Difference between revisions of "Importing RF Device Models"

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(Created page with "Multiport Network device, i.e. one-ports, two-ports, three-ports and four-ports, are all modeled based on their frequency-domain S-parameters. Most active and passive RF devi...")
 
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Multiport Network device, i.e. one-ports, two-ports, three-ports and four-ports, are all modeled based on their frequency-domain S-[[parameters]]. Most active and passive RF devices can be modeled as multipart networks. For example, RF diodes can be modeled as one-ports, while RF transistors (BJTs, JFETs, MOSFETs, and MESFETs) can be modeled as two-ports. many semiconductor manufacturers publish S-parameter data sheets for their RF devices. The data sets usually contain S-[[parameters]] in Mag/Phase format tabulated as a function of frequency expressed in GHz.
 
Multiport Network device, i.e. one-ports, two-ports, three-ports and four-ports, are all modeled based on their frequency-domain S-[[parameters]]. Most active and passive RF devices can be modeled as multipart networks. For example, RF diodes can be modeled as one-ports, while RF transistors (BJTs, JFETs, MOSFETs, and MESFETs) can be modeled as two-ports. many semiconductor manufacturers publish S-parameter data sheets for their RF devices. The data sets usually contain S-[[parameters]] in Mag/Phase format tabulated as a function of frequency expressed in GHz.
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Revision as of 02:52, 14 August 2014

Multiport Network device, i.e. one-ports, two-ports, three-ports and four-ports, are all modeled based on their frequency-domain S-parameters. Most active and passive RF devices can be modeled as multipart networks. For example, RF diodes can be modeled as one-ports, while RF transistors (BJTs, JFETs, MOSFETs, and MESFETs) can be modeled as two-ports. many semiconductor manufacturers publish S-parameter data sheets for their RF devices. The data sets usually contain S-parameters in Mag/Phase format tabulated as a function of frequency expressed in GHz.


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