dispersive Media]]
* [[EM.Tempo Tutorial Lesson 11: Simulating A Monopole Antenna Interacting With A Human Head Model]]

Old [[EM.Terrano]] Tutorial Lessons

* [[EM.Terrano Tutorial Lesson 1: Analyzing A Basic Line-Of-Sight Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 2: Examining A Polarimetric Propagation Channel]]
* [[EM.Terrano Tutorial Lesson 3: Analyzing A Multipath Outdoor Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 4: Analyzing Indoor Propagation Inside a Building Model with Penetrable Walls]]
* [[EM.Terrano Tutorial Lesson 5: Simulating A Dense Urban Canyon Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 6: Modeling Irregular Terrain]]
* [[EM.Terrano Tutorial Lesson 7: Parametric Study Of A Realistic Urban Scene]]
* [[EM.Terrano Tutorial Lesson 8: Simulating A Communications Link With Directional Antennas]]
* [[EM.Terrano Tutorial Lesson 9: A SBR Channel Analysis of An Urban Scene]]
* [[EM.Terrano Tutorial Lesson 10: Modeling A Mobile Communications Link]]

Old [[EM.Ferma]] Tutorial Lessons

* [[EM.Ferma Tutorial Lesson 1: Computing The Electric Field & Potential Due To Spherical Charges]]
* [[EM.Ferma Tutorial Lesson 2: Analyzing A Parallel Plate Capacitor]]
* [[EM.Ferma Tutorial Lesson 3: Modeling Objects Immersed In A Uniform Electric Field]]
* [[EM.Ferma Tutorial Lesson 4: Computing The Magnetic Field Of Linear Currents In Free Space & Magnetic Media]]
* [[EM.Ferma Tutorial Lesson 5: Modeling Solenoids & Toroidal Coils]]
* [[EM.Ferma Tutorial Lesson 6: Analyzing Permanent Magnets]]
* [[EM.Ferma Tutorial Lesson 7: Analyzing A Microstrip Transmission Line]]
* [[EM.Ferma Tutorial Lesson 8: Modeling 2D Coplanar Waveguide Structures]]

Old [[EM.Picasso]] Tutorial Lessons

* [[EM.Picasso Tutorial Lesson 1: Analyzing A Microstrip-Fed Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 2: Designing A Patch Antenna With A Recessed Feed]]
* [[EM.Picasso Tutorial Lesson 3: Analyzing A Planar Microstrip Band-Stop Filter]]
* [[EM.Picasso Tutorial Lesson 4: Designing A Circularly Polarized Probe-Fed Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 5: Analyzing Patch Antenna Arrays]]
* [[EM.Picasso Tutorial Lesson 6: Analyzing A Periodic Frequency Selective Surface]]
* [[EM.Picasso Tutorial Lesson 7: Designing A Slot-Coupled Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 8: Analyzing A CPW-Fed Folded Dipole Slot Antenna]]
* [[EM.Picasso Tutorial Lesson 9: Designing a Microstrip Wilkinson Power Divider]]
* [[EM.Picasso Tutorial Lesson 10: Optimizing A Microstrip Patch Antenna Design]]

Old [[EM.Libera]] Tutorial Lessons

* [[EM.Libera Tutorial Lesson 1: Analyzing A Center-Fed Wire Dipole Antenna]]
* [[EM.Libera Tutorial Lesson 2: Designing A Yagi-Uda Dipole Array]]
* [[EM.Libera Tutorial Lesson 3: Computing The Radar Cross Section Of Metallic, Dielectric & Composite Targets]]

Old [[EM.Illumina]] Tutorial Lessons

* [[EM.Illumina Tutorial Lesson 1: Analyzing The Scattering From Metal Targets]]
* [[EM.Illumina Tutorial Lesson 2: Computing The Radar Cross Section Of Corner Reflectors]]
* [[EM.Illumina Tutorial Lesson 3: Computing The Radiation Pattern Of Parabolic Dish Reflectors]]
* [[EM.Illumina Tutorial Lesson 4: Simulating Radiation In The Presence Of Large Metallic Shipboard Platforms]]

These are the new pages added or modified for [[EM.Cube]] Release R17:

[[New PO Theory]]

[[What's New in EM.Cube R19.1]]

[[OLD What's New in EM.Cube R18.1?]]

[[What's New in EM.Cube R20.1?]]

[[Glossary of EM.Cube's Materials & Other Physical Object Types]]

[[Glossary of EM.Cube's Sources & Devices]]

[[EM.Terrano Tutorial Lesson 4: Analyzing Indoor Propagation Inside a Building Model with Penetrable Walls]]

[[EM.Terrano Tutorial Lesson 9: A SBR Channel Analysis of An Urban Scene]]

[[EM.Terrano Tutorial Lesson 10: Modeling A Mobile Communications Link]]

----------------------------------------------------------------------------------------

These are the old [[EM.Cube]] documentation pages:

[[The Old EM.Cube Wiki Start Page]]

[[THE OLD Getting Started with EM.Cube]]

[[THE OLD What's New in EM.Cube 2016?]]

[[THE OLD Defining Simulation Observables & Visualizing Output Data]]

---------------------------------

[[V&V Article 6: Using EM.Cube And NeoScan System Together For Antenna Design]]

[[Installing EM.Cube]]

[[EM.Cube FAQ]]

----------------------------------------------------------------------------------------

These are all old stuff:

[[NeoScan_Complete]]

[[NeoScan Manuals]]

[[NeoScan Manual Part A: Getting Started]]

<table>
<tr>
<td>
{|class="wikitable"
|-
! [[EM.Cube]]
|-
|[[File:emcubePAGE.png |225px | link=EM.Cube]]
|-
|}
</td>
<td>   </td>
<td>
{|class="wikitable"
|-
! [[RF.Spice A/D | RF.Spice A/D]]
|-
| [[File:RfspicePAGE New.png |277px | link=RF.Spice A/D | RF.Spice A/D]]
|-
|}
</td>
<td>   </td>
<td>
{|class="wikitable"
|-
! [[RF.Spice A/D | B2.Spice A/D]]
|-
| [[File:B2spicePAGE.png |226px | link=RF.Spice A/D | B2.Spice A/D]]
|-
|}
</td>
<td>   </td>
<td>
{|class="wikitable"
|-
! [[NeoScan | NeoScan]]
|-
| [[File:NeoScan_Product.png |245px | link=NeoScan | NeoScan ]]
|-
|}
</td>
</tr>
</table>

----

[[Old Gateway]]

[[Old EM.Cube Page]]

[[Old Digital Glossary]]

[[MatchIndexTest]]

----

[[Image:Back_icon.png|40px]] '''[[Main_Page | Back to Emagtech Wiki Gateway]]'''

New Tutorials

2022-11-14T23:25:41Z

Asabet:

== EM.Cube Tutorials ==

|[[File:emcubePAGE.png |250px | link=EM.Cube]]

Each tutorial lesson listed below walks you through the basic features of one of [[EM.Cube]]'s computational modules:

----------------------------------------------------------------------------------------

[[What%27s_New_in_EM.Cube_R20.1%3F | What's New in EM.Cube 2020?]]

Old [[EM.Tempo]] Tutorial Lessons

* [[EM.Tempo Tutorial Lesson 1: Analyzing A Center-Fed Resonant Dipole Antenna]]
* [[EM.Tempo Tutorial Lesson 2: Analyzing Scattering From A Sphere]]
* [[EM.Tempo Tutorial Lesson 3: Modeling A Probe-Fed Microstrip Patch Antenna]]
* [[EM.Tempo Tutorial Lesson 4: Modeling A Patch Antenna Array]]
* [[EM.Tempo Tutorial Lesson 5: Analyzing A Planar Microstrip Band-Stop Filter]]
* [[EM.Tempo Tutorial Lesson 6: Modeling Rectangular Waveguide Structures]]
* [[EM.Tempo Tutorial Lesson 7: Designing A Pyramidal Horn Antenna]]
* [[EM.Tempo Tutorial Lesson 8: Analyzing A Periodic Frequency Selective Surface]]
* [[EM.Tempo Tutorial Lesson 9: Modeling Coplanar Waveguide Structures And Lumped Devices]]
* [[EM.Tempo Tutorial Lesson 10: Modeling Wave Propagation In Dispersive Media]]
* [[EM.Tempo Tutorial Lesson 11: Simulating A Monopole Antenna Interacting With A Human Head Model]]

Old [[EM.Terrano]] Tutorial Lessons

* [[EM.Terrano Tutorial Lesson 1: Analyzing A Basic Line-Of-Sight Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 2: Examining A Polarimetric Propagation Channel]]
* [[EM.Terrano Tutorial Lesson 3: Analyzing A Multipath Outdoor Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 4: Analyzing Indoor Propagation Inside a Building Model with Penetrable Walls]]
* [[EM.Terrano Tutorial Lesson 5: Simulating A Dense Urban Canyon Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 6: Modeling Irregular Terrain]]
* [[EM.Terrano Tutorial Lesson 7: Parametric Study Of A Realistic Urban Scene]]
* [[EM.Terrano Tutorial Lesson 8: Simulating A Communications Link With Directional Antennas]]
* [[EM.Terrano Tutorial Lesson 9: A SBR Channel Analysis of An Urban Scene]]
* [[EM.Terrano Tutorial Lesson 10: Modeling A Mobile Communications Link]]

Old [[EM.Ferma]] Tutorial Lessons

* [[EM.Ferma Tutorial Lesson 1: Computing The Electric Field & Potential Due To Spherical Charges]]
* [[EM.Ferma Tutorial Lesson 2: Analyzing A Parallel Plate Capacitor]]
* [[EM.Ferma Tutorial Lesson 3: Modeling Objects Immersed In A Uniform Electric Field]]
* [[EM.Ferma Tutorial Lesson 4: Computing The Magnetic Field Of Linear Currents In Free Space & Magnetic Media]]
* [[EM.Ferma Tutorial Lesson 5: Modeling Solenoids & Toroidal Coils]]
* [[EM.Ferma Tutorial Lesson 6: Analyzing Permanent Magnets]]
* [[EM.Ferma Tutorial Lesson 7: Analyzing A Microstrip Transmission Line]]
* [[EM.Ferma Tutorial Lesson 8: Modeling 2D Coplanar Waveguide Structures]]

Old [[EM.Picasso]] Tutorial Lessons

* [[EM.Picasso Tutorial Lesson 1: Analyzing A Microstrip-Fed Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 2: Designing A Patch Antenna With A Recessed Feed]]
* [[EM.Picasso Tutorial Lesson 3: Analyzing A Planar Microstrip Band-Stop Filter]]
* [[EM.Picasso Tutorial Lesson 4: Designing A Circularly Polarized Probe-Fed Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 5: Analyzing Patch Antenna Arrays]]
* [[EM.Picasso Tutorial Lesson 6: Analyzing A Periodic Frequency Selective Surface]]
* [[EM.Picasso Tutorial Lesson 7: Designing A Slot-Coupled Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 8: Analyzing A CPW-Fed Folded Dipole Slot Antenna]]
* [[EM.Picasso Tutorial Lesson 9: Designing a Microstrip Wilkinson Power Divider]]
* [[EM.Picasso Tutorial Lesson 10: Optimizing A Microstrip Patch Antenna Design]]

Old [[EM.Libera]] Tutorial Lessons

* [[EM.Libera Tutorial Lesson 1: Analyzing A Center-Fed Wire Dipole Antenna]]
* [[EM.Libera Tutorial Lesson 2: Designing A Yagi-Uda Dipole Array]]
* [[EM.Libera Tutorial Lesson 3: Computing The Radar Cross Section Of Metallic, Dielectric & Composite Targets]]

Old [[EM.Illumina]] Tutorial Lessons

* [[EM.Illumina Tutorial Lesson 1: Analyzing The Scattering From Metal Targets]]
* [[EM.Illumina Tutorial Lesson 2: Computing The Radar Cross Section Of Corner Reflectors]]
* [[EM.Illumina Tutorial Lesson 3: Computing The Radiation Pattern Of Parabolic Dish Reflectors]]
* [[EM.Illumina Tutorial Lesson 4: Simulating Radiation In The Presence Of Large Metallic Shipboard Platforms]]

These are the new pages added or modified for [[EM.Cube]] Release R17:

[[New PO Theory]]

[[What's New in EM.Cube R19.1]]

[[OLD What's New in EM.Cube R18.1?]]

[[What's New in EM.Cube R20.1?]]

[[Glossary of EM.Cube's Materials & Other Physical Object Types]]

[[Glossary of EM.Cube's Sources & Devices]]

[[EM.Terrano Tutorial Lesson 4: Analyzing Indoor Propagation Inside a Building Model with Penetrable Walls]]

[[EM.Terrano Tutorial Lesson 9: A SBR Channel Analysis of An Urban Scene]]

[[EM.Terrano Tutorial Lesson 10: Modeling A Mobile Communications Link]]

----------------------------------------------------------------------------------------

These are the old [[EM.Cube]] documentation pages:

[[The Old EM.Cube Wiki Start Page]]

[[THE OLD Getting Started with EM.Cube]]

[[THE OLD What's New in EM.Cube 2016?]]

[[THE OLD Defining Simulation Observables & Visualizing Output Data]]

---------------------------------

[[V&V Article 6: Using EM.Cube And NeoScan System Together For Antenna Design]]

[[Installing EM.Cube]]

[[EM.Cube FAQ]]

----------------------------------------------------------------------------------------

These are all old stuff:

[[NeoScan_Complete]]

[[NeoScan Manuals]]

[[NeoScan Manual Part A: Getting Started]]

<table>
<tr>
<td>
{|class="wikitable"
|-
! [[EM.Cube]]
|-
|[[File:emcubePAGE.png |225px | link=EM.Cube]]
|-
|}
</td>
<td>   </td>
<td>
{|class="wikitable"
|-
! [[RF.Spice A/D | RF.Spice A/D]]
|-
| [[File:RfspicePAGE New.png |277px | link=RF.Spice A/D | RF.Spice A/D]]
|-
|}
</td>
<td>   </td>
<td>
{|class="wikitable"
|-
! [[RF.Spice A/D | B2.Spice A/D]]
|-
| [[File:B2spicePAGE.png |226px | link=RF.Spice A/D | B2.Spice A/D]]
|-
|}
</td>
<td>   </td>
<td>
{|class="wikitable"
|-
! [[NeoScan | NeoScan]]
|-
| [[File:NeoScan_Product.png |245px | link=NeoScan | NeoScan ]]
|-
|}
</td>
</tr>
</table>

----

[[Old Gateway]]

[[Old EM.Cube Page]]

[[Old Digital Glossary]]

[[MatchIndexTest]]

----

[[Image:Back_icon.png|40px]] '''[[Main_Page | Back to Emagtech Wiki Gateway]]'''

File:EMT 20221021.PNG

2022-10-21T19:54:37Z

Asabet:

MatchIndexTest

2022-10-21T19:54:19Z

Asabet:

Content

[[Image:EMT_20221021.PNG]] '''[[EM.Illumina | Back to EM.Illumina Manual]]'''

MatchIndexTest

2022-10-21T19:52:54Z

Asabet:

Content

[[Image:Back_icon.png|30px]] '''[[EM.Illumina | Back to EM.Illumina Manual]]'''

MatchIndexTest

2022-10-21T19:51:39Z

Asabet: Created page with "Content"

Content

New Tutorials

2022-10-21T19:51:10Z

Asabet:

== EM.Cube Tutorials ==

Each tutorial lesson listed below walks you through the basic features of one of [[EM.Cube]]'s computational modules:

----------------------------------------------------------------------------------------

[[What%27s_New_in_EM.Cube_R20.1%3F | What's New in EM.Cube 2020?]]

Old [[EM.Tempo]] Tutorial Lessons

* [[EM.Tempo Tutorial Lesson 1: Analyzing A Center-Fed Resonant Dipole Antenna]]
* [[EM.Tempo Tutorial Lesson 2: Analyzing Scattering From A Sphere]]
* [[EM.Tempo Tutorial Lesson 3: Modeling A Probe-Fed Microstrip Patch Antenna]]
* [[EM.Tempo Tutorial Lesson 4: Modeling A Patch Antenna Array]]
* [[EM.Tempo Tutorial Lesson 5: Analyzing A Planar Microstrip Band-Stop Filter]]
* [[EM.Tempo Tutorial Lesson 6: Modeling Rectangular Waveguide Structures]]
* [[EM.Tempo Tutorial Lesson 7: Designing A Pyramidal Horn Antenna]]
* [[EM.Tempo Tutorial Lesson 8: Analyzing A Periodic Frequency Selective Surface]]
* [[EM.Tempo Tutorial Lesson 9: Modeling Coplanar Waveguide Structures And Lumped Devices]]
* [[EM.Tempo Tutorial Lesson 10: Modeling Wave Propagation In Dispersive Media]]
* [[EM.Tempo Tutorial Lesson 11: Simulating A Monopole Antenna Interacting With A Human Head Model]]

Old [[EM.Terrano]] Tutorial Lessons

* [[EM.Terrano Tutorial Lesson 1: Analyzing A Basic Line-Of-Sight Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 2: Examining A Polarimetric Propagation Channel]]
* [[EM.Terrano Tutorial Lesson 3: Analyzing A Multipath Outdoor Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 4: Analyzing Indoor Propagation Inside a Building Model with Penetrable Walls]]
* [[EM.Terrano Tutorial Lesson 5: Simulating A Dense Urban Canyon Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 6: Modeling Irregular Terrain]]
* [[EM.Terrano Tutorial Lesson 7: Parametric Study Of A Realistic Urban Scene]]
* [[EM.Terrano Tutorial Lesson 8: Simulating A Communications Link With Directional Antennas]]
* [[EM.Terrano Tutorial Lesson 9: A SBR Channel Analysis of An Urban Scene]]
* [[EM.Terrano Tutorial Lesson 10: Modeling A Mobile Communications Link]]

Old [[EM.Ferma]] Tutorial Lessons

* [[EM.Ferma Tutorial Lesson 1: Computing The Electric Field & Potential Due To Spherical Charges]]
* [[EM.Ferma Tutorial Lesson 2: Analyzing A Parallel Plate Capacitor]]
* [[EM.Ferma Tutorial Lesson 3: Modeling Objects Immersed In A Uniform Electric Field]]
* [[EM.Ferma Tutorial Lesson 4: Computing The Magnetic Field Of Linear Currents In Free Space & Magnetic Media]]
* [[EM.Ferma Tutorial Lesson 5: Modeling Solenoids & Toroidal Coils]]
* [[EM.Ferma Tutorial Lesson 6: Analyzing Permanent Magnets]]
* [[EM.Ferma Tutorial Lesson 7: Analyzing A Microstrip Transmission Line]]
* [[EM.Ferma Tutorial Lesson 8: Modeling 2D Coplanar Waveguide Structures]]

Old [[EM.Picasso]] Tutorial Lessons

* [[EM.Picasso Tutorial Lesson 1: Analyzing A Microstrip-Fed Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 2: Designing A Patch Antenna With A Recessed Feed]]
* [[EM.Picasso Tutorial Lesson 3: Analyzing A Planar Microstrip Band-Stop Filter]]
* [[EM.Picasso Tutorial Lesson 4: Designing A Circularly Polarized Probe-Fed Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 5: Analyzing Patch Antenna Arrays]]
* [[EM.Picasso Tutorial Lesson 6: Analyzing A Periodic Frequency Selective Surface]]
* [[EM.Picasso Tutorial Lesson 7: Designing A Slot-Coupled Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 8: Analyzing A CPW-Fed Folded Dipole Slot Antenna]]
* [[EM.Picasso Tutorial Lesson 9: Designing a Microstrip Wilkinson Power Divider]]
* [[EM.Picasso Tutorial Lesson 10: Optimizing A Microstrip Patch Antenna Design]]

Old [[EM.Libera]] Tutorial Lessons

* [[EM.Libera Tutorial Lesson 1: Analyzing A Center-Fed Wire Dipole Antenna]]
* [[EM.Libera Tutorial Lesson 2: Designing A Yagi-Uda Dipole Array]]
* [[EM.Libera Tutorial Lesson 3: Computing The Radar Cross Section Of Metallic, Dielectric & Composite Targets]]

Old [[EM.Illumina]] Tutorial Lessons

* [[EM.Illumina Tutorial Lesson 1: Analyzing The Scattering From Metal Targets]]
* [[EM.Illumina Tutorial Lesson 2: Computing The Radar Cross Section Of Corner Reflectors]]
* [[EM.Illumina Tutorial Lesson 3: Computing The Radiation Pattern Of Parabolic Dish Reflectors]]
* [[EM.Illumina Tutorial Lesson 4: Simulating Radiation In The Presence Of Large Metallic Shipboard Platforms]]

These are the new pages added or modified for [[EM.Cube]] Release R17:

[[New PO Theory]]

[[What's New in EM.Cube R19.1]]

[[OLD What's New in EM.Cube R18.1?]]

[[What's New in EM.Cube R20.1?]]

[[Glossary of EM.Cube's Materials & Other Physical Object Types]]

[[Glossary of EM.Cube's Sources & Devices]]

[[EM.Terrano Tutorial Lesson 4: Analyzing Indoor Propagation Inside a Building Model with Penetrable Walls]]

[[EM.Terrano Tutorial Lesson 9: A SBR Channel Analysis of An Urban Scene]]

[[EM.Terrano Tutorial Lesson 10: Modeling A Mobile Communications Link]]

----------------------------------------------------------------------------------------

These are the old [[EM.Cube]] documentation pages:

[[The Old EM.Cube Wiki Start Page]]

[[THE OLD Getting Started with EM.Cube]]

[[THE OLD What's New in EM.Cube 2016?]]

[[THE OLD Defining Simulation Observables & Visualizing Output Data]]

---------------------------------

[[V&V Article 6: Using EM.Cube And NeoScan System Together For Antenna Design]]

[[Installing EM.Cube]]

[[EM.Cube FAQ]]

----------------------------------------------------------------------------------------

These are all old stuff:

[[NeoScan_Complete]]

[[NeoScan Manuals]]

[[NeoScan Manual Part A: Getting Started]]

<table>
<tr>
<td>
{|class="wikitable"
|-
! [[EM.Cube]]
|-
|[[File:emcubePAGE.png |225px | link=EM.Cube]]
|-
|}
</td>
<td>   </td>
<td>
{|class="wikitable"
|-
! [[RF.Spice A/D | RF.Spice A/D]]
|-
| [[File:RfspicePAGE New.png |277px | link=RF.Spice A/D | RF.Spice A/D]]
|-
|}
</td>
<td>   </td>
<td>
{|class="wikitable"
|-
! [[RF.Spice A/D | B2.Spice A/D]]
|-
| [[File:B2spicePAGE.png |226px | link=RF.Spice A/D | B2.Spice A/D]]
|-
|}
</td>
<td>   </td>
<td>
{|class="wikitable"
|-
! [[NeoScan | NeoScan]]
|-
| [[File:NeoScan_Product.png |245px | link=NeoScan | NeoScan ]]
|-
|}
</td>
</tr>
</table>

----

[[Old Gateway]]

[[Old EM.Cube Page]]

[[Old Digital Glossary]]

[[MatchIndexTest]]

----

[[Image:Back_icon.png|40px]] '''[[Main_Page | Back to Emagtech Wiki Gateway]]'''

NeoScan Manual Part A: Getting Started

2022-08-29T17:51:43Z

Asabet:

== Overview ==

=== General Overview ===

Ver 1

[[NeoScan]]® real-time field measurement and scanning system is a turnkey, electric or magnetic field probe and measurement system. It can be configured as a near-field scanning system for mapping aperture-level field distributions with minimal invasiveness to the device or system under test. Or it can be used as a real-time field probe system for sensing or detecting electric and magnetic fields in a variety of media.

The [[NeoScan]] system can be used as an essential tool for test and evaluation of antennas and phased array systems and is particularly useful for phase characterization and calibration. Unlike conventional near-field scanning systems that utilize metallic radiators to pick up the fields, [[NeoScan]] probes are non-metallic, operating based on electro-optic (EO) or magneto-optic (MO) effects. Its field probes feature extremely small EO or MO crystals mounted at the tip of an optical fiber. The combination of the small probe size and absolutely non-metallic parts leads to the ultimate radio frequency (RF) non-invasiveness.

[[NeoScan]] provides detailed field maps of passive and active devices and circuits including RFIC’s and MMIC’s. Such invaluable information can effectively be used for design validation, model verification, diagnostics and fault isolation or performance evaluation of various parts of RF systems. It is also an alternative compact range for measurement of far-field radiation patterns of antennas and arrays, dispensing with a costly anechoic chamber. The system can be used in real-time, polarimetric and coherent sensing and probing of wideband signals and pulses, EMC/EMI testing, and medical device measurements and characterization of biological environments. The [[NeoScan]] system can be configured in a multi-channel architecture for simultaneous field measurement at multiple points and locations. Different channels can measure different polarizations in a coherent manner.

=== Features of the [[NeoScan]] System ===

<ul>
<li>
Wideband operational bandwidth: few MHz to 20GHz, measuring repetitive signals with 50-ps rise time, 10-ns duration, and 80 V/m amplitude with a 10% to 90% definition
</li>
<li>
Hardware system sensitivity requirements of 2 V/m/√Hz
</li>
<li>
Electric field real-time measurement capability
</li>
<ul>
<li>
Multi-port Integrated FC/APC Input
</li>
<li>
Multi-port SMA RF Output
</li>
</ul>
<li>
Scanning measurement capability
</li>
<ul>
<li>
Simultaneous measurement of amplitude and phase
</li>
<li>
Scanning area up to 80” x 80” (2 x 2 m)
</li>
<li>
0.1 micron resolution linear encoder
</li>
</ul>
<li>
Integrated Optical Bench:
</li>
<ul>
<li>
1550 nm Diode Laser (laser beam spot < 100 μm sq)
</li>
<li>
Polarization Controller and Analyzer
</li>
<li>
AC and DC photodetectors
</li>
</ul>
<li>
Very wide dynamic range (>70 dB) and linear response range in 1 V/m to 2 MV/m
</li>
<li>
One normal field probe and two tangential field probe, each having a FC/APC optical fiber connector (Includes 10 m PM fibers on all probes)
</li>
<li>
System Operation, Monitoring, and Optimization Software
</li>
</ul>

=== General Description ===

The [[NeoScan]] real-time field measurement & scanning system provides an entirely new capability for the measurement of high-intensity electric fields. This technology is based on the Pockel’s effect which measures the phase-retardance of an optical beam due to an impinging electric field. This electro-optic effect is observed in non-centrosymmetric crystals when an electric field is directed along certain crystal axes causes a change in the indices of refraction encountered by an incident optical beam. Figure 1.1 shows the basic principle of the electro-optic effect. The electro-optic effect provides a means of modulating the phase or intensity of the optical radiation. In another sense, this effect also makes it possible to detect the presence of an electric field impinging on the crystal. The polarization of an optical beam travelling through a crystal is altered by the electric field in that crystal. The comparison of polarization states allows determination of the amplitude and phase of the existing RF electric field. Since the electro-optic sensing phenomenon relies on small displacements of the atomic crystal structure, the response time of the process is extremely short. This short response time makes it possible to measure high-frequency electric fields up to the terahertz regime.

<center>[[Image:neoscanfig_1_1.png|thumb|center|400px|Figure 1.1: EO modulation of an optical signal.]]</center>

A typical EO probe is composed of an optical fiber affixed with an EO crystal coated with a dielectric reflection layer on its bottom surface as shown in Figure 1.2. These probes have very delicate optical interconnects and extreme care must be taken in handling the probes to prevent excessive shock, bending and out of plane stresses.

Due to its broad measurement bandwidth and high spatial resolution, the EO measurement technique is a promising means to characterize RF systems such as microwave and millimeter-wave integrated circuits, HPM sources and systems, and large-scale active arrays and other radiating structures. Unlike the conventional electrical measurement techniques which require some type of metal structure for the resonant detection of an RF signal, [[NeoScan]]’s unique real-time EO electric field measurement method requires no metal components. As a result, the field perturbation caused by introducing metal within the vicinity of a device under test (DUT) is significantly reduced.

Figure 1.3 shows the electric and magnetic fields distribution of a traveling RF wave with a normal probe shown in typical orientation. To detect the maximum electric field in this configuration, the propagation direction of the optical beam of the probe should be parallel to the E-field direction. In general, a normal EO probe is only sensitive to the electric field component parallel to the probe handle, whereas a tangential probe is sensitive to the electric field component perpendicular to the probe handle. Yet, the E-field sensitivity of a tangential probe depends on its crystal orientation sitting on its tip.

<center>
<table>
<tr>
<td>
[[Image:neoscanfig_1_2.png|thumb|left|380px|Figure 1.2: A single-axis EO probe. The probe tip is protected by Epoxy to
provide nearly identical performance to a bare probe.]]
</td>
<td>
</td>
<td>
</td>
<td>
</td>
<td>
[[Image:neoscanfig_1_3.png|thumb|right|480px|Figure 1.3: Illustrates a normal field measurement as oriented with respect to an incident electric field. The normal probe is oriented with the probe normal to direction of propagation.]]
</td>
</tr>
</table>
</center>

A low noise 1550 nm laser diode is used as optical beam source. The optical connections are fiber-based. The beam is delivered to an optical probe. The polarization of the beam is modulated through an electro-optic crystal on the probe tip. The modulated beam is reflected back into the fiber, and back to the mainframe for analysis. An optical analyzer converts the polarization change of the beam into an amplitude change. The amplitude is linearly proportional to the strength of the external electric field at the probe-crystal location. The equation E=αV is used to calculate the electric field, where α is the calibration factor, or the slope between the electric field E (in V/m) and the measured EO signal V (in V/m/uV). For instance, for a calibration factor of 1.082 V/m/uV. a measured EO signal of 1000 uV (0.001 V), corresponds to and electric field of 1.082 V/m/uV x 1000 V = 1082 V/m.

<center>[[Image:neoscanfig_1_4.png|thumb|center|480px|Figure 1.4: An example of a real time measurement of a 6.6 nsec pulse with 10 kV/m peak field strength. The upper trace shown on the oscilloscope is the input signal, and the lower trace is the measured signal.]]</center>

Due to the fast response of the EO crystal, it is possible to measure extremely high-bandwidth signals with the normal SNR limitations of wideband signal detection. Using this capability, EMAG Technologies Inc. has developed the world’s first fiber-based real-time polarimetric electric field sensor system – [[NeoScan]] – for the measurement of high-power microwave signals. Figure 1.4 is an example of a real time measurement of a 6.6 nsec pulse with 10 kV/m peak field strength. The upper trace shown on the oscilloscope is the received signal, and the lower trace is the detected signal.

The [[NeoScan]] system is capable of measuring signals with bandwidths up to 20 GHz and signal levels as low as 1 V/m for optical probes with a 10 m PM fiber. Because the optical probes are free of metallic parts, it is possible to measure extremely high-field strengths since there are no free electron surfaces to generate arcing. The [[NeoScan]] can measure fields up at least 2 MV/m and possibly higher.

=== System Overview ===

The [[NeoScan]] real-time field measurement and scanning system consists of:

<ul>
<li>
An optical mainframe with a touchscreen control computer that can be used for either real-time high power microwave measurement or E-field scanning as shown in Figure 1.5.

<center>
<table>
<tr>
<td>
[[Image:neoscanfig_1_5.png|thumb|center|600px|Figure 1.5: The NeoScan Optical Mainframe System.]]
</td>
</tr>
<tr>
<td>
[[Image:neoscanfig_1_6.png|thumb|center|600px|Figure 1.6: NeoScan 2-axis translation stage.]]
</td>
</tr>
</table>
</center>

The power switch on the back will turn the system and the laser on or off. It is recommended to turn the [[NeoScan]] system on at least 30 minutes before any operation for warm-up. A USB port is used to communicate with control computer. The “Signal Out” channels can be used for real-time measurements. The RF signal can be displayed either on a high resolution oscilloscope or a spectrum analyzer. The channels can also be configured for near-field scanning measurement with a U-jumper SMA Cables. The scanning configuration can measure both amplitude and the phase of the signal with a Lock-in Amplifier.
</li>
<li>
One normal probe and two tangential probes
</li>
<li>
One 2-axis translation stage with a stage controller for scanning operation (Figure 1.6)
</li>
<li>
One RF Lock-In Amplifier
</li>
<li>
One GPIB-USB cable for instrument control
</li>
<li>
One USB multi-port Hub for instrument control
</li>
<li>
The [[NeoScan]] system control software package
</li>
</ul>

Additional equipment needed to configure [[NeoScan]] as a field scanning system include:
<ul>
<li>
A signal generator to provide the local oscillator (LO) signal for [[NeoScan]]’s output mixer
</li>
<li>
A signal generator to provide a 100 MHz reference signal to lock-in amplifier
</li>
</ul>

==== The Front Panel of [[NeoScan]] Optical Mainframe ====

The front panel is the main interface to the system. It contains a control computer that that runs Microsoft Windows, and controls, commands, and monitors the [[NeoScan]] system’s status (Figure 1.7).

<center>
[[Image:neoscanfig_1_7.png|thumb|center|650px|Figure 1.7: The Front panel of NeoScan Optical Mainframe.]]
</center>

==== The Rear Panel of [[NeoScan]] Optical Mainframe ====

The rear panel is the interface to the instruments and provides complete access for external control, optical fiber excitation, and RF signal output (Figure 1.8). It contains:
<ul>
<li>
A USB interface port for computer control of the system
</li>
<li>
The power switch and red LED Power indicator for turning on or off the system
</li>
<li>
The AC power cord. The AC power requirement is 110V, 60Hz with a 250V 2A fuse
</li>
<li>
Three SMA connector for RF output (Signal Out)
</li>
<li>
Three fiber FC/APC connector (Probe)
</li>
<li>
SMA connectors for frequency scanning mixer includes: IF Out, LO In, and RF In
</li>
<li>
SMA connectors for IF Switch Out and IF Switch Ins
</li>
<li>
An electric fan
</li>
</ul>

<center>
[[Image:neoscanfig_1_8.png|thumb|center|650px|Figure 1.8: NeoScan Real Panel.]]
</center>

=== Acronyms and Abbreviations ===

<table>
<tr>
<td>
</td>
<td>
2D: 2-dimentional
 
3D: 3-dimentional

A/D: Analog-to-Digital
 
AC: Alternating Current
 
AFCW: Air Filled Coax Waveguide

BSO: Bismuth Silicon Oxide

CAL.: Calibration
 
CH/Ch: Channel
 
cm: centimeter
 
CP: Circular polarization
 
CW: Continuous Wave (Pure Sine Wave)

D/A: Digital-to-Analog
 
DAQ: Data Acquisition
 
dB: Decibel
 
dBm: Decibel power referenced to milliwatts
 
DBR: Distributed Bragg reflector
 
DC: Direct Current
 
DUT: Device under test

EMC: Electromagnetic Compatibility
 
EMI: Electromagnetic Interference
 
EO: Electro-Optic

FC/APC: Ferrule Connector / Angle-polished connection, a fiber-optic connector
 
FEP: Fluorinated ethylene propylene, a copolymer of hexafluoropropylene and tetrafluoroethylene

GPIB: General Purpose Interface Bus
 
GRIN: Graded index lens

Hz: Hertz

IF: Intermediate Frequency/The low frequency signal port of a mixer.

LED: Light emitting diode
 
LNA: Low-Noise Amplifier
 
LO: Local Oscillator/The carrier input port of a mixer
 
LTO: Lithium Tantalate (LiTaO3)

m: meter
 
mm: millimeter
 
msec: millisecond (ms)
 
mW: milliwatt
 
MMIC: Monolithic Microwave Integrated Circuits
 
MO: Magneto-Optic

nsec: nanosecond (ns)

PD: Photodetector
 
PM: Polarization maintaining
 
PM: Phase Modulation
 
Pol. Ctrl.: Polarization controller

Ref Level: Reference Level
 
RF: Radio Frequency/The high frequency signal port of a mixer
 
RFI: Radio Frequency Interference
 
RFIC: Radio Frequency Integrated Circuits
 
RT: Real-time

s: Second (sec)
 
SA: Spectrum Analyzer
 
SBIR: Small Business Innovative Research
 
SMA: Subminiature connector ‘A’, a coaxial RF connector
 
SNR: Signal-to-noise ratio (signal power over noise power)

TEM: Transverse Electromagnetic
 
TEM cell: A small chamber generating a consistent electromagnetic field for testing small RF devices

USB: Universal Serial Bus
 
um: Micrometer (m)
 
uV: Microvolt (V)

V/m: Volt/meter
 
V: Volt
</td>
</tr>
</table>

== NeoScan Probe Installation ==

=== Shipping & Handling Precautions ===

The [[NeoScan]] system contains extremely sensitive and fragile components. Use extreme caution whenever operating this system. Do not attempt to service or adjust or install substitute parts to its components. Please contact EMAG Technologies Inc. for service and more information.

In spite of its sophisticated capabilities, the [[NeoScan]] system is easy to learn and operate. You can start using the system within hours. Below are the procedures to help you get started using [[NeoScan]]. We highly recommend that you complete chapters 2 and 3 of [[NeoScan]] and familiarize yourself with its basic functions before attempting to run the system. Turn the [[NeoScan]] system on at least 30 minutes before any operation for warm-up. Before getting started, consider the following precautions:

<ul>
<li>
The system operates from a 100V or 120V nominal AC power source having a line frequency of 50 or 60 Hz. Before connecting the power cord to a power source, verify that the AC input voltage value is correct.
</li>
<li>
[[NeoScan]] real-time field measurement and scanning system contains a 40 mW laser diode emitting Class 3B laser radiation at ~1550 nm. The direct output power from the fiber port of each probe channel on the front panel is less than 10 mW. The beam at 1550 nm is invisible to human being and the invisible beam can be hazardous if directed at the eye. Direct exposure of eye to the invisible laser beam must be avoided.
</li>
<li>
The fans in [[NeoScan]] optical mainframe are required to maintain proper operation. Do not block the vents in the frame box.
</li>
<li>
In order to avoid EMC/EMI effect, keep the [[NeoScan]] box as far away from the DUT as possible.
</li>
<li>
Follow standard electrostatic-discharge precaution, including grounding yourself prior to making cable connections to the system. A ground strap provides the most effective grounding and minimizes the likelihood of electrostatic damage.
</li>
<li>
Handle the probes and the PM fibers with extreme care. 
</li>
<li>
Gently clean and attach the appropriate fiber connectors to the correct fiber port of the [[NeoScan]] system.
</li>
<li>
Do not excessively pull or bend the fiber.
</li>
<li>
The probe tip is extremely fragile. Do not strike the probe tip. Always keep the probes in a safe place. 
</li>
<li>
Keep the cables and the fibers handy in safe positions, but out of the way and untangled.
</li>
<li>
Always use an SMA torque wrench when connecting the SMA connectors.
</li>
<li>
Do not over-torque the microwave SMA connectors.
</li>
<li>
Do not over-tighten the optical connectors.
</li>
</ul>

=== Installing the [[NeoScan]] System ===

[[NeoScan]] optical mainframe is enclosed in a 4U case with dimensions of 24”(H) x 17”(L) x 13” (W) (61cm x 43cm x 33cm). The instrument weighs 60 pounds (27kg) and contains the entire optical system, control systems, and power conditioning circuits required for electric field measurements. It is packaged in foam. Open the cardboard box and remove the layers of foam. Care must be taken to ensure the optical connectors, the SMA connectors, and the USB connectors on the rear panel are not damaged. Remove the fiber port protection caps and keep safe for reuse when repacking the instrument. The instrument box should contain the corresponding power cord, cables and etc.

Unpack the control computer (surface) and the computer holder. Attach the computer holder to the [[NeoScan]] front panel with the screws. Pull up the Holder Lock part on the top left. Place the control computer inside the computer holder. Pull down the Holder Lock part and lock it (Figure 2.1)

<center>[[Image:neoscanfig_2_1.png|thumb|center|650px|Figure 2.1: Installing NeoScan control computer.]]</center>

=== Installing [[NeoScan]] Translation Stage ===

Unpack the [[NeoScan]] translation stage components. To install (see Appendix A-l):

<ol>
<li>
Place the Y Linear Translation Stage on a stable flat table, preferably an optical table.
</li>
<li>
Mount the X Linear Translation Stage on the Y Linear Translation Stage using four screws as shown by red screws in Figure 2.2.
</li>
<li>
Mount the Plate on the X Linear Translation Stage. Fasten its four edges with screws as indicated by green arrows in Figure 2.2.
</li>
<li>
Place the X, Y, and Z Miniature Translation Stages on the front edge of the Optical Plate and fasten its four edges with screws as indicated by arrows in Figure 2.2.
</li>
<li>
Attach the Plastic Probe Fixture to the XYZ Miniature Translation Stage.
</li>
</ol>

<center>[[Image:neoscanfig_2_2.png|thumb|center|650px|Figure 2.2: Installing NeoScan Translation Stage.]]</center>

=== Unpacking the EO Probes ===

The [[NeoScan]] probes are extremely sensitive and fragile components. Use extreme caution whenever operating them. EO probes have been packed in separate boxes (Figure 2.3). The probes are delicate, care must be taken to ensure that the fiber and probe tip are not bent hard or dropped. The probe heads are placed in foam and the probes are housed in a box surrounded by bubble wrap on all sides.

To unpack, open the box top. Remove the visible bubble wrap and remove the entire foam structure from the box. Cut the tape holding the foam structure halves together and remove the top. Remove any bubble wrap in the foam structure. Remove the cardboard covering the probe tip and any small pieces of foam holding the EO Probe down in the foam.

<center>
<table>
<tr>
<td>
[[Image:neoscanfig_2_3.png|thumb|center|350px|Figure 2.3: A NeoScan packing box with one probe.]]
</td>
<td>
</td>
<td>
</td>
<td>
</td>
<td>
[[Image:neoscanfig_2_4.png|thumb|center|500px|Figure 2.4: How to remove a probe from foam and holding an EO probe and the PM fiber.]]
</td>
</tr>
</table>
</center>

To remove a probe and the fiber from the box:

<ol>
<li>
Carefully press the both sides of the foam near the probe head, carefully un-wedge the probe from its slot, and then lift the probe. Figure 2.4 shows a picture how to remove a probe.
</li>
<li>
Carefully remove the probe from the foam, making sure to grasp the probe glass tube and not the probe tip, as this may damage the EO probe.
</li>
<li>
While holding the probe from its glass tube and keep the fiber sheath in your hand, avoid stretching the white plastic shield part of the fiber. Do not pull the plastic shield part hard.
</li>
</ol>

=== Handling the Probes and the Fibers ===

The Probes and the fibers are made of a very pure, sensitive, and expensive materials. Treat them with care. Unwind a fiber gently and work out any tangles carefully.

<ul>
<li>
DO NOT pull hard the fiber.
</li>
<li>
DO NOT bend the fiber to a radius smaller than 4” (10 cm).
</li>
<li>
DO NOT strike the probe tip.
</li>
</ul>

Remove the protective cap on the optical fiber cable connector. Connectors should be cleaned before interconnection. Any dirt or contamination can damage the connector or degrade performance. In other words, fiber optic connectors should to be cleaned every time they are mated and unmated. Use a dry cleaning cloth (reel-based cassette cleaner) to remove dirt, dust, and oil from connector end faces (Figure 2.5). You can also carefully clean a dirty fiber connector with isopropyl alcohol (IPA) and then dry with FIS fiber optic cleaner.

<center>
[[Image:neoscanfig_2_5.png|thumb|center|600px|Figure 2.5: Cleaning a connector end face using a dry cleaning cloth reel-based cassette cleaner.]]
</center>

=== Connecting the Probe to [[NeoScan]] Optical Mainframe ===

The probe is coupled with a 10-meter-long PM fiber and connects to the optical mainframe with a FC/APC optical fiber connector. Remove the APC protection caps and keep safe for reuse when repacking the instrument. Gently clean and attach the appropriate fiber connectors to the correct fiber ports of the [[NeoScan]] system. There is a pre-aligned (slow or fast axis) adjustable key connectors for the PM axis alignment across a connection. Make sure the key is aligned in the slot properly before tightening, see Figure 2.6.

<center>[[Image:neoscanfig_2_6.png|thumb|center|600px|Figure 2.6: PM Fiber Optics and Connectors.]]</center>

=== Quick Test of the [[NeoScan]] System ===

As a quick system test:

<ol>
<li>
Plug in the [[NeoScan]] optical mainframe power cord into an electrical receptacle and turn it on.
</li>
<li>
Connect control computer AC power adapter and turn on the control computer.
</li>
<li>
Connect USB multi-port Hub AC power adapter to the power.
</li>
<li>
Connect the [[NeoScan]] Optical Mainframe USB Interface Port on the rear panel to a port on the USB Hub, then connect the control computer USB Interface Port to another port on the USB Hub. The USB Hub is a plug and play device.
</li>
<li>
Attach the appropriate fiber connectors to the correct fiber ports of the [[NeoScan]] system (Probe 1, Probe 2, or Probe 3), see section 2.6.
</li>
<li>
[[Image:icon_OBM.png|right|]] Open the [[NeoScan]] Optical Bench Manager program. The [[NeoScan]] Optical Bench Manager program is a Labview-Based System Operation which monitors the system status and the total return and polarization optical powers (see section 3.1 for more details). It is accessible through the desktop or Windows Explorer by double clicking on NeoScanOBM icon [[Image:icon_OBM_small.png]] as shown in Figure 2.7. The program will start running as shown in Figure 2.8.
</li>
</ol>

<center>
[[Image:neoscanfig_2_7.png|thumb|center|500px|Figure 2.7: NeoScan Program Group in or Windows Explorer.]]
</center>

When the program starts, the system should detect the total return power and polarization power and display their graphs over time and show their numerical values in mW, see Figure 2.8. The green “Probe Detected” indicator light will indicate that the probe is connected to the correct channel. Otherwise, if either the total return power or the polarization power is too low (less than 0.3 mW), the information panel will remind the users to correct the problem. This can be the case if the probe is not connected or is defective or there is a problem with the [[NeoScan]] system (Figure 2.9). Select the channel number you want to check using the dropdown list labeled “Select Channel.”

<center>
[[Image:neoscanfig_2_8.png|thumb|center|650px|Figure 2.8: The total return power and polarization power of delivered beam to optical probe.]]
 
[[Image:neoscanfig_2_9.png|thumb|center|650px|Figure 2.9: NeoScan Optical Bench Manager indicating that the total return power is too low.]]
</center>

=== Deploying the Probe on a Probe Fixture ===

During the scan or optimization process, the probe will be mounted on a plastic probe fixtures. The plastic probe fixtures has been mounted on translation stage by a single cap screw and holds the probe (Figure 2.10). The probe is positioned inside the gap located on probe holder and is secured by a cap which is fastened by screws as shown in Figure 2.11.

<center>
[[Image:neoscanfig_2_10.png|thumb|center|650px|Figure 2.10: Mounting the plastic probe fixtures on a moving translation stage.]]
</center>

<ol>
<li>
Set up the 2-axis translation stage on a stable flat table, an optical table is preferred.
</li>
<li>
Mount the plastic probe fixtures on the Z linear translation stage using the screw.
</li>
<li>
Loosen all screws of the cubic probe holder. Lift the cap and rest the probe holder on a flat horizontal flat surface. Gently insert the probe into the gap in the plastic probe holder in such a way that that about 0.6” (1.5cm) of the probe comes out from the either ends of the gap (Figure 2.11).
</li>
<li>
While the probe is sitting inside the gap, place the cap on the probe holder and secure it by fastening the four plastic screws. Make sure it is tight is enough so that the probe does not slip out of the gap. Yet, do not tighten hard since it may break the probe glass. Tighten the screws until you feel that you are not able to rotate the probe by your fingers.
</li>
<li>
Place the cube holder inside the probe fixture head in such a way that the probe passes through the existing hole (Figure 2.12). Make sure the probe does not hit the edges of the hole, otherwise, it may break and the crystal may fall off.
</li>
<li>
To avoid bending the soft plastic shield of the fiber, pass the fiber through the top of the probe fixture using regular (Scotch) adhesive tapes as shown in Figure 2.13.
Important: When pulling out the probe from the hole, make sure the probe is positioned vertically and the probe tip does not touch the edges of the hole.
</li>
</ol>

<center>
[[Image:neoscanfig_2_11.png|thumb|center|650px|Figure 2.11: Placing the probe inside the probe holder.]]
 
[[Image:neoscanfig_2_12.png|thumb|center|650px|Figure 2.12: Inserting the probe holder inside the probe fixture head.]]
</center>

Two black markers on the tangential probe indicate the E-field sensitivity direction (probes’ polarization direction). They should be oriented along the electric field in order to detect the maximum signal, see Figure 2.14.

<center>
[[Image:neoscanfig_2_13.png|thumb|center|650px|Figure 2.13: Securing the probe on the probe fixture.]]
 
[[Image:neoscanfig_2_14.png|thumb|center|650px|Figure 2.14: Black markers on the tangential probe indicating the E-field sensitivity direction (probes’ polarization direction).]]
</center>

EM.Tempo Tutorial Lesson 7: Modeling a Periodic Frequency Selective Surface

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EM.Libera Tutorial Lesson 1: Analyzing a Center-Fed Resonant Dipole Antenna

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EM.Libera Tutorial Lesson 2: Designing a Yagi-Uda Dipole Array

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EM.Libera Tutorial Lesson 6: Analyzing Scattering from a Parabolic Dish Reflector

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EM.Picasso Lesson 5: Modeling Periodic Frequency Selective Surfaces

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EM.Tempo Tutorial Lesson 14: Simulating a Monopole Antenna Interacting with a Human Head Model

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NeoScan Manual Part A: Getting Started

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Asabet:

== Overview ==

=== General Overview ===

[[NeoScan]]® real-time field measurement and scanning system is a turnkey, electric or magnetic field probe and measurement system. It can be configured as a near-field scanning system for mapping aperture-level field distributions with minimal invasiveness to the device or system under test. Or it can be used as a real-time field probe system for sensing or detecting electric and magnetic fields in a variety of media.

The [[NeoScan]] system can be used as an essential tool for test and evaluation of antennas and phased array systems and is particularly useful for phase characterization and calibration. Unlike conventional near-field scanning systems that utilize metallic radiators to pick up the fields, [[NeoScan]] probes are non-metallic, operating based on electro-optic (EO) or magneto-optic (MO) effects. Its field probes feature extremely small EO or MO crystals mounted at the tip of an optical fiber. The combination of the small probe size and absolutely non-metallic parts leads to the ultimate radio frequency (RF) non-invasiveness.

[[NeoScan]] provides detailed field maps of passive and active devices and circuits including RFIC’s and MMIC’s. Such invaluable information can effectively be used for design validation, model verification, diagnostics and fault isolation or performance evaluation of various parts of RF systems. It is also an alternative compact range for measurement of far-field radiation patterns of antennas and arrays, dispensing with a costly anechoic chamber. The system can be used in real-time, polarimetric and coherent sensing and probing of wideband signals and pulses, EMC/EMI testing, and medical device measurements and characterization of biological environments. The [[NeoScan]] system can be configured in a multi-channel architecture for simultaneous field measurement at multiple points and locations. Different channels can measure different polarizations in a coherent manner.

=== Features of the [[NeoScan]] System ===

<ul>
<li>
Wideband operational bandwidth: few MHz to 20GHz, measuring repetitive signals with 50-ps rise time, 10-ns duration, and 80 V/m amplitude with a 10% to 90% definition
</li>
<li>
Hardware system sensitivity requirements of 2 V/m/√Hz
</li>
<li>
Electric field real-time measurement capability
</li>
<ul>
<li>
Multi-port Integrated FC/APC Input
</li>
<li>
Multi-port SMA RF Output
</li>
</ul>
<li>
Scanning measurement capability
</li>
<ul>
<li>
Simultaneous measurement of amplitude and phase
</li>
<li>
Scanning area up to 80” x 80” (2 x 2 m)
</li>
<li>
0.1 micron resolution linear encoder
</li>
</ul>
<li>
Integrated Optical Bench:
</li>
<ul>
<li>
1550 nm Diode Laser (laser beam spot < 100 μm sq)
</li>
<li>
Polarization Controller and Analyzer
</li>
<li>
AC and DC photodetectors
</li>
</ul>
<li>
Very wide dynamic range (>70 dB) and linear response range in 1 V/m to 2 MV/m
</li>
<li>
One normal field probe and two tangential field probe, each having a FC/APC optical fiber connector (Includes 10 m PM fibers on all probes)
</li>
<li>
System Operation, Monitoring, and Optimization Software
</li>
</ul>

=== General Description ===

The [[NeoScan]] real-time field measurement & scanning system provides an entirely new capability for the measurement of high-intensity electric fields. This technology is based on the Pockel’s effect which measures the phase-retardance of an optical beam due to an impinging electric field. This electro-optic effect is observed in non-centrosymmetric crystals when an electric field is directed along certain crystal axes causes a change in the indices of refraction encountered by an incident optical beam. Figure 1.1 shows the basic principle of the electro-optic effect. The electro-optic effect provides a means of modulating the phase or intensity of the optical radiation. In another sense, this effect also makes it possible to detect the presence of an electric field impinging on the crystal. The polarization of an optical beam travelling through a crystal is altered by the electric field in that crystal. The comparison of polarization states allows determination of the amplitude and phase of the existing RF electric field. Since the electro-optic sensing phenomenon relies on small displacements of the atomic crystal structure, the response time of the process is extremely short. This short response time makes it possible to measure high-frequency electric fields up to the terahertz regime.

<center>[[Image:neoscanfig_1_1.png|thumb|center|400px|Figure 1.1: EO modulation of an optical signal.]]</center>

A typical EO probe is composed of an optical fiber affixed with an EO crystal coated with a dielectric reflection layer on its bottom surface as shown in Figure 1.2. These probes have very delicate optical interconnects and extreme care must be taken in handling the probes to prevent excessive shock, bending and out of plane stresses.

Due to its broad measurement bandwidth and high spatial resolution, the EO measurement technique is a promising means to characterize RF systems such as microwave and millimeter-wave integrated circuits, HPM sources and systems, and large-scale active arrays and other radiating structures. Unlike the conventional electrical measurement techniques which require some type of metal structure for the resonant detection of an RF signal, [[NeoScan]]’s unique real-time EO electric field measurement method requires no metal components. As a result, the field perturbation caused by introducing metal within the vicinity of a device under test (DUT) is significantly reduced.

Figure 1.3 shows the electric and magnetic fields distribution of a traveling RF wave with a normal probe shown in typical orientation. To detect the maximum electric field in this configuration, the propagation direction of the optical beam of the probe should be parallel to the E-field direction. In general, a normal EO probe is only sensitive to the electric field component parallel to the probe handle, whereas a tangential probe is sensitive to the electric field component perpendicular to the probe handle. Yet, the E-field sensitivity of a tangential probe depends on its crystal orientation sitting on its tip.

<center>
<table>
<tr>
<td>
[[Image:neoscanfig_1_2.png|thumb|left|380px|Figure 1.2: A single-axis EO probe. The probe tip is protected by Epoxy to
provide nearly identical performance to a bare probe.]]
</td>
<td>
</td>
<td>
</td>
<td>
</td>
<td>
[[Image:neoscanfig_1_3.png|thumb|right|480px|Figure 1.3: Illustrates a normal field measurement as oriented with respect to an incident electric field. The normal probe is oriented with the probe normal to direction of propagation.]]
</td>
</tr>
</table>
</center>

A low noise 1550 nm laser diode is used as optical beam source. The optical connections are fiber-based. The beam is delivered to an optical probe. The polarization of the beam is modulated through an electro-optic crystal on the probe tip. The modulated beam is reflected back into the fiber, and back to the mainframe for analysis. An optical analyzer converts the polarization change of the beam into an amplitude change. The amplitude is linearly proportional to the strength of the external electric field at the probe-crystal location. The equation E=αV is used to calculate the electric field, where α is the calibration factor, or the slope between the electric field E (in V/m) and the measured EO signal V (in V/m/uV). For instance, for a calibration factor of 1.082 V/m/uV. a measured EO signal of 1000 uV (0.001 V), corresponds to and electric field of 1.082 V/m/uV x 1000 V = 1082 V/m.

<center>[[Image:neoscanfig_1_4.png|thumb|center|480px|Figure 1.4: An example of a real time measurement of a 6.6 nsec pulse with 10 kV/m peak field strength. The upper trace shown on the oscilloscope is the input signal, and the lower trace is the measured signal.]]</center>

Due to the fast response of the EO crystal, it is possible to measure extremely high-bandwidth signals with the normal SNR limitations of wideband signal detection. Using this capability, EMAG Technologies Inc. has developed the world’s first fiber-based real-time polarimetric electric field sensor system – [[NeoScan]] – for the measurement of high-power microwave signals. Figure 1.4 is an example of a real time measurement of a 6.6 nsec pulse with 10 kV/m peak field strength. The upper trace shown on the oscilloscope is the received signal, and the lower trace is the detected signal.

The [[NeoScan]] system is capable of measuring signals with bandwidths up to 20 GHz and signal levels as low as 1 V/m for optical probes with a 10 m PM fiber. Because the optical probes are free of metallic parts, it is possible to measure extremely high-field strengths since there are no free electron surfaces to generate arcing. The [[NeoScan]] can measure fields up at least 2 MV/m and possibly higher.

=== System Overview ===

The [[NeoScan]] real-time field measurement and scanning system consists of:

<ul>
<li>
An optical mainframe with a touchscreen control computer that can be used for either real-time high power microwave measurement or E-field scanning as shown in Figure 1.5.

<center>
<table>
<tr>
<td>
[[Image:neoscanfig_1_5.png|thumb|center|600px|Figure 1.5: The NeoScan Optical Mainframe System.]]
</td>
</tr>
<tr>
<td>
[[Image:neoscanfig_1_6.png|thumb|center|600px|Figure 1.6: NeoScan 2-axis translation stage.]]
</td>
</tr>
</table>
</center>

The power switch on the back will turn the system and the laser on or off. It is recommended to turn the [[NeoScan]] system on at least 30 minutes before any operation for warm-up. A USB port is used to communicate with control computer. The “Signal Out” channels can be used for real-time measurements. The RF signal can be displayed either on a high resolution oscilloscope or a spectrum analyzer. The channels can also be configured for near-field scanning measurement with a U-jumper SMA Cables. The scanning configuration can measure both amplitude and the phase of the signal with a Lock-in Amplifier.
</li>
<li>
One normal probe and two tangential probes
</li>
<li>
One 2-axis translation stage with a stage controller for scanning operation (Figure 1.6)
</li>
<li>
One RF Lock-In Amplifier
</li>
<li>
One GPIB-USB cable for instrument control
</li>
<li>
One USB multi-port Hub for instrument control
</li>
<li>
The [[NeoScan]] system control software package
</li>
</ul>

Additional equipment needed to configure [[NeoScan]] as a field scanning system include:
<ul>
<li>
A signal generator to provide the local oscillator (LO) signal for [[NeoScan]]’s output mixer
</li>
<li>
A signal generator to provide a 100 MHz reference signal to lock-in amplifier
</li>
</ul>

==== The Front Panel of [[NeoScan]] Optical Mainframe ====

The front panel is the main interface to the system. It contains a control computer that that runs Microsoft Windows, and controls, commands, and monitors the [[NeoScan]] system’s status (Figure 1.7).

<center>
[[Image:neoscanfig_1_7.png|thumb|center|650px|Figure 1.7: The Front panel of NeoScan Optical Mainframe.]]
</center>

==== The Rear Panel of [[NeoScan]] Optical Mainframe ====

The rear panel is the interface to the instruments and provides complete access for external control, optical fiber excitation, and RF signal output (Figure 1.8). It contains:
<ul>
<li>
A USB interface port for computer control of the system
</li>
<li>
The power switch and red LED Power indicator for turning on or off the system
</li>
<li>
The AC power cord. The AC power requirement is 110V, 60Hz with a 250V 2A fuse
</li>
<li>
Three SMA connector for RF output (Signal Out)
</li>
<li>
Three fiber FC/APC connector (Probe)
</li>
<li>
SMA connectors for frequency scanning mixer includes: IF Out, LO In, and RF In
</li>
<li>
SMA connectors for IF Switch Out and IF Switch Ins
</li>
<li>
An electric fan
</li>
</ul>

<center>
[[Image:neoscanfig_1_8.png|thumb|center|650px|Figure 1.8: NeoScan Real Panel.]]
</center>

=== Acronyms and Abbreviations ===

<table>
<tr>
<td>
</td>
<td>
2D: 2-dimentional
 
3D: 3-dimentional

A/D: Analog-to-Digital
 
AC: Alternating Current
 
AFCW: Air Filled Coax Waveguide

BSO: Bismuth Silicon Oxide

CAL.: Calibration
 
CH/Ch: Channel
 
cm: centimeter
 
CP: Circular polarization
 
CW: Continuous Wave (Pure Sine Wave)

D/A: Digital-to-Analog
 
DAQ: Data Acquisition
 
dB: Decibel
 
dBm: Decibel power referenced to milliwatts
 
DBR: Distributed Bragg reflector
 
DC: Direct Current
 
DUT: Device under test

EMC: Electromagnetic Compatibility
 
EMI: Electromagnetic Interference
 
EO: Electro-Optic

FC/APC: Ferrule Connector / Angle-polished connection, a fiber-optic connector
 
FEP: Fluorinated ethylene propylene, a copolymer of hexafluoropropylene and tetrafluoroethylene

GPIB: General Purpose Interface Bus
 
GRIN: Graded index lens

Hz: Hertz

IF: Intermediate Frequency/The low frequency signal port of a mixer.

LED: Light emitting diode
 
LNA: Low-Noise Amplifier
 
LO: Local Oscillator/The carrier input port of a mixer
 
LTO: Lithium Tantalate (LiTaO3)

m: meter
 
mm: millimeter
 
msec: millisecond (ms)
 
mW: milliwatt
 
MMIC: Monolithic Microwave Integrated Circuits
 
MO: Magneto-Optic

nsec: nanosecond (ns)

PD: Photodetector
 
PM: Polarization maintaining
 
PM: Phase Modulation
 
Pol. Ctrl.: Polarization controller

Ref Level: Reference Level
 
RF: Radio Frequency/The high frequency signal port of a mixer
 
RFI: Radio Frequency Interference
 
RFIC: Radio Frequency Integrated Circuits
 
RT: Real-time

s: Second (sec)
 
SA: Spectrum Analyzer
 
SBIR: Small Business Innovative Research
 
SMA: Subminiature connector ‘A’, a coaxial RF connector
 
SNR: Signal-to-noise ratio (signal power over noise power)

TEM: Transverse Electromagnetic
 
TEM cell: A small chamber generating a consistent electromagnetic field for testing small RF devices

USB: Universal Serial Bus
 
um: Micrometer (m)
 
uV: Microvolt (V)

V/m: Volt/meter
 
V: Volt
</td>
</tr>
</table>

== NeoScan Probe Installation ==

=== Shipping & Handling Precautions ===

The [[NeoScan]] system contains extremely sensitive and fragile components. Use extreme caution whenever operating this system. Do not attempt to service or adjust or install substitute parts to its components. Please contact EMAG Technologies Inc. for service and more information.

In spite of its sophisticated capabilities, the [[NeoScan]] system is easy to learn and operate. You can start using the system within hours. Below are the procedures to help you get started using [[NeoScan]]. We highly recommend that you complete chapters 2 and 3 of [[NeoScan]] and familiarize yourself with its basic functions before attempting to run the system. Turn the [[NeoScan]] system on at least 30 minutes before any operation for warm-up. Before getting started, consider the following precautions:

<ul>
<li>
The system operates from a 100V or 120V nominal AC power source having a line frequency of 50 or 60 Hz. Before connecting the power cord to a power source, verify that the AC input voltage value is correct.
</li>
<li>
[[NeoScan]] real-time field measurement and scanning system contains a 40 mW laser diode emitting Class 3B laser radiation at ~1550 nm. The direct output power from the fiber port of each probe channel on the front panel is less than 10 mW. The beam at 1550 nm is invisible to human being and the invisible beam can be hazardous if directed at the eye. Direct exposure of eye to the invisible laser beam must be avoided.
</li>
<li>
The fans in [[NeoScan]] optical mainframe are required to maintain proper operation. Do not block the vents in the frame box.
</li>
<li>
In order to avoid EMC/EMI effect, keep the [[NeoScan]] box as far away from the DUT as possible.
</li>
<li>
Follow standard electrostatic-discharge precaution, including grounding yourself prior to making cable connections to the system. A ground strap provides the most effective grounding and minimizes the likelihood of electrostatic damage.
</li>
<li>
Handle the probes and the PM fibers with extreme care. 
</li>
<li>
Gently clean and attach the appropriate fiber connectors to the correct fiber port of the [[NeoScan]] system.
</li>
<li>
Do not excessively pull or bend the fiber.
</li>
<li>
The probe tip is extremely fragile. Do not strike the probe tip. Always keep the probes in a safe place. 
</li>
<li>
Keep the cables and the fibers handy in safe positions, but out of the way and untangled.
</li>
<li>
Always use an SMA torque wrench when connecting the SMA connectors.
</li>
<li>
Do not over-torque the microwave SMA connectors.
</li>
<li>
Do not over-tighten the optical connectors.
</li>
</ul>

=== Installing the [[NeoScan]] System ===

[[NeoScan]] optical mainframe is enclosed in a 4U case with dimensions of 24”(H) x 17”(L) x 13” (W) (61cm x 43cm x 33cm). The instrument weighs 60 pounds (27kg) and contains the entire optical system, control systems, and power conditioning circuits required for electric field measurements. It is packaged in foam. Open the cardboard box and remove the layers of foam. Care must be taken to ensure the optical connectors, the SMA connectors, and the USB connectors on the rear panel are not damaged. Remove the fiber port protection caps and keep safe for reuse when repacking the instrument. The instrument box should contain the corresponding power cord, cables and etc.

Unpack the control computer (surface) and the computer holder. Attach the computer holder to the [[NeoScan]] front panel with the screws. Pull up the Holder Lock part on the top left. Place the control computer inside the computer holder. Pull down the Holder Lock part and lock it (Figure 2.1)

<center>[[Image:neoscanfig_2_1.png|thumb|center|650px|Figure 2.1: Installing NeoScan control computer.]]</center>

=== Installing [[NeoScan]] Translation Stage ===

Unpack the [[NeoScan]] translation stage components. To install (see Appendix A-l):

<ol>
<li>
Place the Y Linear Translation Stage on a stable flat table, preferably an optical table.
</li>
<li>
Mount the X Linear Translation Stage on the Y Linear Translation Stage using four screws as shown by red screws in Figure 2.2.
</li>
<li>
Mount the Plate on the X Linear Translation Stage. Fasten its four edges with screws as indicated by green arrows in Figure 2.2.
</li>
<li>
Place the X, Y, and Z Miniature Translation Stages on the front edge of the Optical Plate and fasten its four edges with screws as indicated by arrows in Figure 2.2.
</li>
<li>
Attach the Plastic Probe Fixture to the XYZ Miniature Translation Stage.
</li>
</ol>

<center>[[Image:neoscanfig_2_2.png|thumb|center|650px|Figure 2.2: Installing NeoScan Translation Stage.]]</center>

=== Unpacking the EO Probes ===

The [[NeoScan]] probes are extremely sensitive and fragile components. Use extreme caution whenever operating them. EO probes have been packed in separate boxes (Figure 2.3). The probes are delicate, care must be taken to ensure that the fiber and probe tip are not bent hard or dropped. The probe heads are placed in foam and the probes are housed in a box surrounded by bubble wrap on all sides.

To unpack, open the box top. Remove the visible bubble wrap and remove the entire foam structure from the box. Cut the tape holding the foam structure halves together and remove the top. Remove any bubble wrap in the foam structure. Remove the cardboard covering the probe tip and any small pieces of foam holding the EO Probe down in the foam.

<center>
<table>
<tr>
<td>
[[Image:neoscanfig_2_3.png|thumb|center|350px|Figure 2.3: A NeoScan packing box with one probe.]]
</td>
<td>
</td>
<td>
</td>
<td>
</td>
<td>
[[Image:neoscanfig_2_4.png|thumb|center|500px|Figure 2.4: How to remove a probe from foam and holding an EO probe and the PM fiber.]]
</td>
</tr>
</table>
</center>

To remove a probe and the fiber from the box:

<ol>
<li>
Carefully press the both sides of the foam near the probe head, carefully un-wedge the probe from its slot, and then lift the probe. Figure 2.4 shows a picture how to remove a probe.
</li>
<li>
Carefully remove the probe from the foam, making sure to grasp the probe glass tube and not the probe tip, as this may damage the EO probe.
</li>
<li>
While holding the probe from its glass tube and keep the fiber sheath in your hand, avoid stretching the white plastic shield part of the fiber. Do not pull the plastic shield part hard.
</li>
</ol>

=== Handling the Probes and the Fibers ===

The Probes and the fibers are made of a very pure, sensitive, and expensive materials. Treat them with care. Unwind a fiber gently and work out any tangles carefully.

<ul>
<li>
DO NOT pull hard the fiber.
</li>
<li>
DO NOT bend the fiber to a radius smaller than 4” (10 cm).
</li>
<li>
DO NOT strike the probe tip.
</li>
</ul>

Remove the protective cap on the optical fiber cable connector. Connectors should be cleaned before interconnection. Any dirt or contamination can damage the connector or degrade performance. In other words, fiber optic connectors should to be cleaned every time they are mated and unmated. Use a dry cleaning cloth (reel-based cassette cleaner) to remove dirt, dust, and oil from connector end faces (Figure 2.5). You can also carefully clean a dirty fiber connector with isopropyl alcohol (IPA) and then dry with FIS fiber optic cleaner.

<center>
[[Image:neoscanfig_2_5.png|thumb|center|600px|Figure 2.5: Cleaning a connector end face using a dry cleaning cloth reel-based cassette cleaner.]]
</center>

=== Connecting the Probe to [[NeoScan]] Optical Mainframe ===

The probe is coupled with a 10-meter-long PM fiber and connects to the optical mainframe with a FC/APC optical fiber connector. Remove the APC protection caps and keep safe for reuse when repacking the instrument. Gently clean and attach the appropriate fiber connectors to the correct fiber ports of the [[NeoScan]] system. There is a pre-aligned (slow or fast axis) adjustable key connectors for the PM axis alignment across a connection. Make sure the key is aligned in the slot properly before tightening, see Figure 2.6.

<center>[[Image:neoscanfig_2_6.png|thumb|center|600px|Figure 2.6: PM Fiber Optics and Connectors.]]</center>

=== Quick Test of the [[NeoScan]] System ===

As a quick system test:

<ol>
<li>
Plug in the [[NeoScan]] optical mainframe power cord into an electrical receptacle and turn it on.
</li>
<li>
Connect control computer AC power adapter and turn on the control computer.
</li>
<li>
Connect USB multi-port Hub AC power adapter to the power.
</li>
<li>
Connect the [[NeoScan]] Optical Mainframe USB Interface Port on the rear panel to a port on the USB Hub, then connect the control computer USB Interface Port to another port on the USB Hub. The USB Hub is a plug and play device.
</li>
<li>
Attach the appropriate fiber connectors to the correct fiber ports of the [[NeoScan]] system (Probe 1, Probe 2, or Probe 3), see section 2.6.
</li>
<li>
[[Image:icon_OBM.png|right|]] Open the [[NeoScan]] Optical Bench Manager program. The [[NeoScan]] Optical Bench Manager program is a Labview-Based System Operation which monitors the system status and the total return and polarization optical powers (see section 3.1 for more details). It is accessible through the desktop or Windows Explorer by double clicking on NeoScanOBM icon [[Image:icon_OBM_small.png]] as shown in Figure 2.7. The program will start running as shown in Figure 2.8.
</li>
</ol>

<center>
[[Image:neoscanfig_2_7.png|thumb|center|500px|Figure 2.7: NeoScan Program Group in or Windows Explorer.]]
</center>

When the program starts, the system should detect the total return power and polarization power and display their graphs over time and show their numerical values in mW, see Figure 2.8. The green “Probe Detected” indicator light will indicate that the probe is connected to the correct channel. Otherwise, if either the total return power or the polarization power is too low (less than 0.3 mW), the information panel will remind the users to correct the problem. This can be the case if the probe is not connected or is defective or there is a problem with the [[NeoScan]] system (Figure 2.9). Select the channel number you want to check using the dropdown list labeled “Select Channel.”

<center>
[[Image:neoscanfig_2_8.png|thumb|center|650px|Figure 2.8: The total return power and polarization power of delivered beam to optical probe.]]
 
[[Image:neoscanfig_2_9.png|thumb|center|650px|Figure 2.9: NeoScan Optical Bench Manager indicating that the total return power is too low.]]
</center>

=== Deploying the Probe on a Probe Fixture ===

During the scan or optimization process, the probe will be mounted on a plastic probe fixtures. The plastic probe fixtures has been mounted on translation stage by a single cap screw and holds the probe (Figure 2.10). The probe is positioned inside the gap located on probe holder and is secured by a cap which is fastened by screws as shown in Figure 2.11.

<center>
[[Image:neoscanfig_2_10.png|thumb|center|650px|Figure 2.10: Mounting the plastic probe fixtures on a moving translation stage.]]
</center>

<ol>
<li>
Set up the 2-axis translation stage on a stable flat table, an optical table is preferred.
</li>
<li>
Mount the plastic probe fixtures on the Z linear translation stage using the screw.
</li>
<li>
Loosen all screws of the cubic probe holder. Lift the cap and rest the probe holder on a flat horizontal flat surface. Gently insert the probe into the gap in the plastic probe holder in such a way that that about 0.6” (1.5cm) of the probe comes out from the either ends of the gap (Figure 2.11).
</li>
<li>
While the probe is sitting inside the gap, place the cap on the probe holder and secure it by fastening the four plastic screws. Make sure it is tight is enough so that the probe does not slip out of the gap. Yet, do not tighten hard since it may break the probe glass. Tighten the screws until you feel that you are not able to rotate the probe by your fingers.
</li>
<li>
Place the cube holder inside the probe fixture head in such a way that the probe passes through the existing hole (Figure 2.12). Make sure the probe does not hit the edges of the hole, otherwise, it may break and the crystal may fall off.
</li>
<li>
To avoid bending the soft plastic shield of the fiber, pass the fiber through the top of the probe fixture using regular (Scotch) adhesive tapes as shown in Figure 2.13.
Important: When pulling out the probe from the hole, make sure the probe is positioned vertically and the probe tip does not touch the edges of the hole.
</li>
</ol>

<center>
[[Image:neoscanfig_2_11.png|thumb|center|650px|Figure 2.11: Placing the probe inside the probe holder.]]
 
[[Image:neoscanfig_2_12.png|thumb|center|650px|Figure 2.12: Inserting the probe holder inside the probe fixture head.]]
</center>

Two black markers on the tangential probe indicate the E-field sensitivity direction (probes’ polarization direction). They should be oriented along the electric field in order to detect the maximum signal, see Figure 2.14.

<center>
[[Image:neoscanfig_2_13.png|thumb|center|650px|Figure 2.13: Securing the probe on the probe fixture.]]
 
[[Image:neoscanfig_2_14.png|thumb|center|650px|Figure 2.14: Black markers on the tangential probe indicating the E-field sensitivity direction (probes’ polarization direction).]]
</center>

NeoScan Manual Part A: Getting Started

2022-08-26T14:01:16Z

Asabet:

== Overview ==

=== General Overview ===

[[NeoScan]]® real-time field measurement and scanning system is a turnkey, electric or magnetic field probe and measurement system. It can be configured as a near-field scanning system for mapping aperture-level field distributions with minimal invasiveness to the device or system under test. Or it can be used as a real-time field probe system for sensing or detecting electric and magnetic fields in a variety of media.

The [[NeoScan]] system can be used as an essential tool for test and evaluation of antennas and phased array systems and is particularly useful for phase characterization and calibration. Unlike conventional near-field scanning systems that utilize metallic radiators to pick up the fields, [[NeoScan]] probes are non-metallic, operating based on electro-optic (EO) or magneto-optic (MO) effects. Its field probes feature extremely small EO or MO crystals mounted at the tip of an optical fiber. The combination of the small probe size and absolutely non-metallic parts leads to the ultimate radio frequency (RF) non-invasiveness.

[[NeoScan]] provides detailed field maps of passive and active devices and circuits including RFIC’s and MMIC’s. Such invaluable information can effectively be used for design validation, model verification, diagnostics and fault isolation or performance evaluation of various parts of RF systems. It is also an alternative compact range for measurement of far-field radiation patterns of antennas and arrays, dispensing with a costly anechoic chamber. The system can be used in real-time, polarimetric and coherent sensing and probing of wideband signals and pulses, EMC/EMI testing, and medical device measurements and characterization of biological environments. The [[NeoScan]] system can be configured in a multi-channel architecture for simultaneous field measurement at multiple points and locations. Different channels can measure different polarizations in a coherent manner.

=== Features of the [[NeoScan]] System ===

<ul>
<li>
Wideband operational bandwidth: few MHz to 20GHz, measuring repetitive signals with 50-ps rise time, 10-ns duration, and 80 V/m amplitude with a 10% to 90% definition
</li>
<li>
Hardware system sensitivity requirements of 2 V/m/√Hz
</li>
<li>
Electric field real-time measurement capability
</li>
<ul>
<li>
Multi-port Integrated FC/APC Input
</li>
<li>
Multi-port SMA RF Output
</li>
</ul>
<li>
Scanning measurement capability
</li>
<ul>
<li>
Simultaneous measurement of amplitude and phase
</li>
<li>
Scanning area up to 80” x 80” (2 x 2 m)
</li>
<li>
0.1 micron resolution linear encoder
</li>
</ul>
<li>
Integrated Optical Bench:
</li>
<ul>
<li>
1550 nm Diode Laser (laser beam spot < 100 μm sq)
</li>
<li>
Polarization Controller and Analyzer
</li>
<li>
AC and DC photodetectors
</li>
</ul>
<li>
Very wide dynamic range (>70 dB) and linear response range in 1 V/m to 2 MV/m
</li>
<li>
One normal field probe and two tangential field probe, each having a FC/APC optical fiber connector (Includes 10 m PM fibers on all probes)
</li>
<li>
System Operation, Monitoring, and Optimization Software
</li>
</ul>

=== General Description ===

The [[NeoScan]] real-time field measurement & scanning system provides an entirely new capability for the measurement of high-intensity electric fields. This technology is based on the Pockel’s effect which measures the phase-retardance of an optical beam due to an impinging electric field. This electro-optic effect is observed in non-centrosymmetric crystals when an electric field is directed along certain crystal axes causes a change in the indices of refraction encountered by an incident optical beam. Figure 1.1 shows the basic principle of the electro-optic effect. The electro-optic effect provides a means of modulating the phase or intensity of the optical radiation. In another sense, this effect also makes it possible to detect the presence of an electric field impinging on the crystal. The polarization of an optical beam travelling through a crystal is altered by the electric field in that crystal. The comparison of polarization states allows determination of the amplitude and phase of the existing RF electric field. Since the electro-optic sensing phenomenon relies on small displacements of the atomic crystal structure, the response time of the process is extremely short. This short response time makes it possible to measure high-frequency electric fields up to the terahertz regime.

<center>[[Image:neoscanfig_1_1.png|thumb|center|400px|Figure 1.1: EO modulation of an optical signal.]]</center>

A typical EO probe is composed of an optical fiber affixed with an EO crystal coated with a dielectric reflection layer on its bottom surface as shown in Figure 1.2. These probes have very delicate optical interconnects and extreme care must be taken in handling the probes to prevent excessive shock, bending and out of plane stresses.

Due to its broad measurement bandwidth and high spatial resolution, the EO measurement technique is a promising means to characterize RF systems such as microwave and millimeter-wave integrated circuits, HPM sources and systems, and large-scale active arrays and other radiating structures. Unlike the conventional electrical measurement techniques which require some type of metal structure for the resonant detection of an RF signal, [[NeoScan]]’s unique real-time EO electric field measurement method requires no metal components. As a result, the field perturbation caused by introducing metal within the vicinity of a device under test (DUT) is significantly reduced.

Figure 1.3 shows the electric and magnetic fields distribution of a traveling RF wave with a normal probe shown in typical orientation. To detect the maximum electric field in this configuration, the propagation direction of the optical beam of the probe should be parallel to the E-field direction. In general, a normal EO probe is only sensitive to the electric field component parallel to the probe handle, whereas a tangential probe is sensitive to the electric field component perpendicular to the probe handle. Yet, the E-field sensitivity of a tangential probe depends on its crystal orientation sitting on its tip.

<center>
<table>
<tr>
<td>
[[Image:neoscanfig_1_2.png|thumb|left|380px|Figure 1.2: A single-axis EO probe. The probe tip is protected by Epoxy to
provide nearly identical performance to a bare probe.]]
</td>
<td>
</td>
<td>
</td>
<td>
</td>
<td>
[[Image:neoscanfig_1_3.png|thumb|right|480px|Figure 1.3: Illustrates a normal field measurement as oriented with respect to an incident electric field. The normal probe is oriented with the probe normal to direction of propagation.]]
</td>
</tr>
</table>
</center>

A low noise 1550 nm laser diode is used as optical beam source. The optical connections are fiber-based. The beam is delivered to an optical probe. The polarization of the beam is modulated through an electro-optic crystal on the probe tip. The modulated beam is reflected back into the fiber, and back to the mainframe for analysis. An optical analyzer converts the polarization change of the beam into an amplitude change. The amplitude is linearly proportional to the strength of the external electric field at the probe-crystal location. The equation E=αV is used to calculate the electric field, where α is the calibration factor, or the slope between the electric field E (in V/m) and the measured EO signal V (in V/m/uV). For instance, for a calibration factor of 1.082 V/m/uV. a measured EO signal of 1000 uV (0.001 V), corresponds to and electric field of 1.082 V/m/uV x 1000 V = 1082 V/m.

<center>[[Image:neoscanfig_1_4.png|thumb|center|480px|Figure 1.4: An example of a real time measurement of a 6.6 nsec pulse with 10 kV/m peak field strength. The upper trace shown on the oscilloscope is the input signal, and the lower trace is the measured signal.]]</center>

Due to the fast response of the EO crystal, it is possible to measure extremely high-bandwidth signals with the normal SNR limitations of wideband signal detection. Using this capability, EMAG Technologies Inc. has developed the world’s first fiber-based real-time polarimetric electric field sensor system – [[NeoScan]] – for the measurement of high-power microwave signals. Figure 1.4 is an example of a real time measurement of a 6.6 nsec pulse with 10 kV/m peak field strength. The upper trace shown on the oscilloscope is the received signal, and the lower trace is the detected signal.

The [[NeoScan]] system is capable of measuring signals with bandwidths up to 20 GHz and signal levels as low as 1 V/m for optical probes with a 10 m PM fiber. Because the optical probes are free of metallic parts, it is possible to measure extremely high-field strengths since there are no free electron surfaces to generate arcing. The [[NeoScan]] can measure fields up at least 2 MV/m and possibly higher.

=== System Overview ===

The [[NeoScan]] real-time field measurement and scanning system consists of:

<ul>
<li>
An optical mainframe with a touchscreen control computer that can be used for either real-time high power microwave measurement or E-field scanning as shown in Figure 1.5.

<center>
<table>
<tr>
<td>
[[Image:neoscanfig_1_5.png|thumb|center|600px|Figure 1.5: The NeoScan Optical Mainframe System.]]
</td>
</tr>
<tr>
<td>
[[Image:neoscanfig_1_6.png|thumb|center|600px|Figure 1.6: NeoScan 2-axis translation stage.]]
</td>
</tr>
</table>
</center>

The power switch on the back will turn the system and the laser on or off. It is recommended to turn the [[NeoScan]] system on at least 30 minutes before any operation for warm-up. A USB port is used to communicate with control computer. The “Signal Out” channels can be used for real-time measurements. The RF signal can be displayed either on a high resolution oscilloscope or a spectrum analyzer. The channels can also be configured for near-field scanning measurement with a U-jumper SMA Cables. The scanning configuration can measure both amplitude and the phase of the signal with a Lock-in Amplifier.
</li>
<li>
One normal probe and two tangential probes
</li>
<li>
One 2-axis translation stage with a stage controller for scanning operation (Figure 1.6)
</li>
<li>
One RF Lock-In Amplifier
</li>
<li>
One GPIB-USB cable for instrument control
</li>
<li>
One USB multi-port Hub for instrument control
</li>
<li>
The [[NeoScan]] system control software package
</li>
</ul>

Additional equipment needed to configure [[NeoScan]] as a field scanning system include:
<ul>
<li>
A signal generator to provide the local oscillator (LO) signal for [[NeoScan]]’s output mixer
</li>
<li>
A signal generator to provide a 100 MHz reference signal to lock-in amplifier
</li>
</ul>

==== The Front Panel of [[NeoScan]] Optical Mainframe ====

The front panel is the main interface to the system. It contains a control computer that that runs Microsoft Windows, and controls, commands, and monitors the [[NeoScan]] system’s status (Figure 1.7).

<center>
[[Image:neoscanfig_1_7.png|thumb|center|650px|Figure 1.7: The Front panel of NeoScan Optical Mainframe.]]
</center>

==== The Rear Panel of [[NeoScan]] Optical Mainframe ====

The rear panel is the interface to the instruments and provides complete access for external control, optical fiber excitation, and RF signal output (Figure 1.8). It contains:
<ul>
<li>
A USB interface port for computer control of the system
</li>
<li>
The power switch and red LED Power indicator for turning on or off the system
</li>
<li>
The AC power cord. The AC power requirement is 110V, 60Hz with a 250V 2A fuse
</li>
<li>
Three SMA connector for RF output (Signal Out)
</li>
<li>
Three fiber FC/APC connector (Probe)
</li>
<li>
SMA connectors for frequency scanning mixer includes: IF Out, LO In, and RF In
</li>
<li>
SMA connectors for IF Switch Out and IF Switch Ins
</li>
<li>
An electric fan
</li>
</ul>

<center>
[[Image:neoscanfig_1_8.png|thumb|center|650px|Figure 1.8: NeoScan Real Panel.]]
</center>

=== Acronyms and Abbreviations ===

<table>
<tr>
<td>
</td>
<td>
2D: 2-dimentional
 
3D: 3-dimentional

A/D: Analog-to-Digital
 
AC: Alternating Current
 
AFCW: Air Filled Coax Waveguide

BSO: Bismuth Silicon Oxide

CAL.: Calibration
 
CH/Ch: Channel
 
cm: centimeter
 
CP: Circular polarization
 
CW: Continuous Wave (Pure Sine Wave)

D/A: Digital-to-Analog
 
DAQ: Data Acquisition
 
dB: Decibel
 
dBm: Decibel power referenced to milliwatts
 
DBR: Distributed Bragg reflector
 
DC: Direct Current
 
DUT: Device under test

EMC: Electromagnetic Compatibility
 
EMI: Electromagnetic Interference
 
EO: Electro-Optic

FC/APC: Ferrule Connector / Angle-polished connection, a fiber-optic connector
 
FEP: Fluorinated ethylene propylene, a copolymer of hexafluoropropylene and tetrafluoroethylene

GPIB: General Purpose Interface Bus
 
GRIN: Graded index lens

Hz: Hertz

IF: Intermediate Frequency/The low frequency signal port of a mixer.

LED: Light emitting diode
 
LNA: Low-Noise Amplifier
LO: Local Oscillator/The carrier input port of a mixer
 
LTO: Lithium Tantalate (LiTaO3)

m: meter
 
mm: millimeter
 
msec: millisecond (ms)
 
mW: milliwatt
 
MMIC: Monolithic Microwave Integrated Circuits
 
MO: Magneto-Optic

nsec: nanosecond (ns)

PD: Photodetector
 
PM: Polarization maintaining
 
PM: Phase Modulation
 
Pol. Ctrl.: Polarization controller

Ref Level: Reference Level
 
RF: Radio Frequency/The high frequency signal port of a mixer
 
RFI: Radio Frequency Interference
 
RFIC: Radio Frequency Integrated Circuits
 
RT: Real-time

s: Second (sec)
 
SA: Spectrum Analyzer
 
SBIR: Small Business Innovative Research
 
SMA: Subminiature connector ‘A’, a coaxial RF connector
 
SNR: Signal-to-noise ratio (signal power over noise power)

TEM: Transverse Electromagnetic
 
TEM cell: A small chamber generating a consistent electromagnetic field for testing small RF devices

USB: Universal Serial Bus
 
um: Micrometer (m)
 
uV: Microvolt (V)

V/m: Volt/meter
 
V: Volt
</td>
</tr>
</table>

== NeoScan Probe Installation ==

=== Shipping & Handling Precautions ===

The [[NeoScan]] system contains extremely sensitive and fragile components. Use extreme caution whenever operating this system. Do not attempt to service or adjust or install substitute parts to its components. Please contact EMAG Technologies Inc. for service and more information.

In spite of its sophisticated capabilities, the [[NeoScan]] system is easy to learn and operate. You can start using the system within hours. Below are the procedures to help you get started using [[NeoScan]]. We highly recommend that you complete chapters 2 and 3 of [[NeoScan]] and familiarize yourself with its basic functions before attempting to run the system. Turn the [[NeoScan]] system on at least 30 minutes before any operation for warm-up. Before getting started, consider the following precautions:

<ul>
<li>
The system operates from a 100V or 120V nominal AC power source having a line frequency of 50 or 60 Hz. Before connecting the power cord to a power source, verify that the AC input voltage value is correct.
</li>
<li>
[[NeoScan]] real-time field measurement and scanning system contains a 40 mW laser diode emitting Class 3B laser radiation at ~1550 nm. The direct output power from the fiber port of each probe channel on the front panel is less than 10 mW. The beam at 1550 nm is invisible to human being and the invisible beam can be hazardous if directed at the eye. Direct exposure of eye to the invisible laser beam must be avoided.
</li>
<li>
The fans in [[NeoScan]] optical mainframe are required to maintain proper operation. Do not block the vents in the frame box.
</li>
<li>
In order to avoid EMC/EMI effect, keep the [[NeoScan]] box as far away from the DUT as possible.
</li>
<li>
Follow standard electrostatic-discharge precaution, including grounding yourself prior to making cable connections to the system. A ground strap provides the most effective grounding and minimizes the likelihood of electrostatic damage.
</li>
<li>
Handle the probes and the PM fibers with extreme care. 
</li>
<li>
Gently clean and attach the appropriate fiber connectors to the correct fiber port of the [[NeoScan]] system.
</li>
<li>
Do not excessively pull or bend the fiber.
</li>
<li>
The probe tip is extremely fragile. Do not strike the probe tip. Always keep the probes in a safe place. 
</li>
<li>
Keep the cables and the fibers handy in safe positions, but out of the way and untangled.
</li>
<li>
Always use an SMA torque wrench when connecting the SMA connectors.
</li>
<li>
Do not over-torque the microwave SMA connectors.
</li>
<li>
Do not over-tighten the optical connectors.
</li>
</ul>

=== Installing the [[NeoScan]] System ===

[[NeoScan]] optical mainframe is enclosed in a 4U case with dimensions of 24”(H) x 17”(L) x 13” (W) (61cm x 43cm x 33cm). The instrument weighs 60 pounds (27kg) and contains the entire optical system, control systems, and power conditioning circuits required for electric field measurements. It is packaged in foam. Open the cardboard box and remove the layers of foam. Care must be taken to ensure the optical connectors, the SMA connectors, and the USB connectors on the rear panel are not damaged. Remove the fiber port protection caps and keep safe for reuse when repacking the instrument. The instrument box should contain the corresponding power cord, cables and etc.

Unpack the control computer (surface) and the computer holder. Attach the computer holder to the [[NeoScan]] front panel with the screws. Pull up the Holder Lock part on the top left. Place the control computer inside the computer holder. Pull down the Holder Lock part and lock it (Figure 2.1)

<center>[[Image:neoscanfig_2_1.png|thumb|center|650px|Figure 2.1: Installing NeoScan control computer.]]</center>

=== Installing [[NeoScan]] Translation Stage ===

Unpack the [[NeoScan]] translation stage components. To install (see Appendix A-l):

<ol>
<li>
Place the Y Linear Translation Stage on a stable flat table, preferably an optical table.
</li>
<li>
Mount the X Linear Translation Stage on the Y Linear Translation Stage using four screws as shown by red screws in Figure 2.2.
</li>
<li>
Mount the Plate on the X Linear Translation Stage. Fasten its four edges with screws as indicated by green arrows in Figure 2.2.
</li>
<li>
Place the X, Y, and Z Miniature Translation Stages on the front edge of the Optical Plate and fasten its four edges with screws as indicated by arrows in Figure 2.2.
</li>
<li>
Attach the Plastic Probe Fixture to the XYZ Miniature Translation Stage.
</li>
</ol>

<center>[[Image:neoscanfig_2_2.png|thumb|center|650px|Figure 2.2: Installing NeoScan Translation Stage.]]</center>

=== Unpacking the EO Probes ===

The [[NeoScan]] probes are extremely sensitive and fragile components. Use extreme caution whenever operating them. EO probes have been packed in separate boxes (Figure 2.3). The probes are delicate, care must be taken to ensure that the fiber and probe tip are not bent hard or dropped. The probe heads are placed in foam and the probes are housed in a box surrounded by bubble wrap on all sides.

To unpack, open the box top. Remove the visible bubble wrap and remove the entire foam structure from the box. Cut the tape holding the foam structure halves together and remove the top. Remove any bubble wrap in the foam structure. Remove the cardboard covering the probe tip and any small pieces of foam holding the EO Probe down in the foam.

<center>
<table>
<tr>
<td>
[[Image:neoscanfig_2_3.png|thumb|center|350px|Figure 2.3: A NeoScan packing box with one probe.]]
</td>
<td>
</td>
<td>
</td>
<td>
</td>
<td>
[[Image:neoscanfig_2_4.png|thumb|center|500px|Figure 2.4: How to remove a probe from foam and holding an EO probe and the PM fiber.]]
</td>
</tr>
</table>
</center>

To remove a probe and the fiber from the box:

<ol>
<li>
Carefully press the both sides of the foam near the probe head, carefully un-wedge the probe from its slot, and then lift the probe. Figure 2.4 shows a picture how to remove a probe.
</li>
<li>
Carefully remove the probe from the foam, making sure to grasp the probe glass tube and not the probe tip, as this may damage the EO probe.
</li>
<li>
While holding the probe from its glass tube and keep the fiber sheath in your hand, avoid stretching the white plastic shield part of the fiber. Do not pull the plastic shield part hard.
</li>
</ol>

=== Handling the Probes and the Fibers ===

The Probes and the fibers are made of a very pure, sensitive, and expensive materials. Treat them with care. Unwind a fiber gently and work out any tangles carefully.

<ul>
<li>
DO NOT pull hard the fiber.
</li>
<li>
DO NOT bend the fiber to a radius smaller than 4” (10 cm).
</li>
<li>
DO NOT strike the probe tip.
</li>
</ul>

Remove the protective cap on the optical fiber cable connector. Connectors should be cleaned before interconnection. Any dirt or contamination can damage the connector or degrade performance. In other words, fiber optic connectors should to be cleaned every time they are mated and unmated. Use a dry cleaning cloth (reel-based cassette cleaner) to remove dirt, dust, and oil from connector end faces (Figure 2.5). You can also carefully clean a dirty fiber connector with isopropyl alcohol (IPA) and then dry with FIS fiber optic cleaner.

<center>
[[Image:neoscanfig_2_5.png|thumb|center|600px|Figure 2.5: Cleaning a connector end face using a dry cleaning cloth reel-based cassette cleaner.]]
</center>

=== Connecting the Probe to [[NeoScan]] Optical Mainframe ===

The probe is coupled with a 10-meter-long PM fiber and connects to the optical mainframe with a FC/APC optical fiber connector. Remove the APC protection caps and keep safe for reuse when repacking the instrument. Gently clean and attach the appropriate fiber connectors to the correct fiber ports of the [[NeoScan]] system. There is a pre-aligned (slow or fast axis) adjustable key connectors for the PM axis alignment across a connection. Make sure the key is aligned in the slot properly before tightening, see Figure 2.6.

<center>[[Image:neoscanfig_2_6.png|thumb|center|600px|Figure 2.6: PM Fiber Optics and Connectors.]]</center>

=== Quick Test of the [[NeoScan]] System ===

As a quick system test:

<ol>
<li>
Plug in the [[NeoScan]] optical mainframe power cord into an electrical receptacle and turn it on.
</li>
<li>
Connect control computer AC power adapter and turn on the control computer.
</li>
<li>
Connect USB multi-port Hub AC power adapter to the power.
</li>
<li>
Connect the [[NeoScan]] Optical Mainframe USB Interface Port on the rear panel to a port on the USB Hub, then connect the control computer USB Interface Port to another port on the USB Hub. The USB Hub is a plug and play device.
</li>
<li>
Attach the appropriate fiber connectors to the correct fiber ports of the [[NeoScan]] system (Probe 1, Probe 2, or Probe 3), see section 2.6.
</li>
<li>
[[Image:icon_OBM.png|right|]] Open the [[NeoScan]] Optical Bench Manager program. The [[NeoScan]] Optical Bench Manager program is a Labview-Based System Operation which monitors the system status and the total return and polarization optical powers (see section 3.1 for more details). It is accessible through the desktop or Windows Explorer by double clicking on NeoScanOBM icon [[Image:icon_OBM_small.png]] as shown in Figure 2.7. The program will start running as shown in Figure 2.8.
</li>
</ol>

<center>
[[Image:neoscanfig_2_7.png|thumb|center|500px|Figure 2.7: NeoScan Program Group in or Windows Explorer.]]
</center>

When the program starts, the system should detect the total return power and polarization power and display their graphs over time and show their numerical values in mW, see Figure 2.8. The green “Probe Detected” indicator light will indicate that the probe is connected to the correct channel. Otherwise, if either the total return power or the polarization power is too low (less than 0.3 mW), the information panel will remind the users to correct the problem. This can be the case if the probe is not connected or is defective or there is a problem with the [[NeoScan]] system (Figure 2.9). Select the channel number you want to check using the dropdown list labeled “Select Channel.”

<center>
[[Image:neoscanfig_2_8.png|thumb|center|650px|Figure 2.8: The total return power and polarization power of delivered beam to optical probe.]]
 
[[Image:neoscanfig_2_9.png|thumb|center|650px|Figure 2.9: NeoScan Optical Bench Manager indicating that the total return power is too low.]]
</center>

=== Deploying the Probe on a Probe Fixture ===

During the scan or optimization process, the probe will be mounted on a plastic probe fixtures. The plastic probe fixtures has been mounted on translation stage by a single cap screw and holds the probe (Figure 2.10). The probe is positioned inside the gap located on probe holder and is secured by a cap which is fastened by screws as shown in Figure 2.11.

<center>
[[Image:neoscanfig_2_10.png|thumb|center|650px|Figure 2.10: Mounting the plastic probe fixtures on a moving translation stage.]]
</center>

<ol>
<li>
Set up the 2-axis translation stage on a stable flat table, an optical table is preferred.
</li>
<li>
Mount the plastic probe fixtures on the Z linear translation stage using the screw.
</li>
<li>
Loosen all screws of the cubic probe holder. Lift the cap and rest the probe holder on a flat horizontal flat surface. Gently insert the probe into the gap in the plastic probe holder in such a way that that about 0.6” (1.5cm) of the probe comes out from the either ends of the gap (Figure 2.11).
</li>
<li>
While the probe is sitting inside the gap, place the cap on the probe holder and secure it by fastening the four plastic screws. Make sure it is tight is enough so that the probe does not slip out of the gap. Yet, do not tighten hard since it may break the probe glass. Tighten the screws until you feel that you are not able to rotate the probe by your fingers.
</li>
<li>
Place the cube holder inside the probe fixture head in such a way that the probe passes through the existing hole (Figure 2.12). Make sure the probe does not hit the edges of the hole, otherwise, it may break and the crystal may fall off.
</li>
<li>
To avoid bending the soft plastic shield of the fiber, pass the fiber through the top of the probe fixture using regular (Scotch) adhesive tapes as shown in Figure 2.13.
Important: When pulling out the probe from the hole, make sure the probe is positioned vertically and the probe tip does not touch the edges of the hole.
</li>
</ol>

<center>
[[Image:neoscanfig_2_11.png|thumb|center|650px|Figure 2.11: Placing the probe inside the probe holder.]]
 
[[Image:neoscanfig_2_12.png|thumb|center|650px|Figure 2.12: Inserting the probe holder inside the probe fixture head.]]
</center>

Two black markers on the tangential probe indicate the E-field sensitivity direction (probes’ polarization direction). They should be oriented along the electric field in order to detect the maximum signal, see Figure 2.14.

<center>
[[Image:neoscanfig_2_13.png|thumb|center|650px|Figure 2.13: Securing the probe on the probe fixture.]]
 
[[Image:neoscanfig_2_14.png|thumb|center|650px|Figure 2.14: Black markers on the tangential probe indicating the E-field sensitivity direction (probes’ polarization direction).]]
</center>

NeoScan Manual Part A: Getting Started

2022-08-26T14:00:03Z

Asabet:

== Overview ==

Part One

=== General Overview ===

[[NeoScan]]® real-time field measurement and scanning system is a turnkey, electric or magnetic field probe and measurement system. It can be configured as a near-field scanning system for mapping aperture-level field distributions with minimal invasiveness to the device or system under test. Or it can be used as a real-time field probe system for sensing or detecting electric and magnetic fields in a variety of media.

The [[NeoScan]] system can be used as an essential tool for test and evaluation of antennas and phased array systems and is particularly useful for phase characterization and calibration. Unlike conventional near-field scanning systems that utilize metallic radiators to pick up the fields, [[NeoScan]] probes are non-metallic, operating based on electro-optic (EO) or magneto-optic (MO) effects. Its field probes feature extremely small EO or MO crystals mounted at the tip of an optical fiber. The combination of the small probe size and absolutely non-metallic parts leads to the ultimate radio frequency (RF) non-invasiveness.

[[NeoScan]] provides detailed field maps of passive and active devices and circuits including RFIC’s and MMIC’s. Such invaluable information can effectively be used for design validation, model verification, diagnostics and fault isolation or performance evaluation of various parts of RF systems. It is also an alternative compact range for measurement of far-field radiation patterns of antennas and arrays, dispensing with a costly anechoic chamber. The system can be used in real-time, polarimetric and coherent sensing and probing of wideband signals and pulses, EMC/EMI testing, and medical device measurements and characterization of biological environments. The [[NeoScan]] system can be configured in a multi-channel architecture for simultaneous field measurement at multiple points and locations. Different channels can measure different polarizations in a coherent manner.

=== Features of the [[NeoScan]] System ===

<ul>
<li>
Wideband operational bandwidth: few MHz to 20GHz, measuring repetitive signals with 50-ps rise time, 10-ns duration, and 80 V/m amplitude with a 10% to 90% definition
</li>
<li>
Hardware system sensitivity requirements of 2 V/m/√Hz
</li>
<li>
Electric field real-time measurement capability
</li>
<ul>
<li>
Multi-port Integrated FC/APC Input
</li>
<li>
Multi-port SMA RF Output
</li>
</ul>
<li>
Scanning measurement capability
</li>
<ul>
<li>
Simultaneous measurement of amplitude and phase
</li>
<li>
Scanning area up to 80” x 80” (2 x 2 m)
</li>
<li>
0.1 micron resolution linear encoder
</li>
</ul>
<li>
Integrated Optical Bench:
</li>
<ul>
<li>
1550 nm Diode Laser (laser beam spot < 100 μm sq)
</li>
<li>
Polarization Controller and Analyzer
</li>
<li>
AC and DC photodetectors
</li>
</ul>
<li>
Very wide dynamic range (>70 dB) and linear response range in 1 V/m to 2 MV/m
</li>
<li>
One normal field probe and two tangential field probe, each having a FC/APC optical fiber connector (Includes 10 m PM fibers on all probes)
</li>
<li>
System Operation, Monitoring, and Optimization Software
</li>
</ul>

=== General Description ===

The [[NeoScan]] real-time field measurement & scanning system provides an entirely new capability for the measurement of high-intensity electric fields. This technology is based on the Pockel’s effect which measures the phase-retardance of an optical beam due to an impinging electric field. This electro-optic effect is observed in non-centrosymmetric crystals when an electric field is directed along certain crystal axes causes a change in the indices of refraction encountered by an incident optical beam. Figure 1.1 shows the basic principle of the electro-optic effect. The electro-optic effect provides a means of modulating the phase or intensity of the optical radiation. In another sense, this effect also makes it possible to detect the presence of an electric field impinging on the crystal. The polarization of an optical beam travelling through a crystal is altered by the electric field in that crystal. The comparison of polarization states allows determination of the amplitude and phase of the existing RF electric field. Since the electro-optic sensing phenomenon relies on small displacements of the atomic crystal structure, the response time of the process is extremely short. This short response time makes it possible to measure high-frequency electric fields up to the terahertz regime.

<center>[[Image:neoscanfig_1_1.png|thumb|center|400px|Figure 1.1: EO modulation of an optical signal.]]</center>

A typical EO probe is composed of an optical fiber affixed with an EO crystal coated with a dielectric reflection layer on its bottom surface as shown in Figure 1.2. These probes have very delicate optical interconnects and extreme care must be taken in handling the probes to prevent excessive shock, bending and out of plane stresses.

Due to its broad measurement bandwidth and high spatial resolution, the EO measurement technique is a promising means to characterize RF systems such as microwave and millimeter-wave integrated circuits, HPM sources and systems, and large-scale active arrays and other radiating structures. Unlike the conventional electrical measurement techniques which require some type of metal structure for the resonant detection of an RF signal, [[NeoScan]]’s unique real-time EO electric field measurement method requires no metal components. As a result, the field perturbation caused by introducing metal within the vicinity of a device under test (DUT) is significantly reduced.

Figure 1.3 shows the electric and magnetic fields distribution of a traveling RF wave with a normal probe shown in typical orientation. To detect the maximum electric field in this configuration, the propagation direction of the optical beam of the probe should be parallel to the E-field direction. In general, a normal EO probe is only sensitive to the electric field component parallel to the probe handle, whereas a tangential probe is sensitive to the electric field component perpendicular to the probe handle. Yet, the E-field sensitivity of a tangential probe depends on its crystal orientation sitting on its tip.

<center>
<table>
<tr>
<td>
[[Image:neoscanfig_1_2.png|thumb|left|380px|Figure 1.2: A single-axis EO probe. The probe tip is protected by Epoxy to
provide nearly identical performance to a bare probe.]]
</td>
<td>
</td>
<td>
</td>
<td>
</td>
<td>
[[Image:neoscanfig_1_3.png|thumb|right|480px|Figure 1.3: Illustrates a normal field measurement as oriented with respect to an incident electric field. The normal probe is oriented with the probe normal to direction of propagation.]]
</td>
</tr>
</table>
</center>

A low noise 1550 nm laser diode is used as optical beam source. The optical connections are fiber-based. The beam is delivered to an optical probe. The polarization of the beam is modulated through an electro-optic crystal on the probe tip. The modulated beam is reflected back into the fiber, and back to the mainframe for analysis. An optical analyzer converts the polarization change of the beam into an amplitude change. The amplitude is linearly proportional to the strength of the external electric field at the probe-crystal location. The equation E=αV is used to calculate the electric field, where α is the calibration factor, or the slope between the electric field E (in V/m) and the measured EO signal V (in V/m/uV). For instance, for a calibration factor of 1.082 V/m/uV. a measured EO signal of 1000 uV (0.001 V), corresponds to and electric field of 1.082 V/m/uV x 1000 V = 1082 V/m.

<center>[[Image:neoscanfig_1_4.png|thumb|center|480px|Figure 1.4: An example of a real time measurement of a 6.6 nsec pulse with 10 kV/m peak field strength. The upper trace shown on the oscilloscope is the input signal, and the lower trace is the measured signal.]]</center>

Due to the fast response of the EO crystal, it is possible to measure extremely high-bandwidth signals with the normal SNR limitations of wideband signal detection. Using this capability, EMAG Technologies Inc. has developed the world’s first fiber-based real-time polarimetric electric field sensor system – [[NeoScan]] – for the measurement of high-power microwave signals. Figure 1.4 is an example of a real time measurement of a 6.6 nsec pulse with 10 kV/m peak field strength. The upper trace shown on the oscilloscope is the received signal, and the lower trace is the detected signal.

The [[NeoScan]] system is capable of measuring signals with bandwidths up to 20 GHz and signal levels as low as 1 V/m for optical probes with a 10 m PM fiber. Because the optical probes are free of metallic parts, it is possible to measure extremely high-field strengths since there are no free electron surfaces to generate arcing. The [[NeoScan]] can measure fields up at least 2 MV/m and possibly higher.

=== System Overview ===

The [[NeoScan]] real-time field measurement and scanning system consists of:

<ul>
<li>
An optical mainframe with a touchscreen control computer that can be used for either real-time high power microwave measurement or E-field scanning as shown in Figure 1.5.

<center>
<table>
<tr>
<td>
[[Image:neoscanfig_1_5.png|thumb|center|600px|Figure 1.5: The NeoScan Optical Mainframe System.]]
</td>
</tr>
<tr>
<td>
[[Image:neoscanfig_1_6.png|thumb|center|600px|Figure 1.6: NeoScan 2-axis translation stage.]]
</td>
</tr>
</table>
</center>

The power switch on the back will turn the system and the laser on or off. It is recommended to turn the [[NeoScan]] system on at least 30 minutes before any operation for warm-up. A USB port is used to communicate with control computer. The “Signal Out” channels can be used for real-time measurements. The RF signal can be displayed either on a high resolution oscilloscope or a spectrum analyzer. The channels can also be configured for near-field scanning measurement with a U-jumper SMA Cables. The scanning configuration can measure both amplitude and the phase of the signal with a Lock-in Amplifier.
</li>
<li>
One normal probe and two tangential probes
</li>
<li>
One 2-axis translation stage with a stage controller for scanning operation (Figure 1.6)
</li>
<li>
One RF Lock-In Amplifier
</li>
<li>
One GPIB-USB cable for instrument control
</li>
<li>
One USB multi-port Hub for instrument control
</li>
<li>
The [[NeoScan]] system control software package
</li>
</ul>

Additional equipment needed to configure [[NeoScan]] as a field scanning system include:
<ul>
<li>
A signal generator to provide the local oscillator (LO) signal for [[NeoScan]]’s output mixer
</li>
<li>
A signal generator to provide a 100 MHz reference signal to lock-in amplifier
</li>
</ul>

==== The Front Panel of [[NeoScan]] Optical Mainframe ====

The front panel is the main interface to the system. It contains a control computer that that runs Microsoft Windows, and controls, commands, and monitors the [[NeoScan]] system’s status (Figure 1.7).

<center>
[[Image:neoscanfig_1_7.png|thumb|center|650px|Figure 1.7: The Front panel of NeoScan Optical Mainframe.]]
</center>

==== The Rear Panel of [[NeoScan]] Optical Mainframe ====

The rear panel is the interface to the instruments and provides complete access for external control, optical fiber excitation, and RF signal output (Figure 1.8). It contains:
<ul>
<li>
A USB interface port for computer control of the system
</li>
<li>
The power switch and red LED Power indicator for turning on or off the system
</li>
<li>
The AC power cord. The AC power requirement is 110V, 60Hz with a 250V 2A fuse
</li>
<li>
Three SMA connector for RF output (Signal Out)
</li>
<li>
Three fiber FC/APC connector (Probe)
</li>
<li>
SMA connectors for frequency scanning mixer includes: IF Out, LO In, and RF In
</li>
<li>
SMA connectors for IF Switch Out and IF Switch Ins
</li>
<li>
An electric fan
</li>
</ul>

<center>
[[Image:neoscanfig_1_8.png|thumb|center|650px|Figure 1.8: NeoScan Real Panel.]]
</center>

=== Acronyms and Abbreviations ===

<table>
<tr>
<td>
</td>
<td>
2D: 2-dimentional
 
3D: 3-dimentional

A/D: Analog-to-Digital
 
AC: Alternating Current
 
AFCW: Air Filled Coax Waveguide

BSO: Bismuth Silicon Oxide

CAL.: Calibration
 
CH/Ch: Channel
 
cm: centimeter
 
CP: Circular polarization
 
CW: Continuous Wave (Pure Sine Wave)

D/A: Digital-to-Analog
 
DAQ: Data Acquisition
 
dB: Decibel
 
dBm: Decibel power referenced to milliwatts
 
DBR: Distributed Bragg reflector
 
DC: Direct Current
 
DUT: Device under test

EMC: Electromagnetic Compatibility
 
EMI: Electromagnetic Interference
 
EO: Electro-Optic

FC/APC: Ferrule Connector / Angle-polished connection, a fiber-optic connector
 
FEP: Fluorinated ethylene propylene, a copolymer of hexafluoropropylene and tetrafluoroethylene

GPIB: General Purpose Interface Bus
 
GRIN: Graded index lens

Hz: Hertz

IF: Intermediate Frequency/The low frequency signal port of a mixer.

LED: Light emitting diode
 
LNA: Low-Noise Amplifier
LO: Local Oscillator/The carrier input port of a mixer
 
LTO: Lithium Tantalate (LiTaO3)

m: meter
 
mm: millimeter
 
msec: millisecond (ms)
 
mW: milliwatt
 
MMIC: Monolithic Microwave Integrated Circuits
 
MO: Magneto-Optic

nsec: nanosecond (ns)

PD: Photodetector
 
PM: Polarization maintaining
 
PM: Phase Modulation
 
Pol. Ctrl.: Polarization controller

Ref Level: Reference Level
 
RF: Radio Frequency/The high frequency signal port of a mixer
 
RFI: Radio Frequency Interference
 
RFIC: Radio Frequency Integrated Circuits
 
RT: Real-time

s: Second (sec)
 
SA: Spectrum Analyzer
 
SBIR: Small Business Innovative Research
 
SMA: Subminiature connector ‘A’, a coaxial RF connector
 
SNR: Signal-to-noise ratio (signal power over noise power)

TEM: Transverse Electromagnetic
 
TEM cell: A small chamber generating a consistent electromagnetic field for testing small RF devices

USB: Universal Serial Bus
 
um: Micrometer (m)
 
uV: Microvolt (V)

V/m: Volt/meter
 
V: Volt
</td>
</tr>
</table>

== NeoScan Probe Installation ==

=== Shipping & Handling Precautions ===

The [[NeoScan]] system contains extremely sensitive and fragile components. Use extreme caution whenever operating this system. Do not attempt to service or adjust or install substitute parts to its components. Please contact EMAG Technologies Inc. for service and more information.

In spite of its sophisticated capabilities, the [[NeoScan]] system is easy to learn and operate. You can start using the system within hours. Below are the procedures to help you get started using [[NeoScan]]. We highly recommend that you complete chapters 2 and 3 of [[NeoScan]] and familiarize yourself with its basic functions before attempting to run the system. Turn the [[NeoScan]] system on at least 30 minutes before any operation for warm-up. Before getting started, consider the following precautions:

<ul>
<li>
The system operates from a 100V or 120V nominal AC power source having a line frequency of 50 or 60 Hz. Before connecting the power cord to a power source, verify that the AC input voltage value is correct.
</li>
<li>
[[NeoScan]] real-time field measurement and scanning system contains a 40 mW laser diode emitting Class 3B laser radiation at ~1550 nm. The direct output power from the fiber port of each probe channel on the front panel is less than 10 mW. The beam at 1550 nm is invisible to human being and the invisible beam can be hazardous if directed at the eye. Direct exposure of eye to the invisible laser beam must be avoided.
</li>
<li>
The fans in [[NeoScan]] optical mainframe are required to maintain proper operation. Do not block the vents in the frame box.
</li>
<li>
In order to avoid EMC/EMI effect, keep the [[NeoScan]] box as far away from the DUT as possible.
</li>
<li>
Follow standard electrostatic-discharge precaution, including grounding yourself prior to making cable connections to the system. A ground strap provides the most effective grounding and minimizes the likelihood of electrostatic damage.
</li>
<li>
Handle the probes and the PM fibers with extreme care. 
</li>
<li>
Gently clean and attach the appropriate fiber connectors to the correct fiber port of the [[NeoScan]] system.
</li>
<li>
Do not excessively pull or bend the fiber.
</li>
<li>
The probe tip is extremely fragile. Do not strike the probe tip. Always keep the probes in a safe place. 
</li>
<li>
Keep the cables and the fibers handy in safe positions, but out of the way and untangled.
</li>
<li>
Always use an SMA torque wrench when connecting the SMA connectors.
</li>
<li>
Do not over-torque the microwave SMA connectors.
</li>
<li>
Do not over-tighten the optical connectors.
</li>
</ul>

=== Installing the [[NeoScan]] System ===

[[NeoScan]] optical mainframe is enclosed in a 4U case with dimensions of 24”(H) x 17”(L) x 13” (W) (61cm x 43cm x 33cm). The instrument weighs 60 pounds (27kg) and contains the entire optical system, control systems, and power conditioning circuits required for electric field measurements. It is packaged in foam. Open the cardboard box and remove the layers of foam. Care must be taken to ensure the optical connectors, the SMA connectors, and the USB connectors on the rear panel are not damaged. Remove the fiber port protection caps and keep safe for reuse when repacking the instrument. The instrument box should contain the corresponding power cord, cables and etc.

Unpack the control computer (surface) and the computer holder. Attach the computer holder to the [[NeoScan]] front panel with the screws. Pull up the Holder Lock part on the top left. Place the control computer inside the computer holder. Pull down the Holder Lock part and lock it (Figure 2.1)

<center>[[Image:neoscanfig_2_1.png|thumb|center|650px|Figure 2.1: Installing NeoScan control computer.]]</center>

=== Installing [[NeoScan]] Translation Stage ===

Unpack the [[NeoScan]] translation stage components. To install (see Appendix A-l):

<ol>
<li>
Place the Y Linear Translation Stage on a stable flat table, preferably an optical table.
</li>
<li>
Mount the X Linear Translation Stage on the Y Linear Translation Stage using four screws as shown by red screws in Figure 2.2.
</li>
<li>
Mount the Plate on the X Linear Translation Stage. Fasten its four edges with screws as indicated by green arrows in Figure 2.2.
</li>
<li>
Place the X, Y, and Z Miniature Translation Stages on the front edge of the Optical Plate and fasten its four edges with screws as indicated by arrows in Figure 2.2.
</li>
<li>
Attach the Plastic Probe Fixture to the XYZ Miniature Translation Stage.
</li>
</ol>

<center>[[Image:neoscanfig_2_2.png|thumb|center|650px|Figure 2.2: Installing NeoScan Translation Stage.]]</center>

=== Unpacking the EO Probes ===

The [[NeoScan]] probes are extremely sensitive and fragile components. Use extreme caution whenever operating them. EO probes have been packed in separate boxes (Figure 2.3). The probes are delicate, care must be taken to ensure that the fiber and probe tip are not bent hard or dropped. The probe heads are placed in foam and the probes are housed in a box surrounded by bubble wrap on all sides.

To unpack, open the box top. Remove the visible bubble wrap and remove the entire foam structure from the box. Cut the tape holding the foam structure halves together and remove the top. Remove any bubble wrap in the foam structure. Remove the cardboard covering the probe tip and any small pieces of foam holding the EO Probe down in the foam.

<center>
<table>
<tr>
<td>
[[Image:neoscanfig_2_3.png|thumb|center|350px|Figure 2.3: A NeoScan packing box with one probe.]]
</td>
<td>
</td>
<td>
</td>
<td>
</td>
<td>
[[Image:neoscanfig_2_4.png|thumb|center|500px|Figure 2.4: How to remove a probe from foam and holding an EO probe and the PM fiber.]]
</td>
</tr>
</table>
</center>

To remove a probe and the fiber from the box:

<ol>
<li>
Carefully press the both sides of the foam near the probe head, carefully un-wedge the probe from its slot, and then lift the probe. Figure 2.4 shows a picture how to remove a probe.
</li>
<li>
Carefully remove the probe from the foam, making sure to grasp the probe glass tube and not the probe tip, as this may damage the EO probe.
</li>
<li>
While holding the probe from its glass tube and keep the fiber sheath in your hand, avoid stretching the white plastic shield part of the fiber. Do not pull the plastic shield part hard.
</li>
</ol>

=== Handling the Probes and the Fibers ===

The Probes and the fibers are made of a very pure, sensitive, and expensive materials. Treat them with care. Unwind a fiber gently and work out any tangles carefully.

<ul>
<li>
DO NOT pull hard the fiber.
</li>
<li>
DO NOT bend the fiber to a radius smaller than 4” (10 cm).
</li>
<li>
DO NOT strike the probe tip.
</li>
</ul>

Remove the protective cap on the optical fiber cable connector. Connectors should be cleaned before interconnection. Any dirt or contamination can damage the connector or degrade performance. In other words, fiber optic connectors should to be cleaned every time they are mated and unmated. Use a dry cleaning cloth (reel-based cassette cleaner) to remove dirt, dust, and oil from connector end faces (Figure 2.5). You can also carefully clean a dirty fiber connector with isopropyl alcohol (IPA) and then dry with FIS fiber optic cleaner.

<center>
[[Image:neoscanfig_2_5.png|thumb|center|600px|Figure 2.5: Cleaning a connector end face using a dry cleaning cloth reel-based cassette cleaner.]]
</center>

=== Connecting the Probe to [[NeoScan]] Optical Mainframe ===

The probe is coupled with a 10-meter-long PM fiber and connects to the optical mainframe with a FC/APC optical fiber connector. Remove the APC protection caps and keep safe for reuse when repacking the instrument. Gently clean and attach the appropriate fiber connectors to the correct fiber ports of the [[NeoScan]] system. There is a pre-aligned (slow or fast axis) adjustable key connectors for the PM axis alignment across a connection. Make sure the key is aligned in the slot properly before tightening, see Figure 2.6.

<center>[[Image:neoscanfig_2_6.png|thumb|center|600px|Figure 2.6: PM Fiber Optics and Connectors.]]</center>

=== Quick Test of the [[NeoScan]] System ===

As a quick system test:

<ol>
<li>
Plug in the [[NeoScan]] optical mainframe power cord into an electrical receptacle and turn it on.
</li>
<li>
Connect control computer AC power adapter and turn on the control computer.
</li>
<li>
Connect USB multi-port Hub AC power adapter to the power.
</li>
<li>
Connect the [[NeoScan]] Optical Mainframe USB Interface Port on the rear panel to a port on the USB Hub, then connect the control computer USB Interface Port to another port on the USB Hub. The USB Hub is a plug and play device.
</li>
<li>
Attach the appropriate fiber connectors to the correct fiber ports of the [[NeoScan]] system (Probe 1, Probe 2, or Probe 3), see section 2.6.
</li>
<li>
[[Image:icon_OBM.png|right|]] Open the [[NeoScan]] Optical Bench Manager program. The [[NeoScan]] Optical Bench Manager program is a Labview-Based System Operation which monitors the system status and the total return and polarization optical powers (see section 3.1 for more details). It is accessible through the desktop or Windows Explorer by double clicking on NeoScanOBM icon [[Image:icon_OBM_small.png]] as shown in Figure 2.7. The program will start running as shown in Figure 2.8.
</li>
</ol>

<center>
[[Image:neoscanfig_2_7.png|thumb|center|500px|Figure 2.7: NeoScan Program Group in or Windows Explorer.]]
</center>

When the program starts, the system should detect the total return power and polarization power and display their graphs over time and show their numerical values in mW, see Figure 2.8. The green “Probe Detected” indicator light will indicate that the probe is connected to the correct channel. Otherwise, if either the total return power or the polarization power is too low (less than 0.3 mW), the information panel will remind the users to correct the problem. This can be the case if the probe is not connected or is defective or there is a problem with the [[NeoScan]] system (Figure 2.9). Select the channel number you want to check using the dropdown list labeled “Select Channel.”

<center>
[[Image:neoscanfig_2_8.png|thumb|center|650px|Figure 2.8: The total return power and polarization power of delivered beam to optical probe.]]
 
[[Image:neoscanfig_2_9.png|thumb|center|650px|Figure 2.9: NeoScan Optical Bench Manager indicating that the total return power is too low.]]
</center>

=== Deploying the Probe on a Probe Fixture ===

During the scan or optimization process, the probe will be mounted on a plastic probe fixtures. The plastic probe fixtures has been mounted on translation stage by a single cap screw and holds the probe (Figure 2.10). The probe is positioned inside the gap located on probe holder and is secured by a cap which is fastened by screws as shown in Figure 2.11.

<center>
[[Image:neoscanfig_2_10.png|thumb|center|650px|Figure 2.10: Mounting the plastic probe fixtures on a moving translation stage.]]
</center>

<ol>
<li>
Set up the 2-axis translation stage on a stable flat table, an optical table is preferred.
</li>
<li>
Mount the plastic probe fixtures on the Z linear translation stage using the screw.
</li>
<li>
Loosen all screws of the cubic probe holder. Lift the cap and rest the probe holder on a flat horizontal flat surface. Gently insert the probe into the gap in the plastic probe holder in such a way that that about 0.6” (1.5cm) of the probe comes out from the either ends of the gap (Figure 2.11).
</li>
<li>
While the probe is sitting inside the gap, place the cap on the probe holder and secure it by fastening the four plastic screws. Make sure it is tight is enough so that the probe does not slip out of the gap. Yet, do not tighten hard since it may break the probe glass. Tighten the screws until you feel that you are not able to rotate the probe by your fingers.
</li>
<li>
Place the cube holder inside the probe fixture head in such a way that the probe passes through the existing hole (Figure 2.12). Make sure the probe does not hit the edges of the hole, otherwise, it may break and the crystal may fall off.
</li>
<li>
To avoid bending the soft plastic shield of the fiber, pass the fiber through the top of the probe fixture using regular (Scotch) adhesive tapes as shown in Figure 2.13.
Important: When pulling out the probe from the hole, make sure the probe is positioned vertically and the probe tip does not touch the edges of the hole.
</li>
</ol>

<center>
[[Image:neoscanfig_2_11.png|thumb|center|650px|Figure 2.11: Placing the probe inside the probe holder.]]
 
[[Image:neoscanfig_2_12.png|thumb|center|650px|Figure 2.12: Inserting the probe holder inside the probe fixture head.]]
</center>

Two black markers on the tangential probe indicate the E-field sensitivity direction (probes’ polarization direction). They should be oriented along the electric field in order to detect the maximum signal, see Figure 2.14.

<center>
[[Image:neoscanfig_2_13.png|thumb|center|650px|Figure 2.13: Securing the probe on the probe fixture.]]
 
[[Image:neoscanfig_2_14.png|thumb|center|650px|Figure 2.14: Black markers on the tangential probe indicating the E-field sensitivity direction (probes’ polarization direction).]]
</center>

EM.Cube FAQ

2022-08-26T13:58:53Z

Asabet:

== EM.Cube FAQ ==

Questions/Answers

What formulae are used while calculating the radiation patterns, and other parameters like gain, directivity

[[The Far-Field Approximation for Radiation & Scattering Problems]] at:

http://www.emagtech.com/wiki/index.php/The_Far-Field_Approximation_for_Radiation_%26_Scattering_Problems

what is meant by LCS settings?

[[EM.Cube]] provides a number of different coordinate systems. The two most important ones are the World Coordinate System (WCS) and the Local Coordinate System (LCS). Every object has a Local Coordinate System that determines the location of the object in the world coordinate system and its orientation, i.e., its rotation angles with respect to the world principal axes. The center of the local coordinate system is the most important characteristic point of an object. The position of the LCS center varies among different object types. For example, the LCS center of a box is the center of its bottom face, while the LCS center of a sphere is its true geometrical center. The LCS has three local X-, Y-, and Z-axes. For most objects, these axes line up with the object's natural axes. For example, the local Z-axis of a cylinder or a cone is always aligned along its geometrical axis. For further information please see the "Local Coordinate System" section at:

http://www.emagtech.com/wiki/index.php/Building_Geometrical_Constructions_in_CubeCAD#Local_Coordinate_System

How can we include different materials/metals and their properties in predefined arrays?

For simplicity, in our tutorials we use wizards to create antenna for a project. However, one can starts project from scratch and include different materials/metals with their properties in their design and then use the "Array Tool" from the tool bar to create an array. We may not need to use wizards for a complicated design.

How do we change the element spacing in line arrays?

If you start your project from scratch and use "Array Tool" to create say a 3 x 3 array with 5 mm spacing, simply set Element Count for X, Y and Z to 3, 3 and 1 respectively, and Spacing to 5, 5, and 0 for X, Y, and Z respectively, in Array Properties dialog window as indicated in the attached figure.

However, if you use a wizard, the Spacing might be parameterized in terms of other variables. For instance, in [[EM.Libera]]'s Tutorial Lesson 2, In in Array Properties dialog window the Element Count for X, is expressed as direct_spacing_lambda and X Spacing is defined in terms of n_direct. To change X Element Count = 50 and X Spacing = 7 you may simply replace n_direct with 7 and direct_spacing_lambda with 50.

Alternatively, it is suggested, to keep n_direct and direct_spacing_lambda in the Array Properties dialog window untouched, yet, change their values from the Variables dialog window.

What is a good way to draw a surface with a curve of y0 * exp(r*x) where I can run a parametric study of r? Again drawing parametric curves and then fill fixed the design.

You can use "Taper Strip Tool" and check mark the "Exponential" check box.

http://www.emagtech.com/wiki/index.php/Glossary_of_EM.Cube%27s_Standard_Geometric_Objects#Taper_Strip_Tool

I have been using EMCUBE on my new workstation. I just realized that the wizards (e.g., the wire dipole wizard) are not active. If I remember correctly, I faced this issue previously and it was because one of the folders were missing (the folder with the python based wizards I think). I don't have that folder anymore.

. There are few updates that were not included in the link EMCUBEfiles.zip we sent you on February. Therefore, we include them in EMCubeNewWiz.zip file that can download it from the following link:

http://www.emagtech.com/downloads/EMCubeNewWiz.zip

1. Please Unzip EMCubeNewWiz.zip file. It contains three folders Models, Python, and Wizards.
2. Copy or move the new Models, Python, and Wizards into C:\Users\username\Documents\EMAG folder let it overwrite the existing ones.

Kaz has mentioned that you have problem with plot function while trying to plot for the second time. You cannot have more than one PyPlot graph window open at one time. For this reason an error window pops up indicating "Another PyPlot window ... is already open. Please close ..." In other words, you have to close the 1st PyPlot graph window before plotting another graph or running the simulation.

Nonetheless, sometimes the PyPlot window will buried or concealed under other windows. Please make sure to bring the PyPlot window up/front and close it before plotting another data set.

The advantage of using PyPlot is that allows you to plot two data set files (with same type, e.g. .CPX) in the same PyPlot graph window as shown in the attached figure. You can have two instances of [[EM.Cube]] program and each have independent PyPlot graph windows.

I read from your website that your software can determine k-beta diagram of periodic structures which is commonly called DISPERSION DIAGRAM. Do you have any model for that purpose? I searched periodic structures and could not find any model.

To determine k-beta diagram of periodic structures, you can follow our [[EM.Tempo Tutorial Lesson 8: Analyzing A Periodic Frequency Selective Surface]]:

http://www.emagtech.com/wiki/index.php/EM.Tempo_Tutorial_Lesson_8:_Analyzing_A_Periodic_Frequency_Selective_Surface

and select "Dispersion Sweep" from the Run Simulation window as indicated in the attached figures (KBT1a.png and KBT1b.png). Attached please also find a sample project (KBT1.zip). Please unzip KBT1.zip and run the simulation. You may plot "despersion_sweep_reflection.DAT" and "despersion_sweep_transmission.DAT" from the Data Manager.

How can I import my own radiation patterns in Terrano *.rad where I have for each antenna in the transmitter and receiver both the co-polarized and cross-polarized radiation patterns? Also, do you have the manual of Terrano?

. To import a radiation patterns (*.rad) in [[EM.Terrano]] open the property dialog of the transmitter set (or receiver set) and select the radio button labeled User Defined Antenna Pattern as the radiator type. Then click the Import button of the dialog. The Windows standard Open dialog opens up with the file type set to ".RAD". Browse your folders to find the downloaded pattern file. Select it and click the Open button. You will see the path of the downloaded file in the box next to the Import button.

Please see the Importing External Antenna Radiation Patterns for the Transmitter & Receivers section in [[EM.Terrano Tutorial Lesson 8: Simulating A Communications Link With Directional Antennas]]:
http://www.emagtech.com/wiki/index.php/EM.Terrano_Tutorial_Lesson_8:_Simulating_A_Communications_Link_With_Directional_Antennas#Importing_External_Antenna_Radiation_Patterns_for_the_Transmitter_.26_Receivers
You can view [[EM.Terrano]] Manual from the following link:
http://www.emagtech.com/wiki/index.php/EM.Terrano

All information on [[EM.Cube]] can be found from [[EM.Cube]] Wiki page
http://www.emagtech.com/wiki/index.php/EM.Cube

1. Picasso: Is it possible to define Vias that go through more than one layer ?

You can define Vias' for each layer in such a way that they are positioned/located on top of one another and are exactly the same.

2. Why loss tangent is not automatically specified for known commercial materials, e.g. RO4003C ?

Thank you for bringing it into our attention. We will add it in the next released version.

3. Is it possible to Copy and object together with rotation/mirror ?

Mirror operation keeps the original object and create a new one. Yet, in rotation the original object will change. For this reason you may copy and the rotate the copied object.

4. Can [[EM.Cube|EM-cube]] support metal surface roughness (this is crucial for high microwave applications) ?

We do not have a parameter for the surface roughness in [[EM.Picasso]]. However, there is a relation between the surface roughness and the effective conductivity. You can use "Conductive Sheet Traces" with the effective conductivity. and rms height instead of "PEC Traces". We will add this option in the next release.

1) How do I write the Python Code for my own objects and add it to the simulation? Is it possible to access some part of the code for reference?

The following link provide an example how to write a Python script

http://www.emagtech.com/wiki/index.php/EM.Tempo_Tutorial_Lesson_7:_Designing_A_Pyramidal_Horn_Antenna#Writing_a_Python_Script_for_Calculation_of_Pyramidal_Horn_Directivity

Here is a more detailed information on [[Using Python to Create Functions, Models & Scripts]]

http://www.emagtech.com/wiki/index.php/Using_Python_to_Create_Functions,_Models_%26_Scripts

2) For modelling of wired antennas, I have used thin wires for respective elements. How will I consider the geometry of a thin wire for calculating current densities in each element? Also, do I have to take only thin wires or while modelling wired antennas or will cylindrical structures do?

In [[EM.Libera]], if you open up he Thin Wire dialog, in the property dialog, you can change the define the wire radius from "Wire Radius" box. In other words, it’s a tiny cylinder with small radius of "Wire Radius."

Please see "Constructing the Wire Dipole Antenna Geometry" section in the [[EM.Libera Tutorial Lesson 1: Analyzing A Center-Fed Wire Dipole Antenna]]

http://www.emagtech.com/wiki/index.php/EM.Libera_Tutorial_Lesson_1:_Analyzing_A_Center-Fed_Wire_Dipole_Antenna#Constructing_the_Wire_Dipole_Antenna_Geometry

3) What exactly is the function of a 'Port Definition'? How is it used in calculating the antenna parameters?

Ports are defined to calculate the scattering, impedance and admittance parameters of a one-port or multiport structure.

Port Definition Observable

http://www.emagtech.com/wiki/index.php/Glossary_of_EM.Cube%27s_Simulation_Observables_%26_Graph_Types#Port_Definition_Observable

Graphing Port Characteristics & Other Complex-Valued Data

http://www.emagtech.com/wiki/index.php/Defining_Project_Observables_%26_Visualizing_Output_Data#Graphing_Port_Characteristics_.26_Other_Complex-Valued_Data

4) How do I use the 'Wire gap circuit source' in between two thin wires? If it is not possible, is there any other method of excitation?

A wire gap source must always be associated with an existing line object in the project workspace. Please note that when you define your line object say 150 mm, the wire gap source creates an infinitesimal gap on the line, i.e. create two lines of 75 mm length, and connects a voltage source across the gap. All happens behind the scene. Please look at Examining the Gap Source & Simulation Observables in Lesson 1

http://www.emagtech.com/wiki/index.php/EM.Libera_Tutorial_Lesson_1:_Analyzing_A_Center-Fed_Wire_Dipole_Antenna#Examining_the_Gap_Source_.26_Simulation_Observables

1. How do i set simultaneous excitation of multiple ports ?
2. Can i use amplitude of -1 in order to create a 180 phase shift between ports in the FDTD simulation ?
otherwise, how can i stimulate 2 ports with 180 degrees phase shift ?
3. Can i choose some ports to be stimulated and others with no stimulation (just as a termination) ?

You can define multiple sources that will set the corresponding ports. In [[EM.Cube]] amplitude of the source should not be negative. For this reason, in order to introduce phase shift of 180 deg., you can click on "Waveform..." button in the "Source Properties" section of a Source dialog window. In the "Excitation Waveform" dialog window, set the Amplitude to 1 and the Phase to 180. Similarly, by setting the Amplitudes of some sources to 0 (zero) you can let some ports to be stimulated while those with zero amplitude without any stimulation (terminated).

To calculate S11-S12, you can do post-processing by getting them into Python. You can perform some operations (add, subtraction ...) on RCSs, Radiation Patterns, Field Sensors, etc. Yet, we do not have any Python function for S-parameter operations. We will implement some new Python in the next [[EM.Cube]] release.

Installing EM.Cube

2022-08-26T13:57:54Z

Asabet:

What's New in EM.Cube R21.1?

2022-06-01T12:57:40Z

Asabet: Created page with "720px MODULAR 3D ELECTROMAGNETIC SIMULATION SUITE <font color="#70798..."

[[Image:Splash-generic2.jpg|right|720px]]
MODULAR 3D ELECTROMAGNETIC SIMULATION SUITE 
      THAT GROWS WITH YOUR MODELING NEEDS
<table>
<tr>
<td>[[image:Cube-icon.png | link=Getting_Started_with_EM.Cube]] [[image:cad-ico.png | link=Building_Geometrical_Constructions_in_CubeCAD]] [[image:fdtd-ico.png | link=EM.Tempo]] [[image:prop-ico.png | link=EM.Terrano]] [[image:static-ico.png | link=EM.Ferma]] [[image:planar-ico.png | link=EM.Picasso]] [[image:metal-ico.png | link=EM.Libera]] [[image:po-ico.png | link=EM.Illumina]] </td>
<tr>
</table>

[[Image:Back_icon.png|30px]] '''[[EM.Cube | Back to EM.Cube Main Page]]'''

=== EM.Cube R21.1 Release At A Glance ===

The new [[EM.Cube]] R21.1 release is the most powerful electromagnetic simulation suite EMAG Technologies Inc. has ever produced in its history of more than two decades. The new release offers a combination of state-of-the-art simulation capabilities that reflect the latest advances in computational electromagnetics (CEM) as well as productivity features requested by our valued users.

=== New EM.Tempo (FDTD) Features ===

*New source arrays of lumped, waveguide, microstrip, CPW and coaxial types with phased array and AESA capability including classic weight distribution types (One-Parameter Taylor-Kaiser, Taylor N-bar, Bayliss N-bar, etc.) and user-defined complex weights
*New plots of material parameters vs. frequency for dispersive and gyrotropic material types
*New polarimetric scattering matrix sweep simulation as a special type of the RCS observable
*Improved radiation pattern and RCS observables with partial elevation and azimuth angle definitions
*Improved array factor definition for the radiation pattern observable with user defined amplitude and phase distribution including classic weight distribution types (One-Parameter Taylor-Kaiser, Taylor N-bar, Bayliss N-bar, etc.) and user-defined complex weights
*Improved antenna wizards with fast ports acceleration

=== New EM.Terrano (Ray Tracing) Features ===

*Improved ray angular resolution for SBR simulation of large propagation scenes
*New 2D long-haul channel analyzer incorporating spherical earth, knife edge diffraction, rough surface diffusion and atmospheric effects
*New 2D terrain profiler with smoothing filters
*Streamlined handling of multi-transmitter scenarios
*New phased array and AESA capability in multi-transmitter and multi-receiver scenarios including classic weight distribution types (One-Parameter Taylor-Kaiser, Taylor N-bar, Bayliss N-bar, etc.) and user-defined complex weights
*New analog modulation schemes and improved digital waveform capability
*New link margin analysis for both analog and digital modulation schemes
*Definition of connectivity maps based on link margin
*New plane wave source for 3D Field Solver
*New far-field observables for 3D Field Solver including radiation pattern, bistatic and monostatic RCS and polarimetric scattering matrix sweep based on equivalent Huygens surface integration
*Improved radar link solver with a new radar-target positional sweep mode
*Improved scatterer sets with options of spherical targets and imported polarimetric scattering matrix files
*New parameterized PEC and dielectric spherical targets with analytical Mie solutions
*Improved ray visualization of transmitter sweep results
*Improved rotational sweep with simultaneous rotation of transmit and receive antennas
*Improved mobile sweep with varying Eulerian rotation angles of both transmitter and receiver nodes
*New communication link calculator tool
*New radar link calculator tool
*Import of DTED0, DTED1 and DTED2 terrain models
*New Terrain Manager utility with quick view and statistical report capability for importing, cropping, rescaling and repositioning terrain models
*New longitude-latitude (LL) coordinates in the Status Bar and new Python functions for setting and getting the origin’s LL coordinates
*Improved standard atmosphere model
*New non-standard atmosphere models including piecewise linear modified refractivity profiles with one or two break points as well as more general user-defined non-standard M-profiles in the form of piecewise cubic polynomial functions of height
*Analysis of atmospheric propagation through surface and elevated ducts
*New ground database generator for defining the material properties of the earth’s surface using elevation-based or land use map-based classification schemes
*Improved random city, office building, and basic link wizards
*Improved mobile path wizard with new options for monostatic radar and target nodes and template for user-defined cartesian-file-based paths
*New sea surface wizard with different sea states and Douglas and Beaufort scales
*New basic radar wizard
*New Python function for DEM and DTED import
*New Python function for calculating the maximum and RMS height of the terrain
*New Python function for setting the RMS height of rough Earth surface

=== New EM.Picasso (Planar MoM) and EM.Libera (Surface MOM & Wire MOM) Features ===

*New source arrays of strip gap, wire gap, probe gap and scattering port types with phased array and AESA capability including classic weight distribution types (One-Parameter Taylor-Kaiser, Taylor N-bar, Bayliss N-bar, etc.) and user-defined complex weights
*New polarimetric scattering matrix sweep simulation as a special type of the RCS observable
*Improved radiation pattern and RCS observables with partial elevation and azimuth angle definitions
*Improved array factor definition for the radiation pattern observable with user defined amplitude and phase distribution including classic weight distribution types (One-Parameter Taylor-Kaiser, Taylor N-bar, Bayliss N-bar, etc.) and user-defined complex weights

=== New EM.Illumina (Physical Optics) Features ===

*New improved formulation of lossy dielectric and dielectric-coated PEC objects based on the method of equivalent current approximation (MECA)
*New focused Gaussian beam source with higher-order Hermite-Gauss modal profile
*New point transmitter source with user defined radiation pattern
*Multi-transmitter source arrays with phased array and AESA capability including classic weight distribution types (One-Parameter Taylor-Kaiser, Taylor N-bar, Bayliss N-bar, etc.) and user-defined complex weights
*Huygens source arrays with user defined amplitude and phase distribution including classic weight distribution types (One-Parameter Taylor-Kaiser, Taylor N-bar, Bayliss N-bar, etc.) and user-defined complex weights
*New option for PO input file to read mesh data from an externally generated file
*New polarimetric scattering matrix sweep simulation as a special type of the RCS observable
*Improved radiation pattern and RCS observables with partial elevation and azimuth angle definitions

=== New CubeCAD Features ===

*Improved polymesh objects with mesh statistics, better control over primitives and more display options
*New mesh generation scheme in CubeCAD based on the tessellated model of objects for rendering
*Improved STL import of large structures and scenes
*More control over STL export including mesh type and resolution
*Improved parametric surface generator with option to generate a polymesh surface
*Improved parametric curve generator with option to generate a polyline
*New Hilbert space-filling curve option in parametric curve generator
*Improved nodal curves (polyline and NURBS curve) and nodal surfaces (polystrip and NURBS surface) with option for saving and loading the node data
*New Python commands for generating polylines and polystrips from a data file or a text string
*New Python command for extracting part of a nodal curve
*Improved roughen tool with new option to freeze a random rough surface into a tessellated surface object
*Improved random group tool with new option to freeze a random cloud in to a fixed group object
*New parameterization of generic objects resulting from geometric transformations

=== New General Features ===

*New array pattern synthesis tool including Schelkunoff, Sectoral beam, Woodward-Lawson synthesis methods, and particle swarm optimization (PSO)
*New u-v plots of radiation pattern and RCS
*New elevation-azimuth plots of radiation pattern and RCS
*New contour plots of radiation pattern and RCS
*Improved and streamlined interface between [[EM.Cube]] and [[NeoScan]] field measurement data
*[[RF.Spice A/D]] device manager now integrated within [[EM.Cube]] under Tools Menu
*A large number of transmission line calculator and designer tools as part of [[RF.Spice A/D]] device manager
*New capability of generating reusable Touchstone-style S-parameter-based circuit models for use in [[RF.Spice A/D]] from full-wave simulation data
*Capability of designing custom circuit symbols and pin diagrams using [[RF.Spice A/D]] device manager’s symbol editor
*Improved Python interpreter and command line output
*New convenient Python scripting utility in addition to the command line
*New Python command for running Python scripts from the command line
*New Python functions for generating 2D cuts of radiation pattern and RCS
*New amplitude-only graphs of S-parameters
*Improved polar plot capability with user defined dB scale
*Plotting of two and three simultaneous data sets
*Logarithmic scale for the X and Y axes of 2D cartesian graphs
*More control over the default scale settings (linear vs. dB) of 2D and 3D graphs
*New capability of saving and loading individual graph settings and customization of 2D and 3D graphs based on previous templates
*More file operations such as renaming and copying files within Data Manager
*New basic data generator for examining user-defined mathematical and Python functions
*New basic and image-based data generator for importing data from a graph image

 

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[[Image:Back_icon.png|30px]] '''[[EM.Cube | Back to EM.Cube Main Page]]'''

EM.Cube

2022-05-31T18:01:23Z

Asabet:

[[File:emcubePAGE.png|thumb|450px]]
MODULAR 3D ELECTROMAGNETIC SIMULATION SUITE 
      THAT GROWS WITH YOUR MODELING NEEDS
<table>
<tr>
<td>[[image:Cube-icon.png | link=Getting_Started_with_EM.Cube]] [[image:cad-ico.png | link=Building_Geometrical_Constructions_in_CubeCAD]] [[image:fdtd-ico.png | link=EM.Tempo]] [[image:prop-ico.png | link=EM.Terrano]] [[image:static-ico.png | link=EM.Ferma]] [[image:planar-ico.png | link=EM.Picasso]] [[image:metal-ico.png | link=EM.Libera]] [[image:po-ico.png | link=EM.Illumina]]</td>
<tr>
</table>

'''Welcome to EM.Cube Wiki!'''

== [[image:Cube-icon.png | link=Getting_Started_with_EM.Cube]][[image:cad-ico.png | link=Building_Geometrical_Constructions_in_CubeCAD]] EM.Cube Suite Documentation ==

* [[Getting Started with EM.Cube]]
* [[What%27s_New_in_EM.Cube_R21.1%3F | What's New in EM.Cube 2021?]]
* [[A Review of Maxwell's Equations & Computational Electromagnetics (CEM)]]
* [[Numerical Modeling of Electromagnetic Problems Using EM.Cube]]
* [[Building Geometrical Constructions in CubeCAD]]
* [[Preparing Physical Structures for Electromagnetic Simulation]]
* [[Defining Project Observables & Visualizing Output Data]]
* [[Parametric Modeling & Simulation Modes in EM.Cube]]
* [[Using Python to Create Functions, Models & Scripts]]
* [[Hybrid Modeling in EM.Cube Using Multiple Simulation Engines]]

* [[Glossary of EM.Cube's Basic File, Edit & View Operations]]
* [[Glossary of EM.Cube's Standard Geometric Objects]]
* [[Glossary of EM.Cube's CAD Tools]]
* [[Glossary of EM.Cube's Materials, Sources, Devices & Other Physical Object Types]]



* [[Glossary of EM.Cube's Observables, Data & Graph Types]]
* [[Glossary of EM.Cube's Simulation-Related Operations]]
* [[Glossary of EM.Cube's Wizards]]
* [[Glossary of EM.Cube's Python Functions]]
* [[EM.Cube Application Gallery]]
 

== [[image:fdtd-ico.png]] EM.Tempo Documentation ==

[[EM.Tempo|EM.Tempo Manual]]

[[EM.Tempo]] Tutorial Lessons

* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_1.pdf EMTempo Tutorial Lesson 1: Analyzing A Center-Fed Resonant Dipole Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson1.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_2.pdf EMTempo Tutorial Lesson 2: Analyzing Scattering From A Sphere] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson2.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_3.pdf EMTempo Tutorial Lesson 3: Modeling A Probe-Fed Microstrip Patch Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson3.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_4.pdf EMTempo Tutorial Lesson 4: Modeling A Patch Antenna Array] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson4.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_5.pdf EMTempo Tutorial Lesson 5: Analyzing A Planar Microstrip Band-Stop Filter] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson5.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_6.pdf EMTempo Tutorial Lesson 6: Modeling Rectangular Waveguide Structures] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson6.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_7.pdf EMTempo Tutorial Lesson 7: Designing A Pyramidal Horn Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson7.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_8.pdf EMTempo Tutorial Lesson 8: Analyzing A Periodic Frequency Selective Surface] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson8.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_9.pdf EMTempo Tutorial Lesson 9: Modeling Coplanar Waveguide Structures And Lumped Devices] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson9.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_10.pdf EMTempo Tutorial Lesson 10: Modeling Wave Propagation In Dispersive Media] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson10.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_11.pdf EMTempo Tutorial Lesson 11: Simulating A Monopole Antenna Interacting With A Human Head Model] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson11.zip [Download projects]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Tempo L1 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_1.pdf]]
| style="width:50px;" | [[image:Tempo L2 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_2.pdf]]
| style="width:50px;" | [[image:Tempo L3 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_3.pdf]]
| style="width:50px;" | [[image:Tempo L4 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_4.pdf]]
| style="width:50px;" | [[image:Tempo L5 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_5.pdf]]
| style="width:50px;" | [[image:Tempo L6 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_6.pdf]]
| style="width:50px;" | [[image:Tempo L7 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_7.pdf]]
| style="width:50px;" | [[image:Tempo L8 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_8.pdf]]
| style="width:50px;" | [[image:Tempo L9 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_9.pdf]]
| style="width:50px;" | [[image:Tempo L10 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_10.pdf]]
| style="width:50px;" | [[image:Tempo L11 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_11.pdf]]
|}
 

== [[image:prop-ico.png]] EM.Terrano Documentation ==

[[EM.Terrano|EM.Terrano Manual]]

[[EM.Terrano]] Tutorial Lessons

* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_1.pdf EM.Terrano Tutorial Lesson 1: Analyzing A Basic Line-Of-Sight Propagation Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson1.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_2.pdf EM.Terrano Tutorial Lesson 2: Examining A Polarimetric Propagation Channel] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson2.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_3.pdf EM.Terrano Tutorial Lesson 3: Analyzing A Multipath Outdoor Propagation Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson3.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_4.pdf EM.Terrano Tutorial Lesson 4: Analyzing Indoor Propagation Inside a Building Model with Penetrable Walls] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson4.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_5.pdf EM.Terrano Tutorial Lesson 5: Simulating A Dense Urban Canyon Propagation Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson5.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_6.pdf EM.Terrano Tutorial Lesson 6: Modeling Irregular Terrain] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson6.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_7.pdf EM.Terrano Tutorial Lesson 7: Parametric Study Of A Realistic Urban Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson7.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_8.pdf EM.Terrano Tutorial Lesson 8: Simulating A Communications Link With Directional Antennas] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson8.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_9.pdf EM.Terrano Tutorial Lesson 9: A SBR Channel Analysis of An Urban Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson9.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_10.pdf EM.Terrano Tutorial Lesson 10: Modeling A Mobile Communications Link] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson10.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_11.pdf EM.Terrano Tutorial Lesson 11: Performing Link Margin Analysis Over the Spherical Earth] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson11.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_12.pdf EM.Terrano Tutorial Lesson 12: Simulating a Communication Link Involving Software-Defined Radios] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson12.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_13.pdf EM.Terrano Tutorial Lesson 13: Simulating Links with Directional Antennas on Rotating Platforms] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson13.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_14.pdf EM.Terrano Tutorial Lesson 14: Atmospheric Propagation Effects & Tropospheric Ducting] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson14.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_15.pdf EM.Terrano Tutorial Lesson 15: Performing Link Margin Analysis on a Realistic Terrain Model] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson15.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_16.pdf EM.Terrano Tutorial Lesson 16: Performing Link Margin Analysis above a Sea Surface Model] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson16.zip [Download projects]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Terrano L1 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_1.pdf]]
| style="width:50px;" | [[image:Terrano L2N Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_2.pdf]]
| style="width:50px;" | [[image:Terrano L3N Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_3.pdf]]
| style="width:50px;" | [[image:Terrano L4N Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_4.pdf]]
| style="width:50px;" | [[image:Terrano L5N Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_5.pdf]]
| style="width:50px;" | [[image:Terrano L6N Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_6.pdf]]
| style="width:50px;" | [[image:Terrano L7N Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_7.pdf]]
| style="width:50px;" | [[image:Terrano L8N Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_8.pdf]]
| style="width:50px;" | [[image:Terrano L9N Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_9.pdf]]
|}
 

== [[image:static-ico.png]] EM.Ferma Documentation ==

[[EM.Ferma|EM.Ferma Manual]]

[[EM.Ferma]] Tutorial Lessons

* [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_1.pdf EM.Ferma Tutorial Lesson 1: Computing The Electric Field & Potential Due To Spherical Charges] [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson1.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_2.pdf EM.Ferma Tutorial Lesson 2: Analyzing A Parallel Plate Capacitor] [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson2.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_3.pdf EM.Ferma Tutorial Lesson 3: Modeling Objects Immersed In A Uniform Electric Field] [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson3.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_4.pdf EM.Ferma Tutorial Lesson 4: Computing The Magnetic Field Of Linear Currents In Free Space & Magnetic Media] [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson4.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_5.pdf EM.Ferma Tutorial Lesson 5: Modeling Solenoids & Toroidal Coils] [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson5.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_6.pdf EM.Ferma Tutorial Lesson 6: Analyzing Permanent Magnets] [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson6.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_7.pdf EM.Ferma Tutorial Lesson 7: Analyzing A Microstrip Transmission Line] [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson7.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_8.pdf EM.Ferma Tutorial Lesson 8: Modeling 2D Coplanar Waveguide Structures] [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson8.zip [Download projects]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Ferma L1 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_1.pdf]]
| style="width:50px;" | [[image:Ferma L2 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_2.pdf]]
| style="width:50px;" | [[image:Ferma L3 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_3.pdf]]
| style="width:50px;" | [[image:Ferma L4 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_4.pdf]]
| style="width:50px;" | [[image:Ferma L5 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_5.pdf]]
| style="width:50px;" | [[image:Ferma L6 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_6.pdf]]
| style="width:50px;" | [[image:Ferma L7 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_7.pdf]]
| style="width:50px;" | [[image:Ferma L8 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_8.pdf]]
|}
 

== [[image:planar-ico.png]] EM.Picasso Documentation ==

[[EM.Picasso|EM.Picasso Manual]]

[[EM.Picasso]] Tutorial Lessons

* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_1.pdf EM.Picasso Tutorial Lesson 1: Analyzing A Microstrip-Fed Patch Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson1.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_2.pdf EM.Picasso Tutorial Lesson 2: Designing A Patch Antenna With A Recessed Feed] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson2.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_3.pdf EM.Picasso Tutorial Lesson 3: Analyzing A Planar Microstrip Band-Stop Filter] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson3.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_4.pdf EM.Picasso Tutorial Lesson 4: Designing A Circularly Polarized Probe-Fed Patch Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson4.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_5.pdf EM.Picasso Tutorial Lesson 5: Analyzing Patch Antenna Arrays] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson5.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_6.pdf EM.Picasso Tutorial Lesson 6: Analyzing A Periodic Frequency Selective Surface] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson6.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_7.pdf EM.Picasso Tutorial Lesson 7: Designing A Slot-Coupled Patch Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson7.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_8.pdf EM.Picasso Tutorial Lesson 8: Analyzing A CPW-Fed Folded Dipole Slot Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson8.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_9.pdf EM.Picasso Tutorial Lesson 9: Designing a Microstrip Wilkinson Power Divider] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson9.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_10.pdf EM.Picasso Tutorial Lesson 10: Optimizing A Microstrip Patch Antenna Design] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson10.zip [Download projects]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Picasso L1 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_1.pdf]]
| style="width:50px;" | [[image:Picasso L2 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_2.pdf]]
| style="width:50px;" | [[image:Picasso L3 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_3.pdf]]
| style="width:50px;" | [[image:Picasso L4 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_4.pdf]]
| style="width:50px;" | [[image:Picasso L5 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_5.pdf]]
| style="width:50px;" | [[image:Picasso L6 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_6.pdf]]
| style="width:50px;" | [[image:Picasso L7 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_7.pdf]]
| style="width:50px;" | [[image:Picasso L8 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_8.pdf]]
| style="width:50px;" | [[image:Picasso L9 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_9.pdf]]
| style="width:50px;" | [[image:Picasso L10 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_10.pdf]]
|}
 

== [[image:metal-ico.png]] EM.Libera Documentation ==

[[EM.Libera|EM.Libera Manual]]

[[EM.Libera]] Tutorial Lessons

* [http://www.emagtech.com/downloads/ProjectRepo/EMLibera_Lesson_1.pdf EM.Libera Tutorial Lesson 1: Analyzing A Center-Fed Wire Dipole Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMLibera_Lesson1.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMLibera_Lesson_2.pdf EM.Libera Tutorial Lesson 2: Designing A Yagi-Uda Dipole Array] [http://www.emagtech.com/downloads/ProjectRepo/EMLibera_Lesson2.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMLibera_Lesson_3.pdf EM.Libera Tutorial Lesson 3: Computing The Radar Cross Section Of Metallic, Dielectric & Composite Targets] [http://www.emagtech.com/downloads/ProjectRepo/EMLibera_Lesson3.zip [Download projects]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Libera L1 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMLibera_Lesson_1.pdf]]
| style="width:50px;" | [[image:Libera L2 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMLibera_Lesson_2.pdf]]
| style="width:50px;" | [[image:Libera L3 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMLibera_Lesson_3.pdf]]
|}
 

== [[image:po-ico.png]] EM.Illumina Documentation ==

[[EM.Illumina|EM.Illumina Manual]]

[[EM.Illumina]] Tutorial Lessons

* [http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson_1.pdf EM.Illumina Tutorial Lesson 1: Analyzing The Scattering From Metal Targets] [http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson1.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson_2.pdf EM.Illumina Tutorial Lesson 2: Computing The Radar Cross Section Of Corner Reflectors] [http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson2.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson_3.pdf EM.Illumina Tutorial Lesson 3: Computing The Radiation Pattern Of Parabolic Dish Reflectors] [http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson3.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson_4.pdf EM.Illumina Tutorial Lesson 4: Simulating Radiation In The Presence Of Large Metallic Shipboard Platforms] [http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson4.zip [Download projects]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Illumina L1 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson_1.pdf]]
| style="width:50px;" | [[image:Illumina L2 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson_2.pdf]]
| style="width:50px;" | [[image:Illumina L3 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson_3.pdf]]
| style="width:50px;" | [[image:Illumina L4 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson_4.pdf]]
|}

 

== [[image:Cube-icon.png | link=Getting_Started_with_EM.Cube]] EM.Cube Articles & Notes ==

Verification & Validation Articles

* [[V&V Article 1: Modeling Complex Frequency Selective Surfaces Using EM.Cube]]

* [[V&V Article 2: Computing Radar Cross Section Of Metallic Targets Using EM.Cube]]

* [[V&V Article 3: Modeling Broadband And Circularly Polarized Patch Antennas Using EM.Picasso]]

* [[V&V Article 4: Designing Wideband Dielectric Resonator Antennas Using EM.Tempo]]

* [[V&V Article 5: Modeling Dispersive Materials Using EM.Tempo]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:ART FSS title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_1:_Modeling_Complex_Frequency_Selective_Surfaces_Using_EM.Cube]]
| style="width:50px;" | [[image:ART RCS title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_2:_Computing_Radar_Cross_Section_Of_Metallic_Targets_Using_EM.Cube]]
| style="width:50px;" | [[image:ART UWB title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_3:_Modeling_Broadband_And_Circularly_Polarized_Patch_Antennas_Using_EM.Picasso]]
| style="width:50px;" | [[image:ART DRA title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_4:_Designing_Wideband_Dielectric_Resonator_Antennas_Using_EM.Tempo]]
| style="width:50px;" | [[image:ART DISP title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_5:_Modeling_Dispersive_Materials_Using_EM.Tempo]]
|}

Application Notes

* [[Application Note 1: Modeling Radar Signature Of Real-Sized Aircraft Using EM.Tempo]]

* [[Application Note 2: Modeling Polarimetric Wave Propagation In The Lower Manhattan Scene Using EM.Terrano]]

* [[Application Note 3: Designing A Slot-Coupled Patch Antenna Array With A Corporate Feed Network Using EM.Picasso]]

* [[Application Note 4: Modeling Large Parabolic Reflectors Illuminated By Pyramidal Horn Antennas Using EM.Cube]]

* [[Application Note 5: Simulating The Performance Of Installed Antennas On Vehicular Platforms Using EM.Tempo]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:ART AIR title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_1:_Modeling_Radar_Signature_Of_Real-Sized_Aircraft_Using_EM.Tempo]]
| style="width:50px;" | [[image:ART MANH Fig title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_2:_Modeling_Polarimetric_Wave_Propagation_In_The_Lower_Manhattan_Scene_Using_EM.Terrano]]
| style="width:50px;" | [[image:ART PATCH Fig title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_3:_Designing_A_Slot-Coupled_Patch_Antenna_Array_With_A_Corporate_Feed_Network_Using_EM.Picasso]]
| style="width:50px;" | [[image:ART PARAB Fig title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_4:_Modeling_Large_Parabolic_Reflectors_Illuminated_By_Pyramidal_Horn_Antennas_Using_EM.Cube]]
| style="width:50px;" | [[image:ART GOLF Fig title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_5:_Simulating_The_Performance_Of_Installed_Antennas_On_Vehicular_Platforms_Using_EM.Tempo]]
|}
 

<hr>

[[Image:Top_icon.png|30px]] '''[[EM.Cube#EM.Cube Suite Documentation | Back to the Top of the Page]]'''

[[Image:Back_icon.png|30px]] '''[[Main_Page | Back to Emagtech Wiki Gateway]]'''

[[image:RFSpice-ico.png | link=RF.Spice A/D]]   '''[[RF.Spice A/D | Visit RF.Spice A/D Wiki Site]]'''

[[image:NeoScan-ico.png | link=NeoScan]]   '''[[NeoScan | Visit NeoScan Wiki Site]]'''

New Tutorials

2022-05-31T18:00:36Z

Asabet:

== EM.Cube Tutorials ==

Each tutorial lesson listed below walks you through the basic features of one of [[EM.Cube]]'s computational modules:

----------------------------------------------------------------------------------------

[[What%27s_New_in_EM.Cube_R20.1%3F | What's New in EM.Cube 2020?]]

Old [[EM.Tempo]] Tutorial Lessons

* [[EM.Tempo Tutorial Lesson 1: Analyzing A Center-Fed Resonant Dipole Antenna]]
* [[EM.Tempo Tutorial Lesson 2: Analyzing Scattering From A Sphere]]
* [[EM.Tempo Tutorial Lesson 3: Modeling A Probe-Fed Microstrip Patch Antenna]]
* [[EM.Tempo Tutorial Lesson 4: Modeling A Patch Antenna Array]]
* [[EM.Tempo Tutorial Lesson 5: Analyzing A Planar Microstrip Band-Stop Filter]]
* [[EM.Tempo Tutorial Lesson 6: Modeling Rectangular Waveguide Structures]]
* [[EM.Tempo Tutorial Lesson 7: Designing A Pyramidal Horn Antenna]]
* [[EM.Tempo Tutorial Lesson 8: Analyzing A Periodic Frequency Selective Surface]]
* [[EM.Tempo Tutorial Lesson 9: Modeling Coplanar Waveguide Structures And Lumped Devices]]
* [[EM.Tempo Tutorial Lesson 10: Modeling Wave Propagation In Dispersive Media]]
* [[EM.Tempo Tutorial Lesson 11: Simulating A Monopole Antenna Interacting With A Human Head Model]]

Old [[EM.Terrano]] Tutorial Lessons

* [[EM.Terrano Tutorial Lesson 1: Analyzing A Basic Line-Of-Sight Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 2: Examining A Polarimetric Propagation Channel]]
* [[EM.Terrano Tutorial Lesson 3: Analyzing A Multipath Outdoor Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 4: Analyzing Indoor Propagation Inside a Building Model with Penetrable Walls]]
* [[EM.Terrano Tutorial Lesson 5: Simulating A Dense Urban Canyon Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 6: Modeling Irregular Terrain]]
* [[EM.Terrano Tutorial Lesson 7: Parametric Study Of A Realistic Urban Scene]]
* [[EM.Terrano Tutorial Lesson 8: Simulating A Communications Link With Directional Antennas]]
* [[EM.Terrano Tutorial Lesson 9: A SBR Channel Analysis of An Urban Scene]]
* [[EM.Terrano Tutorial Lesson 10: Modeling A Mobile Communications Link]]

Old [[EM.Ferma]] Tutorial Lessons

* [[EM.Ferma Tutorial Lesson 1: Computing The Electric Field & Potential Due To Spherical Charges]]
* [[EM.Ferma Tutorial Lesson 2: Analyzing A Parallel Plate Capacitor]]
* [[EM.Ferma Tutorial Lesson 3: Modeling Objects Immersed In A Uniform Electric Field]]
* [[EM.Ferma Tutorial Lesson 4: Computing The Magnetic Field Of Linear Currents In Free Space & Magnetic Media]]
* [[EM.Ferma Tutorial Lesson 5: Modeling Solenoids & Toroidal Coils]]
* [[EM.Ferma Tutorial Lesson 6: Analyzing Permanent Magnets]]
* [[EM.Ferma Tutorial Lesson 7: Analyzing A Microstrip Transmission Line]]
* [[EM.Ferma Tutorial Lesson 8: Modeling 2D Coplanar Waveguide Structures]]

Old [[EM.Picasso]] Tutorial Lessons

* [[EM.Picasso Tutorial Lesson 1: Analyzing A Microstrip-Fed Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 2: Designing A Patch Antenna With A Recessed Feed]]
* [[EM.Picasso Tutorial Lesson 3: Analyzing A Planar Microstrip Band-Stop Filter]]
* [[EM.Picasso Tutorial Lesson 4: Designing A Circularly Polarized Probe-Fed Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 5: Analyzing Patch Antenna Arrays]]
* [[EM.Picasso Tutorial Lesson 6: Analyzing A Periodic Frequency Selective Surface]]
* [[EM.Picasso Tutorial Lesson 7: Designing A Slot-Coupled Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 8: Analyzing A CPW-Fed Folded Dipole Slot Antenna]]
* [[EM.Picasso Tutorial Lesson 9: Designing a Microstrip Wilkinson Power Divider]]
* [[EM.Picasso Tutorial Lesson 10: Optimizing A Microstrip Patch Antenna Design]]

Old [[EM.Libera]] Tutorial Lessons

* [[EM.Libera Tutorial Lesson 1: Analyzing A Center-Fed Wire Dipole Antenna]]
* [[EM.Libera Tutorial Lesson 2: Designing A Yagi-Uda Dipole Array]]
* [[EM.Libera Tutorial Lesson 3: Computing The Radar Cross Section Of Metallic, Dielectric & Composite Targets]]

Old [[EM.Illumina]] Tutorial Lessons

* [[EM.Illumina Tutorial Lesson 1: Analyzing The Scattering From Metal Targets]]
* [[EM.Illumina Tutorial Lesson 2: Computing The Radar Cross Section Of Corner Reflectors]]
* [[EM.Illumina Tutorial Lesson 3: Computing The Radiation Pattern Of Parabolic Dish Reflectors]]
* [[EM.Illumina Tutorial Lesson 4: Simulating Radiation In The Presence Of Large Metallic Shipboard Platforms]]

These are the new pages added or modified for [[EM.Cube]] Release R17:

[[New PO Theory]]

[[What's New in EM.Cube R19.1]]

[[OLD What's New in EM.Cube R18.1?]]

[[What's New in EM.Cube R20.1?]]

[[Glossary of EM.Cube's Materials & Other Physical Object Types]]

[[Glossary of EM.Cube's Sources & Devices]]

[[EM.Terrano Tutorial Lesson 4: Analyzing Indoor Propagation Inside a Building Model with Penetrable Walls]]

[[EM.Terrano Tutorial Lesson 9: A SBR Channel Analysis of An Urban Scene]]

[[EM.Terrano Tutorial Lesson 10: Modeling A Mobile Communications Link]]

----------------------------------------------------------------------------------------

These are the old [[EM.Cube]] documentation pages:

[[The Old EM.Cube Wiki Start Page]]

[[THE OLD Getting Started with EM.Cube]]

[[THE OLD What's New in EM.Cube 2016?]]

[[THE OLD Defining Simulation Observables & Visualizing Output Data]]

---------------------------------

[[V&V Article 6: Using EM.Cube And NeoScan System Together For Antenna Design]]

[[Installing EM.Cube]]

[[EM.Cube FAQ]]

----------------------------------------------------------------------------------------

These are all old stuff:

[[NeoScan_Complete]]

[[NeoScan Manuals]]

[[NeoScan Manual Part A: Getting Started]]

<table>
<tr>
<td>
{|class="wikitable"
|-
! [[EM.Cube]]
|-
|[[File:emcubePAGE.png |225px | link=EM.Cube]]
|-
|}
</td>
<td>   </td>
<td>
{|class="wikitable"
|-
! [[RF.Spice A/D | RF.Spice A/D]]
|-
| [[File:RfspicePAGE New.png |277px | link=RF.Spice A/D | RF.Spice A/D]]
|-
|}
</td>
<td>   </td>
<td>
{|class="wikitable"
|-
! [[RF.Spice A/D | B2.Spice A/D]]
|-
| [[File:B2spicePAGE.png |226px | link=RF.Spice A/D | B2.Spice A/D]]
|-
|}
</td>
<td>   </td>
<td>
{|class="wikitable"
|-
! [[NeoScan | NeoScan]]
|-
| [[File:NeoScan_Product.png |245px | link=NeoScan | NeoScan ]]
|-
|}
</td>
</tr>
</table>

----

[[Old Gateway]]

[[Old EM.Cube Page]]

[[Old Digital Glossary]]

----

[[Image:Back_icon.png|40px]] '''[[Main_Page | Back to Emagtech Wiki Gateway]]'''

What's New in EM.Cube R20.1?

2022-05-31T17:45:27Z

Asabet:

EM.Cube

2022-04-04T13:12:40Z

Asabet:

[[File:emcubePAGE.png|thumb|450px]]
MODULAR 3D ELECTROMAGNETIC SIMULATION SUITE 
      THAT GROWS WITH YOUR MODELING NEEDS
<table>
<tr>
<td>[[image:Cube-icon.png | link=Getting_Started_with_EM.Cube]] [[image:cad-ico.png | link=Building_Geometrical_Constructions_in_CubeCAD]] [[image:fdtd-ico.png | link=EM.Tempo]] [[image:prop-ico.png | link=EM.Terrano]] [[image:static-ico.png | link=EM.Ferma]] [[image:planar-ico.png | link=EM.Picasso]] [[image:metal-ico.png | link=EM.Libera]] [[image:po-ico.png | link=EM.Illumina]]</td>
<tr>
</table>

'''Welcome to EM.Cube Wiki!'''

== [[image:Cube-icon.png | link=Getting_Started_with_EM.Cube]][[image:cad-ico.png | link=Building_Geometrical_Constructions_in_CubeCAD]] EM.Cube Suite Documentation ==

* [[Getting Started with EM.Cube]]
* [[What%27s_New_in_EM.Cube_R20.1%3F | What's New in EM.Cube 2020?]]
* [[A Review of Maxwell's Equations & Computational Electromagnetics (CEM)]]
* [[Numerical Modeling of Electromagnetic Problems Using EM.Cube]]
* [[Building Geometrical Constructions in CubeCAD]]
* [[Preparing Physical Structures for Electromagnetic Simulation]]
* [[Defining Project Observables & Visualizing Output Data]]
* [[Parametric Modeling & Simulation Modes in EM.Cube]]
* [[Using Python to Create Functions, Models & Scripts]]
* [[Hybrid Modeling in EM.Cube Using Multiple Simulation Engines]]

* [[Glossary of EM.Cube's Basic File, Edit & View Operations]]
* [[Glossary of EM.Cube's Standard Geometric Objects]]
* [[Glossary of EM.Cube's CAD Tools]]
* [[Glossary of EM.Cube's Materials, Sources, Devices & Other Physical Object Types]]



* [[Glossary of EM.Cube's Observables, Data & Graph Types]]
* [[Glossary of EM.Cube's Simulation-Related Operations]]
* [[Glossary of EM.Cube's Wizards]]
* [[Glossary of EM.Cube's Python Functions]]
* [[EM.Cube Application Gallery]]
 

== [[image:fdtd-ico.png]] EM.Tempo Documentation ==

[[EM.Tempo|EM.Tempo Manual]]

[[EM.Tempo]] Tutorial Lessons

* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_1.pdf EMTempo Tutorial Lesson 1: Analyzing A Center-Fed Resonant Dipole Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson1.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_2.pdf EMTempo Tutorial Lesson 2: Analyzing Scattering From A Sphere] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson2.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_3.pdf EMTempo Tutorial Lesson 3: Modeling A Probe-Fed Microstrip Patch Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson3.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_4.pdf EMTempo Tutorial Lesson 4: Modeling A Patch Antenna Array] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson4.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_5.pdf EMTempo Tutorial Lesson 5: Analyzing A Planar Microstrip Band-Stop Filter] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson5.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_6.pdf EMTempo Tutorial Lesson 6: Modeling Rectangular Waveguide Structures] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson6.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_7.pdf EMTempo Tutorial Lesson 7: Designing A Pyramidal Horn Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson7.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_8.pdf EMTempo Tutorial Lesson 8: Analyzing A Periodic Frequency Selective Surface] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson8.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_9.pdf EMTempo Tutorial Lesson 9: Modeling Coplanar Waveguide Structures And Lumped Devices] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson9.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_10.pdf EMTempo Tutorial Lesson 10: Modeling Wave Propagation In Dispersive Media] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson10.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_11.pdf EMTempo Tutorial Lesson 11: Simulating A Monopole Antenna Interacting With A Human Head Model] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson11.zip [Download projects]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Tempo L1 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_1.pdf]]
| style="width:50px;" | [[image:Tempo L2 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_2.pdf]]
| style="width:50px;" | [[image:Tempo L3 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_3.pdf]]
| style="width:50px;" | [[image:Tempo L4 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_4.pdf]]
| style="width:50px;" | [[image:Tempo L5 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_5.pdf]]
| style="width:50px;" | [[image:Tempo L6 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_6.pdf]]
| style="width:50px;" | [[image:Tempo L7 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_7.pdf]]
| style="width:50px;" | [[image:Tempo L8 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_8.pdf]]
| style="width:50px;" | [[image:Tempo L9 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_9.pdf]]
| style="width:50px;" | [[image:Tempo L10 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_10.pdf]]
| style="width:50px;" | [[image:Tempo L11 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_11.pdf]]
|}
 

== [[image:prop-ico.png]] EM.Terrano Documentation ==

[[EM.Terrano|EM.Terrano Manual]]

[[EM.Terrano]] Tutorial Lessons

* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_1.pdf EM.Terrano Tutorial Lesson 1: Analyzing A Basic Line-Of-Sight Propagation Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson1.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_2.pdf EM.Terrano Tutorial Lesson 2: Examining A Polarimetric Propagation Channel] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson2.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_3.pdf EM.Terrano Tutorial Lesson 3: Analyzing A Multipath Outdoor Propagation Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson3.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_4.pdf EM.Terrano Tutorial Lesson 4: Analyzing Indoor Propagation Inside a Building Model with Penetrable Walls] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson4.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_5.pdf EM.Terrano Tutorial Lesson 5: Simulating A Dense Urban Canyon Propagation Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson5.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_6.pdf EM.Terrano Tutorial Lesson 6: Modeling Irregular Terrain] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson6.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_7.pdf EM.Terrano Tutorial Lesson 7: Parametric Study Of A Realistic Urban Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson7.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_8.pdf EM.Terrano Tutorial Lesson 8: Simulating A Communications Link With Directional Antennas] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson8.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_9.pdf EM.Terrano Tutorial Lesson 9: A SBR Channel Analysis of An Urban Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson9.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_10.pdf EM.Terrano Tutorial Lesson 10: Modeling A Mobile Communications Link] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson10.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_11.pdf EM.Terrano Tutorial Lesson 11: Performing Link Margin Analysis Over the Spherical Earth] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson11.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_12.pdf EM.Terrano Tutorial Lesson 12: Simulating a Communication Link Involving Software-Defined Radios] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson12.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_13.pdf EM.Terrano Tutorial Lesson 13: Simulating Links with Directional Antennas on Rotating Platforms] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson13.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_14.pdf EM.Terrano Tutorial Lesson 14: Atmospheric Propagation Effects & Tropospheric Ducting] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson14.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_15.pdf EM.Terrano Tutorial Lesson 15: Performing Link Margin Analysis on a Realistic Terrain Model] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson15.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_16.pdf EM.Terrano Tutorial Lesson 16: Performing Link Margin Analysis above a Sea Surface Model] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson16.zip [Download projects]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Terrano L1 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_1.pdf]]
| style="width:50px;" | [[image:Terrano L2N Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_2.pdf]]
| style="width:50px;" | [[image:Terrano L3N Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_3.pdf]]
| style="width:50px;" | [[image:Terrano L4N Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_4.pdf]]
| style="width:50px;" | [[image:Terrano L5N Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_5.pdf]]
| style="width:50px;" | [[image:Terrano L6N Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_6.pdf]]
| style="width:50px;" | [[image:Terrano L7N Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_7.pdf]]
| style="width:50px;" | [[image:Terrano L8N Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_8.pdf]]
| style="width:50px;" | [[image:Terrano L9N Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_9.pdf]]
|}
 

== [[image:static-ico.png]] EM.Ferma Documentation ==

[[EM.Ferma|EM.Ferma Manual]]

[[EM.Ferma]] Tutorial Lessons

* [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_1.pdf EM.Ferma Tutorial Lesson 1: Computing The Electric Field & Potential Due To Spherical Charges] [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson1.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_2.pdf EM.Ferma Tutorial Lesson 2: Analyzing A Parallel Plate Capacitor] [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson2.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_3.pdf EM.Ferma Tutorial Lesson 3: Modeling Objects Immersed In A Uniform Electric Field] [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson3.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_4.pdf EM.Ferma Tutorial Lesson 4: Computing The Magnetic Field Of Linear Currents In Free Space & Magnetic Media] [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson4.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_5.pdf EM.Ferma Tutorial Lesson 5: Modeling Solenoids & Toroidal Coils] [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson5.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_6.pdf EM.Ferma Tutorial Lesson 6: Analyzing Permanent Magnets] [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson6.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_7.pdf EM.Ferma Tutorial Lesson 7: Analyzing A Microstrip Transmission Line] [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson7.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_8.pdf EM.Ferma Tutorial Lesson 8: Modeling 2D Coplanar Waveguide Structures] [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson8.zip [Download projects]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Ferma L1 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_1.pdf]]
| style="width:50px;" | [[image:Ferma L2 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_2.pdf]]
| style="width:50px;" | [[image:Ferma L3 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_3.pdf]]
| style="width:50px;" | [[image:Ferma L4 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_4.pdf]]
| style="width:50px;" | [[image:Ferma L5 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_5.pdf]]
| style="width:50px;" | [[image:Ferma L6 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_6.pdf]]
| style="width:50px;" | [[image:Ferma L7 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_7.pdf]]
| style="width:50px;" | [[image:Ferma L8 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_8.pdf]]
|}
 

== [[image:planar-ico.png]] EM.Picasso Documentation ==

[[EM.Picasso|EM.Picasso Manual]]

[[EM.Picasso]] Tutorial Lessons

* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_1.pdf EM.Picasso Tutorial Lesson 1: Analyzing A Microstrip-Fed Patch Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson1.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_2.pdf EM.Picasso Tutorial Lesson 2: Designing A Patch Antenna With A Recessed Feed] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson2.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_3.pdf EM.Picasso Tutorial Lesson 3: Analyzing A Planar Microstrip Band-Stop Filter] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson3.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_4.pdf EM.Picasso Tutorial Lesson 4: Designing A Circularly Polarized Probe-Fed Patch Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson4.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_5.pdf EM.Picasso Tutorial Lesson 5: Analyzing Patch Antenna Arrays] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson5.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_6.pdf EM.Picasso Tutorial Lesson 6: Analyzing A Periodic Frequency Selective Surface] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson6.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_7.pdf EM.Picasso Tutorial Lesson 7: Designing A Slot-Coupled Patch Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson7.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_8.pdf EM.Picasso Tutorial Lesson 8: Analyzing A CPW-Fed Folded Dipole Slot Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson8.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_9.pdf EM.Picasso Tutorial Lesson 9: Designing a Microstrip Wilkinson Power Divider] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson9.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_10.pdf EM.Picasso Tutorial Lesson 10: Optimizing A Microstrip Patch Antenna Design] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson10.zip [Download projects]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Picasso L1 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_1.pdf]]
| style="width:50px;" | [[image:Picasso L2 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_2.pdf]]
| style="width:50px;" | [[image:Picasso L3 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_3.pdf]]
| style="width:50px;" | [[image:Picasso L4 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_4.pdf]]
| style="width:50px;" | [[image:Picasso L5 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_5.pdf]]
| style="width:50px;" | [[image:Picasso L6 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_6.pdf]]
| style="width:50px;" | [[image:Picasso L7 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_7.pdf]]
| style="width:50px;" | [[image:Picasso L8 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_8.pdf]]
| style="width:50px;" | [[image:Picasso L9 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_9.pdf]]
| style="width:50px;" | [[image:Picasso L10 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_10.pdf]]
|}
 

== [[image:metal-ico.png]] EM.Libera Documentation ==

[[EM.Libera|EM.Libera Manual]]

[[EM.Libera]] Tutorial Lessons

* [http://www.emagtech.com/downloads/ProjectRepo/EMLibera_Lesson_1.pdf EM.Libera Tutorial Lesson 1: Analyzing A Center-Fed Wire Dipole Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMLibera_Lesson1.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMLibera_Lesson_2.pdf EM.Libera Tutorial Lesson 2: Designing A Yagi-Uda Dipole Array] [http://www.emagtech.com/downloads/ProjectRepo/EMLibera_Lesson2.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMLibera_Lesson_3.pdf EM.Libera Tutorial Lesson 3: Computing The Radar Cross Section Of Metallic, Dielectric & Composite Targets] [http://www.emagtech.com/downloads/ProjectRepo/EMLibera_Lesson3.zip [Download projects]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Libera L1 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMLibera_Lesson_1.pdf]]
| style="width:50px;" | [[image:Libera L2 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMLibera_Lesson_2.pdf]]
| style="width:50px;" | [[image:Libera L3 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMLibera_Lesson_3.pdf]]
|}
 

== [[image:po-ico.png]] EM.Illumina Documentation ==

[[EM.Illumina|EM.Illumina Manual]]

[[EM.Illumina]] Tutorial Lessons

* [http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson_1.pdf EM.Illumina Tutorial Lesson 1: Analyzing The Scattering From Metal Targets] [http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson1.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson_2.pdf EM.Illumina Tutorial Lesson 2: Computing The Radar Cross Section Of Corner Reflectors] [http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson2.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson_3.pdf EM.Illumina Tutorial Lesson 3: Computing The Radiation Pattern Of Parabolic Dish Reflectors] [http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson3.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson_4.pdf EM.Illumina Tutorial Lesson 4: Simulating Radiation In The Presence Of Large Metallic Shipboard Platforms] [http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson4.zip [Download projects]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Illumina L1 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson_1.pdf]]
| style="width:50px;" | [[image:Illumina L2 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson_2.pdf]]
| style="width:50px;" | [[image:Illumina L3 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson_3.pdf]]
| style="width:50px;" | [[image:Illumina L4 Fig title.png|50px| link=http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson_4.pdf]]
|}

 

== [[image:Cube-icon.png | link=Getting_Started_with_EM.Cube]] EM.Cube Articles & Notes ==

Verification & Validation Articles

* [[V&V Article 1: Modeling Complex Frequency Selective Surfaces Using EM.Cube]]

* [[V&V Article 2: Computing Radar Cross Section Of Metallic Targets Using EM.Cube]]

* [[V&V Article 3: Modeling Broadband And Circularly Polarized Patch Antennas Using EM.Picasso]]

* [[V&V Article 4: Designing Wideband Dielectric Resonator Antennas Using EM.Tempo]]

* [[V&V Article 5: Modeling Dispersive Materials Using EM.Tempo]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:ART FSS title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_1:_Modeling_Complex_Frequency_Selective_Surfaces_Using_EM.Cube]]
| style="width:50px;" | [[image:ART RCS title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_2:_Computing_Radar_Cross_Section_Of_Metallic_Targets_Using_EM.Cube]]
| style="width:50px;" | [[image:ART UWB title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_3:_Modeling_Broadband_And_Circularly_Polarized_Patch_Antennas_Using_EM.Picasso]]
| style="width:50px;" | [[image:ART DRA title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_4:_Designing_Wideband_Dielectric_Resonator_Antennas_Using_EM.Tempo]]
| style="width:50px;" | [[image:ART DISP title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_5:_Modeling_Dispersive_Materials_Using_EM.Tempo]]
|}

Application Notes

* [[Application Note 1: Modeling Radar Signature Of Real-Sized Aircraft Using EM.Tempo]]

* [[Application Note 2: Modeling Polarimetric Wave Propagation In The Lower Manhattan Scene Using EM.Terrano]]

* [[Application Note 3: Designing A Slot-Coupled Patch Antenna Array With A Corporate Feed Network Using EM.Picasso]]

* [[Application Note 4: Modeling Large Parabolic Reflectors Illuminated By Pyramidal Horn Antennas Using EM.Cube]]

* [[Application Note 5: Simulating The Performance Of Installed Antennas On Vehicular Platforms Using EM.Tempo]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:ART AIR title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_1:_Modeling_Radar_Signature_Of_Real-Sized_Aircraft_Using_EM.Tempo]]
| style="width:50px;" | [[image:ART MANH Fig title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_2:_Modeling_Polarimetric_Wave_Propagation_In_The_Lower_Manhattan_Scene_Using_EM.Terrano]]
| style="width:50px;" | [[image:ART PATCH Fig title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_3:_Designing_A_Slot-Coupled_Patch_Antenna_Array_With_A_Corporate_Feed_Network_Using_EM.Picasso]]
| style="width:50px;" | [[image:ART PARAB Fig title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_4:_Modeling_Large_Parabolic_Reflectors_Illuminated_By_Pyramidal_Horn_Antennas_Using_EM.Cube]]
| style="width:50px;" | [[image:ART GOLF Fig title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_5:_Simulating_The_Performance_Of_Installed_Antennas_On_Vehicular_Platforms_Using_EM.Tempo]]
|}
 

<hr>

[[Image:Top_icon.png|30px]] '''[[EM.Cube#EM.Cube Suite Documentation | Back to the Top of the Page]]'''

[[Image:Back_icon.png|30px]] '''[[Main_Page | Back to Emagtech Wiki Gateway]]'''

[[image:RFSpice-ico.png | link=RF.Spice A/D]]   '''[[RF.Spice A/D | Visit RF.Spice A/D Wiki Site]]'''

[[image:NeoScan-ico.png | link=NeoScan]]   '''[[NeoScan | Visit NeoScan Wiki Site]]'''

EM.Cube

2022-03-16T16:11:33Z

Asabet:

[[File:emcubePAGE.png|thumb|450px]]
MODULAR 3D ELECTROMAGNETIC SIMULATION SUITE 
      THAT GROWS WITH YOUR MODELING NEEDS
<table>
<tr>
<td>[[image:Cube-icon.png | link=Getting_Started_with_EM.Cube]] [[image:cad-ico.png | link=Building_Geometrical_Constructions_in_CubeCAD]] [[image:fdtd-ico.png | link=EM.Tempo]] [[image:prop-ico.png | link=EM.Terrano]] [[image:static-ico.png | link=EM.Ferma]] [[image:planar-ico.png | link=EM.Picasso]] [[image:metal-ico.png | link=EM.Libera]] [[image:po-ico.png | link=EM.Illumina]]</td>
<tr>
</table>

'''Welcome to EM.Cube Wiki!'''

== [[image:Cube-icon.png | link=Getting_Started_with_EM.Cube]][[image:cad-ico.png | link=Building_Geometrical_Constructions_in_CubeCAD]] EM.Cube Suite Documentation ==

* [[Getting Started with EM.Cube]]
* [[What%27s_New_in_EM.Cube_R20.1%3F | What's New in EM.Cube 2020?]]
* [[A Review of Maxwell's Equations & Computational Electromagnetics (CEM)]]
* [[Numerical Modeling of Electromagnetic Problems Using EM.Cube]]
* [[Building Geometrical Constructions in CubeCAD]]
* [[Preparing Physical Structures for Electromagnetic Simulation]]
* [[Defining Project Observables & Visualizing Output Data]]
* [[Parametric Modeling & Simulation Modes in EM.Cube]]
* [[Using Python to Create Functions, Models & Scripts]]
* [[Hybrid Modeling in EM.Cube Using Multiple Simulation Engines]]

* [[Glossary of EM.Cube's Basic File, Edit & View Operations]]
* [[Glossary of EM.Cube's Standard Geometric Objects]]
* [[Glossary of EM.Cube's CAD Tools]]
* [[Glossary of EM.Cube's Materials, Sources, Devices & Other Physical Object Types]]



* [[Glossary of EM.Cube's Observables, Data & Graph Types]]
* [[Glossary of EM.Cube's Simulation-Related Operations]]
* [[Glossary of EM.Cube's Wizards]]
* [[Glossary of EM.Cube's Python Functions]]
* [[EM.Cube Application Gallery]]
 

== [[image:fdtd-ico.png]] EM.Tempo Documentation ==

[[EM.Tempo|EM.Tempo Manual]]

[[EM.Tempo]] Tutorial Lessons

* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_1.pdf EMTempo Tutorial Lesson 1: Analyzing A Center-Fed Resonant Dipole Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson1.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_2.pdf EMTempo Tutorial Lesson 2: Analyzing Scattering From A Sphere] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson2.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_3.pdf EMTempo Tutorial Lesson 3: Modeling A Probe-Fed Microstrip Patch Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson3.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_4.pdf EMTempo Tutorial Lesson 4: Modeling A Patch Antenna Array] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson4.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_5.pdf EMTempo Tutorial Lesson 5: Analyzing A Planar Microstrip Band-Stop Filter] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson5.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_6.pdf EMTempo Tutorial Lesson 6: Modeling Rectangular Waveguide Structures] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson6.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_7.pdf EMTempo Tutorial Lesson 7: Designing A Pyramidal Horn Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson7.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_8.pdf EMTempo Tutorial Lesson 8: Analyzing A Periodic Frequency Selective Surface] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson8.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_9.pdf EMTempo Tutorial Lesson 9: Modeling Coplanar Waveguide Structures And Lumped Devices] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson9.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_10.pdf EMTempo Tutorial Lesson 10: Modeling Wave Propagation In Dispersive Media] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson10.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_11.pdf EMTempo Tutorial Lesson 11: Simulating A Monopole Antenna Interacting With A Human Head Model] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson11.zip [Download projects]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Tempo L1 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_1:_Analyzing_A_Center-Fed_Resonant_Dipole_Antenna]]
| style="width:50px;" | [[image:Tempo L2 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_2:_Analyzing_Scattering_From_A_Sphere]]
| style="width:50px;" | [[image:Tempo L3 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_3:_Modeling_A_Probe-Fed_Microstrip_Patch_Antenna]]
| style="width:50px;" | [[image:Tempo L4 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_4:_Modeling_A_Patch_Antenna_Array]]
| style="width:50px;" | [[image:Tempo L5 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_5:_Analyzing_A_Planar_Microstrip_Band-Stop_Filter]]
| style="width:50px;" | [[image:Tempo L6 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_6:_Modeling_Rectangular_Waveguide_Structures]]
| style="width:50px;" | [[image:Tempo L7 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_7:_Designing_A_Pyramidal_Horn_Antenna]]
| style="width:50px;" | [[image:Tempo L8 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_8:_Analyzing_A_Periodic_Frequency_Selective_Surface]]
| style="width:50px;" | [[image:Tempo L9 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_9:_Modeling_Coplanar_Waveguide_Structures_And_Lumped_Devices]]
| style="width:50px;" | [[image:Tempo L10 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_10:_Modeling_Wave_Propagation_In_Dispersive_Media]]
| style="width:50px;" | [[image:Tempo L11 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_11:_Simulating_A_Monopole_Antenna_Interacting_With_A_Human_Head_Model]]
|}
 

== [[image:prop-ico.png]] EM.Terrano Documentation ==

[[EM.Terrano|EM.Terrano Manual]]

[[EM.Terrano]] Tutorial Lessons

* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_1.pdf EM.Terrano Tutorial Lesson 1: Analyzing A Basic Line-Of-Sight Propagation Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson1.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_2.pdf EM.Terrano Tutorial Lesson 2: Examining A Polarimetric Propagation Channel] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson2.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_3.pdf EM.Terrano Tutorial Lesson 3: Analyzing A Multipath Outdoor Propagation Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson3.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_4.pdf EM.Terrano Tutorial Lesson 4: Analyzing Indoor Propagation Inside a Building Model with Penetrable Walls] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson4.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_5.pdf EM.Terrano Tutorial Lesson 5: Simulating A Dense Urban Canyon Propagation Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson5.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_6.pdf EM.Terrano Tutorial Lesson 6: Modeling Irregular Terrain] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson6.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_7.pdf EM.Terrano Tutorial Lesson 7: Parametric Study Of A Realistic Urban Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson7.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_8.pdf EM.Terrano Tutorial Lesson 8: Simulating A Communications Link With Directional Antennas] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson8.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_9.pdf EM.Terrano Tutorial Lesson 9: A SBR Channel Analysis of An Urban Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson9.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_10.pdf EM.Terrano Tutorial Lesson 10: Modeling A Mobile Communications Link] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson10.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_11.pdf EM.Terrano Tutorial Lesson 11: Performing Link Margin Analysis Over the Spherical Earth] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson11.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_12.pdf EM.Terrano Tutorial Lesson 12: Simulating a Communication Link Involving Software-Defined Radios] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson12.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_13.pdf EM.Terrano Tutorial Lesson 13: Simulating Links with Directional Antennas on Rotating Platforms] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson13.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_14.pdf EM.Terrano Tutorial Lesson 14: Atmospheric Propagation Effects & Tropospheric Ducting] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson14.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_15.pdf EM.Terrano Tutorial Lesson 15: Performing Link Margin Analysis on a Realistic Terrain Model] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson15.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_16.pdf EM.Terrano Tutorial Lesson 16: Performing Link Margin Analysis above a Sea Surface Model] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson16.zip [Download projects]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Terrano L1 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_1:_Analyzing_A_Basic_Line-Of-Sight_Propagation_Scene]]
| style="width:50px;" | [[image:Terrano L2N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_2:_Examining_A_Polarimetric_Propagation_Channel]]
| style="width:50px;" | [[image:Terrano L3N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_3:_Analyzing_A_Multipath_Outdoor_Propagation_Scene]]
| style="width:50px;" | [[image:Terrano L4N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_4:_Analyzing_Indoor_Propagation_Inside_A_Multi-Story_Building_Model]]
| style="width:50px;" | [[image:Terrano L5N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_5:_Simulating_A_Dense_Urban_Canyon_Propagation_Scene]]
| style="width:50px;" | [[image:Terrano L6N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_6:_Modeling_Irregular_Terrain]]
| style="width:50px;" | [[image:Terrano L7N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_7:_Parametric_Study_Of_A_Realistic_Urban_Scene]]
| style="width:50px;" | [[image:Terrano L8N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_8:_Simulating_A_Communications_Link_With_Directional_Antennas]]
| style="width:50px;" | [[image:Terrano L9N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_9:_Modeling_A_Mobile_Communications_Link_Using_Python]]
|}
 

== [[image:static-ico.png]] EM.Ferma Documentation ==

[[EM.Ferma|EM.Ferma Manual]]

[[EM.Ferma]] Tutorial Lessons

* [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_1.pdf EM.Ferma Tutorial Lesson 1: Computing The Electric Field & Potential Due To Spherical Charges] [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson1.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_2.pdf EM.Ferma Tutorial Lesson 2: Analyzing A Parallel Plate Capacitor] [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson2.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_3.pdf EM.Ferma Tutorial Lesson 3: Modeling Objects Immersed In A Uniform Electric Field] [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson3.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_4.pdf EM.Ferma Tutorial Lesson 4: Computing The Magnetic Field Of Linear Currents In Free Space & Magnetic Media] [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson4.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_5.pdf EM.Ferma Tutorial Lesson 5: Modeling Solenoids & Toroidal CoilsEM.Ferma Tutorial Lesson 5: Modeling Solenoids & Toroidal Coils] [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson5.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_6.pdf EM.Ferma Tutorial Lesson 6: Analyzing Permanent Magnets] [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson6.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_7.pdf EM.Ferma Tutorial Lesson 7: Analyzing A Microstrip Transmission Line] [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson7.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson_8.pdf EM.Ferma Tutorial Lesson 8: Modeling 2D Coplanar Waveguide Structures] [http://www.emagtech.com/downloads/ProjectRepo/EMFerma_Lesson8.zip [Download projects]]

* [[EM.Ferma Tutorial Lesson 1: Computing The Electric Field & Potential Due To Spherical Charges]]
* [[EM.Ferma Tutorial Lesson 2: Analyzing A Parallel Plate Capacitor]]
* [[EM.Ferma Tutorial Lesson 3: Modeling Objects Immersed In A Uniform Electric Field]]
* [[EM.Ferma Tutorial Lesson 4: Computing The Magnetic Field Of Linear Currents In Free Space & Magnetic Media]]
* [[EM.Ferma Tutorial Lesson 5: Modeling Solenoids & Toroidal Coils]]
* [[EM.Ferma Tutorial Lesson 6: Analyzing Permanent Magnets]]
* [[EM.Ferma Tutorial Lesson 7: Analyzing A Microstrip Transmission Line]]
* [[EM.Ferma Tutorial Lesson 8: Modeling 2D Coplanar Waveguide Structures]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Ferma L1 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_1:_Computing_The_Electric_Field_%26_Potential_Due_To_Spherical_Charges]]
| style="width:50px;" | [[image:Ferma L2 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_2:_Analyzing_A_Parallel_Plate_Capacitor]]
| style="width:50px;" | [[image:Ferma L3 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_3:_Modeling_Objects_Immersed_In_A_Uniform_Electric_Field]]
| style="width:50px;" | [[image:Ferma L4 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_4:_Computing_The_Magnetic_Field_Of_Linear_Currents_In_Free_Space_%26_Magnetic_Media]]
| style="width:50px;" | [[image:Ferma L5 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_5:_Modeling_Solenoids_%26_Toroidal_Coils]]
| style="width:50px;" | [[image:Ferma L6 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_6:_Analyzing_Permanent_Magnets]]
| style="width:50px;" | [[image:Ferma L7 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_7:_Analyzing_A_Microstrip_Transmission_Line]]
| style="width:50px;" | [[image:Ferma L8 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_8:_Modeling_2D_Coplanar_Waveguide_Structures]]
|}
 

== [[image:planar-ico.png]] EM.Picasso Documentation ==

[[EM.Picasso|EM.Picasso Manual]]

[[EM.Picasso]] Tutorial Lessons

* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_1.pdf EM.Picasso Tutorial Lesson 1: Analyzing A Microstrip-Fed Patch Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson1.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_2.pdf EM.Picasso Tutorial Lesson 2: Designing A Patch Antenna With A Recessed Feed] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson2.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_3.pdf EM.Picasso Tutorial Lesson 3: Analyzing A Planar Microstrip Band-Stop Filter] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson3.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_4.pdf EM.Picasso Tutorial Lesson 4: Designing A Circularly Polarized Probe-Fed Patch Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson4.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_5.pdf EM.Picasso Tutorial Lesson 5: Analyzing Patch Antenna Arrays] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson5.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_6.pdf EM.Picasso Tutorial Lesson 6: Analyzing A Periodic Frequency Selective Surface] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson6.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_7.pdf EM.Picasso Tutorial Lesson 7: Designing A Slot-Coupled Patch Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson7.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_8.pdf EM.Picasso Tutorial Lesson 8: Analyzing A CPW-Fed Folded Dipole Slot Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson8.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_9.pdf EM.Picasso Tutorial Lesson 9: Designing a Microstrip Wilkinson Power Divider] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson9.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson_10.pdf EM.Picasso Tutorial Lesson 10: Optimizing A Microstrip Patch Antenna Design] [http://www.emagtech.com/downloads/ProjectRepo/EMPicasso_Lesson10.zip [Download projects]]

* [[EM.Picasso Tutorial Lesson 1: Analyzing A Microstrip-Fed Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 2: Designing A Patch Antenna With A Recessed Feed]]
* [[EM.Picasso Tutorial Lesson 3: Analyzing A Planar Microstrip Band-Stop Filter]]
* [[EM.Picasso Tutorial Lesson 4: Designing A Circularly Polarized Probe-Fed Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 5: Analyzing Patch Antenna Arrays]]
* [[EM.Picasso Tutorial Lesson 6: Analyzing A Periodic Frequency Selective Surface]]
* [[EM.Picasso Tutorial Lesson 7: Designing A Slot-Coupled Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 8: Analyzing A CPW-Fed Folded Dipole Slot Antenna]]
* [[EM.Picasso Tutorial Lesson 9: Designing a Microstrip Wilkinson Power Divider]]
* [[EM.Picasso Tutorial Lesson 10: Optimizing A Microstrip Patch Antenna Design]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Picasso L1 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_1:_Analyzing_A_Microstrip-Fed_Patch_Antenna]]
| style="width:50px;" | [[image:Picasso L2 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_2:_Designing_A_Patch_Antenna_With_A_Recessed_Feed]]
| style="width:50px;" | [[image:Picasso L3 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_3:_Analyzing_A_Planar_Microstrip_Band-Stop_Filter]]
| style="width:50px;" | [[image:Picasso L4 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_4:_Designing_A_Circularly_Polarized_Probe-Fed_Patch_Antenna]]
| style="width:50px;" | [[image:Picasso L5 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_5:_Analyzing_Patch_Antenna_Arrays]]
| style="width:50px;" | [[image:Picasso L6 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_6:_Analyzing_A_Periodic_Frequency_Selective_Surface]]
| style="width:50px;" | [[image:Picasso L7 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_7:_Designing_A_Slot-Coupled_Patch_Antenna]]
| style="width:50px;" | [[image:Picasso L8 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_8:_Analyzing_A_CPW-Fed_Folded_Dipole_Slot_Antenna]]
| style="width:50px;" | [[image:Picasso L9 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_9:_Designing_a_Microstrip_Wilkinson_Power_Divider]]
| style="width:50px;" | [[image:Picasso L10 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_10:_Optimizing_A_Microstrip_Patch_Antenna_Design]]
|}
 

== [[image:metal-ico.png]] EM.Libera Documentation ==

[[EM.Libera|EM.Libera Manual]]

[[EM.Libera]] Tutorial Lessons

* [http://www.emagtech.com/downloads/ProjectRepo/EMLibera_Lesson_1.pdf EM.Libera Tutorial Lesson 1: Analyzing A Center-Fed Wire Dipole Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMLibera_Lesson1.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMLibera_Lesson_2.pdf EM.Libera Tutorial Lesson 2: Designing A Yagi-Uda Dipole Array] [http://www.emagtech.com/downloads/ProjectRepo/EMLibera_Lesson2.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMLibera_Lesson_3.pdf EM.Libera Tutorial Lesson 3: Computing The Radar Cross Section Of Metallic, Dielectric & Composite Targets] [http://www.emagtech.com/downloads/ProjectRepo/EMLibera_Lesson3.zip [Download projects]]

* [[EM.Libera Tutorial Lesson 1: Analyzing A Center-Fed Wire Dipole Antenna]]
* [[EM.Libera Tutorial Lesson 2: Designing A Yagi-Uda Dipole Array]]
* [[EM.Libera Tutorial Lesson 3: Computing The Radar Cross Section Of Metallic, Dielectric & Composite Targets]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Libera L1 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Libera_Tutorial_Lesson_1:_Analyzing_A_Center-Fed_Wire_Dipole_Antenna]]
| style="width:50px;" | [[image:Libera L2 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Libera_Tutorial_Lesson_2:_Designing_A_Yagi-Uda_Dipole_Array]]
| style="width:50px;" | [[image:Libera L3 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Libera_Tutorial_Lesson_3:_Computing_The_Radar_Cross_Section_Of_Metallic,_Dielectric_%26_Composite_Targets]]
|}
 

== [[image:po-ico.png]] EM.Illumina Documentation ==

[[EM.Illumina|EM.Illumina Manual]]

[[EM.Illumina]] Tutorial Lessons

* [http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson_1.pdf EM.Illumina Tutorial Lesson 1: Analyzing The Scattering From Metal Targets] [http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson1.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson_2.pdf EM.Illumina Tutorial Lesson 2: Computing The Radar Cross Section Of Corner Reflectors] [http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson2.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson_3.pdf EM.Illumina Tutorial Lesson 3: Computing The Radiation Pattern Of Parabolic Dish Reflectors] [http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson3.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson_4.pdf EM.Illumina Tutorial Lesson 4: Simulating Radiation In The Presence Of Large Metallic Shipboard Platforms] [http://www.emagtech.com/downloads/ProjectRepo/EMIllumina_Lesson4.zip [Download projects]]

* [[EM.Illumina Tutorial Lesson 1: Analyzing The Scattering From Metal Targets]]
* [[EM.Illumina Tutorial Lesson 2: Computing The Radar Cross Section Of Corner Reflectors]]
* [[EM.Illumina Tutorial Lesson 3: Computing The Radiation Pattern Of Parabolic Dish Reflectors]]
* [[EM.Illumina Tutorial Lesson 4: Simulating Radiation In The Presence Of Large Metallic Shipboard Platforms]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Illumina L1 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Illumina_Tutorial_Lesson_1:_Analyzing_The_Scattering_From_Metal_Targets]]
| style="width:50px;" | [[image:Illumina L2 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Illumina_Tutorial_Lesson_2:_Computing_The_Radar_Cross_Section_Of_Corner_Reflectors]]
| style="width:50px;" | [[image:Illumina L3 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Illumina_Tutorial_Lesson_3:_Computing_The_Radiation_Pattern_Of_Parabolic_Dish_Reflectors]]
| style="width:50px;" | [[image:Illumina L4 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Illumina_Tutorial_Lesson_4:_Simulating_Radiation_In_The_Presence_Of_Large_Metallic_Shipboard_Platforms]]
|}

 

== [[image:Cube-icon.png | link=Getting_Started_with_EM.Cube]] EM.Cube Articles & Notes ==

Verification & Validation Articles

* [[V&V Article 1: Modeling Complex Frequency Selective Surfaces Using EM.Cube]]

* [[V&V Article 2: Computing Radar Cross Section Of Metallic Targets Using EM.Cube]]

* [[V&V Article 3: Modeling Broadband And Circularly Polarized Patch Antennas Using EM.Picasso]]

* [[V&V Article 4: Designing Wideband Dielectric Resonator Antennas Using EM.Tempo]]

* [[V&V Article 5: Modeling Dispersive Materials Using EM.Tempo]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:ART FSS title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_1:_Modeling_Complex_Frequency_Selective_Surfaces_Using_EM.Cube]]
| style="width:50px;" | [[image:ART RCS title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_2:_Computing_Radar_Cross_Section_Of_Metallic_Targets_Using_EM.Cube]]
| style="width:50px;" | [[image:ART UWB title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_3:_Modeling_Broadband_And_Circularly_Polarized_Patch_Antennas_Using_EM.Picasso]]
| style="width:50px;" | [[image:ART DRA title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_4:_Designing_Wideband_Dielectric_Resonator_Antennas_Using_EM.Tempo]]
| style="width:50px;" | [[image:ART DISP title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_5:_Modeling_Dispersive_Materials_Using_EM.Tempo]]
|}

Application Notes

* [[Application Note 1: Modeling Radar Signature Of Real-Sized Aircraft Using EM.Tempo]]

* [[Application Note 2: Modeling Polarimetric Wave Propagation In The Lower Manhattan Scene Using EM.Terrano]]

* [[Application Note 3: Designing A Slot-Coupled Patch Antenna Array With A Corporate Feed Network Using EM.Picasso]]

* [[Application Note 4: Modeling Large Parabolic Reflectors Illuminated By Pyramidal Horn Antennas Using EM.Cube]]

* [[Application Note 5: Simulating The Performance Of Installed Antennas On Vehicular Platforms Using EM.Tempo]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:ART AIR title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_1:_Modeling_Radar_Signature_Of_Real-Sized_Aircraft_Using_EM.Tempo]]
| style="width:50px;" | [[image:ART MANH Fig title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_2:_Modeling_Polarimetric_Wave_Propagation_In_The_Lower_Manhattan_Scene_Using_EM.Terrano]]
| style="width:50px;" | [[image:ART PATCH Fig title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_3:_Designing_A_Slot-Coupled_Patch_Antenna_Array_With_A_Corporate_Feed_Network_Using_EM.Picasso]]
| style="width:50px;" | [[image:ART PARAB Fig title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_4:_Modeling_Large_Parabolic_Reflectors_Illuminated_By_Pyramidal_Horn_Antennas_Using_EM.Cube]]
| style="width:50px;" | [[image:ART GOLF Fig title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_5:_Simulating_The_Performance_Of_Installed_Antennas_On_Vehicular_Platforms_Using_EM.Tempo]]
|}
 

<hr>

[[Image:Top_icon.png|30px]] '''[[EM.Cube#EM.Cube Suite Documentation | Back to the Top of the Page]]'''

[[Image:Back_icon.png|30px]] '''[[Main_Page | Back to Emagtech Wiki Gateway]]'''

[[image:RFSpice-ico.png | link=RF.Spice A/D]]   '''[[RF.Spice A/D | Visit RF.Spice A/D Wiki Site]]'''

[[image:NeoScan-ico.png | link=NeoScan]]   '''[[NeoScan | Visit NeoScan Wiki Site]]'''

New Tutorials

2022-03-08T14:56:48Z

Asabet:

== EM.Cube Tutorials ==

Each tutorial lesson listed below walks you through the basic features of one of [[EM.Cube]]'s computational modules:

----------------------------------------------------------------------------------------

Old [[EM.Tempo]] Tutorial Lessons

* [[EM.Tempo Tutorial Lesson 1: Analyzing A Center-Fed Resonant Dipole Antenna]]
* [[EM.Tempo Tutorial Lesson 2: Analyzing Scattering From A Sphere]]
* [[EM.Tempo Tutorial Lesson 3: Modeling A Probe-Fed Microstrip Patch Antenna]]
* [[EM.Tempo Tutorial Lesson 4: Modeling A Patch Antenna Array]]
* [[EM.Tempo Tutorial Lesson 5: Analyzing A Planar Microstrip Band-Stop Filter]]
* [[EM.Tempo Tutorial Lesson 6: Modeling Rectangular Waveguide Structures]]
* [[EM.Tempo Tutorial Lesson 7: Designing A Pyramidal Horn Antenna]]
* [[EM.Tempo Tutorial Lesson 8: Analyzing A Periodic Frequency Selective Surface]]
* [[EM.Tempo Tutorial Lesson 9: Modeling Coplanar Waveguide Structures And Lumped Devices]]
* [[EM.Tempo Tutorial Lesson 10: Modeling Wave Propagation In Dispersive Media]]
* [[EM.Tempo Tutorial Lesson 11: Simulating A Monopole Antenna Interacting With A Human Head Model]]

Old [[EM.Terrano]] Tutorial Lessons

* [[EM.Terrano Tutorial Lesson 1: Analyzing A Basic Line-Of-Sight Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 2: Examining A Polarimetric Propagation Channel]]
* [[EM.Terrano Tutorial Lesson 3: Analyzing A Multipath Outdoor Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 4: Analyzing Indoor Propagation Inside a Building Model with Penetrable Walls]]
* [[EM.Terrano Tutorial Lesson 5: Simulating A Dense Urban Canyon Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 6: Modeling Irregular Terrain]]
* [[EM.Terrano Tutorial Lesson 7: Parametric Study Of A Realistic Urban Scene]]
* [[EM.Terrano Tutorial Lesson 8: Simulating A Communications Link With Directional Antennas]]
* [[EM.Terrano Tutorial Lesson 9: A SBR Channel Analysis of An Urban Scene]]
* [[EM.Terrano Tutorial Lesson 10: Modeling A Mobile Communications Link]]

Old [[EM.Ferma]] Tutorial Lessons

* [[EM.Ferma Tutorial Lesson 1: Computing The Electric Field & Potential Due To Spherical Charges]]
* [[EM.Ferma Tutorial Lesson 2: Analyzing A Parallel Plate Capacitor]]
* [[EM.Ferma Tutorial Lesson 3: Modeling Objects Immersed In A Uniform Electric Field]]
* [[EM.Ferma Tutorial Lesson 4: Computing The Magnetic Field Of Linear Currents In Free Space & Magnetic Media]]
* [[EM.Ferma Tutorial Lesson 5: Modeling Solenoids & Toroidal Coils]]
* [[EM.Ferma Tutorial Lesson 6: Analyzing Permanent Magnets]]
* [[EM.Ferma Tutorial Lesson 7: Analyzing A Microstrip Transmission Line]]
* [[EM.Ferma Tutorial Lesson 8: Modeling 2D Coplanar Waveguide Structures]]

Old [[EM.Picasso]] Tutorial Lessons

* [[EM.Picasso Tutorial Lesson 1: Analyzing A Microstrip-Fed Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 2: Designing A Patch Antenna With A Recessed Feed]]
* [[EM.Picasso Tutorial Lesson 3: Analyzing A Planar Microstrip Band-Stop Filter]]
* [[EM.Picasso Tutorial Lesson 4: Designing A Circularly Polarized Probe-Fed Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 5: Analyzing Patch Antenna Arrays]]
* [[EM.Picasso Tutorial Lesson 6: Analyzing A Periodic Frequency Selective Surface]]
* [[EM.Picasso Tutorial Lesson 7: Designing A Slot-Coupled Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 8: Analyzing A CPW-Fed Folded Dipole Slot Antenna]]
* [[EM.Picasso Tutorial Lesson 9: Designing a Microstrip Wilkinson Power Divider]]
* [[EM.Picasso Tutorial Lesson 10: Optimizing A Microstrip Patch Antenna Design]]

Old [[EM.Libera]] Tutorial Lessons

* [[EM.Libera Tutorial Lesson 1: Analyzing A Center-Fed Wire Dipole Antenna]]
* [[EM.Libera Tutorial Lesson 2: Designing A Yagi-Uda Dipole Array]]
* [[EM.Libera Tutorial Lesson 3: Computing The Radar Cross Section Of Metallic, Dielectric & Composite Targets]]

Old [[EM.Illumina]] Tutorial Lessons

* [[EM.Illumina Tutorial Lesson 1: Analyzing The Scattering From Metal Targets]]
* [[EM.Illumina Tutorial Lesson 2: Computing The Radar Cross Section Of Corner Reflectors]]
* [[EM.Illumina Tutorial Lesson 3: Computing The Radiation Pattern Of Parabolic Dish Reflectors]]
* [[EM.Illumina Tutorial Lesson 4: Simulating Radiation In The Presence Of Large Metallic Shipboard Platforms]]

These are the new pages added or modified for [[EM.Cube]] Release R17:

[[New PO Theory]]

[[What's New in EM.Cube R19.1]]

[[OLD What's New in EM.Cube R18.1?]]

[[What's New in EM.Cube R20.1?]]

[[Glossary of EM.Cube's Materials & Other Physical Object Types]]

[[Glossary of EM.Cube's Sources & Devices]]

[[EM.Terrano Tutorial Lesson 4: Analyzing Indoor Propagation Inside a Building Model with Penetrable Walls]]

[[EM.Terrano Tutorial Lesson 9: A SBR Channel Analysis of An Urban Scene]]

[[EM.Terrano Tutorial Lesson 10: Modeling A Mobile Communications Link]]

----------------------------------------------------------------------------------------

These are the old [[EM.Cube]] documentation pages:

[[The Old EM.Cube Wiki Start Page]]

[[THE OLD Getting Started with EM.Cube]]

[[THE OLD What's New in EM.Cube 2016?]]

[[THE OLD Defining Simulation Observables & Visualizing Output Data]]

---------------------------------

[[V&V Article 6: Using EM.Cube And NeoScan System Together For Antenna Design]]

[[Installing EM.Cube]]

[[EM.Cube FAQ]]

----------------------------------------------------------------------------------------

These are all old stuff:

[[NeoScan_Complete]]

[[NeoScan Manuals]]

[[NeoScan Manual Part A: Getting Started]]

<table>
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! [[EM.Cube]]
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|[[File:emcubePAGE.png |225px | link=EM.Cube]]
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|}
</td>
<td>   </td>
<td>
{|class="wikitable"
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! [[RF.Spice A/D | RF.Spice A/D]]
|-
| [[File:RfspicePAGE New.png |277px | link=RF.Spice A/D | RF.Spice A/D]]
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|}
</td>
<td>   </td>
<td>
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! [[RF.Spice A/D | B2.Spice A/D]]
|-
| [[File:B2spicePAGE.png |226px | link=RF.Spice A/D | B2.Spice A/D]]
|-
|}
</td>
<td>   </td>
<td>
{|class="wikitable"
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! [[NeoScan | NeoScan]]
|-
| [[File:NeoScan_Product.png |245px | link=NeoScan | NeoScan ]]
|-
|}
</td>
</tr>
</table>

----

[[Old Gateway]]

[[Old EM.Cube Page]]

[[Old Digital Glossary]]

----

[[Image:Back_icon.png|40px]] '''[[Main_Page | Back to Emagtech Wiki Gateway]]'''

EM.Cube

2022-03-01T05:32:41Z

Asabet:

[[File:emcubePAGE.png|thumb|450px]]
MODULAR 3D ELECTROMAGNETIC SIMULATION SUITE 
      THAT GROWS WITH YOUR MODELING NEEDS
<table>
<tr>
<td>[[image:Cube-icon.png | link=Getting_Started_with_EM.Cube]] [[image:cad-ico.png | link=Building_Geometrical_Constructions_in_CubeCAD]] [[image:fdtd-ico.png | link=EM.Tempo]] [[image:prop-ico.png | link=EM.Terrano]] [[image:static-ico.png | link=EM.Ferma]] [[image:planar-ico.png | link=EM.Picasso]] [[image:metal-ico.png | link=EM.Libera]] [[image:po-ico.png | link=EM.Illumina]]</td>
<tr>
</table>

'''Welcome to EM.Cube Wiki!'''

== [[image:Cube-icon.png | link=Getting_Started_with_EM.Cube]][[image:cad-ico.png | link=Building_Geometrical_Constructions_in_CubeCAD]] EM.Cube Suite Documentation ==

* [[Getting Started with EM.Cube]]
* [[What%27s_New_in_EM.Cube_R20.1%3F | What's New in EM.Cube 2020?]]
* [[A Review of Maxwell's Equations & Computational Electromagnetics (CEM)]]
* [[Numerical Modeling of Electromagnetic Problems Using EM.Cube]]
* [[Building Geometrical Constructions in CubeCAD]]
* [[Preparing Physical Structures for Electromagnetic Simulation]]
* [[Defining Project Observables & Visualizing Output Data]]
* [[Parametric Modeling & Simulation Modes in EM.Cube]]
* [[Using Python to Create Functions, Models & Scripts]]
* [[Hybrid Modeling in EM.Cube Using Multiple Simulation Engines]]

* [[Glossary of EM.Cube's Basic File, Edit & View Operations]]
* [[Glossary of EM.Cube's Standard Geometric Objects]]
* [[Glossary of EM.Cube's CAD Tools]]
* [[Glossary of EM.Cube's Materials, Sources, Devices & Other Physical Object Types]]



* [[Glossary of EM.Cube's Observables, Data & Graph Types]]
* [[Glossary of EM.Cube's Simulation-Related Operations]]
* [[Glossary of EM.Cube's Wizards]]
* [[Glossary of EM.Cube's Python Functions]]
* [[EM.Cube Application Gallery]]
 

== [[image:fdtd-ico.png]] EM.Tempo Documentation ==

[[EM.Tempo|EM.Tempo Manual]]

[[EM.Tempo]] Tutorial Lessons

* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_1.pdf EMTempo Tutorial Lesson 1: Analyzing A Center-Fed Resonant Dipole Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson1.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_2.pdf EMTempo Tutorial Lesson 2: Analyzing Scattering From A Sphere] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson2.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_3.pdf EMTempo Tutorial Lesson 3: Modeling A Probe-Fed Microstrip Patch Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson3.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_4.pdf EMTempo Tutorial Lesson 4: Modeling A Patch Antenna Array] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson4.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_5.pdf EMTempo Tutorial Lesson 5: Analyzing A Planar Microstrip Band-Stop Filter] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson5.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_6.pdf EMTempo Tutorial Lesson 6: Modeling Rectangular Waveguide Structures] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson6.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_7.pdf EMTempo Tutorial Lesson 7: Designing A Pyramidal Horn Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson7.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_8.pdf EMTempo Tutorial Lesson 8: Analyzing A Periodic Frequency Selective Surface] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson8.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_9.pdf EMTempo Tutorial Lesson 9: Modeling Coplanar Waveguide Structures And Lumped Devices] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson9.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_10.pdf EMTempo Tutorial Lesson 10: Modeling Wave Propagation In Dispersive Media] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson10.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_11.pdf EMTempo Tutorial Lesson 11: Simulating A Monopole Antenna Interacting With A Human Head Model] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson11.zip [Download projects]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Tempo L1 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_1:_Analyzing_A_Center-Fed_Resonant_Dipole_Antenna]]
| style="width:50px;" | [[image:Tempo L2 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_2:_Analyzing_Scattering_From_A_Sphere]]
| style="width:50px;" | [[image:Tempo L3 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_3:_Modeling_A_Probe-Fed_Microstrip_Patch_Antenna]]
| style="width:50px;" | [[image:Tempo L4 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_4:_Modeling_A_Patch_Antenna_Array]]
| style="width:50px;" | [[image:Tempo L5 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_5:_Analyzing_A_Planar_Microstrip_Band-Stop_Filter]]
| style="width:50px;" | [[image:Tempo L6 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_6:_Modeling_Rectangular_Waveguide_Structures]]
| style="width:50px;" | [[image:Tempo L7 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_7:_Designing_A_Pyramidal_Horn_Antenna]]
| style="width:50px;" | [[image:Tempo L8 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_8:_Analyzing_A_Periodic_Frequency_Selective_Surface]]
| style="width:50px;" | [[image:Tempo L9 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_9:_Modeling_Coplanar_Waveguide_Structures_And_Lumped_Devices]]
| style="width:50px;" | [[image:Tempo L10 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_10:_Modeling_Wave_Propagation_In_Dispersive_Media]]
| style="width:50px;" | [[image:Tempo L11 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_11:_Simulating_A_Monopole_Antenna_Interacting_With_A_Human_Head_Model]]
|}
 

== [[image:prop-ico.png]] EM.Terrano Documentation ==

[[EM.Terrano|EM.Terrano Manual]]

[[EM.Terrano]] Tutorial Lessons

* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_1.pdf EM.Terrano Tutorial Lesson 1: Analyzing A Basic Line-Of-Sight Propagation Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson1.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_2.pdf EM.Terrano Tutorial Lesson 2: Examining A Polarimetric Propagation Channel] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson2.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_3.pdf EM.Terrano Tutorial Lesson 3: Analyzing A Multipath Outdoor Propagation Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson3.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_4.pdf EM.Terrano Tutorial Lesson 4: Analyzing Indoor Propagation Inside a Building Model with Penetrable Walls] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson4.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_5.pdf EM.Terrano Tutorial Lesson 5: Simulating A Dense Urban Canyon Propagation Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson5.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_6.pdf EM.Terrano Tutorial Lesson 6: Modeling Irregular Terrain] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson6.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_7.pdf EM.Terrano Tutorial Lesson 7: Parametric Study Of A Realistic Urban Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson7.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_8.pdf EM.Terrano Tutorial Lesson 8: Simulating A Communications Link With Directional Antennas] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson8.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_9.pdf EM.Terrano Tutorial Lesson 9: A SBR Channel Analysis of An Urban Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson9.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_10.pdf EM.Terrano Tutorial Lesson 10: Modeling A Mobile Communications Link] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson10.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_11.pdf EM.Terrano Tutorial Lesson 11: Performing Link Margin Analysis Over the Spherical Earth] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson11.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_12.pdf EM.Terrano Tutorial Lesson 12: Simulating a Communication Link Involving Software-Defined Radios] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson12.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_13.pdf EM.Terrano Tutorial Lesson 13: Simulating Links with Directional Antennas on Rotating Platforms] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson13.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_14.pdf EM.Terrano Tutorial Lesson 14: Atmospheric Propagation Effects & Tropospheric Ducting] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson14.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_15.pdf EM.Terrano Tutorial Lesson 15: Performing Link Margin Analysis on a Realistic Terrain Model] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson15.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_16.pdf EM.Terrano Tutorial Lesson 16: Performing Link Margin Analysis above a Sea Surface Model] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson16.zip [Download projects]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Terrano L1 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_1:_Analyzing_A_Basic_Line-Of-Sight_Propagation_Scene]]
| style="width:50px;" | [[image:Terrano L2N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_2:_Examining_A_Polarimetric_Propagation_Channel]]
| style="width:50px;" | [[image:Terrano L3N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_3:_Analyzing_A_Multipath_Outdoor_Propagation_Scene]]
| style="width:50px;" | [[image:Terrano L4N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_4:_Analyzing_Indoor_Propagation_Inside_A_Multi-Story_Building_Model]]
| style="width:50px;" | [[image:Terrano L5N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_5:_Simulating_A_Dense_Urban_Canyon_Propagation_Scene]]
| style="width:50px;" | [[image:Terrano L6N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_6:_Modeling_Irregular_Terrain]]
| style="width:50px;" | [[image:Terrano L7N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_7:_Parametric_Study_Of_A_Realistic_Urban_Scene]]
| style="width:50px;" | [[image:Terrano L8N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_8:_Simulating_A_Communications_Link_With_Directional_Antennas]]
| style="width:50px;" | [[image:Terrano L9N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_9:_Modeling_A_Mobile_Communications_Link_Using_Python]]
|}
 

== [[image:static-ico.png]] EM.Ferma Documentation ==

[[EM.Ferma|EM.Ferma Manual]]

[[EM.Ferma]] Tutorial Lessons

* [[EM.Ferma Tutorial Lesson 1: Computing The Electric Field & Potential Due To Spherical Charges]]
* [[EM.Ferma Tutorial Lesson 2: Analyzing A Parallel Plate Capacitor]]
* [[EM.Ferma Tutorial Lesson 3: Modeling Objects Immersed In A Uniform Electric Field]]
* [[EM.Ferma Tutorial Lesson 4: Computing The Magnetic Field Of Linear Currents In Free Space & Magnetic Media]]
* [[EM.Ferma Tutorial Lesson 5: Modeling Solenoids & Toroidal Coils]]
* [[EM.Ferma Tutorial Lesson 6: Analyzing Permanent Magnets]]
* [[EM.Ferma Tutorial Lesson 7: Analyzing A Microstrip Transmission Line]]
* [[EM.Ferma Tutorial Lesson 8: Modeling 2D Coplanar Waveguide Structures]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Ferma L1 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_1:_Computing_The_Electric_Field_%26_Potential_Due_To_Spherical_Charges]]
| style="width:50px;" | [[image:Ferma L2 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_2:_Analyzing_A_Parallel_Plate_Capacitor]]
| style="width:50px;" | [[image:Ferma L3 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_3:_Modeling_Objects_Immersed_In_A_Uniform_Electric_Field]]
| style="width:50px;" | [[image:Ferma L4 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_4:_Computing_The_Magnetic_Field_Of_Linear_Currents_In_Free_Space_%26_Magnetic_Media]]
| style="width:50px;" | [[image:Ferma L5 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_5:_Modeling_Solenoids_%26_Toroidal_Coils]]
| style="width:50px;" | [[image:Ferma L6 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_6:_Analyzing_Permanent_Magnets]]
| style="width:50px;" | [[image:Ferma L7 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_7:_Analyzing_A_Microstrip_Transmission_Line]]
| style="width:50px;" | [[image:Ferma L8 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_8:_Modeling_2D_Coplanar_Waveguide_Structures]]
|}
 

== [[image:planar-ico.png]] EM.Picasso Documentation ==

[[EM.Picasso|EM.Picasso Manual]]

[[EM.Picasso]] Tutorial Lessons

* [[EM.Picasso Tutorial Lesson 1: Analyzing A Microstrip-Fed Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 2: Designing A Patch Antenna With A Recessed Feed]]
* [[EM.Picasso Tutorial Lesson 3: Analyzing A Planar Microstrip Band-Stop Filter]]
* [[EM.Picasso Tutorial Lesson 4: Designing A Circularly Polarized Probe-Fed Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 5: Analyzing Patch Antenna Arrays]]
* [[EM.Picasso Tutorial Lesson 6: Analyzing A Periodic Frequency Selective Surface]]
* [[EM.Picasso Tutorial Lesson 7: Designing A Slot-Coupled Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 8: Analyzing A CPW-Fed Folded Dipole Slot Antenna]]
* [[EM.Picasso Tutorial Lesson 9: Designing a Microstrip Wilkinson Power Divider]]
* [[EM.Picasso Tutorial Lesson 10: Optimizing A Microstrip Patch Antenna Design]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Picasso L1 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_1:_Analyzing_A_Microstrip-Fed_Patch_Antenna]]
| style="width:50px;" | [[image:Picasso L2 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_2:_Designing_A_Patch_Antenna_With_A_Recessed_Feed]]
| style="width:50px;" | [[image:Picasso L3 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_3:_Analyzing_A_Planar_Microstrip_Band-Stop_Filter]]
| style="width:50px;" | [[image:Picasso L4 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_4:_Designing_A_Circularly_Polarized_Probe-Fed_Patch_Antenna]]
| style="width:50px;" | [[image:Picasso L5 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_5:_Analyzing_Patch_Antenna_Arrays]]
| style="width:50px;" | [[image:Picasso L6 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_6:_Analyzing_A_Periodic_Frequency_Selective_Surface]]
| style="width:50px;" | [[image:Picasso L7 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_7:_Designing_A_Slot-Coupled_Patch_Antenna]]
| style="width:50px;" | [[image:Picasso L8 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_8:_Analyzing_A_CPW-Fed_Folded_Dipole_Slot_Antenna]]
| style="width:50px;" | [[image:Picasso L9 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_9:_Designing_a_Microstrip_Wilkinson_Power_Divider]]
| style="width:50px;" | [[image:Picasso L10 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_10:_Optimizing_A_Microstrip_Patch_Antenna_Design]]
|}
 

== [[image:metal-ico.png]] EM.Libera Documentation ==

[[EM.Libera|EM.Libera Manual]]

[[EM.Libera]] Tutorial Lessons

* [[EM.Libera Tutorial Lesson 1: Analyzing A Center-Fed Wire Dipole Antenna]]
* [[EM.Libera Tutorial Lesson 2: Designing A Yagi-Uda Dipole Array]]
* [[EM.Libera Tutorial Lesson 3: Computing The Radar Cross Section Of Metallic, Dielectric & Composite Targets]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Libera L1 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Libera_Tutorial_Lesson_1:_Analyzing_A_Center-Fed_Wire_Dipole_Antenna]]
| style="width:50px;" | [[image:Libera L2 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Libera_Tutorial_Lesson_2:_Designing_A_Yagi-Uda_Dipole_Array]]
| style="width:50px;" | [[image:Libera L3 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Libera_Tutorial_Lesson_3:_Computing_The_Radar_Cross_Section_Of_Metallic,_Dielectric_%26_Composite_Targets]]
|}
 

== [[image:po-ico.png]] EM.Illumina Documentation ==

[[EM.Illumina|EM.Illumina Manual]]

[[EM.Illumina]] Tutorial Lessons

* [[EM.Illumina Tutorial Lesson 1: Analyzing The Scattering From Metal Targets]]
* [[EM.Illumina Tutorial Lesson 2: Computing The Radar Cross Section Of Corner Reflectors]]
* [[EM.Illumina Tutorial Lesson 3: Computing The Radiation Pattern Of Parabolic Dish Reflectors]]
* [[EM.Illumina Tutorial Lesson 4: Simulating Radiation In The Presence Of Large Metallic Shipboard Platforms]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Illumina L1 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Illumina_Tutorial_Lesson_1:_Analyzing_The_Scattering_From_Metal_Targets]]
| style="width:50px;" | [[image:Illumina L2 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Illumina_Tutorial_Lesson_2:_Computing_The_Radar_Cross_Section_Of_Corner_Reflectors]]
| style="width:50px;" | [[image:Illumina L3 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Illumina_Tutorial_Lesson_3:_Computing_The_Radiation_Pattern_Of_Parabolic_Dish_Reflectors]]
| style="width:50px;" | [[image:Illumina L4 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Illumina_Tutorial_Lesson_4:_Simulating_Radiation_In_The_Presence_Of_Large_Metallic_Shipboard_Platforms]]
|}

 

== [[image:Cube-icon.png | link=Getting_Started_with_EM.Cube]] EM.Cube Articles & Notes ==

Verification & Validation Articles

* [[V&V Article 1: Modeling Complex Frequency Selective Surfaces Using EM.Cube]]

* [[V&V Article 2: Computing Radar Cross Section Of Metallic Targets Using EM.Cube]]

* [[V&V Article 3: Modeling Broadband And Circularly Polarized Patch Antennas Using EM.Picasso]]

* [[V&V Article 4: Designing Wideband Dielectric Resonator Antennas Using EM.Tempo]]

* [[V&V Article 5: Modeling Dispersive Materials Using EM.Tempo]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:ART FSS title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_1:_Modeling_Complex_Frequency_Selective_Surfaces_Using_EM.Cube]]
| style="width:50px;" | [[image:ART RCS title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_2:_Computing_Radar_Cross_Section_Of_Metallic_Targets_Using_EM.Cube]]
| style="width:50px;" | [[image:ART UWB title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_3:_Modeling_Broadband_And_Circularly_Polarized_Patch_Antennas_Using_EM.Picasso]]
| style="width:50px;" | [[image:ART DRA title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_4:_Designing_Wideband_Dielectric_Resonator_Antennas_Using_EM.Tempo]]
| style="width:50px;" | [[image:ART DISP title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_5:_Modeling_Dispersive_Materials_Using_EM.Tempo]]
|}

Application Notes

* [[Application Note 1: Modeling Radar Signature Of Real-Sized Aircraft Using EM.Tempo]]

* [[Application Note 2: Modeling Polarimetric Wave Propagation In The Lower Manhattan Scene Using EM.Terrano]]

* [[Application Note 3: Designing A Slot-Coupled Patch Antenna Array With A Corporate Feed Network Using EM.Picasso]]

* [[Application Note 4: Modeling Large Parabolic Reflectors Illuminated By Pyramidal Horn Antennas Using EM.Cube]]

* [[Application Note 5: Simulating The Performance Of Installed Antennas On Vehicular Platforms Using EM.Tempo]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:ART AIR title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_1:_Modeling_Radar_Signature_Of_Real-Sized_Aircraft_Using_EM.Tempo]]
| style="width:50px;" | [[image:ART MANH Fig title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_2:_Modeling_Polarimetric_Wave_Propagation_In_The_Lower_Manhattan_Scene_Using_EM.Terrano]]
| style="width:50px;" | [[image:ART PATCH Fig title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_3:_Designing_A_Slot-Coupled_Patch_Antenna_Array_With_A_Corporate_Feed_Network_Using_EM.Picasso]]
| style="width:50px;" | [[image:ART PARAB Fig title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_4:_Modeling_Large_Parabolic_Reflectors_Illuminated_By_Pyramidal_Horn_Antennas_Using_EM.Cube]]
| style="width:50px;" | [[image:ART GOLF Fig title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_5:_Simulating_The_Performance_Of_Installed_Antennas_On_Vehicular_Platforms_Using_EM.Tempo]]
|}
 

<hr>

[[Image:Top_icon.png|30px]] '''[[EM.Cube#EM.Cube Suite Documentation | Back to the Top of the Page]]'''

[[Image:Back_icon.png|30px]] '''[[Main_Page | Back to Emagtech Wiki Gateway]]'''

[[image:RFSpice-ico.png | link=RF.Spice A/D]]   '''[[RF.Spice A/D | Visit RF.Spice A/D Wiki Site]]'''

[[image:NeoScan-ico.png | link=NeoScan]]   '''[[NeoScan | Visit NeoScan Wiki Site]]'''

New Tutorials

2022-02-28T15:38:49Z

Asabet:

== EM.Cube Tutorials ==

Each tutorial lesson listed below walks you through the basic features of one of [[EM.Cube]]'s computational modules:

----------------------------------------------------------------------------------------

Old Tutorial Lessons

* [[EM.Tempo Tutorial Lesson 1: Analyzing A Center-Fed Resonant Dipole Antenna]]
* [[EM.Tempo Tutorial Lesson 2: Analyzing Scattering From A Sphere]]
* [[EM.Tempo Tutorial Lesson 3: Modeling A Probe-Fed Microstrip Patch Antenna]]
* [[EM.Tempo Tutorial Lesson 4: Modeling A Patch Antenna Array]]
* [[EM.Tempo Tutorial Lesson 5: Analyzing A Planar Microstrip Band-Stop Filter]]
* [[EM.Tempo Tutorial Lesson 6: Modeling Rectangular Waveguide Structures]]
* [[EM.Tempo Tutorial Lesson 7: Designing A Pyramidal Horn Antenna]]
* [[EM.Tempo Tutorial Lesson 8: Analyzing A Periodic Frequency Selective Surface]]
* [[EM.Tempo Tutorial Lesson 9: Modeling Coplanar Waveguide Structures And Lumped Devices]]
* [[EM.Tempo Tutorial Lesson 10: Modeling Wave Propagation In Dispersive Media]]
* [[EM.Tempo Tutorial Lesson 11: Simulating A Monopole Antenna Interacting With A Human Head Model]]

Old Tutorial Lessons

* [[EM.Terrano Tutorial Lesson 1: Analyzing A Basic Line-Of-Sight Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 2: Examining A Polarimetric Propagation Channel]]
* [[EM.Terrano Tutorial Lesson 3: Analyzing A Multipath Outdoor Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 4: Analyzing Indoor Propagation Inside a Building Model with Penetrable Walls]]
* [[EM.Terrano Tutorial Lesson 5: Simulating A Dense Urban Canyon Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 6: Modeling Irregular Terrain]]
* [[EM.Terrano Tutorial Lesson 7: Parametric Study Of A Realistic Urban Scene]]
* [[EM.Terrano Tutorial Lesson 8: Simulating A Communications Link With Directional Antennas]]
* [[EM.Terrano Tutorial Lesson 9: A SBR Channel Analysis of An Urban Scene]]
* [[EM.Terrano Tutorial Lesson 10: Modeling A Mobile Communications Link]]

These are the new pages added or modified for [[EM.Cube]] Release R17:

[[New PO Theory]]

[[What's New in EM.Cube R19.1]]

[[OLD What's New in EM.Cube R18.1?]]

[[What's New in EM.Cube R20.1?]]

[[Glossary of EM.Cube's Materials & Other Physical Object Types]]

[[Glossary of EM.Cube's Sources & Devices]]

[[EM.Terrano Tutorial Lesson 4: Analyzing Indoor Propagation Inside a Building Model with Penetrable Walls]]

[[EM.Terrano Tutorial Lesson 9: A SBR Channel Analysis of An Urban Scene]]

[[EM.Terrano Tutorial Lesson 10: Modeling A Mobile Communications Link]]

----------------------------------------------------------------------------------------

These are the old [[EM.Cube]] documentation pages:

[[The Old EM.Cube Wiki Start Page]]

[[THE OLD Getting Started with EM.Cube]]

[[THE OLD What's New in EM.Cube 2016?]]

[[THE OLD Defining Simulation Observables & Visualizing Output Data]]

---------------------------------

[[V&V Article 6: Using EM.Cube And NeoScan System Together For Antenna Design]]

[[Installing EM.Cube]]

[[EM.Cube FAQ]]

----------------------------------------------------------------------------------------

These are all old stuff:

[[NeoScan_Complete]]

[[NeoScan Manuals]]

[[NeoScan Manual Part A: Getting Started]]

<table>
<tr>
<td>
{|class="wikitable"
|-
! [[EM.Cube]]
|-
|[[File:emcubePAGE.png |225px | link=EM.Cube]]
|-
|}
</td>
<td>   </td>
<td>
{|class="wikitable"
|-
! [[RF.Spice A/D | RF.Spice A/D]]
|-
| [[File:RfspicePAGE New.png |277px | link=RF.Spice A/D | RF.Spice A/D]]
|-
|}
</td>
<td>   </td>
<td>
{|class="wikitable"
|-
! [[RF.Spice A/D | B2.Spice A/D]]
|-
| [[File:B2spicePAGE.png |226px | link=RF.Spice A/D | B2.Spice A/D]]
|-
|}
</td>
<td>   </td>
<td>
{|class="wikitable"
|-
! [[NeoScan | NeoScan]]
|-
| [[File:NeoScan_Product.png |245px | link=NeoScan | NeoScan ]]
|-
|}
</td>
</tr>
</table>

----

[[Old Gateway]]

[[Old EM.Cube Page]]

[[Old Digital Glossary]]

----

[[Image:Back_icon.png|40px]] '''[[Main_Page | Back to Emagtech Wiki Gateway]]'''

EM.Cube

2022-02-28T15:38:46Z

Asabet:

[[File:emcubePAGE.png|thumb|450px]]
MODULAR 3D ELECTROMAGNETIC SIMULATION SUITE 
      THAT GROWS WITH YOUR MODELING NEEDS
<table>
<tr>
<td>[[image:Cube-icon.png | link=Getting_Started_with_EM.Cube]] [[image:cad-ico.png | link=Building_Geometrical_Constructions_in_CubeCAD]] [[image:fdtd-ico.png | link=EM.Tempo]] [[image:prop-ico.png | link=EM.Terrano]] [[image:static-ico.png | link=EM.Ferma]] [[image:planar-ico.png | link=EM.Picasso]] [[image:metal-ico.png | link=EM.Libera]] [[image:po-ico.png | link=EM.Illumina]]</td>
<tr>
</table>

'''Welcome to EM.Cube Wiki!'''

== [[image:Cube-icon.png | link=Getting_Started_with_EM.Cube]][[image:cad-ico.png | link=Building_Geometrical_Constructions_in_CubeCAD]] EM.Cube Suite Documentation ==

* [[Getting Started with EM.Cube]]
* [[What%27s_New_in_EM.Cube_R20.1%3F | What's New in EM.Cube 2020?]]
* [[A Review of Maxwell's Equations & Computational Electromagnetics (CEM)]]
* [[Numerical Modeling of Electromagnetic Problems Using EM.Cube]]
* [[Building Geometrical Constructions in CubeCAD]]
* [[Preparing Physical Structures for Electromagnetic Simulation]]
* [[Defining Project Observables & Visualizing Output Data]]
* [[Parametric Modeling & Simulation Modes in EM.Cube]]
* [[Using Python to Create Functions, Models & Scripts]]
* [[Hybrid Modeling in EM.Cube Using Multiple Simulation Engines]]

* [[Glossary of EM.Cube's Basic File, Edit & View Operations]]
* [[Glossary of EM.Cube's Standard Geometric Objects]]
* [[Glossary of EM.Cube's CAD Tools]]
* [[Glossary of EM.Cube's Materials, Sources, Devices & Other Physical Object Types]]



* [[Glossary of EM.Cube's Observables, Data & Graph Types]]
* [[Glossary of EM.Cube's Simulation-Related Operations]]
* [[Glossary of EM.Cube's Wizards]]
* [[Glossary of EM.Cube's Python Functions]]
* [[EM.Cube Application Gallery]]
 

== [[image:fdtd-ico.png]] EM.Tempo Documentation ==

[[EM.Tempo|EM.Tempo Manual]]

[[EM.Tempo]] Tutorial Lessons

New Tutorial Lessons

* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_1.pdf EMTempo Tutorial Lesson 1: Analyzing A Center-Fed Resonant Dipole Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson1.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_2.pdf EMTempo Tutorial Lesson 2: Analyzing Scattering From A Sphere] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson2.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_3.pdf EMTempo Tutorial Lesson 3: Modeling A Probe-Fed Microstrip Patch Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson3.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_4.pdf EMTempo Tutorial Lesson 4: Modeling A Patch Antenna Array] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson4.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_5.pdf EMTempo Tutorial Lesson 5: Analyzing A Planar Microstrip Band-Stop Filter] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson5.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_6.pdf EMTempo Tutorial Lesson 6: Modeling Rectangular Waveguide Structures] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson6.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_7.pdf EMTempo Tutorial Lesson 7: Designing A Pyramidal Horn Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson7.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_8.pdf EMTempo Tutorial Lesson 8: Analyzing A Periodic Frequency Selective Surface] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson8.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_9.pdf EMTempo Tutorial Lesson 9: Modeling Coplanar Waveguide Structures And Lumped Devices] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson9.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_10.pdf EMTempo Tutorial Lesson 10: Modeling Wave Propagation In Dispersive Media] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson10.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_11.pdf EMTempo Tutorial Lesson 11: Simulating A Monopole Antenna Interacting With A Human Head Model] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson11.zip [Download projects]]

Old Tutorial Lessons

* [[EM.Tempo Tutorial Lesson 1: Analyzing A Center-Fed Resonant Dipole Antenna]]
* [[EM.Tempo Tutorial Lesson 2: Analyzing Scattering From A Sphere]]
* [[EM.Tempo Tutorial Lesson 3: Modeling A Probe-Fed Microstrip Patch Antenna]]
* [[EM.Tempo Tutorial Lesson 4: Modeling A Patch Antenna Array]]
* [[EM.Tempo Tutorial Lesson 5: Analyzing A Planar Microstrip Band-Stop Filter]]
* [[EM.Tempo Tutorial Lesson 6: Modeling Rectangular Waveguide Structures]]
* [[EM.Tempo Tutorial Lesson 7: Designing A Pyramidal Horn Antenna]]
* [[EM.Tempo Tutorial Lesson 8: Analyzing A Periodic Frequency Selective Surface]]
* [[EM.Tempo Tutorial Lesson 9: Modeling Coplanar Waveguide Structures And Lumped Devices]]
* [[EM.Tempo Tutorial Lesson 10: Modeling Wave Propagation In Dispersive Media]]
* [[EM.Tempo Tutorial Lesson 11: Simulating A Monopole Antenna Interacting With A Human Head Model]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Tempo L1 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_1:_Analyzing_A_Center-Fed_Resonant_Dipole_Antenna]]
| style="width:50px;" | [[image:Tempo L2 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_2:_Analyzing_Scattering_From_A_Sphere]]
| style="width:50px;" | [[image:Tempo L3 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_3:_Modeling_A_Probe-Fed_Microstrip_Patch_Antenna]]
| style="width:50px;" | [[image:Tempo L4 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_4:_Modeling_A_Patch_Antenna_Array]]
| style="width:50px;" | [[image:Tempo L5 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_5:_Analyzing_A_Planar_Microstrip_Band-Stop_Filter]]
| style="width:50px;" | [[image:Tempo L6 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_6:_Modeling_Rectangular_Waveguide_Structures]]
| style="width:50px;" | [[image:Tempo L7 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_7:_Designing_A_Pyramidal_Horn_Antenna]]
| style="width:50px;" | [[image:Tempo L8 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_8:_Analyzing_A_Periodic_Frequency_Selective_Surface]]
| style="width:50px;" | [[image:Tempo L9 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_9:_Modeling_Coplanar_Waveguide_Structures_And_Lumped_Devices]]
| style="width:50px;" | [[image:Tempo L10 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_10:_Modeling_Wave_Propagation_In_Dispersive_Media]]
| style="width:50px;" | [[image:Tempo L11 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_11:_Simulating_A_Monopole_Antenna_Interacting_With_A_Human_Head_Model]]
|}
 

== [[image:prop-ico.png]] EM.Terrano Documentation ==

[[EM.Terrano|EM.Terrano Manual]]

[[EM.Terrano]] Tutorial Lessons

New Tutorial Lessons

* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_1.pdf EM.Terrano Tutorial Lesson 1: Analyzing A Basic Line-Of-Sight Propagation Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson1.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_2.pdf EM.Terrano Tutorial Lesson 2: Examining A Polarimetric Propagation Channel] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson2.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_3.pdf EM.Terrano Tutorial Lesson 3: Analyzing A Multipath Outdoor Propagation Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson3.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_4.pdf EM.Terrano Tutorial Lesson 4: Analyzing Indoor Propagation Inside a Building Model with Penetrable Walls] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson4.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_5.pdf EM.Terrano Tutorial Lesson 5: Simulating A Dense Urban Canyon Propagation Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson5.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_6.pdf EM.Terrano Tutorial Lesson 6: Modeling Irregular Terrain] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson6.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_7.pdf EM.Terrano Tutorial Lesson 7: Parametric Study Of A Realistic Urban Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson7.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_8.pdf EM.Terrano Tutorial Lesson 8: Simulating A Communications Link With Directional Antennas] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson8.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_9.pdf EM.Terrano Tutorial Lesson 9: A SBR Channel Analysis of An Urban Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson9.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_10.pdf EM.Terrano Tutorial Lesson 10: Modeling A Mobile Communications Link] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson10.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_11.pdf EM.Terrano Tutorial Lesson 11: Performing Link Margin Analysis Over the Spherical Earth] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson11.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_12.pdf EM.Terrano Tutorial Lesson 12: Simulating a Communication Link Involving Software-Defined Radios] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson12.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_13.pdf EM.Terrano Tutorial Lesson 13: Simulating Links with Directional Antennas on Rotating Platforms] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson13.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_14.pdf EM.Terrano Tutorial Lesson 14: Atmospheric Propagation Effects & Tropospheric Ducting] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson14.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_15.pdf EM.Terrano Tutorial Lesson 15: Performing Link Margin Analysis on a Realistic Terrain Model] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson15.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_16.pdf EM.Terrano Tutorial Lesson 16: Performing Link Margin Analysis above a Sea Surface Model] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson16.zip [Download projects]]

Old Tutorial Lessons

* [[EM.Terrano Tutorial Lesson 1: Analyzing A Basic Line-Of-Sight Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 2: Examining A Polarimetric Propagation Channel]]
* [[EM.Terrano Tutorial Lesson 3: Analyzing A Multipath Outdoor Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 4: Analyzing Indoor Propagation Inside a Building Model with Penetrable Walls]]
* [[EM.Terrano Tutorial Lesson 5: Simulating A Dense Urban Canyon Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 6: Modeling Irregular Terrain]]
* [[EM.Terrano Tutorial Lesson 7: Parametric Study Of A Realistic Urban Scene]]
* [[EM.Terrano Tutorial Lesson 8: Simulating A Communications Link With Directional Antennas]]
* [[EM.Terrano Tutorial Lesson 9: A SBR Channel Analysis of An Urban Scene]]
* [[EM.Terrano Tutorial Lesson 10: Modeling A Mobile Communications Link]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Terrano L1 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_1:_Analyzing_A_Basic_Line-Of-Sight_Propagation_Scene]]
| style="width:50px;" | [[image:Terrano L2N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_2:_Examining_A_Polarimetric_Propagation_Channel]]
| style="width:50px;" | [[image:Terrano L3N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_3:_Analyzing_A_Multipath_Outdoor_Propagation_Scene]]
| style="width:50px;" | [[image:Terrano L4N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_4:_Analyzing_Indoor_Propagation_Inside_A_Multi-Story_Building_Model]]
| style="width:50px;" | [[image:Terrano L5N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_5:_Simulating_A_Dense_Urban_Canyon_Propagation_Scene]]
| style="width:50px;" | [[image:Terrano L6N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_6:_Modeling_Irregular_Terrain]]
| style="width:50px;" | [[image:Terrano L7N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_7:_Parametric_Study_Of_A_Realistic_Urban_Scene]]
| style="width:50px;" | [[image:Terrano L8N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_8:_Simulating_A_Communications_Link_With_Directional_Antennas]]
| style="width:50px;" | [[image:Terrano L9N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_9:_Modeling_A_Mobile_Communications_Link_Using_Python]]
|}
 

== [[image:static-ico.png]] EM.Ferma Documentation ==

[[EM.Ferma|EM.Ferma Manual]]

[[EM.Ferma]] Tutorial Lessons

* [[EM.Ferma Tutorial Lesson 1: Computing The Electric Field & Potential Due To Spherical Charges]]
* [[EM.Ferma Tutorial Lesson 2: Analyzing A Parallel Plate Capacitor]]
* [[EM.Ferma Tutorial Lesson 3: Modeling Objects Immersed In A Uniform Electric Field]]
* [[EM.Ferma Tutorial Lesson 4: Computing The Magnetic Field Of Linear Currents In Free Space & Magnetic Media]]
* [[EM.Ferma Tutorial Lesson 5: Modeling Solenoids & Toroidal Coils]]
* [[EM.Ferma Tutorial Lesson 6: Analyzing Permanent Magnets]]
* [[EM.Ferma Tutorial Lesson 7: Analyzing A Microstrip Transmission Line]]
* [[EM.Ferma Tutorial Lesson 8: Modeling 2D Coplanar Waveguide Structures]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Ferma L1 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_1:_Computing_The_Electric_Field_%26_Potential_Due_To_Spherical_Charges]]
| style="width:50px;" | [[image:Ferma L2 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_2:_Analyzing_A_Parallel_Plate_Capacitor]]
| style="width:50px;" | [[image:Ferma L3 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_3:_Modeling_Objects_Immersed_In_A_Uniform_Electric_Field]]
| style="width:50px;" | [[image:Ferma L4 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_4:_Computing_The_Magnetic_Field_Of_Linear_Currents_In_Free_Space_%26_Magnetic_Media]]
| style="width:50px;" | [[image:Ferma L5 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_5:_Modeling_Solenoids_%26_Toroidal_Coils]]
| style="width:50px;" | [[image:Ferma L6 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_6:_Analyzing_Permanent_Magnets]]
| style="width:50px;" | [[image:Ferma L7 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_7:_Analyzing_A_Microstrip_Transmission_Line]]
| style="width:50px;" | [[image:Ferma L8 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_8:_Modeling_2D_Coplanar_Waveguide_Structures]]
|}
 

== [[image:planar-ico.png]] EM.Picasso Documentation ==

[[EM.Picasso|EM.Picasso Manual]]

[[EM.Picasso]] Tutorial Lessons

* [[EM.Picasso Tutorial Lesson 1: Analyzing A Microstrip-Fed Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 2: Designing A Patch Antenna With A Recessed Feed]]
* [[EM.Picasso Tutorial Lesson 3: Analyzing A Planar Microstrip Band-Stop Filter]]
* [[EM.Picasso Tutorial Lesson 4: Designing A Circularly Polarized Probe-Fed Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 5: Analyzing Patch Antenna Arrays]]
* [[EM.Picasso Tutorial Lesson 6: Analyzing A Periodic Frequency Selective Surface]]
* [[EM.Picasso Tutorial Lesson 7: Designing A Slot-Coupled Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 8: Analyzing A CPW-Fed Folded Dipole Slot Antenna]]
* [[EM.Picasso Tutorial Lesson 9: Designing a Microstrip Wilkinson Power Divider]]
* [[EM.Picasso Tutorial Lesson 10: Optimizing A Microstrip Patch Antenna Design]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Picasso L1 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_1:_Analyzing_A_Microstrip-Fed_Patch_Antenna]]
| style="width:50px;" | [[image:Picasso L2 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_2:_Designing_A_Patch_Antenna_With_A_Recessed_Feed]]
| style="width:50px;" | [[image:Picasso L3 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_3:_Analyzing_A_Planar_Microstrip_Band-Stop_Filter]]
| style="width:50px;" | [[image:Picasso L4 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_4:_Designing_A_Circularly_Polarized_Probe-Fed_Patch_Antenna]]
| style="width:50px;" | [[image:Picasso L5 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_5:_Analyzing_Patch_Antenna_Arrays]]
| style="width:50px;" | [[image:Picasso L6 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_6:_Analyzing_A_Periodic_Frequency_Selective_Surface]]
| style="width:50px;" | [[image:Picasso L7 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_7:_Designing_A_Slot-Coupled_Patch_Antenna]]
| style="width:50px;" | [[image:Picasso L8 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_8:_Analyzing_A_CPW-Fed_Folded_Dipole_Slot_Antenna]]
| style="width:50px;" | [[image:Picasso L9 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_9:_Designing_a_Microstrip_Wilkinson_Power_Divider]]
| style="width:50px;" | [[image:Picasso L10 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_10:_Optimizing_A_Microstrip_Patch_Antenna_Design]]
|}
 

== [[image:metal-ico.png]] EM.Libera Documentation ==

[[EM.Libera|EM.Libera Manual]]

[[EM.Libera]] Tutorial Lessons

* [[EM.Libera Tutorial Lesson 1: Analyzing A Center-Fed Wire Dipole Antenna]]
* [[EM.Libera Tutorial Lesson 2: Designing A Yagi-Uda Dipole Array]]
* [[EM.Libera Tutorial Lesson 3: Computing The Radar Cross Section Of Metallic, Dielectric & Composite Targets]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Libera L1 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Libera_Tutorial_Lesson_1:_Analyzing_A_Center-Fed_Wire_Dipole_Antenna]]
| style="width:50px;" | [[image:Libera L2 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Libera_Tutorial_Lesson_2:_Designing_A_Yagi-Uda_Dipole_Array]]
| style="width:50px;" | [[image:Libera L3 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Libera_Tutorial_Lesson_3:_Computing_The_Radar_Cross_Section_Of_Metallic,_Dielectric_%26_Composite_Targets]]
|}
 

== [[image:po-ico.png]] EM.Illumina Documentation ==

[[EM.Illumina|EM.Illumina Manual]]

[[EM.Illumina]] Tutorial Lessons

* [[EM.Illumina Tutorial Lesson 1: Analyzing The Scattering From Metal Targets]]
* [[EM.Illumina Tutorial Lesson 2: Computing The Radar Cross Section Of Corner Reflectors]]
* [[EM.Illumina Tutorial Lesson 3: Computing The Radiation Pattern Of Parabolic Dish Reflectors]]
* [[EM.Illumina Tutorial Lesson 4: Simulating Radiation In The Presence Of Large Metallic Shipboard Platforms]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Illumina L1 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Illumina_Tutorial_Lesson_1:_Analyzing_The_Scattering_From_Metal_Targets]]
| style="width:50px;" | [[image:Illumina L2 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Illumina_Tutorial_Lesson_2:_Computing_The_Radar_Cross_Section_Of_Corner_Reflectors]]
| style="width:50px;" | [[image:Illumina L3 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Illumina_Tutorial_Lesson_3:_Computing_The_Radiation_Pattern_Of_Parabolic_Dish_Reflectors]]
| style="width:50px;" | [[image:Illumina L4 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Illumina_Tutorial_Lesson_4:_Simulating_Radiation_In_The_Presence_Of_Large_Metallic_Shipboard_Platforms]]
|}

 

== [[image:Cube-icon.png | link=Getting_Started_with_EM.Cube]] EM.Cube Articles & Notes ==

Verification & Validation Articles

* [[V&V Article 1: Modeling Complex Frequency Selective Surfaces Using EM.Cube]]

* [[V&V Article 2: Computing Radar Cross Section Of Metallic Targets Using EM.Cube]]

* [[V&V Article 3: Modeling Broadband And Circularly Polarized Patch Antennas Using EM.Picasso]]

* [[V&V Article 4: Designing Wideband Dielectric Resonator Antennas Using EM.Tempo]]

* [[V&V Article 5: Modeling Dispersive Materials Using EM.Tempo]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:ART FSS title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_1:_Modeling_Complex_Frequency_Selective_Surfaces_Using_EM.Cube]]
| style="width:50px;" | [[image:ART RCS title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_2:_Computing_Radar_Cross_Section_Of_Metallic_Targets_Using_EM.Cube]]
| style="width:50px;" | [[image:ART UWB title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_3:_Modeling_Broadband_And_Circularly_Polarized_Patch_Antennas_Using_EM.Picasso]]
| style="width:50px;" | [[image:ART DRA title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_4:_Designing_Wideband_Dielectric_Resonator_Antennas_Using_EM.Tempo]]
| style="width:50px;" | [[image:ART DISP title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_5:_Modeling_Dispersive_Materials_Using_EM.Tempo]]
|}

Application Notes

* [[Application Note 1: Modeling Radar Signature Of Real-Sized Aircraft Using EM.Tempo]]

* [[Application Note 2: Modeling Polarimetric Wave Propagation In The Lower Manhattan Scene Using EM.Terrano]]

* [[Application Note 3: Designing A Slot-Coupled Patch Antenna Array With A Corporate Feed Network Using EM.Picasso]]

* [[Application Note 4: Modeling Large Parabolic Reflectors Illuminated By Pyramidal Horn Antennas Using EM.Cube]]

* [[Application Note 5: Simulating The Performance Of Installed Antennas On Vehicular Platforms Using EM.Tempo]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:ART AIR title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_1:_Modeling_Radar_Signature_Of_Real-Sized_Aircraft_Using_EM.Tempo]]
| style="width:50px;" | [[image:ART MANH Fig title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_2:_Modeling_Polarimetric_Wave_Propagation_In_The_Lower_Manhattan_Scene_Using_EM.Terrano]]
| style="width:50px;" | [[image:ART PATCH Fig title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_3:_Designing_A_Slot-Coupled_Patch_Antenna_Array_With_A_Corporate_Feed_Network_Using_EM.Picasso]]
| style="width:50px;" | [[image:ART PARAB Fig title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_4:_Modeling_Large_Parabolic_Reflectors_Illuminated_By_Pyramidal_Horn_Antennas_Using_EM.Cube]]
| style="width:50px;" | [[image:ART GOLF Fig title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_5:_Simulating_The_Performance_Of_Installed_Antennas_On_Vehicular_Platforms_Using_EM.Tempo]]
|}
 

<hr>

[[Image:Top_icon.png|30px]] '''[[EM.Cube#EM.Cube Suite Documentation | Back to the Top of the Page]]'''

[[Image:Back_icon.png|30px]] '''[[Main_Page | Back to Emagtech Wiki Gateway]]'''

[[image:RFSpice-ico.png | link=RF.Spice A/D]]   '''[[RF.Spice A/D | Visit RF.Spice A/D Wiki Site]]'''

[[image:NeoScan-ico.png | link=NeoScan]]   '''[[NeoScan | Visit NeoScan Wiki Site]]'''

EM.Cube

2022-02-26T05:41:44Z

Asabet:

[[File:emcubePAGE.png|thumb|450px]]
MODULAR 3D ELECTROMAGNETIC SIMULATION SUITE 
      THAT GROWS WITH YOUR MODELING NEEDS
<table>
<tr>
<td>[[image:Cube-icon.png | link=Getting_Started_with_EM.Cube]] [[image:cad-ico.png | link=Building_Geometrical_Constructions_in_CubeCAD]] [[image:fdtd-ico.png | link=EM.Tempo]] [[image:prop-ico.png | link=EM.Terrano]] [[image:static-ico.png | link=EM.Ferma]] [[image:planar-ico.png | link=EM.Picasso]] [[image:metal-ico.png | link=EM.Libera]] [[image:po-ico.png | link=EM.Illumina]]</td>
<tr>
</table>

'''Welcome to EM.Cube Wiki!'''

== [[image:Cube-icon.png | link=Getting_Started_with_EM.Cube]][[image:cad-ico.png | link=Building_Geometrical_Constructions_in_CubeCAD]] EM.Cube Suite Documentation ==

* [[Getting Started with EM.Cube]]
* [[What%27s_New_in_EM.Cube_R20.1%3F | What's New in EM.Cube 2020?]]
* [[A Review of Maxwell's Equations & Computational Electromagnetics (CEM)]]
* [[Numerical Modeling of Electromagnetic Problems Using EM.Cube]]
* [[Building Geometrical Constructions in CubeCAD]]
* [[Preparing Physical Structures for Electromagnetic Simulation]]
* [[Defining Project Observables & Visualizing Output Data]]
* [[Parametric Modeling & Simulation Modes in EM.Cube]]
* [[Using Python to Create Functions, Models & Scripts]]
* [[Hybrid Modeling in EM.Cube Using Multiple Simulation Engines]]

* [[Glossary of EM.Cube's Basic File, Edit & View Operations]]
* [[Glossary of EM.Cube's Standard Geometric Objects]]
* [[Glossary of EM.Cube's CAD Tools]]
* [[Glossary of EM.Cube's Materials, Sources, Devices & Other Physical Object Types]]



* [[Glossary of EM.Cube's Observables, Data & Graph Types]]
* [[Glossary of EM.Cube's Simulation-Related Operations]]
* [[Glossary of EM.Cube's Wizards]]
* [[Glossary of EM.Cube's Python Functions]]
* [[EM.Cube Application Gallery]]
 

== [[image:fdtd-ico.png]] EM.Tempo Documentation ==

[[EM.Tempo|EM.Tempo Manual]]

[[EM.Tempo]] Tutorial Lessons

New Tutorial Lessons

* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_1.pdf EMTempo Tutorial Lesson 1: Analyzing A Center-Fed Resonant Dipole Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson1.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_2.pdf EMTempo Tutorial Lesson 2: Analyzing Scattering From A Sphere] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson2.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_3.pdf EMTempo Tutorial Lesson 3: Modeling A Probe-Fed Microstrip Patch Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson3.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_4.pdf EMTempo Tutorial Lesson 4: Modeling A Patch Antenna Array] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson4.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_5.pdf EMTempo Tutorial Lesson 5: Analyzing A Planar Microstrip Band-Stop Filter] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson5.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_6.pdf EMTempo Tutorial Lesson 6: Modeling Rectangular Waveguide Structures] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson6.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_7.pdf EMTempo Tutorial Lesson 7: Designing A Pyramidal Horn Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson7.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_8.pdf EMTempo Tutorial Lesson 8: Analyzing A Periodic Frequency Selective Surface] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson8.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_9.pdf EMTempo Tutorial Lesson 9: Modeling Coplanar Waveguide Structures And Lumped Devices] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson9.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_10.pdf EMTempo Tutorial Lesson 10: Modeling Wave Propagation In Dispersive Media] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson10.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_11.pdf EMTempo Tutorial Lesson 11: Simulating A Monopole Antenna Interacting With A Human Head Model] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson11.zip [Download projects]]

Old Tutorial Lessons

* [[EM.Tempo Tutorial Lesson 1: Analyzing A Center-Fed Resonant Dipole Antenna]]
* [[EM.Tempo Tutorial Lesson 2: Analyzing Scattering From A Sphere]]
* [[EM.Tempo Tutorial Lesson 3: Modeling A Probe-Fed Microstrip Patch Antenna]]
* [[EM.Tempo Tutorial Lesson 4: Modeling A Patch Antenna Array]]
* [[EM.Tempo Tutorial Lesson 5: Analyzing A Planar Microstrip Band-Stop Filter]]
* [[EM.Tempo Tutorial Lesson 6: Modeling Rectangular Waveguide Structures]]
* [[EM.Tempo Tutorial Lesson 7: Designing A Pyramidal Horn Antenna]]
* [[EM.Tempo Tutorial Lesson 8: Analyzing A Periodic Frequency Selective Surface]]
* [[EM.Tempo Tutorial Lesson 9: Modeling Coplanar Waveguide Structures And Lumped Devices]]
* [[EM.Tempo Tutorial Lesson 10: Modeling Wave Propagation In Dispersive Media]]
* [[EM.Tempo Tutorial Lesson 11: Simulating A Monopole Antenna Interacting With A Human Head Model]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Tempo L1 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_1:_Analyzing_A_Center-Fed_Resonant_Dipole_Antenna]]
| style="width:50px;" | [[image:Tempo L2 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_2:_Analyzing_Scattering_From_A_Sphere]]
| style="width:50px;" | [[image:Tempo L3 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_3:_Modeling_A_Probe-Fed_Microstrip_Patch_Antenna]]
| style="width:50px;" | [[image:Tempo L4 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_4:_Modeling_A_Patch_Antenna_Array]]
| style="width:50px;" | [[image:Tempo L5 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_5:_Analyzing_A_Planar_Microstrip_Band-Stop_Filter]]
| style="width:50px;" | [[image:Tempo L6 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_6:_Modeling_Rectangular_Waveguide_Structures]]
| style="width:50px;" | [[image:Tempo L7 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_7:_Designing_A_Pyramidal_Horn_Antenna]]
| style="width:50px;" | [[image:Tempo L8 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_8:_Analyzing_A_Periodic_Frequency_Selective_Surface]]
| style="width:50px;" | [[image:Tempo L9 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_9:_Modeling_Coplanar_Waveguide_Structures_And_Lumped_Devices]]
| style="width:50px;" | [[image:Tempo L10 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_10:_Modeling_Wave_Propagation_In_Dispersive_Media]]
| style="width:50px;" | [[image:Tempo L11 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_11:_Simulating_A_Monopole_Antenna_Interacting_With_A_Human_Head_Model]]
|}
 

== [[image:prop-ico.png]] EM.Terrano Documentation ==

[[EM.Terrano|EM.Terrano Manual]]

[[EM.Terrano]] Tutorial Lessons

New Tutorial Lessons

* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_1.pdf EM.Terrano Tutorial Lesson 1: Analyzing A Basic Line-Of-Sight Propagation Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson1.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_2.pdf EM.Terrano Tutorial Lesson 2: Examining A Polarimetric Propagation Channel] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson2.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_3.pdf EM.Terrano Tutorial Lesson 3: Analyzing A Multipath Outdoor Propagation Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson3.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_4.pdf EM.Terrano Tutorial Lesson 4: Analyzing Indoor Propagation Inside a Building Model with Penetrable Walls] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson4.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_5.pdf EM.Terrano Tutorial Lesson 5: Simulating A Dense Urban Canyon Propagation Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson5.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_6.pdf EM.Terrano Tutorial Lesson 6: Modeling Irregular Terrain] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson6.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_7.pdf EM.Terrano Tutorial Lesson 7: Parametric Study Of A Realistic Urban Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson7.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_8.pdf EM.Terrano Tutorial Lesson 8: Simulating A Communications Link With Directional Antennas] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson8.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_9.pdf EM.Terrano Tutorial Lesson 9: A SBR Channel Analysis of An Urban Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson9.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_10.pdf EM.Terrano Tutorial Lesson 10: Modeling A Mobile Communications Link] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson10.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_11.pdf EM.Terrano Tutorial Lesson 11: Performing Link Margin Analysis Over the Spherical Earth] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson11.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_12.pdf EM.Terrano Tutorial Lesson 12: Simulating a Communication Link Involving Software-Defined Radios] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson12.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_13.pdf EM.Terrano Tutorial Lesson 13: Simulating Links with Directional Antennas on Rotating Platforms] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson13.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_14.pdf EM.Terrano Tutorial Lesson 14: Atmospheric Propagation Effects & Tropospheric Ducting] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson14.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_15.pdf EM.Terrano Tutorial Lesson 15: Performing Link Margin Analysis on a Realistic Terrain Model] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson15.zip [Download projects]]

Old Tutorial Lessons

* [[EM.Terrano Tutorial Lesson 1: Analyzing A Basic Line-Of-Sight Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 2: Examining A Polarimetric Propagation Channel]]
* [[EM.Terrano Tutorial Lesson 3: Analyzing A Multipath Outdoor Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 4: Analyzing Indoor Propagation Inside a Building Model with Penetrable Walls]]
* [[EM.Terrano Tutorial Lesson 5: Simulating A Dense Urban Canyon Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 6: Modeling Irregular Terrain]]
* [[EM.Terrano Tutorial Lesson 7: Parametric Study Of A Realistic Urban Scene]]
* [[EM.Terrano Tutorial Lesson 8: Simulating A Communications Link With Directional Antennas]]
* [[EM.Terrano Tutorial Lesson 9: A SBR Channel Analysis of An Urban Scene]]
* [[EM.Terrano Tutorial Lesson 10: Modeling A Mobile Communications Link]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Terrano L1 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_1:_Analyzing_A_Basic_Line-Of-Sight_Propagation_Scene]]
| style="width:50px;" | [[image:Terrano L2N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_2:_Examining_A_Polarimetric_Propagation_Channel]]
| style="width:50px;" | [[image:Terrano L3N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_3:_Analyzing_A_Multipath_Outdoor_Propagation_Scene]]
| style="width:50px;" | [[image:Terrano L4N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_4:_Analyzing_Indoor_Propagation_Inside_A_Multi-Story_Building_Model]]
| style="width:50px;" | [[image:Terrano L5N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_5:_Simulating_A_Dense_Urban_Canyon_Propagation_Scene]]
| style="width:50px;" | [[image:Terrano L6N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_6:_Modeling_Irregular_Terrain]]
| style="width:50px;" | [[image:Terrano L7N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_7:_Parametric_Study_Of_A_Realistic_Urban_Scene]]
| style="width:50px;" | [[image:Terrano L8N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_8:_Simulating_A_Communications_Link_With_Directional_Antennas]]
| style="width:50px;" | [[image:Terrano L9N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_9:_Modeling_A_Mobile_Communications_Link_Using_Python]]
|}
 

== [[image:static-ico.png]] EM.Ferma Documentation ==

[[EM.Ferma|EM.Ferma Manual]]

[[EM.Ferma]] Tutorial Lessons

* [[EM.Ferma Tutorial Lesson 1: Computing The Electric Field & Potential Due To Spherical Charges]]
* [[EM.Ferma Tutorial Lesson 2: Analyzing A Parallel Plate Capacitor]]
* [[EM.Ferma Tutorial Lesson 3: Modeling Objects Immersed In A Uniform Electric Field]]
* [[EM.Ferma Tutorial Lesson 4: Computing The Magnetic Field Of Linear Currents In Free Space & Magnetic Media]]
* [[EM.Ferma Tutorial Lesson 5: Modeling Solenoids & Toroidal Coils]]
* [[EM.Ferma Tutorial Lesson 6: Analyzing Permanent Magnets]]
* [[EM.Ferma Tutorial Lesson 7: Analyzing A Microstrip Transmission Line]]
* [[EM.Ferma Tutorial Lesson 8: Modeling 2D Coplanar Waveguide Structures]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Ferma L1 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_1:_Computing_The_Electric_Field_%26_Potential_Due_To_Spherical_Charges]]
| style="width:50px;" | [[image:Ferma L2 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_2:_Analyzing_A_Parallel_Plate_Capacitor]]
| style="width:50px;" | [[image:Ferma L3 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_3:_Modeling_Objects_Immersed_In_A_Uniform_Electric_Field]]
| style="width:50px;" | [[image:Ferma L4 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_4:_Computing_The_Magnetic_Field_Of_Linear_Currents_In_Free_Space_%26_Magnetic_Media]]
| style="width:50px;" | [[image:Ferma L5 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_5:_Modeling_Solenoids_%26_Toroidal_Coils]]
| style="width:50px;" | [[image:Ferma L6 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_6:_Analyzing_Permanent_Magnets]]
| style="width:50px;" | [[image:Ferma L7 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_7:_Analyzing_A_Microstrip_Transmission_Line]]
| style="width:50px;" | [[image:Ferma L8 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_8:_Modeling_2D_Coplanar_Waveguide_Structures]]
|}
 

== [[image:planar-ico.png]] EM.Picasso Documentation ==

[[EM.Picasso|EM.Picasso Manual]]

[[EM.Picasso]] Tutorial Lessons

* [[EM.Picasso Tutorial Lesson 1: Analyzing A Microstrip-Fed Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 2: Designing A Patch Antenna With A Recessed Feed]]
* [[EM.Picasso Tutorial Lesson 3: Analyzing A Planar Microstrip Band-Stop Filter]]
* [[EM.Picasso Tutorial Lesson 4: Designing A Circularly Polarized Probe-Fed Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 5: Analyzing Patch Antenna Arrays]]
* [[EM.Picasso Tutorial Lesson 6: Analyzing A Periodic Frequency Selective Surface]]
* [[EM.Picasso Tutorial Lesson 7: Designing A Slot-Coupled Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 8: Analyzing A CPW-Fed Folded Dipole Slot Antenna]]
* [[EM.Picasso Tutorial Lesson 9: Designing a Microstrip Wilkinson Power Divider]]
* [[EM.Picasso Tutorial Lesson 10: Optimizing A Microstrip Patch Antenna Design]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Picasso L1 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_1:_Analyzing_A_Microstrip-Fed_Patch_Antenna]]
| style="width:50px;" | [[image:Picasso L2 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_2:_Designing_A_Patch_Antenna_With_A_Recessed_Feed]]
| style="width:50px;" | [[image:Picasso L3 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_3:_Analyzing_A_Planar_Microstrip_Band-Stop_Filter]]
| style="width:50px;" | [[image:Picasso L4 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_4:_Designing_A_Circularly_Polarized_Probe-Fed_Patch_Antenna]]
| style="width:50px;" | [[image:Picasso L5 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_5:_Analyzing_Patch_Antenna_Arrays]]
| style="width:50px;" | [[image:Picasso L6 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_6:_Analyzing_A_Periodic_Frequency_Selective_Surface]]
| style="width:50px;" | [[image:Picasso L7 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_7:_Designing_A_Slot-Coupled_Patch_Antenna]]
| style="width:50px;" | [[image:Picasso L8 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_8:_Analyzing_A_CPW-Fed_Folded_Dipole_Slot_Antenna]]
| style="width:50px;" | [[image:Picasso L9 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_9:_Designing_a_Microstrip_Wilkinson_Power_Divider]]
| style="width:50px;" | [[image:Picasso L10 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_10:_Optimizing_A_Microstrip_Patch_Antenna_Design]]
|}
 

== [[image:metal-ico.png]] EM.Libera Documentation ==

[[EM.Libera|EM.Libera Manual]]

[[EM.Libera]] Tutorial Lessons

* [[EM.Libera Tutorial Lesson 1: Analyzing A Center-Fed Wire Dipole Antenna]]
* [[EM.Libera Tutorial Lesson 2: Designing A Yagi-Uda Dipole Array]]
* [[EM.Libera Tutorial Lesson 3: Computing The Radar Cross Section Of Metallic, Dielectric & Composite Targets]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Libera L1 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Libera_Tutorial_Lesson_1:_Analyzing_A_Center-Fed_Wire_Dipole_Antenna]]
| style="width:50px;" | [[image:Libera L2 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Libera_Tutorial_Lesson_2:_Designing_A_Yagi-Uda_Dipole_Array]]
| style="width:50px;" | [[image:Libera L3 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Libera_Tutorial_Lesson_3:_Computing_The_Radar_Cross_Section_Of_Metallic,_Dielectric_%26_Composite_Targets]]
|}
 

== [[image:po-ico.png]] EM.Illumina Documentation ==

[[EM.Illumina|EM.Illumina Manual]]

[[EM.Illumina]] Tutorial Lessons

* [[EM.Illumina Tutorial Lesson 1: Analyzing The Scattering From Metal Targets]]
* [[EM.Illumina Tutorial Lesson 2: Computing The Radar Cross Section Of Corner Reflectors]]
* [[EM.Illumina Tutorial Lesson 3: Computing The Radiation Pattern Of Parabolic Dish Reflectors]]
* [[EM.Illumina Tutorial Lesson 4: Simulating Radiation In The Presence Of Large Metallic Shipboard Platforms]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Illumina L1 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Illumina_Tutorial_Lesson_1:_Analyzing_The_Scattering_From_Metal_Targets]]
| style="width:50px;" | [[image:Illumina L2 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Illumina_Tutorial_Lesson_2:_Computing_The_Radar_Cross_Section_Of_Corner_Reflectors]]
| style="width:50px;" | [[image:Illumina L3 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Illumina_Tutorial_Lesson_3:_Computing_The_Radiation_Pattern_Of_Parabolic_Dish_Reflectors]]
| style="width:50px;" | [[image:Illumina L4 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Illumina_Tutorial_Lesson_4:_Simulating_Radiation_In_The_Presence_Of_Large_Metallic_Shipboard_Platforms]]
|}

 

== [[image:Cube-icon.png | link=Getting_Started_with_EM.Cube]] EM.Cube Articles & Notes ==

Verification & Validation Articles

* [[V&V Article 1: Modeling Complex Frequency Selective Surfaces Using EM.Cube]]

* [[V&V Article 2: Computing Radar Cross Section Of Metallic Targets Using EM.Cube]]

* [[V&V Article 3: Modeling Broadband And Circularly Polarized Patch Antennas Using EM.Picasso]]

* [[V&V Article 4: Designing Wideband Dielectric Resonator Antennas Using EM.Tempo]]

* [[V&V Article 5: Modeling Dispersive Materials Using EM.Tempo]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:ART FSS title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_1:_Modeling_Complex_Frequency_Selective_Surfaces_Using_EM.Cube]]
| style="width:50px;" | [[image:ART RCS title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_2:_Computing_Radar_Cross_Section_Of_Metallic_Targets_Using_EM.Cube]]
| style="width:50px;" | [[image:ART UWB title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_3:_Modeling_Broadband_And_Circularly_Polarized_Patch_Antennas_Using_EM.Picasso]]
| style="width:50px;" | [[image:ART DRA title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_4:_Designing_Wideband_Dielectric_Resonator_Antennas_Using_EM.Tempo]]
| style="width:50px;" | [[image:ART DISP title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_5:_Modeling_Dispersive_Materials_Using_EM.Tempo]]
|}

Application Notes

* [[Application Note 1: Modeling Radar Signature Of Real-Sized Aircraft Using EM.Tempo]]

* [[Application Note 2: Modeling Polarimetric Wave Propagation In The Lower Manhattan Scene Using EM.Terrano]]

* [[Application Note 3: Designing A Slot-Coupled Patch Antenna Array With A Corporate Feed Network Using EM.Picasso]]

* [[Application Note 4: Modeling Large Parabolic Reflectors Illuminated By Pyramidal Horn Antennas Using EM.Cube]]

* [[Application Note 5: Simulating The Performance Of Installed Antennas On Vehicular Platforms Using EM.Tempo]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:ART AIR title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_1:_Modeling_Radar_Signature_Of_Real-Sized_Aircraft_Using_EM.Tempo]]
| style="width:50px;" | [[image:ART MANH Fig title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_2:_Modeling_Polarimetric_Wave_Propagation_In_The_Lower_Manhattan_Scene_Using_EM.Terrano]]
| style="width:50px;" | [[image:ART PATCH Fig title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_3:_Designing_A_Slot-Coupled_Patch_Antenna_Array_With_A_Corporate_Feed_Network_Using_EM.Picasso]]
| style="width:50px;" | [[image:ART PARAB Fig title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_4:_Modeling_Large_Parabolic_Reflectors_Illuminated_By_Pyramidal_Horn_Antennas_Using_EM.Cube]]
| style="width:50px;" | [[image:ART GOLF Fig title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_5:_Simulating_The_Performance_Of_Installed_Antennas_On_Vehicular_Platforms_Using_EM.Tempo]]
|}
 

<hr>

[[Image:Top_icon.png|30px]] '''[[EM.Cube#EM.Cube Suite Documentation | Back to the Top of the Page]]'''

[[Image:Back_icon.png|30px]] '''[[Main_Page | Back to Emagtech Wiki Gateway]]'''

[[image:RFSpice-ico.png | link=RF.Spice A/D]]   '''[[RF.Spice A/D | Visit RF.Spice A/D Wiki Site]]'''

[[image:NeoScan-ico.png | link=NeoScan]]   '''[[NeoScan | Visit NeoScan Wiki Site]]'''

EM.Cube

2022-02-25T19:55:02Z

Asabet:

[[File:emcubePAGE.png|thumb|450px]]
MODULAR 3D ELECTROMAGNETIC SIMULATION SUITE 
      THAT GROWS WITH YOUR MODELING NEEDS
<table>
<tr>
<td>[[image:Cube-icon.png | link=Getting_Started_with_EM.Cube]] [[image:cad-ico.png | link=Building_Geometrical_Constructions_in_CubeCAD]] [[image:fdtd-ico.png | link=EM.Tempo]] [[image:prop-ico.png | link=EM.Terrano]] [[image:static-ico.png | link=EM.Ferma]] [[image:planar-ico.png | link=EM.Picasso]] [[image:metal-ico.png | link=EM.Libera]] [[image:po-ico.png | link=EM.Illumina]]</td>
<tr>
</table>

'''Welcome to EM.Cube Wiki!'''

== [[image:Cube-icon.png | link=Getting_Started_with_EM.Cube]][[image:cad-ico.png | link=Building_Geometrical_Constructions_in_CubeCAD]] EM.Cube Suite Documentation ==

* [[Getting Started with EM.Cube]]
* [[What%27s_New_in_EM.Cube_R20.1%3F | What's New in EM.Cube 2020?]]
* [[A Review of Maxwell's Equations & Computational Electromagnetics (CEM)]]
* [[Numerical Modeling of Electromagnetic Problems Using EM.Cube]]
* [[Building Geometrical Constructions in CubeCAD]]
* [[Preparing Physical Structures for Electromagnetic Simulation]]
* [[Defining Project Observables & Visualizing Output Data]]
* [[Parametric Modeling & Simulation Modes in EM.Cube]]
* [[Using Python to Create Functions, Models & Scripts]]
* [[Hybrid Modeling in EM.Cube Using Multiple Simulation Engines]]

* [[Glossary of EM.Cube's Basic File, Edit & View Operations]]
* [[Glossary of EM.Cube's Standard Geometric Objects]]
* [[Glossary of EM.Cube's CAD Tools]]
* [[Glossary of EM.Cube's Materials, Sources, Devices & Other Physical Object Types]]



* [[Glossary of EM.Cube's Observables, Data & Graph Types]]
* [[Glossary of EM.Cube's Simulation-Related Operations]]
* [[Glossary of EM.Cube's Wizards]]
* [[Glossary of EM.Cube's Python Functions]]
* [[EM.Cube Application Gallery]]
 

== [[image:fdtd-ico.png]] EM.Tempo Documentation ==

[[EM.Tempo|EM.Tempo Manual]]

[[EM.Tempo]] Tutorial Lessons

 
New Tutorial Lessons

 
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_1.pdf EMTempo Tutorial Lesson 1: Analyzing A Center-Fed Resonant Dipole Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson1.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_2.pdf EMTempo Tutorial Lesson 2: Analyzing Scattering From A Sphere] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson2.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_3.pdf EMTempo Tutorial Lesson 3: Modeling A Probe-Fed Microstrip Patch Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson3.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_4.pdf EMTempo Tutorial Lesson 4: Modeling A Patch Antenna Array] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson4.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_5.pdf EMTempo Tutorial Lesson 5: Analyzing A Planar Microstrip Band-Stop Filter] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson5.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_6.pdf EMTempo Tutorial Lesson 6: Modeling Rectangular Waveguide Structures] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson6.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_7.pdf EMTempo Tutorial Lesson 7: Designing A Pyramidal Horn Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson7.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_8.pdf EMTempo Tutorial Lesson 8: Analyzing A Periodic Frequency Selective Surface] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson8.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_9.pdf EMTempo Tutorial Lesson 9: Modeling Coplanar Waveguide Structures And Lumped Devices] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson9.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_10.pdf EMTempo Tutorial Lesson 10: Modeling Wave Propagation In Dispersive Media] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson10.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_11.pdf EMTempo Tutorial Lesson 11: Simulating A Monopole Antenna Interacting With A Human Head Model] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson11.zip [Download projects]]

 
Old Tutorial Lessons

 

* [[EM.Tempo Tutorial Lesson 1: Analyzing A Center-Fed Resonant Dipole Antenna]]
* [[EM.Tempo Tutorial Lesson 2: Analyzing Scattering From A Sphere]]
* [[EM.Tempo Tutorial Lesson 3: Modeling A Probe-Fed Microstrip Patch Antenna]]
* [[EM.Tempo Tutorial Lesson 4: Modeling A Patch Antenna Array]]
* [[EM.Tempo Tutorial Lesson 5: Analyzing A Planar Microstrip Band-Stop Filter]]
* [[EM.Tempo Tutorial Lesson 6: Modeling Rectangular Waveguide Structures]]
* [[EM.Tempo Tutorial Lesson 7: Designing A Pyramidal Horn Antenna]]
* [[EM.Tempo Tutorial Lesson 8: Analyzing A Periodic Frequency Selective Surface]]
* [[EM.Tempo Tutorial Lesson 9: Modeling Coplanar Waveguide Structures And Lumped Devices]]
* [[EM.Tempo Tutorial Lesson 10: Modeling Wave Propagation In Dispersive Media]]
* [[EM.Tempo Tutorial Lesson 11: Simulating A Monopole Antenna Interacting With A Human Head Model]]

 

{| class="wikitable"
|-
| style="width:50px;" | [[image:Tempo L1 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_1:_Analyzing_A_Center-Fed_Resonant_Dipole_Antenna]]
| style="width:50px;" | [[image:Tempo L2 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_2:_Analyzing_Scattering_From_A_Sphere]]
| style="width:50px;" | [[image:Tempo L3 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_3:_Modeling_A_Probe-Fed_Microstrip_Patch_Antenna]]
| style="width:50px;" | [[image:Tempo L4 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_4:_Modeling_A_Patch_Antenna_Array]]
| style="width:50px;" | [[image:Tempo L5 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_5:_Analyzing_A_Planar_Microstrip_Band-Stop_Filter]]
| style="width:50px;" | [[image:Tempo L6 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_6:_Modeling_Rectangular_Waveguide_Structures]]
| style="width:50px;" | [[image:Tempo L7 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_7:_Designing_A_Pyramidal_Horn_Antenna]]
| style="width:50px;" | [[image:Tempo L8 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_8:_Analyzing_A_Periodic_Frequency_Selective_Surface]]
| style="width:50px;" | [[image:Tempo L9 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_9:_Modeling_Coplanar_Waveguide_Structures_And_Lumped_Devices]]
| style="width:50px;" | [[image:Tempo L10 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_10:_Modeling_Wave_Propagation_In_Dispersive_Media]]
| style="width:50px;" | [[image:Tempo L11 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_11:_Simulating_A_Monopole_Antenna_Interacting_With_A_Human_Head_Model]]
|}
 

== [[image:prop-ico.png]] EM.Terrano Documentation ==

[[EM.Terrano|EM.Terrano Manual]]

[[EM.Terrano]] Tutorial Lessons

 
New Tutorial Lessons

 
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_1.pdf EM.Terrano Tutorial Lesson 1: Analyzing A Basic Line-Of-Sight Propagation Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson1.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_2.pdf EM.Terrano Tutorial Lesson 2: Examining A Polarimetric Propagation Channel] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson2.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_3.pdf EM.Terrano Tutorial Lesson 3: Analyzing A Multipath Outdoor Propagation Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson3.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_4.pdf EM.Terrano Tutorial Lesson 4: Analyzing Indoor Propagation Inside a Building Model with Penetrable Walls] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson4.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_5.pdf EM.Terrano Tutorial Lesson 5: Simulating A Dense Urban Canyon Propagation Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson5.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_6.pdf EM.Terrano Tutorial Lesson 6: Modeling Irregular Terrain] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson6.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_7.pdf EM.Terrano Tutorial Lesson 7: Parametric Study Of A Realistic Urban Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson7.zip [[Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_8.pdf EM.Terrano Tutorial Lesson 8: Simulating A Communications Link With Directional Antennas] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson8.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_9.pdf EM.Terrano Tutorial Lesson 9: A SBR Channel Analysis of An Urban Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson9.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_10.pdf EM.Terrano Tutorial Lesson 10: Modeling A Mobile Communications Link] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson10.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_11.pdf EM.Terrano Tutorial Lesson 11: Performing Link Margin Analysis Over the Spherical Earth] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson11.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_12.pdf EM.Terrano Tutorial Lesson 12: Simulating a Communication Link Involving Software-Defined Radios] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson12.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_13.pdf EM.Terrano Tutorial Lesson 13: Simulating Links with Directional Antennas on Rotating Platforms] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson13.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_14.pdf EM.Terrano Tutorial Lesson 14: Atmospheric Propagation Effects & Tropospheric Ducting] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson14.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_15.pdf EM.Terrano Tutorial Lesson 15: Performing Link Margin Analysis on a Realistic Terrain Model] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson15.zip [Download projects]]
 

Old Tutorial Lessons

 

* [[EM.Terrano Tutorial Lesson 1: Analyzing A Basic Line-Of-Sight Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 2: Examining A Polarimetric Propagation Channel]]
* [[EM.Terrano Tutorial Lesson 3: Analyzing A Multipath Outdoor Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 4: Analyzing Indoor Propagation Inside a Building Model with Penetrable Walls]]
* [[EM.Terrano Tutorial Lesson 5: Simulating A Dense Urban Canyon Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 6: Modeling Irregular Terrain]]
* [[EM.Terrano Tutorial Lesson 7: Parametric Study Of A Realistic Urban Scene]]
* [[EM.Terrano Tutorial Lesson 8: Simulating A Communications Link With Directional Antennas]]
* [[EM.Terrano Tutorial Lesson 9: A SBR Channel Analysis of An Urban Scene]]
* [[EM.Terrano Tutorial Lesson 10: Modeling A Mobile Communications Link]]

 

{| class="wikitable"
|-
| style="width:50px;" | [[image:Terrano L1 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_1:_Analyzing_A_Basic_Line-Of-Sight_Propagation_Scene]]
| style="width:50px;" | [[image:Terrano L2N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_2:_Examining_A_Polarimetric_Propagation_Channel]]
| style="width:50px;" | [[image:Terrano L3N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_3:_Analyzing_A_Multipath_Outdoor_Propagation_Scene]]
| style="width:50px;" | [[image:Terrano L4N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_4:_Analyzing_Indoor_Propagation_Inside_A_Multi-Story_Building_Model]]
| style="width:50px;" | [[image:Terrano L5N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_5:_Simulating_A_Dense_Urban_Canyon_Propagation_Scene]]
| style="width:50px;" | [[image:Terrano L6N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_6:_Modeling_Irregular_Terrain]]
| style="width:50px;" | [[image:Terrano L7N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_7:_Parametric_Study_Of_A_Realistic_Urban_Scene]]
| style="width:50px;" | [[image:Terrano L8N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_8:_Simulating_A_Communications_Link_With_Directional_Antennas]]
| style="width:50px;" | [[image:Terrano L9N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_9:_Modeling_A_Mobile_Communications_Link_Using_Python]]
|}
 

== [[image:static-ico.png]] EM.Ferma Documentation ==

[[EM.Ferma|EM.Ferma Manual]]

[[EM.Ferma]] Tutorial Lessons

* [[EM.Ferma Tutorial Lesson 1: Computing The Electric Field & Potential Due To Spherical Charges]]
* [[EM.Ferma Tutorial Lesson 2: Analyzing A Parallel Plate Capacitor]]
* [[EM.Ferma Tutorial Lesson 3: Modeling Objects Immersed In A Uniform Electric Field]]
* [[EM.Ferma Tutorial Lesson 4: Computing The Magnetic Field Of Linear Currents In Free Space & Magnetic Media]]
* [[EM.Ferma Tutorial Lesson 5: Modeling Solenoids & Toroidal Coils]]
* [[EM.Ferma Tutorial Lesson 6: Analyzing Permanent Magnets]]
* [[EM.Ferma Tutorial Lesson 7: Analyzing A Microstrip Transmission Line]]
* [[EM.Ferma Tutorial Lesson 8: Modeling 2D Coplanar Waveguide Structures]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Ferma L1 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_1:_Computing_The_Electric_Field_%26_Potential_Due_To_Spherical_Charges]]
| style="width:50px;" | [[image:Ferma L2 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_2:_Analyzing_A_Parallel_Plate_Capacitor]]
| style="width:50px;" | [[image:Ferma L3 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_3:_Modeling_Objects_Immersed_In_A_Uniform_Electric_Field]]
| style="width:50px;" | [[image:Ferma L4 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_4:_Computing_The_Magnetic_Field_Of_Linear_Currents_In_Free_Space_%26_Magnetic_Media]]
| style="width:50px;" | [[image:Ferma L5 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_5:_Modeling_Solenoids_%26_Toroidal_Coils]]
| style="width:50px;" | [[image:Ferma L6 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_6:_Analyzing_Permanent_Magnets]]
| style="width:50px;" | [[image:Ferma L7 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_7:_Analyzing_A_Microstrip_Transmission_Line]]
| style="width:50px;" | [[image:Ferma L8 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_8:_Modeling_2D_Coplanar_Waveguide_Structures]]
|}
 

== [[image:planar-ico.png]] EM.Picasso Documentation ==

[[EM.Picasso|EM.Picasso Manual]]

[[EM.Picasso]] Tutorial Lessons

* [[EM.Picasso Tutorial Lesson 1: Analyzing A Microstrip-Fed Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 2: Designing A Patch Antenna With A Recessed Feed]]
* [[EM.Picasso Tutorial Lesson 3: Analyzing A Planar Microstrip Band-Stop Filter]]
* [[EM.Picasso Tutorial Lesson 4: Designing A Circularly Polarized Probe-Fed Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 5: Analyzing Patch Antenna Arrays]]
* [[EM.Picasso Tutorial Lesson 6: Analyzing A Periodic Frequency Selective Surface]]
* [[EM.Picasso Tutorial Lesson 7: Designing A Slot-Coupled Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 8: Analyzing A CPW-Fed Folded Dipole Slot Antenna]]
* [[EM.Picasso Tutorial Lesson 9: Designing a Microstrip Wilkinson Power Divider]]
* [[EM.Picasso Tutorial Lesson 10: Optimizing A Microstrip Patch Antenna Design]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Picasso L1 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_1:_Analyzing_A_Microstrip-Fed_Patch_Antenna]]
| style="width:50px;" | [[image:Picasso L2 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_2:_Designing_A_Patch_Antenna_With_A_Recessed_Feed]]
| style="width:50px;" | [[image:Picasso L3 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_3:_Analyzing_A_Planar_Microstrip_Band-Stop_Filter]]
| style="width:50px;" | [[image:Picasso L4 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_4:_Designing_A_Circularly_Polarized_Probe-Fed_Patch_Antenna]]
| style="width:50px;" | [[image:Picasso L5 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_5:_Analyzing_Patch_Antenna_Arrays]]
| style="width:50px;" | [[image:Picasso L6 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_6:_Analyzing_A_Periodic_Frequency_Selective_Surface]]
| style="width:50px;" | [[image:Picasso L7 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_7:_Designing_A_Slot-Coupled_Patch_Antenna]]
| style="width:50px;" | [[image:Picasso L8 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_8:_Analyzing_A_CPW-Fed_Folded_Dipole_Slot_Antenna]]
| style="width:50px;" | [[image:Picasso L9 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_9:_Designing_a_Microstrip_Wilkinson_Power_Divider]]
| style="width:50px;" | [[image:Picasso L10 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_10:_Optimizing_A_Microstrip_Patch_Antenna_Design]]
|}
 

== [[image:metal-ico.png]] EM.Libera Documentation ==

[[EM.Libera|EM.Libera Manual]]

[[EM.Libera]] Tutorial Lessons

* [[EM.Libera Tutorial Lesson 1: Analyzing A Center-Fed Wire Dipole Antenna]]
* [[EM.Libera Tutorial Lesson 2: Designing A Yagi-Uda Dipole Array]]
* [[EM.Libera Tutorial Lesson 3: Computing The Radar Cross Section Of Metallic, Dielectric & Composite Targets]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Libera L1 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Libera_Tutorial_Lesson_1:_Analyzing_A_Center-Fed_Wire_Dipole_Antenna]]
| style="width:50px;" | [[image:Libera L2 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Libera_Tutorial_Lesson_2:_Designing_A_Yagi-Uda_Dipole_Array]]
| style="width:50px;" | [[image:Libera L3 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Libera_Tutorial_Lesson_3:_Computing_The_Radar_Cross_Section_Of_Metallic,_Dielectric_%26_Composite_Targets]]
|}
 

== [[image:po-ico.png]] EM.Illumina Documentation ==

[[EM.Illumina|EM.Illumina Manual]]

[[EM.Illumina]] Tutorial Lessons

* [[EM.Illumina Tutorial Lesson 1: Analyzing The Scattering From Metal Targets]]
* [[EM.Illumina Tutorial Lesson 2: Computing The Radar Cross Section Of Corner Reflectors]]
* [[EM.Illumina Tutorial Lesson 3: Computing The Radiation Pattern Of Parabolic Dish Reflectors]]
* [[EM.Illumina Tutorial Lesson 4: Simulating Radiation In The Presence Of Large Metallic Shipboard Platforms]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Illumina L1 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Illumina_Tutorial_Lesson_1:_Analyzing_The_Scattering_From_Metal_Targets]]
| style="width:50px;" | [[image:Illumina L2 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Illumina_Tutorial_Lesson_2:_Computing_The_Radar_Cross_Section_Of_Corner_Reflectors]]
| style="width:50px;" | [[image:Illumina L3 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Illumina_Tutorial_Lesson_3:_Computing_The_Radiation_Pattern_Of_Parabolic_Dish_Reflectors]]
| style="width:50px;" | [[image:Illumina L4 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Illumina_Tutorial_Lesson_4:_Simulating_Radiation_In_The_Presence_Of_Large_Metallic_Shipboard_Platforms]]
|}

 

== [[image:Cube-icon.png | link=Getting_Started_with_EM.Cube]] EM.Cube Articles & Notes ==

Verification & Validation Articles

* [[V&V Article 1: Modeling Complex Frequency Selective Surfaces Using EM.Cube]]

* [[V&V Article 2: Computing Radar Cross Section Of Metallic Targets Using EM.Cube]]

* [[V&V Article 3: Modeling Broadband And Circularly Polarized Patch Antennas Using EM.Picasso]]

* [[V&V Article 4: Designing Wideband Dielectric Resonator Antennas Using EM.Tempo]]

* [[V&V Article 5: Modeling Dispersive Materials Using EM.Tempo]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:ART FSS title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_1:_Modeling_Complex_Frequency_Selective_Surfaces_Using_EM.Cube]]
| style="width:50px;" | [[image:ART RCS title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_2:_Computing_Radar_Cross_Section_Of_Metallic_Targets_Using_EM.Cube]]
| style="width:50px;" | [[image:ART UWB title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_3:_Modeling_Broadband_And_Circularly_Polarized_Patch_Antennas_Using_EM.Picasso]]
| style="width:50px;" | [[image:ART DRA title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_4:_Designing_Wideband_Dielectric_Resonator_Antennas_Using_EM.Tempo]]
| style="width:50px;" | [[image:ART DISP title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_5:_Modeling_Dispersive_Materials_Using_EM.Tempo]]
|}

Application Notes

* [[Application Note 1: Modeling Radar Signature Of Real-Sized Aircraft Using EM.Tempo]]

* [[Application Note 2: Modeling Polarimetric Wave Propagation In The Lower Manhattan Scene Using EM.Terrano]]

* [[Application Note 3: Designing A Slot-Coupled Patch Antenna Array With A Corporate Feed Network Using EM.Picasso]]

* [[Application Note 4: Modeling Large Parabolic Reflectors Illuminated By Pyramidal Horn Antennas Using EM.Cube]]

* [[Application Note 5: Simulating The Performance Of Installed Antennas On Vehicular Platforms Using EM.Tempo]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:ART AIR title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_1:_Modeling_Radar_Signature_Of_Real-Sized_Aircraft_Using_EM.Tempo]]
| style="width:50px;" | [[image:ART MANH Fig title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_2:_Modeling_Polarimetric_Wave_Propagation_In_The_Lower_Manhattan_Scene_Using_EM.Terrano]]
| style="width:50px;" | [[image:ART PATCH Fig title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_3:_Designing_A_Slot-Coupled_Patch_Antenna_Array_With_A_Corporate_Feed_Network_Using_EM.Picasso]]
| style="width:50px;" | [[image:ART PARAB Fig title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_4:_Modeling_Large_Parabolic_Reflectors_Illuminated_By_Pyramidal_Horn_Antennas_Using_EM.Cube]]
| style="width:50px;" | [[image:ART GOLF Fig title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_5:_Simulating_The_Performance_Of_Installed_Antennas_On_Vehicular_Platforms_Using_EM.Tempo]]
|}
 

<hr>

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EM.Cube

2022-02-23T22:46:10Z

Asabet:

[[File:emcubePAGE.png|thumb|450px]]
MODULAR 3D ELECTROMAGNETIC SIMULATION SUITE 
      THAT GROWS WITH YOUR MODELING NEEDS
<table>
<tr>
<td>[[image:Cube-icon.png | link=Getting_Started_with_EM.Cube]] [[image:cad-ico.png | link=Building_Geometrical_Constructions_in_CubeCAD]] [[image:fdtd-ico.png | link=EM.Tempo]] [[image:prop-ico.png | link=EM.Terrano]] [[image:static-ico.png | link=EM.Ferma]] [[image:planar-ico.png | link=EM.Picasso]] [[image:metal-ico.png | link=EM.Libera]] [[image:po-ico.png | link=EM.Illumina]]</td>
<tr>
</table>

'''Welcome to EM.Cube Wiki!'''

== [[image:Cube-icon.png | link=Getting_Started_with_EM.Cube]][[image:cad-ico.png | link=Building_Geometrical_Constructions_in_CubeCAD]] EM.Cube Suite Documentation ==

* [[Getting Started with EM.Cube]]
* [[What%27s_New_in_EM.Cube_R20.1%3F | What's New in EM.Cube 2020?]]
* [[A Review of Maxwell's Equations & Computational Electromagnetics (CEM)]]
* [[Numerical Modeling of Electromagnetic Problems Using EM.Cube]]
* [[Building Geometrical Constructions in CubeCAD]]
* [[Preparing Physical Structures for Electromagnetic Simulation]]
* [[Defining Project Observables & Visualizing Output Data]]
* [[Parametric Modeling & Simulation Modes in EM.Cube]]
* [[Using Python to Create Functions, Models & Scripts]]
* [[Hybrid Modeling in EM.Cube Using Multiple Simulation Engines]]

* [[Glossary of EM.Cube's Basic File, Edit & View Operations]]
* [[Glossary of EM.Cube's Standard Geometric Objects]]
* [[Glossary of EM.Cube's CAD Tools]]
* [[Glossary of EM.Cube's Materials, Sources, Devices & Other Physical Object Types]]



* [[Glossary of EM.Cube's Observables, Data & Graph Types]]
* [[Glossary of EM.Cube's Simulation-Related Operations]]
* [[Glossary of EM.Cube's Wizards]]
* [[Glossary of EM.Cube's Python Functions]]
* [[EM.Cube Application Gallery]]
 

== [[image:fdtd-ico.png]] EM.Tempo Documentation ==

[[EM.Tempo|EM.Tempo Manual]]

[[EM.Tempo]] Tutorial Lessons

* [[EM.Tempo Tutorial Lesson 1: Analyzing A Center-Fed Resonant Dipole Antenna]]
* [[EM.Tempo Tutorial Lesson 2: Analyzing Scattering From A Sphere]]
* [[EM.Tempo Tutorial Lesson 3: Modeling A Probe-Fed Microstrip Patch Antenna]]
* [[EM.Tempo Tutorial Lesson 4: Modeling A Patch Antenna Array]]
* [[EM.Tempo Tutorial Lesson 5: Analyzing A Planar Microstrip Band-Stop Filter]]
* [[EM.Tempo Tutorial Lesson 6: Modeling Rectangular Waveguide Structures]]
* [[EM.Tempo Tutorial Lesson 7: Designing A Pyramidal Horn Antenna]]
* [[EM.Tempo Tutorial Lesson 8: Analyzing A Periodic Frequency Selective Surface]]
* [[EM.Tempo Tutorial Lesson 9: Modeling Coplanar Waveguide Structures And Lumped Devices]]
* [[EM.Tempo Tutorial Lesson 10: Modeling Wave Propagation In Dispersive Media]]
* [[EM.Tempo Tutorial Lesson 11: Simulating A Monopole Antenna Interacting With A Human Head Model]]

 
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_1.pdf EMTempo Tutorial Lesson 1: Analyzing A Center-Fed Resonant Dipole Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson1.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_2.pdf EMTempo Tutorial Lesson 2: Analyzing Scattering From A Sphere] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson2.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_3.pdf EMTempo Tutorial Lesson 3: Modeling A Probe-Fed Microstrip Patch Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson3.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_4.pdf EMTempo Tutorial Lesson 4: Modeling A Patch Antenna Array] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson4.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_5.pdf EMTempo Tutorial Lesson 5: Analyzing A Planar Microstrip Band-Stop Filter] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson5.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_6.pdf EMTempo Tutorial Lesson 6: Modeling Rectangular Waveguide Structures] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson6.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_7.pdf EMTempo Tutorial Lesson 7: Designing A Pyramidal Horn Antenna] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson7.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_8.pdf EMTempo Tutorial Lesson 8: Analyzing A Periodic Frequency Selective Surface] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson8.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_9.pdf EMTempo Tutorial Lesson 9: Modeling Coplanar Waveguide Structures And Lumped Devices] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson9.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_10.pdf EMTempo Tutorial Lesson 10: Modeling Wave Propagation In Dispersive Media] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson10.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson_11.pdf EMTempo Tutorial Lesson 11: Simulating A Monopole Antenna Interacting With A Human Head Model] [http://www.emagtech.com/downloads/ProjectRepo/EMTempo_Lesson11.zip [Download projects]]
 

{| class="wikitable"
|-
| style="width:50px;" | [[image:Tempo L1 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_1:_Analyzing_A_Center-Fed_Resonant_Dipole_Antenna]]
| style="width:50px;" | [[image:Tempo L2 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_2:_Analyzing_Scattering_From_A_Sphere]]
| style="width:50px;" | [[image:Tempo L3 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_3:_Modeling_A_Probe-Fed_Microstrip_Patch_Antenna]]
| style="width:50px;" | [[image:Tempo L4 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_4:_Modeling_A_Patch_Antenna_Array]]
| style="width:50px;" | [[image:Tempo L5 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_5:_Analyzing_A_Planar_Microstrip_Band-Stop_Filter]]
| style="width:50px;" | [[image:Tempo L6 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_6:_Modeling_Rectangular_Waveguide_Structures]]
| style="width:50px;" | [[image:Tempo L7 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_7:_Designing_A_Pyramidal_Horn_Antenna]]
| style="width:50px;" | [[image:Tempo L8 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_8:_Analyzing_A_Periodic_Frequency_Selective_Surface]]
| style="width:50px;" | [[image:Tempo L9 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_9:_Modeling_Coplanar_Waveguide_Structures_And_Lumped_Devices]]
| style="width:50px;" | [[image:Tempo L10 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_10:_Modeling_Wave_Propagation_In_Dispersive_Media]]
| style="width:50px;" | [[image:Tempo L11 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Tempo_Tutorial_Lesson_11:_Simulating_A_Monopole_Antenna_Interacting_With_A_Human_Head_Model]]
|}
 

== [[image:prop-ico.png]] EM.Terrano Documentation ==

[[EM.Terrano|EM.Terrano Manual]]

[[EM.Terrano]] Tutorial Lessons

* [[EM.Terrano Tutorial Lesson 1: Analyzing A Basic Line-Of-Sight Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 2: Examining A Polarimetric Propagation Channel]]
* [[EM.Terrano Tutorial Lesson 3: Analyzing A Multipath Outdoor Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 4: Analyzing Indoor Propagation Inside a Building Model with Penetrable Walls]]
* [[EM.Terrano Tutorial Lesson 5: Simulating A Dense Urban Canyon Propagation Scene]]
* [[EM.Terrano Tutorial Lesson 6: Modeling Irregular Terrain]]
* [[EM.Terrano Tutorial Lesson 7: Parametric Study Of A Realistic Urban Scene]]
* [[EM.Terrano Tutorial Lesson 8: Simulating A Communications Link With Directional Antennas]]
* [[EM.Terrano Tutorial Lesson 9: A SBR Channel Analysis of An Urban Scene]]
* [[EM.Terrano Tutorial Lesson 10: Modeling A Mobile Communications Link]]

 
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_1.pdf EM.Terrano Tutorial Lesson 1: Analyzing A Basic Line-Of-Sight Propagation Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson1.zip [[Image:Download2x.png|10px]] Download projects]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_2.pdf EM.Terrano Tutorial Lesson 2: Examining A Polarimetric Propagation Channel] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson2.zip [[Image:Download2x.png|10px]] Download projects]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_3.pdf EM.Terrano Tutorial Lesson 3: Analyzing A Multipath Outdoor Propagation Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson3.zip [[Image:Download2x.png|10px]] Download projects]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_4.pdf EM.Terrano Tutorial Lesson 4: Analyzing Indoor Propagation Inside a Building Model with Penetrable Walls] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson4.zip [[Image:Download2x.png|10px]] Download projects]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_5.pdf EM.Terrano Tutorial Lesson 5: Simulating A Dense Urban Canyon Propagation Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson5.zip [[Image:Download2x.png|10px]] Download projects]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_6.pdf EM.Terrano Tutorial Lesson 6: Modeling Irregular Terrain] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson6.zip [[Image:Download2x.png|10px]] Download projects]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_7.pdf EM.Terrano Tutorial Lesson 7: Parametric Study Of A Realistic Urban Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson7.zip [Download projects]]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_8.pdf EM.Terrano Tutorial Lesson 8: Simulating A Communications Link With Directional Antennas] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson8.zip [[Image:Download2x.png|10px]] Download projects]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_9.pdf EM.Terrano Tutorial Lesson 9: A SBR Channel Analysis of An Urban Scene] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson9.zip [[Image:Download2x.png|10px]] Download projects]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_10.pdf EM.Terrano Tutorial Lesson 10: Modeling A Mobile Communications Link] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson10.zip [[Image:Download2x.png|10px]] Download projects]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_11.pdf EM.Terrano Tutorial Lesson 11: Performing Link Margin Analysis Over the Spherical Earth] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson11.zip [[Image:Download2x.png|10px]] Download projects]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_12.pdf EM.Terrano Tutorial Lesson 12: Simulating a Communication Link Involving Software-Defined Radios] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson12.zip [[Image:Download2x.png|10px]] Download projects]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_13.pdf EM.Terrano Tutorial Lesson 13: Simulating Links with Directional Antennas on Rotating Platforms] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson13.zip [[Image:Download2x.png|10px]] Download projects]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_14.pdf EM.Terrano Tutorial Lesson 14: Atmospheric Propagation Effects & Tropospheric Ducting] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson14.zip [[Image:Download2x.png|10px]] Download projects]
* [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson_15.pdf EM.Terrano Tutorial Lesson 15: Performing Link Margin Analysis on a Realistic Terrain Model] [http://www.emagtech.com/downloads/ProjectRepo/EMTerrano_Lesson15.zip [[Image:Download2x.png|10px]] Download projects]
 

{| class="wikitable"
|-
| style="width:50px;" | [[image:Terrano L1 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_1:_Analyzing_A_Basic_Line-Of-Sight_Propagation_Scene]]
| style="width:50px;" | [[image:Terrano L2N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_2:_Examining_A_Polarimetric_Propagation_Channel]]
| style="width:50px;" | [[image:Terrano L3N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_3:_Analyzing_A_Multipath_Outdoor_Propagation_Scene]]
| style="width:50px;" | [[image:Terrano L4N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_4:_Analyzing_Indoor_Propagation_Inside_A_Multi-Story_Building_Model]]
| style="width:50px;" | [[image:Terrano L5N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_5:_Simulating_A_Dense_Urban_Canyon_Propagation_Scene]]
| style="width:50px;" | [[image:Terrano L6N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_6:_Modeling_Irregular_Terrain]]
| style="width:50px;" | [[image:Terrano L7N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_7:_Parametric_Study_Of_A_Realistic_Urban_Scene]]
| style="width:50px;" | [[image:Terrano L8N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_8:_Simulating_A_Communications_Link_With_Directional_Antennas]]
| style="width:50px;" | [[image:Terrano L9N Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Terrano_Tutorial_Lesson_9:_Modeling_A_Mobile_Communications_Link_Using_Python]]
|}
 

== [[image:static-ico.png]] EM.Ferma Documentation ==

[[EM.Ferma|EM.Ferma Manual]]

[[EM.Ferma]] Tutorial Lessons

* [[EM.Ferma Tutorial Lesson 1: Computing The Electric Field & Potential Due To Spherical Charges]]
* [[EM.Ferma Tutorial Lesson 2: Analyzing A Parallel Plate Capacitor]]
* [[EM.Ferma Tutorial Lesson 3: Modeling Objects Immersed In A Uniform Electric Field]]
* [[EM.Ferma Tutorial Lesson 4: Computing The Magnetic Field Of Linear Currents In Free Space & Magnetic Media]]
* [[EM.Ferma Tutorial Lesson 5: Modeling Solenoids & Toroidal Coils]]
* [[EM.Ferma Tutorial Lesson 6: Analyzing Permanent Magnets]]
* [[EM.Ferma Tutorial Lesson 7: Analyzing A Microstrip Transmission Line]]
* [[EM.Ferma Tutorial Lesson 8: Modeling 2D Coplanar Waveguide Structures]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Ferma L1 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_1:_Computing_The_Electric_Field_%26_Potential_Due_To_Spherical_Charges]]
| style="width:50px;" | [[image:Ferma L2 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_2:_Analyzing_A_Parallel_Plate_Capacitor]]
| style="width:50px;" | [[image:Ferma L3 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_3:_Modeling_Objects_Immersed_In_A_Uniform_Electric_Field]]
| style="width:50px;" | [[image:Ferma L4 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_4:_Computing_The_Magnetic_Field_Of_Linear_Currents_In_Free_Space_%26_Magnetic_Media]]
| style="width:50px;" | [[image:Ferma L5 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_5:_Modeling_Solenoids_%26_Toroidal_Coils]]
| style="width:50px;" | [[image:Ferma L6 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_6:_Analyzing_Permanent_Magnets]]
| style="width:50px;" | [[image:Ferma L7 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_7:_Analyzing_A_Microstrip_Transmission_Line]]
| style="width:50px;" | [[image:Ferma L8 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Ferma_Tutorial_Lesson_8:_Modeling_2D_Coplanar_Waveguide_Structures]]
|}
 

== [[image:planar-ico.png]] EM.Picasso Documentation ==

[[EM.Picasso|EM.Picasso Manual]]

[[EM.Picasso]] Tutorial Lessons

* [[EM.Picasso Tutorial Lesson 1: Analyzing A Microstrip-Fed Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 2: Designing A Patch Antenna With A Recessed Feed]]
* [[EM.Picasso Tutorial Lesson 3: Analyzing A Planar Microstrip Band-Stop Filter]]
* [[EM.Picasso Tutorial Lesson 4: Designing A Circularly Polarized Probe-Fed Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 5: Analyzing Patch Antenna Arrays]]
* [[EM.Picasso Tutorial Lesson 6: Analyzing A Periodic Frequency Selective Surface]]
* [[EM.Picasso Tutorial Lesson 7: Designing A Slot-Coupled Patch Antenna]]
* [[EM.Picasso Tutorial Lesson 8: Analyzing A CPW-Fed Folded Dipole Slot Antenna]]
* [[EM.Picasso Tutorial Lesson 9: Designing a Microstrip Wilkinson Power Divider]]
* [[EM.Picasso Tutorial Lesson 10: Optimizing A Microstrip Patch Antenna Design]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Picasso L1 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_1:_Analyzing_A_Microstrip-Fed_Patch_Antenna]]
| style="width:50px;" | [[image:Picasso L2 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_2:_Designing_A_Patch_Antenna_With_A_Recessed_Feed]]
| style="width:50px;" | [[image:Picasso L3 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_3:_Analyzing_A_Planar_Microstrip_Band-Stop_Filter]]
| style="width:50px;" | [[image:Picasso L4 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_4:_Designing_A_Circularly_Polarized_Probe-Fed_Patch_Antenna]]
| style="width:50px;" | [[image:Picasso L5 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_5:_Analyzing_Patch_Antenna_Arrays]]
| style="width:50px;" | [[image:Picasso L6 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_6:_Analyzing_A_Periodic_Frequency_Selective_Surface]]
| style="width:50px;" | [[image:Picasso L7 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_7:_Designing_A_Slot-Coupled_Patch_Antenna]]
| style="width:50px;" | [[image:Picasso L8 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_8:_Analyzing_A_CPW-Fed_Folded_Dipole_Slot_Antenna]]
| style="width:50px;" | [[image:Picasso L9 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_9:_Designing_a_Microstrip_Wilkinson_Power_Divider]]
| style="width:50px;" | [[image:Picasso L10 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Picasso_Tutorial_Lesson_10:_Optimizing_A_Microstrip_Patch_Antenna_Design]]
|}
 

== [[image:metal-ico.png]] EM.Libera Documentation ==

[[EM.Libera|EM.Libera Manual]]

[[EM.Libera]] Tutorial Lessons

* [[EM.Libera Tutorial Lesson 1: Analyzing A Center-Fed Wire Dipole Antenna]]
* [[EM.Libera Tutorial Lesson 2: Designing A Yagi-Uda Dipole Array]]
* [[EM.Libera Tutorial Lesson 3: Computing The Radar Cross Section Of Metallic, Dielectric & Composite Targets]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Libera L1 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Libera_Tutorial_Lesson_1:_Analyzing_A_Center-Fed_Wire_Dipole_Antenna]]
| style="width:50px;" | [[image:Libera L2 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Libera_Tutorial_Lesson_2:_Designing_A_Yagi-Uda_Dipole_Array]]
| style="width:50px;" | [[image:Libera L3 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Libera_Tutorial_Lesson_3:_Computing_The_Radar_Cross_Section_Of_Metallic,_Dielectric_%26_Composite_Targets]]
|}
 

== [[image:po-ico.png]] EM.Illumina Documentation ==

[[EM.Illumina|EM.Illumina Manual]]

[[EM.Illumina]] Tutorial Lessons

* [[EM.Illumina Tutorial Lesson 1: Analyzing The Scattering From Metal Targets]]
* [[EM.Illumina Tutorial Lesson 2: Computing The Radar Cross Section Of Corner Reflectors]]
* [[EM.Illumina Tutorial Lesson 3: Computing The Radiation Pattern Of Parabolic Dish Reflectors]]
* [[EM.Illumina Tutorial Lesson 4: Simulating Radiation In The Presence Of Large Metallic Shipboard Platforms]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:Illumina L1 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Illumina_Tutorial_Lesson_1:_Analyzing_The_Scattering_From_Metal_Targets]]
| style="width:50px;" | [[image:Illumina L2 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Illumina_Tutorial_Lesson_2:_Computing_The_Radar_Cross_Section_Of_Corner_Reflectors]]
| style="width:50px;" | [[image:Illumina L3 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Illumina_Tutorial_Lesson_3:_Computing_The_Radiation_Pattern_Of_Parabolic_Dish_Reflectors]]
| style="width:50px;" | [[image:Illumina L4 Fig title.png|50px| link=http://www.emagtech.com/wiki/index.php?title=EM.Illumina_Tutorial_Lesson_4:_Simulating_Radiation_In_The_Presence_Of_Large_Metallic_Shipboard_Platforms]]
|}

 

== [[image:Cube-icon.png | link=Getting_Started_with_EM.Cube]] EM.Cube Articles & Notes ==

Verification & Validation Articles

* [[V&V Article 1: Modeling Complex Frequency Selective Surfaces Using EM.Cube]]

* [[V&V Article 2: Computing Radar Cross Section Of Metallic Targets Using EM.Cube]]

* [[V&V Article 3: Modeling Broadband And Circularly Polarized Patch Antennas Using EM.Picasso]]

* [[V&V Article 4: Designing Wideband Dielectric Resonator Antennas Using EM.Tempo]]

* [[V&V Article 5: Modeling Dispersive Materials Using EM.Tempo]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:ART FSS title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_1:_Modeling_Complex_Frequency_Selective_Surfaces_Using_EM.Cube]]
| style="width:50px;" | [[image:ART RCS title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_2:_Computing_Radar_Cross_Section_Of_Metallic_Targets_Using_EM.Cube]]
| style="width:50px;" | [[image:ART UWB title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_3:_Modeling_Broadband_And_Circularly_Polarized_Patch_Antennas_Using_EM.Picasso]]
| style="width:50px;" | [[image:ART DRA title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_4:_Designing_Wideband_Dielectric_Resonator_Antennas_Using_EM.Tempo]]
| style="width:50px;" | [[image:ART DISP title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=V%26V_Article_5:_Modeling_Dispersive_Materials_Using_EM.Tempo]]
|}

Application Notes

* [[Application Note 1: Modeling Radar Signature Of Real-Sized Aircraft Using EM.Tempo]]

* [[Application Note 2: Modeling Polarimetric Wave Propagation In The Lower Manhattan Scene Using EM.Terrano]]

* [[Application Note 3: Designing A Slot-Coupled Patch Antenna Array With A Corporate Feed Network Using EM.Picasso]]

* [[Application Note 4: Modeling Large Parabolic Reflectors Illuminated By Pyramidal Horn Antennas Using EM.Cube]]

* [[Application Note 5: Simulating The Performance Of Installed Antennas On Vehicular Platforms Using EM.Tempo]]

{| class="wikitable"
|-
| style="width:50px;" | [[image:ART AIR title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_1:_Modeling_Radar_Signature_Of_Real-Sized_Aircraft_Using_EM.Tempo]]
| style="width:50px;" | [[image:ART MANH Fig title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_2:_Modeling_Polarimetric_Wave_Propagation_In_The_Lower_Manhattan_Scene_Using_EM.Terrano]]
| style="width:50px;" | [[image:ART PATCH Fig title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_3:_Designing_A_Slot-Coupled_Patch_Antenna_Array_With_A_Corporate_Feed_Network_Using_EM.Picasso]]
| style="width:50px;" | [[image:ART PARAB Fig title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_4:_Modeling_Large_Parabolic_Reflectors_Illuminated_By_Pyramidal_Horn_Antennas_Using_EM.Cube]]
| style="width:50px;" | [[image:ART GOLF Fig title.png| 50px | link=http://www.emagtech.com/wiki/index.php?title=Application_Note_5:_Simulating_The_Performance_Of_Installed_Antennas_On_Vehicular_Platforms_Using_EM.Tempo]]
|}
 

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